A plasma generating method and device

Abstract

The present invention discloses a plasma generation method and device, which includes the following steps: (1) providing a base layer, providing a first film layer on the base layer, and fixing the base and the first film layer; (2) providing at least one liquid-passing serpentine channel on the first film layer. A second film layer is provided, and a ventilation serpentine channel is provided on the side of the second film layer close to the gas barrier film, wherein the shape of the ventilation serpentine channel and the shape of the liquid-passing serpentine channel at least partially overlap; the serpentine ventilation channel of the second film layer is connected to a high-voltage power supply through the conductive glass to generate low-temperature plasma; the liquid inlet of the liquid-passing serpentine channel is controlled so that the low-temperature plasma passes through the gas barrier film and reacts with the liquid in the liquid-passing serpentine channel. The present invention adopts the method of serpentine air channels, which greatly increases the reaction efficiency of the device, and can generate as much plasma as possible under the same area, with high efficiency and stability.

Description

Technical Field

[0001] The present invention relates to the field of microfluidics, and in particular to a plasma generating method and device. Background Art

[0002] Plasma is an excellent conductor of electricity, and cleverly designed magnetic fields can capture, move, and accelerate it. Advances in plasma physics are providing new technologies and techniques for the further development of materials, energy, information, environmental space, space physics, geophysics, and other sciences.

[0003] Existing plasma generation methods all utilize microfluidic plasma devices, which first generate plasma bubbles. A drawback of these devices is that bubble generation is difficult to control, requiring the coordination of precision air and liquid pumps. This makes precise control of bubble size difficult. These devices can only generate microplasma bubbles after bubble generation. This difficulty in precisely controlling bubble size leads to uncertainty and instability in plasma generation. Summary of the Invention

[0004] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is how to provide a plasma generating method and generating device so as to stably control the generation of plasma.

[0005] Based on the above technical problems, the present invention provides a plasma generating method, comprising the following steps:

[0006] (1) providing a base layer, providing a first film layer on the base layer, and fixing the base layer and the first film layer;

[0007] (2) At least one liquid-passing serpentine channel is provided on the first film layer.

[0008] (3) at least one gas barrier film is provided on the liquid-passing serpentine channel;

[0009] (4) a second film layer is provided on the gas barrier film, and a ventilation serpentine channel is provided on a side of the second film layer close to the gas barrier film, wherein the shape of the ventilation serpentine channel at least partially overlaps with the shape of the liquid passing serpentine channel;

[0010] (5) At least one conductive glass is provided on the second film layer.

[0011] (6) The serpentine ventilation channel of the second film layer is connected to a high-voltage power supply through the conductive glass to generate low-temperature plasma;

[0012] The liquid is controlled to flow into the liquid-passing serpentine channel, so that the low-temperature plasma passes through the gas barrier film and reacts with the liquid in the liquid-passing serpentine channel.

[0013] Preferably, in step (1), fixing the substrate and the first film layer comprises the following steps:

[0014] (11) Plasma-treating the first film layer and the base layer;

[0015] (12) Heat the first film layer and the base layer at 120° C. for 20 minutes.

[0016] Preferably, in step (4), fixing the first membrane layer and the second membrane layer comprises the following steps:

[0017] (41) Plasma treating the first film layer and the second film layer;

[0018] (42) The first film layer and the second film layer are heated at 120° C. for 20 minutes.

[0019] Preferably, the conductive glass includes a conductive layer and a second glass layer.

[0020] Preferably, in step (5), the conductive layer and the second glass layer are fixed according to the following steps:

[0021] (51) Plasma-treating the conductive layer and the second glass layer;

[0022] (52) The conductive layer and the second glass layer are heated at 120° C. for 20 minutes.

[0023] Preferably, in step (3), the gas barrier film is configured as a porous medium film.

[0024] Preferably, in step (3), the air barrier film is set to be a Teflon film.

[0025] To better illustrate the content of the present invention, the present invention further provides a plasma generating device, comprising a first film layer and a second film layer, wherein the first film layer is provided with a liquid-passing serpentine channel, and the second film layer is provided with a ventilation serpentine channel, wherein the liquid-passing serpentine channel and the ventilation serpentine channel at least partially overlap;

[0026] A gas barrier film is provided between the liquid-passing serpentine channels;

[0027] A conductive glass is provided on the liquid-passing serpentine channel, and the conductive glass is connected to a high-voltage power supply for electrifying the serpentine ventilation channel.

[0028] Preferably, the first film layer and the second film layer are both configured as films.

[0029] Preferably, a liquid inlet and a liquid outlet are provided on the liquid-passing serpentine channel, and the liquid inlet is connected to a liquid pump for controlling the liquid inlet speed.

[0030] The beneficial effects of the present invention are:

[0031] (1) The plasma provided by the present invention overcomes the drawback of conventional plasma devices, which often make bubble generation difficult to control. By arranging the serpentine gas and liquid channels and partially overlapping them, as well as insulating them with a thin film, the gas and liquid channels in the gas channels can react stably and fully without relying on precise control of the liquid and gas pumps, and without generating bubbles. The device of the present invention enables the microfluidic chip to maintain a three-phase equilibrium (gas-plasma-liquid) for a long period of time and continuously synthesize nanomaterials.

[0032] (2) The manufacturing process of this device is mainly through the "sandwich" method, which stacks and fixes the materials layer by layer through plasma treatment + heating. The device is stable and strong, and can stably generate relevant gases. In this device, the porous medium film (PTFE) serves to isolate the upper and lower channels, so that the gas and liquid remain stable. In addition, gas / liquid is continuously introduced into the upper and lower channels, so that the circuit will not be broken, and thus the plasma in the gas channel is continuously and stably generated.

[0033] (3) In this device, the serpentine airway is used to greatly increase the reaction efficiency of the device, and it can generate as much plasma as possible under the same area, with high efficiency and stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 It is a structural diagram of a specific embodiment of the present invention.

[0035] Figure 2 yes Figure 1 main view.

[0036] Figure 3 yes Figure 2 A-direction sectional view.

[0037] Figure 4 yes Figure 2 B-direction cross-sectional view.

[0038] Figure 5 yes Figure 1 Schematic diagram of the working principle of the embodiment.

[0039] Figure 6 Schematic diagram of the steps of generating plasma according to the present invention.

[0040] Figure 7 It is an actual effect diagram of an embodiment of the present invention. DETAILED DESCRIPTION

[0041] The present invention will be further described below with reference to the accompanying drawings and examples: Example 1

[0042] like Figure 1-Figure 2 As shown, the present invention provides embodiment 1, as Figure 1 A plasma generating device includes a first film layer 1 and a second film layer 2. In this embodiment, a glass substrate 6 can be set below the first film layer 1. The first film layer 1 and the second film layer 2 are both set as PDMS layers. The purpose of setting the PDMS layer is to make the gas-liquid reaction more stable. At the same time, the PDMS layer can cooperate more firmly with the substrate to form a more stable structure. Figure 4 The first film layer is provided with a liquid-passing serpentine channel 11, such as Figure 3 A ventilation serpentine channel 22 is provided on the second membrane layer 2, and there is at least partial overlap between the liquid serpentine channel 11 and the ventilation serpentine channel 22; the reaction channel is set to be serpentine, so that the gas and liquid in the reaction channel can react fully as much as possible, so as to achieve stable and continuous generation of relevant plasma in the overall device, and a gas isolation film 3 is provided between the liquid serpentine channel 11 and the ventilation serpentine channel 22; the gas isolation film 3 is set to be a porous medium film, and the porous medium film (PTFE) serves to isolate the upper and lower channels, so that the gas and liquid remain stable; and gas / liquid is continuously introduced into the upper / lower channels, so that the circuit will not be broken, and therefore the plasma in the gas channel is also continuously and stably generated.

[0043] A conductive glass 4 is provided on the ventilation serpentine channel 11. Specifically in this embodiment, the conductive glass can be a conductive ITO layer 41, with a glass substrate underneath. The thickness of the conductive glass can be set to 1 mm. Note that a glass substrate 5 can be provided under the conductive glass to better isolate the gas-liquid reaction from the conductive glass layer.

[0044] In this embodiment, each layer has a suitable thickness. The liquid-passing serpentine channel 11 and the ventilation serpentine channel can be set to be 500um wide and 400um high. The glass substrate 6 under the first film layer can be set to be about 1mm thick.

[0045] like Figure 5Conductive glass is connected to a high-voltage power supply to energize the serpentine ventilation channel. Alternating current is connected via wires to form a simple circuit (high voltage-gas-liquid-ground). Soft hoses are used to conduct the gas and liquid channels. The liquid-passing serpentine channel is equipped with a liquid inlet and outlet, and the inlet is connected to a liquid pump to control the liquid inlet speed. The ventilation serpentine channel is equipped with an air inlet and an air outlet. One feasible method of operation is to allow helium to pass through the air inlet. When the upper helium channel is in use, the upper helium channel will generate purple low-temperature plasma after conducting electricity. Active substances such as electrons will pass through the PTFE film and undergo corresponding redox reactions with the liquid.

[0046] The working principle of plasma generation in this device is as follows: the device is connected to a low-temperature plasma generator (i.e., power supply, specification: CTP-2000K host) via a copper wire. The low-temperature plasma here acts like a power supply. After the voltage is adjusted to a stable voltage by the voltage regulator, and after the microchannel of the device is filled with helium, low-temperature plasma can be generated in the serpentine channel by dielectric barrier discharge (DBD) at atmospheric pressure (helium will increase significantly due to inelastic collisions of ionization. When the electron density in the space is higher than the breakdown voltage, many micro-discharge filaments are generated and connected between the two electrodes, and a purple luminescence phenomenon can be clearly observed). Figure 7 .

[0047] In this device, a porous dielectric film (PTFE), or Teflon membrane (in this embodiment, the Teflon membrane can be set to 60μm thick), isolates the upper and lower channels, maintaining a stable gas-liquid relationship. Gas / liquid is continuously flowing through the upper and lower channels, ensuring a continuous circuit. Because the reaction is involved, plasma is continuously and stably generated within the gas channels. When the upper helium channel conducts electricity, it generates purple low-temperature plasma, where active species such as electrons pass through the PTFE membrane and undergo corresponding redox reactions with the liquid. Example 2

[0048] In addition to providing Example 1, this patent also provides methods for assembling and using the device: Figure 5 , this embodiment provides a plasma generating method, such as Figure 6 , including the following steps:

[0049] (1) A base layer 6 is provided, wherein the base layer is a glass layer. A first film layer 1 is provided on the base layer 6 to fix the base layer 6 and the first film layer 1. (2) At least one liquid-passing serpentine channel 11 is provided on the first film layer 1. (3) At least one gas barrier film 3 is provided on the liquid-passing serpentine channel 11. (4) A second film layer 2 is provided on the gas barrier film 3. A ventilation serpentine channel 22 is provided on the side of the second film layer 2 close to the gas barrier film. The shape of the ventilation serpentine channel 22 and the shape of the liquid-passing serpentine channel 11 at least partially overlap. Only when there is a partial overlap can the liquid and gas react fully. (5) At least one conductive glass is provided above the second film layer 2. The conductive glass can be a conductive ITO layer, with a glass substrate provided below. Note that a glass substrate 5 can be provided below the conductive glass to better isolate the gas-liquid reaction from the conductive glass layer.

[0050] The specific method of generating plasma is that the serpentine ventilation channel of the second film layer 2 is connected to a high voltage power supply through conductive glass and energized to generate low temperature plasma;

[0051] The liquid is fed into the liquid-passing serpentine channel 22 so that the low-temperature plasma can pass through the gas barrier film 3 and react with the liquid in the liquid-passing serpentine channel 11 .

[0052] In this embodiment, as shown in FIG6 , in step (1), the substrate 6 and the first film layer are fixed, which includes the following steps: (11) plasma treating the first film layer and the substrate layer; (12) heating the first film layer and the substrate layer at 120° C. for 20 minutes.

[0053] In this embodiment, in step (4), fixing the first membrane layer 1 and the second membrane layer 2 includes the following steps:

[0054] (41) Plasma treatment is performed on the first film layer 1 and the second film layer 2;

[0055] (42) The first film layer 1 and the second film layer 2 are heated at 120°C for 20 minutes.

[0056] The conductive glass includes a conductive layer 41 and a second glass layer 5 .

[0057] Wherein, in step (5), the conductive layer and the second glass layer are fixed according to the following steps: (51) the conductive layer and the second glass layer are subjected to plasma treatment; (52) the conductive layer and the second glass layer are heated at 120° C. for 20 minutes.

[0058] In this embodiment, in step (3), the gas barrier film is configured as a porous dielectric film, in particular, a Teflon film.

[0059] In this embodiment, the specific method of generating plasma is to set a liquid inlet and a liquid outlet in the ventilation serpentine channel 22, wherein helium is passed through the liquid inlet, and AC high voltage is set above the ventilation serpentine channel 22, including a voltage regulator and a low-temperature plasma generator (the low-temperature plasma generator is used to generate high voltage, and the voltage regulator is used to stabilize the relevant voltage). When power is turned on, the helium is ionized to generate plasma, and passes through the porous medium layer, that is, the Teflon film, to react with the liquid in the liquid-passing serpentine channel, wherein the liquid-passing serpentine channel is externally connected to a liquid inlet, and the liquid inlet is provided with a soft rubber tube, which is connected to a liquid pump.

[0060] like Figure 7 In this device, a porous dielectric film (PTFE), or Teflon, isolates the upper and lower channels, maintaining stable gas-liquid flow. Gas / liquid flows continuously through the upper and lower channels, ensuring a continuous circuit. Because the reaction is involved, plasma is continuously and stably generated within the channels. Conductive conduction in the upper helium channel generates purple, low-temperature plasma, where active species such as electrons penetrate the PTFE film and undergo corresponding redox reactions with the liquid.

[0061] The above describes in detail the preferred embodiments of the present invention. It should be understood that those skilled in the art can make numerous modifications and variations based on the concepts of the present invention without inventive effort. Therefore, any technical solutions that can be derived by those skilled in the art through logical analysis, reasoning, or limited experimentation based on the concepts of the present invention and the prior art should be within the scope of protection defined by the claims.

Claims

1. A method for generating plasma, characterized in that: The following steps are involved: (1) providing a base layer, providing a first film layer on the base layer, and fixing the base layer and the first film layer; (2) providing at least one liquid-passing serpentine channel on the first film layer; (3) at least one gas barrier film is provided on the liquid-passing serpentine channel; (4) a second film layer is provided on the gas barrier film, and a ventilation serpentine channel is provided on a side of the second film layer close to the gas barrier film, wherein the shape of the ventilation serpentine channel at least partially overlaps with the shape of the liquid passing serpentine channel; (5) disposing at least one conductive glass on the second film layer; (6) The serpentine ventilation channel of the second film layer is connected to a high-voltage power supply through the conductive glass to generate low-temperature plasma; The liquid is controlled to flow into the liquid-passing serpentine channel, so that the low-temperature plasma passes through the gas barrier film and reacts with the liquid in the liquid-passing serpentine channel.

2. The plasma generating method according to claim 1, wherein: In the step (1), the substrate and the first film layer are fixed, comprising the following steps: (11) Plasma treating the first film layer and the base layer; (12) The first film layer and the base layer are heated at 120° C. for 20 minutes.

3. The plasma generating method according to claim 1, wherein: In the step (4), fixing the first membrane layer and the second membrane layer comprises the following steps: (41) performing plasma treatment on the first film layer and the second film layer; (42) The first film layer and the second film layer are heated at 120° C. for 20 minutes.

4. The plasma generating method according to claim 1, wherein: The conductive glass includes a conductive layer and a second glass layer.

5. The plasma generating method according to claim 4, wherein: In the step (5), the conductive layer and the second glass layer are fixed according to the following steps: (51) Plasma-treating the conductive layer and the second glass layer; (52) The conductive layer and the second glass layer are heated at 120° C. for 20 minutes.

6. The plasma generating method according to claim 1, wherein: In the step (3), the gas barrier film is configured as a porous medium film.

7. The plasma generating method according to claim 6, wherein: In the step (3), the gas barrier film is set to be a Teflon film.

8. A plasma generating device, characterized in that: The invention comprises a first membrane layer and a second membrane layer, wherein the first membrane layer is provided with a liquid-passing serpentine channel, and the second membrane layer is provided with a ventilation serpentine channel, and the liquid-passing serpentine channel and the ventilation serpentine channel at least partially overlap with each other; A gas barrier film is provided between the liquid-passing serpentine channels; A conductive glass is provided on the liquid-passing serpentine channel, and the conductive glass is connected to a high-voltage power supply for electrifying the serpentine ventilation channel.

9. The plasma generating device according to claim 8, wherein: The first film layer and the second film layer are both configured as films.

10. The plasma generating device according to claim 8, wherein a liquid inlet and a liquid outlet are provided on the liquid-passing serpentine channel, and the liquid inlet is connected to a liquid pump for controlling the liquid inlet speed.

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