Semiconductor laser device with built-in topological flat band layer

Abstract

The application provides a semiconductor laser element with a built-in topological flat band layer, and relates to the technical field of semiconductor optoelectronic devices, which comprises, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper confinement layer, and a topological flat band layer arranged between the upper waveguide layer and the electron blocking layer; the topological flat band layer is any one or any combination of KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4 and Ca2NCl; the topological flat band layer has unique magnetic and superconducting properties, has flat band orbital characteristics and quasi-planar energy band hybridization, forms a stable closed ring Dirac nodal line which is not easy to be destroyed, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances mode gain, and at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, and reduces internal optical loss, so as to strengthen the stimulated emission of the laser element, and improve the lasing power and slope efficiency of the laser element.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser element with built-in topological flat band layer. BACKGROUND

[0002] Lasers are widely used in laser display, laser television, laser projector, communication, medical treatment, weapon, guidance, distance measurement, spectrum analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are various. The main types of lasers include solid-state, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long service life, simple and compact structure, and small size. There are great differences between laser and nitride semiconductor light-emitting diode, 1) laser is generated by stimulated emission of carriers, with small spectral half-width and high brightness. The output power of a single laser can reach W level, while the output power of a single light-emitting diode is in mW level; 2) the current density of laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diode, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect and more serious electron-hole mismatch, leading to more serious efficiency droop effect; 3) light-emitting diode is self-transition radiation without external action, and the incoherent light jumps from high energy level to low energy level, while laser is stimulated transition radiation, and the energy of induced photon should be equal to the energy level difference of electron transition. The generated photon and induced photon are homophase coherent light; 4) different principles: light-emitting diode is under the action of external voltage, and electron-hole jumps to quantum well or p-n junction to produce radiation recombination light, while laser needs to meet the lasing conditions, and must meet the carrier inversion distribution in the active region. The stimulated radiation light oscillates back and forth in the resonant cavity, propagates in the gain medium to amplify the light, and finally outputs laser. The nitride semiconductor laser has the following problems: high optical waveguide absorption loss, intrinsic carbon impurities in p-type semiconductor will compensate for the acceptor and destroy the p-type, low ionization rate of p-type doping, and a large number of un-ionized Mg acceptor impurities will cause internal optical loss to rise. The refractive index dispersion of the laser, the fluctuation of high-concentration carrier concentration affects the refractive index of the active layer, the limiting factor decreases with the increase of wavelength, and the mode gain of the laser decreases. SUMMARY

[0003] The purpose of the present application is to provide a semiconductor laser element with built-in topological flat band layer, which solves the problems existing in the prior art.

[0004] A semiconductor laser element with a built-in topological flat band layer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, an upper confinement layer, and a topological flat band layer (107) between the upper waveguide layer (104) and the electron blocking layer (105).

[0005] As a preferred technical solution of the present application, the topological flat band layer (107) has singular magnetic and superconducting properties, has flat band orbital characteristics and quasi-planar energy band hybridization, forms a stable closed ring-shaped Dirac nodal line that is not easily damaged, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances mode gain, and at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, and reduces internal optical loss, thereby strengthening the stimulated emission of the laser element and improving the lasing power and slope efficiency of the laser element.

[0006] As a preferred technical solution of the present application, the topological flat band layer is any one or any combination of KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4, and Ca2NCl.

[0007] As a preferred technical solution of the present application, the topological flat band layer includes, but is not limited to, the following structures:

[0008] KMn6Bi5 / KAg(CN)2, KMn6Bi5 / Pb2SbO7, KMn6Bi5 / Rb2CaH4, KMn6Bi5 / Ca2NCl, KAg(CN)2 / Pb2SbO7, KAg(CN)2 / Rb2CaH4, KAg(CN)2 / Ca2NCl, Pb2SbO7 / Rb2CaH4, Pb2SbO7 / Ca2NCl, Rb2CaH4 / Ca2NCl.

[0009] As a preferred technical solution of the present application, the topological flat band layer includes, but is not limited to, the following structures:

[0010] KMn6Bi5 / KAg(CN)2 / Pb2SbO7, KMn6Bi5 / KAg(CN)2 / Rb2CaH4, KMn6Bi5 / KAg(CN)2 / Ca2NCl, KMn6Bi5 / Pb2SbO7 / Rb2CaH4, KMn6Bi5 / Pb2SbO7 / Ca2NCl, KMn6Bi5 / Rb2CaH4 / Ca2NCl, KAg(CN)2 / Pb2SbO7 / Rb2CaH4, KAg(CN)2 / Pb2SbO7 / Ca2NCl, KAg(CN)2 / Rb2CaH4 / Ca2NCl, Pb2SbO7 / Rb2CaH4 / Ca2NCl.

[0011] As a preferred technical solution of the present application, the arbitrary combination of the topological flat band layer includes the following four combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots and the like, but is not limited to the following structures:

[0012] KMn6Bi5 / KAg(CN)2 / Pb2SbO7, KMn6Bi5 / KAg(CN)2 / Rb2CaH4, KMn6Bi5 / KAg(CN)2 / Ca2NCl, KMn6Bi5 / Pb2SbO7 / Rb2CaH4, KMn6Bi5 / Pb2SbO7 / Ca2NCl, KMn6Bi5 / Rb2CaH4 / Ca2NCl, KAg(CN)2 / Pb2SbO7 / Rb2CaH4, KAg(CN)2 / Pb2SbO7 / Ca2NCl, KAg(CN)2 / Rb2CaH4 / Ca2NCl, Pb2SbO7 / Rb2CaH4 / Ca2NCl.

[0013] As a preferred technical solution of the present application, the arbitrary combination of the topological flat band layer includes the following five combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots and the like, but is not limited to the following structures:

[0014] KMn6Bi5 / KAg(CN)2 / Pb2SbO7 / Rb2CaH4 / Ca2NClO2.

[0015] As a preferred technical solution of the present application, the thickness of the topological flat band layer is 5-500 nm.

[0016] As a preferred technical solution of the present application, the lower confinement layer, the lower waveguide layer, the active layer, the upper waveguide layer, the electron blocking layer, and the upper confinement layer include any one or any multi-combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0017] As a preferred technical scheme of the present application, the substrate comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0018] Compared with the prior art, the present application has the following advantages:

[0019] In the scheme of the present application:

[0020] A topological flat band layer is arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the topological flat band layer is any one or any combination of KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4 and Ca2NCl; the topological flat band layer has singular magnetic and superconducting properties and has flat band orbital characteristics, which strengthens the stimulated radiation of the laser element, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 A structure schematic diagram of a semiconductor laser element with a built-in topological flat band layer is provided in the present application.

[0022] Indicated in the figure:

[0023] 100: substrate; 101: lower confinement layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer; 105: electron blocking layer; 106: upper confinement layer; 107: topological flat band layer. DETAILED DESCRIPTION

[0024] In order to make the objects, technical schemes and advantages of the embodiments of the present application clearer, the technical schemes in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments.

[0025] Therefore, the following detailed description of the embodiments of the present application is not intended to limit the scope of the claimed application, but only represents some embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative labor are within the scope of protection of the present application.

[0026] It should be noted that the embodiments in the present application and the features and technical schemes in the embodiments can be combined with each other without conflict.

[0027] Embodiment 1

[0028] Referring to Figure 1 The embodiment provides a technical scheme: a semiconductor laser element with a built-in topological flat band layer, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106. A topological flat band layer 107 is arranged between the upper waveguide layer 104 and the electron blocking layer 105.

[0029] The topological flat band layer 107 has unique magnetic and superconducting properties, has flat band orbital characteristics and quasi-planar energy band hybridization, forms a stable closed ring Dirac nodal line that is not easy to be destroyed, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances the mode gain, and at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, and reduces internal optical loss, thereby strengthening the stimulated emission of the laser element and improving the lasing power and slope efficiency of the laser element. The topological flat band layer 107 is any one of KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4, and Ca2NCl.

[0030] The thickness of the topological flat band layer 107 is 5-500 nm.

[0031] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 comprise any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0032] The substrate 100 comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0033] Embodiment 2

[0034] Referring to Figure 1The embodiment provides a technical scheme: a semiconductor laser element with a built-in topological flat band layer, which comprises, from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a topological flat band layer 107 arranged between the upper waveguide layer 104 and the electron blocking layer 105.

[0035] The topological flat band layer 107 has singular magnetic and superconducting properties, has flat band orbital characteristics and quasi-plane energy band hybridization, forms a stable closed ring Dirac nodal line which is not easy to be destroyed, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances the mode gain, and at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, reduces internal optical loss, thereby strengthens the stimulated emission of the laser element, and improves the lasing power and slope efficiency of the laser element.

[0036] The topological flat band layer 107 includes, but is not limited to, the following structures: heterojunction, superlattice, quantum well, core-shell structure, quantum dot, and the like.

[0037] KMn6Bi5 / KAg(CN)2, KMn6Bi5 / Pb2SbO7, KMn6Bi5 / Rb2CaH4, KMn6Bi5 / Ca2NCl, KAg(CN)2 / Pb2SbO7, KAg(CN)2 / Rb2CaH4, KAg(CN)2 / Ca2NCl, Pb2SbO7 / Rb2CaH4, Pb2SbO7 / Ca2NCl, Rb2CaH4 / Ca2NCl.

[0038] The thickness of the topological flat band layer 107 is 5-500 nm.

[0039] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any multiple combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0040] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, a sapphire / SiO2 composite substrate, a sapphire / AlN composite substrate, a sapphire / SiNx composite substrate, a sapphire / SiO2 / SiNx composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0041] Embodiment 3

[0042] Please refer to Figure 1 The embodiment provides a technical scheme: a semiconductor laser element with an embedded topological flat band layer, which sequentially includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, an upper confinement layer 106, and a topological flat band layer 107 arranged between the upper waveguide layer 104 and the electron blocking layer 105.

[0043] The topological flat band layer 107 has unique magnetic and superconducting properties, has flat band orbital characteristics and quasi-planar energy band hybridization, forms a stable closed ring-shaped Dirac nodal line that is not easy to be destroyed, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances mode gain, and at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, and reduces internal optical loss, thereby strengthening the stimulated emission of the laser element and improving the lasing power and slope efficiency of the laser element.

[0044] Any combination of the topological flat band layer 107 includes, but is not limited to, the following structures:

[0045] KMn6Bi5 / KAg(CN)2 / Pb2SbO7, KMn6Bi5 / KAg(CN)2 / Rb2CaH4, KMn6Bi5 / KAg(CN)2 / Ca2NCl, KMn6Bi5 / Pb2SbO7 / Rb2CaH4, KMn6Bi5 / Pb2SbO7 / Ca2NCl, KMn6Bi5 / Rb2CaH4 / Ca2NCl, KAg(CN)2 / Pb2SbO7 / Rb2CaH4, KAg(CN)2 / Pb2SbO7 / Ca2NCl, KAg(CN)2 / Rb2CaH4 / Ca2NCl, Pb2SbO7 / Rb2CaH4 / Ca2NCl.

[0046] The thickness of the topological flat band layer 107 is 5-500 nm.

[0047] The lower confining layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confining layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0048] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0049] Embodiment 4

[0050] Please refer to Figure 1 The embodiment provides a technical solution: a semiconductor laser element with an embedded topological flat band layer. The semiconductor laser element with an embedded topological flat band layer includes, from bottom to top, a substrate 100, a lower confining layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confining layer 106. A topological flat band layer 107 is provided between the upper waveguide layer 104 and the electron blocking layer 105.

[0051] The topological flat band layer 107 has unique magnetic and superconducting properties, has flat band orbital characteristics and quasi-planar energy band hybridization, forms a stable closed ring Dirac nodal line that is not easily damaged, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances mode gain, and at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, and reduces internal optical loss, thereby strengthening the stimulated emission of the laser element and improving the lasing power and slope efficiency of the laser element.

[0052] Any combination of the topological flat band layer 107 includes the following four combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and other structures, but is not limited to the following structures:

[0053] KMn6Bi5 / KAg(CN)2 / Pb2SbO7 / Rb2CaH4, KMn6Bi5 / KAg(CN)2 / Pb2SbO7 / Ca2NCl, KMn6Bi5 / KAg(CN)2 / Rb2CaH4 / Ca2NCl, KMn6Bi5 / Pb2SbO7 / Rb2CaH4 / Ca2NCl, KAg(CN)2 / Pb2SbO7 / Rb2CaH4 / Ca2NCl.

[0054] The thickness of the topological flat band layer 107 is 5-500 nm.

[0055] The lower confining layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confining layer 106 comprise any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0056] The substrate 100 comprises any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0057] Embodiment 5

[0058] See Figure 1 The embodiment provides a technical scheme of a semiconductor laser element with a built-in topological flat band layer. The semiconductor laser element with a built-in topological flat band layer comprises, from bottom to top, a substrate 100, a lower confining layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confining layer 106. The topological flat band layer 107 is arranged between the upper waveguide layer 104 and the electron blocking layer 105.

[0059] The topological flat band layer 107 has unique magnetic and superconducting properties, has flat band orbital characteristics and quasi-planar band hybridization, forms a stable closed ring Dirac nodal line that is not easy to be destroyed, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances the mode gain, at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, and reduces internal optical loss, thereby strengthening the stimulated emission of the laser element and improving the lasing power and slope efficiency of the laser element.

[0060] Any combination of the topological flat band layer 107 includes the following five combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dots, and the like, but is not limited to the following structures: KMn6Bi5 / KAg(CN)2 / Pb2SbO7 / Rb2CaH4 / Ca2NClO2.

[0061] The thickness of the topological flat band layer 107 is 5-500 nm.

[0062] The lower confinement layer 101, the lower waveguide layer 102, the active layer 103, the upper waveguide layer 104, the electron blocking layer 105, and the upper confinement layer 106 include any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

[0063] The substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0064] Compared with the prior art, the present application has the following advantages: a topological flat band layer is arranged between the active layer and the upper waveguide layer and between the active layer and the lower waveguide layer; the topological flat band layer is any one or any combination of KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4, and Ca2NCl; the topological flat band layer 107 has unique magnetic and superconducting properties, has flat band orbital characteristics and quasi-planar energy band hybridization, forms a stable closed ring Dirac nodal line that is not easy to be destroyed, reduces energy dispersion, induces reduced refractive index dispersion, improves the confinement factor, enhances mode gain, at the same time, generates in-plane anisotropy and vibrational anisotropy, reduces optical waveguide absorption loss, and reduces internal optical loss, thereby strengthening the stimulated emission of the laser element and improving the lasing power and slope efficiency of the laser element.

[0065] The above examples are only used to illustrate the technical solutions described in the present application and do not limit the present application. Although the present application has been described in detail with reference to the above embodiments, the present application is not limited to the above specific embodiments. Therefore, any modification or equivalent replacement of the present application; and all technical solutions and improvements that do not deviate from the spirit and scope of the application are all included in the scope of the claims of the present application.

Claims

1. A semiconductor laser device with built-in topological flatband layer, comprising, in order from bottom to top, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper confinement layer (106), characterized in that: Topological flat band layers (107) are arranged between the upper waveguide layers (104) and the electron blocking layers (105); The topological flat band layers (107) have singular magnetic properties and superconductivity, have flat band orbital characteristics and quasi-planar energy band hybridization, form stable closed ring-like Dirac nodal lines that are not easy to be destroyed, reduce energy dispersion, induce reduced refractive index dispersion, improve the confinement factor, enhance the mode gain, at the same time, produce in-plane anisotropy and vibrational anisotropy, reduce optical waveguide absorption loss, reduce internal optical loss, thereby strengthen the stimulated emission of the laser element, and improve the lasing power and slope efficiency of the laser element; The topological flat band layers (107) are any one or any combination of KMn6Bi5, KAg(CN)2, Pb2SbO7, Rb2CaH4, and Ca2NCl.

2. A semiconductor laser device having a built-in topological flat band layer as set forth in claim 1, characterized in that, Any combination of the topological flat band layers (107) includes the following binary combination heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures, but is not limited to the following structures: KMn6Bi5 / KAg(CN)2, KMn6Bi5 / Pb2SbO7, KMn6Bi5 / Rb2CaH4, KMn6Bi5 / Ca2NCl, KAg(CN)2 / Pb2SbO7, KAg(CN)2 / Rb2CaH4, KAg(CN)2 / Ca2NCl, Pb2SbO7 / Rb2CaH4, Pb2SbO7 / Ca2NCl, and Rb2CaH4 / Ca2NCl.

3. A semiconductor laser device having a built-in topological flatband layer as described in claim 1, wherein Any combination of the topological flat band layers (107) includes the following ternary combination heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures, but is not limited to the following structures: KMn6Bi5 / KAg(CN)2 / Pb2SbO7, KMn6Bi5 / KAg(CN)2 / Rb2CaH4, KMn6Bi5 / KAg(CN)2 / Ca2NCl, KMn6Bi5 / Pb2SbO7 / Rb2CaH4, KMn6Bi5 / Pb2SbO7 / Ca2NCl, KMn6Bi5 / Rb2CaH4 / Ca2NCl, KAg(CN)2 / Pb2SbO7 / Rb2CaH4, KAg(CN)2 / Pb2SbO7 / Ca2NCl, KAg(CN)2 / Rb2CaH4 / Ca2NCl, and Pb2SbO7 / Rb2CaH4 / Ca2NCl.

4. A semiconductor laser device having a built-in topological flat band layer as set forth in claim 1, characterized in that, Any combination of the topological flat band layers (107) includes the following quaternary combination heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures, but is not limited to the following structures: KMn6Bi5 / KAg(CN)2 / Pb2SbO7 / Rb2CaH4, KMn6Bi5 / KAg(CN)2 / Pb2SbO7 / Ca2NCl, KMn6Bi5 / KAg(CN)2 / Rb2CaH4 / Ca2NCl, KMn6Bi5 / Pb2SbO7 / Rb2CaH4 / Ca2NCl, and KAg(CN)2 / Pb2SbO7 / Rb2CaH4 / Ca2NCl.

5. A semiconductor laser device having a built-in topological flatband layer as described in claim 1, wherein Any combination of the topological flat band layer (107) includes the following five combinations of heterojunctions, superlattices, quantum wells, core-shell structures, quantum dot structures, but not limited to the following structures: KMn6Bi5 / KAg(CN)2 / Pb2SbO7 / Rb2CaH4 / Ca2NClO2.

6. A semiconductor laser device having a built-in topological flatband layer as described in claim 1, wherein The thickness of the topological flat band layer (107) is 5-500 nm.

7. A semiconductor laser device having a built-in topological flatband layer as described in claim 1, wherein The lower confining layer (101), the lower waveguide layer (102), the active layer (103), the upper waveguide layer (104), the electron blocking layer (105), and the upper confining layer (106) include any one or any multi-combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, SiC, Ga2O3, BN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, AlInAs, AlInP, AlGaP, InGaP.

8. A semiconductor laser device having a built-in topological flatband layer as described in claim 1, wherein The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, sapphire / SiO2 / SiNx composite substrate, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

Images