A system and method for detecting chip-level current in a high power semiconductor module

Abstract

The application discloses a system and method for detecting high-power semiconductor module chip-level current, and belongs to the technical field of power semiconductor detection. The application forms a multilayer PCB planar Rogowski coil by designing a Rogowski coil on a multilayer PCB, and a magnetoresistance chip is welded on a magnetoresistance chip PCB, and the magnetoresistance chip is perpendicular to the Rogowski coil PCB plane, thereby forming a hybrid sensor. The hybrid sensor composed of the magnetoresistance chip and the Rogowski coil realizes real-time measurement of high-power semiconductor module chip-level current. High-frequency signals and noise in the measurement results of the magnetoresistance chip are filtered out during measurement, and the measurement results of the magnetoresistance chip are decoupled, thereby eliminating the influence of the current flowing through the remaining semiconductor chips on the measurement of a specific magnetoresistance chip, and obtaining the decoupled magnetoresistance measurement results. The method has simple processing process and accurate processing results, and solves the technical problem that the existing hybrid sensor can only measure alternating current when detecting high-power semiconductor module chip-level current.

Description

Technical Field

[0001] This invention belongs to the field of power semiconductor detection technology, specifically relating to a system and method for detecting chip-level current in high-power semiconductor modules. Background Technology

[0002] With the continuous advancement of high-voltage direct current transmission projects, in order to meet the needs of the power grid, high-power, fully controllable semiconductor power modules are being used more extensively in converter valve modules.

[0003] Domestic and international power semiconductor manufacturers, such as CRRC Times Electric, Toshiba, IXYS, and ABB, produce high-power semiconductor modules with maximum current ratings exceeding 3000A. These devices consist of dozens of semiconductor chips connected in parallel. However, high-power semiconductor modules have complex electro-thermal-mechanical coupling relationships. Due to the geometric asymmetry between chips within the module, uneven assembly forces and heat dissipation may occur, further affecting the current distribution among the parallel chips. Uneven current distribution can cause current concentration in some chips, potentially leading to overcurrent in some chips and ultimately causing the entire device to fail. Therefore, a hybrid sensor capable of real-time detection of chip-level current in high-power semiconductor modules can provide chip current monitoring and early warning, offering health checks for high-power semiconductor modules. In existing technology, the patent "A Current Detection Method for High-Power Press-fit IGBT Modules" (Publication No.: CN104459277A) proposes a method of embedding a Rogowski coil inside a press-fit IGBT to measure the IGBT chip current. However, Rogowski coils can only measure AC current, and their performance is poor for DC and low-frequency current measurements. Summary of the Invention

[0004] In order to overcome the shortcomings of the prior art, the present invention aims to provide a system and method for detecting chip-level current of high-power semiconductor modules, so as to solve the technical problem that existing hybrid sensors can only measure AC current when performing chip-level current detection of high-power semiconductor modules.

[0005] To achieve the above objectives, the present invention employs the following technical solution:

[0006] This invention discloses a system for detecting chip-level current in a high-power semiconductor module, comprising a high-power semiconductor module and a hybrid sensor; the hybrid sensor is mounted on the high-power semiconductor module.

[0007] The hybrid sensor includes a multilayer PCB planar Rogowski coil, a magnetoresistive chip, and a magnetoresistive chip PCB; the magnetoresistive chip is disposed on the surface of the magnetoresistive chip PCB, and the magnetoresistive chip PCB is perpendicularly connected to the multilayer PCB planar Rogowski coil via bent pins.

[0008] The high-power semiconductor module includes an upper cover and a lower cover; N sub-modules are interspersed between the upper cover and the lower cover; each sub-module has a boss at the connection point with the lower cover; the hybrid sensor is mounted on the boss in each sub-module via a multi-layer PCB planar Rogowski coil, and the magnetoresistive chip PCB is placed perpendicular to the boss.

[0009] Furthermore, the number of N is at least two.

[0010] Furthermore, the number of N is four.

[0011] Furthermore, in the direction from the upper end cover to the lower end cover, the sub-module includes an upper molybdenum sheet, a semiconductor chip, a lower molybdenum sheet, and a silver pad connected in sequence; the molybdenum sheet is connected to the upper end cover; and the silver pad is connected to the boss.

[0012] Furthermore, the semiconductor chips and bosses in each sub-module are connected in series; the semiconductor chips in the N sub-modules are connected in parallel.

[0013] The present invention also discloses a measurement method for the above-mentioned system for detecting chip-level current of a high-power semiconductor module, comprising the following steps:

[0014] S1: First, zero and reset the N magnetoresistive chips; then measure the output results of the N magnetoresistive chips and perform low-pass filtering to filter out high-frequency signals and noise in the magnetoresistive chip measurement results; then couple the measurement results of the N magnetoresistive chips to obtain the magnetoresistive measurement results.

[0015] S2: Input the voltage output from the Rogowski coil in the multi-layer PCB planar Rogowski coil into the integrator to obtain the output result; then perform high-pass filtering on the output result to obtain the filtered Rogowski coil measurement result;

[0016] S3: Add the obtained magnetoresistive measurement results to the Rogowski coil measurement results.

[0017] Furthermore, in S1, the process of signal coupling of the measurement results of the N magnetoresistive chips is as follows:

[0018] First, determine matrices I, M, and V;

[0019] in:

[0020] The value of the Xth term in I is i X The current value passing through the Xth sub-module (12); the value m in the Xth row and Yth column of matrix M. XY This represents the influence coefficient of the current of the Y-th sub-module (12) on the measurement result of the X-th sub-module; the X-th value of V in V. XThe measured output value after filtering of the Xth sub-module (12);

[0021] Where MI = V, the values ​​of M and V are determined experimentally as follows: only the first sub-module is activated, and the other sub-modules are deactivated. At this time, i2 = i3 = i4 = ... N =0, the elements of matrix V can be directly measured, and the elements of the first column of matrix M can be obtained;

[0022]

[0023] The elements of columns 2, 3, 4, ... N of matrix M are obtained by analogy to the above steps. Therefore, the current value I flowing through each sub-module is obtained by I = M. -1 V is calculated, and the final magnetoresistive measurement result is obtained.

[0024] Furthermore, in the direction from the upper end cover to the lower end cover, the sub-module includes an upper molybdenum sheet, a semiconductor chip, a lower molybdenum sheet, and a silver pad connected in sequence; the molybdenum sheet is connected to the upper end cover; the silver pad is connected to the boss; and the number of N is four.

[0025] The process of signal coupling of the measurement results from the four magnetoresistive chips is as follows:

[0026] First, determine matrices I, M, and V;

[0027] in:

[0028] The value of the x-th term in I is i x Let m be the current value passing through the x-th semiconductor chip; m is the value in the x-th row and y-th column of matrix M. xy V represents the influence coefficient of the current of the y-th semiconductor chip on the measurement result of the x-th semiconductor chip; the x-th value of V. x This is the filtered measurement output value of the x-th semiconductor chip;

[0029] Where MI = V, the values ​​of M and V are determined experimentally through the following steps: only the first semiconductor chip is turned on, and the other semiconductor chips are turned off. At this time, i2 = i3 = i4 = 0, and the elements of matrix V can be directly measured, thus obtaining the elements of the first column of matrix M.

[0030]

[0031] The elements of columns 2, 3, and 4 of matrix M are obtained by analogy to the above steps. Therefore, the current value I flowing through each sub-module is derived from I = M. - 1 V is calculated, and the final magnetoresistive measurement result is obtained.

[0032] Compared with the prior art, the present invention has the following beneficial effects:

[0033] This invention discloses a system for detecting chip-level current in high-power semiconductor modules. By designing a Rogowski coil on a multi-layer PCB board to form a multi-layer PCB planar Rogowski coil, and soldering a magnetoresistive chip onto the magnetoresistive chip PCB, with the magnetoresistive chip and the Rogowski coil PCB plane kept perpendicular, a hybrid sensor capable of real-time detection of chip-level current in high-power semiconductor modules is formed. Using this hybrid sensor composed of a magnetoresistive chip and a Rogowski coil, real-time measurement of chip-level current in high-power semiconductor modules is achieved. Here, the magnetoresistive chip is characterized by its ability to measure DC and low-frequency currents, while the Rogowski coil is primarily designed for monitoring high-frequency currents. Compared to existing technologies, the magnetoresistive-Rogowski coil-based hybrid sensor can accurately measure not only the high-frequency currents during semiconductor chip turn-on and turn-off but also low-frequency and DC currents, demonstrating broad application prospects.

[0034] This invention also discloses a measurement method for the aforementioned system for detecting chip-level current in high-power semiconductor modules. A hybrid sensor is mounted on the high-power semiconductor module. During measurement, high-frequency signals and noise in the magnetoresistive chip measurement results are filtered out, and the magnetoresistive chip measurement results are decoupled to eliminate the influence of current flowing through other semiconductor chips on the measurement of a specific magnetoresistive chip, resulting in a decoupled magnetoresistive measurement result. Simultaneously, the voltage output from the Rogowski coil is input to an integrator to obtain the output result. The output result is then high-pass filtered to obtain the filtered Rogowski coil measurement result. The two results are added together to achieve real-time detection of the chip-level current in the high-power semiconductor module. This method is simple to process and provides accurate results, solving the technical problem that existing hybrid sensors for detecting chip-level current in high-power semiconductor modules can only measure alternating current. Attached Figure Description

[0035] Figure 1 This is a flowchart of a system measurement method for detecting chip-level current in a high-power semiconductor module, as disclosed in this invention.

[0036] Figure 2 This is a schematic diagram of the structure of the hybrid sensor disclosed in this invention;

[0037] Figure 3 This is a schematic diagram showing the positions of the hybrid sensor and high-power semiconductor module disclosed in this invention;

[0038] Figure 4 This is a schematic diagram of the specific structure of the hybrid sensor and high-power semiconductor module disclosed in this invention;

[0039] Among them: 1-Multilayer PCB planar Rogowski coil; 2-Bent pin header; 3-Magnetoresistive chip; 4-Magnetoresistive chip PCB; 5-Upper end cover; 6-Lower end cover; 7-Upper molybdenum sheet; 8-Semiconductor chip; 9-Lower molybdenum sheet; 10-Silver pad; 11-Boss; 12-Sub-module; 13-Hybrid sensor. Detailed Implementation

[0040] To enable those skilled in the art to understand the features and effects of the present invention, the terms and expressions used in the specification and claims are explained and defined in general below. Unless otherwise specified, all technical and scientific terms used herein have the ordinary meaning understood by those skilled in the art regarding the present invention, and in case of conflict, the definitions in this specification shall prevail.

[0041] The theories or mechanisms described and disclosed herein, whether right or wrong, should not in any way limit the scope of the invention, that is, the contents of the invention can be implemented without being limited by any particular theory or mechanism.

[0042] In this document, all features defined by numerical ranges or percentage ranges, such as numerical values, quantities, contents, and concentrations, are for the sake of brevity and convenience only. Accordingly, descriptions of numerical ranges or percentage ranges should be considered as covering and specifically disclosing all possible sub-ranges and individual numerical values ​​(including integers and fractions) within those ranges.

[0043] In this article, unless otherwise specified, “contains,” “includes,” “containing,” “has,” or similar terms cover the meanings of “composed of” and “mainly composed of,” for example, “A contains a” covers the meanings of “A contains a and others” and “A contains only a.”

[0044] For the sake of brevity, not all possible combinations of the technical features in each implementation scheme or embodiment are described herein. Therefore, as long as there is no contradiction in the combination of these technical features, the technical features in each implementation scheme or embodiment can be combined arbitrarily, and all possible combinations should be considered within the scope of this specification.

[0045] like Figure 1 As shown, the system measurement method for detecting chip-level current of a high-power semiconductor module disclosed in this invention includes the following steps:

[0046] S1: First, zero and reset the N magnetoresistive chips 3; then measure the output results of the N magnetoresistive chips 3 and perform low-pass filtering to filter out high-frequency signals and noise in the measurement results of the magnetoresistive chips 3; then perform signal coupling on the measurement results of the N magnetoresistive chips 3 to obtain the magnetoresistive measurement results;

[0047] The process of signal coupling of the measurement results of N magnetoresistive chips 3 is as follows:

[0048] First, determine matrices I, M, and V;

[0049] in:

[0050] The value of the Xth term in I is i X The current value passing through the Xth sub-module (12); the value m in the Xth row and Yth column of matrix M. XY This represents the influence coefficient of the current of the Y-th sub-module (12) on the measurement result of the X-th sub-module; the X-th value of V in V. X The measured output value after filtering of the Xth sub-module (12);

[0051] Where MI = V, the values ​​of M and V are determined experimentally as follows: only the first sub-module is turned on (12), and the other sub-modules are turned off (12), at this time i2 = i3 = i4 = ... i N =0, the elements of matrix V can be directly measured, and the elements of the first column of matrix M can be obtained;

[0052]

[0053] The elements of columns 2, 3, 4, ... N of matrix M are obtained by analogy to the above steps. Therefore, the current value I flowing through each sub-module is obtained by I = M. -1 V is calculated, and the final magnetoresistive measurement result is obtained.

[0054] S2: Input the voltage output from the Rogowski coil in the multilayer PCB planar Rogowski coil 1 into the integrator to obtain the output result; then perform high-pass filtering on the output result to obtain the filtered Rogowski coil measurement result;

[0055] S3: Add the obtained magnetoresistive measurement results to the Rogowski coil measurement results.

[0056] The present invention will be further illustrated below with reference to specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, it should be understood that after reading the teachings of this invention, those skilled in the art can make various alterations or modifications to the invention, and these equivalent forms also fall within the scope defined by the appended claims.

[0057] This invention discloses a system for detecting chip-level current in a high-power semiconductor module, comprising a high-power semiconductor module and a hybrid sensor 13; the hybrid sensor 13 is mounted on the high-power semiconductor module; as shown... Figure 2As shown, the hybrid sensor 13 includes a multilayer PCB planar Rogowski coil 1, a magnetoresistive chip 3, and a magnetoresistive chip PCB 4; the magnetoresistive chip 3 is disposed on the surface of the magnetoresistive chip PCB 4, and the magnetoresistive chip PCB 4 is perpendicularly connected to the multilayer PCB planar Rogowski coil 1 via a bent pin 2.

[0058] The high-power semiconductor module includes an upper cover 5 and a lower cover 6; N sub-modules 12 are arranged between the upper cover 5 and the lower cover 6, and the sub-modules 12 are arranged in parallel rows and columns; a boss 11 is provided at the connection between each sub-module 12 and the lower cover 6; the hybrid sensor 13 is mounted on the boss 11 in each sub-module 12 via a multilayer PCB planar Rogowski coil 1; as shown Figure 3 and Figure 4 As shown, there are four N, and each sub-module 12 is equipped with a hybrid sensor 13.

[0059] like Figure 4 As shown, each sub-module 12 consists of an upper molybdenum sheet 7, a semiconductor chip 8, a lower molybdenum sheet 9, and a silver pad 10. The molybdenum sheet 7 is connected to the upper end cover 5; the silver pad 10 is connected to the boss 11, and each sub-module is placed on its respective boss; the semiconductor chip 8 in each sub-module 12 is connected in series with the boss 11; the semiconductor chips 8 in the N sub-modules 12 are connected in parallel; measuring the current on each boss is equivalent to measuring the current flowing through the semiconductor chip; a hybrid sensor 13 is installed around the boss corresponding to each semiconductor chip; a hybrid sensor 13 is installed around the boss 11 corresponding to each sub-module 12.

[0060] A measurement method for a system for detecting chip-level current in a high-power semiconductor module, taking N=4 as an example, wherein the magnetoresistive chip detects the DC and low-frequency current components of the chip inside the high-power semiconductor module, and the main steps include:

[0061] Step 1: Perform zeroing and reset operations on the four magnetoresistive chips 3 respectively;

[0062] Step 2: Perform low-pass filtering on the measurement output to remove high-frequency signals and noise from the measurement results of magnetoresistive chip 3;

[0063] Step 3: Decouple the measurement results of the four magnetoresistive chips 3 to eliminate the influence of the current flowing through the other three semiconductor chips on the measurement of a specific magnetoresistive chip 3.

[0064]

[0065] The value of the x-th term in I is i x The current value passing through the x-th semiconductor chip 8 is the current value of the x-th semiconductor chip; the value m in the x-th row and y-th column of matrix M. xyThis represents the influence coefficient of the current of the y-th semiconductor chip 8 on the measurement result of the x-th magnetoresistive chip 8; the x-th value in V is v. x Let MI be the measured output value after filtering by the x-th magnetoresistive chip 3; the relationship is MI = V, where each term in M ​​and V can be measured experimentally: only semiconductor chip 8 is turned on, and other semiconductor chips 8 are turned off. At this time, i2 = i3 = i4 = 0, and each element of matrix V can be directly measured, thus obtaining the elements of the first column of matrix M.

[0066]

[0067] The elements of columns 2, 3, and 4 of matrix M can be derived similarly. Therefore, the current I flowing through each semiconductor core can be expressed as I = M. - 1 V is derived.

[0068] The Rogowski coil is used to detect the high-frequency current component of the chip inside the high-power semiconductor module. The main steps include:

[0069] Step 1: Input the output voltage of the Rogowski coil into the integrator;

[0070] Step 2: Perform high-pass filtering on the output of the integrator to filter out low-frequency signals and DC bias in the measurement results of magnetoresistive chip 4.

[0071] The results after decoupling the magnetoresistive chip 4 are then superimposed with the results after high-pass filtering of the corresponding Rogowski coil.

[0072] The above content is only for illustrating the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solution based on the technical concept proposed in this invention shall fall within the scope of protection of the claims of this invention.

Claims

1. A system for detecting chip-level current of a high-power semiconductor module, characterized by, It comprises a high-power semiconductor module and a hybrid sensor (13); the hybrid sensor (13) is sleeved on the high-power semiconductor module; The hybrid sensor (13) comprises a multilayer PCB planar Rogowski coil (1), a magnetoresistance chip (3) and a magnetoresistance chip PCB (4); the magnetoresistance chip (3) is arranged on the surface of the magnetoresistance chip PCB (4), and the magnetoresistance chip PCB (4) is connected with the multilayer PCB planar Rogowski coil (1) perpendicularly through a bent pin (2); The high-power semiconductor module comprises an upper end cover (5) and a lower end cover (6); N sub-modules (12) are arranged between the upper end cover (5) and the lower end cover (6); a boss (11) is arranged at the connection between each sub-module (12) and the lower end cover (6); the hybrid sensor (13) is sleeved on the boss (11) in each sub-module (12) through the multilayer PCB planar Rogowski coil (1), and the magnetoresistance chip PCB (4) is connected with the boss (11) perpendicularly; From the direction of the upper end cover (5) to the lower end cover (6), the sub-module (12) comprises an upper molybdenum sheet (7), a semiconductor chip (8), a lower molybdenum sheet (9) and a silver gasket (10) which are sequentially connected; the upper molybdenum sheet (7) is connected with the upper end cover (5); the silver gasket (10) is connected with the boss (11); The semiconductor chip (8) in each sub-module (12) is in series connection with the boss (11); the semiconductor chips (8) in the N sub-modules (12) are in parallel connection.

2. The system for detecting chip-level current of a high-power semiconductor module according to claim 1, wherein The number of N is at least two.

3. The system for detecting chip-level current of a high-power semiconductor module according to claim 2, wherein The number of N is four.

4. The method of claim 1, wherein the system for detecting chip-level current in a high power semiconductor module is characterized by, It comprises the following steps: S1: first, zero and reset operations are performed on N magnetoresistance chips (3); then, the output results of the N magnetoresistance chips (3) are measured and low-pass filtered to filter out high-frequency signals and noises in the measurement results of the magnetoresistance chips (3); then, signal coupling is performed on the measurement results of the N magnetoresistance chips (3) to obtain magnetoresistance measurement results; S2: the voltage output by the Rogowski coil in the multilayer PCB planar Rogowski coil (1) is input into an integrator to obtain output results; then, high-pass filtering is performed on the output results to obtain filtered Rogowski coil measurement results; S3: the obtained magnetoresistance measurement results and Rogowski coil measurement results are added.

5. The measuring method of a system for detecting chip-level current of a high-power semiconductor module according to claim 4, characterized by, In S1, the process of signal coupling on the measurement results of the N magnetoresistance chips (3) is as follows: First, matrices I, M and V are determined; wherein: ; Ith X item in matrix M i X is the current value of the Ith X submodule (12); the value of the Ith X row, Ith Y column in matrix M m XY represents the influence coefficient of the Ith Y submodule (12) on the measurement result of the Ith X submodule; the value of the Ith X item in V v X is the filtered measurement output value of the Ith X submodule (12); Wherein MI = V, the value of M and V is measured by experiment, the steps are as follows: only open the first sub-module (12), close other sub-modules (12), at this time i 2= i 3= i 4=… i N = 0, the elements of matrix V can be directly measured, that is, the elements of the first column of matrix M are obtained; ，……； M matrix 2, 3, 4, … N The column elements are obtained by analogy with the above steps, and the current value I flowing through each sub-module is obtained by I=M -1 V is calculated, and finally the reluctance measurement result is obtained.

6. The measuring method of a system for detecting chip-level current of a high-power semiconductor module according to claim 5, characterized by, From the direction of the upper end cover (5) to the lower end cover (6), the sub-module comprises an upper molybdenum sheet (7), a semiconductor chip (8), a lower molybdenum sheet (9) and a silver gasket (10) which are sequentially connected; the upper molybdenum sheet (7) is connected with the upper end cover (5); the silver gasket (10) is connected with the boss (11); the number of N is four; The process of signal coupling on the measurement results of the four magnetoresistance chips (3) is as follows: First, matrices I, M and V are determined; wherein: Ith x item value i x is the current value of the ith x semiconductor chip (8); the value of the ith x row, ith y column of the matrix M m xy represents the influence coefficient of the current of the ith y semiconductor chip (8) on the measurement result of the ith x semiconductor chip (8); the ith x item value of V v x is the filtered measurement output value of the ith x semiconductor chip (8); where M = V, the values of M and V are measured by experiment, the steps are: only open the first semiconductor chip (8), close the other semiconductor chips (8), at this time i 2= i 3= i 4 = 0, the elements of matrix V can be directly measured, that is, the elements of the first column of matrix M are obtained ； The elements in the 2nd, 3rd and 4th columns of the M matrix are obtained by analogy with the above steps, and then the current value I flowing through each sub-module is obtained by I=M -1 V is calculated, and finally the reluctance measurement result is obtained.

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