High-frequency module and communication device

Abstract

The object of the present invention is to further improve the heat dissipation of electronic components. A high-frequency module (1) comprises a mounting substrate (100), a filter (e.g., a transmitting filter 41), a resin layer (120), a shielding layer (110), and a metal component (130). The resin layer (120) covers at least a portion of the outer peripheral surface (e.g., the outer peripheral surface 41b) of the filter. The shielding layer (110) covers at least a portion of the resin layer (120). The metal component (130) is arranged on the first main surface (101) of the mounting substrate (100). The metal component (130) is connected to the surface of the filter on the side opposite to the mounting substrate (100), the shielding layer (110), and the first main surface (101) of the mounting substrate (100).

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a filter for passing a high-frequency signal, and a communication device including the high-frequency module. Background Art

[0002] Conventionally, there is known a high-frequency module that improves the heat dissipation performance of an electronic component (eg, a filter) (eg, see Patent Document 1).

[0003] The power amplifier module (high-frequency module) disclosed in Patent Document 1 includes a substrate, a surface acoustic wave duplexer, an insulating resin, a conductive shield, and a first conductive portion. The surface acoustic wave duplexer is mounted on the substrate, and the insulating resin covers the surface acoustic wave duplexer. The conductive shield covers the surface of the insulating resin. The first conductive portion is provided on the surface of the surface acoustic wave duplexer and is electrically connected to the conductive shield.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2016 / 117196 Summary of the Invention

[0007] Problems to be solved by the invention

[0008] Furthermore, the heat dissipation of electronic components such as filters and power amplifiers may be insufficient.

[0009] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a high-frequency module and a communication device capable of further improving the heat dissipation performance of electronic components.

[0010] Solutions for solving problems

[0011] A high-frequency module according to one embodiment of the present invention comprises a mounting substrate, a filter, a resin layer, a shielding layer, and a metal component. The mounting substrate has a first main surface and a second main surface facing each other. The filter is arranged on the first main surface of the mounting substrate to allow high-frequency signals to pass through. The resin layer is arranged on the first main surface side of the mounting substrate, covering at least a portion of the outer peripheral surface of the filter. The shielding layer is arranged on the surface of the resin layer on the side opposite to the mounting substrate, covering at least a portion of the resin layer, and connected to the ground. The metal substrate is arranged on the first main surface of the mounting substrate. The metal component is connected to the surface of the filter on the side opposite to the mounting substrate, the shielding layer, and the first main surface of the mounting substrate.

[0012] A high-frequency module according to one embodiment of the present invention comprises a mounting substrate, a power amplifier, a resin layer, a shielding layer, and a metal component. The mounting substrate has a first main surface and a second main surface facing each other. The power amplifier is arranged on the first main surface of the mounting substrate and amplifies a transmission signal which is a high-frequency signal. The resin layer is provided on the first main surface side of the mounting substrate and covers at least a portion of the outer peripheral surface of the power amplifier. The shielding layer is provided on the surface of the resin layer on the opposite side to the mounting substrate, covers at least a portion of the resin layer, and is connected to the ground. The metal component is provided on the first main surface of the mounting substrate. The metal component comprises a first plate-shaped component and a second plate-shaped component. The first component is provided between the power amplifier and the shielding layer. The second component intersects with the first component. The first component is connected to the power amplifier and the shielding layer.

[0013] A communication device according to one embodiment of the present invention includes any one of the above-described high-frequency modules and a signal processing circuit that processes the high-frequency signal passing through the high-frequency module.

[0014] Effects of the Invention

[0015] According to the present invention, the heat dissipation performance of electronic components such as filters and power amplifiers can be further improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic circuit diagram showing the high-frequency module according to the first embodiment.

[0017] Figure 2 This is a cross-sectional view of the same high-frequency module.

[0018] Figure 3 This is a perspective view of the metal components of the high-frequency module shown above.

[0019] Figure 4 This is a cross-sectional view of a high-frequency module according to Modification 1 of Embodiment 1.

[0020] Figure 5 This is a cross-sectional view of a high-frequency module according to a second modification of the first embodiment.

[0021] Figure 6 This is a cross-sectional view of a high-frequency module according to Modification 3 of Embodiment 1.

[0022] Figure 7 This is a cross-sectional view of a high-frequency module according to Modification 4 of Embodiment 1.

[0023] Figure 8 This is a cross-sectional view of a high-frequency module according to a fifth modification of the first embodiment.

[0024] Figure 9 This is a cross-sectional view of a high-frequency module according to Modification 6 of Embodiment 1.

[0025] Figure 10 This is a cross-sectional view of a high-frequency module according to a seventh modification of the first embodiment.

[0026] Figure 11 This is a cross-sectional view of a high-frequency module according to the second embodiment.

[0027] Figure 12 This is a cross-sectional view of a high-frequency module according to Modification 1 of Embodiment 2.

[0028] Figure 13 This is a cross-sectional view of a high-frequency module according to the third embodiment.

[0029] Figure 14 This is a cross-sectional view of a high-frequency module according to Modification 1 of Embodiment 3. DETAILED DESCRIPTION

[0030] In the following embodiments, etc., reference is made to Figures 2 to 14 These are schematic drawings, and the size ratios and thickness ratios of the components in the drawings do not necessarily reflect the actual size ratios.

[0031] (Implementation 1)

[0032] Next, use Figures 1 to 3 The high-frequency module 1 and the communication device 500 according to the first embodiment will be described.

[0033] (1) Summary

[0034] like Figure 1 As shown, the high frequency module 1 includes an antenna terminal 10, a switch 20, a first matching circuit 31, a second matching circuit 32, a transmission filter 41, a reception filter 42, a third matching circuit 51, a fourth matching circuit 52, a power amplifier 61, and a low noise amplifier 62. Figure 2 and Figure 3 As shown, the high-frequency module 1 further includes a mounting substrate 100 , a shield layer 110 , a metal member 130 , and a resin layer 120 .

[0035] The transmission filter 41 is a filter that allows transmission signals (high frequency signals) of a predetermined frequency band to pass. The reception filter 42 is a filter that allows reception signals (high frequency signals) of a predetermined frequency band to pass. The mounting substrate 100 has a first main surface 101 and a second main surface 102 (see FIG. 1 ) that face each other in the thickness direction D1 of the mounting substrate 100. Figure 2 ).

[0036] Antenna terminal 10 (see Figure 1 ) and antenna 510 (refer to Figure 1 ) is electrically connected. Here, "connected" means electrically connected. That is, "antenna terminal 10 is electrically connected to antenna 510" means that antenna terminal 10 is electrically connected to antenna 510.

[0037] The switch 20 is configured to connect the transmit filter 41 and the receive filter 42 to the antenna 510. The switch 20 is configured to connect the receive filter 42 and other receive filters (not shown) to the antenna 510 at the same time. By connecting the receive filter 42 and other receive filters at the same time, simultaneous communication can be performed using the receive filter 42 and other receive filters. Regarding "simultaneous communication is possible", it is assumed that if the frequency band is specified as being capable of simultaneous communication using the 3GPP (Third Generation Partnership Project) LTE standard (LTE: Long Term Evolution), simultaneous communication is possible. In addition, the switch 20 can also be configured to connect the transmit filter 41 and other transmit filters (not shown) to the antenna 510 at the same time.

[0038] Resin layer 120 is provided on first principal surface 101 side of mounting substrate 100 and covers at least a portion of the filter outer peripheral surface (side surface). In the first embodiment, resin layer 120 covers the entire outer peripheral surface 41b of transmission filter 41 and the entire outer peripheral surface of reception filter 42.

[0039] Furthermore, the resin layer 120 covers at least a portion of the outer peripheral surface (side surface) 61b of the power amplifier 61. In the first embodiment, the resin layer 120 covers the entire outer peripheral surface 61b of the power amplifier 61.

[0040] The shield layer 110 is provided on the surface of the resin layer 120 opposite to the mounting substrate 100 and covers at least a portion of the resin layer 120. The shield layer 110 is connected to the ground via the ground terminal 202.

[0041] The metal component 130 is arranged on the first principal surface 101 of the mounting substrate 100. The metal component 130 is connected to the surface of the filter (transmitting filter 41) opposite to the mounting substrate 100, the shielding layer 110, and the first principal surface 101 of the mounting substrate 100. Specifically, one end of the metal component 130 is electrically connected to the filter, and the other end is electrically connected to the first principal surface 101 of the mounting substrate 100. This one end of the metal component 130 is electrically connected to the surface of the filter opposite to the mounting substrate 100, i.e., the connection surface. In the first embodiment, one end of the metal component 130 is electrically connected to the connection surface 41a of the transmitting filter 41. Furthermore, a portion of the metal component 130 is electrically connected to the shielding layer. Here, "arranged" means that the electronic component, etc., being arranged, is placed in a specific position. That is, "the metal component 130 is arranged on the first principal surface 101 of the mounting substrate 100" means that the metal component 130 is placed at a specific position on the first principal surface 101 of the mounting substrate 100. As mentioned above, "connected" means electrically connected. That is, "the metal component 130 is connected to the surface of the filter (transmitting filter 41) on the opposite side of the mounting substrate 100, the shielding layer 110 and the first main surface 101 of the mounting substrate 100" means that the metal component 130 is electrically connected to the surface of the filter (transmitting filter 41) on the opposite side of the mounting substrate 100, the shielding layer 110 and the first main surface 101 of the mounting substrate 100.

[0042] In the high-frequency module 1, a plurality of electronic components are mounted on the first principal surface 101 or the second principal surface 102 of the mounting substrate 100. Here, “the electronic components are mounted on the first principal surface 101 (or the second principal surface 102) of the mounting substrate 100” includes: the electronic components are arranged on the mounting substrate 100 (mechanically connected to the mounting substrate 100); and the electronic components are electrically connected to (the appropriate conductor portion of) the mounting substrate 100. Therefore, in the high-frequency module 1, each of the plurality of electronic components is arranged on the first principal surface 101 or the second principal surface 102 of the mounting substrate 100. The plurality of electronic components are not limited to components mounted on the mounting substrate 100, but may also include circuit elements provided in the mounting substrate 100. Figure 2 In FIG. 1 , illustration of a plurality of wirings constituted by the conductor portion, via conductors, and the like of the above-described mounting substrate 100 is omitted.

[0043] (2) Structure

[0044] Below, refer to Figures 1 to 3 The configurations of the high-frequency module 1 and the communication device 500 according to the first embodiment will be described.

[0045] The high-frequency module 1 involved in embodiment 1 is used for a communication device 500, for example. The communication device 500 is, for example, a portable phone (for example, a smartphone), but is not limited thereto, and may also be, for example, a wearable terminal (for example, a smart watch). The high-frequency module 1 is, for example, a module that can support the 4G (fourth generation mobile communication) standard and the 5G (fifth generation mobile communication) standard. The 4G standard is, for example, the 3GPP (Third Generation Partnership Project) LTE standard (LTE: Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is, for example, a module that can support carrier aggregation and dual connectivity. Here, carrier aggregation and dual connectivity refer to communications that use radio waves of multiple frequency bands at the same time.

[0046] The high-frequency module 1 is configured, for example, to amplify a transmission signal (high-frequency signal) input from a signal processing circuit 501 and output the amplified signal to an antenna 510. The high-frequency module 1 is configured, for example, to amplify a reception signal (high-frequency signal) input from an antenna 510 and output the amplified signal to the signal processing circuit 501. The signal processing circuit 501 is not a component of the high-frequency module 1, but rather a component of a communication device 500 including the high-frequency module 1. The high-frequency module 1 is controlled, for example, by the signal processing circuit 501 included in the communication device 500. The communication device 500 includes the high-frequency module 1 and the signal processing circuit 501. The communication device 500 further includes an antenna 510. The communication device 500 further includes a circuit substrate on which the high-frequency module 1 is mounted. The circuit substrate is, for example, a printed circuit board. The circuit substrate includes a ground electrode to which a ground potential is supplied.

[0047] The signal processing circuit 501 processes the signal (e.g., a received signal, a transmitted signal) passing through the high-frequency module. The signal processing circuit 501 includes, for example, an RF signal processing circuit 502 and a baseband signal processing circuit 503. The RF signal processing circuit 502 is, for example, an RFIC (Radio Frequency Integrated Circuit) that processes the high-frequency signal. The RF signal processing circuit 502 performs signal processing such as up-conversion on the high-frequency signal (transmitted signal) output from the baseband signal processing circuit 503, and outputs the high-frequency signal after signal processing. In addition, the RF signal processing circuit 502 performs signal processing such as down-conversion on the high-frequency signal (received signal) output from the high-frequency module 1, and outputs the high-frequency signal after signal processing to the baseband signal processing circuit 503.

[0048] The baseband signal processing circuit 503 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 503 generates an I-phase signal and a Q-phase signal based on the baseband signal. The baseband signal is, for example, a sound signal, an image signal, etc. input from the outside. The baseband signal processing circuit 503 performs IQ modulation processing by synthesizing the I-phase signal and the Q-phase signal, and outputs a transmission signal. At this time, the transmission signal is generated as a modulated signal (IQ signal) obtained by amplitude modulating a carrier signal of a specified frequency with a period longer than the period of the carrier signal. The received signal processed by the baseband signal processing circuit 503 is used as an image signal for image display, or as a sound signal for calls. The high-frequency module 1 involved in embodiment 1 transmits high-frequency signals (transmission signals and reception signals) between the antenna 510 and the RF signal processing circuit 502 of the signal processing circuit 501.

[0049] like Figure 1 As shown, the high frequency module 1 includes an antenna terminal 10, a switch 20, a first matching circuit 31, a second matching circuit 32, a transmission filter 41, a reception filter 42, a third matching circuit 51, a fourth matching circuit 52, a power amplifier 61, and a low noise amplifier 62. Figure 1 As shown, the high-frequency module 1 further includes a signal input terminal 71 and a signal output terminal 72 .

[0050] The antenna terminal 10 is electrically connected to the antenna 510 .

[0051] The switch 20 is electrically connected to the antenna terminal 10. The switch 20 is electrically connected to the transmit filter 41 and the receive filter 42. Specifically, the switch 20 has a common terminal 21 and a plurality of (two in the illustrated example) selection terminals 22 and 23. The switch 20 selects at least one of the plurality of selection terminals 22 and 23 as the connection destination of the common terminal 21 under the control of the signal processing circuit 501. That is, the switch 20 selectively connects the transmit filter 41 and the receive filter 42 to the antenna 510. The common terminal 21 is electrically connected to the antenna terminal 10. That is, the common terminal 21 is electrically connected to the antenna 510 via the antenna terminal 10. In addition, the common terminal 21 is not limited to being directly connected to the antenna 510. A filter or a coupler may also be provided between the common terminal 21 and the antenna 510. The selection terminal 22 is electrically connected to the transmit filter 41. The selection terminal 23 is electrically connected to the receive filter 42.

[0052] The first matching circuit 31 is, for example, an inductor. The first matching circuit 31 is electrically connected to the path between the switch 20 and the transmit filter 41 to achieve impedance matching between the switch 20 and the transmit filter 41. The second matching circuit 32 is electrically connected to the path between the select terminal 23 of the switch 20 and the receive filter 42 to achieve impedance matching between the switch 20 and the receive filter 42.

[0053] The transmission filter 41 is a filter that allows a transmission signal of a specified frequency band input from the signal processing circuit 501 to pass. The transmission filter 41 is, for example, a ladder-type filter having a plurality of (for example, four) series arm resonators and a plurality of (for example, three) parallel arm resonators. The transmission filter 41 is, for example, an elastic wave filter. Each of the plurality of series arm resonators and the plurality of parallel arm resonators of the elastic wave filter is composed of an elastic wave resonator. The elastic wave filter is, for example, a surface acoustic wave filter that utilizes surface acoustic waves. In the surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW (Surface Acoustic Wave) resonator. In addition, the transmission filter 41 is not limited to a SAW filter. In addition to being a SAW filter, the transmission filter 41 may also be, for example, a BAW (Bulk Acoustic Wave) filter. The resonator in the BAW filter is, for example, a Film Bulk Acoustic Resonator (FBAR) or a Solidly Mounted Resonator (SMR). The BAW filter has a substrate, for example, a silicon substrate.

[0054] The transmission filter 41 is electrically connected to the switch 20 via the first matching circuit 31 . The input terminal of the transmission filter 41 is electrically connected to the third matching circuit 51 , and the output terminal of the transmission filter 41 is electrically connected to the first matching circuit 31 .

[0055] The receiving filter 42 is a filter that allows the receiving signal of a specified frequency band received by the antenna 510 to pass. The receiving filter 42 is, for example, a ladder-type filter having a plurality of (for example, 4) series arm resonators and a plurality of (for example, 3) parallel arm resonators. The receiving filter 42 is, for example, an elastic wave filter. Each of the plurality of series arm resonators and the plurality of parallel arm resonators of the elastic wave filter is composed of an elastic wave resonator. The elastic wave filter is, for example, a surface acoustic wave filter that utilizes surface acoustic waves. In the surface acoustic wave filter, each of the plurality of series arm resonators and the plurality of parallel arm resonators is, for example, a SAW resonator. In addition, the receiving filter 42 is not limited to a SAW filter. In addition to being a SAW filter, the receiving filter 42 may also be, for example, a BAW filter.

[0056] The reception filter 42 is electrically connected to the switch 20 via the second matching circuit 32 . The input terminal of the reception filter 42 is electrically connected to the second matching circuit 32 , and the output terminal of the reception filter 42 is electrically connected to the fourth matching circuit 52 .

[0057] The third matching circuit 51 is electrically connected to the path between the transmit filter 41 and the power amplifier 61 to achieve impedance matching between the transmit filter 41 and the power amplifier 61. The fourth matching circuit 52 is electrically connected to the path between the receive filter 42 and the low-noise amplifier 62 to achieve impedance matching between the receive filter 42 and the low-noise amplifier 62.

[0058] The power amplifier 61 amplifies the transmission signal. An input terminal of the power amplifier 61 is electrically connected to the signal input terminal 71. An output terminal of the power amplifier 61 is electrically connected to the third matching circuit 51.

[0059] The low-noise amplifier 62 amplifies the received signal. An input terminal of the low-noise amplifier 62 is electrically connected to the fourth matching circuit 52 , and an output terminal of the low-noise amplifier 62 is electrically connected to the signal output terminal 72 .

[0060] The signal input terminal 71 is connected to the RF signal processing circuit 502. That is, the power amplifier 61 is electrically connected to the RF signal processing circuit 502 via the signal input terminal 71.

[0061] The signal output terminal 72 is connected to the RF signal processing circuit 502 . That is, the low-noise amplifier 62 is electrically connected to the RF signal processing circuit 502 via the signal output terminal 72 .

[0062] The high-frequency module 1 further includes a mounting substrate 100, a plurality of (two in the illustrated example) external connection terminals 200, a resin layer 120, a shield layer 110, and a metal member 130 (see FIG. Figure 2 ).

[0063] The mounting substrate 100 has a first principal surface 101 and a second principal surface 102 facing each other in the thickness direction D1 of the mounting substrate 100. The mounting substrate 100 has a plurality of (two in the illustrated example) first pads 150 and a plurality of (eight in the illustrated example) second pads 160.

[0064] The mounting substrate 100 is, for example, a printed circuit board, an LTCC (Low Temperature Co-fired Ceramics) substrate, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. Here, the mounting substrate 100 is, for example, a multilayer substrate including a plurality of dielectric layers and a plurality of conductive layers and is a ceramic substrate. The plurality of dielectric layers and the plurality of conductive layers are stacked in the thickness direction D1 of the mounting substrate 100. The plurality of conductive layers are formed into a prescribed pattern determined for each layer. Each of the plurality of conductive layers includes one or more conductor portions in a plane orthogonal to the thickness direction D1 of the mounting substrate 100. The material of each conductive layer is, for example, copper. The plurality of conductive layers include a ground layer. In the high-frequency module 1, the plurality of external connection terminals 200 (refer to Figure 2 ) is electrically connected to the ground layer via the via conductor 140 and the first pad 150 of the mounting substrate 100. Figure 2 In the embodiment, two ground terminals 201 and 202 among the multiple ground terminals are electrically connected to the ground layer.

[0065] The mounting substrate 100 is not limited to a printed circuit board or an LTCC substrate, but may also be a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed into a prescribed pattern. When there are multiple insulating layers, the multiple insulating layers are formed into a prescribed pattern determined for each layer. The conductive layer is formed into a prescribed pattern different from the prescribed pattern of the insulating layer. When there are multiple conductive layers, the multiple conductive layers are formed into a prescribed pattern determined for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first of the two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 101 of the mounting substrate 100, and the second surface is the second main surface 102 of the mounting substrate 100. The wiring structure may also be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate composed of multiple layers.

[0066] The first principal surface 101 and the second principal surface 102 of the mounting substrate 100 are separated in the thickness direction D1 of the mounting substrate 100 and intersect with the thickness direction D1 of the mounting substrate 100. The first principal surface 101 of the mounting substrate 100 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 100, but may also include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. In addition, the second principal surface 102 of the mounting substrate 100 is, for example, orthogonal to the thickness direction D1 of the mounting substrate 100, but may also include, for example, the side surface of the conductor portion as a surface not orthogonal to the thickness direction D1. In addition, the first principal surface 101 and the second principal surface 102 of the mounting substrate 100 may also be formed with fine bumps or concave or convex portions. When viewed from above in the thickness direction D1 of the mounting substrate 100, the mounting substrate 100 is rectangular in shape, but is not limited thereto and may also be, for example, square in shape.

[0067] The high-frequency module 1 includes a switch 20 , a first matching circuit 31 , a second matching circuit 32 , a transmission filter 41 , a reception filter 42 , a third matching circuit 51 , a fourth matching circuit 52 , a power amplifier 61 , and a low-noise amplifier 62 as a plurality of electronic components.

[0068] Each of the plurality of electronic components of high-frequency module 1 is mounted on first principal surface 101 or second principal surface 102 of mounting substrate 100 . In the first embodiment, each of the plurality of electronic components of high-frequency module 1 is mounted on first principal surface 101 .

[0069] A plurality of external connection terminals 200 are arranged on the second main surface 102 of the mounting substrate 100. More specifically, the plurality of external connection terminals 200 are arranged on the second main surface 102 of the mounting substrate 100 via the first solder pads 150. The material of the plurality of external connection terminals 200 is, for example, metal (e.g., copper or a copper alloy). The plurality of external connection terminals 200 are each a solder bump.

[0070] The plurality of external connection terminals 200 include the antenna terminal 10, one or more ground terminals, a signal input terminal 71, and a signal output terminal 72. As described above, the one or more ground terminals are connected to the ground layer of the mounting substrate 100. The ground layer serves as the circuit ground of the high-frequency module 1, and the plurality of electronic components of the high-frequency module 1 include electronic components connected to the ground layer.

[0071] Resin layer 120 covers the plurality of electronic components arranged on first principal surface 101 of mounting substrate 100 on the first principal surface 101 side of mounting substrate 100. Here, resin layer 120 seals the plurality of electronic components arranged on first principal surface 101 of mounting substrate 100. Resin layer 120 includes resin (e.g., epoxy resin). Resin layer 120 may also include a filler in addition to the resin.

[0072] The shielding layer 110 covers at least a portion of the resin layer 120 (see Figure 2 ). In addition, the shielding layer 110 covers at least a portion of the metal member 130 (refer to Figure 2 ). The shielding layer 110 is conductive. The shielding layer 110 has a multilayer structure formed by stacking multiple metal layers, but is not limited to this and can also be a single metal layer. The metal layer contains one or more metals. The shielding layer 110 covers the main surface 121 of the resin layer 120 on the side opposite to the mounting substrate 100, the outer peripheral surface (side surface) 123 of the resin layer 120, and the outer peripheral surface (side surface) 103 of the mounting substrate 100. The shielding layer 110 is electrically connected to the second solder pad 163 among the multiple second solder pads 160 of the mounting substrate 100. The second solder pad 163 is electrically connected to the first solder pad 152 among the multiple first solder pads 150 via the via conductor 140. The first solder pad 152 is electrically connected to the external connection terminal 200 serving as the ground terminal 202. As a result, the potential of the shielding layer 110 can be made the same as the potential of the ground layer. That is, the shielding layer 110 can be connected to the ground.

[0073] One end of metal member 130 is electrically connected to the filter, and the other end is electrically connected to first principal surface 101 of mounting substrate 100. In Embodiment 1, one end of metal member 130 is electrically connected to transmission filter 41, and the other end is electrically connected to first principal surface 101 of mounting substrate 100. This one end of metal member 130 is electrically connected to connection surface 41a, the surface of transmission filter 41 opposite to mounting substrate 100. A portion of metal member 130 is electrically connected to shield layer 110.

[0074] Metal member 130 has a portion disposed between the filter and the electronic component disposed on first principal surface 101 of mounting substrate 100 when viewed in plan from thickness direction D1 of mounting substrate 100. In the first embodiment, metal member 130 has a portion disposed between transmit filter 41 and receive filter 42 disposed on first principal surface 101 of mounting substrate 100 when viewed in plan from thickness direction D1 of mounting substrate 100.

[0075] The metal member 130 has electrical conductivity. Figure 2 and Figure 3 As shown, metal member 130 includes a plate-shaped first member 131, a plate-shaped second member 132, and a plate-shaped third member 133. In Embodiment 1, first member 131, second member 132, and third member 133 have the same thickness. Here, "same thickness" not only means completely identical but also includes a range of allowable error.

[0076] The first member 131 is provided between the transmission filter 41, which serves as a filter, and the shielding layer 110 in the thickness direction D1 of the mounting substrate 100. The first member 131 is directly connected to a soldering pad (not shown) provided on the connection surface 41a. Furthermore, the first member 131 is electrically connected to the shielding layer 110. More specifically, of the two surfaces 1311 and 1312 of the first member 131 that face each other in the thickness direction D1, the surface 1312 that is closer to the mounting substrate 100 is electrically connected to the soldering pad provided on the connection surface 41a of the transmission filter 41. Of the two surfaces of the first member 131 that face each other in the thickness direction D1, the surface 1311 on the side opposite to the mounting substrate 100 is electrically connected to the shielding layer 110.

[0077] The second member 132 intersects the first member 131 and is connected to the first member 131. The second member 132 is provided along the thickness direction D1 (refer to Figure 2 That is, the first member 131 extends from the end of the second member 132 ( Figure 3 The second member 132 protrudes in a direction intersecting the thickness direction D1 (the upper end). The second member 132 is disposed between the transmission filter 41 and the reception filter 42, which is an electronic component. Specifically, the portion of the metal member 130 disposed between the transmission filter 41 and the reception filter 42, which is an electronic component, includes at least a portion of the second member 132.

[0078] The third member 133 protrudes from the end of the second member 132. Specifically, the third member 133 extends from the end connected to the first member 131 ( Figure 3 The upper end) of different ends ( Figure 3 The third member 133 protrudes in the same direction as the direction in which the first member 131 protrudes relative to the second member 132 when viewed from above in the thickness direction D1 of the mounting substrate 100. The third member 133 is electrically connected to the first main surface 101 of the mounting substrate 100 via the solder 170. Specifically, the third member 133 is electrically connected to the second pad 161 of the plurality of second pads 160 provided on the first main surface 101 via the solder 170. Here, the second pad 161 is electrically connected to the first pad 151 of the plurality of first pads 150 via the via conductor 141 of the plurality of via conductors 140. That is, the third member 133 is electrically connected to the first pad 151.

[0079] As described above, the mounting substrate 100 includes a plurality of pads (here, second pads 160) arranged on the first main surface 101 of the mounting substrate 100. The transmission filter 41, serving as a filter, is electrically connected to one or more of the plurality of second pads 160 via solder bumps 175. When viewed from above in the thickness direction D1 of the mounting substrate 100, the area of ​​the first member 131 is larger than the area of ​​the second pad 162.

[0080] The metal member 130 is electrically connected to the ground terminal 201 , which is an external connection terminal 200 connected to the ground among the plurality of external connection terminals 200 . More specifically, the third member 133 of the metal member 130 is electrically connected to the ground terminal 201 electrically connected to the first pad 151 .

[0081] With this structure, the transmission filter 41 is connected to the ground via the shield layer 110 and is also connected to the ground via the metal member 130. That is, the high-frequency module 1 can increase the paths for connecting the transmission filter 41 to the ground.

[0082] (3) Effect

[0083] As described above, the high-frequency module 1 of the first embodiment includes a mounting substrate 100, a filter (e.g., the transmission filter 41), a resin layer 120, a shielding layer 110, and a metal member 130. The mounting substrate 100 has a first principal surface 101 and a second principal surface 102 facing each other. The filter is arranged on the first principal surface 101 of the mounting substrate 100 and allows high-frequency signals to pass through. The resin layer 120 is provided on the first principal surface 101 side of the mounting substrate 100 and covers at least a portion of the outer peripheral surface (e.g., outer peripheral surface 41b) of the filter. The shielding layer 110 is provided on the surface of the resin layer 120 opposite to the mounting substrate 100, covers at least a portion of the resin layer 120, and is connected to the ground. The metal member 130 is provided on the first principal surface 101 of the mounting substrate 100. The metal member 130 is connected to the surface of the filter opposite to the mounting substrate 100, the shielding layer 110, and the first principal surface 101 of the mounting substrate 100.

[0084] According to this structure, the filter is connected to the ground via the shield layer 110 and also connected to the ground via the metal member 130. That is, the high-frequency module 1 has more heat dissipation paths, thereby further improving the heat dissipation performance of electronic components such as filters.

[0085] Furthermore, since both the shield layer 110 and the metal member 130 are connected to the ground, heat dissipation characteristics can be improved in both the path from the shield layer 110 to the ground and the path from the metal member 130 to the ground.

[0086] High-frequency module 1 further includes an electronic component (e.g., reception filter 42) disposed on first principal surface 101 of mounting substrate 100. Metal member 130 includes a portion (e.g., second member 132) disposed between the filter and the electronic component when viewed from above in thickness direction D1 of mounting substrate 100.

[0087] According to this configuration, it is possible to improve the isolation between the filter and the electronic component during communication.

[0088] (4) Modification

[0089] Next, a modification of the first embodiment will be described.

[0090] (4.1) Modification 1

[0091] In the first embodiment, the first member 131 of the metal member 130 is directly connected to the pad provided on the connection surface 41a of the transmission filter 41, but the present invention is not limited to this structure. The transmission filter 41 and the first member 131 may be electrically connected via another conductive member. Figure 4 A high-frequency module 1A according to Modification 1 will be described. In Modification 1, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0092] In the high-frequency module 1A according to the first modification, the transmission filter 41 and the first member 131 of the metal member 130 are electrically connected via the solder 190 (see Figure 4 ). More specifically, the solder 190 is provided on the pads (on the connection surface 41a of the transmission filter 41) Figure 4 (not shown) is electrically connected to the surface 1312 closer to the mounting substrate 100 of the two surfaces 1311 and 1312 of the first member 131 that face each other in the thickness direction D1 of the mounting substrate 100.

[0093] In the first modification, the heat dissipation performance of electronic components such as filters can also be further improved.

[0094] (4.2) Modification 2

[0095] In the first embodiment, the first member 131, the second member 132, and the third member 133 of the metal member 130 have the same thickness, but the present invention is not limited to this structure. Figure 5 A high-frequency module 1B according to Modification 2 will be described. In Modification 2, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0096] A high-frequency module 1B according to the second modification includes a metal member 130 b as a different metal member, instead of the metal member 130 included in the high-frequency module 1 .

[0097] Similar to metal member 130 in Embodiment 1, metal member 130b has one end electrically connected to transmission filter 41 and the other end electrically connected to first principal surface 101 of mounting substrate 100. Furthermore, a portion of metal member 130b is electrically connected to shield layer 110. Metal member 130b has a portion disposed between transmission filter 41 and reception filter 42 disposed on first principal surface 101 of mounting substrate 100, when viewed from above.

[0098] The metal member 130b has electrical conductivity. Figure 5 As shown, the metal member 130b includes a plate-shaped first member 131b, a plate-shaped second member 132b, and a plate-shaped third member 133b. The second member 132b and the third member 133b have the same thickness. The thickness of the first member 131b is thinner than the thickness of the second member 132b and the third member 133b.

[0099] The first member 131 b is directly connected to a pad (not shown) provided on the connection surface 41 a , similarly to the first member 131 in Embodiment 1. Furthermore, the first member 131 b is electrically connected to the shield layer 110 .

[0100] The second member 132b intersects the first member 131b and is connected to the first member 131b. The second member 132b is provided along the thickness direction D1 of the mounting substrate 100 (see Figure 5 ). That is, the first member 131b protrudes in a direction intersecting the thickness direction D1. The second member 132b is disposed between the transmission filter 41 and the reception filter 42. That is, the portion of the metal member 130b disposed between the transmission filter 41 and the reception filter 42 includes at least the second member 132b.

[0101] The third member 133b protrudes from one of the two ends of the second member 132b in the thickness direction D1 of the mounting substrate 100, the end that is different from the end connected to the first member 131b. When viewed from above in the thickness direction D1 of the mounting substrate 100, the third member 133b protrudes from the second member 132b in the same direction as the first member 131b protrudes relative to the second member 132b. The third member 133b is electrically connected to the second pad 161 of the plurality of second pads 160 on the first principal surface 101 of the mounting substrate 100 via solder 170.

[0102] In the second modification, the heat dissipation performance of electronic components such as filters can also be further improved.

[0103] (4.3) Modification 3

[0104] In the first embodiment, the metal member 130 is configured to include the first member 131, the second member 132, and the third member 133, but the present invention is not limited to this configuration. Figure 6 A high-frequency module 1C according to Modification 3 will be described. In Modification 3, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0105] A high-frequency module 1C according to Modification 3 includes a metal member 130 c as a different metal member instead of the metal member 130 included in the high-frequency module 1 .

[0106] One end of metal member 130c is electrically connected to transmission filter 41, and the other end is electrically connected to first principal surface 101 of mounting substrate 100. This one end of metal member 130c is electrically connected to connection surface 41a, the surface of transmission filter 41 opposite to mounting substrate 100. A portion of metal member 130c is electrically connected to shield layer 110.

[0107] The metal member 130 c has a portion disposed between the transmission filter 41 and the reception filter 42 disposed on the first principal surface 101 of the mounting substrate 100 when viewed in plan from the thickness direction D1 of the mounting substrate 100 .

[0108] The metal member 130c has electrical conductivity. Figure 6 As shown, the metal member 130c includes a plate-shaped first member 131c and a plate-shaped second member 132c. In the third modification, the first member 131c and the second member 132c have the same thickness.

[0109] The first member 131c is directly connected to a pad (not shown) provided on the connection surface 41a of the transmission filter 41. Furthermore, the first member 131c is electrically connected to the shield layer 110.

[0110] The second member 132c intersects the first member 131c and is connected to the first member 131c. The second member 132c is provided along the thickness direction D1 of the mounting substrate 100 (see Figure 6). That is, the first member 131c protrudes from the second member 132c in a direction intersecting the thickness direction D1. The second member 132c is arranged between the transmission filter 41 and the reception filter 42, which is an electronic component. That is, the portion of the metal member 130c arranged between the transmission filter 41 and the reception filter 42 includes at least the second member 132c. Of the two ends of the second member 132 in the thickness direction D1, the end that is different from the end connected to the first member 131 is electrically connected to the first main surface 101 of the mounting substrate 100 via solder 170. Specifically, the second member 132 is electrically connected to the second pad 161 provided on the first main surface 101 of the mounting substrate 100 via solder 170.

[0111] In the third modification, the heat dissipation performance of electronic components such as filters can also be further improved.

[0112] (4.4) Modification 4

[0113] In the first embodiment, the first member 131 of the metal member 130 is configured to be plate-shaped, but the present invention is not limited to this configuration. Figure 7 A high-frequency module 1D according to Modification 4 will be described. In Modification 4, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0114] A high-frequency module 1D according to the fourth modification includes a metal member 130 d as a different metal member instead of the metal member 130 included in the high-frequency module 1 .

[0115] One end of metal member 130d is electrically connected to transmission filter 41, and the other end is electrically connected to first principal surface 101 of mounting substrate 100. This one end of metal member 130d is electrically connected to connection surface 41a, the surface of transmission filter 41 opposite to mounting substrate 100. A portion of metal member 130d is electrically connected to shield layer 110.

[0116] The metal member 130 d has a portion disposed between the transmission filter 41 and the reception filter 42 disposed on the first principal surface 101 of the mounting substrate 100 when viewed in plan from the thickness direction D1 of the mounting substrate 100 .

[0117] The metal member 130d has electrical conductivity. Figure 7 As shown, the metal member 130 d includes a first member 131 d , a plate-shaped second member 132 , and a plate-shaped third member 133 .

[0118] The first member 131d is formed into a spring shape before being covered with the resin layer 120 (see Figure 7The first member 131 d is directly connected to a pad (not shown) provided on the connection surface 41 a of the transmission filter 41 .

[0119] The second member 132 intersects with the first member 131d and is connected to the first member 131d. In the fourth modification, the portion where the first member 131d and the second member 132 are connected is electrically connected to the shield layer 110.

[0120] By forming the first member 131 d into a spring shape, various transmission filters 41 having different thicknesses can be connected to the metal member 130 d when manufacturing the high-frequency module 1D.

[0121] Furthermore, in Modification 4, the heat dissipation performance of electronic components such as filters can be further improved.

[0122] (4.5) Modification 5

[0123] In the first embodiment, the plurality of electronic components included in the high-frequency module 1 are each mounted on the first principal surface 101 of the mounting substrate 100 , but the present invention is not limited to this structure.

[0124] Alternatively, at least one of the plurality of electronic components may be provided on the second main surface 102 of the mounting substrate 100. Figure 8 A high-frequency module 1E according to Modification 5 will be described. In Modification 5, the same components as those in Embodiment 1 are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0125] The high-frequency module 1E, like the high-frequency module 1 of the first embodiment, includes Figure 1 The switch 20, the first matching circuit 31, the second matching circuit 32, the transmission filter 41, the reception filter 42, the third matching circuit 51, the fourth matching circuit 52, the power amplifier 61, and the low noise amplifier 62 are shown as a plurality of electronic components. The high frequency module 1E is similar to the high frequency module 1 of the first embodiment and includes Figure 1 The signal input terminal 71 and the signal output terminal 72 are shown.

[0126] like Figure 8 As shown, the high-frequency module 1E further includes a mounting substrate 100 , external connection terminals 210 as a plurality (two in the illustrated example) of external connection terminals 200 , a first resin layer 120 as a resin layer 120 , a second resin layer 125 , a shield layer 110 e , and a metal member 130 .

[0127] The plurality of external connection terminals 210 are composed of columnar electrodes and include an antenna terminal 10, one or more ground terminals, a signal input terminal 71, and a signal output terminal 72. As described above, the one or more ground terminals are connected to the ground layer of the mounting substrate 100. The ground layer is the circuit ground of the high-frequency module 1E, and the plurality of electronic components of the high-frequency module 1E include electronic components connected to the ground layer. Figure 8 The two external connection terminals 210 shown are ground terminals.

[0128] The switch 20 is arranged on the second main surface 102 of the mounting substrate 100 (see Figure 8 ).

[0129] The second resin layer 125 is disposed on the second principal surface 102 of the mounting substrate 100. The second resin layer 125 covers a portion of each of the plurality of electronic components and the plurality of external connection terminals 210 mounted on the second principal surface 102 of the mounting substrate 100 on the second principal surface 102 side of the mounting substrate 100. The second resin layer 125 is formed so that the front end surface of each of the plurality of external connection terminals 210 is exposed. The second resin layer 125 includes a resin (e.g., an epoxy resin). The second resin layer 125 may also include a filler in addition to the resin. The material of the second resin layer 125 may be the same as that of the first resin layer 120, or a different material.

[0130] The shield layer 110e covers the first resin layer 120, the transmission filter 41, the reception filter 42, and the power amplifier 61 (see Figure 8 ). The shielding layer 110e has conductivity. The shielding layer 110e has a multilayer structure formed by stacking multiple metal layers, similar to the shielding layer 110 of embodiment 1, but is not limited to this and can also be a single metal layer. The metal layer contains one or more metals. The shielding layer 110e covers the main surface 121 of the first resin layer 120 on the side opposite to the mounting substrate 100, the outer peripheral surface (side surface) 123 of the first resin layer 120, and the outer peripheral surface (side surface) 103 of the mounting substrate 100. In addition, the shielding layer 110e also covers at least a portion of the outer peripheral surface 126 of the second resin layer 125. In variant example 5, the shielding layer 110e covers a portion of the outer peripheral surface 126 of the second resin layer 125. The shielding layer 110e is electrically connected to the first solder pad 152 via the second solder pad 163 and the via conductor 140. The first solder pad 152 is electrically connected to the external connection terminal 210 serving as the ground terminal. As a result, the potential of the shielding layer 110e can be made the same as the potential of the ground layer.

[0131] In the fifth modification, the heat dissipation performance of electronic components such as filters can also be further improved.

[0132] (4.6) Modification 6

[0133] Reference Figure 9 A high-frequency module 1F according to Modification 6 will be described. Regarding the high-frequency module 1F according to Modification 6, the same components as those of the high-frequency module 1E according to Modification 5 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

[0134] The high-frequency module 1F according to Modification 6 differs from the high-frequency module 1E according to Modification 5 in that the external connection terminals 210 of the plurality of external connection terminals 200 are ball bumps 250. Furthermore, the high-frequency module 1F according to Modification 6 differs from the high-frequency module 1E according to Modification 5 in that it does not include the second resin layer 125 of the high-frequency module 1E according to Modification 5. The high-frequency module 1F according to Modification 6 may also include an underfill portion provided in the gap between the switch 20 and the second principal surface 102 of the mounting substrate 100.

[0135] The material of the ball bump 250 constituting each of the plurality of external connection terminals 210 is, for example, gold, copper, solder, or the like.

[0136] Among the plurality of external connection terminals 210 , a mixture of external connection terminals 210 formed of ball bumps 250 and external connection terminals 210 formed of columnar electrodes may exist.

[0137] In the sixth modification, the heat dissipation performance of electronic components such as filters can also be further improved.

[0138] (4.7) Modification 7

[0139] In the first embodiment, the metal member 130 is configured to include the plate-shaped first member 131 , the plate-shaped second member 132 , and the plate-shaped third member 133 . However, the present invention is not limited to this configuration.

[0140] The metal member 130 may also be a wire. Figure 10 A high-frequency module 1G according to Modification 7 will be described. In Modification 7, the same components as those of the high-frequency module 1 according to Embodiment 1 are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0141] The high-frequency module 1G of the seventh modification includes a plurality of metal members 130 ( Figure 10 , only one conductor 135 is shown. Each of the plurality of conductors 135 includes a first conductor 136 and a second conductor 137.

[0142] The transmission filter 41 of the modification 7 has one or more (at Figure 10Only one pad 180 (filter-side pad) is shown in the figure. The area of ​​the pad 180 is larger than the area of ​​the second pad 162 (substrate-side pad) of the mounting substrate 100 to which the transmission filter 41 is connected.

[0143] Transmit filter 41 is connected to second pad 162 via solder bump 175. One end of wire 135, specifically, one end of first wire 136, is electrically connected to pad 180. The other end of first wire 136 is electrically connected to shielding layer 110. One end of second wire 137 is electrically connected to shielding layer 110. The other end of second wire 137 is electrically connected to second pad 161 via solder 170. In other words, the other end of second wire 137 is electrically connected to ground via solder 170, second pad 161, and ground terminal 201. Thus, transmit filter 41 is electrically connected to ground via wire 135. More specifically, transmit filter 41 is electrically connected to ground via first wire 136, shielding layer 110, and second wire 137.

[0144] The second conductive wire 137 is disposed between the transmission filter 41 and the reception filter 42, which is an electronic component. That is, the portion of the metal member 130c disposed between the transmission filter 41 and the reception filter 42 includes at least the second conductive wire 137.

[0145] With this structure, the transmission filter 41 is connected to the ground via the shield layer 110 and also connected to the ground via the wire 135 serving as the metal member 130. That is, the high-frequency module 1 can increase the number of paths for connecting the transmission filter 41 to the ground.

[0146] Furthermore, the plurality of first conductive wires 136 included in each of the plurality of conductive wires 135 may be electrically connected to the plurality of pads 180 on a one-to-one basis. Alternatively, two or more first conductive wires may be electrically connected to one pad 180 .

[0147] In Modification 7 as well, the heat dissipation performance of electronic components such as filters can be further improved.

[0148] (4.8) Modification 8

[0149] In the first embodiment, the third member 133 of the metal member 130 protrudes in the same direction as the first member 131 protrudes relative to the second member 132 when viewed in plan from the thickness direction D1 of the mounting substrate 100 . However, the present invention is not limited to this structure.

[0150] The third member 133 may protrude in a direction opposite to the direction in which the first member 131 protrudes relative to the second member 132 when viewed in plan from the thickness direction D1 of the mounting substrate 100 .

[0151] In Modification 8 as well, the heat dissipation performance of electronic components such as filters can be further improved.

[0152] (4.9) Modification 9

[0153] In the first embodiment, the metal member 130 is configured to be applied to the transmission filter 41 , but the present invention is not limited to this configuration.

[0154] The metal member 130 may also be used as the receiving filter 42 .

[0155] In the ninth modification, the heat dissipation performance of electronic components such as filters can also be further improved.

[0156] (Implementation Method 2)

[0157] The high-frequency module 1H according to the second embodiment differs from the high-frequency module 1 according to the first embodiment in that it further includes a second metal member 300 that is different from the first metal member 130 serving as the metal member 130. The following description of the high-frequency module 1H according to the second embodiment focuses on these differences. Components of the high-frequency module 1H according to the second embodiment that are identical to those of the high-frequency module 1 according to the first embodiment are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0158] (1) Structure

[0159] The high-frequency module 1H includes, in addition to the structure of the high-frequency module 1 according to the first embodiment, a second metal member 300 (see Figure 11 ).

[0160] The second metal member 300 is disposed on the first principal surface 101 of the mounting substrate 100. Specifically, one end of the second metal member 300 is electrically connected to the power amplifier 61, and the other end is electrically connected to the first principal surface 101 of the mounting substrate 100. This one end of the second metal member 300 is electrically connected to the connection surface 61a of the power amplifier 61, which is opposite to the mounting substrate 100. A portion of the second metal member 300 is electrically connected to the shield layer 110.

[0161] Second metal member 300 has a portion disposed between power amplifier 61 and the electronic component disposed on first principal surface 101 of mounting substrate 100 when viewed in plan from thickness direction D1 of mounting substrate 100. In the second embodiment, second metal member 300 has a portion disposed between power amplifier 61 and transmission filter 41 when viewed in plan from thickness direction D1 of mounting substrate 100.

[0162] The second metal member 300 has electrical conductivity. Figure 11As shown, the second metal member 300 has a plate-shaped first member 301, a plate-shaped second member 302, and a plate-shaped third member 303, similarly to the first metal member 130 serving as the metal member 130. In the second embodiment, the first member 301, the second member 302, and the third member 303 have the same thickness.

[0163] The first member 301 is provided between the power amplifier 61 and the shielding layer 110 in the thickness direction D1 of the mounting substrate 100. The first member 301 is directly connected to a soldering pad (not shown) provided on the connection surface 61a. Furthermore, the first member 301 is electrically connected to the shielding layer 110. More specifically, of the two surfaces of the first member 301 that face each other in the thickness direction D1 of the mounting substrate 100, the surface closest to the mounting substrate 100 is electrically connected to the soldering pad provided on the connection surface 61a of the power amplifier 61. Of the two surfaces of the first member 301 that face each other in the thickness direction D1 of the mounting substrate 100, the surface on the opposite side from the mounting substrate 100 is electrically connected to the shielding layer 110.

[0164] The second member 302 intersects the first member 301 and is connected to the first member 301. The second member 302 is provided along the thickness direction D1 of the mounting substrate 100 (see Figure 11 ). That is, the first member 301 protrudes in a direction intersecting the thickness direction D1 of the mounting substrate 100. When viewed from above in the thickness direction D1 of the mounting substrate 100, the second member 302 is positioned between the power amplifier 61 and the transmission filter 41. That is, the portion of the second metal member 300 positioned between the power amplifier 61 and the transmission filter 41 includes at least a portion of the second member 302.

[0165] The third member 303 protrudes from an end of the second member 302. Specifically, the third member 303 protrudes from one of the two ends of the second member 302 in the thickness direction D1 of the mounting substrate 100, the end that is different from the end connected to the first member 301. When viewed from above in the thickness direction D1 of the mounting substrate 100, the third member 303 protrudes in the same direction as the direction in which the first member 301 protrudes relative to the second member 302. The third member 303 is electrically connected to the first principal surface 101 of the mounting substrate 100 via solder 171. Specifically, the third member 303 is electrically connected to the second pad 163 of the plurality of second pads 160 provided on the first principal surface 101 of the mounting substrate 100 via solder 171.

[0166] Power amplifier 61 is electrically connected to second pad 164 of second pads 160 via solder bump 176. Second pad 164 is electrically connected to heat dissipation via conductor 310. Heat dissipation via conductor 310 is electrically connected to first pad 155 of first pads 150. First pad 155 is electrically connected to one ground terminal 203 of external connection terminals 200.

[0167] Second pad 163 is electrically connected to heat dissipating via conductor 310 via path 311 including at least one of via conductors 140 and at least one of the conductive layers.

[0168] As described above, the mounting substrate 100 according to the second embodiment includes a plurality of pads (here, second pads 160) arranged on the first main surface 101 of the mounting substrate 100. The power amplifier 61 is electrically connected to the second pads 163 via the solder 171. The area of ​​the first member 301 is larger than the area of ​​the second pads 163.

[0169] Second metal member 300 is electrically connected to ground terminal 203, which is one of the external connection terminals 200 connected to the ground, through heat dissipation via conductor 310. More specifically, third member 303 of second metal member 300 is electrically connected to ground terminal 203 electrically connected to first pad 155.

[0170] With this structure, the power amplifier 61 is connected to the ground via the shield layer 110 and is also connected to the ground via the second metal member 300. That is, the high-frequency module 1H can increase the paths for connecting the power amplifier 61 to the ground.

[0171] (2) Effect

[0172] As described above, the high-frequency module 1H of the second embodiment includes a mounting substrate 100, a power amplifier 61, a resin layer 120, a shielding layer 110, and a metal member (e.g., a second metal member 300). The mounting substrate 100 has a first principal surface 101 and a second principal surface 102 facing each other. The power amplifier 61 is disposed on the first principal surface 101 of the mounting substrate 100 and amplifies a transmission signal, which is a high-frequency signal. The resin layer 120 is provided on the first principal surface 101 side of the mounting substrate 100 and covers at least a portion of the outer circumference of the power amplifier 61. The shielding layer 110 is provided on the surface of the resin layer 120 opposite the mounting substrate 100, covers at least a portion of the resin layer 120, and is connected to ground. One end of the metal member (the second metal member 300) is connected to the power amplifier 61, and the other end is connected to the first principal surface 101 of the mounting substrate 100. The metal member (the second metal member 300) includes a plate-shaped first member 301 and a plate-shaped second member 302. The first member 301 is disposed between the power amplifier 61 and the shielding layer 110. The second member 302 intersects the first member 301. The first member 301 is connected to the power amplifier 61 and the shielding layer 110.

[0173] With this structure, power amplifier 61 is connected to the ground via shield layer 110 and also connected to the ground via second metal member 300. In other words, high-frequency module 1H can increase the number of paths connecting power amplifier 61 to the ground. This further improves heat dissipation from electronic components such as power amplifier 61.

[0174] The high-frequency module 1H further includes an electronic component (e.g., the transmission filter 41) disposed on the first principal surface 101 of the mounting substrate 100. The metal member (the second metal member 300) includes a portion (e.g., the second member 302) disposed between the power amplifier 61 and the electronic component when viewed in plan from the thickness direction D1 of the mounting substrate 100.

[0175] According to this configuration, it is possible to improve the isolation between the power amplifier 61 and the electronic components during communication.

[0176] (3) Modification

[0177] Next, a modification of the second embodiment will be described.

[0178] (3.1) Modification 1

[0179] Reference Figure 12 A high-frequency module 1J according to Modification 1 of Embodiment 2 will be described. Regarding the high-frequency module 1J according to Modification 1, the same components as those of the high-frequency module 1H according to Embodiment 2 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

[0180] A high-frequency module 1J according to the first modification includes a first metal member 130 j instead of the first metal member 130 included in the high-frequency module 1H according to the second embodiment.

[0181] The first metal member 130j has a portion disposed between the filter and the electronic component disposed on the first principal surface 101 of the mounting substrate 100 when viewed from above the mounting substrate 100. In the first modification of the second embodiment, the first metal member 130j has a portion disposed between the transmission filter 41 and the reception filter 42 when viewed from above in the thickness direction D1 of the mounting substrate 100.

[0182] The first metal member 130j has electrical conductivity. Figure 12 As shown, the first metal member 130j includes a plate-shaped partitioning member 132j ​​and a plate-shaped connecting member 133j. In the first modification, the partitioning member 132j ​​and the connecting member 133j have the same thickness.

[0183] The partition member 132j ​​is provided along the thickness direction D1 (see Figure 12 The partitioning member 132j ​​is positioned between the transmit filter 41 and the receive filter 42. Specifically, the portion of the first metal member 130j positioned between the transmit filter 41 and the receive filter 42 includes at least the partitioning member 132j. One of the two ends of the partitioning member 132j ​​in the thickness direction D1 of the mounting substrate 100 is electrically connected to the shield layer 110. The other end of the partitioning member 132j ​​in the thickness direction D1 of the mounting substrate 100 is coupled to the connecting member 133j.

[0184] Connecting member 133j is coupled to an end of partitioning member 132j ​​and protrudes from that end. Specifically, third member 133 protrudes from one of the two ends of second member 132 in thickness direction D1 of mounting substrate 100, the end that is different from the end electrically connected to shielding layer 110. When viewed from above in thickness direction D1 of mounting substrate 100, connecting member 133j protrudes relative to second member 132. Connecting member 133j is electrically connected to first principal surface 101 of mounting substrate 100 via solder 170. Specifically, connecting member 133j is electrically connected to second pad 161 via solder 170. Here, second pad 161 is electrically connected to first pad 151 via via conductor 141. In other words, connecting member 133j is electrically connected to first pad 151.

[0185] The connection surface 41a of the transmission filter 41 is electrically connected to the shield layer 110 without passing through the first metal member 130 (see Figure 12 ).

[0186] In the first modification, the heat dissipation of electronic components such as the power amplifier 61 can also be further improved.

[0187] In addition, the first metal member 130 of the modification example 1 can be applied to the embodiment 1 and each modification example of the embodiment 1.

[0188] (3.2) Modification 2

[0189] Modification 1 of Embodiment 1 may be applied to the second metal member 300 of Embodiment 2. That is, the first member 301 of the second metal member 300 may be electrically connected to the power amplifier 61 via another conductive member.

[0190] For example, the first member 301 according to Modification 2 may be electrically connected to the power amplifier 61 via solder.

[0191] In the second modification, the heat dissipation of electronic components such as the power amplifier 61 can also be further improved.

[0192] (3.3) Modification 3

[0193] Modification 2 of Embodiment 1 may be applied to the second metal member 300 of Embodiment 2. That is, the thickness of the first member 301 of the second metal member 300 may be made thinner than the thicknesses of the second member 302 and the third member 303 .

[0194] In the third modification, the heat dissipation of electronic components such as the power amplifier 61 can also be further improved.

[0195] (3.4) Modification 4

[0196] Modification 3 of Embodiment 1 may be applied to the second metal member 300 of Embodiment 2. That is, the second metal member 300 may not include the third member 303 .

[0197] In this case, regarding the second member 302 of the second metal member 300, one of the two ends of the second member 302 in the thickness direction D1 of the mounting substrate 100, the end that is different from the end connected to the first member 301, is electrically connected to the first main surface 101 of the mounting substrate 100 via the solder 170. Specifically, the second member 302 is electrically connected to the second pad 161 provided on the first main surface 101 of the mounting substrate 100 via the solder 170.

[0198] In the fourth modification, the heat dissipation of electronic components such as the power amplifier 61 can also be further improved.

[0199] (3.5) Modification 5

[0200] Modification 4 of Embodiment 1 may be applied to the second metal member 300 of Embodiment 2. That is, the first member 301 of the second metal member 300 may be formed in a spring shape.

[0201] In this case, the portion where the spring-shaped first member 301 and the plate-shaped second member 302 are joined is electrically connected to the shield layer 110. By making the first member 301 spring-shaped, various power amplifiers 61 having different thicknesses can be connected to the second metal member 300.

[0202] Furthermore, in the fifth modification, the heat dissipation of electronic components such as the power amplifier 61 can be further improved.

[0203] (3.6) Modification 6

[0204] Modification 5 or 6 of Embodiment 1 may be applied to high-frequency module 1H of Embodiment 2. Specifically, in mounting substrate 100 of high-frequency module 1H, electronic components such as switch 20 may be mounted (arranged) on second principal surface 102 of mounting substrate 100 .

[0205] In the sixth modification, the heat dissipation of electronic components such as the power amplifier 61 can also be further improved.

[0206] (3.7) Modification 7

[0207] Modification 8 of Embodiment 1 may be applied to second metal member 300 of Embodiment 2. Specifically, third member 303 may protrude in a direction opposite to the direction in which first member 301 protrudes relative to second member 302 when viewed from the thickness direction D1 of mounting substrate 100 .

[0208] In the seventh modification, the heat dissipation of electronic components such as the power amplifier 61 can also be further improved.

[0209] (3.8) Modification 8

[0210] In Embodiment 2, the first metal member 130 is not an essential component. That is, in Embodiment 2, the high-frequency module 1G only needs to include at least the second metal member 300 among the first metal member 130 and the second metal member 300 .

[0211] In the eighth modification, the heat dissipation of electronic components such as the power amplifier 61 can also be further improved.

[0212] (3.9) Modification 9

[0213] Modifications 1 to 4 and 7 to 9 of the first embodiment may be applied to the first metal member 130 of the second embodiment.

[0214] In the ninth modification, the heat dissipation of electronic components such as the power amplifier 61 can also be further improved.

[0215] (Implementation 3)

[0216] The connection between the metal member and the shield layer 110 in the high-frequency module 1K according to the third embodiment differs from that in the high-frequency module 1 according to the first embodiment. The following description of the high-frequency module 1K according to the third embodiment focuses on these differences. Components of the high-frequency module 1K according to the third embodiment that are identical to those of the high-frequency module 1 according to the first embodiment are denoted by the same reference numerals, and their descriptions are omitted as appropriate.

[0217] (1) Structure

[0218] The high-frequency module 1K includes a metal member 130 k instead of the metal member 130 in the structure of the high-frequency module 1 according to the first embodiment.

[0219] In the high-frequency module 1K according to the third embodiment, shield layer 110 covers at least a portion of the side surface (outer peripheral surface 123) of resin layer 120. In the third embodiment, shield layer 110 covers principal surface 121 of resin layer 120 opposite to mounting substrate 100, outer peripheral surface (side surface) 123 of resin layer 120, and outer peripheral surface (side surface) 103 of mounting substrate 100.

[0220] The metal member 130k is disposed on the first principal surface 101 of the mounting substrate 100 . The metal member 130k is connected to the surface of the filter (transmission filter 41 ) opposite to the mounting substrate 100 , the shield layer 110 , and the first principal surface 101 of the mounting substrate 100 .

[0221] The metal member 130k has a portion disposed between the filter and the electronic component disposed on the first principal surface 101 of the mounting substrate 100 when viewed in plan from the thickness direction D1 of the mounting substrate 100. In the third embodiment, the metal member 130k has a portion disposed between the transmission filter 41 and the power amplifier 61 disposed on the first principal surface 101 of the mounting substrate 100 when viewed in plan from the thickness direction D1 of the mounting substrate 100.

[0222] The metal member 130k has electrical conductivity. The metal member 130k includes a plate-shaped first member 131k, a plate-shaped second member 132k, and a plate-shaped third member 133k. In the third embodiment, the first member 131k, the second member 132k, and the third member 133k have the same thickness.

[0223] The first member 131k is provided between the transmission filter 41, which serves as a filter, and the shielding layer 110 in the thickness direction D1 of the mounting substrate 100. The first member 131k is directly connected to a pad (not shown) provided on the connection surface 41a of the transmission filter 41. Furthermore, the first member 131k is electrically connected to the shielding layer 110. Specifically, of the two surfaces 1321 and 1322 of the first member 131k that face each other in the thickness direction D1 of the mounting substrate 100, the surface 1322 that is closer to the mounting substrate 100 is electrically connected to the pad provided on the connection surface 41a of the transmission filter 41. Furthermore, of the two surfaces 1321 and 1322 of the first member 131k, the surface 1321 is covered by the resin layer 120. That is, the resin layer 120 of the high-frequency module 1K according to the third embodiment covers the surface 1321 of the first member 131k.

[0224] The shielding layer 110 disposed on the side surface of the resin layer 120 is electrically connected to at least one end portion 1323 of the plate-shaped first member 131k (see Figure 13 ).

[0225] The second member 132k intersects the first member 131k and is connected to the first member 131k. The second member 132k is provided along the thickness direction D1 of the mounting substrate 100 (see Figure 13 That is, the first member 131k extends from the end of the second member 132k ( Figure 13 The second member 132k protrudes in a direction intersecting the thickness direction D1 of the mounting substrate 100 (the upper end). The second member 132k is disposed between the transmission filter 41 and the power amplifier 61, which is an electronic component. In other words, the portion of the metal member 130k disposed between the transmission filter 41 and the power amplifier 61 includes at least a portion of the second member 132k.

[0226] The third member 133k protrudes from the end of the second member 132k. Specifically, the third member 133k extends from the end connected to the first member 131k, of the two ends of the second member 132k in the thickness direction D1 of the mounting substrate 100 ( Figure 13 The upper end) of different ends ( Figure 13The third member 133k protrudes in a direction intersecting the thickness direction D1 of the mounting substrate 100 when viewed from above in the thickness direction D1 of the mounting substrate 100. When viewed from above in the thickness direction D1 of the mounting substrate 100, the third member 133k protrudes in the same direction as the direction in which the first member 131k protrudes relative to the second member 132k. The third member 133k is electrically connected to the first main surface 101 of the mounting substrate 100 via the solder 170. Specifically, the third member 133k is electrically connected to the second solder pad 161 of the plurality of second solder pads 160 provided on the first main surface 101 of the mounting substrate 100 via the solder 170. Here, the second solder pad 161 is electrically connected to the first solder pad 151 of the plurality of first solder pads 150 via the via conductor 141 of the plurality of via conductors 140. That is, the third member 133k is electrically connected to the first solder pad 151.

[0227] (2) Effect

[0228] As described above, the high-frequency module 1K of the third embodiment includes a mounting substrate 100, a power amplifier 61, a resin layer 120, a shielding layer 110, and a metal member 130k. The mounting substrate 100 has a first principal surface 101 and a second principal surface 102 facing each other. The power amplifier 61 is disposed on the first principal surface 101 of the mounting substrate 100 and amplifies a high-frequency transmission signal. The resin layer 120 is disposed on the first principal surface 101 side of the mounting substrate 100 and covers at least a portion of the outer peripheral surface of the power amplifier 61. The shielding layer 110 is disposed on the surface of the resin layer 120 opposite the mounting substrate 100, covers at least a portion of the resin layer 120, and is connected to ground. The metal member 130k is disposed on the first principal surface 101 of the mounting substrate 100. The metal member 130k is connected to the surface of the filter (transmission filter 41) opposite the mounting substrate 100, the shielding layer 110, and the first principal surface 101 of the mounting substrate 100.

[0229] The shield layer 110 covers at least a portion of the side surface (outer peripheral surface 123) of the resin layer 120. The shield layer 110 disposed on the side surface of the resin layer 120 is electrically connected to at least one end portion 1323 of the plate-shaped first member 131k.

[0230] With this structure, the filter is connected to the ground via the shield layer 110 and also connected to the ground via the metal member 130k. This increases the number of heat dissipation paths in the high-frequency module 1K, thereby further improving the heat dissipation performance of electronic components such as filters.

[0231] Furthermore, since both the shield layer 110 and the metal member 130 k are connected to the ground, heat dissipation characteristics can be improved in both the path from the shield layer 110 to the ground and the path from the metal member 130 k to the ground.

[0232] The high-frequency module 1K further includes an electronic component (e.g., power amplifier 61) disposed on the first principal surface 101 of the mounting substrate 100. The metal member 130k includes a portion (e.g., second member 132k) disposed between the filter and the electronic component (power amplifier 61) when viewed in plan from the thickness direction D1 of the mounting substrate 100.

[0233] According to this configuration, it is possible to improve the isolation between the filter and the electronic component during communication.

[0234] (3) Modification

[0235] Next, a modification of the third embodiment will be described.

[0236] (3.1) Modification 1

[0237] Reference Figure 14 A high-frequency module 1M according to Modification 1 of Embodiment 3 will be described. Components of the high-frequency module 1M according to Modification 1 that are identical to those of the high-frequency module 1K according to Embodiment 3 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

[0238] A high-frequency module 1M according to the first modification of the third embodiment includes a metal member 130m instead of the metal member 130k in the structure of the high-frequency module 1K according to the third embodiment.

[0239] In the high-frequency module 1M according to the third embodiment, shielding layer 110 covers at least a portion of the side surface (outer peripheral surface 123) of resin layer 120. In the first variation of the third embodiment, shielding layer 110 covers principal surface 121 of resin layer 120 opposite to mounting substrate 100, outer peripheral surface (side surface) 123 of resin layer 120, and outer peripheral surface (side surface) 103 of mounting substrate 100.

[0240] The metal member 130m is disposed on the first principal surface 101 of the mounting substrate 100. The metal member 130m is connected to the surface of the filter (transmission filter 41) opposite to the mounting substrate 100, the shield layer 110, and the first principal surface 101 of the mounting substrate 100.

[0241] The metal member 130m has a portion disposed between the filter and the electronic component disposed on the first principal surface 101 of the mounting substrate 100 when viewed in plan from the thickness direction D1 of the mounting substrate 100. In the first variation of the third embodiment, the metal member 130m has a portion disposed between the transmission filter 41 and the power amplifier 61 disposed on the first principal surface 101 of the mounting substrate 100 when viewed in plan from the thickness direction D1 of the mounting substrate 100.

[0242] The metal member 130m is conductive. It includes a plate-shaped first member 131m, a plate-shaped second member 132m, a plate-shaped third member 133m, and a plate-shaped fourth member 134m. The second member 132m and the fourth member 134m face each other in a direction intersecting the thickness direction D1 and aligned with the transmission filter 41 and the power amplifier 61. In Embodiment 3, the first member 131m, the pair of second members 132m, and the third member 133m have the same thickness.

[0243] The first member 131m is provided between the transmission filter 41, which serves as a filter, and the shielding layer 110 in the thickness direction D1 of the mounting substrate 100. The first member 131m is directly connected to a pad (not shown) provided on the connection surface 41a of the transmission filter 41. Furthermore, the first member 131m is electrically connected to the shielding layer 110. Specifically, of the two surfaces 1331 and 1332 of the first member 131m that face each other in the thickness direction D1 of the mounting substrate 100, the surface 1332 that is closer to the mounting substrate 100 is electrically connected to the pad provided on the connection surface 41a of the transmission filter 41. Furthermore, of the two surfaces 1331 and 1332 of the first member 131m, the surface 1331 is covered by the resin layer 120. That is, the resin layer 120 of the high-frequency module 1M according to the third embodiment covers the surface 1321 of the first member 131m.

[0244] The second member 132m and the fourth member 134m intersect with the first member 131m and are connected to the first member 131m. The second member 132m and the fourth member 134m are provided at both ends of the first member 131m along the thickness direction D1 of the mounting substrate 100 (see Figure 14 That is, the second member 132 m and the fourth member 134 m protrude from both ends of the first member 131 m toward the mounting substrate 100 along the thickness direction D1 of the mounting substrate 100 .

[0245] The shielding layer 110 disposed on the side surface of the resin layer 120 is electrically connected to the plate-shaped fourth member 134m (see Figure 14 ).

[0246] The second member 132m is disposed between the transmission filter 41 and the power amplifier 61, which is an electronic component. That is, the portion of the metal member 130m disposed between the transmission filter 41 and the power amplifier 61 includes at least a portion of the second member 132m.

[0247] The third member 133k protrudes from the end of the second member 132m. Specifically, the third member 133m extends from the end connected to the first member 131m, of the two ends of the second member 132m in the thickness direction D1 of the mounting substrate 100 ( Figure 14 The upper end) of different ends ( Figure 14 The third member 133m protrudes in a direction intersecting the thickness direction D1 of the mounting substrate 100 when viewed from above in the thickness direction D1 of the mounting substrate 100. When viewed from above in the thickness direction D1 of the mounting substrate 100, the third member 133m protrudes in the same direction as the direction in which the first member 131m protrudes relative to the second member 132m. The third member 133m is electrically connected to the first main surface 101 of the mounting substrate 100 via the solder 170. Specifically, the third member 133m is electrically connected to the second pad 161 of the plurality of second pads 160 provided on the first main surface 101 of the mounting substrate 100 via the solder 170. Here, the second pad 161 is electrically connected to the first pad 151 of the plurality of first pads 150 via the via conductor 141 of the plurality of via conductors 140. That is, the third member 133k is electrically connected to the first pad 151.

[0248] The metal member 130m of the modification 1 can be applied to the embodiment 1 and modifications 1 to 3, 5 to 6, and 8 of the embodiment 1. The metal member 130m of the modification 1 can be applied to the embodiment 2 and its respective modifications.

[0249] (3.2) Modification 2

[0250] Modification 1 of Embodiment 1 may be applied to the metal member 130k of Embodiment 3. That is, the first member 131k of the metal member 130k may be electrically connected to the transmission filter 41 via another conductive member.

[0251] For example, the first member 131 k according to Modification 2 may be electrically connected to the transmission filter 41 via solder.

[0252] In the second modification, the heat dissipation performance of electronic components such as the transmission filter 41 can also be further improved.

[0253] (3.3) Modification 3

[0254] Modification 2 of Embodiment 1 may be applied to the metal member 130k of Embodiment 3. That is, the thickness of the first member 131k of the metal member 130k may be made thinner than the thicknesses of the second member 132k and the third member 133k.

[0255] In the third modification, the heat dissipation performance of electronic components such as the transmission filter 41 can also be further improved.

[0256] (3.4) Modification 4

[0257] Modification 3 of Embodiment 1 may be applied to the metal member 130k of Embodiment 3. That is, the metal member 130k may not include the third member 133k.

[0258] In this case, regarding the second member 132k of the metal member 130k, one of the two ends of the second member 132k in the thickness direction D1 of the mounting substrate 100, the end that is different from the end connected to the first member 131k, is electrically connected to the first main surface 101 of the mounting substrate 100 via the solder 170. Specifically, the second member 132k is electrically connected to the second pad 161 provided on the first main surface 101 of the mounting substrate 100 via the solder 170.

[0259] In the fourth modification, the heat dissipation performance of electronic components such as the transmission filter 41 can also be further improved.

[0260] (3.5) Modification 5

[0261] Modification 5 or 6 of Embodiment 1 may be applied to the high-frequency module 1K of Embodiment 3. That is, in the mounting substrate 100 of the high-frequency module 1K, electronic components such as the switch 20 may be mounted (arranged) on the second principal surface 102 of the mounting substrate 100 .

[0262] In the fifth modification, the heat dissipation performance of electronic components such as the transmission filter 41 can also be further improved.

[0263] (3.6) Modification 6

[0264] Modification 8 of Embodiment 1 may be applied to the metal member 130k of Embodiment 3. Specifically, when viewed from the thickness direction D1 of the mounting substrate 100 , the third member 133k may protrude in a direction opposite to the direction in which the first member 131k protrudes relative to the second member 132k.

[0265] In the sixth modification, the heat dissipation performance of electronic components such as the transmission filter 41 can also be further improved.

[0266] (3.7) Modification 7

[0267] The metal member 130k of the third embodiment may be used in place of the second metal member 300 in the high-frequency module 1H according to the second embodiment. When the metal member 130k of the third embodiment is used in place of the second metal member 300 in the high-frequency module 1H according to the second embodiment, the various modifications according to the second embodiment may be appropriately combined.

[0268] (Summarize)

[0269] As described above, the high-frequency module (1; 1A to 1H; 1J; 1K; 1M) of the first embodiment includes a mounting substrate (100), a filter (e.g., a transmission filter 41), a resin layer (120), a shielding layer (110), and a metal component (130; 130b; 130c; 130d; 135; 130k; 130m). The mounting substrate (100) has a first main surface (101) and a second main surface (102) facing each other. The filter is arranged on the first main surface (101) of the mounting substrate (100) to allow high-frequency signals to pass through. The resin layer (120) is provided on the first main surface (101) side of the mounting substrate (100) to cover at least a portion of the outer peripheral surface (e.g., outer peripheral surface 41b) of the filter. A shielding layer (110; 110e) is provided on the surface of the resin layer (120) opposite to the mounting substrate (100), covers at least a portion of the resin layer (120), and is connected to the ground. A metal component (130; 130b; 130c; 130d; 135) is arranged on the first main surface (101) of the mounting substrate (100). The metal component (130; 130b; 130c; 130d; 135; 130k; 130m) is connected to the surface of the filter opposite to the mounting substrate (100), the shielding layer (110; 110e), and the first main surface (101) of the mounting substrate (100).

[0270] According to this structure, the heat dissipation performance of electronic components such as filters can be further improved.

[0271] According to the first embodiment, a high-frequency module (1; 1A to 1H; 1J; 1K; 1M) of the second embodiment further includes an electronic component disposed on a first main surface (101) of a mounting substrate (100). The metal member (130; 130b; 130c; 130d; 135; 130k; 130m) has a portion (e.g., a second member 132) disposed between the filter and the electronic component when viewed from above in a thickness direction (D1) of the mounting substrate (100).

[0272] According to this configuration, it is possible to improve the isolation between the filter and the electronic component during communication.

[0273] According to the second embodiment, in a high-frequency module (1; 1A to 1H; 1J; 1K; 1M) of the third embodiment, a metal component (130; 130b; 130c; 130d; 130k; 130m) includes a plate-shaped first component (131; 131b; 131c; 131d; 131k; 131m) and a plate-shaped second component (132; 132b; 132c; 132d; 132k; 132m). The first component (131; 131b; 131c; 131d; 131k; 131m) is provided between the filter and the shielding layer (110; 110e) in a thickness direction (D1) of a mounting substrate (100). The second member (132; 132b; 132c; 132d; 132k; 132m) intersects the first member (131; 131b; 131c; 131d; 131k; 131m). The first member (131; 131b; 131c; 131d; 131k; 131m) is connected to the filter and the shielding layer (100; 100e). When viewed from above in the thickness direction (D1) of the mounting substrate (100), the portion arranged between the filter and the electronic component includes at least a portion of the second member (132; 132b; 132c; 132d; 132k; 132m).

[0274] According to this configuration, the heat dissipation performance of electronic components such as filters can be further improved, and the isolation between the filter and the electronic components during communication can be improved.

[0275] According to the third aspect, in the high-frequency module (1C) of the fourth aspect, the end portion of the second member (132c) is connected to the first main surface (101) via solder (170).

[0276] According to this structure, the mounting area on the first main surface (101) of the mounting substrate (100) can be ensured.

[0277] According to the third embodiment, in a high-frequency module (1; 1A; 1B; 1D to 1H; 1J; 1K; 1M) of a fifth embodiment, the metal member (130; 130b; 130d; 130k; 130m) further includes a plate-shaped third member (133; 133b; 133d; 133k; 133m) protruding from an end portion of the second member (132; 132b; 132d; 132k; 132m). The third member (133; 133b; 133d; 133k; 133m) is connected to the first main surface (101) via solder (170).

[0278] According to this structure, the metal substrate (130; 130b; 130d; 130k; 130m) can be reliably connected (fixed) to the mounting substrate (100).

[0279] According to the fifth embodiment, in the high-frequency module (1; 1A; 1B; 1D to 1H; 1J; 1K; 1M) of the sixth embodiment, when viewed from above in the thickness direction (D1) of the mounting substrate (100), the third member (133; 133b; 133d; 133k; 133m) protrudes from the second member (132; 132b; 132d) in the same direction as the direction in which the first member (131; 131b; 131d; 131k; 131m) protrudes from the second member (132; 132b; 132d; 132k; 132m).

[0280] According to this structure, the metal substrate (130; 130b; 130d; 130k; 130m) can be reliably connected (fixed) to the mounting substrate (100).

[0281] According to any one of the third to sixth aspects, in a seventh aspect of the high-frequency module (1K), a shielding layer (110) covers at least a portion of a side surface of a resin layer (120). The shielding layer (110) disposed on the side surface of the resin layer (120) is electrically connected to at least one end portion (1323) of a plate-shaped first member (131k).

[0282] According to this structure, the heat dissipation performance of electronic components such as filters can be further improved.

[0283] According to any one of the third to sixth aspects, in the high-frequency module (1M) of the eighth aspect, the shielding layer (110) covers at least a portion of a side surface of the resin layer (120). The metal component (130m) further includes a plate-shaped fourth component (134m) facing the second component (132m). The shielding layer (110) disposed on the side surface of the resin layer (120) is electrically connected to the fourth component (134m).

[0284] According to this structure, the heat dissipation performance of electronic components such as filters can be further improved.

[0285] According to any one of the third to eighth aspects, in a high-frequency module (1: 1A to 1H; 1J) of the ninth aspect, the mounting substrate (100) has a pad (e.g., a second pad 162) disposed on the first main surface (101). The filter is connected to the pad via a solder bump (175). When viewed from above in the thickness direction (D1) of the mounting substrate (100), the area of ​​the first member (131; 131b; 131c; 131d) is larger than the area of ​​the pad.

[0286] According to this structure, heat dissipation via the metal member (130; 130b; 130c; 130d) can be promoted.

[0287] In the high-frequency module (1G) of the tenth aspect according to the first aspect or the second aspect, the metal member (130) is a conductive wire (135).

[0288] According to this structure, the conductive wire (135) can be used to further improve the heat dissipation of electronic components such as filters.

[0289] According to the tenth embodiment, in the high-frequency module (1G) of the eleventh embodiment, the mounting substrate (100) has a substrate-side pad (e.g., second pad 162) disposed on the first main surface (101). The filter has a filter-side pad (e.g., pad 180) on a surface to which a wire is connected (e.g., connection surface 41a) that is larger in area than the substrate-side pad. The filter is connected to the substrate-side pad via a solder bump (175). One end of the wire (135) is connected to the filter-side pad.

[0290] According to this structure, heat dissipation via the conductive wire (135) can be promoted.

[0291] In the high-frequency module (1; 1A to 1H; 1J) of the twelfth aspect according to any one of the second to ninth aspects, the electronic component is a reception filter (42) that passes a reception signal.

[0292] According to this configuration, it is possible to improve the isolation between the filter and the electronic component during communication.

[0293] In the high-frequency module (1; 1A to 1H; 1J) of a thirteenth aspect according to any one of the first to twelfth aspects, the filter is a transmission filter (41) that passes a transmission signal that is a high-frequency signal.

[0294] According to this configuration, the heat dissipation performance of the electronic components of the transmission system can be further improved.

[0295] According to any one of the first to thirteenth aspects, a high-frequency module (1; 1A to 1H; 1J) of a fourteenth aspect further comprises a plurality of external connection terminals (200) arranged on a second main surface (102) of a mounting substrate (100). The metal member (130; 130b; 130c; 130d; 135) is connected to an external connection terminal (e.g., a ground terminal 201) among the plurality of external connection terminals (200) that is connected to the ground.

[0296] According to this structure, heat dissipation to the second main surface (102) of the mounting substrate (100) can be further promoted.

[0297] The high-frequency module (1H; 1J) of the fifteenth embodiment comprises a mounting substrate (100), a power amplifier (61), a resin layer (120), a shielding layer (110), and a metal component (e.g., a second metal component 300). The mounting substrate (100) has a first main surface (101) and a second main surface (102) facing each other. The power amplifier (61) is arranged on the first main surface (101) of the mounting substrate (100) and amplifies a transmission signal as a high-frequency signal. The resin layer (120) is arranged on the first main surface (101) side of the mounting substrate (100) and covers at least a portion of the outer peripheral surface of the power amplifier (61). The shielding layer (110) is arranged on the surface of the resin layer (120) opposite to the mounting substrate (100), covers at least a portion of the resin layer (120), and is connected to the ground. The metal component is arranged on the first main surface (101) of the mounting substrate (100). The metal component (second metal component 300) includes a plate-shaped first component (301) and a plate-shaped second component (302). The first component (301) is disposed between the power amplifier (61) and the shielding layer (110). The second component (302) intersects the first component (301). The first component (301) is connected to the power amplifier (61) and the shielding layer (110).

[0298] According to this structure, the heat dissipation of electronic components such as the power amplifier (61) can be further improved.

[0299] The communication device (500) of the 16th mode comprises: a high-frequency module (1; 1A to 1H; 1J; 1K; 1M) of any one of the 1st to 15th modes; and a signal processing circuit (501) for processing a high-frequency signal passing through the high-frequency module (1; 1A to 1H; 1J; 1K; 1M).

[0300] According to this structure, the heat dissipation of electronic components such as filters and power amplifiers (61) can be further improved.

[0301] According to the fifteenth aspect, the high-frequency module (1H; 1J) of the seventeenth aspect further comprises an electronic component disposed on the first principal surface (101) of the mounting substrate (100). The metal member (second metal member 300) has a portion (e.g., second member 302) disposed between the power amplifier (61) and the electronic component when viewed from above in the thickness direction (D1) of the mounting substrate (100).

[0302] According to this configuration, it is possible to improve the isolation between the filter and the electronic component during communication.

[0303] According to the seventeenth embodiment, in the high-frequency module (1H; 1J) of the eighteenth embodiment, the metal component (second metal component 300) has a plate-shaped first component (301) and a plate-shaped second component (302). The first component (301) is arranged between the filter and the shielding layer (110) in the thickness direction (D1) of the mounting substrate (100). The second component (302) intersects with the first component (301). The first component (301) is connected to the power amplifier (61) and the shielding layer (110). When viewed from above in the thickness direction (D1) of the mounting substrate (100), the portion arranged between the power amplifier (61) and the electronic component includes at least a portion of the second component (302).

[0304] According to this structure, the heat dissipation of electronic components such as a power amplifier (61) can be further improved, and the isolation between the filter and the electronic components during communication can be improved.

[0305] According to the eighteenth aspect, in the high-frequency module (1H; 1J) of the nineteenth aspect, the other end of the metal member (second metal member 300) is an end of the second member (302). The end of the second member (302) is connected to the first main surface (101) via solder (171).

[0306] According to this structure, the mounting area on the first main surface (101) of the mounting substrate (100) can be ensured.

[0307] According to the eighteenth embodiment, in the high-frequency module (1H; 1J) of the twentieth embodiment, the metal component (second metal component 300) further includes a plate-shaped third component (303) protruding from an end portion of the second component (302). The third component (303) is connected to the first main surface (101) via solder (171).

[0308] According to this structure, the metal substrate (second metal member 300) can be reliably connected (fixed) to the mounting substrate (100).

[0309] According to the 20th embodiment, in the high-frequency module (1H; 1J) of the 21st embodiment, when viewed from above in the thickness direction (D1) of the mounting substrate (100), the third member (303) protrudes from the second member (302) in the same direction as the direction in which the first member (301) protrudes from the second member (302).

[0310] According to this structure, the metal substrate (second metal member 300) can be reliably connected (fixed) to the mounting substrate (100).

[0311] According to any one of the eighteenth to twenty-first aspects, in the high-frequency module (1H; 1J) of the twenty-second aspect, the mounting substrate (100) has a pad (e.g., a second pad 164) disposed on the first main surface (101). The power amplifier (61) is connected to the pad via a solder bump (176). When viewed from above in the thickness direction (D1) of the mounting substrate (100), the area of ​​the first member (301) is larger than the area of ​​the pad.

[0312] According to this structure, heat dissipation via the metal member (second metal member 300 ) can be promoted.

[0313] Description of Reference Numerals

[0314] 1, 1A, 1B, 1C, 1D, 1E, 1F, 1G, 1H, 1J, 1K, 1M: High-frequency module; 10: Antenna terminal; 20: Switch; 21: Common terminal; 22, 23: Select terminals; 31: First matching circuit; 32: Second matching circuit; 41: Transmit filter; 41a: Connection surface; 41b: Outer surface; 42: Receive filter; 51: Third matching circuit; 52: Fourth matching circuit; 61: Power amplifier; 61a: Connection surface; 61b: Outer surface; 62: Low-noise amplifier; 71: Signal input Terminal; 72: Signal output terminal; 100: Mounting substrate; 101: First main surface; 102: Second main surface; 103: Peripheral surface; 110, 110e: Shielding layer; 120: Resin layer (first resin layer); 121: Main surface; 123: Peripheral surface; 125: Second resin layer; 126: Peripheral surface; 130, 130b, 130c, 130d, 130j, 130k, 130m: Metal component (first metal component); 131, 131b, 131c, 131d, 131k, 131m: First component ; 132, 132b, 132c, 132k, 132m: second member; 132j: partition member; 133, 133b, 133k, 133m: third member; 133j: connecting member; 135: wire; 136: first wire; 137: second wire; 140, 141: via conductor; 150, 151, 152, 155: first pad; 160, 161, 162, 163, 164: second pad; 170, 171: solder; 175, 176: solder bump; 180: solder Disk; 200, 210: external connection terminals; 201, 202, 203: ground terminals; 250: ball bump; 300: second metal component; 301: first component; 302: second component; 303: third component; 310: heat dissipation path conductor; 311: path; 500: communication device; 501: signal processing circuit; 502: RF signal processing circuit; 503: baseband signal processing circuit; 510: antenna; 1311, 1312, 1321, 1322: surfaces; 1323: end; D1: thickness direction.

Claims

1. A high-frequency module comprising: a mounting substrate having a first main surface and a second main surface facing each other; a filter disposed on the first main surface of the mounting substrate and allowing high-frequency signals to pass therethrough; a resin layer provided on the first main surface side of the mounting substrate and covering at least a portion of the outer peripheral surface of the filter; a shielding layer provided on a surface of the resin layer opposite to the mounting substrate, covering at least a portion of the resin layer and connected to the ground; as well as a metal member disposed on the first main surface of the mounting substrate, The metal member is connected to the surface of the filter opposite to the mounting substrate, the shielding layer, and the first main surface of the mounting substrate. The high-frequency module further includes an electronic component disposed on the first main surface of the mounting substrate. The metal member has a portion disposed between the filter and the electronic component when viewed from above in the thickness direction of the mounting substrate. Wherein, the metal component has: a plate-shaped first member, provided between the filter and the shielding layer in the thickness direction of the mounting substrate; and a plate-shaped second member intersecting the first member, Wherein, the first component is connected to the filter and the shielding layer, The portion disposed between the filter and the electronic component when viewed in plan from the thickness direction of the mounting substrate includes at least a portion of the second member.

2. The high-frequency module according to claim 1, wherein An end portion of the second member is connected to the first main surface via solder.

3. The high-frequency module according to claim 1, wherein The metal member further includes a plate-shaped third member protruding from an end portion of the second member. The third member is connected to the first main surface via solder.

4. The high-frequency module according to claim 3, wherein: The third member protrudes from the second member in the same direction as the direction in which the first member protrudes from the second member when viewed in plan from the thickness direction of the mounting substrate.

5. The high-frequency module according to any one of claims 1 to 4, wherein The shielding layer covers at least a portion of a side surface of the resin layer, The shielding layer disposed on a side surface of the resin layer is electrically connected to at least one end portion of the plate-shaped first member.

6. The high-frequency module according to any one of claims 1 to 4, wherein The shielding layer covers at least a portion of a side surface of the resin layer, The metal member further includes a plate-shaped fourth member facing the second member. The shielding layer disposed on a side surface of the resin layer is electrically connected to the fourth member.

7. The high-frequency module according to any one of claims 1 to 4, wherein The mounting substrate has a pad disposed on the first main surface. The filter is connected to the pad via a solder bump, When viewed in plan from the thickness direction of the mounting substrate, the area of ​​the first member is larger than the area of ​​the pad.

8. The high-frequency module according to any one of claims 1 to 4, wherein The electronic component is a reception filter that passes a reception signal.

9. The high-frequency module according to any one of claims 1 to 4, wherein The filter is a transmission filter that passes the transmission signal, which is the high-frequency signal.

10. The high-frequency module according to any one of claims 1 to 4, wherein further comprising a plurality of external connection terminals arranged on the second main surface of the mounting substrate, The metal member is connected to an external connection terminal connected to the ground among the plurality of external connection terminals.

11. A high-frequency module comprising: a mounting substrate having a first main surface and a second main surface facing each other; a filter disposed on the first main surface of the mounting substrate and allowing high-frequency signals to pass therethrough; a resin layer provided on the first main surface side of the mounting substrate and covering at least a portion of the outer peripheral surface of the filter; a shielding layer provided on a surface of the resin layer opposite to the mounting substrate, covering at least a portion of the resin layer and connected to the ground; as well as a metal member disposed on the first main surface of the mounting substrate, The metal member is connected to the surface of the filter opposite to the mounting substrate, the shielding layer, and the first main surface of the mounting substrate. Wherein, the metal component is a wire, The mounting substrate has substrate-side pads arranged on the first main surface. The filter has a filter-side pad having an area larger than that of the substrate-side pad on a surface connected to the lead wire. The filter is connected to the substrate side pad via a solder bump, One end of the wire is connected to the filter-side pad.

12. The high-frequency module according to claim 11, wherein The filter is a transmission filter that passes the transmission signal, which is the high-frequency signal.

13. The high frequency module according to claim 11, wherein further comprising a plurality of external connection terminals arranged on the second main surface of the mounting substrate, The metal member is connected to an external connection terminal connected to the ground among the plurality of external connection terminals.

14. A high-frequency module comprising: a mounting substrate having a first main surface and a second main surface facing each other; a power amplifier disposed on the first main surface of the mounting substrate and amplifying a transmission signal that is a high-frequency signal; a resin layer provided on the first main surface side of the mounting substrate and covering at least a portion of the outer peripheral surface of the power amplifier; a shielding layer provided on a surface of the resin layer opposite to the mounting substrate, covering at least a portion of the resin layer and connected to the ground; as well as a metal member disposed on the first main surface of the mounting substrate, The high-frequency module further includes an electronic component disposed on the first main surface of the mounting substrate. The metal member has a portion disposed between the power amplifier and the electronic component when viewed from above in the thickness direction of the mounting substrate. wherein, in the thickness direction of the mounting substrate, the metal member includes a plate-shaped first member disposed between the power amplifier and the shield layer and a plate-shaped second member intersecting the first member; The first component is connected to the power amplifier and the shielding layer, The portion disposed between the power amplifier and the electronic component when viewed in plan from the thickness direction of the mounting substrate includes at least a portion of the second member.

15. A communication device comprising: The high-frequency module according to any one of claims 1 to 14; and A signal processing circuit processes the high-frequency signal passing through the high-frequency module.

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