High-temperature evaporation equipment for manufacturing nano metal powder and automatic control system for feeding and heating

Abstract

High-temperature evaporation equipment for manufacturing nano metal powder, comprising a water-cooled cylindrical shell, a water-cooled hemispherical shell, a cooling water inlet A, a cooling water storage cavity A, a plasma cathode column, a hemispherical shell cooling water channel, a cooling water outlet A, a plasma anode terminal, a hemispherical shell cooling water channel, a cylindrical shell cooling water channel, and a cathode mounting channel; characterized in that the plasma cathode column comprises a cathode column body, a liquid chamber, a liquid flow hole, a high-temperature-resistant conductive coating C, and a micro water pump; the cathode column body is provided with the high-temperature-resistant conductive coating C outside the body, the cathode column body is provided with the liquid chamber capable of containing liquid and the liquid flow hole capable of flowing liquid inside the body; the micro water pump is provided with a water suction pipe and a water jet pipe; the high-temperature-resistant conductive coating C of the plasma cathode column, the micro water pump, and the high-speed water flow circulation for efficiently cooling the cathode column; the service life of the cathode column is prolonged, the replacement efficiency is reduced; the discharge performance is enhanced, the electric energy is saved, and the production efficiency of the nano metal powder is improved.

Description

TECHNICAL FIELD

[0001] The application relates to a nanometer metal powder production device, in particular to a high-temperature evaporation device for manufacturing nanometer metal powder and an automatic feeding and heating control system. BACKGROUND

[0002] With the development of science and technology and the progress of the times, nanometer metal materials are increasingly applied in the field of high-tech, and nanometer metal powder is widely applied in the fields of antibacterial and virus killing, medical diagnosis and imaging, polishing, 3D printing, catalysis, functional ceramics, electronic components, new energy and the like.

[0003] There are many preparation methods for nanometer metal powder, mainly including physical vapor phase method, electric explosion method, mechanical crushing method, chemical reduction method, high-temperature gas phase reduction method and the like; the physical vapor phase method, also known as evaporation condensation method, is a relatively mature nanometer metal powder manufacturing method, and the particle size of the manufactured nanometer metal powder product reaches 5-1000 nm; in the normal physical vapor phase method, metal materials are heated to high temperature by a high-temperature evaporation device, and then the evaporated metal gas is introduced into a condensing device, and the metal gas is rapidly condensed by inert gas, so as to generate nanometer metal powder with fine particles.

[0004] Since the conventional metal evaporation requires high temperature of several hundred to several thousand degrees, the high-temperature evaporation device has high requirements for high-temperature resistance, and the commonly used high-temperature evaporation device includes a graphite crucible or a ceramic crucible, a water-cooled shell or a ceramic inner wall metal shell, and a heating device; since the high-temperature evaporation device is in a high-temperature working state for a long time during the production of nanometer metal powder, the corrosion of high temperature to the crucible and the inner wall of the furnace shell is very large, so that the service life of the high-temperature evaporation device is very limited, and the service life of the normal high-temperature evaporation device is between 200-300 hours; a method 1 for prolonging the service life of the conventional high-temperature evaporation device is to increase the thickness of the ceramic wall, since increasing the thickness of the ceramic wall of the high-temperature evaporation device will increase the volume of the furnace body, and also increase the corrosion speed of high temperature to the ceramic wall, so that the service life of the high-temperature evaporation device is increased very little; a method 2 for prolonging the service life of the conventional high-temperature evaporation device is to make the furnace body wall into a circulating water cooling shell, since the cooling speed of the circulating water is very fast, a large amount of heating energy is consumed, and the forming effect of metal evaporation is also affected, so that the quality of the nanometer metal powder is poor.

[0005] In the process of producing nano metal powder by plasma arc evaporation method, it is particularly important to master the liquid level height and temperature of the metal solution of high-temperature evaporation equipment. The existing high-temperature evaporation equipment is provided with an observation cylinder, and multiple layers of high-temperature resistant transparent glass are arranged in the observation cylinder. The operator observes the situation in the crucible in the smelting evaporation equipment through the multiple layers of high-temperature resistant transparent glass on the observation cylinder with the naked eye, and adds materials according to the observed melting state of the metal raw materials in the crucible and the distance between the crucible opening end and the solution surface. Since the smelting evaporation temperature is very high, the sensor for measuring the smelting evaporation temperature is often easy to break and inaccurate, which causes inaccurate temperature control of the smelting evaporation equipment and uneven production of nano metal powder particles, which is one of the problems causing poor quality of nano metal powder.

[0006] In addition, due to the long-time high-temperature work of the high-temperature evaporation equipment, the service life of the electrode of the plasma is very limited, and a new electrode needs to be replaced after normal use of 100 hours. Each time the new electrode is replaced, the machine needs to be stopped, cooled, disassembled, reassembled, and started again, which not only affects the production progress, but also requires technicians to repeat the tedious assembly and disassembly, and also consumes funds to manufacture new electrodes, which seriously affects the production efficiency and production benefit of nano metal powder.

[0007] In addition, in the conventional production of nano metal powder, the high-temperature evaporation equipment is in a sealed state during work, and each time the material is added, the tedious process of stopping heating, depressurizing, opening the feeding port, feeding, closing the feeding port, and reheating needs to be experienced, which is very low in production efficiency and also wastes a lot of heating energy. In addition, the process from heating to stopping heating and restarting heating will experience the process from low temperature to gradually high temperature and then from high temperature to gradually low temperature, so that the evaporation temperature of the evaporation furnace is unstable and unbalanced during the production of nano metal powder, leading to uneven particle size of nano metal powder and causing the serious problem of unstable quality of nano metal powder.

[0008] Therefore, in the production of nano metal powder, an advanced high-temperature evaporation equipment with moderate cooling performance and certain heat preservation performance, long service life and long-time continuous high-efficiency temperature production equipment and system are urgently needed. A feeding device with high automation and high production efficiency and a high-temperature evaporation equipment for manufacturing nano metal powder and an automatic control system for feeding and heating are also needed.

[0009] In order to solve the above-mentioned urgent problems, we actively organize a technical team, summarize years of production experience and practical work lessons, and combine related technical theories to conduct in-depth exploration and research. A large amount of creative work such as design, test, trial, optimization and improvement of the high-temperature evaporation equipment, feeding device and control system for producing nano metal powder has been carried out. SUMMARY

[0010] The application provides a high-temperature evaporation device for manufacturing nano metal powder and an automatic feeding and heating control system, and can solve the problems mentioned in the background art.

[0011] The technical scheme for solving the technical problems of the application is:

[0012] 1. The combination of water-cooled wall and ceramic wall is used to solve the problems of poor cooling effect of metal shell ceramic inner wall furnace of high-temperature evaporation equipment, low energy efficiency of metal shell water-cooled wall furnace and short service life; 2. In order to solve the problems of easy corrosion of water-cooled crucible inner wall of high-temperature evaporation equipment by high temperature and short service life, the crucible is designed as a pot body composed of multiple wall petals, and the wall petals are designed as cooling water channel structure, further, in order to make the wall petals have better heat dissipation performance and service life, the inner lining heat sink is arranged in the water channel of the wall petals, the outer wall of the wall petals is provided with outer high-temperature-resistant sheet, and the surface of the high-temperature-resistant sheet is further coated with high-temperature-resistant material; 4. In order to solve the problems of easy corrosion of water-cooled crucible bottom wall of high-temperature evaporation equipment by high temperature and short service life, the water-cooled channel structure is arranged on the bottom wall of the crucible; 5. In order to solve the problems of easy corrosion of plasma negative electrode of high-temperature evaporation equipment by high temperature, short service life and frequent replacement, and low production efficiency of nano metal powder, the cooling jet technology is used for online continuous cooling of the plasma negative electrode, that is, the jet channel and jet device are arranged in the interior of the plasma electrode, the high-speed coolant jet is used for online efficient cooling of the plasma electrode, the plasma electrode can continuously withstand high-temperature corrosion for a long time, so that the service life of the plasma negative electrode is prolonged; 6. In order to solve the problem of poor flow efficiency of water cavity of water-cooled wall furnace of high-temperature evaporation equipment, the water collecting cavity is arranged on the water-cooled shell; 7. In order to solve the problem of short service life of ceramic wall of high-temperature evaporation equipment caused by high-temperature corrosion of smelting, the regenerated ceramic grinding powder is mixed with ceramic and diatomite; 8. In order to solve the problems of insufficient balanced heating temperature of plasma of high-temperature evaporation equipment, poor metal powder evaporation effect and poor metal powder evaporation effect caused by high-frequency heating limited to inductance area of coil, the composite heating mode of synchronous heating of plasma heating and high-frequency heating is adopted; 9. In order to solve the problem of short service life of plasma positive electrode of high-temperature evaporation equipment and low production efficiency of nano metal powder, the circulating water flow is used for online continuous cooling of the plasma negative electrode, that is, the circulating channel is arranged in the interior of the crucible bottom, and the circulating water source is connected, so that the plasma positive electrode and the crucible bottom can continuously and effectively work for a long time; 10. In order to solve the problem of low production efficiency caused by stopping heating for feeding in the production of nano metal powder, the metal material feeding device composed of double gas leakage funnel, electromagnetic valve and gravity sensor is adopted, which can realize online feeding without stopping heating, and in order to further improve the feeding efficiency and production quality, the weighing hopper is arranged to accurately measure the amount of feeding, and the radar liquid level meter is used to detect the liquid level information of the metal solution in the high-temperature evaporation equipment to automatically control the feeding amount of the single-chip microcomputer, so that the high-temperature evaporation equipment can continuously and efficiently produce nano metal powder; 11.In order to solve the problem of temperature control of the smelting and evaporation equipment, the infrared thermometer, the heat insulation structure and the single-chip microcomputer controller are combined to form a heating automatic control, so that the production heating of the nano metal powder is automatically controlled, and the smelting temperature of the smelting and evaporation equipment is accurately and stably controlled.

[0013] The nano metal powder production system comprises a high-temperature evaporation equipment, an exchange, a computer, a metal material feeding device, a water circulation cooler A, a water circulation cooler B, a pressure relief valve, an inert gas input device, a high-frequency generator, a plasma power supply, a metal vapor condensing device, a metal powder collecting device, a quartz glass plate, nitrogen and a metal solution body.

[0014] The high-temperature evaporation equipment comprises a water-cooled barrel shell, a water-cooled hemispherical shell, an evaporation chamber, a cooling water inlet A, a connecting flange, a fastening bolt, an observation channel, a metal material input channel, a cooling water cavity A, a cooling water inlet C, a plasma cathode column, a cooling water inlet D, a metal vapor channel, an evaporation chamber inner wall, an inert gas inlet channel, a heat preservation wall, a hemispherical shell cooling water channel, a shell connecting ceramic, a cooling water cavity B, a cooling water inlet B, a crucible wall, a high-frequency inductor coil, a support frame, a pressure relief port, a cooling water outlet A, a plasma anode connecting column, an anode insulation sleeve, a crucible bottom, a cooling water outlet B, a wall connecting ceramic, a hemispherical shell cooling water channel, a barrel shell cooling water channel, a ceramic fiber composite hoop, a composite heat preservation material and a cathode mounting channel.

[0015] The metal material feeding device comprises a material collecting hopper, an electromagnetic valve a, a pipe A, a pipe B, a pipe C, a weighing hopper, 3-6 gravity sensors, a material leakage guide pipe, a weighing support, a fixing frame, a material collecting hopper support, an electromagnetic valve b, an electromagnetic valve c, an air separation hopper A, an electromagnetic valve d, an air separation hopper B, an electromagnetic valve e and a metal material input channel.

[0016] The feeding and heating automatic control system for manufacturing the nano metal powder comprises a computer, an exchange, a single-chip microcomputer controller, a radar liquid level meter, an infrared thermometer, a metal material feeding device, a high-frequency generator, a plasma power supply and a high-temperature evaporation equipment.

[0017] Further, the water circulation cooler A is connected with the cooling water outlet B and the cooling water inlet A and the cooling water inlet B to circulate water, when the nano metal powder production system works, the water is circulated through the water circulation cooler A, the cooling water inlet A, the cooling water inlet B, the barrel shell cooling water channel, the cooling water outlet B and the water circulation cooler A, so that the water-cooled barrel shell is cooled.

[0018] The water circulation cooler B is connected with the cooling water outlet A and the cooling water inlets C and D, and when the nano metal powder production system is working, water flows into the hemispherical shell cooling water channel through the cooling water inlets C and D and then is input into the water circulation cooler B through the cooling water outlet A, so that the water-cooled hemispherical shell is cooled;

[0019] The cathode installation channel is provided with a plasma cathode column, and the plasma cathode column is electrically connected with a plasma power supply; the plasma cathode column is connected with the cooling water inlet D in water connection;

[0020] The infrared thermometer device is connected with the single-chip microcomputer controller in the observation channel and is used for detecting the heating temperature of the evaporation chamber;

[0021] The radar liquid level meter device is connected with the single-chip microcomputer controller in the observation channel and is used for detecting the liquid level height of the metal solution in the multiple crucible petals;

[0022] Multiple quartz glass plates are arranged in the observation channel, the distance between the quartz glass plates is 5-25 mm, and the space with the distance of 5-25 mm between the quartz glass plates is filled with nitrogen;

[0023] The metal material feeding device is connected with the metal material input channel and is connected with the single-chip microcomputer controller; the metal material feeding device is used for feeding and feeding control;

[0024] The metal vapor channel is connected with a metal vapor condensing device, the metal vapor condensing device is connected with a metal powder collecting device; the metal vapor is transported to the metal vapor condensing device through the metal vapor channel, condensed into nano metal powder, and then collected by the metal powder collecting device;

[0025] The inert gas input device is connected through an inert gas inlet channel and is used for inputting inert gas for nano metal powder production;

[0026] One end of the plasma power supply is connected with a conductive terminal of the plasma cathode column, and one end of the plasma power supply is connected with a conductive terminal of a plasma anode terminal; the plasma power supply is used for generating a plasma heating effect and providing a basic heating source for nano metal powder production;

[0027] The high-frequency generator is connected with a high-frequency inductor coil; the high-frequency generator is used for generating an inductive heating effect and combining with the plasma heating source to generate a composite heating field, so that the metal material to be processed is melted at a high speed and evaporated uniformly, thereby making the powder particles for producing the nano metal powder uniform, the single particle ≤10 nm, the quality of the nano metal powder good, and the production efficiency high.

[0028] Further, the water-cooled cylindrical shell of the high-temperature evaporation equipment for manufacturing nanometer metal powder is a cylindrical shell composed of two layers of metal walls, and the hollow part is a cylindrical shell cooling water channel for cooling water or other cooling fluid to cool the shell; the upper part of the cylindrical shell cooling water channel is provided with a cooling water storage cavity B; the upper end of the water-cooled cylindrical shell is provided with a connecting flange, the lower left half of the ring of the connecting flange is provided with 1-4 cooling water inlets A, and the lower right half of the ring of the connecting flange is provided with 1-4 cooling water inlets B; the bottom of the cylindrical shell is provided with a cooling water outlet B connected to the cylindrical shell cooling water channel and a pressure relief port passing through the two layers of metal barrel walls to isolate the cylindrical shell cooling water channel, and a cooling water outlet A passing through the two layers of metal barrel walls to isolate the cylindrical shell cooling water channel;

[0029] The water-cooled semi-spherical shell is composed of two layers of metal walls, and the hollow part is a semi-spherical shell cooling water channel for cooling water or other cooling fluid to cool the shell; the upper part of the semi-spherical shell cooling water channel is provided with a cooling water storage cavity A, and the lower part is provided with a water inlet; the upper surface of the cooling water storage cavity A is provided with 1-2 cooling water inlets C and 1-2 cooling water inlets D; the lower end of the water-cooled semi-spherical shell is provided with a connecting flange, and the inner edge of the lower end of the water-cooled semi-spherical shell is provided with a water inlet connected to the semi-spherical shell cooling water channel; the upper middle part of the water-cooled semi-spherical shell is provided with a cathode installation channel for installing a plasma cathode column; the left periphery of the cathode installation channel is provided with 1-2 cooling water inlets C, and the right periphery is provided with 1-2 cooling water inlets D; the lower part of the cooling water inlet C is provided with a metal material input channel; the lower part of the metal material input channel is provided with an observation channel for installing an infrared thermometer and a radar liquid level meter; the lower part of the cooling water inlet D is provided with a metal vapor channel; the lower part of the metal vapor channel is provided with an inert gas inlet channel.

[0030] Further, the high-temperature evaporation device plasma cathode column includes a cathode column body, a liquid chamber, a liquid flow hole, a high-temperature resistant conductive coating C, a micro water pump, a water suction pipe, and a water jet pipe; characterized in that: the cathode column body is externally provided with a high-temperature resistant conductive coating C, and the cathode column body is internally provided with a liquid chamber capable of containing liquid and a liquid flow hole capable of flowing liquid; the liquid chamber and the two liquid flow holes can flow cooling water or cooling liquid; a micro water pump is arranged at the upper part of the liquid chamber and the two liquid flow holes, the micro water pump is provided with a water suction pipe and a water jet pipe, the water jet pipe is in the space of the liquid chamber, and the water suction pipe is connected with a cooling water inlet D for water flow; the plasma cathode column is characterized in that: the liquid chamber and the liquid flow hole of the plasma cathode column play a role in flowing cooling water, and the micro water pump, the water suction pipe, and the water jet pipe play a role in flowing water at high speed, thereby efficiently cooling the cathode column body; the high-temperature resistant conductive coating C further increases the high-temperature resistance and conductivity of the plasma cathode column, thereby prolonging the effective working time and service life of the plasma cathode column.

[0031] Further, the metal material feeding device is provided with a material collecting hopper support at the upper part of the fixed frame and a weighing support at the middle part, the material collecting hopper support is provided with a material collecting hopper, the material collecting hopper is provided with an electromagnetic valve a below, and the electromagnetic valve a is provided with a through pipe A below; the weighing support is provided with an electromagnetic valve b above, and the electromagnetic valve b is provided with a weighing hopper above; the upper end of the weighing hopper surrounds the through pipe A below the electromagnetic valve a; the weighing support is provided with a through pipe B below and connected with an electromagnetic valve c, the electromagnetic valve c is provided with a gas separation hopper A below, the gas separation hopper A is provided with an electromagnetic valve d below and connected with a gas separation hopper B, and the gas separation hopper B is provided with an electromagnetic valve e below; the electromagnetic valve e is provided with a through pipe C below and connected with a metal material input channel;

[0032] Further, the single-chip microcomputer controller of the feeding and heating automatic control system for manufacturing nano metal powder includes a CPU chip, a ROM memory, a RAM memory, a power module, a network module, a MAX232 module, an A / D input module, and a thyristor output module; the computer includes CPU programming software and nano metal powder feeding and heating automatic control software; the CPU programming software is used for programming the CPU program of the single-chip microcomputer;

[0033] The interface of the nano metal powder feeding and heating automatic control software includes total power control, plasma heating control, inductive heating control, furnace temperature setting of the high-temperature evaporation device, furnace temperature display of the high-temperature evaporation device, feeding setting, and electromagnetic valve control;

[0034] The infrared thermometer and the radar liquid level meter device are arranged in the high-temperature evaporation device and connected with the A / D input module of the single-chip microcomputer controller; the gravity sensor device is arranged at the lower end of the electromagnetic valve a of the metal material feeding device and connected with the A / D input module of the single-chip microcomputer controller;

[0035] The heating automatic control method of the feeding automatic control system for manufacturing nanometer metal powder;

[0036] The infrared thermometer collects the temperature information of the high-temperature evaporation equipment and transmits the information to the single-chip microcomputer controller, and the single-chip microcomputer controller processes the information transmitted by the infrared thermometer; when the temperature of the high-temperature evaporation equipment sensed by the infrared thermometer is lower than 1025-2255 DEG C, the CPU sends a temperature rising command signal to the thyristor output module, and the thyristor output module controls the high-frequency generator and the plasma power supply to increase the heating power; when the temperature of the high-temperature evaporation equipment sensed by the infrared thermometer is higher than 1125-2355 DEG C, the CPU sends a temperature lowering command signal to the thyristor output module, and the thyristor output module controls the high-frequency generator and the plasma power supply to reduce the heating power; the single-chip microcomputer controller controls the high-frequency generator and the plasma power supply to make the temperature range of the high-temperature evaporation equipment between 300-5000 DEG C, and the control optimized temperature is set according to the melting point of the metal material to be processed.

[0037] The feeding automatic control method and steps of the feeding automatic control system for manufacturing nanometer metal powder;

[0038] The radar liquid level meter detects the metal liquid level information of the high-temperature evaporation equipment online and transmits the information to the single-chip microcomputer controller, and the single-chip microcomputer controller processes the information transmitted by the radar liquid level meter; when the metal liquid level height of the high-temperature evaporation equipment is lower than the set range, the single-chip microcomputer controller controls the feeding device to feed the high-temperature evaporation equipment, and when the radar liquid level meter detects that the metal liquid level height of the high-temperature evaporation equipment is higher than the set range, the feeding stops; the metal liquid level height of the high-temperature evaporation equipment is automatically kept in the set range; so as to ensure the stable evaporation of the metal vapor of the high-temperature evaporation equipment and achieve the purpose of continuous and efficient uninterrupted production of metal powder;

[0039] The beneficial effects of the application are:

[0040] 1. Since the high-temperature evaporation equipment adopts the furnace body structure combining the water-cooled wall and the ceramic wall, the high-temperature evaporation equipment can save electric energy, improve product quality and production efficiency when producing nanometer metal powder, and can bring the beneficial effects of reducing production cost and improving economic benefit to the production enterprise, and bring the beneficial effects of reducing environmental pollution and saving energy to the society;

[0041] 2. Because the crucible of the high-temperature evaporation equipment is designed as a pot body composed of multiple wall petals, and the wall petals are designed as a cooling water channel structure, and the inner side of the water channel of the wall petals is provided with heat dissipation fins, and the outer wall of the wall petals is provided with high-temperature resistant fins, and the surface of the high-temperature resistant fins is coated with high-temperature resistant material, the crucible has stable performance and long service life, which can bring the beneficial effects of reducing production costs and improving economic benefits to nano-metal powder production enterprises;

[0042] 3. Because the crucible bottom wall of the high-temperature evaporation equipment is equipped with a water-cooling channel structure, the crucible bottom has increased cooling performance, reduced crucible bottom maintenance costs, and extended crucible bottom service life; this can bring beneficial effects to nano-metal powder production enterprises, such as reducing production costs and improving economic benefits.

[0043] 4. Due to the high temperature resistance and good conductivity of the high-temperature conductive coating C of the plasma cathode column in the high-temperature evaporation equipment, the liquid chamber and liquid flow holes facilitate the flow of cooling water, and the micro water pump, suction pipe, and jet pipe enable high-speed water flow, thus efficiently cooling the cathode column. This extends the service life of the cathode column, reduces replacement efficiency, enhances discharge performance, saves energy, reduces cathode column replacement costs, and extends the service life of the cathode column, thus improving the production efficiency and product quality of nano-metal powder.

[0044] 5. Because the hemispherical shell cooling water channel of the high-temperature evaporation equipment has a cooling water accumulation chamber A and the cylindrical shell cooling water channel has a cooling water accumulation chamber B, the accumulated water can be effectively and evenly distributed to the hemispherical shell cooling water channel and the cylindrical shell cooling water channel. This results in high cooling efficiency in the hemispherical shell cooling water channel and the cylindrical shell cooling water channel, which is conducive to the evaporation of metal vapor, thereby improving the production quality of nano-metal powder; increasing the service life of the high-temperature evaporation equipment; and reducing the production cost of nano-metal powder.

[0045] 6. Because the insulation wall of the high-temperature evaporation equipment is made of recycled ceramic powder combined with ceramic and diatomaceous earth, the insulation wall is more resistant to high temperatures, has a longer service life, and is easy to disassemble. The composite insulation material is more resistant to high temperatures and more breathable than ceramic, has a longer service life, and is easy to disassemble and reuse. Furthermore, because the composite insulation material is made by mixing 70-150 mesh ceramic clay particles, 60-200 mesh recycled ceramic particles, and 150-300 mesh diatomaceous earth particles, it has better high-temperature resistance, extends the service life of the high-temperature evaporation equipment, reduces the production cost of nano-metal powder, and improves production efficiency. It also saves energy and reduces environmental pollution.

[0046] 7. The high-temperature evaporation equipment adopts the heating mode of combining plasma heating with high-frequency heating, so that the evaporation gas is uniformly distributed and the particle size is uniform when the high-temperature evaporation equipment produces the nano metal powder, thereby the product quality of the nano metal powder is stable, and the production efficiency is high;

[0047] 8. The metal feeding device adopts double gas isolation hoppers and electromagnetic valve control, so that the feeding of the evaporation furnace can be realized on-line without stopping the heating of the evaporation furnace, the feeding efficiency of the evaporation furnace and the production quality of the nano metal powder are improved, the weighing hopper can accurately measure the feeding amount and automatically control the metal solution level, the high-temperature evaporation equipment can continuously and uninterruptedly produce the nano metal powder with high efficiency, and the particle size of the nano metal powder is uniform and the quality is stable;

[0048] 9. In particular, the melting and evaporation temperature of the high-temperature evaporation equipment is stable due to the automatic control of feeding and heating, so that the particle size of the nano metal powder is uniform and the quality is excellent and stable, energy is saved, production cost is reduced, and the production efficiency of the nano metal powder is high. BRIEF DESCRIPTION OF DRAWINGS

[0049] Figure 1 It is a schematic diagram of the application of the present application in a nano metal powder production system.

[0050] Figure 2 It is a structure sectional view of the high-temperature evaporation equipment for manufacturing nano metal powder.

[0051] Figure 3 It is a detailed assembly connection schematic diagram of the application of the high-temperature evaporation equipment in the nano metal powder production system.

[0052] Figure 4 It is a block diagram of the feeding and heating automatic control system for manufacturing nano metal powder of the present application.

[0053] Figure 5 It is a structure diagram of the metal feeding device.

[0054] Figure 6 It is a structure relationship and connection schematic diagram of the internal structure of the weighing hopper and the electromagnetic valve b, the gravity sensor, the pipe A, the pipe B, the material leakage guide pipe, the weighing support.

[0055] Figure 7 It is a combination structure diagram of the crucible wall flap, the crucible bottom, the wall flap connection ceramic, and the ceramic fiber composite hoop.

[0056] Figure 8 It is a combination structure sectional view of the crucible wall flap, the crucible bottom, the wall flap connection ceramic, and the ceramic fiber composite hoop.

[0057] Figure 9 It is a structure perspective view of the crucible wall flap.

[0058] Figure 10 for Figure 9 EE-directed sectional view.

[0059] Figure 11 for Figure 10 Enlarged view of part I.

[0060] Figure 12 for Figure 10 , Figure 11 FF sectional view

[0061] Figure 13 This is a three-dimensional view of the crucible bottom.

[0062] Figure 14 for Figure 13 HH sectional view.

[0063] Figure 15 This is a structural diagram of a plasma cathode column.

[0064] The diagram is labeled as follows: 1. Water-cooled cylindrical shell; 2. Evaporation chamber; 3. Cooling water inlet A; 4. Connecting flange; 5. Fastening bolt; 6. Observation channel; 7. Water-cooled hemispherical shell; 8. Metal material input channel; 9. Cooling water accumulation chamber A; 10. Cooling water inlet C; 11. Plasma cathode column; 12. Cooling water inlet D; 13. Metal vapor channel; 14. Inner wall of evaporation chamber; 15. Inert gas inlet channel; 16. Insulation wall; 17. Shell connecting ceramic; 18. Cooling water accumulation chamber B; 19. Cooling water inlet B; 20. Crucible wall flap; 21. Metal solution; 22. High-frequency inductor coil; 23. Support frame; 24. Pressure relief port; 25. Cooling water outlet A; 26. Plasma anode terminal; 261. 27. Anode insulating sleeve; 28. Crucible bottom; 29. ​​Cooling water outlet B; 30. Ceramic connecting piece for crucible wall; 31. Hemispherical shell cooling water channel; 32. Water inlet; 33. Cylindrical shell cooling water channel; 34. Ceramic fiber composite hoop; 35. Composite insulation material; 36. Cathode mounting channel; 37. Inert gas input device; 38. Water circulation cooler A; 39. Water circulation cooler B; 40. Pressure relief valve; 41. High frequency generator; 42. Infrared thermometer; 43. Metal material feeding device; 44. Plasma power supply; 45. Metal vapor condensation device; 46. Metal powder collection device; 47. Microcontroller controller; 48. Radar level gauge; 49. Quartz glass plate; 40. Nitrogen; 100. High temperature evaporation equipment;

[0065] The diagram is labeled as follows: 11-1. Cathode column; 11-2. Liquid chamber; 11-3. Liquid flow hole; 11-4. High-temperature resistant conductive coating C; 11-5. Miniature water pump; 11-6. Water jet pipe; 11-7. Water suction pipe;

[0066] The reference signs in the figure are: 20-1. Arc wall passage; 20-2. Outer arc wall; 20-3. Inner arc wall; 20-4. Side wall; 20-5. Connecting bolt; 20-6. Inner lining heat dissipation fin; 20-7. Inner temperature-resistant fin; 20-8. High-temperature-resistant coating;

[0067] The reference signs in the figure are: 27-1 ceramic upper ring layer; 27-2 cooling passage opening; 27-3 high-temperature-resistant conductive coating B; 27-4 ceramic inner ring skeleton; 27-5 plasma positive electrode; 27-6 ceramic middle disc; 27-7 ceramic bottom disc; 27-8 ceramic body cooling passage; 27-9 cooling ceramic tube; 27-10 cooling ceramic pipe; 27-11 conductor connecting hole; 27-12 hollow ceramic column; 27-13 outer ceramic wall; 27-14 ceramic tooth spacing;

[0068] The reference signs in the figure are: 411. Aggregate hopper; 412. Solenoid valve a; 4131. Pipe A; 4132. Pipe B; 4133. Pipe C; 414. Weighing hopper; 4141. Gravity sensor; 4142. Leakage hanging pipe; 4143. Weighing support; 4144. Fixed frame; 4145. Aggregate hopper support; 415. Solenoid valve b; 416. Solenoid valve c; 417. Air separation hopper A; 418. Solenoid valve d; 419. Air separation hopper B; 410. Solenoid valve e; 8. Metal material input channel. Embodiment

[0069] The present application will be described in detail below in conjunction with the drawings and examples.

[0070] In Figure 1 , Figure 3 A nano metal powder production system: comprising a high-temperature evaporation device (100), a switch, a computer, a water circulation cooler A (36), a water circulation cooler B (37), a pressure relief valve (38), an inert gas input device (35), a high-frequency generator (39), an infrared thermometer (40), a metal material feeding device (41), a plasma power supply (42), a metal vapor condensing device (43), a metal powder collecting device (44), a single-chip microcomputer controller (45), a radar liquid level meter (46), a quartz glass plate (47), nitrogen (48), and a metal solution body (21).

[0071] In Figure 5The metal material feeding device (41) includes a material collection hopper (411), a solenoid valve a (412), a through pipe A (4131), a through pipe B (4132), a through pipe C (4133), a weighing hopper (414), 3-6 gravity sensors (4141), a material leakage guide pipe (4142), a weighing bracket (4143), a fixing frame (4144), a material collection hopper bracket (4145), a solenoid valve b (415), a solenoid valve c (416), an air-blocking hopper A (417), a solenoid valve d (418), an air-blocking hopper B (419), a solenoid valve e (410), and a metal material input channel (8).

[0072] The single-chip microcontroller (45), radar level gauge (46), infrared thermometer (40), metal material feeding device (41), high-temperature evaporation equipment (100), switch, and computer constitute an automatic feeding and heating control system for manufacturing nano-metal powder.

[0073] exist Figure 5 The automatic control system for feeding and heating to manufacture nano-metal powder includes a computer, a switch, and a single-chip microcomputer controller. Its features include: a radar level gauge, an infrared thermometer, a metal material feeding device, a high-frequency generator, a plasma power supply, and a high-temperature evaporation device. The metal material feeding device includes a collecting hopper, solenoid valve a, a weighing hopper, a gravity sensor, solenoid valve b, solenoid valve c, an air-sealing hopper A, solenoid valve d, an air-sealing hopper B, and solenoid valve e.

[0074] exist Figure 2 The high-temperature evaporation equipment (100) for manufacturing nano-metal powder includes a water-cooled cylindrical shell (1), a water-cooled hemispherical shell (7), an evaporation chamber (2), a cooling water inlet A (3), a connecting flange (4), fastening bolts (5), an observation channel (6), a metal material input channel (8), a cooling water accumulation chamber A (9), a cooling water inlet C (10), a plasma cathode column (11), a cooling water inlet D (12), a metal vapor channel (13), an inner wall of the evaporation chamber (14), an inert gas inlet channel (15), an insulation wall (16), and a cooling water channel (30) for the hemispherical shell. , Shell connecting ceramic (17), Cooling water cavity B (18), Cooling water inlet B (19), Crucible wall flap (20), High frequency inductor coil (22), Support frame (23), Pressure relief port (24), Cooling water outlet A (25), Plasma anode terminal (26), Anode insulating sleeve (261), Crucible bottom (27), Cooling water outlet B (28), Wall flap connecting ceramic (29), Hemispherical shell cooling water channel (30), Cylindrical shell cooling water channel (31), Ceramic fiber composite hoop (32), Composite insulation material (33), Cathode installation channel (34).

[0075] Further, the high-temperature evaporation device is provided with a water circulation cooler A (36) connected with the cooling water outlet B (28) and the cooling water inlet A (3) and the cooling water inlet B (19), when the nano metal powder production system is working, water flows through the water circulation cooler A (36) and enters the barrel shell cooling water channel (31) through the cooling water inlet A (3) and the cooling water inlet B (19), and then is input to the water circulation cooler A (36) for circulation, so that the water-cooled barrel shell (1) is cooled; the water circulation cooler B (37) is connected with the cooling water outlet A (25) and the cooling water inlet C (10) and the cooling water inlet D (12), when the nano metal powder production system is working, water flows through the water circulation cooler B (37) and enters the hemispherical shell cooling water channel (30) through the cooling water inlet C (10) and the cooling water inlet D (12), and then is input to the water circulation cooler B (37) for circulation, so that the water-cooled hemispherical shell (7) is cooled; the cathode installation channel (34) is provided with a plasma cathode column (11), the plasma cathode column (11) is electrically connected with a plasma power supply (42); the plasma cathode column (11) is connected with the cooling water inlet D (12); the infrared thermometer (40) is arranged in the observation channel (6) and connected with the single-chip microcomputer controller (45), and is used for detecting the heating temperature of the evaporation chamber (2); the radar liquid level meter (46) is arranged in the observation channel (6) and connected with the single-chip microcomputer controller (45), and is used for detecting the liquid level height of the metal solution (21) in the plurality of crucible petals (20); a plurality of quartz glass plates (47) are arranged in the observation channel (6), the distance between the quartz glass plates (47) is 5-25 mm, and nitrogen gas (48) is filled in the space with a distance of 5-25 mm between the quartz glass plates (47); the nitrogen gas (48) filled in the space between the quartz glass plates (47) further improves the temperature insulation effect, and better protects the infrared thermometer and the radar liquid level meter.

[0076] The metal material feeding device (41) is connected with the metal material input channel (8) and connected with the single-chip microcomputer controller (45); and is used for feeding and feeding control;

[0077] The metal vapor channel (13) is connected with the metal vapor condensing device (43), the metal vapor condensing device (43) is connected with the metal powder collecting device (44); the metal vapor is transported to the metal vapor condensing device (43) through the metal vapor channel (13) to condense into nano metal powder, and then is collected by the metal powder collecting device (44);

[0078] The inert gas input device (35) is connected through the inert gas inlet channel (15) and functions to input inert gas during the production of the nano metal powder;

[0079] One end of the plasma power source (42) is connected with the conductive terminal of the plasma cathode column (11) and the other end is connected with the conductive terminal of the plasma anode terminal post (26); and the function is to generate plasma heating effect with the inert gas and provide basic heating source for the production of the nano metal powder;

[0080] The high frequency generator (39) is connected with the high frequency inductor coil (22); and the function is to generate inductive heating effect and combine with the plasma heating source to generate a composite heating field, so that the metal material to be processed is melted at a high speed and evaporated uniformly, thereby making the powder particle size of the produced nano metal powder uniform, the single particle ≤10 nm, the quality of the nano metal powder good, and the production efficiency high.

[0081] Further, in the Figure 2 high temperature evaporation equipment (100) for producing nano metal powder, the water-cooled cylindrical shell (1) is a cylindrical shell composed of two layers of metal walls, and the hollow is a cylindrical shell cooling water channel (31) for cooling water or other cooling fluid to pass through to cool the shell; the upper part of the cylindrical shell cooling water channel (31) is provided with a cooling water storage cavity B (18); the upper end of the water-cooled cylindrical shell (1) is provided with a connecting flange (4), the lower left half of the connecting flange (4) is provided with 1-4 cooling water inlets A (3), and the lower right half of the connecting flange (4) is provided with 1-4 cooling water inlets B (19); the bottom of the cylindrical shell (1) is provided with a cooling water outlet B (28) connected with the cylindrical shell cooling water channel (31) and a pressure relief port (24) passing through the two layers of metal barrel walls to isolate the cylindrical shell cooling water channel (31), and is also provided with a cooling water outlet A (25) passing through the two layers of metal barrel walls to isolate the cylindrical shell cooling water channel (31);

[0082] The water-cooled hemispherical shell (7) is composed of two layers of metal walls, and the hollow is a hemispherical shell cooling water channel (30) for cooling water or other cooling fluid to pass through the shell to produce a cooling effect; the upper part of the hemispherical shell cooling water channel (30) is provided with a cooling water accumulation cavity A (9), and the lower part is provided with a water inlet (301); the upper surface of the cooling water accumulation cavity A (9) is provided with 1-2 cooling water inlets C (10) and 1-2 cooling water inlets D (12); the outer edge of the lower end of the water-cooled hemispherical shell (7) is provided with a connecting flange (4), and the inner edge of the lower end of the water-cooled hemispherical shell (7) is provided with a water inlet (301) connected to the hemispherical shell cooling water channel (30); a cathode mounting channel (34) for mounting a plasma cathode column (11) is arranged at the upper middle part of the water-cooled hemispherical shell (7); the left periphery of the cathode mounting channel (34) is provided with 1-2 cooling water inlets C (10), and the right periphery is provided with 1-2 cooling water inlets D (12); a metal material input channel (8) is arranged at the lower part of the cooling water inlet C (10); an observation channel (6) is arranged at the lower part of the metal material input channel (8), which is used for device infrared thermometer (40), radar liquid level meter (46); a metal vapor channel (13) is arranged at the lower part of the cooling water inlet D (12); the lower part of the metal vapor channel (13) is provided with an inert gas inlet channel (15).

[0083] In Figure 7 , Figure 8 , Figure 2 , the crucible petals (20) and the crucible bottom (27), the petal connecting ceramic (29), and the ceramic fiber composite hoop (32) form a pot-shaped structure arranged in the water-cooled cylindrical shell (1); N crucible petals (20) are arranged on the crucible bottom (27), and the crucible petals (20) are spaced to form a conical barrel shape, the spacing distance of the crucible petals (20) is 8-32mm, and the petal connecting ceramic (29) is arranged in the space between the crucible petals (20); the petal connecting ceramic (29) is made of filled clay after air drying and high-temperature combustion; N crucible petals (20) and N petal connecting ceramics (29) are combined to form a conical barrel shape, and two ceramic fiber composite hoops (32) are arranged on the outer periphery to fasten them, one of the ceramic fiber composite hoops (32) is arranged on the outer periphery of the connection between N crucible petals (20) and the crucible bottom (27); one is arranged on the outer periphery of N crucible petals (20) and N petal connecting ceramics (29) in the upper part; the ceramic fiber composite hoop (32) plays a role in stabilizing the crucible bottom (27) and N crucible petals (20) and N petal connecting ceramics (29) into a conical barrel; the ceramic fiber composite hoop (32) is a ceramic fiber composite material;

[0084] In Figure 9 , Figure 10 ,Figure 11 、 Figure 12 In the application, the crucible wall flap (20) comprises an arc wall passage (20-1), an outer arc wall (20-2), an inner arc wall (20-3), a side wall (20-4), a connecting bolt (20-5), an inner lining heat dissipation fin (20-6), an inner country temperature-resistant fin (20-7), and a high-temperature-resistant coating (20-8). The outer arc wall (20-2) and the inner arc wall (20-3) are combined with the two side walls (20-4) to form a four-wall arc-shaped tube. The inner lining heat dissipation fin (20-6) is arranged on the inner side of the inner arc wall (20-3), and the inner country temperature-resistant fin (20-7) is arranged on the outer side of the inner arc wall (20-3). The connecting bolt (20-5) is arranged in the inner arc wall (20-3) to connect the inner lining heat dissipation fin (20-6) and the inner country temperature-resistant fin (20-7). The connecting bolt (20-5) connects the inner lining heat dissipation fin (20-6), the inner arc wall (20-3), and the inner country temperature-resistant fin (20-7) into an integrated whole. The surface of the inner country temperature-resistant fin (20-7) is coated with the high-temperature-resistant coating (20-8).

[0085] The outer arc wall (20-2), the inner arc wall (20-3), and the side wall (20-4) are made of copper-manganese alloy. The mass ratio of the composite components of copper and manganese is 61.5-72.5 parts of copper and 28.5-39.5 parts of manganese.

[0086] The inner lining heat dissipation fin (20-6) is made of aluminum.

[0087] The inner country temperature-resistant fin (20-7) is made of an alloy of tungsten, tantalum carbide, and copper. The mass ratio of the composite components of tungsten, tantalum carbide, and copper is 35.5-45.5 parts of tungsten, 24.5-35.5 parts of tantalum carbide, and 28.5-39.5 parts of copper.

[0088] The high-temperature-resistant coating (20-8) is a composite coating of graphene, tantalum carbide, copper, and tungsten. The mass ratio of the components of graphene, tantalum carbide, copper, and tungsten in the high-temperature-resistant coating (20-8) is 16.5-27.5 parts of graphene, 19-30 parts of tantalum carbide, 15-26 parts of copper, and 26.5-37.5 parts of tungsten. The spraying method is plasma spraying.

[0089] The role of the crucible wall petal (20): due to the adoption of multiple high-temperature-resistant materials to form a special water-cooling structure, it has certain high-temperature resistance, and can make the crucible composed of multiple crucible wall petals (20) high-temperature-resistant and long in service life; the arc wall passage (20-1) of the crucible wall petal (20) plays a role in cooling and resisting high temperature; the inner lining heat dissipation fin (20-6) plays a role in quickly dissipating the heat energy of the inner arc wall (20-3) into cooling water; the inner country temperature-resistant fin (20-7) plays a role in resisting high temperature to protect the inner arc wall (20-3), thereby prolonging the service life of the crucible wall petal (20); the high-temperature-resistant coating (20-8) plays a role in resisting high temperature to protect the inner country temperature-resistant fin (20-7), thereby making the inner country temperature-resistant fin (20-7) more durable, playing a role in further protecting the inner arc wall (20-3) of the crucible wall petal (20), and further prolonging the service life of the crucible wall petal (20); the connecting bolt (20-5) plays a role in connecting the inner lining heat dissipation fin (20-6), the inner arc wall (20-3), and the inner country temperature-resistant fin (20-7) into one, thereby further guaranteeing the stable heat dissipation performance of the inner lining heat dissipation fin (20-6) and the stable heat resistance of the inner country temperature-resistant fin (20-7), and thereby stabilizing the use performance and service life of the crucible wall petal (20).

[0090] In Figure 13 , Figure 14In the middle, the crucible bottom (27) includes ceramic upper ring layer (27-1), cooling channel mouth (27-2), high temperature resistant conductive coating B (27-3), ceramic inner ring skeleton (27-4), plasma positive electrode (27-5), ceramic middle disc (27-6), ceramic bottom ring disc (27-7), ceramic body cooling channel (27-8), cooling ceramic tube (27-9), cooling ceramic pipe (27-10), conductor connecting hole (27-11), hollow ceramic column (27-12), outer ceramic wall (27-13), ceramic tooth spacing (27-14); characterized in that: the outer periphery of the ceramic upper ring layer (27-1) is provided with a plurality of ceramic tooth spacing (27-14), the plurality of ceramic tooth spacing (27-14) is connected with the outer ceramic wall (27-13); the plurality of ceramic tooth spacing (27-14) and the ceramic upper ring layer (27-1), the outer ceramic wall (27-13) form a cooling channel mouth (27-2); the ceramic upper ring layer (27-1), the ceramic inner ring skeleton (27-4), the ceramic middle disc (27-6) form a recessed disc cavity, the recessed disc cavity is provided with a plasma positive electrode (27-5), the plasma positive electrode (27-5) is a disc-shaped conductor, the upper surface of the plasma positive electrode (27-5) is provided with a high temperature resistant conductive coating B (27-3); the outer ceramic wall (27-13), the ceramic bottom ring disc (27-7) and the ceramic tooth spacing (27-14), the ceramic inner ring skeleton (27-4), the ceramic middle disc (27-6) form a double-layer hollow structure, so that the outer ceramic wall (27-13) and the ceramic inner ring skeleton (27-4) form a ceramic body cooling channel (27-8), the ceramic bottom ring disc (27-7) and the ceramic middle disc (27-6) form a ceramic body cooling channel (27-8); the ceramic bottom ring disc (27-7) is provided with a cooling ceramic tube (27-9) in the middle, the cooling ceramic tube (27-9) has a cooling ceramic pipe (27-10); the cooling ceramic pipe (27-10) is communicated with the ceramic body cooling channel (27-8) and the cooling channel mouth (27-2); the ceramic middle disc (27-6) and the ceramic bottom ring disc (27-7) are provided with a hollow ceramic column (27-12), the hollow ceramic column (27-12) is provided with a conductor connecting hole (27-11);

[0091] The plasma positive electrode (27-5) is an alloy of tungsten and copper, and the mass ratio of the tungsten and copper is 18.5-29.5 parts of tungsten and 32.5-43.5 parts of copper;

[0092] The high-temperature-resistant conductive coating B (27-3) is a composite coating of graphene, silicon carbide, aluminum nitride, tungsten and carbon; the mass ratio of graphene, silicon carbide, aluminum nitride, tungsten and carbon in the high-temperature-resistant conductive coating B (27-3) is as follows: graphene 15-26 parts, silicon carbide 21.5-32.5 parts, aluminum nitride 9-20 parts, tungsten 24.5-35.5 parts, and carbon 26.5-37.5 parts; and the spraying method is plasma spraying.

[0093] The crucible bottom (27) is combined with the plurality of crucible petals (20) to communicate with the water cooling channel, and forms the crucible bottom (27) with circulating water cooling: the cooling ceramic pipeline (27-10) is communicated with the ceramic body cooling channel (27-8) and the cooling channel port (27-2), so that the cooling water flows through the inside of the crucible bottom (27), thereby the plasma positive electrode (27-5) is cooled by the cooling water to enhance the heat resistance, so that the plasma positive electrode (27-5) can resist high-temperature corrosion, thereby improving the service life of the crucible bottom (27); the high-temperature-resistant conductive coating B (27-3) can further improve the high-temperature resistance and electrical properties of the plasma positive electrode (27-5), thereby improving the service life and heating performance of the crucible bottom (27).

[0094] In Figure 15 The plasma cathode column (11) includes a cathode column body (11-1), a liquid chamber (11-2), a liquid flow hole (11-3), a high-temperature-resistant conductive coating C (11-4), a micro water pump (11-5), a water suction pipe (11-7), and a water jet pipe (11-6); characterized in that: the cathode column body (11-1) is provided with a high-temperature-resistant conductive coating C (11-4) outside the body, and a liquid chamber (11-2) capable of containing liquid and a liquid flow hole (11-3) capable of flowing liquid are arranged inside the body; the liquid chamber (11-2) and the two liquid flow holes (11-3) can flow cooling water or cooling liquid; a micro water pump (11-5) is arranged at the upper part of the liquid chamber and the two liquid flow holes (11-3), the micro water pump (11-5) is provided with a water suction pipe (11-7) and a water jet pipe (11-6), the water jet pipe (11-6) is in the space of the liquid chamber (11-2), and the water suction pipe (11-7) is connected to the cooling water inlet D (12) to flow water;

[0095] The cathode column body (11-1) is composed of tungsten, copper, silver and carbon, and the mass ratio of tungsten, copper, silver and carbon in the cathode column body (11-1) is as follows: tungsten 19-30 parts, copper 16.5-27.5 parts, silver 5-16 parts, and carbon 16.5-27.5 parts;

[0096] The high-temperature resistant conductive coating C(11-4) is a composite coating of graphene, silicon carbide, molybdenum, tungsten, and carbon; the mass ratio of graphene, silicon carbide, molybdenum, tungsten, and carbon in the high-temperature resistant conductive coating C(11-4) is as follows: graphene 16.5-27.5 parts, silicon carbide 14.5-25.5 parts, molybdenum 5-16 parts, tungsten 26.5-37.5 parts, and carbon 24.5-35.5 parts; the spraying method is plasma spraying.

[0097] The plasma cathode column (11) features the following functions: the liquid chamber (11-2) and liquid flow hole (11-3) of the plasma cathode column (11) allow cooling water to circulate; the micro water pump (11-5), water suction pipe (11-7), and water jet pipe (11-6) allow water to circulate at high speed, thereby efficiently cooling the cathode column (11-1); the high-temperature resistant conductive coating C (11-4) further increases the high-temperature resistance and conductivity of the plasma cathode column (11), thereby improving the effective working time and service life of the plasma cathode column (11); it can achieve the beneficial effects of reducing maintenance costs and improving production efficiency.

[0098] The beneficial effects achieved by the plasma cathode column (11) are: to enhance discharge performance, save energy, reduce the replacement cost of the cathode column (11-1), extend the service life of the cathode column (11-1), and improve the production efficiency of nano-metal powder.

[0099] Furthermore, in Figure 6 In the metal material feeding device (41), the upper part of the fixed frame (4144) is provided with a hopper support (4145), and the middle part is provided with a weighing support (4143). A hopper (411) is installed on the hopper support (4145), and a solenoid valve a (412) is installed below the hopper (411). A through pipe A (4131) is installed below the solenoid valve a (4142). A solenoid valve b (415) is installed on the weighing support (4143), and a weighing hopper (414) is installed on the solenoid valve b (415). The upper end of the weighing hopper (414) The opening surrounds the through pipe A (4131) under the solenoid valve a (412); the through pipe B (4132) under the weighing bracket (4143) is connected to the solenoid valve c (416), the air-isolating hopper A (417) is installed under the solenoid valve c (416), the solenoid valve d (418) under the air-isolating hopper A (417) is connected to the air-isolating hopper B (419), the solenoid valve e (410) is installed under the air-isolating hopper B (419); the through pipe C (4133) under the solenoid valve e (410) is connected to the metal material input channel (8);

[0100] The upper opening of the weighing hopper (414) has a pipe A (4131) suspended therein, the lower end surface of the pipe A (4131) on the weighing hopper (414) is 10-50mm lower than the upper end surface of the weighing hopper (414); the lower end of the weighing hopper (414) is connected with a solenoid valve b (415), the lower end of the solenoid valve b (415) is provided with a material leakage guide pipe (4142), the material leakage guide pipe (4142) is in the hollow of the pipe B (4132), the weighing hopper (414), 3-6 gravity sensors (4141), the material leakage guide pipe (4142) and the weighing support (4143), and has a gap with the pipe B (4132), the weighing hopper (414), 3-6 gravity sensors (4141), the material leakage guide pipe (4142) and the weighing support (4143) without connection, the gap between the material leakage guide pipe (4142) and the weighing support (4143) and the pipe B (4132) is 3-10mm, the distance between the material leakage guide pipe (4142) and the 3-6 gravity sensors (4141) is 10-50mm; the lower end of the material leakage guide pipe (4142) is higher than the upper end of the pipe B (4132) below the weighing support (4143); the combination of the weighing hopper (414), the solenoid valve b (415) and the material leakage guide pipe (4142) is an integral device on the 3-6 gravity sensors (4141); the 3-6 gravity sensors (4141) are movably arranged between the solenoid valve b (415) and the weighing support (4143); the solenoid valve b (415) is used for opening or closing the passage between the weighing hopper (414) and the material leakage guide pipe (4142), when the solenoid valve b (415) is opened, the metal material in the weighing hopper (414) leaks to the material leakage guide pipe (4142) through the solenoid valve b (415), when the solenoid valve b (415) is closed, the metal material in the weighing hopper (414) cannot leak to the material leakage guide pipe (4142) through the solenoid valve b (415); the pipe B (4132) is arranged on the periphery of the material leakage guide pipe (4142), and the pipe B (4132) is sleeved with the material leakage guide pipe (4142) without contact;

[0101] 3-6 gravity sensors (4141) are arranged between the lower end of the solenoid valve b (415) and the weighing support (4143), the gravity sensors (4141) are used for sensing the total weight of the metal material in the weighing hopper (414), the solenoid valve b (415), the material leakage guide pipe (4142) and the weighing hopper (414), and subtracting the weight of the weighing hopper (414), the solenoid valve b (415) and the material leakage guide pipe (4142) to obtain the net weight of the metal material.

[0102] Further, the single-chip microcomputer controller of the feeding and heating automatic control system for manufacturing nano metal powder comprises a CPU chip, a ROM memory, a RAM memory, a power module, a network module, a MAX232 module, an A / D input module, and a thyristor output module; the single-chip microcomputer controller is used to control the metal material feeding device, the high-frequency generator, and the plasma power source after processing the information of the infrared thermometer, the radar liquid level meter, and the gravity sensor;

[0103] The computer comprises CPU programming software and nano metal powder feeding and heating automatic control software; the CPU programming software is used to program the CPU of the single-chip microcomputer;

[0104] The interface of the nano metal powder feeding and heating automatic control software comprises total power control, plasma heating control, inductive heating control, furnace temperature setting of the high-temperature evaporation equipment, furnace temperature display of the high-temperature evaporation equipment, feeding setting, and electromagnetic valve control; the plasma heating control comprises current setting and airflow setting; the inductive heating control comprises current setting and power display; the feeding setting comprises automatic feeding and manual feeding; the automatic feeding comprises feeding amount setting and feeding frequency setting; the manual feeding comprises one-time feeding amount setting; the electromagnetic valve control comprises electromagnetic valve a switch, electromagnetic valve b switch, electromagnetic valve c switch, electromagnetic valve d switch, and electromagnetic valve e switch;

[0105] The infrared thermometer and the radar liquid level meter device are arranged in the high-temperature evaporation equipment and are connected with the A / D input module of the single-chip microcomputer controller; the gravity sensor device is arranged at the lower end of the electromagnetic valve a of the metal material feeding device and is connected with the A / D input module of the single-chip microcomputer controller;

[0106] The method for heating automatic control of the feeding and heating automatic control system for manufacturing nano metal powder;

[0107] The infrared thermometer collects temperature information of the high-temperature evaporation equipment and transmits the information to the single-chip microcomputer controller, which processes the information according to the information transmitted by the infrared thermometer; when the temperature of the high-temperature evaporation equipment sensed by the infrared thermometer is lower than 1025-2255 ℃, the CPU sends a temperature-rising command signal to the thyristor output module, which controls the high-frequency generator (39) and the plasma power supply (42) to increase the heating power; when the temperature of the high-temperature evaporation equipment sensed by the infrared thermometer is higher than 1125-2355 ℃, the CPU sends a temperature-reducing command signal to the thyristor output module, which controls the high-frequency generator (39) and the plasma power supply (42) to reduce the heating power; the single-chip microcomputer controller controls the high-frequency generator (39) and the plasma power supply (42) to make the temperature of the high-temperature evaporation equipment range between 300-5000 ℃, and the control optimized temperature is set according to the melting point of the metal material to be processed.

[0108] The method and steps of the automatic feeding control of the feeding and heating automatic control system for manufacturing nano metal powder;

[0109] The radar liquid level meter detects the metal liquid level information of the high-temperature evaporation equipment and transmits the information to the single-chip microcomputer controller, which processes the information according to the information transmitted by the radar liquid level meter; when the metal liquid level height of the high-temperature evaporation equipment is lower than the set range, the single-chip microcomputer controller controls the feeding device to feed the high-temperature evaporation equipment; when the radar liquid level meter detects that the metal liquid level height of the high-temperature evaporation equipment is higher than the set range, the feeding stops; the metal liquid level height of the high-temperature evaporation equipment is automatically maintained in the set range; thereby ensuring the stable evaporation of the metal vapor of the high-temperature evaporation equipment and achieving the purpose of continuous and efficient uninterrupted production of metal powder;

[0110] The specific automatic feeding work steps are as follows:

[0111] The gravity sensor collects the metal material weight information of the weighing hopper and transmits the information to the single-chip microcomputer controller, which processes the information according to the information transmitted by the gravity sensor;

[0112] Step one, when the single-chip microcomputer controller A / D input module receives the metal liquid level height detected by the radar liquid level meter is lower than the upper end surface of the crucible wall (20) 750-1000 mm, the CPU sends an open electromagnetic valve a command signal to the thyristor output module, which controls the electromagnetic valve a to open, so that the metal material in the material collecting hopper is leaked to the weighing hopper through the electromagnetic valve a;

[0113] Step two, when the single-chip microcomputer controller's A / D input module receives the net weight of the material in the weighing hopper detected by the gravity sensor reaches 1880-2050g, the CPU sends a command signal to the thyristor output module to close the electromagnetic valve a, and the thyristor output module controls the electromagnetic valve a to close, while the electromagnetic valve b and the electromagnetic valve c are opened, and the material in the weighing hopper leaks into the gas isolation hopper A through the electromagnetic valve b and the electromagnetic valve c;

[0114] Step three, when the single-chip microcomputer controller's A / D input module receives the net weight of the material in the weighing hopper detected by the gravity sensor is 0-250g, the CPU sends a command signal to the thyristor output module to close the electromagnetic valve b and the electromagnetic valve c, and the thyristor output module controls the electromagnetic valve b and the electromagnetic valve c to close;

[0115] Step four, after the electromagnetic valve b and the electromagnetic valve c are closed for 10-15 seconds, the CPU of the single-chip microcomputer controller sends a command signal to the thyristor output module to open the electromagnetic valve d, and the thyristor output module controls the electromagnetic valve d to open, and at this time, the material in the gas isolation hopper A leaks into the gas isolation hopper B;

[0116] Step five, after the electromagnetic valve d is opened for 20-30 seconds, the CPU of the single-chip microcomputer controller sends a command signal to the thyristor output module to close the electromagnetic valve d, and the thyristor output module controls the electromagnetic valve d to close;

[0117] Step six, after the electromagnetic valve d is closed for 10-15 seconds, the CPU of the single-chip microcomputer controller sends a command signal to the thyristor output module to open the electromagnetic valve e, and the thyristor output module controls the electromagnetic valve e to open, and the material in the gas isolation hopper B leaks into the high-temperature evaporation equipment through the electromagnetic valve e;

[0118] Step seven, after the electromagnetic valve e is opened for 3-30 seconds, the CPU sends a command signal to the thyristor output module to close the electromagnetic valve e, and the thyristor output module controls the electromagnetic valve e to close;

[0119] The steps one to seven can automatically add material according to the liquid level height of the metal solution in the high-temperature evaporation equipment, so that the liquid level height of the metal solution in the high-temperature evaporation equipment is always maintained within the set height range, thereby enabling the high-temperature evaporation equipment to continuously work without interruption regardless of the addition of material. Compared with manual addition, the automatic addition method greatly improves the production efficiency of the nanometer metal powder. Moreover, due to the double gas isolation and addition effects of the gas isolation hoppers A and B and the electromagnetic valves c, d and e, the addition of the high-temperature evaporation equipment is completely isolated from the air outside the furnace, is not affected by the external environment temperature, and enables the temperature and gas pressure in the furnace to be stable, thereby enabling the evaporation of the metal vapor to be uniform and stable, and the size of the produced nanometer metal powder particles to be uniform and the quality to be stable. Embodiment

[0120] A method for automatic control of heating in the production of nanometer nickel powder is as follows:

[0121] The infrared thermometer collects the temperature information of the high-temperature evaporation equipment and transmits it to the single-chip microcomputer controller, which processes the information according to the information transmitted by the infrared thermometer; when the temperature of the high-temperature evaporation equipment sensed by the infrared thermometer is lower than 1755℃, the CPU sends a temperature-rising command signal to the thyristor output module, which controls the high-frequency generator (39) and the plasma power supply (42) to increase the heating power; when the temperature of the high-temperature evaporation equipment sensed by the infrared thermometer is higher than 2255℃, the CPU sends a temperature-lowering command signal to the thyristor output module, which controls the high-frequency generator (39) and the plasma power supply (42) to decrease the heating power; the single-chip microcomputer controller controls the high-frequency generator (39) and the plasma power supply (42) to make the temperature of the high-temperature evaporation equipment range between 1755-2255℃.

[0122] A method for automatic control of feeding in the production of nanometer nickel powder is as follows:

[0123] The gravity sensor collects the metal material weight information of the weighing hopper and transmits it to the single-chip microcomputer controller, which processes the information according to the information transmitted by the gravity sensor;

[0124] Step one: when the A / D input module of the single-chip microcomputer controller receives the metal liquid level height detected by the radar liquid level meter being lower than the upper end surface of the crucible wall (20) by 850-1000mm, the CPU sends an open electromagnetic valve a command signal to the thyristor output module, which controls the electromagnetic valve a to open, so that the nickel material in the collecting hopper is leaked to the weighing hopper through the electromagnetic valve a;

[0125] Step two: when the A / D input module of the single-chip microcomputer controller receives the net weight of the nickel powder material in the weighing hopper detected by the gravity sensor reaching 1250-2000g, the CPU sends a close electromagnetic valve a command signal to the thyristor output module, which controls the electromagnetic valve a to close, while the electromagnetic valve b and the electromagnetic valve c are opened, so that the nickel material in the weighing hopper is leaked to the gas isolation hopper A through the electromagnetic valve b and the electromagnetic valve c;

[0126] Step three: when the A / D input module of the single-chip microcomputer controller receives the net weight of the nickel material in the weighing hopper detected by the gravity sensor being 0-150g, the CPU sends a command signal to close the electromagnetic valve b and the electromagnetic valve c to the thyristor output module, which controls the electromagnetic valve b and the electromagnetic valve c to close;

[0127] Step four, after the electromagnetic valve b and electromagnetic valve c are closed for 10-15 seconds, the CPU of the single-chip microcomputer controller sends an opening command signal of the electromagnetic valve d to the thyristor output module, and the thyristor output module controls the electromagnetic valve d to open, at this time, the nickel material in the air separation tank A is leaked to the air separation tank B;

[0128] Step five, after the electromagnetic valve d is opened for 20-30 seconds, the CPU of the single-chip microcomputer controller sends a closing command signal of the electromagnetic valve d to the thyristor output module, and the thyristor output module controls the electromagnetic valve d to close;

[0129] Step six, after the electromagnetic valve d is closed for 10-15 seconds, the CPU of the single-chip microcomputer controller sends an opening command signal of the electromagnetic valve e to the thyristor output module, and the thyristor output module controls the electromagnetic valve e to open, and the material in the air separation tank B is leaked to the high-temperature evaporation equipment through the electromagnetic valve e;

[0130] Step seven, after the electromagnetic valve e is opened for 5-10 seconds, the CPU sends a closing command signal of the electromagnetic valve e to the thyristor output module, and the thyristor output module controls the electromagnetic valve e to close;

[0131] The steps one to seven can automatically add material according to the liquid level height of the metal solution of the high-temperature evaporation equipment, so that the liquid level height of the nickel material solution in the high-temperature evaporation equipment is always maintained within the set height range, so that the high-temperature evaporation equipment can continuously work without being affected by the material adding, compared with manual material adding, the automatic material adding method greatly improves the production efficiency of the nano nickel powder; and due to the double air separation and material adding effects of the air separation tank A, the air separation tank B, the electromagnetic valve c, the electromagnetic valve d and the electromagnetic valve e, the effects are better than the single air separation effect, so that the material adding of the high-temperature evaporation equipment is completely isolated from the air outside the furnace, is not affected by the external environment temperature, so that the temperature and the air pressure in the furnace of the high-temperature evaporation equipment are stable, so that the evaporation of the nickel vapor is uniform and stable, and the particle size of the produced nano nickel powder is uniform and the quality is stable.

[0132] The above method and steps of the application are also used for producing nano powder of cobalt, tantalum and tungsten.

Claims

1. A high-temperature evaporation device (100) for manufacturing nanometer metal powder, comprising a water-cooled cylindrical shell (1), a water-cooled hemispherical shell (7), a cooling water inlet A (3), a cooling water storage cavity A (9), a cooling water inlet C (10), a plasma cathode column (11), a cooling water inlet D (12), an evaporation chamber inner wall (14), a heat preservation wall (16), a hemispherical shell cooling water channel (30), a shell connecting ceramic (17), a cooling water storage cavity B (18), a cooling water inlet B (19), a cooling water outlet A (25), a plasma anode connecting column (26), an anode insulation sleeve (261), a cooling water outlet B (28), a wall petal connecting ceramic (29), a cylindrical shell cooling water channel (31), a ceramic fiber composite hoop (32), and a cathode mounting channel (34); characterized in that: The plasma cathode column (11) comprises a cathode column body (11-1), a liquid chamber (11-2), a liquid flow hole (11-3), a high-temperature-resistant conductive coating C (11-4), a micro water pump (11-5), a water suction pipe (11-7), and a water jet pipe (11-6); the cathode column body (11-1) is externally provided with the high-temperature-resistant conductive coating C (11-4), and the cathode column body (11-1) is internally provided with the liquid chamber (11-2) capable of containing liquid and the liquid flow hole (11-3) capable of flowing liquid; the liquid chamber (11-2) and the two liquid flow holes (11-3) can flow cooling water or cooling liquid; the micro water pump (11-5) is arranged at the upper part of the liquid chamber and the two liquid flow holes (11-3); the micro water pump (11-5) is provided with the water suction pipe (11-7) and the water jet pipe (11-6); the water jet pipe (11-6) is arranged in the space of the liquid chamber (11-2); and the water suction pipe (11-7) is connected with the cooling water inlet D (12) to pass water; The water flows through the water circulation cooler A (36) through the cooling water inlet A (3) and the cooling water inlet B (19) into the barrel shell cooling water channel (31), and then flows into the water circulation cooler A (36) through the cooling water outlet B (28) for circulation; The water flows through the water circulation cooler B (37) through the cooling water inlet C (10) and the cooling water inlet D (12) into the hemispherical shell cooling water channel (30), and then flows into the water circulation cooler B (37) through the cooling water outlet A (25) for circulation; The plasma cathode column (11) is connected with the water path of the cooling water inlet D (12); The crucible wall petals (20), the crucible bottom (27), the wall petal connecting ceramic (29), and the ceramic fiber composite hoop (32) form a pot-shaped structure; The crucible wall petals (20) comprise an arc wall passage (20-1), an outer arc wall (20-2), an inner arc wall (20-3), a side wall (20-4), a connecting bolt (20-5), an inner lining heat dissipation fin (20-6), an inner country temperature-resistant fin (20-7), and a high-temperature-resistant coating (20-8); The crucible bottom (27) comprises a ceramic upper ring layer (27-1), a cooling passage opening (27-2), a high-temperature-resistant conductive coating B (27-3), a ceramic inner ring framework (27-4), a plasma positive electrode (27-5), a ceramic middle disc (27-6), a ceramic bottom disc (27-7), a ceramic body cooling passage (27-8), a cooling ceramic pipe (27-9), a cooling ceramic pipe (27-10), a conductor connecting hole (27-11), a hollow ceramic column (27-12), an outer ceramic wall (27-13), and a ceramic tooth spacing (27-14); The cathode column body (11-1) is composed of tungsten, copper, silver, and carbon, and the mass ratio of the components of tungsten, copper, silver, and carbon in the cathode column body (11-1) is as follows: tungsten 19-30 parts, copper 16.5-27.5 parts, silver 5-16 parts, and carbon 16.5-27.5 parts; The high-temperature-resistant conductive coating C (11-4) is a composite coating of graphene, silicon carbide, molybdenum, tungsten and carbon; the mass ratio of graphene, silicon carbide, molybdenum, tungsten and carbon in the high-temperature-resistant conductive coating C (11-4) is as follows: graphene 16.5-27.5 parts, silicon carbide 14.5-25.5 parts, molybdenum 5-16 parts, tungsten 26.5-37.5 parts, and carbon 24.5-35.5 parts; The spraying method is plasma spraying.

2. The high-temperature evaporation device for manufacturing nanometal powder according to claim 1, further comprising a feeding and heating automatic control system comprising a computer, a switch, and a single-chip microcomputer controller, characterized in that: The radar liquid level meter, the infrared thermometer, the metal material feeding device, the high-frequency generator, the plasma power supply, and the high-temperature evaporation equipment are further included; the metal material feeding device includes a collecting hopper, an electromagnetic valve a, a weighing hopper, a gravity sensor, an electromagnetic valve b, an electromagnetic valve c, an air separation hopper A, an electromagnetic valve d, an air separation hopper B, and an electromagnetic valve e; the computer includes CPU programming software and nano metal powder feeding and heating automatic control software; the CPU programming software is used for programming the CPU program of the single-chip microcomputer; the nano metal powder feeding and heating automatic control software interface includes total power control, plasma heating control, inductive heating control, furnace temperature setting of the high-temperature evaporation equipment, furnace temperature display of the high-temperature evaporation equipment, feeding setting, and electromagnetic valve control; the plasma heating control includes current setting and airflow setting; the inductive heating control includes current setting and power display; the feeding setting includes automatic feeding and manual feeding, and the automatic feeding includes feeding amount setting and feeding frequency setting, and the manual feeding includes one-time feeding amount setting; the electromagnetic valve control includes electromagnetic valve a switch, electromagnetic valve b switch, electromagnetic valve c switch, electromagnetic valve d switch, and electromagnetic valve e switch.

3. The high-temperature evaporation apparatus for manufacturing nanometal powder according to claim 1, wherein: The single-chip microcomputer controller includes a CPU chip, a ROM memory, a RAM memory, a power module, a network module, a MAX232 module, an A / D input module, and a thyristor output module; the single-chip microcomputer controller processes the information of the infrared thermometer, the radar liquid level meter, and the gravity sensor to control the metal material feeding device, the high-frequency generator, and the plasma power supply.

4. The high-temperature evaporation apparatus for manufacturing nanometal powder according to claim 1, wherein: The infrared thermometer and the radar liquid level meter device are arranged in the high-temperature evaporation equipment and connected to the A / D input module of the single-chip microcomputer controller; the gravity sensor device is arranged at the lower end of the electromagnetic valve a of the metal material feeding device and connected to the A / D input module of the single-chip microcomputer controller.

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