Power module and method for producing a power module
By using substrate and bump connection design and interconnect components, multiple power modules can be processed and formed simultaneously, which solves the problem of low fabrication efficiency in the prior art, improves fabrication efficiency and ensures the safety of the substrate and connection stability.
Patent Information
- Application Number
- CN202310668389.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-06-07
- Publication Date
- 2025-11-04
- Estimated Expiration
- 2043-06-07
AI Technical Summary
In the existing technology, the substrate is an independent plate structure, which means that only one substrate can be soldered and packaged at a time, resulting in long time consumption and low manufacturing efficiency when mass-producing power modules.
The design employs a substrate and bump design, connecting multiple substrates to form an integrated structure. The substrates are simultaneously soldered and packaged. After fabrication, the bumps can be separated to obtain independent modules. Combined with the design of interconnect components and molding compounds, multiple modules can be processed and formed simultaneously.
This improved the fabrication efficiency of power modules, reduced fabrication time, and ensured the safety and stability of the substrate, while also enhancing connection strength and appearance.
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Figure CN116525553B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of electronic devices, and in particular, to a power module and a preparation method of the power module. BACKGROUND
[0002] In the related art, when the power module is prepared, because the substrate is an independent plate structure, only one substrate can be welded and packaged each time, so that the time consumed is relatively long when the power module is prepared in large quantities, and the overall preparation efficiency is relatively low. SUMMARY
[0003] In order to solve at least one of the above technical problems, a first object of the present application provides a power module.
[0004] A second object of the present application further provides a preparation method of the power module.
[0005] Therefore, according to the first object of the present application, the present application provides a power module, which comprises: a substrate; an interconnection assembly arranged on a first working surface of the substrate and electrically connected with the substrate, used for receiving an external current and performing power adjustment on the external current; and a plurality of protrusions, part of the protrusions being arranged on a side surface of the substrate along a length direction of the substrate, and the other part of the protrusions being arranged on the side surface of the substrate along a width direction of the substrate, the protrusions being capable of being connected with or separated from protrusions arranged on a substrate of another power module.
[0006] The power module provided by the present application comprises the substrate, the interconnection assembly and the plurality of protrusions, the substrate being a main structural member of the entire power module and used for supporting other structures. The interconnection assembly is arranged on the first working surface of the substrate and electrically connected with the substrate, used for receiving the external current and performing the power adjustment on the external current, so that the finally combined power module can realize the power adjustment on the current. Specifically, when the power module is used, the external current enters the interconnection assembly of the power module, the interconnection assembly performs the power adjustment on the external current, and the adjusted external current can be transmitted to the substrate and finally transmitted to the outside through the substrate.
[0007] Among the plurality of protrusions comprised by the power module, part of the protrusions are arranged on the side surface of the substrate along the length direction of the substrate, and the other part of the protrusions are arranged on the side surface of the substrate along the width direction of the substrate, that is, the protrusions are arranged on the front side surface, the rear side surface, the left side surface and the right side surface of the substrate, and the protrusions are capable of being connected with or separated from the protrusions arranged on the substrate of another power module.
[0008] Specifically, the connection between the bump provided on the substrate of one power module and the bump provided on the substrate of another power module is in the preparation of the power module, that is, when the power module is in a preparation state. When preparing, the substrates of the plurality of power modules are indirectly connected together through the connection between the bumps to form an integrated structure, and the plurality of substrates are arranged in order, so that the plurality of substrates can be simultaneously welded and packaged, and the interconnection components can be welded on the plurality of substrates, thereby realizing simultaneous processing and molding of the plurality of power modules, reducing the time consumed for mass production of the power module, and improving the preparation efficiency of the power module.
[0009] When the power module is in a preparation completion state, the bump provided on the substrate of the prepared power module can be separated from the bump provided on the substrate of another power module, thereby obtaining a plurality of independent power modules. When separating, the bump is operated, thereby avoiding damage to the substrate and ensuring the safety of the substrate.
[0010] In addition, the power module in the above technical solution provided by the present application can also have the following additional technical features:
[0011] In the above technical solution, the interconnection component includes: a plurality of chips provided on the first working surface and used for power adjustment of the external current; an interconnection layer connected with the plurality of chips and used for interconnecting the plurality of chips; and a terminal connected with the interconnection layer, the terminal being used for receiving the external current and guiding the external current into the interconnection layer.
[0012] In the technical solution, the interconnection component specifically includes the plurality of chips, the interconnection layer, and the terminal. The plurality of chips are provided on the first working surface at the setting position, and are specifically used for power adjustment of the external current in function. The interconnection layer is connected with the plurality of chips and is used for interconnecting the plurality of chips, that is, electrically connecting the plurality of chips. The plurality of chips are electrically interconnected through the interconnection layer and collectively perform power adjustment of the external current. The terminal is connected with the interconnection layer, and the terminal is used for receiving the external current and guiding the external current into the interconnection layer.
[0013] Through the cooperation of the plurality of chips, the interconnection layer, and the terminal, power adjustment of the external current can be finally realized.
[0014] In any of the above technical solutions, the interconnection layer includes: a metal conductive pattern layer, a pattern of the metal conductive pattern layer corresponding to the plurality of chips.
[0015] In the technical solution, the interconnection layer specifically includes the metal conductive pattern layer, and a pattern of the metal conductive pattern layer corresponds to the plurality of chips. The pattern of the metal conductive pattern layer can be set according to the interconnection relationship between the chips to ensure that the plurality of chips can be smoothly electrically interconnected.
[0016] In any of the above technical solutions, the interconnection assembly further comprises: a first solder layer arranged between the plurality of chips and the first working surface to solder the plurality of chips to the first working surface; and a second solder layer arranged between the interconnection layer and the terminal to solder the terminal to the interconnection layer.
[0017] In this technical solution, the interconnection assembly further comprises the first solder layer and the second solder layer, the first solder layer is arranged between the plurality of chips and the first working surface to solder the plurality of chips to the first working surface, thereby ensuring stable connection between the chips and the first working surface of the substrate and ensuring that a complete circuit can be formed between the chips and the substrate, and current can be introduced into the substrate and finally transmitted to the outside of the power module.
[0018] The second solder layer is arranged between the interconnection layer of the interconnection assembly and the terminal to solder the terminal to the interconnection layer, thereby ensuring stable connection between the terminal and the interconnection layer and ensuring that a complete circuit can be formed between the terminal and the interconnection layer, and current can be smoothly introduced from the terminal into the interconnection layer.
[0019] In any of the above technical solutions, a thread is arranged on the outer periphery of the terminal, and the thread is used to cooperate with a nut or a screw; or an inner hole is arranged on the terminal, and a thread is arranged on the inner wall of the inner hole, and the thread is used to cooperate with a nut or a screw.
[0020] In this technical solution, on the one hand, a thread is arranged on the outer periphery of the terminal of the interconnection assembly, and the thread is used to cooperate with a nut or a screw to achieve fastening connection with the terminal structure of the external circuit.
[0021] On the other hand, an inner hole is arranged on the terminal of the interconnection assembly, and a thread is arranged on the inner wall of the inner hole, and the thread is used to cooperate with a nut or a screw to achieve fastening connection with the terminal structure of the external circuit.
[0022] In any of the above technical solutions, the power module further comprises: a plastic package body connected to the first working surface and the peripheral side of the substrate, and covering the interconnection assembly.
[0023] In this technical solution, the power module further comprises the plastic package body, which is specifically connected to the first working surface and the peripheral side of the substrate, and covers the interconnection assembly, thereby protecting the interconnection assembly and improving the service life of the power module.
[0024] In any of the above technical solutions, the power module further comprises: a protruding portion arranged on the plastic package body; and a recess is arranged on the substrate, and the slot opening of the recess is located on the first working surface, and the protruding portion can be inserted into the recess and abut against the side wall of the recess.
[0025] In the technical scheme, the power module further comprises a protruding part, and the protruding part is arranged on the plastic package body. The base plate is provided with a groove, and the groove is arranged on the first working surface. The protruding part can be inserted into the groove and abut against the sidewall of the groove. Through the cooperation of the protruding part and the groove, the plastic package body is clamped on the base plate, and the firmness of the connection between the two is improved.
[0026] In any of the above technical schemes, a plurality of accommodating grooves are arranged on the plastic package body, one accommodating groove corresponds to one protruding block, and the accommodating groove is used for accommodating the protruding block.
[0027] In the technical scheme, a plurality of accommodating grooves are further arranged on the plastic package body. In terms of position, one accommodating groove corresponds to one protruding block, and the accommodating groove is used for accommodating the protruding block. When the plastic package body is connected to the first working surface of the base plate and the circumferential side of the base plate and covers the interconnection assembly, a plurality of protruding blocks arranged on the base plate are inserted into different accommodating grooves.
[0028] Through the arrangement of the plurality of accommodating grooves arranged on the plastic package body, on the one hand, the protruding blocks arranged on the base plate can be accommodated, the appearance neatness of the power module is improved, and on the other hand, the plastic package body can be clamped on the base plate through the cooperation of the accommodating grooves and the protruding blocks, and the connection stability between the two is improved.
[0029] In any of the above technical schemes, a connecting hole is further arranged on the plastic package body, and the connecting hole is used for allowing the terminal to pass through.
[0030] In the technical scheme, a connecting hole is further arranged on the plastic package body, and the connecting hole is used for allowing the terminal of the interconnection assembly to pass through. Through the arrangement of the connecting hole, the terminal can be prevented from being blocked after the plastic package body covers the interconnection assembly, and then the terminal structure of the external circuit can be conveniently connected with the terminal of the interconnection assembly, and the import of external current is smoothly realized.
[0031] In any of the above technical schemes, the base plate further comprises a second working surface, the second working surface and the first working surface are two surfaces opposite to each other of the base plate, and the power module further comprises a plurality of mounting holes arranged on the base plate in a spaced manner. The mounting holes are arranged on the second working surface, and the mounting holes are used for mounting the external package body.
[0032] In the technical scheme, the base plate further comprises a second working surface, the second working surface and the first working surface are two surfaces opposite to each other of the base plate, and the power module further comprises a plurality of mounting holes arranged on the base plate in a spaced manner. The mounting holes are arranged on the second working surface, and the mounting holes are used for mounting the external package body. Specifically, the mounting holes are hole structures for mounting the external package body. When the external package body is mounted, the external package body can be opposite to the base plate. Then, a connecting member such as a screw is connected with the external package body first, and then inserted into the mounting hole, so that the external package body is mounted to the base plate.
[0033] The setting of the plurality of mounting holes on the second working surface of the substrate reduces the operation difficulty of mounting the external package on the substrate, and improves the stability of the external package after being connected with the substrate.
[0034] According to the second object of the present application, the present application provides a preparation method of the power module, for preparing the power module in any of the above technical solutions, the preparation method comprises: hollow carving the whole plate according to the target size of the substrate and the bump, to form a plurality of substrates connected with each other through the bumps on the whole plate; welding the interconnection assembly on each substrate; separating the bump arranged on the substrate after welding from the bump arranged on the adjacent substrate, to obtain a plurality of power modules.
[0035] The preparation method of the power module specifically comprises: first, hollow carving the whole plate according to the target size of the substrate and the bump, to form a plurality of substrates connected with each other through the bumps on the whole plate, then welding the interconnection assembly on each substrate, through the connection between the bumps, the substrates of the plurality of power modules are connected together, the substrates are placed in order, and then the plurality of substrates can be simultaneously welded and packaged, the interconnection assembly is simultaneously welded on the plurality of substrates, the simultaneous processing and forming of the plurality of power modules are realized, and the preparation efficiency of the power module is improved.
[0036] Then, the bump arranged on the substrate after welding is separated from the bump arranged on the adjacent substrate, to obtain a plurality of power modules. When the power module is in a preparation completed state, the bump arranged on the substrate of the prepared power module can be separated from the bump arranged on the substrate of another power module, to obtain a plurality of independent power modules, and when the separation is performed, the bump is operated, so that the substrate is avoided from being damaged, and the safety of the substrate is ensured.
[0037] In the above technical solution, the step of welding the interconnection assembly on each substrate specifically comprises: connecting a plurality of chips of the interconnection assembly to the first working surface of the substrate through a first solder layer formed by reflow soldering of solder paste, to form a first intermediate structure; avoiding the chips to perform first injection curing on the first intermediate structure, to form an insulating layer with a plurality of avoiding openings on the first working surface, wherein the avoiding openings correspond to the side of the chips away from the first working surface; performing sputtering and electroplating, sintering metal or filling conductive material on the insulating layer and in the avoiding openings, to form an interconnection layer of the interconnection assembly connecting the plurality of chips, to obtain a second intermediate structure; avoiding the interconnection layer to perform second injection curing on the second intermediate structure, to form a plastic package with a connecting hole on the substrate, wherein the hole of the connecting hole corresponds to the side of the interconnection layer away from the chips; filling the solder paste into the connecting hole, and connecting the terminals of the interconnection assembly to the interconnection layer through a second solder layer formed by reflow soldering of the solder paste, to complete the welding of the interconnection assembly and the substrate.
[0038] In the technical solution, the specific process of welding the interconnection assembly on the substrate is limited. First, the plurality of chips of the interconnection assembly is connected to the first working surface of the substrate through the first solder layer formed by reflow soldering of the solder paste, to form a first intermediate structure. The plurality of chips is connected to the substrate by welding, so as to not only ensure the stable connection between the chips and the first working surface of the substrate, but also ensure that a complete circuit can be formed between the chips and the substrate, and the current can be introduced into the substrate and finally transmitted to the outside of the power module.
[0039] After obtaining the first intermediate structure, the first intermediate structure is subjected to first injection molding and curing to form an insulating layer with a plurality of avoiding openings on the first working surface, wherein the avoiding openings correspond to the side of the chip away from the first working surface. Through the preparation of the first injection molding and curing of the first intermediate structure by avoiding the chip, it can be ensured that the insulating layer is formed on the first working surface, so that only the current processed by the chip can flow into the substrate, and damage or pollution to the upper surface of the chip can also be avoided.
[0040] After completing the first injection molding and curing, on the one hand, sputtering and electroplating are performed on the insulating layer and in the avoiding openings to form an interconnection layer of the interconnection assembly connecting the plurality of chips, to obtain a second intermediate structure. The interconnection layer is obtained by sputtering and electroplating, which can more easily adjust the pattern shape of the interconnection layer, so that the interconnection layer can be suitable for the chip and meet the electrical interconnection requirement between the plurality of chips.
[0041] On the other hand, after completing the first injection molding and curing, sintering metal can also be performed on the insulating layer and in the avoiding openings to form the interconnection layer of the interconnection assembly connecting the plurality of chips.
[0042] On the other hand, after completing the first injection molding and curing, conductive material can also be filled in the insulating layer and in the avoiding openings to form the interconnection layer of the interconnection assembly connecting the plurality of chips, to meet the electrical interconnection requirement between the plurality of chips.
[0043] The second intermediate structure is subjected to second injection molding and curing by avoiding the interconnection layer to form a plastic package with a connecting hole on the substrate, wherein the hole of the connecting hole corresponds to the side of the interconnection layer away from the chip. The plastic package is formed on the substrate and the interconnection assembly to protect the substrate and the interconnection assembly.
[0044] The solder paste is filled into the connecting hole, and the second solder layer formed by reflow soldering of the solder paste connects the terminal of the interconnection assembly to the interconnection layer, to complete the welding of the interconnection assembly and the substrate.
[0045] The terminal is connected to the interconnection layer by welding, so as to not only ensure the stable connection between the terminal and the interconnection layer, but also ensure that a complete circuit can be formed between the terminal and the interconnection layer, and the current can be smoothly introduced into the interconnection layer from the terminal.
[0046] In the above technical solution, before the step of welding the interconnection assembly on each substrate, the preparation method further comprises: drilling and carving each substrate to open a groove on each substrate; after the step of avoiding the interconnection layer and performing second injection curing on the second intermediate structure to form a plastic package body with a connecting hole on the substrate, the preparation method further comprises: introducing an injection curing agent into the groove to form a protruding portion on the plastic package body abutting against the sidewall of the groove.
[0047] In the above technical solution, before the step of welding the interconnection assembly on each substrate, the preparation method further comprises: drilling and carving each substrate to open a groove on each substrate; after the step of avoiding the interconnection layer and performing second injection curing on the second intermediate structure to form a plastic package body with a connecting hole on the substrate, the preparation method further comprises: introducing an injection curing agent into the groove to form a protruding portion on the plastic package body abutting against the sidewall of the groove.
[0048] In the above technical solution, before the step of welding the interconnection assembly on each substrate, the preparation method further comprises: drilling and carving each substrate to open a groove on each substrate; after the step of avoiding the interconnection layer and performing second injection curing on the second intermediate structure to form a plastic package body with a connecting hole on the substrate, the preparation method further comprises: introducing an injection curing agent into the groove to form a protruding portion on the plastic package body abutting against the sidewall of the groove.
[0049] Additional aspects and advantages of the application will be apparent from the following description of the application, as embodied and practicable by the claims. BRIEF DESCRIPTION OF DRAWINGS
[0050] The above and / or additional aspects and advantages of the present application will become apparent and be readily appreciated from the following description, taken in conjunction with the accompanying drawings, in which:
[0051] Figure 1 A structural schematic diagram of a power module in an embodiment of the present application is shown;
[0052] Figure 2 A structural schematic diagram of a power module in another embodiment of the present application is shown;
[0053] Figure 3 A structural schematic diagram of a power module in another embodiment of the present application is shown; Figure 2 A top view of the power module in the shown embodiment is shown;
[0054] Figure 4 A top view of the power module in the shown embodiment is shown; Figure 2 A bottom view of the power module in the shown embodiment is shown;
[0055] Figure 5 A bottom view of the power module in the shown embodiment is shown; Figure 3 An A-A sectional view of the power module in the shown embodiment is shown;
[0056] Figure 6 An A-A sectional view of the power module in the shown embodiment is shown; Figure 2 A structural schematic diagram of a terminal of the interconnection assembly in the shown embodiment is shown;
[0057] Figure 7 A power module is shown Figure 2 A schematic view of a structure of a substrate in a power module in an embodiment is shown;
[0058] Figure 8 A schematic view of a structure of a power module in another embodiment of the present application is shown;
[0059] Figure 9 A power module is shown Figure 8 A schematic view of a structure of a terminal of an interconnection assembly in an embodiment is shown;
[0060] Figure 10 A schematic view of a structure of a power module in another embodiment of the present application is shown;
[0061] Figure 11 A power module is shown Figure 10 A schematic view of a structure of a terminal of an interconnection assembly in an embodiment is shown;
[0062] Figure 12 A power module is shown Figure 11 A B-B sectional view of a terminal in an embodiment is shown;
[0063] Figure 13 A schematic view of a structure of a plastic package of a power module in an embodiment is shown;
[0064] Figure 14 A power module is shown Figure 13 A schematic view of a structure of a plastic package of a power module in an embodiment is shown;
[0065] Figure 15 A power module is shown Figure 13 A schematic view of a structure of a plastic package of a power module in an embodiment is shown;
[0066] Figure 16 A power module is shown Figure 13 A schematic view of a structure of a plastic package of a power module in an embodiment is shown;
[0067] Figure 17 A schematic view of a structure of a power module in a preparation state in an embodiment of the present application is shown;
[0068] Figure 18 A schematic view of a preparation flow of a power module in an embodiment of the present application is shown;
[0069] Figure 19 A schematic view of a preparation flow of a power module in an embodiment of the present application is shown;
[0070] Figure 20 A schematic view of a preparation flow of a power module in an embodiment of the present application is shown;
[0071] Figure 21 Figure 3 shows a flow diagram of a method for manufacturing a power module according to an embodiment of the present application.
[0072] wherein, Figures 1 to 18 The correspondence between the reference signs and the component names is as follows:
[0073] 100 power module, 110 substrate, 112 first working surface, 114 second working surface, 116 recess, 118 mounting hole, 120 first hole, 122 second hole, 124 notch, 130 interconnection assembly, 132 chip, 134 first solder layer, 136 interconnection layer, 138 second solder layer, 140 terminal, 142 thread, 144 inner hole, 150 bump, 160 plastic package, 162 connecting hole, 164 accommodating groove, 168 protruding part, 170 third hole, 172 fourth hole, 174 metal conductive layer, 180 insulating layer, 200 whole plate. DETAILED DESCRIPTION
[0074] In order to more clearly understand the above objectives, features and advantages of the present application, the following further specifically describes the present application with reference to the accompanying drawings and specific embodiments. It should be noted that the embodiments of the present application and the features in the embodiments can be combined with each other without conflict.
[0075] In the following description, a large number of specific details are set forth in order to facilitate a thorough understanding of the present application, however, the present application can also be implemented in other ways different from those described herein, and therefore, the protection scope of the present application is not limited by the specific embodiments disclosed below.
[0076] The following specifically describes the power module 100 and the method for manufacturing a power module according to some embodiments of the present application with reference to the accompanying drawings. Figures 1 to 21 The following specifically describes the power module 100 and the method for manufacturing a power module according to some embodiments of the present application with reference to the accompanying drawings.
[0077] As shown in Figure 1 , Figure 5 and Figure 8 In an embodiment of the present application, the power module 100 comprises: a substrate 110; an interconnection assembly 130 disposed on the first working surface 112 of the substrate 110 and electrically connected with the substrate 110, for receiving external current and performing power adjustment on the external current; a plurality of bumps 150, part of the bumps 150 being disposed on the side surface of the substrate 110 along the length direction of the substrate 110, and another part of the bumps 150 being disposed on the side surface of the substrate 110 along the width direction of the substrate 110, the bumps 150 being capable of being connected with or separated from the bumps 150 disposed on the substrate 110 of another power module 100.
[0078] In this embodiment, the power module 100 provided by the present application comprises a substrate 110, an interconnection assembly 130 and a plurality of protrusions 150. The substrate 110 is the main structural member of the entire power module 100 and is used to support other structures. The interconnection assembly 130 is arranged on the first working surface 112 of the substrate 110 and is electrically connected with the substrate 110. The interconnection assembly 130 is used to receive external current and perform power adjustment on the external current, so that the finally combined power module 100 can realize power adjustment on the current. Specifically, when the power module 100 is used, the external current enters the interconnection assembly 130 of the power module 100, the interconnection assembly 130 performs power adjustment on the external current, and the adjusted external current can be transmitted to the substrate 110 and finally delivered to the outside through the substrate 110.
[0079] As shown in FIG. 1, Figure 7 a part of the protrusions 150 are arranged on the side surface of the substrate 110 along the length direction of the substrate 110, and another part of the protrusions 150 are arranged on the side surface of the substrate 110 along the width direction of the substrate 110, that is, the protrusions 150 are arranged on the front side surface, the rear side surface, the left side surface and the right side surface of the substrate 110. The protrusions 150 can be connected with or separated from the protrusions 150 arranged on the substrate 110 of another power module 100.
[0080] Specifically, as shown in FIG. 2, Figure 17 the connection between the protrusions 150 arranged on the substrate 110 of one power module 100 and the protrusions 150 arranged on the substrate 110 of another power module 100 is performed when the power module 100 is in a preparation state, that is, when the power module 100 is prepared. When prepared, the substrates 110 of the plurality of power modules 100 are indirectly connected together through the connection between the protrusions 150 to form an integrated structure, and the plurality of substrates 110 are placed in order, so that the plurality of substrates 110 can be simultaneously welded and packaged, and the interconnection assemblies 130 can be simultaneously welded on the plurality of substrates 110, thereby realizing simultaneous processing and forming of the plurality of power modules 100 and improving the preparation efficiency of the power module 100.
[0081] When the power module 100 is in a preparation completed state, the protrusions 150 arranged on the substrate 110 of the prepared power module 100 can be separated from the protrusions 150 arranged on the substrate 110 of another power module 100 to obtain a plurality of independent power modules 100. Since the protrusions 150 are operated when separated, the substrates 110 are not damaged, and the safety of the substrates 110 is ensured.
[0082] Specifically, the substrate 110 is a plate body with excellent heat dissipation and electrical conductivity.
[0083] As shown in FIG. 3, Figure 2 ,Figure 5 and Figure 8 As shown in
[0084] In this embodiment, the interconnection assembly 130 specifically includes the plurality of chips 132, the interconnection layer 136 and the terminal 140. In the setting position, the plurality of chips 132 are arranged on the first working surface 112, and in the function, the plurality of chips 132 are specifically used for power adjustment of the external current. The interconnection layer 136 is connected with the plurality of chips 132, and is used for electrical connection between the plurality of chips 132, and the plurality of chips 132 are electrically interconnected through the interconnection layer 136. The terminal 140 is connected with the interconnection layer 136, and the terminal 140 is used for receiving the external current and guiding the external current into the interconnection layer 136.
[0085] Through the cooperation of the plurality of chips 132, the interconnection layer 136 and the terminal 140, the power adjustment of the external current is finally realized.
[0086] Specifically, the number of the chips 132 in the interconnection assembly 130 can be determined according to actual needs, and taking four chips 132 as an example, the four chips 132 are symmetrically distributed on both sides of the terminal 140, so as to maximize reduce the thermal coupling between the chips 132 when the power module 100 works in the case of fixed size of the substrate 110, thereby reducing the working temperature of the power module 100.
[0087] Specifically, when the power module 100 works, the current flows into the power module 100 from the terminal 140, and then flows to the plurality of chips 132 through the interconnection layer 136, and then flows to the substrate 110.
[0088] Further, as shown in Figure 10 The number of the chips 132 in the interconnection assembly 130 is not limited to four, and can be more, such as eight, ten or twelve, etc., that is, the power module 100 proposed in the present application is applicable to the interconnection of a plurality of chips 132. Specifically, as shown in Figure 10 、 Figure 11 and Figure 12 In one setting, the number of the chips 132 in the interconnection assembly 130 is eighteen, and the number of the terminals 140 in the interconnection assembly 130 is three. Specifically, when the number of the chips 132 is large, each terminal 140 includes a base and two connecting columns, and the inner hole 144 is formed on the two connecting columns, and the screw thread 142 is arranged on the inner wall of the inner hole 144.
[0089] Specifically, when the number of chips 132 is 18, the specific layout structure of the interconnect components 130 is as follows: Figure 10 As shown, 18 chips 132 are distributed in two columns on the substrate 110. Two of the three terminals 140 are respectively disposed at one end of each of the 18 chips, while the third is disposed between the two columns of chips 132. An interconnect layer 136 connects the 18 chips 132 and the terminals 140, thereby enabling external current to be introduced through the terminals 140 and transmitted to the multiple chips 132. The multiple chips 132 adjust the power of the external current, and finally transmit it to the substrate 110 and outward through the substrate 110. Furthermore, the maximum number of chips 132 is not limited to 18, and can exceed 18. The size of the substrate 110, the layout of the interconnect layer 136, and the number and layout of the terminals 140 can be set according to the number of chips 132 to smoothly realize the interconnection of multiple chips 132.
[0090] like Figure 2 , Figure 5 , Figure 8 and Figure 10 As shown, in one embodiment of the present invention, the interconnect layer 136 includes a metal conductive layer 174, the pattern of which corresponds to a plurality of chips 132.
[0091] In this embodiment, the interconnect layer 136 specifically includes a conductive metal layer 174, the pattern of which corresponds to the plurality of chips 132. The pattern of the conductive metal layer 174 can be set according to the interconnection relationship between the chips 132 to ensure that the plurality of chips 132 can be electrically interconnected smoothly.
[0092] Specifically, the thickness and area of the interconnect layer 136 are designed to match the current carried by the power module 100.
[0093] like Figure 2 , Figure 5 and Figure 8 As shown, in one embodiment of the present invention, the interconnect component 130 further includes: a first solder layer 134 disposed between a plurality of chips 132 and a first working surface 112, so that the plurality of chips 132 are soldered to the first working surface 112; and a second solder layer 138 disposed between an interconnect layer 136 and a terminal 140, so that the terminal 140 is soldered to the interconnect layer 136.
[0094] In this embodiment, the interconnection assembly 130 further comprises a first solder layer 134 and a second solder layer 138, the first solder layer 134 is arranged between the plurality of chips 132 and the first working surface 112 to solder the plurality of chips 132 and the first working surface 112, so as to ensure the stable connection between the chips 132 and the first working surface 112 of the substrate 110, and ensure that a complete circuit can be formed between the chips 132 and the substrate 110, and the current can be introduced into the substrate 110 and finally transmitted to the outside of the power module 100.
[0095] The second solder layer 138 is arranged between the interconnection layer 136 of the interconnection assembly 130 and the terminal 140 to solder the terminal 140 and the interconnection layer 136, so as to ensure the stable connection between the terminal 140 and the interconnection layer 136, and ensure that a complete circuit can be formed between the terminal 140 and the interconnection layer 136, and the current can be introduced into the interconnection layer 136 from the terminal 140.
[0096] Specifically, the first solder layer 134 and the second solder layer 138 can be formed by solder paste reflow soldering.
[0097] Specifically, as shown in Figure 1 , from the top of the power module 100 to the bottom of the power module 100, the interconnection assembly 130 is in turn the terminal 140, the second solder layer 138, the interconnection layer 136, the chip 132 and the first solder layer 134.
[0098] As shown in Figure 2 , Figure 5 , Figure 6 , Figure 8 and Figure 9 , in one embodiment of the present application, a thread 142 is arranged on the outer periphery of the terminal 140, and the thread 142 is used for cooperating with a nut or a screw; or the terminal 140 is provided with an inner hole 144, and a thread 142 is arranged on the inner wall of the inner hole 144, and the thread 142 is used for cooperating with a nut or a screw.
[0099] In this embodiment, on the one hand, as shown in Figure 5 and Figure 6 , a thread 142 is arranged on the outer periphery of the terminal 140 of the interconnection assembly 130, and the thread 142 is used for cooperating with a nut or a screw to achieve fastening connection with the terminal structure of the external circuit.
[0100] On the other hand, as shown in Figure 8 and Figure 9 , the terminal 140 of the interconnection assembly 130 is provided with an inner hole 144, and a thread 142 is arranged on the inner wall of the inner hole 144, and the thread 142 is used for cooperating with a nut or a screw to achieve fastening connection with the terminal structure of the external circuit.
[0101] Specifically, the size and shape of the terminal 140 can be designed according to the current size and actual connection requirements.
[0102] Specifically, the terminal 140 includes a base and a connecting column, the base of the terminal 140 is arranged on the interconnection layer 136, and the connecting column of the terminal 140 is provided with threads 142 on the outer periphery or is provided with an inner hole 144, and the threads 142 are arranged on the inner wall of the inner hole 144.
[0103] As shown in Figure 1 , Figure 2 , Figure 3 and Figure 4 , in one embodiment of the present application, the power module 100 further comprises: a plastic package 160 connected with the first working surface 112 and the peripheral side of the substrate 110, and covering the interconnection assembly 130.
[0104] In this embodiment, the power module 100 further comprises the plastic package 160, which is specifically connected with the first working surface 112 and the peripheral side of the substrate 110, and covers the interconnection assembly 130, thereby protecting the interconnection assembly 130 and improving the service life of the power module 100.
[0105] As shown in Figure 1 and Figure 7 , in one embodiment of the present application, the power module 100 further comprises: a protruding part 168 arranged on the plastic package 160; a groove 116 is arranged on the substrate 110, and the opening 124 of the groove 116 is located on the first working surface 112, and the protruding part 168 can be inserted into the groove 116 and abut against the side wall of the groove 116.
[0106] In this embodiment, the power module 100 further comprises the protruding part 168, which is specifically arranged on the plastic package 160. The groove 116 is arranged on the substrate 110, and the opening 124 of the groove 116 is located on the first working surface 112, and the protruding part 168 can be inserted into the groove 116 and abut against the side wall of the groove 116. Through the cooperation of the protruding part 168 and the groove 116, the plastic package 160 is clamped on the substrate 110, and the firmness of the connection between the two is improved.
[0107] Specifically, as shown in Figure 13 and Figure 15 , the number of the protruding part 168 is two, and the two protruding parts 168 are arranged on the same face of the plastic package 160, and one protruding part 168 is close to one side of the face, and the other protruding part 168 is close to the other side of the face. The number of the groove 116 arranged on the substrate 110 is two, and the two grooves 116 are located at opposite ends of the substrate 110. When connected, the two protruding parts 168 are simultaneously inserted into the two grooves 116, thereby further improving the firmness of the connection between the two.
[0108] Further, the protruding portion 168 and the plastic sealing body 160 are in an integral structure, thereby improving the structural strength of the two.
[0109] As shown in the drawings, in an embodiment of the present application, the plastic sealing body 160 is provided with a plurality of accommodating grooves 164, one accommodating groove 164 corresponding to one protruding block 150, for accommodating the protruding block 150. Figure 1
[0110] In this embodiment, the plastic sealing body 160 is also provided with a plurality of accommodating grooves 164, one accommodating groove 164 corresponding to one protruding block 150 in position, the accommodating grooves 164 being used for accommodating the protruding blocks 150, and the substrate 110 being provided with a plurality of protruding blocks 150 corresponding to being inserted into different accommodating grooves 164 when the plastic sealing body 160 is connected to the first working surface 112 of the substrate 110 and the circumferential side of the substrate 110 and covers the interconnection assembly 130.
[0111] Through the provision of the plurality of accommodating grooves 164 provided on the plastic sealing body 160, on the one hand, the protruding blocks 150 provided on the substrate 110 can be accommodated, improving the appearance neatness of the power module 100, and on the other hand, the plastic sealing body 160 can be further clamped on the substrate 110 by means of the mutual cooperation of the accommodating grooves 164 and the protruding blocks 150, improving the connection stability of the two.
[0112] As shown in the drawings, in an embodiment of the present application, the plastic sealing body 160 is also provided with a plurality of connecting holes 162, the connecting holes 162 being used for allowing the terminals 140 to pass through. Figure 1 In this embodiment, the plastic sealing body 160 is also provided with connecting holes 162, the connecting holes 162 being used for allowing the terminals 140 of the interconnection assembly 130 to pass through, and through the provision of the connecting holes 162, the terminals 140 can be avoided from being shielded after the plastic sealing body 160 covers the interconnection assembly 130, thereby conveniently allowing the terminal structure of the external circuit to be connected to the terminals 140 of the interconnection assembly 130, and smoothly realizing the import of external current.
[0113] As shown in the drawings, in an embodiment of the present application, the substrate 110 further comprises a second working surface 114, the second working surface 114 being opposite to the first working surface 112 on the substrate 110, and the power module 100 further comprises: a plurality of mounting holes 118, the plurality of mounting holes 118 being spaced apart and provided on the substrate 110, the orifices of the plurality of mounting holes 118 being located on the second working surface 114, and the plurality of mounting holes 118 being used for allowing external packaging bodies to be mounted.
[0114] Figure 7
[0115] In this embodiment, the substrate 110 further comprises a second working surface 114 opposite to the first working surface 112, and the power module 100 further comprises a plurality of mounting holes 118 spaced apart on the substrate 110, the orifices of the plurality of mounting holes 118 being located on the second working surface 114, and the plurality of mounting holes 118 are specifically hole structures for mounting the external package, when the external package is mounted, the external package can be opposite to the substrate 110, and then the external package is connected by screws or other connecting members and then inserted into the mounting holes 118, so that the external package is mounted on the substrate 110.
[0116] By providing the plurality of mounting holes 118 on the second working surface 114 of the substrate 110, the operation difficulty of mounting the external package on the substrate 110 is reduced, and the stability of the external package after being connected with the substrate 110 is improved.
[0117] Specifically, the mounting holes 118 are used for mounting the external package, and the external package can specifically include a heat sink.
[0118] Specifically, the mounting holes 118 are through holes, that is, the mounting holes 118 penetrate through the second working surface 114 and the first working surface 112 of the substrate 110.
[0119] Further, the mounting holes 118 specifically include a first hole 120 and a second hole 122, the diameter of the second hole 122 is different from that of the first hole 120, so that the mounting holes 118 can be suitable for mounting external packages of various sizes.
[0120] Specifically, the number of the first holes 120 is two, and the number of the second hole 122 is one, and the second hole 122 is located between the two first holes 120.
[0121] Further, as shown in Figure 13 、 Figure 14 、 Figure 15 and Figure 16 , the plastic package 160 is provided with a third hole 170 and a fourth hole 172, the diameter of the third hole 170 is equal to that of the first hole 120, and the diameter of the fourth hole 172 is equal to that of the second hole 122, when the plastic package 160 is clamped on the substrate 110, the axis of the third hole 170 coincides with the axis of the first hole 120, and the axis of the fourth hole 172 coincides with the axis of the second hole 122.
[0122] The third hole 170 and the fourth hole 172 can also be used for mounting the external package, and when mounting, a component such as a screw for assisting in mounting the external package can pass through the third hole 170 after passing through the first hole 120, or pass through the fourth hole 172 after passing through the second hole 122, and the screw is inserted into the two-part hole structure at the same time, thereby having a longer insertion distance, improving the stability of the external package after mounting.
[0123] As shown in Figure 17 and Figure 18 For the steps of preparing the power module 100 proposed in the present application, specifically, first, according to the target size of the substrate 110 and the bump 150, the whole plate 200 is hollowed out and engraved to form a plurality of substrates 110 connected to each other through the bump 150 on the whole plate 200.
[0124] Each substrate 110 on the whole plate 200 is drilled and engraved to form a groove 116 on each substrate 110.
[0125] Each substrate 110 on the whole plate 200 is drilled and engraved to form a plurality of mounting holes 118 on each substrate 110.
[0126] The welding process of the interconnection assembly 130 and the substrate 110 is carried out, specifically, first, the plurality of chips 132 of the interconnection assembly 130 are connected to the first working surface 112 of the substrate 110 through the first solder layer 134 formed by solder paste reflow welding, forming a first intermediate structure.
[0127] Then, the first intermediate structure is subjected to a first injection curing process to form an insulating layer 180 having a plurality of avoiding openings on the first working surface 112, wherein the avoiding openings correspond to the side of the chip 132 away from the first working surface 112.
[0128] After the first injection curing process, sputtering and electroplating, sintering metal or filling conductive material are carried out on the insulating layer 180 and in the avoiding openings to form an interconnection layer 136 connecting the interconnection assembly 130 of the plurality of chips 132, obtaining a second intermediate structure.
[0129] Then, the second intermediate structure is subjected to a second injection curing process to form a plastic package 160 having a connecting hole 162 on the substrate 110, wherein the aperture of the connecting hole 162 corresponds to the side of the interconnection layer 136 away from the chip 132;
[0130] An injection curing agent is introduced into the groove 116 to form a protruding portion on the plastic package 160 abutting against the side wall of the groove 116.
[0131] The solder paste is filled into the connecting holes 162, and the second solder layer 138 formed by reflow soldering of the solder paste connects the terminals 140 of the interconnection assembly 130 to the interconnection layer 136, and the soldering of the interconnection assembly 130 to the substrate 110 is completed.
[0132] The bumps 150 arranged on the completed soldered substrate 110 are separated from the bumps 150 arranged on the adjacent substrate 110, and a plurality of power modules 100 are obtained.
[0133] In the preparation, the plurality of substrates 110 are indirectly connected to each other through the connection between the bumps 150, the substrates 110 are arranged in order, and the plurality of substrates 110 can be simultaneously soldered and packaged, the interconnection assembly 130 is soldered on the substrate 110, the simultaneous processing of the plurality of power modules 100 is realized, and the preparation efficiency of the power module 100 is improved.
[0134] When the power module 100 is in a completed preparation state, the bumps 150 arranged on the substrate 110 of the completed power module 100 can be separated from the bumps 150 arranged on the substrate 110 of another power module 100, and a plurality of independent power modules 100 are obtained, the separation is performed on the bumps 150, the substrate 110 is not damaged, and the safety of the substrate 110 is ensured.
[0135] Specifically, the separation of the bumps 150 arranged on the substrate 110 of the completed power module 100 from the bumps 150 arranged on the substrate 110 of another power module 100 is specifically cutting the connection position of the two bumps 150.
[0136] As shown in Figure 19 FIG. 1 shows a flowchart of a preparation method of a power module according to an embodiment of the present application, and the preparation method of the power module comprises the following steps.
[0137] S302: According to the target size of the substrate and the bump, the whole plate is hollowed out and engraved to form a plurality of substrates connected to each other through the bumps on the whole plate;
[0138] S304: Soldering an interconnection assembly on each substrate;
[0139] S306: Separating the bumps arranged on the completed substrate from the bumps arranged on the adjacent substrate, and obtaining a plurality of power modules.
[0140] In this embodiment, the method for fabricating the power module proposed in this invention specifically includes: First, according to the target dimensions of the substrate and bumps, the entire board is hollowed out and engraved to form multiple substrates interconnected by bumps on the entire board. Then, interconnect components are soldered on each substrate. Through the connection between the bumps, the substrates of multiple power modules are indirectly connected together. The substrates are arranged neatly, and multiple substrates can be soldered and packaged at the same time. By simultaneously soldering interconnect components on multiple substrates, multiple power modules can be processed and formed at the same time, which improves the fabrication efficiency of the power module.
[0141] Next, the bumps on the soldered substrate are separated from the bumps on adjacent substrates to obtain multiple power modules. When the power modules are in the completed state, the bumps on the substrate of the completed power module can be separated from the bumps on the substrate of another power module to obtain multiple independent power modules. Since the separation is performed on the bumps, damage to the substrate is avoided, ensuring the safety of the substrate.
[0142] like Figure 20 The diagram illustrates a second flow chart of a method for fabricating a power module according to an embodiment of the present invention. The method for fabricating the power module includes:
[0143] S402: According to the target dimensions of the substrate and bumps, the entire board is cut out to form multiple substrates that are interconnected by bumps on the entire board.
[0144] S404: A first solder layer, formed by reflow soldering multiple chips of interconnect components, is connected to the first working surface of the substrate to form a first intermediate structure.
[0145] S406: The avoidance chip performs a first injection molding and curing of the first intermediate structure to form an insulating layer with multiple avoidance openings on the first working surface;
[0146] S408: Sputtering and electroplating, sintering metal or filling conductive material are performed on the insulating layer and inside the clearance opening to form an interconnect layer for interconnecting components that connect multiple chips, thus obtaining a second intermediate structure;
[0147] S410: The interconnect layer is bypassed to perform a second injection molding and curing of the second intermediate structure to form a molded body with interconnect holes on the substrate;
[0148] S412: Fill the connection hole with solder paste, and the second solder layer formed by the reflow solder paste connects the terminals of the interconnect component to the interconnect layer, thus completing the soldering of the interconnect component to the substrate;
[0149] S414: Separate the bumps on the completed soldering substrate from the bumps on the adjacent substrate to obtain multiple power modules.
[0150] In this embodiment, a specific process of welding the interconnection assembly on the substrate is defined. First, the plurality of chips of the interconnection assembly are connected to the first working surface of the substrate by reflow soldering of the solder paste to form a first solder layer, forming a first intermediate structure. The plurality of chips are connected to the substrate by welding, thereby ensuring stable connection between the chips and the first working surface of the substrate, and ensuring that a complete circuit can be formed between the chips and the substrate, and that current can be introduced into the substrate and ultimately transmitted to the outside of the power module.
[0151] After obtaining the first intermediate structure, the first intermediate structure is subjected to first injection curing to form an insulating layer having a plurality of avoiding openings on the first working surface, wherein the avoiding openings correspond to the side of the chips away from the first working surface. By preparing the first injection curing of the first intermediate structure by avoiding the chips, an insulating layer can be formed on the first working surface, so that only the current processed by the chips can flow into the substrate, and damage or contamination to the upper surface of the chips can be avoided.
[0152] After completing the first injection curing, on the one hand, sputtering and electroplating are performed on the insulating layer and in the avoiding openings to form an interconnection layer of the interconnection assembly connecting the plurality of chips, obtaining a second intermediate structure. The interconnection layer obtained by sputtering and electroplating can more easily adjust the pattern shape of the interconnection layer, so that the interconnection layer can be suitable for the chips and meet the electrical interconnection requirements between the plurality of chips.
[0153] On the other hand, after completing the first injection curing, sintering metal can also be performed on the insulating layer and in the avoiding openings to form an interconnection layer of the interconnection assembly connecting the plurality of chips. Specifically, the metal that can be used for sintering includes nano-silver or nano-copper, etc. On the other hand, conductive material can also be filled in the insulating layer and in the avoiding openings to form an interconnection layer of the interconnection assembly connecting the plurality of chips to meet the electrical interconnection requirements between the plurality of chips. Specifically, the conductive material includes solder paste, conductive adhesive or graphene, etc.
[0154] After obtaining the second intermediate structure, the second intermediate structure is subjected to second injection curing by avoiding the interconnection layer to form a plastic package having a connecting hole on the substrate, wherein the opening of the connecting hole corresponds to the side of the interconnection layer away from the chips. The plastic package is formed on the substrate and the interconnection assembly to protect the substrate and the interconnection assembly.
[0155] The solder paste is filled into the connecting hole, and the second solder layer formed by reflow soldering of the solder paste connects the terminals of the interconnection assembly to the interconnection layer, completing the welding of the interconnection assembly and the substrate.
[0156] The terminal is connected with the interconnection layer by welding, so that the stable connection between the terminal and the interconnection layer is ensured, and the complete circuit between the terminal and the interconnection layer can be formed, and the current can be smoothly introduced into the interconnection layer from the terminal.
[0157] As shown in Figure 21 Fig. 1 shows a flowchart of a method for manufacturing a power module according to an embodiment of the present application, and the method for manufacturing the power module comprises the following steps.
[0158] S502: According to the target size of the substrate and the bump, the whole plate is hollowed out and engraved to form a plurality of substrates connected to each other by the bumps on the whole plate;
[0159] S504: Each substrate is drilled and engraved to form a groove on each substrate;
[0160] S506: The plurality of chips of the interconnection assembly are connected to the first working surface of the substrate by the first solder layer formed by reflow soldering of the solder paste, to form a first intermediate structure;
[0161] S508: The first intermediate structure is subjected to first injection curing to form an insulating layer having a plurality of avoiding openings on the first working surface, avoiding the chips;
[0162] S510: Sputtering and electroplating, sintering metal or filling conductive material are performed on the insulating layer and in the avoiding openings to form an interconnection layer of the interconnection assembly connecting the plurality of chips, to obtain a second intermediate structure;
[0163] S512: The second intermediate structure is subjected to second injection curing to form a plastic package having a connecting hole on the substrate, avoiding the interconnection layer;
[0164] S514: The injection curing agent is introduced into the groove to form a protruding portion on the plastic package abutting against the side wall of the groove;
[0165] S516: The solder paste is filled into the connecting hole, and the second solder layer formed by reflow soldering of the solder paste is used to connect the terminal of the interconnection assembly to the interconnection layer, to complete the welding of the interconnection assembly and the substrate;
[0166] S518: The bump provided on the substrate after the welding is completed is separated from the bump provided on the adjacent substrate, to obtain a plurality of power modules.
[0167] In this embodiment, before the step of welding the interconnection assembly on each substrate, the method for manufacturing the power module according to the present application further comprises drilling and engraving each substrate to form a groove on each substrate, and the groove opening is specifically located on the first working surface of the substrate.
[0168] After the step of avoiding the interconnection layer to secondly injection-mold and cure the second intermediate structure to form the plastic package with the connecting hole on the substrate, the preparation method of the power module further comprises: introducing the injection-mold curing agent into the groove to form the protruding part abutting against the side wall of the groove on the plastic package, and through the cooperation of the protruding part and the groove, the plastic package is clamped on the substrate, and the firmness of the connection between the two is improved.
[0169] Further, before the step of welding the interconnection assembly on each substrate, the preparation method of the power module further comprises: drilling and carving each substrate to form the mounting hole on each substrate, and the mounting hole is used for mounting the external package.
[0170] In the present application, the term "a plurality of" refers to two or more, unless otherwise explicitly limited. The terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, "connecting" can be fixed connection, or detachable connection, or integrally connected; "connecting" can be directly connected, or indirectly connected through an intermediate medium. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0171] In the description of the present application, the terms "one embodiment", "some embodiments", "a specific embodiment" and the like are intended to mean that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the present application, the illustrative description of the above terms does not necessarily mean the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
[0172] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.
Claims
1. A power module, characterized by The power module comprises: a substrate; an interconnection assembly arranged on a first working surface of the substrate and electrically connected with the substrate, for receiving an external current and performing power adjustment on the external current; a plurality of protrusions, some of the protrusions being arranged on a side surface of the substrate along a length direction of the substrate, and the other protrusions being arranged on the side surface of the substrate along a width direction of the substrate, the protrusions being capable of being connected with or separated from protrusions arranged on a substrate of another power module; the interconnection assembly comprises: a plurality of chips arranged on the first working surface, for performing the power adjustment on the external current; an interconnection layer connected with the plurality of chips, for interconnecting the plurality of chips; a terminal connected with the interconnection layer, the terminal being used for receiving the external current and leading the external current into the interconnection layer; the power module further comprises: a plastic encapsulation connected with the first working surface and a peripheral side of the substrate and covering the interconnection assembly; the power module further comprises: a protruding part arranged on the plastic encapsulation; a recess is formed in the substrate, an opening of the recess is located on the first working surface, and the protruding part is capable of being inserted into the recess and abutting against a side wall of the recess; a plurality of accommodating grooves are formed in the plastic encapsulation, one of the accommodating grooves corresponds to one of the protrusions, and the accommodating grooves are used for accommodating the protrusions; a screw thread is arranged on an outer periphery of the terminal, and the screw thread is used for cooperating with a nut or a screw; or an inner hole is formed in the terminal, a screw thread is arranged on an inner wall of the inner hole, and the screw thread is used for cooperating with a nut or a screw.
2. The power module of claim 1, wherein, the interconnection layer comprises: a metal conductive pattern layer, a pattern of the metal conductive pattern layer corresponds to the plurality of chips.
3. The power module of claim 1, wherein, the interconnection assembly further comprises: a first solder layer arranged between the plurality of chips and the first working surface, so as to solder the plurality of chips and the first working surface; a second solder layer arranged between the interconnection layer and the terminal, so as to solder the terminal and the interconnection layer.
4. A method of manufacturing a power module, characterized by, A method for manufacturing the power module as claimed in any one of claims 1 to 3, the method comprising: according to target sizes of the substrate and the protrusions, hollow carving is performed on a whole plate, so as to form a plurality of substrates connected with each other through the protrusions on the whole plate; soldering the interconnection assembly on each of the substrates; separating the protrusions arranged on the substrate after the soldering from the protrusions arranged on an adjacent substrate, so as to obtain a plurality of the power modules.
5. The method of producing a power module according to claim 4, characterized by, the step of soldering the interconnection assembly on each of the substrates specifically comprises: connecting the plurality of chips of the interconnection assembly and the first working surface of the substrate through a first solder layer formed by reflow soldering of a solder paste, so as to form a first intermediate structure; performing first injection molding solidification on the first intermediate structure in avoidance of the chips, so as to form an insulating layer with a plurality of avoidance openings on the first working surface, wherein the avoidance openings correspond to sides of the chips away from the first working surface; sputtering and electroplating, sintering metal or filling conductive material on and in the insulation layer to form an interconnection layer of the interconnection assembly connecting the plurality of chips, to obtain a second intermediate structure; avoiding the interconnection layer to perform second injection curing on the second intermediate structure to form a plastic package with connecting holes on the substrate, wherein the orifices of the connecting holes correspond to the side of the interconnection layer away from the chips; filling the connecting holes with solder paste, and connecting the terminals of the interconnection assembly to the interconnection layer by reflow soldering of the second solder layer formed by solder paste, to complete the welding of the interconnection assembly and the substrate.
6. The method of producing a power module according to claim 5, wherein Before the step of welding the interconnection assembly on each of the substrates, the preparation method further comprises: drilling and carving each substrate to form a groove on each of the substrates; After the step of avoiding the interconnection layer to perform second injection curing on the second intermediate structure to form a plastic package with connecting holes on the substrate, the preparation method further comprises: introducing an injection curing agent into the groove to form a protruding part on the plastic package abutting against the side wall of the groove.
Citation Information
Patent Citations
Semiconductor package substrate structure and encapsulation method thereof
CN101231976A
Multi-tower diode module and preparing method thereof
CN106783761A
Power module
CN220106489U
Bga-type semiconductor device board and manufacture of bga-type semiconductor device
JP1996064718A