A plasma ignition device, a semiconductor thin film device, and an ignition control method

Abstract

This application provides a plasma ignition device, a semiconductor thin film apparatus, and an ignition control method, relating to the field of electronic technology. The plasma ignition device includes: a radio frequency (RF) power supply, an adjustment device, an RF matching unit, a plasma processing unit, a control unit, and a detection unit. The RF power supply is connected to the RF matching unit via the adjustment device. The RF matching unit is also connected to the upper electrode of the plasma processing unit, and the lower electrode of the plasma processing unit is grounded. The detection unit is connected to the upper electrode of the plasma processing unit, and the control unit is connected to the detection unit. The control unit is also connected to the adjustment device. This reduces the plasma ignition time, improves the precision of the thin film process, and reduces particulate contamination.

Description

Technical Field

[0001] This invention relates to the field of electronic technology, and more specifically, to a plasma ignition device, a semiconductor thin film device, and an ignition control method. Background Technology

[0002] With the increasingly widespread application of plasma technology, it has been extensively used in thin-film processes. In thin-film processes, a suitable gas is selected as the etching gas, and an energy source, such as a radio frequency source, excites the gas in the chamber, causing it to transform from a gaseous state into a plasma state.

[0003] The film thickness in thin film processes is affected by the plasma ignition time, while the ignition time in liquid source processes is relatively slow, which can also cause particulate contamination. Summary of the Invention

[0004] The purpose of this invention is to address the shortcomings of the prior art by providing a plasma ignition device, a semiconductor thin film device, and an ignition control method to solve problems such as excessively long plasma ignition time in the prior art.

[0005] To achieve the above objectives, the technical solutions adopted in the embodiments of this application are as follows:

[0006] In a first aspect, embodiments of this application provide a plasma ignition device, which includes: a radio frequency power supply, an adjustment device, a radio frequency matching device, a plasma processing unit, a control unit, and a detection unit;

[0007] The radio frequency power supply is connected to the radio frequency matching device through the adjustment device. The radio frequency matching device is also connected to the upper electrode of the plasma processing unit, and the lower electrode of the plasma processing unit is grounded.

[0008] The detection unit is connected to the upper electrode of the plasma processing unit, the control unit is connected to the detection unit, and the control unit is also connected to the adjustment device.

[0009] Optionally, the regulating device includes: a voltage regulating module, the radio frequency power supply is connected to the radio frequency input terminal of the voltage regulating module, the radio frequency output terminal of the voltage regulating module is connected to the radio frequency matching unit, and the control terminal of the voltage regulating module is also connected to the control unit.

[0010] Optionally, the voltage regulation module includes: a multi-stage voltage regulation unit and an RF switch connected in series; the RF input terminal of the first-stage voltage regulation unit in the multi-stage voltage regulation unit is the RF input terminal of the voltage regulation module, so as to connect to the RF power supply; the RF output terminals of the multi-stage voltage regulation units are all connected to multiple first terminals of the RF switch, and the second terminal of the RF switch is the RF output terminal of the voltage regulation module, so as to connect to the RF matching unit;

[0011] The control terminal of the radio frequency switch is the control terminal of the voltage regulation module, and is connected to the control unit.

[0012] Optionally, each voltage regulation unit includes a first inductive device and a first capacitive device; wherein, one end of the first inductive device is the radio frequency input terminal of each voltage regulation unit, the other end of the first inductive device is the radio frequency output terminal of each voltage regulation unit, and the other end of the first inductive device is also grounded through the first capacitive device.

[0013] Optionally, the voltage regulation module includes: a primary voltage regulation unit, wherein the radio frequency (RF) input terminal of the primary voltage regulation unit is the RF input terminal of the voltage regulation module, and is connected to the RF power supply; and the RF output terminal of the primary voltage regulation unit is the RF output terminal of the voltage regulation module, and is connected to the upper electrode of the plasma processing unit.

[0014] The primary voltage regulation unit includes at least an adjustable device, wherein the adjustment terminal of the adjustable device is the control terminal of the voltage regulation module, and is connected to the control unit.

[0015] Optionally, the voltage regulation unit includes: a second inductive device and a second capacitive device; wherein, one end of the second inductive device is the radio frequency input terminal of the voltage regulation unit, the other end of the second inductive device is the radio frequency output terminal of the voltage regulation unit, and the other end of the second inductive device is also grounded through the second capacitive device;

[0016] At least one of the second inductive device and the second capacitive device is an adjustable device.

[0017] Optionally, the radio frequency matching device is connected to the upper electrode of the plasma processing unit via a preset conductive metal device.

[0018] Optionally, the preset conductive metal device is disposed within a preset shield between the radio frequency matching unit and the plasma processing unit.

[0019] Optionally, the detection unit is a voltage detection probe, and the probe contact of the voltage detection probe is set at a preset position close to the upper electrode of the plasma processing unit to connect to the upper electrode of the plasma processing unit.

[0020] In a second aspect, embodiments of this application provide a semiconductor thin film device, including: any of the plasma ignition devices described in the first aspect above.

[0021] Thirdly, embodiments of this application provide a plasma ignition control method, applied to a control unit in any of the plasma ignition devices described in the first aspect above, the method comprising:

[0022] Obtain the detection voltage of the upper electrode of the plasma processing unit;

[0023] The target adjustment parameter is determined based on the correspondence between the detected voltage and the preset voltage and adjustment parameters;

[0024] According to the target adjustment parameters, the control adjustment device adjusts the voltage of the radio frequency power supply output to the upper electrode of the plasma processing unit through the radio frequency matching device.

[0025] Optionally, if the regulating device includes: a multi-stage voltage regulating unit and a radio frequency switch connected in series, then the correspondence between the voltage and the regulating parameters is: the correspondence between the voltage and the number of stages;

[0026] The step of determining the target adjustment parameter based on the correspondence between the detected voltage and the preset voltage and adjustment parameters includes:

[0027] Based on the correspondence between the detected voltage and the voltage and the number of stages, the target number of stages is determined, and the target adjustment parameter is the target number of stages;

[0028] The step of controlling the adjustment device to adjust the voltage of the radio frequency power supply output to the upper electrode of the plasma processing unit through the radio frequency matching unit according to the target adjustment parameters includes:

[0029] According to the target level, the radio frequency switch is controlled to turn on the voltage regulation unit of the target level in order to regulate the voltage of the upper electrode.

[0030] Optionally, if the regulating device includes a first-stage voltage regulating unit, then the correspondence between the voltage and the regulating parameters is: the correspondence between the voltage and the circuit parameters;

[0031] The step of determining the target adjustment parameter based on the correspondence between the detected voltage and the preset voltage and adjustment parameters includes:

[0032] Based on the correspondence between the detected voltage and the voltage and circuit parameters, the target circuit parameters are determined, and the target adjustment parameters are the target circuit parameters.

[0033] The step of controlling the adjustment device to adjust the voltage of the radio frequency power supply output to the upper electrode of the plasma processing unit through the radio frequency matching unit according to the target adjustment parameters includes:

[0034] Based on the target circuit parameters, the circuit parameters of the first-stage voltage regulation unit are controlled to be the target circuit parameters in order to regulate the voltage of the upper electrode.

[0035] Compared with the prior art, this application has the following beneficial effects:

[0036] This application provides a plasma ignition device, a semiconductor thin film apparatus, and an ignition control method. The plasma ignition device includes: a radio frequency (RF) power supply, an adjustment device, an RF matching unit, a plasma processing unit, a control unit, and a detection unit. The RF power supply is connected to the RF matching unit via the adjustment device. The RF matching unit is also connected to the upper electrode of the plasma processing unit, and the lower electrode of the plasma processing unit is grounded. The detection unit is connected to the upper electrode of the plasma processing unit, and the control unit is connected to the detection unit. The control unit is also connected to the adjustment device. This reduces the plasma ignition time, improves the precision of the thin film process, and reduces particulate contamination. Attached Figure Description

[0037] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0038] Figure 1 This application provides a schematic diagram of the structure of a plasma ignition device.

[0039] Figure 2 This is a schematic diagram of the structure of a voltage regulation module provided in an embodiment of this application;

[0040] Figure 3 This is a schematic diagram of the structure of a voltage regulation unit provided in an embodiment of this application;

[0041] Figure 4 This is a schematic diagram of another voltage regulation unit provided in an embodiment of this application;

[0042] Figure 5 An equivalent circuit diagram of a plasma ignition device provided in this application embodiment;

[0043] Figure 6 A schematic flowchart of a plasma ignition control method provided in this application;

[0044] Figure 7 A schematic flowchart of another plasma ignition control method provided in this application;

[0045] Figure 8 A schematic flowchart of another plasma ignition control method provided in this application;

[0046] Figure 9 A schematic diagram of a plasma ignition control device provided in an embodiment of this application;

[0047] Figure 10 This is a schematic diagram of a control device provided in an embodiment of this application.

[0048] Icons: 1-RF power supply, 2-Regulation device, 3-RF matching unit, 4-Plasma processing unit, 5-Control unit, 6-Detection unit, 21-Voltage regulation unit, 22-RF switch, 221-First inductive device, 222-First capacitive device, 223-Second inductive device, 224-Second capacitive device, VG-First power supply, L1-First inductor, C1-First capacitor, C2-Second capacitor, C3-Third capacitor, L2-Second inductor, C4-Fourth capacitor, L3-Third inductor, R1-First resistor, 901-Acquisition module, 902-Determination module, 903-Control module, 1001-Processor, 1002-Storage medium. Detailed Implementation

[0049] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0050] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0051] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0052] Furthermore, the terms "first" and "second" are used only to distinguish descriptions and should not be interpreted as indicating or implying relative importance.

[0053] It should be noted that, where there is no conflict, the features in the embodiments of the present invention can be combined with each other.

[0054] To reduce the ignition time of plasma, this application provides a plasma ignition device, a semiconductor thin film device, and an ignition control method.

[0055] The plasma ignition device provided in this application will be explained and illustrated below with specific examples. Figure 1 This application provides a schematic diagram of the structure of a plasma ignition device. The plasma ignition device includes: a radio frequency power supply 1, an adjustment device 2, a radio frequency matching device 3, a plasma processing unit 4, a control unit 5, and a detection unit 6.

[0056] The radio frequency power supply 1 is connected to the radio frequency matching device 3 through the adjustment device 2. The radio frequency matching device 3 is also connected to the upper electrode of the plasma processing unit 4, and the lower electrode of the plasma processing unit 4 is grounded.

[0057] The detection unit 6 is connected to the upper electrode of the plasma processing unit 4, the control unit 5 is connected to the detection unit 6, and the control unit 5 is also connected to the adjustment device 2.

[0058] For example, the RF power supply 1 can be an RF generator that can generate a sinusoidal voltage at a fixed frequency.

[0059] The voltage output from the RF power supply 1 is applied to the upper electrode of the plasma processing unit 4 through the regulating device 2 and the RF matching device 3. As the voltage is applied, it breaks down the upper and lower electrodes of the plasma processing unit 4, igniting the plasma inside the cavity between the upper and lower electrodes. The RF matching device 3 is used to match the load impedance and the characteristic impedance of the transmission line, i.e., to match the regulated regulating device 2.

[0060] Different voltages result in different ignition times, and the shorter the ignition time, the thinner the film thickness in thin film processing, and the less particulate contamination.

[0061] The detection unit detects the voltage of the upper electrode of the plasma processing unit 4 and transmits the detected voltage to the control unit 5. The control unit 5 compares the detected voltage with the preset target voltage and controls the adjustment device 2 to adjust the voltage output by the radio frequency power supply 1 so that the voltage transmitted to the upper electrode of the plasma processing unit 4 reaches the preset target voltage.

[0062] When the RF power supply 1 is powered on, since the gas is not ignited, the impedance from the output of the RF power supply 1 to the input of the RF matching converter 3 does not reach the preset impedance, resulting in reflection and a standing wave along the entire RF transmission path. The adjustment device 2 positions the upper electrode of the plasma processing unit 4 at the antinode of the standing wave, allowing the voltage at the upper electrode of the plasma processing unit 4 to reach its theoretical maximum value. The preset impedance can be 50Ω.

[0063] The plasma processing unit 4 uses a preset target voltage for ignition, resulting in the shortest ignition time. This reduces the plasma ignition time, improves the precision of the thin film process, and reduces particulate contamination.

[0064] In summary, in this embodiment, the plasma ignition device includes: a radio frequency (RF) power supply, an adjustment device, an RF matching unit, a plasma processing unit, a control unit, and a detection unit. The RF power supply is connected to the RF matching unit via the adjustment device. The RF matching unit is also connected to the upper electrode of the plasma processing unit, and the lower electrode of the plasma processing unit is grounded. The detection unit is connected to the upper electrode of the plasma processing unit, and the control unit is connected to the detection unit. The control unit is also connected to the adjustment device. This reduces the plasma ignition time, improves the precision of thin film processing, and reduces particulate contamination.

[0065] In the above Figure 1 Based on the corresponding embodiments, the regulating device in this application includes a voltage regulating module.

[0066] The RF power supply 1 is connected to the RF input terminal of the voltage regulation module, the RF output terminal of the voltage regulation module is connected to the RF matching unit 3, and the control terminal of the voltage regulation module is also connected to the control unit 5.

[0067] The voltage regulation module has an adjustable impedance structure. The control unit 5 compares the detected voltage with the preset target voltage and controls the impedance value in the regulation device 2, so that the regulation device 2 adjusts the voltage output by the radio frequency power supply 1, so that the voltage transmitted to the upper electrode of the plasma processing unit 4 reaches the preset target voltage.

[0068] In summary, in this embodiment, the adjustment device includes: a voltage adjustment module, an RF power supply connected to the RF input terminal of the voltage adjustment module, an RF output terminal of the voltage adjustment module connected to the RF matching unit 3, and a control terminal of the voltage adjustment module also connected to the control unit. Thus, the voltage of the upper electrode of the plasma processing unit can be precisely adjusted through the voltage adjustment module.

[0069] Based on the above embodiments, this application also provides a voltage regulation module. Figure 2 This is a schematic diagram of a voltage regulation module provided in an embodiment of this application. Figure 2As shown, the voltage regulation module includes a multi-stage voltage regulation unit 21 and an RF switch 22 connected in series.

[0070] In the multi-stage voltage regulation unit 21, the RF input terminal of the first-stage voltage regulation unit 21 is the RF input terminal of the voltage regulation module, and is connected to the RF power supply 1; the RF output terminals of the multi-stage voltage regulation unit 21 are all connected to multiple first terminals of the RF switch 22, and the second terminal of the RF switch 22 is the RF output terminal of the voltage regulation module, and is connected to the RF matching unit 3.

[0071] The control terminal of the RF switch 22 is the control terminal of the voltage regulation module, which is connected to the control unit 5.

[0072] The control unit 5 compares the detected voltage with the preset target voltage and controls the RF switch 22 to achieve different conduction connections according to actual needs. This can change the number of stages of the voltage regulation unit 21 connected in series between the RF power supply 1 and the RF matching unit 3. Connecting voltage regulation units 21 with different stages in series changes the impedance value of the entire voltage regulation module, thereby changing the output voltage of the regulation device 2 and thus regulating the voltage of the upper electrode of the plasma processing unit 4.

[0073] For example, the RF switch 22 is a single-pole multi-throw switch; the single-pole multi-throw switch includes: multiple actuating contacts and one stationary contact. The actuating contact is the first terminal of the RF switch 22, and the stationary contact is the second terminal of the RF switch 22.

[0074] In summary, in this embodiment, the voltage regulation module includes: a multi-stage voltage regulation unit and an RF switch connected in series; the RF input terminal of the first-stage voltage regulation unit in the multi-stage voltage regulation unit is the RF input terminal of the voltage regulation module, connected to an RF power supply; the RF output terminals of the multi-stage voltage regulation units are all connected to multiple first terminals of the RF switch, and the second terminal of the RF switch is the RF output terminal of the voltage regulation module, connected to an RF matching unit; the control terminal of the RF switch is the control terminal of the voltage regulation module, connected to a control unit. Thus, by connecting the multi-stage voltage regulation unit and the RF switch in series, the voltage of the upper electrode of the plasma processing unit can be precisely adjusted.

[0075] In the above Figure 2 Based on the corresponding embodiments, this application also provides a voltage regulation unit. Figure 3 This is a schematic diagram of the structure of a voltage regulation unit provided in an embodiment of this application. Figure 3 As shown, each voltage regulation unit 21 includes a first inductive device 221 and a first capacitive device 222.

[0076] One end of the first inductive device 221 is the radio frequency input terminal of each stage voltage regulation unit 21, and the other end of the first inductive device 221 is the radio frequency output terminal of each stage voltage regulation unit 21. The other end of the first inductive device 221 is also grounded through the first capacitive device 222.

[0077] For example, the first inductive device 221 can be an inductor, and the first capacitive device 222 can be a capacitor. The first inductive device 221 and the first capacitive device 222 together form an LC circuit.

[0078] For example, the first inductive device 221 and the first capacitive device 222 in each voltage regulation unit 21 may have the same size or different sizes.

[0079] In summary, in this embodiment, each voltage regulation unit includes a first inductive device and a first capacitive device. One end of the first inductive device serves as the RF input terminal of each voltage regulation unit, and the other end serves as the RF output terminal. The other end of the first inductive device is also grounded through the first capacitive device. Thus, the impedance value of the voltage regulation module can be changed through the first inductive device and the first capacitive device.

[0080] Based on the above embodiments, this application also provides another voltage regulation module. In this alternative voltage regulation module, the voltage regulation module includes: a primary voltage regulation unit 21.

[0081] The RF input terminal of the first-stage voltage regulation unit 21 is the RF input terminal of the voltage regulation module, and is connected to the RF power supply 1; the RF output terminal of the first-stage voltage regulation unit 21 is the RF output terminal of the voltage regulation module, and is connected to the RF matching unit 3.

[0082] The primary voltage regulation unit 21 includes at least: an adjustable device, the adjustment terminal of which is the control terminal of the voltage regulation module, and is connected to the control unit 5.

[0083] Since the voltage regulation unit 21 includes an adjustable device that can adjust the impedance value of the voltage regulation module, the voltage regulation module only needs to have one voltage regulation unit 21.

[0084] The control unit 5 compares the detected voltage with the preset target voltage and controls the adjustable device in the voltage regulation module to change the impedance value of the voltage regulation module, so that the regulating device 2 adjusts the voltage output of the radio frequency power supply 1, so that the voltage transmitted to the upper electrode of the plasma processing unit 4 reaches the preset target voltage.

[0085] In summary, in this embodiment, the voltage regulation module includes: a primary voltage regulation unit, the RF input terminal of which is the RF input terminal of the voltage regulation module and is connected to an RF power supply; and an RF output terminal of which is the RF output terminal of the voltage regulation module and is connected to an RF matching circuit. The primary voltage regulation unit includes at least one adjustable device, the adjustment terminal of which is the control terminal of the voltage regulation module and is connected to a control unit. Therefore, by incorporating an adjustable device, the impedance value of the voltage regulation module can be adjusted while reducing the number of voltage regulation unit stages.

[0086] Based on the above embodiments, this application also provides another voltage regulation unit. Figure 4 This is a schematic diagram of another voltage regulation unit provided in an embodiment of this application. Figure 4 As shown, the voltage regulation unit 21 includes a second inductive device 223 and a second capacitive device 224.

[0087] One end of the second inductive device is the RF input terminal of the voltage regulation unit 21, and the other end of the second inductive device is the RF output terminal of the voltage regulation unit 21. The other end of the second inductive device is also grounded through the second capacitive device.

[0088] At least one of the second inductive device 223 and the second capacitive device 224 is an adjustable device.

[0089] By setting the second inductive device 223 and / or the second capacitive device 224 as adjustable devices, the impedance value of the voltage regulation module can be adjusted by adjusting the second inductive device 223 and / or the second capacitive device 224.

[0090] For example, the second inductive device 223 is an inductor, and the second capacitive device 224 is a capacitor.

[0091] In summary, in this embodiment, the voltage regulation unit includes a second inductive device and a second capacitive device; wherein one end of the second inductive device is the RF input terminal of the voltage regulation unit, the other end of the second inductive device is the RF output terminal of the voltage regulation unit, and the other end of the second inductive device is grounded through the second capacitive device; at least one of the second inductive device and the second capacitive device is an adjustable device. Therefore, the impedance value of the voltage regulation module can be adjusted by using the adjustable second inductive device and / or the second capacitive device.

[0092] Furthermore, in Figure 1 Based on the corresponding embodiment, the radio frequency matching device 3 is connected to the upper electrode of the plasma processing unit 4 through a preset conductive metal device.

[0093] For example, the default conductive metal component can be a copper strip. By using a copper strip, conductivity can be improved.

[0094] In summary, in this embodiment, the radio frequency matching device is connected to the upper electrode of the plasma processing unit via a pre-set conductive metal device, thereby improving conductivity.

[0095] Furthermore, based on the above embodiments, a pre-set conductive metal device is disposed within a pre-set shield between the radio frequency matching unit 3 and the plasma processing unit 4.

[0096] The pre-set shielding cover can shield against the effects of radio frequency electromagnetic fields.

[0097] In summary, in this embodiment, a pre-set conductive metal device is disposed within a pre-set shielding enclosure between the RF matching unit and the plasma processing unit. This shields against the influence of the RF electromagnetic field.

[0098] Based on any of the above embodiments, the detection unit is a voltage detection probe, and the probe of the voltage detection probe is set at a preset position close to the upper electrode of the plasma processing unit 4 to connect to the upper electrode of the plasma processing unit 4.

[0099] By setting the probe contact of the voltage detection probe to a preset position close to the upper electrode of the plasma processing unit 4, the probe of the voltage detection probe can detect the voltage of the upper electrode of the plasma processing unit.

[0100] In summary, in this embodiment, the detection unit is a voltage detection probe, and the probe contact of the voltage detection probe is positioned close to a preset position near the upper electrode of the plasma processing unit to connect to the upper electrode of the plasma processing unit. This improves the detection accuracy of the voltage at the upper electrode of the plasma processing unit.

[0101] Based on the above embodiments, this application also provides an equivalent circuit diagram of a plasma ignition device. Figure 5 An equivalent circuit diagram of a plasma ignition device provided in an embodiment of this application.

[0102] like Figure 5 As shown, the RF power supply 1 includes a first power supply VG, the adjustment device 2 includes a first inductor L1 and a first capacitor C1, the RF matching device 3 includes a second capacitor C2, a third capacitor C3 and a second inductor L2, and the plasma processing unit 4 includes a fourth capacitor C4, a third inductor L3 and a first resistor R1.

[0103] It should be noted that, Figure 5 Taking the first-stage voltage regulation unit 21 selected in the regulation device 2 as an example, the voltage regulation unit 21 includes a first inductive device 221 and a first capacitive device 222. Figure 5 Control unit 5 and detection unit 6 are not shown.

[0104] The first power supply VG is connected to one end of the first inductor L1, the other end of the first inductor L1 is connected to one end of the third capacitor C3, and the other end of the first inductor L1 is also grounded through the first capacitor C1.

[0105] One end of the third capacitor C3 is also grounded through the second capacitor C2. The other end of the third capacitor C3 is connected to one end of the second inductor L2. The other end of the second inductor L2 is connected to one end of the first resistor R1. The other end of the first resistor R1 is grounded.

[0106] One end of the first resistor R1 is connected to one end of the fourth capacitor C4, the other end of the fourth capacitor C4 is connected to one end of the third inductor L3, and the other end of the third inductor L3 is connected to the other end of the first resistor R1.

[0107] The second capacitor C2 and the third capacitor C3 can be adjustable capacitors. By adjusting the adjustable capacitors, the load impedance and the characteristic impedance of the transmission line are matched, that is, matched with the adjusted adjustment device 2.

[0108] The upper and lower electrodes of the plasma processing unit are equivalent to the upper and lower electrodes of the fourth capacitor C4.

[0109] Based on any of the above embodiments, this application also provides a semiconductor thin-film device, which includes: any of the plasma ignition devices in the above embodiments. That is, any of the plasma ignition devices in the above embodiments are integrated inside the semiconductor thin-film device.

[0110] The plasma ignition control method provided in this application will be explained and illustrated below with specific examples. Figure 6 This is a flowchart illustrating a plasma ignition control method provided in this application. The method is executed by an electronic device, which can be a device with computing processing capabilities, such as a desktop computer or laptop computer. This method is applied to the control unit in any of the plasma ignition devices described in the above embodiments. Figure 6 As shown, the method includes:

[0111] S101. Obtain the detection voltage of the upper electrode of the plasma processing unit.

[0112] The detection voltage of the upper electrode of the plasma processing unit is obtained through the detection unit.

[0113] S102. Determine the target adjustment parameter based on the correspondence between the detected voltage and the preset voltage and adjustment parameters.

[0114] Before adjustment, the correspondence between the preset voltage and the adjustment parameters is determined. Specifically, the adjustment devices in the plasma ignition device are adjusted one by one, and the detection voltage of the upper electrode of the plasma processing unit is detected by the detection unit. Through multiple adjustment tests, the correspondence between the voltage and the adjustment parameters is obtained.

[0115] If the detected voltage is less than the maximum voltage value in the preset correspondence, then the adjustment parameter corresponding to the maximum voltage value is determined as the target adjustment parameter.

[0116] If the detected voltage is greater than or equal to the maximum voltage value in the preset correspondence, no adjustment is required.

[0117] S103. Based on the target adjustment parameters, control the adjustment device to adjust the voltage of the radio frequency power supply output to the upper electrode of the plasma processing unit through the radio frequency matching device.

[0118] Based on the target adjustment parameters, the voltage of the upper electrode of the plasma processing unit is adjusted. Adjusting it to the optimal voltage reduces the plasma ignition time, improves the precision of thin film processing, and reduces particulate contamination.

[0119] In summary, in this embodiment, the detection voltage of the upper electrode of the plasma processing unit is obtained; the target adjustment parameter is determined based on the correspondence between the detection voltage and preset voltage and adjustment parameters; and the adjustment device is controlled to adjust the voltage output from the RF power supply to the upper electrode of the plasma processing unit through the RF matching unit according to the target adjustment parameter. This reduces the plasma ignition time, improves the precision of the thin film process, and reduces particulate contamination.

[0120] In the above Figure 6 Based on the corresponding embodiments, this application also provides another plasma ignition control method. Figure 7 A schematic flowchart of another plasma ignition control method provided in this application. Figure 7 As shown, if the regulating device includes a multi-stage voltage regulating unit and an RF switch connected in series, then the correspondence between voltage and regulating parameters is as follows: the correspondence between voltage and stage.

[0121] In S102, the target adjustment parameter is determined based on the correspondence between the detected voltage and the preset voltage and adjustment parameters, including:

[0122] S201. Based on the correspondence between the detection voltage and the voltage and the number of stages, determine the target number of stages. The target adjustment parameter is the target number of stages.

[0123] Before adjustment, the preset correspondence between voltage and stage number is determined. Specifically, the stage number of each voltage adjustment unit is adjusted one by one, and the detection voltage of the upper electrode of the plasma processing unit is detected by the detection unit. Through multiple adjustment tests, the correspondence between voltage and stage number is obtained.

[0124] For example, consider a first inductive device with an RF power output of 1W and a size of 250nH, and a first capacitive device with a size of 100pF. The correspondence between the voltage and the number of stages obtained from the adjustment test is shown in Table 1 below.

[0125]

[0126] P2023046CN1-PA23006527

[0127]

[0128] Table 1

[0129] As can be seen from Table 1, under this regulating device size, the adjustable voltage range of the nine-stage voltage regulating unit is one cycle. In other words, under this size, setting up a nine-stage voltage regulating unit is most suitable.

[0130] If the detected voltage is less than the maximum voltage value in the preset correspondence, then the level corresponding to the maximum voltage value is determined as the target level.

[0131] If the detected voltage is greater than or equal to the maximum voltage value in the preset correspondence, no adjustment is required.

[0132] Furthermore, in S103, based on the target adjustment parameters, the control adjustment device adjusts the voltage of the RF power supply output to the upper electrode of the plasma processing unit through the RF matching unit, including:

[0133] S202. Based on the target stage number, control the RF switch to turn on the voltage regulation unit of the target stage number to regulate the voltage of the upper electrode.

[0134] Based on the target stage, the RF switch is controlled to turn on the voltage regulation unit of the target stage, thereby regulating the voltage of the upper electrode of the plasma processing unit.

[0135] In summary, in this embodiment, the adjustment device includes: a multi-stage voltage adjustment unit and a radio frequency switch connected in series. The correspondence between voltage and adjustment parameters is as follows: voltage and stage number. The target stage number is determined based on the detected voltage and the correspondence between voltage and stage number; the target adjustment parameter is the target stage number. Based on the target stage number, the radio frequency switch is controlled to activate the voltage adjustment unit of the target stage number to adjust the voltage of the upper electrode. Therefore, through the multi-stage voltage adjustment unit and the radio frequency switch, the voltage of the upper electrode of the plasma processing unit is adjusted, thereby reducing the plasma ignition time, improving the precision of the thin film process, and reducing particulate contamination.

[0136] In the above Figure 6 Based on the corresponding embodiments, this application also provides another plasma ignition control method. Figure 8 This is a schematic flowchart illustrating another plasma ignition control method provided in this application. Figure 8 As shown, if the regulating device includes a first-stage voltage regulating unit, then the correspondence between voltage and regulating parameters is as follows: the correspondence between voltage and circuit parameters.

[0137] In S102, the target adjustment parameter is determined based on the correspondence between the detected voltage and the preset voltage and adjustment parameters, including:

[0138] S301. Based on the correspondence between the detected voltage and the voltage and circuit parameters, determine the target circuit parameters. The target adjustment parameters are the target circuit parameters.

[0139] Before adjustment, the preset correspondence between voltage and circuit parameters is determined. Specifically, the circuit parameters of the voltage adjustment unit are adjusted one by one, and the detection voltage of the upper electrode of the plasma processing unit is detected by the detection unit. Through multiple adjustment tests, the correspondence between voltage and circuit parameters is obtained.

[0140] For example, the circuit parameter is the impedance value of the voltage regulation unit.

[0141] If the detected voltage is less than the maximum voltage value in the preset correspondence, then the circuit parameter corresponding to the maximum voltage value is determined as the target circuit parameter.

[0142] If the detected voltage is greater than or equal to the maximum voltage value in the preset correspondence, no adjustment is required.

[0143] Furthermore, in S103, based on the target adjustment parameters, the control adjustment device adjusts the voltage of the RF power supply output to the upper electrode of the plasma processing unit through the RF matching unit, including:

[0144] S302. Based on the target circuit parameters, control the circuit parameters of the first-stage voltage regulation unit to be the target circuit parameters, so as to regulate the voltage of the upper electrode.

[0145] Based on the standard circuit parameters, the circuit parameters of the first-stage voltage regulation unit are used as the target circuit parameters to adjust the voltage of the upper electrode of the plasma processing unit.

[0146] In summary, in this embodiment, if the adjustment device includes a primary voltage adjustment unit, the correspondence between voltage and adjustment parameters is as follows: the correspondence between voltage and circuit parameters. Based on the detected voltage and the correspondence between voltage and circuit parameters, target circuit parameters are determined, where the target circuit parameter is the target level. Based on the target circuit parameters, the circuit parameters of the primary voltage adjustment unit are controlled to be the target circuit parameters to adjust the voltage of the upper electrode. Thus, by controlling the circuit parameters of the primary voltage adjustment unit, the voltage of the upper electrode of the plasma processing unit is adjusted, thereby reducing the plasma ignition time, improving the precision of the thin film process, and reducing particulate contamination.

[0147] The following describes a plasma ignition control device, equipment, and storage medium provided in this application for implementation. The specific implementation process and technical effects are described above and will not be repeated below.

[0148] Figure 9 This is a schematic diagram of a plasma ignition control device provided in an embodiment of this application, as shown below. Figure 9 As shown, the device includes:

[0149] The acquisition module 901 is used to acquire the detection voltage of the upper electrode of the plasma processing unit.

[0150] The determination module 902 is used to determine the target adjustment parameter based on the correspondence between the detected voltage and the preset voltage and adjustment parameters.

[0151] The control module 903 is used to control the adjustment device to adjust the voltage of the radio frequency power supply output to the upper electrode of the plasma processing unit through the radio frequency matching unit according to the target adjustment parameters.

[0152] Furthermore, module 902 is specifically used to determine the target level based on the correspondence between the detected voltage and the voltage and level, with the target adjustment parameter being the target level.

[0153] Furthermore, the control module 903 is specifically used to control the RF switch to turn on the voltage regulation unit of the target level according to the target level, so as to regulate the voltage of the upper electrode.

[0154] Furthermore, module 902 is specifically used to determine the target circuit parameters based on the correspondence between the detected voltage and the voltage and circuit parameters, wherein the target circuit parameters are the target level.

[0155] Furthermore, module 902 is specifically used to control the circuit parameters of the first-level voltage regulation unit to be the target circuit parameters, so as to regulate the voltage of the upper electrode.

[0156] Figure 10 This is a schematic diagram of a control device provided in an embodiment of this application. The control device may be a device with computing processing capabilities.

[0157] The control device includes a processor 1001 and a storage medium 1002. The processor 1001 and the storage medium 1002 are connected via a bus.

[0158] Storage medium 1002 is used to store programs, and processor 1001 calls the programs stored in storage medium 1002 to execute the above method embodiments. The specific implementation and technical effects are similar, and will not be described again here.

[0159] Optionally, the present invention also provides a storage medium including a program, which, when executed by a processor, is used to perform the above-described method embodiments. In the several embodiments provided by the present invention, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for example, the division of units is merely a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0160] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0161] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or in the form of hardware plus software functional units.

[0162] The integrated units implemented as software functional units described above can be stored in a storage medium. These software functional units, stored in a storage medium, include several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) or processor to execute some steps of the methods described in the various embodiments of the present invention. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, or optical disks.

Claims

1. A plasma ignition device, characterized in that, The plasma ignition device includes: a radio frequency power supply, an adjustment device, a radio frequency matching device, a plasma processing unit, a control unit, and a detection unit; The radio frequency power supply is connected to the radio frequency matching unit through the adjustment device. The radio frequency matching unit is also connected to the upper electrode of the plasma processing unit, and the lower electrode of the plasma processing unit is grounded. The adjustment device is used to adjust the voltage output by the radio frequency power supply when the radio frequency power supply is powered on, so that the upper electrode of the plasma processing unit is located at the antinode of the standing wave existing in the radio frequency transmission path, thereby making the voltage of the upper electrode of the plasma processing unit reach the theoretical maximum value. The detection unit is connected to the upper electrode of the plasma processing unit, the control unit is connected to the detection unit, and the control unit is also connected to the adjustment device; The regulating device includes: a voltage regulating module, the radio frequency power supply is connected to the radio frequency input terminal of the voltage regulating module, the radio frequency output terminal of the voltage regulating module is connected to the radio frequency matching unit, and the control terminal of the voltage regulating module is also connected to the control unit.

2. The plasma ignition device according to claim 1, characterized in that, The voltage regulation module includes: a multi-stage voltage regulation unit and an RF switch connected in series; the RF input terminal of the first-stage voltage regulation unit in the multi-stage voltage regulation unit is the RF input terminal of the voltage regulation module, so as to connect to the RF power supply; the RF output terminals of the multi-stage voltage regulation units are all connected to multiple first terminals of the RF switch, and the second terminal of the RF switch is the RF output terminal of the voltage regulation module, so as to connect to the RF matching unit. The control terminal of the radio frequency switch is the control terminal of the voltage regulation module, and is connected to the control unit.

3. The plasma ignition device according to claim 2, characterized in that, Each voltage regulation unit includes a first inductive device and a first capacitive device; wherein, one end of the first inductive device is the radio frequency input terminal of each voltage regulation unit, the other end of the first inductive device is the radio frequency output terminal of each voltage regulation unit, and the other end of the first inductive device is also grounded through the first capacitive device.

4. The plasma ignition device according to claim 1, characterized in that, The voltage regulation module includes: a primary voltage regulation unit, the radio frequency (RF) input terminal of which is the RF input terminal of the voltage regulation module and is connected to the RF power supply; and the RF output terminal of the primary voltage regulation unit is the RF output terminal of the voltage regulation module and is connected to the upper electrode of the plasma processing unit. The primary voltage regulation unit includes at least an adjustable device, wherein the adjustment terminal of the adjustable device is the control terminal of the voltage regulation module, and is connected to the control unit.

5. The plasma ignition device according to claim 4, characterized in that, The voltage regulation unit includes: a second inductive device and a second capacitive device; wherein, one end of the second inductive device is the radio frequency input terminal of the voltage regulation unit, the other end of the second inductive device is the radio frequency output terminal of the voltage regulation unit, and the other end of the second inductive device is also grounded through the second capacitive device; At least one of the second inductive device and the second capacitive device is an adjustable device.

6. The plasma ignition device according to claim 1, characterized in that, The radio frequency matching device is connected to the upper electrode of the plasma processing unit through a preset conductive metal device.

7. The plasma ignition device according to claim 6, characterized in that, The preset conductive metal device is disposed within a preset shield between the radio frequency matching unit and the plasma processing unit.

8. The plasma ignition device according to any one of claims 1-7, characterized in that, The detection unit is a voltage detection probe, and the probe of the voltage detection probe is set at a preset position close to the upper electrode of the plasma processing unit to connect to the upper electrode of the plasma processing unit.

9. A semiconductor thin film device, characterized in that, include: The plasma ignition device according to any one of claims 1-8.

10. A plasma ignition control method, characterized in that, The control unit applied in any one of the plasma ignition devices according to claims 1-8, the method comprising: Obtain the detection voltage of the upper electrode of the plasma processing unit; The target adjustment parameter is determined based on the correspondence between the detected voltage and the preset voltage and adjustment parameters; According to the target adjustment parameters, the control adjustment device adjusts the voltage of the radio frequency power supply output to the upper electrode of the plasma processing unit through the radio frequency matching device.

11. The method according to claim 10, characterized in that, If the regulating device includes: a multi-stage voltage regulating unit and a radio frequency switch connected in series, then the correspondence between the voltage and the regulating parameters is: the correspondence between the voltage and the number of stages; The step of determining the target adjustment parameter based on the correspondence between the detected voltage and the preset voltage and adjustment parameters includes: Based on the correspondence between the detected voltage and the voltage and the number of stages, the target number of stages is determined, and the target adjustment parameter is the target number of stages; The step of controlling the adjustment device to adjust the voltage of the radio frequency power supply output to the upper electrode of the plasma processing unit through the radio frequency matching unit according to the target adjustment parameters includes: According to the target level, the radio frequency switch is controlled to turn on the voltage regulation unit of the target level in order to regulate the voltage of the upper electrode.

12. The method according to claim 10, characterized in that, If the regulating device includes a first-stage voltage regulating unit, then the correspondence between the voltage and the regulating parameters is as follows: the correspondence between the voltage and the circuit parameters. The step of determining the target adjustment parameter based on the correspondence between the detected voltage and the preset voltage and adjustment parameters includes: Based on the correspondence between the detected voltage and the voltage and circuit parameters, the target circuit parameters are determined, and the target adjustment parameters are the target circuit parameters. The step of controlling the adjustment device to adjust the voltage of the radio frequency power supply output to the upper electrode of the plasma processing unit through the radio frequency matching unit according to the target adjustment parameters includes: Based on the target circuit parameters, the circuit parameters of the first-stage voltage regulation unit are controlled to be the target circuit parameters in order to regulate the voltage of the upper electrode.

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