Crystal growth control methods, apparatus, systems and storage media

Abstract

A crystal growth control method, apparatus, system, and storage medium are disclosed. The method includes: acquiring crystal growth data of a previous crystal sequence; determining a diameter deviation weight for each crystal based on a set diameter at a predetermined length position and the actual diameter within a predetermined time period, and performing a weighted sum based on the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain a first heating power; determining a pulling speed deviation weight for each crystal based on a set pulling speed at a predetermined length position and the actual pulling speed within a predetermined time period, and performing a weighted sum based on the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain a second heating power; and performing a weighted sum of the first heating power and the second heating power to obtain a target heating power for the next crystal at a predetermined length position, thereby controlling the growth process of the next crystal. This application reduces the incidence of intrinsic defects within the crystal and improves the crystal yield.

Description

Technical Field

[0001] This application relates to the field of crystal growth technology, and more specifically to a crystal growth control method, apparatus, system and storage medium. Background Technology

[0002] The Czochralski method, also known as the CZ method, involves melting high-purity polycrystalline silicon into a liquid state under a closed high-vacuum or rare gas (or inert gas) environment, followed by re-crystallization to form a single-crystal silicon material with a specific shape and size. The constant-diameter process during crystal growth is the most critical step. It requires controlling the crystal diameter within a constant range while simultaneously limiting the crystal pulling speed to prevent the formation of hole-dependent (COP) or dislocation-dependent (A-defect) defects within the crystal.

[0003] In related technologies, methods such as in-situ control and inter-batch control are employed to control crystal growth. In-situ control involves real-time monitoring and data acquisition based on the crystal diameter during growth, using closed-loop PID control to control diameter deviation and crystal pulling speed. Inter-batch control analyzes data from multiple crystal growth processes to progressively determine suitable piecewise curves for heater power at different crystal lengths (typically dividing the crystal length into 30-100 segments) as preset curves. In actual growth control, the heater power P is calculated by interpolation based on the actual crystal length X, serving as the target setpoint for heater power control.

[0004] However, the above method has at least the following drawbacks:

[0005] The pre-design of heater power or temperature profile serves as a feedforward condition for growth control. Deviations in the feedforward condition can easily cause fluctuations in diameter and pulling speed, leading to primary defects in the crystal.

[0006] Due to the aging of the heater in the thermal field, the parameters (feedforward conditions) of the heater power or temperature curve need to be constantly corrected.

[0007] The design of piecewise curves usually relies on human experience and exploration, which is difficult and has a high cost of trial and error.

[0008] In view of the above-mentioned technical problems, this application provides a new crystal growth control method, apparatus, system and storage medium to at least partially solve the above problems. Summary of the Invention

[0009] This application is made to address at least one of the aforementioned problems. According to one aspect of this application, a crystal growth control method is provided, comprising: acquiring crystal growth data of a previous crystal sequence; the previous crystal sequence comprising multiple crystals, the crystal growth data including the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each crystal at a predetermined length position; determining a diameter deviation weight for each crystal based on the set diameter at the predetermined length position and the actual diameter within the set time period, and performing a weighted sum based on the actual heating power and diameter deviation weight of each crystal at the predetermined length position to obtain a first heating power; determining a pulling speed deviation weight for each crystal based on the set pulling speed and the actual pulling speed within the set time period, and performing a weighted sum based on the actual heating power and pulling speed deviation weight of each crystal at the predetermined length position to obtain a second heating power; performing a weighted sum of the first heating power and the second heating power to obtain a target heating power for the next crystal at the predetermined length position, and controlling the growth process of the next crystal based on the target heating power.

[0010] In one embodiment of this application, determining the diameter deviation weight based on the set diameter of each crystal at the predetermined length position and the actual diameter within a predetermined time period includes: calculating the actual diameter of each crystal at the predetermined length position within the predetermined time period using a moving average method to obtain the average diameter within the predetermined time period; calculating the diameter deviation based on the set diameter of each crystal at the predetermined length position and the average diameter within the predetermined time period; calculating the diameter deviation rate based on the diameter deviation of each crystal at the predetermined length position and the set diameter; and determining the diameter deviation weight based on the diameter deviation rate of each crystal at the predetermined length position.

[0011] In one embodiment of this application, the diameter deviation weight of each crystal is exponentially related to its own diameter deviation rate.

[0012] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its diameter deviation weight; and summing all the calculated products to obtain the first heating power.

[0013] In one embodiment of this application, determining the pulling speed deviation weight based on the set pulling speed and the actual pulling speed within a set time period for each crystal at the predetermined length position includes: calculating the actual pulling speed of each crystal within the set time period at the predetermined length position using a moving average method to obtain the average pulling speed within the set time period; calculating the pulling speed deviation based on the set pulling speed and the average pulling speed within the set time period for each crystal at the predetermined length position; calculating the pulling speed deviation rate based on the pulling speed deviation and the set pulling speed for each crystal at the predetermined length position; and determining the pulling speed deviation weight based on the pulling speed deviation rate for each crystal at the predetermined length position.

[0014] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight; and summing all the calculated products to obtain the second heating power.

[0015] In one embodiment of this application, the pulling speed deviation weight of each crystal is exponentially related to its own pulling speed deviation rate.

[0016] In one embodiment of this application, the step of weighting and summing the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position includes: calculating a first weighted target heating power based on the first heating power and a diameter weighting factor; calculating a second weighted target heating power based on the second heating power and a pulling speed weighting factor; and summing the first weighted target heating power and the second weighted target heating power to obtain the target heating power.

[0017] In one embodiment of this application, when the constant diameter length of the next crystal is 0 to 300 mm, the diameter weighting factor is greater than 0 and less than 0.3, and the pulling speed weighting factor is greater than or equal to 0.3 and less than 1.0; when the constant diameter length of the next crystal is greater than 300 mm, the diameter weighting factor is greater than or equal to 0.3 and less than 1.0, and the pulling speed weighting factor is greater than 0 and less than 0.3.

[0018] In one embodiment of this application, the method further includes: obtaining the actual heating power and the target heating power in the next crystal growth process; calculating the deviation between the actual heating power and the target heating power in the next crystal growth process; and correcting the target heating power in the next crystal growth process based on the deviation using a proportional-integral-derivative control method.

[0019] According to another aspect of this application, a crystal growth control device is provided, comprising: a data acquisition module, configured to acquire crystal growth data of a previous crystal sequence; the previous crystal sequence comprising multiple crystals, the crystal growth data including the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each of the multiple crystals at a predetermined length position; and a first heating power calculation module, configured to determine the diameter deviation weight of each crystal based on the set diameter at the predetermined length position and the actual diameter within a set time period, and based on the actual heating power of each crystal at the predetermined length position and the actual diameter within a set time period. The diameter deviation weights are weighted and summed to obtain the first heating power; the second heating power calculation module is used to determine the pulling speed deviation weight of each crystal based on the set pulling speed and the actual pulling speed within the set time period at the predetermined length position, and to weight and sum the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power; the target heating power calculation module is used to weight and sum the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position, and to control the growth process of the next crystal based on the target heating power.

[0020] According to another aspect of this application, a crystal growth control device is provided, including a memory, a processor, and a computer program stored in the memory and running on the processor, wherein the processor executes the program to implement the crystal growth control method described in any one of the above.

[0021] According to another aspect of this application, a crystal growth control device is provided, comprising: a sensor for acquiring crystal growth data of a previous crystal sequence; the previous crystal sequence comprising multiple crystals, the crystal growth data comprising the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each crystal at a predetermined length position; and a processor for: determining a diameter deviation weight for each crystal based on the set diameter at the predetermined length position and the actual diameter within the set time period, and performing a weighted summation based on the actual heating power and diameter deviation weight of each crystal at the predetermined length position to obtain a first heating power; determining a pulling speed deviation weight for each crystal based on the set pulling speed and the actual pulling speed within the set time period, and performing a weighted summation based on the actual heating power and pulling speed deviation weight of each crystal at the predetermined length position to obtain a second heating power; performing a weighted summation of the first heating power and the second heating power to obtain a target heating power for the next crystal at the predetermined length position, and controlling the growth process of the next crystal based on the target heating power.

[0022] According to another aspect of this application, a crystal growth system is provided, including a crystal growth furnace and the crystal growth control device described in any one of the above-mentioned methods.

[0023] According to another aspect of this application, a computer-readable storage medium is provided, on which a computer program is stored, which, when executed by a processor, implements the crystal growth control method described in any one of the preceding claims.

[0024] According to the crystal growth control method, apparatus, system, and storage medium of this application embodiment, the corresponding power is calculated by weighting the diameter deviation weight and the pulling speed deviation weight respectively, and then the obtained power is weighted to obtain the target heating power for controlling the next crystal growth process. This enables the crystal pulling control to gradually have the ability to self-iterate and adapt, adapt to the aging of the hot field heater, reduce the dependence on human experience, make the actual diameter and pulling speed of the crystal closer to the target set value, control the defects in the crystal, reduce the occurrence rate of primary defects in the crystal, and improve the yield of the crystal. Attached Figure Description

[0025] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.

[0026] Figure 1 A schematic block diagram of an example electronic device for implementing the crystal growth control method and apparatus according to embodiments of the present invention is shown.

[0027] Figure 2 A schematic flowchart of a crystal growth control method according to an embodiment of this application is shown.

[0028] Figure 3 A graph showing the relationship between diameter deviation rate and diameter deviation weight according to an embodiment of this application is provided.

[0029] Figure 4 A graph showing the relationship between the pulling speed deviation rate and the pulling speed deviation weight according to an embodiment of this application is provided.

[0030] Figure 5 A schematic block diagram of a crystal growth control device according to an embodiment of this application is shown.

[0031] Figure 6 A schematic block diagram of another crystal growth control device according to an embodiment of this application is shown.

[0032] Figure 7A schematic block diagram of another crystal growth control device according to an embodiment of this application is shown.

[0033] Figure 8 A schematic diagram of a crystal growth system according to an embodiment of this application is shown. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of this application more apparent, exemplary embodiments according to this application will be described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are merely a part of the embodiments of this application, and not all of the embodiments of this application. It should be understood that this application is not limited to the exemplary embodiments described herein. Based on the embodiments of this application described herein, all other embodiments obtained by those skilled in the art without inventive effort should fall within the protection scope of this application.

[0035] First, refer to Figure 1 This describes an example electronic device 100 for implementing the crystal growth control method and apparatus of embodiments of the present invention.

[0036] like Figure 1 As shown, the electronic device 100 includes one or more processors 102, one or more storage devices 104, input devices 106, and output devices 108, which are interconnected via a bus system 110 and / or other forms of connection mechanisms (not shown). It should be noted that... Figure 1 The components and structure of the electronic device 100 shown are merely exemplary and not limiting; the electronic device may also have other components and structures as needed.

[0037] The processor 102 may be a central processing unit (CPU) or other form of processing unit with data processing capabilities and / or instruction execution capabilities, and may control other components in the electronic device 100 to perform desired functions.

[0038] The storage device 104 may include one or more computer program products, which may include various forms of computer-readable storage media, such as volatile memory and / or non-volatile memory. The volatile memory may include, for example, random access memory (RAM) and / or cache memory. The non-volatile memory may include, for example, read-only memory (ROM), hard disk, flash memory, etc. One or more computer program instructions may be stored on the computer-readable storage medium, and the processor 102 may execute the program instructions to implement the client functions (implemented by the processor) in the embodiments of the present invention described below, and / or other desired functions. Various applications and various data, such as various data used and / or generated by the applications, may also be stored in the computer-readable storage medium.

[0039] The input device 106 can be a device used by a user to input commands, and may include one or more of a keyboard, mouse, microphone, and touchscreen. Furthermore, the input device 106 can also be any interface for receiving information.

[0040] The output device 108 can output various information (e.g., images or sounds) to the outside (e.g., a user), and may include one or more of a display, speaker, etc. Furthermore, the output device 108 can also be any other device with output functionality.

[0041] For example, an example electronic device for implementing the crystal growth control method and apparatus according to embodiments of the present invention can be implemented such as a mobile phone, computer, controller, etc.

[0042] Below, we will refer to Figures 2 to 4 A crystal growth control method 200 according to an embodiment of this application is described. Wherein, Figure 2 A schematic flowchart illustrating a crystal growth control method according to an embodiment of this application is shown; Figure 3 This diagram illustrates the relationship between diameter deviation rate and diameter deviation weight according to an embodiment of this application. Figure 4 A graph showing the relationship between the pulling speed deviation rate and the pulling speed deviation weight according to an embodiment of this application is provided. Figure 2 As shown, the crystal growth control method 200 may include the following steps:

[0043] S210, acquire crystal growth data of the previous crystal sequence; the previous crystal sequence includes multiple crystals, and the crystal growth data includes the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each of the multiple crystals at a predetermined length position.

[0044] S220, determine the diameter deviation weight of each crystal based on the set diameter at the predetermined length position and the actual diameter within the predetermined time period, and perform a weighted summation based on the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power;

[0045] S230, determine the pulling speed deviation weight of each crystal based on the set pulling speed at the predetermined length position and the actual pulling speed within the set time period, and perform a weighted sum based on the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power;

[0046] S240, the first heating power and the second heating power are weighted and summed to obtain the target heating power of the next crystal at the predetermined length position, and the growth process of the next crystal is controlled according to the target heating power.

[0047] It should be understood that there is no strict order between steps S220 and S230. Step S220 can be executed first and step S230 can be executed later, or step S230 can be executed first and step S220 can be executed later, or both can be executed simultaneously.

[0048] In the embodiments of this application, the crystal growth control method 200 provides a method for controlling the heating power in the next crystal growth process. Specifically, the crystal growth control method 200 calculates the corresponding power by weighting the diameter deviation weight and the pulling speed deviation weight respectively, and then calculates the weighted power to obtain the target heating power for controlling the next crystal growth process. This enables the crystal pulling control to gradually have the ability to self-iterate and adapt, adapting to the aging of the hot zone heater while reducing the dependence on human experience. The actual diameter and pulling speed of the crystal are closer to the target set value, defects in the crystal are controlled, the incidence of primary defects in the crystal is reduced, and the yield of the crystal is improved.

[0049] It should be noted that the aforementioned "previous crystal sequence" refers to a sequence of multiple crystals that have grown prior to the next crystal, following the crystal growth order. From the perspective of crystal growth order, there may or may not be other grown crystals between the previous and next crystals; this is not limited. Similarly, within the previous crystal sequence, there may or may not be other grown crystals between two adjacent crystals; this is also not limited.

[0050] For example, 10 crystals have been grown before the next crystal. Crystals that do not meet the requirements can be removed, and the remaining crystals that meet the requirements constitute the previous crystal sequence of the next crystal.

[0051] In one example, the crystals in the preceding crystal sequence meet the following requirements: the deviation between the full diameter and the target diameter of each crystal in the preceding crystal sequence is -2.0 mm to 2.0 mm, and the equal diameter length and the end of each crystal meet the set conditions.

[0052] The constant diameter length and the end of the crystal can meet the following conditions: the crystal has a complete constant diameter length and end, or the constant diameter length and the end of the crystal are within the allowable error range.

[0053] In one example, the number of crystals in the preceding crystal sequence is 2 to 10.

[0054] Furthermore, the crystals should be arranged in the order of their growth, with the number of crystals in the previous crystal sequence preferably being 5-10.

[0055] It should also be understood that for each crystal in the previous crystal sequence, there may be one predetermined length position or multiple predetermined length positions, without limitation.

[0056] Furthermore, it should be understood that growth data such as the actual diameter, length, and pulling speed of the crystal can be obtained using appropriate sensors. For example, a CCD diameter measuring device can be installed above the furnace lid of the crystal growth furnace to collect the actual diameter of the crystal, and sensors can be installed inside the pulling mechanism of the crystal growth furnace to collect data such as the length and actual pulling speed of the crystal.

[0057] In one embodiment of this application, determining the diameter deviation weight based on the set diameter of each crystal at the predetermined length position and the actual diameter within a predetermined time period includes: calculating the actual diameter of each crystal at the predetermined length position within the predetermined time period using a moving average method to obtain the average diameter within the predetermined time period; calculating the diameter deviation based on the set diameter of each crystal at the predetermined length position and the average diameter within the predetermined time period; calculating the diameter deviation rate based on the diameter deviation of each crystal at the predetermined length position and the set diameter; and determining the diameter deviation weight based on the diameter deviation rate of each crystal at the predetermined length position.

[0058] Specifically, during crystal growth, a CCD diameter measuring device installed on the furnace can measure the real-time crystal diameter using image recognition processing. Based on diameter changes, the crystal pulling speed is adjusted in real-time. Since the transient diameter and pulling speed fluctuate, a moving average over a set time period can smooth these fluctuations. This set time period can be between 1 minute and 120 minutes, with 10 to 60 minutes being optimal. The diameter deviation obtained using a moving average better reflects the continuous crystal pulling process.

[0059] Specifically, the diameter deviation rate can be calculated using the following formula:

[0060]

[0061]

[0062] in, This represents the average diameter of the crystal with sequence number i and length position L over a set time period. This represents the set diameter for the crystal with sequence number i and length position L. This represents the diameter deviation of the crystal with sequence number i at length position L. This represents the diameter deviation rate of the crystal with sequence number i and length position L.

[0063] The diameter deviation weight is related to the diameter deviation rate; the larger the diameter deviation rate, the smaller the diameter deviation weight. For example, Figure 3 The graph shows the relationship between diameter deviation rate and diameter deviation weight. In the graph, the diameter deviation weight decreases as the diameter deviation rate increases.

[0064] In one example, the diameter deviation weight of each crystal is exponentially related to its own diameter deviation rate.

[0065] In one example, the sum of the diameter deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0066] Specifically, it can be expressed as the following formula:

[0067]

[0068] Where n represents the sequence number, The diameter deviation weight represents the crystal with sequence number i and length position L.

[0069] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its diameter deviation weight; and summing all the calculated products to obtain the first heating power.

[0070] Specifically, the first heating power can be calculated using the following formula:

[0071]

[0072] Among them, P1 L The first heating power represents the length position L. The diameter deviation weight represents the length position L of the crystal with sequence number i. This represents the actual heating power of the crystal with sequence number i and length position L.

[0073] It should be noted that at the beginning of the constant diameter process of crystal growth, the heat transfer of crystal growth is in an unsteady state, and the diameter fluctuates relatively greatly. When the length of the crystal reaches a certain point, especially when the shoulder of the crystal is higher than the inner cylinder of the guide tube, the crystal diameter tends to stabilize, and the pulling speed also stabilizes. This is the main control target for controlling the original defects of the crystal throughout the subsequent constant diameter process.

[0074] In one embodiment of this application, determining the pulling speed deviation weight based on the set pulling speed and the actual pulling speed within a set time period for each crystal at the predetermined length position includes: calculating the actual pulling speed of each crystal within the set time period at the predetermined length position using a moving average method to obtain the average pulling speed within the set time period; calculating the pulling speed deviation based on the set pulling speed and the average pulling speed within the set time period for each crystal at the predetermined length position; calculating the pulling speed deviation rate based on the pulling speed deviation and the set pulling speed for each crystal at the predetermined length position; and determining the pulling speed deviation weight based on the pulling speed deviation rate for each crystal at the predetermined length position.

[0075] Specifically, during crystal growth, a CCD diameter measuring device installed on the furnace can measure the real-time crystal diameter using image recognition processing. Based on changes in diameter, the crystal pulling speed is adjusted in real-time. Since the transient diameter and pulling speed fluctuate, a moving average over a set time period can smooth these fluctuations. This set time period can be between 1 minute and 120 minutes, with 10 to 60 minutes being optimal. Using a moving average to adjust the pulling speed deviation better reflects the continuous crystal pulling process.

[0076] Specifically, the following formula can be used to calculate the pulling speed deviation rate:

[0077]

[0078]

[0079] in, This represents the average pulling speed of the crystal with sequence number i and length position L within a set time period. This represents the set pulling speed for the crystal with sequence number i and length position L. This represents the pulling speed deviation of the crystal with sequence number i at length position L. This represents the pulling speed deviation rate of the crystal with sequence number i and length position L.

[0080] The weight of the pulling speed deviation is related to the pulling speed deviation rate; the larger the pulling speed deviation rate, the smaller the weight of the pulling speed deviation. For example, Figure 4 The graph shows the relationship between the pulling speed deviation rate and the pulling speed deviation weight. In the graph, the pulling speed deviation weight decreases as the pulling speed deviation rate increases.

[0081] In one example, the pulling speed deviation weight of each crystal is exponentially related to its own pulling speed deviation rate.

[0082] In one example, the sum of the pulling speed deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0083] Specifically, it can be expressed as the following formula:

[0084]

[0085] Where n represents the sequence number, The pulling speed deviation weight represents the crystal with sequence number i and length position L.

[0086] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight; and summing all the calculated products to obtain the second heating power.

[0087] In the growth of silicon semiconductor crystals, the crystal pulling speed is crucial to the type and distribution of defects within the crystal and silicon wafer. In defect-free crystal growth, the crystal pulling speed typically needs to be controlled within a very small range. Therefore, controlling the pulling speed deviation has become one of the important methods for controlling crystal yield.

[0088] Specifically, the second heating power can be calculated using the following formula:

[0089]

[0090] Among them, P2 L This represents the second heating power at a length position of L. The pulling speed deviation weight represents the crystal with sequence number i and length position L. This represents the actual heating power of the crystal with sequence number i and length position L.

[0091] In one embodiment of this application, the step of weighting and summing the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position includes: calculating a first weighted target heating power based on the first heating power and a diameter weighting factor; calculating a second weighted target heating power based on the second heating power and a pulling speed weighting factor; and summing the first weighted target heating power and the second weighted target heating power to obtain the target heating power.

[0092] After obtaining the target heating power, the target heating power can be assigned to the heater in the crystal growth furnace so that the heater controls the heating power when the next crystal grows to a length position of L as the target heating power, thereby smoothly controlling the fluctuation of the crystal diameter, reducing the original defects of the crystal, and improving the yield of silicon wafer products.

[0093] It is understandable that when there are multiple predetermined length positions, the target heating power for multiple length positions can be obtained, so that the heater can control the heating power when the next crystal grows to multiple length positions to the corresponding target heating power.

[0094] Specifically, you can refer to the following formula to calculate the target heating power:

[0095]

[0096] in, P1 represents the target heating power at a length position of L. L P2 represents the first heating power at a length position of L. L The second heating power is represented when the length position is L, (1-β) represents the sequence weighting factor, and β represents the pulling speed weighting factor.

[0097] In one example, when the constant diameter length of the next crystal is 0 to 300 mm, the diameter weighting factor is greater than 0 and less than 0.3, and the pulling speed weighting factor is greater than or equal to 0.3 and less than 1.0; when the constant diameter length of the next crystal is greater than 300 mm, the diameter weighting factor is greater than or equal to 0.3 and less than 1.0, and the pulling speed weighting factor is greater than 0 and less than 0.3.

[0098] For example, when the diameter length of the next crystal is 200 mm, the diameter weighting factor can be 0.2, the pulling speed weighting factor can be 0.8, and the sum of the diameter weighting factor and the pulling speed weighting factor is 1.0.

[0099] In one embodiment of this application, the method further includes: obtaining the actual heating power and the target heating power in the next crystal growth process; calculating the deviation between the actual heating power and the target heating power in the next crystal growth process; and correcting the target heating power in the next crystal growth process based on the deviation using a proportional-integral-derivative control method. Specifically, the target heating power of the heater can be calculated and updated using the actual heating power of the heater that has been fed back in real time, further reducing the deviation of the pulling speed in the real-time crystal pulling process, smoothly controlling the fluctuation of the crystal diameter, reducing crystal native defects, and improving the yield of silicon wafer products.

[0100] Based on the above description, the crystal growth control method according to the embodiments of this application calculates the corresponding power by weighting the diameter deviation weight and the pulling speed deviation weight respectively, and then calculates the target heating power for controlling the next crystal growth process by weighting the obtained power. This enables the crystal pulling control to gradually have the ability to self-iterate and adapt, adapt to the aging of the hot field heater, reduce the dependence on human experience, make the actual diameter and pulling speed of the crystal closer to the target set value, control the defects in the crystal, reduce the occurrence rate of primary defects in the crystal, and improve the yield of the crystal.

[0101] Furthermore, it is understood that the crystal growth control method of this application is not only applicable to the Czochralski single crystal method, but also applicable to other crystal growth methods such as the crucible lowering method and the zone melting method, without limitation. Correspondingly, the crystal growth control device, system, storage medium, and computer program described below are not only applicable to the Czochralski single crystal method, but also applicable to other crystal growth methods, without limitation.

[0102] The crystal growth control method according to embodiments of this application has been described above by way of example. The following, in conjunction with... Figure 5 This application describes a crystal growth control device provided in another aspect. Figure 5 A schematic block diagram of a crystal growth control apparatus 500 according to an embodiment of this application is shown. Figure 5As shown, the crystal growth control device 500 according to an embodiment of this application may include a data acquisition module 510, a first heating power calculation module 520, a second heating power calculation module 530, and a target heating power calculation module 540. The data acquisition module 510 is used to acquire crystal growth data of the previous crystal sequence. The previous crystal sequence includes multiple crystals, and the crystal growth data includes the sequence number of each crystal and the set pulling speed, actual pulling speed, and actual heating power of each crystal at a predetermined length position. The first heating power calculation module 520 is used to determine the sequence weight of each crystal based on its sequence number, and to perform a weighted sum based on the actual heating power of each crystal at the predetermined length position and its sequence weight to obtain a first heating power. The second heating power calculation module 530 is used to determine the pulling speed deviation weight of each crystal based on its set pulling speed and actual pulling speed at the predetermined length position, and to perform a weighted sum based on the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain a second heating power. The target heating power calculation module 540 is used to perform a weighted sum of the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position, and to control the growth process of the next crystal based on the target heating power.

[0103] The data acquisition module 510, the first heating power calculation module 520, the second heating power calculation module 530, and the target heating power calculation module 540 can be derived from... Figure 1 The processor 102 in the illustrated electronic device 100 executes program instructions stored in the memory 104 to implement and perform corresponding steps in the crystal growth control method according to an embodiment of the present invention. The main functions of each module of the crystal growth control device 500 are described below, omitting the details already described above.

[0104] In one embodiment of this application, determining the diameter deviation weight based on the set diameter of each crystal at the predetermined length position and the actual diameter within a predetermined time period includes: calculating the actual diameter of each crystal at the predetermined length position within the predetermined time period using a moving average method to obtain the average diameter within the predetermined time period; calculating the diameter deviation based on the set diameter of each crystal at the predetermined length position and the average diameter within the predetermined time period; calculating the diameter deviation rate based on the diameter deviation of each crystal at the predetermined length position and the set diameter; and determining the diameter deviation weight based on the diameter deviation rate of each crystal at the predetermined length position.

[0105] In one embodiment of this application, the diameter deviation weight of each crystal is exponentially related to its own diameter deviation rate.

[0106] In one embodiment of this application, the sum of the diameter deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0107] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its diameter deviation weight; and summing all the calculated products to obtain the first heating power.

[0108] In one embodiment of this application, determining the pulling speed deviation weight based on the set pulling speed and the actual pulling speed within a set time period for each crystal at the predetermined length position includes: calculating the actual pulling speed of each crystal within the set time period at the predetermined length position using a moving average method to obtain the average pulling speed within the set time period; calculating the pulling speed deviation based on the set pulling speed and the average pulling speed within the set time period for each crystal at the predetermined length position; calculating the pulling speed deviation rate based on the pulling speed deviation and the set pulling speed for each crystal at the predetermined length position; and determining the pulling speed deviation weight based on the pulling speed deviation rate for each crystal at the predetermined length position.

[0109] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight; and summing all the calculated products to obtain the second heating power.

[0110] In one embodiment of this application, the pulling speed deviation weight of each crystal is exponentially related to its own pulling speed deviation rate.

[0111] In one embodiment of this application, the sum of the pulling speed deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0112] In one embodiment of this application, the step of weighting and summing the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position includes: calculating a first weighted target heating power based on the first heating power and a diameter weighting factor; calculating a second weighted target heating power based on the second heating power and a pulling speed weighting factor; and summing the first weighted target heating power and the second weighted target heating power to obtain the target heating power.

[0113] In one embodiment of this application, when the constant diameter length of the next crystal is 0 to 300 mm, the diameter weighting factor is greater than 0 and less than 0.3, and the pulling speed weighting factor is greater than or equal to 0.3 and less than 1.0; when the constant diameter length of the next crystal is greater than 300 mm, the diameter weighting factor is greater than or equal to 0.3 and less than 1.0, and the pulling speed weighting factor is greater than 0 and less than 0.3.

[0114] In one embodiment of this application, the deviation between the full diameter and the target diameter of each crystal in the preceding crystal sequence is -2.0 mm to 2.0 mm, and the equal diameter length and the end of each crystal meet the set conditions.

[0115] In one embodiment of this application, the number of crystals in the preceding crystal sequence is 2 to 10.

[0116] In one embodiment of this application, the crystal growth control device 500 may further perform the following steps: obtaining the actual heating power and the target heating power in the next crystal growth process; calculating the deviation between the actual heating power and the target heating power in the next crystal growth process; and correcting the target heating power in the next crystal growth process based on the deviation using a proportional-integral-derivative control method.

[0117] According to another aspect of this application, another crystal growth control device is also provided. Figure 6 A schematic block diagram of another crystal growth control device 600 according to an embodiment of this application is shown. Figure 6 As shown, the crystal growth control device 600 according to an embodiment of this application may include a sensor 610 and a processor 630. The sensor 610 is used to collect crystal growth data of the previous crystal sequence. The previous crystal sequence includes multiple crystals, and the crystal growth data includes the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each crystal at a predetermined length position. The processor 630 is used to: determine the diameter deviation weight of each crystal based on the set diameter at the predetermined length position and the actual diameter within the set time period, and perform a weighted sum based on the actual heating power and diameter deviation weight of each crystal at the predetermined length position to obtain a first heating power; determine the pulling speed deviation weight of each crystal based on the set pulling speed and the actual pulling speed within the set time period, and perform a weighted sum based on the actual heating power and pulling speed deviation weight of each crystal at the predetermined length position to obtain a second heating power; perform a weighted sum of the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position, and control the growth process of the next crystal based on the target heating power.

[0118] The crystal growth control device 600 may further include a memory 620. The crystal growth data collected by the sensor 610 can be stored in the memory 620 in the form of a database. The processor 630 is communicatively connected to the database, retrieves the corresponding crystal growth data from the database, and executes the corresponding steps in the crystal growth control method according to the embodiments of the present invention. The following only describes the main functions of the crystal growth control device 600, omitting the details already described above.

[0119] In one embodiment of this application, determining the diameter deviation weight based on the set diameter of each crystal at the predetermined length position and the actual diameter within a predetermined time period includes: calculating the actual diameter of each crystal at the predetermined length position within the predetermined time period using a moving average method to obtain the average diameter within the predetermined time period; calculating the diameter deviation based on the set diameter of each crystal at the predetermined length position and the average diameter within the predetermined time period; calculating the diameter deviation rate based on the diameter deviation of each crystal at the predetermined length position and the set diameter; and determining the diameter deviation weight based on the diameter deviation rate of each crystal at the predetermined length position.

[0120] In one embodiment of this application, the diameter deviation weight of each crystal is exponentially related to its own diameter deviation rate.

[0121] In one embodiment of this application, the sum of the diameter deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0122] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its diameter deviation weight; and summing all the calculated products to obtain the first heating power.

[0123] In one embodiment of this application, determining the pulling speed deviation weight based on the set pulling speed and the actual pulling speed within a set time period for each crystal at the predetermined length position includes: calculating the actual pulling speed of each crystal within the set time period at the predetermined length position using a moving average method to obtain the average pulling speed within the set time period; calculating the pulling speed deviation based on the set pulling speed and the average pulling speed within the set time period for each crystal at the predetermined length position; calculating the pulling speed deviation rate based on the pulling speed deviation and the set pulling speed for each crystal at the predetermined length position; and determining the pulling speed deviation weight based on the pulling speed deviation rate for each crystal at the predetermined length position.

[0124] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight; and summing all the calculated products to obtain the second heating power.

[0125] In one embodiment of this application, the pulling speed deviation weight of each crystal is exponentially related to its own pulling speed deviation rate.

[0126] In one embodiment of this application, the sum of the pulling speed deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0127] In one embodiment of this application, the step of weighting and summing the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position includes: calculating a first weighted target heating power based on the first heating power and a diameter weighting factor; calculating a second weighted target heating power based on the second heating power and a pulling speed weighting factor; and summing the first weighted target heating power and the second weighted target heating power to obtain the target heating power.

[0128] In one embodiment of this application, when the constant diameter length of the next crystal is 0 to 300 mm, the diameter weighting factor is greater than 0 and less than 0.3, and the pulling speed weighting factor is greater than or equal to 0.3 and less than 1.0; when the constant diameter length of the next crystal is greater than 300 mm, the diameter weighting factor is greater than or equal to 0.3 and less than 1.0, and the pulling speed weighting factor is greater than 0 and less than 0.3.

[0129] In one embodiment of this application, the deviation between the full diameter and the target diameter of each crystal in the preceding crystal sequence is -2.0 mm to 2.0 mm, and the equal diameter length and the end of each crystal meet the set conditions.

[0130] In one embodiment of this application, the number of crystals in the preceding crystal sequence is 2 to 10.

[0131] In one embodiment of this application, when the processor 630 is running, the crystal growth control device 600 may also perform the following steps: obtaining the actual heating power and the target heating power in the next crystal growth process; calculating the deviation between the actual heating power and the target heating power in the next crystal growth process; and correcting the target heating power in the next crystal growth process based on the deviation using a proportional-integral-derivative control method.

[0132] According to another aspect of this application, another crystal growth control device is also provided. Figure 7 A schematic block diagram of another crystal growth control device 700 according to an embodiment of this application is shown. Figure 7 As shown, the crystal growth control device 700 according to an embodiment of this application may include a memory 710 and a processor 720. The memory 710 stores a computer program executed by the processor 720. When the computer program is executed by the processor 720, it causes the processor 720 to perform the crystal growth control method described above according to an embodiment of this application. Those skilled in the art can understand the specific operation of the crystal growth control device according to the embodiment of this application in conjunction with the foregoing description. For the sake of brevity, specific details will not be repeated here, only some main operations of the processor 720 will be described.

[0133] In one embodiment of this application, when the computer program is run by the processor 720, the processor 720 performs the following steps: acquiring crystal growth data of a previous crystal sequence; the previous crystal sequence includes multiple crystals, and the crystal growth data includes the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each crystal at a predetermined length position; determining a diameter deviation weight based on the set diameter and actual diameter within a set time period for each crystal at the predetermined length position, and performing a weighted sum based on the actual heating power and diameter deviation weight of each crystal at the predetermined length position to obtain a first heating power; determining a pulling speed deviation weight based on the set pulling speed and actual pulling speed within a set time period for each crystal at the predetermined length position, and performing a weighted sum based on the actual heating power and pulling speed deviation weight of each crystal at the predetermined length position to obtain a second heating power; performing a weighted sum of the first heating power and the second heating power to obtain a target heating power for the next crystal at the predetermined length position, and controlling the growth process of the next crystal based on the target heating power.

[0134] In one embodiment of this application, determining the diameter deviation weight based on the set diameter of each crystal at the predetermined length position and the actual diameter within a predetermined time period includes: calculating the actual diameter of each crystal at the predetermined length position within the predetermined time period using a moving average method to obtain the average diameter within the predetermined time period; calculating the diameter deviation based on the set diameter of each crystal at the predetermined length position and the average diameter within the predetermined time period; calculating the diameter deviation rate based on the diameter deviation of each crystal at the predetermined length position and the set diameter; and determining the diameter deviation weight based on the diameter deviation rate of each crystal at the predetermined length position.

[0135] In one embodiment of this application, the diameter deviation weight of each crystal is exponentially related to its own diameter deviation rate.

[0136] In one embodiment of this application, the sum of the diameter deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0137] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its diameter deviation weight; and summing all the calculated products to obtain the first heating power.

[0138] In one embodiment of this application, determining the pulling speed deviation weight based on the set pulling speed and the actual pulling speed within a set time period for each crystal at the predetermined length position includes: calculating the actual pulling speed of each crystal within the set time period at the predetermined length position using a moving average method to obtain the average pulling speed within the set time period; calculating the pulling speed deviation based on the set pulling speed and the average pulling speed within the set time period for each crystal at the predetermined length position; calculating the pulling speed deviation rate based on the pulling speed deviation and the set pulling speed for each crystal at the predetermined length position; and determining the pulling speed deviation weight based on the pulling speed deviation rate for each crystal at the predetermined length position.

[0139] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight; and summing all the calculated products to obtain the second heating power.

[0140] In one embodiment of this application, the pulling speed deviation weight of each crystal is exponentially related to its own pulling speed deviation rate.

[0141] In one embodiment of this application, the sum of the pulling speed deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0142] In one embodiment of this application, the step of weighting and summing the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position includes: calculating a first weighted target heating power based on the first heating power and a diameter weighting factor; calculating a second weighted target heating power based on the second heating power and a pulling speed weighting factor; and summing the first weighted target heating power and the second weighted target heating power to obtain the target heating power.

[0143] In one embodiment of this application, when the constant diameter length of the next crystal is 0 to 300 mm, the diameter weighting factor is greater than 0 and less than 0.3, and the pulling speed weighting factor is greater than or equal to 0.3 and less than 1.0; when the constant diameter length of the next crystal is greater than 300 mm, the diameter weighting factor is greater than or equal to 0.3 and less than 1.0, and the pulling speed weighting factor is greater than 0 and less than 0.3.

[0144] In one embodiment of this application, the deviation between the full diameter and the target diameter of each crystal in the preceding crystal sequence is -2.0 mm to 2.0 mm, and the equal diameter length and the end of each crystal meet the set conditions.

[0145] In one embodiment of this application, the number of crystals in the preceding crystal sequence is 2 to 10.

[0146] In one embodiment of this application, when the computer program is run by the processor 720, the processor 720 may also perform the following steps: obtain the actual heating power and the target heating power in the next crystal growth process; calculate the deviation between the actual heating power and the target heating power in the next crystal growth process; and correct the target heating power in the next crystal growth process based on the deviation using a proportional-integral-derivative control method.

[0147] Based on the above description, the crystal growth control device according to the embodiments of this application calculates the corresponding power by weighting the diameter deviation weight and the pulling speed deviation weight respectively, and then calculates the target heating power for controlling the next crystal growth process by weighting the obtained power. This enables the crystal pulling control to gradually have the ability to self-iterate and adapt, adapt to the aging of the hot field heater, reduce the dependence on human experience, make the actual diameter and pulling speed of the crystal closer to the target set value, control the defects in the crystal, reduce the occurrence rate of primary defects in the crystal, and improve the yield of the crystal.

[0148] Furthermore, according to embodiments of this application, a storage medium is also provided, on which a computer program is stored. When the computer program is run by a computer or processor, it is used to execute corresponding steps of the crystal growth control method of the embodiments of this application. The storage medium may, for example, include a memory card of a smartphone, a storage component of a tablet computer, a hard disk of a personal computer, a read-only memory (ROM), an erasable programmable read-only memory (EPROM), a portable compact disc read-only memory (CD-ROM), a USB memory, or any combination of the above storage media. The computer-readable storage medium may be any combination of one or more computer-readable storage media.

[0149] In one embodiment of this application, the computer program, when run by a computer or processor, can implement the various functional modules of the crystal growth control device according to the embodiments of the present invention, and / or can execute the crystal growth control method according to the embodiments of the present invention.

[0150] In one embodiment of this application, determining the diameter deviation weight based on the set diameter of each crystal at the predetermined length position and the actual diameter within a predetermined time period includes: calculating the actual diameter of each crystal at the predetermined length position within the predetermined time period using a moving average method to obtain the average diameter within the predetermined time period; calculating the diameter deviation based on the set diameter of each crystal at the predetermined length position and the average diameter within the predetermined time period; calculating the diameter deviation rate based on the diameter deviation of each crystal at the predetermined length position and the set diameter; and determining the diameter deviation weight based on the diameter deviation rate of each crystal at the predetermined length position.

[0151] In one embodiment of this application, the diameter deviation weight of each crystal is exponentially related to its own diameter deviation rate.

[0152] In one embodiment of this application, the sum of the diameter deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0153] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its diameter deviation weight; and summing all the calculated products to obtain the first heating power.

[0154] In one embodiment of this application, determining the pulling speed deviation weight based on the set pulling speed and the actual pulling speed within a set time period for each crystal at the predetermined length position includes: calculating the actual pulling speed of each crystal within the set time period at the predetermined length position using a moving average method to obtain the average pulling speed within the set time period; calculating the pulling speed deviation based on the set pulling speed and the average pulling speed within the set time period for each crystal at the predetermined length position; calculating the pulling speed deviation rate based on the pulling speed deviation and the set pulling speed for each crystal at the predetermined length position; and determining the pulling speed deviation weight based on the pulling speed deviation rate for each crystal at the predetermined length position.

[0155] In one embodiment of this application, the step of weighting and summing the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power includes: calculating the product of the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight; and summing all the calculated products to obtain the second heating power.

[0156] In one embodiment of this application, the pulling speed deviation weight of each crystal is exponentially related to its own pulling speed deviation rate.

[0157] In one embodiment of this application, the sum of the pulling speed deviation weights of all crystals in the preceding crystal sequence is 1.0.

[0158] In one embodiment of this application, the step of weighting and summing the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position includes: calculating a first weighted target heating power based on the first heating power and a diameter weighting factor; calculating a second weighted target heating power based on the second heating power and a pulling speed weighting factor; and summing the first weighted target heating power and the second weighted target heating power to obtain the target heating power.

[0159] In one embodiment of this application, when the constant diameter length of the next crystal is 0 to 300 mm, the diameter weighting factor is greater than 0 and less than 0.3, and the pulling speed weighting factor is greater than or equal to 0.3 and less than 1.0; when the constant diameter length of the next crystal is greater than 300 mm, the diameter weighting factor is greater than or equal to 0.3 and less than 1.0, and the pulling speed weighting factor is greater than 0 and less than 0.3.

[0160] In one embodiment of this application, the deviation between the full diameter and the target diameter of each crystal in the preceding crystal sequence is -2.0 mm to 2.0 mm, and the equal diameter length and the end of each crystal meet the set conditions.

[0161] In one embodiment of this application, the number of crystals in the preceding crystal sequence is 2 to 10.

[0162] In one embodiment of this application, when the computer program is run by a computer or processor, the computer or processor may also perform the following steps: obtaining the actual heating power and the target heating power in the next crystal growth process; calculating the deviation between the actual heating power and the target heating power in the next crystal growth process; and correcting the target heating power in the next crystal growth process based on the deviation using a proportional-integral-derivative control method.

[0163] Furthermore, a computer program is provided, which can be stored on a cloud or local storage medium. When this computer program is run by a computer or processor, it is used to execute the corresponding steps of the crystal growth control method according to embodiments of the present invention, and to implement corresponding modules in the crystal growth control apparatus according to embodiments of the present invention.

[0164] In addition, a crystal growth system is provided, including a crystal growth furnace and a crystal growth control device.

[0165] Taking the Czochralski single crystal method as an example, the crystal growth furnace may include a furnace body, a heater, a crystal pulling mechanism, a crystal rotating mechanism, a gas control mechanism, and sensors. For other crystal growth methods, crystal growth furnaces with other corresponding structures can be adopted, and there is no limitation on this.

[0166] The crystal growth control device can be implemented as the crystal growth control device 500, 600, or 700 mentioned above, as described above, and will not be repeated here.

[0167] The crystal growth furnace and crystal growth control device work together to achieve the following crystal growth process: loading polycrystalline material, vacuuming, atmosphere formation, heating and material preparation, crystal pulling, necking, shoulder formation, shoulder rotation, constant diameter growth, finishing, cooling, cooling, and unloading from the furnace.

[0168] For example, Figure 8A schematic diagram of a crystal growth system is shown. The system includes a crystal growth furnace body 810, a crystal pulling mechanism 820, a crucible lifting mechanism 830, a heater 840, a CCD diameter measuring device 850, and a crystal growth control device 860. The CCD diameter measuring device 850 is located at the top of the furnace body 810 and is used to measure the diameter of the silicon crystal 880. The crystal pulling mechanism 820 measures the length of the silicon crystal 880, the actual pulling speed, and other crystal growth data, and sends the acquired data to the crystal growth control device 860. The crystal growth control device 860 is communicatively connected to the crystal pulling mechanism 820, the crucible lifting mechanism 830, and the heater 840. The crystal growth control device 860 can execute the crystal growth control method 200 described above. It can adjust the pulling speed of the crystal pulling mechanism 820, the lifting speed of the crucible lifting mechanism 830, and the heating power of the heater 840 according to the diameter of the silicon crystal to control the growth process of the silicon crystal 880, so that the silicon melt 870 in the crystal growth furnace body 810 grows into a qualified silicon single crystal.

[0169] The following describes the crystal pulling process using existing technologies and the technology described in this application:

[0170] The MCZ (using a superconducting magnetic field) large-size single crystal furnace pulls defect-free semiconductor silicon crystals with a diameter of 310mm, and the relevant data on crystal growth are stored in a database in real time.

[0171] Using existing control methods and based on past experience data, the length was divided into 50 segments, each with a target heating power curve set as a feedforward condition. During the growth of the next 10 crystals, the target power feedforward condition was adjusted 1-2 times based on feedback from the crystal pulling data. Of the resulting crystals, two ingots did not have complete ends, and two ingots had diameter deviations exceeding 2mm in multiple segments; there were numerous segments with pulling speed deviations exceeding 1.0%, particularly at the constant-diameter beginning and end; after defect analysis, the average yield of silicon wafers within the effective length was 75%.

[0172] Using the crystal growth control method, apparatus, system, or storage medium of this application embodiment, based on the actual power data of 5-8 complete growth ingots in the past, the target power feedforward condition is recalculated to implement crystal pulling control, resulting in a complete crystal with a pulling speed deviation smaller than the previous ingot results. The target power feedforward condition is then automatically updated, and 10 ingots are pulled continuously. One ingot is not completely finished, and there are no cases where the diameter deviation is greater than 2 mm. There are basically no segments with a pulling speed deviation greater than 1.0%. After processing into silicon wafers and undergoing defect analysis, the yield of silicon wafers within the effective length is 90%-95%.

[0173] The crystal pulling results obtained using existing technologies and the technologies described in this application are shown in the table below:

[0174] project Existing technology This application technology Maximum fluctuation in crystal head pulling speed (+ / -%) 2.0 0.5 Maximum fluctuation in pulling speed at the center of the crystal (+ / -%) 1.0 0.3 Maximum fluctuation in crystal tail pulling speed (+ / -%) 1.5 0.5 Average crystal yield (%) 75％ 92％

[0175] Among them, the maximum pulling speed volatility (%) refers to the deviation between the maximum pulling speed (minimum pulling speed) and the target pulling speed of the crystal, excluding the target pulling speed.

[0176] As can be seen, compared with the existing technology, this application can smoothly control the fluctuation of crystal diameter, reduce crystal native defects, and improve crystal yield.

[0177] Based on the above description, the crystal growth control method, apparatus, system, and storage medium according to the embodiments of this application calculate the corresponding power by weighting the diameter deviation weight and the pulling speed deviation weight respectively, and then weight the obtained power to obtain the target heating power for controlling the next crystal growth process. This enables the crystal pulling control to gradually have the ability to self-iterate and adapt, adapt to the aging of the hot field heater, reduce the dependence on human experience, make the actual diameter and pulling speed of the crystal closer to the target set value, control the defects in the crystal, reduce the occurrence rate of primary defects in the crystal, and improve the yield of the crystal.

[0178] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0179] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0180] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative. For instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another device, or some features may be ignored or not executed.

[0181] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0182] Similarly, it should be understood that, in order to streamline this application and aid in understanding one or more of the various inventive aspects, features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, its inventive point lies in solving the corresponding technical problem with features fewer than all features of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0183] Those skilled in the art will understand that, apart from the mutual exclusion of features, all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or units of any method or apparatus so disclosed can be combined in any combination. Unless otherwise expressly stated, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature that serves the same, equivalent, or similar purpose.

[0184] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features included in other embodiments but not others, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0185] The various component embodiments of this application can be implemented in hardware, or as software modules running on one or more processors, or a combination thereof. Those skilled in the art will understand that microprocessors or digital signal processors (DSPs) can be used in practice to implement some or all of the functions of some modules according to the embodiments of this application. This application can also be implemented as an apparatus program (e.g., a computer program and computer program product) for performing part or all of the methods described herein. Such an implementation of this application can be stored on a computer-readable medium, or can be in the form of one or more signals. Such signals can be downloaded from an Internet website, provided on a carrier signal, or provided in any other form.

[0186] It should be noted that the above embodiments are illustrative of this application and not restrictive, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. This application can be implemented by means of hardware comprising several different elements and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by the same item of hardware. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.

[0187] The above description is merely a specific embodiment or illustration of the embodiments of this application. The scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. The scope of protection of this application shall be determined by the scope of the claims.

Claims

1. A method for controlling crystal growth, characterized in that, include: Acquire crystal growth data of the previous crystal sequence; the previous crystal sequence includes multiple crystals, and the crystal growth data includes the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each of the multiple crystals at a predetermined length position; The diameter deviation weight is determined based on the set diameter of each crystal at the predetermined length position and the actual diameter within the predetermined time period, and the first heating power is obtained by weighted summation based on the actual heating power of each crystal at the predetermined length position and its diameter deviation weight. The pulling speed deviation weight is determined based on the set pulling speed and the actual pulling speed within the set time period for each crystal at the predetermined length position, and the weighted sum is performed based on the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power; The first heating power and the second heating power are weighted and summed to obtain the target heating power for the next crystal at the predetermined length position, and the growth process of the next crystal is controlled according to the target heating power.

2. The crystal growth control method as described in claim 1, characterized in that, The determination of the diameter deviation weight based on the set diameter of each crystal at the predetermined length position and the actual diameter within the set time period includes: The actual diameter of each crystal at the predetermined length position within the set time period is calculated using the moving average method to obtain the average diameter within the set time period. The diameter deviation is calculated based on the set diameter of each crystal at the predetermined length position and the average diameter over the set time period; The diameter deviation rate is calculated based on the diameter deviation of each crystal at the predetermined length position and the set diameter; The diameter deviation weight is determined based on the diameter deviation rate of each crystal at the predetermined length position.

3. The crystal growth control method as described in claim 2, characterized in that, The diameter deviation weight of each crystal is exponentially related to its own diameter deviation rate.

4. The crystal growth control method as described in claim 1, characterized in that, The step of weighting and summing the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power includes: Calculate the product of the actual heating power of each crystal at the predetermined length position and its diameter deviation weight; The first heating power is obtained by summing all the calculated products.

5. The crystal growth control method as described in claim 1, characterized in that, The determination of the pulling speed deviation weight based on the set pulling speed of each crystal at the predetermined length position and the actual pulling speed within the set time period includes: The actual pulling speed of each crystal at the predetermined length position within the set time period is calculated using the moving average method to obtain the average pulling speed within the set time period. The pulling speed deviation is calculated based on the set pulling speed of each crystal at the predetermined length position and the average pulling speed within the set time period. The pulling speed deviation rate is calculated based on the pulling speed deviation of each crystal at the predetermined length position and the set pulling speed. The pulling speed deviation weight is determined based on the pulling speed deviation rate of each crystal at the predetermined length position.

6. The crystal growth control method as described in claim 1, characterized in that, The step of weighting and summing the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power includes: Calculate the product of the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight; The calculated products are summed to obtain the second heating power.

7. The crystal growth control method as described in claim 5, characterized in that, The pulling speed deviation weight of each crystal is exponentially related to its own pulling speed deviation rate.

8. The crystal growth control method as described in claim 1, characterized in that, The step of weighted summing of the first heating power and the second heating power to obtain the target heating power for the next crystal at the predetermined length position includes: Calculate the first weighted target heating power based on the first heating power and the diameter weighting factor; The second weighted target heating power is calculated based on the second heating power and the pulling speed weighting factor; The first weighted target heating power and the second weighted target heating power are summed to obtain the target heating power.

9. The crystal growth control method as described in claim 8, characterized in that, When the constant diameter length of the next crystal is 0-300 mm, the diameter weighting factor is greater than 0 and less than 0.3, and the pulling speed weighting factor is greater than or equal to 0.3 and less than 1.0; When the diameter length of the next crystal is greater than 300 mm, the diameter weighting factor is greater than or equal to 0.3 and less than 1.0, and the pulling speed weighting factor is greater than 0 and less than 0.

3.

10. The crystal growth control method as described in claim 1, characterized in that, The method further includes: Obtain the actual heating power and target heating power during the next crystal growth process; Calculate the deviation between the actual heating power and the target heating power during the next crystal growth process; The target heating power in the next crystal growth process is corrected by the deviation based on the proportional-integral-derivative control method.

11. A crystal growth control device, characterized in that, include: The data acquisition module is used to acquire crystal growth data of the previous crystal sequence; the previous crystal sequence includes multiple crystals, and the crystal growth data includes the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each of the multiple crystals at a predetermined length position; The first heating power calculation module is used to determine the diameter deviation weight of each crystal based on the set diameter at the predetermined length position and the actual diameter within the predetermined time period, and to perform a weighted summation based on the actual heating power of each crystal at the predetermined length position and its diameter deviation weight to obtain the first heating power; The second heating power calculation module is used to determine the pulling speed deviation weight of each crystal based on the set pulling speed at the predetermined length position and the actual pulling speed within the set time period, and to perform a weighted sum based on the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power. The target heating power calculation module is used to perform a weighted summation of the first heating power and the second heating power to obtain the target heating power of the next crystal at the predetermined length position, and to control the growth process of the next crystal according to the target heating power.

12. A crystal growth control device, comprising a memory, a processor, and a computer program stored in the memory and running on the processor, characterized in that, When the processor executes the program, it implements the crystal growth control method according to any one of claims 1 to 10.

13. A crystal growth control device, characterized in that, include: A sensor is used to collect crystal growth data of the previous crystal sequence; the previous crystal sequence includes multiple crystals, and the crystal growth data includes the actual heating power, set diameter, actual diameter within a set time period, set pulling speed, and actual pulling speed within a set time period for each crystal at a predetermined length position. Processor, used for: The diameter deviation weight is determined based on the set diameter of each crystal at the predetermined length position and the actual diameter within the predetermined time period, and the first heating power is obtained by weighted summation based on the actual heating power of each crystal at the predetermined length position and its diameter deviation weight. The pulling speed deviation weight is determined based on the set pulling speed and the actual pulling speed within the set time period for each crystal at the predetermined length position, and the weighted sum is performed based on the actual heating power of each crystal at the predetermined length position and its pulling speed deviation weight to obtain the second heating power; The first heating power and the second heating power are weighted and summed to obtain the target heating power for the next crystal at the predetermined length position, and the growth process of the next crystal is controlled according to the target heating power.

14. A crystal growth system, characterized in that, It includes a crystal growth furnace and a crystal growth control device as described in any one of claims 11 to 13.

15. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the program is executed by the processor, it implements the crystal growth control method according to any one of claims 1 to 10.

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