An integrated reaction bonding system and method of manufacture

Abstract

This application discloses an integrated reactive bonding system, comprising: an upper substrate, a reactive exothermic system, and a lower substrate; wherein the reactive exothermic system is perpendicular to the upper and lower substrates; the reactive exothermic system includes at least two components; each of the at least two components has a bottom end and an open end; the bottom end is attached to the surface of the lower substrate; the sides of the at least two components are in contact with each other. This reactive bonding system, as a heat source, is easily ignited, provides stable exothermic heating, and does not cause heat reduction due to interfacial atomic mixing. It is particularly suitable for integrating heat sources on substrates with poor thermal conductivity in microsystems such as semiconductors and MEMS. By changing the component ratio, the heat release of the system can be adjusted, achieving low-temperature, low-stress bonding of on-chip devices.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of microelectronic and micro-electro-mechanical system, and in particular to an integrated reaction bonding system and a preparation method, which utilizes a local heat source to realize micron-scale bonding. BACKGROUND

[0002] Micro-electro-mechanical system is a micro system integrating micro mechanical elements, sensing elements, signal processing elements and execution elements. With the development of micro-electro-mechanical system, the requirements for packaging and bonding are becoming more and more demanding. Common bonding techniques for micro-electro-mechanical devices include direct bonding, anodic bonding and eutectic bonding. In the above three bonding techniques, higher temperature and greater pressure are necessary process parameters for achieving good connection, and the micro-electro-mechanical device as a whole needs to be heated, and the temperature-sensitive micro system is easily damaged by the above bonding process. Therefore, it is of great significance to study local heat source and low-damage bonding technology for micro-electro-mechanical system.

[0003] The micron-scale local heat source technology is an effective method to solve the above problems.

[0004] Reaction nanomultilayer film is a new structure of nanometer energetic material, which is generally composed of A / B two materials capable of mixed exothermic reaction arranged alternately. The atoms of the two materials are fully mixed to form an intermediate compound, releasing a large amount of heat, and the heat released by the reaction accelerates the mixing of nearby atoms, which can form self-propagating propagation. Under the excitation of external energy, the reaction multilayer film can undergo self-propagating reaction, and can obtain high temperature of thousands of degrees in an instant to melt the filler, and at the same time realize the connection of materials by the reaction products. The characteristics of rapid heating and rapid cooling (milliseconds) of the reaction multilayer film make it can be used as a micron-scale local heat source, and the heat affected zone is limited to the surface interface area, which will not have a thermal effect on the whole device or component.

[0005] From the aspect of morphology, the reaction multilayer film is divided into self-supporting film and attached substrate film. The thickness of the self-supporting multilayer film is in the range of tens of microns, which has been relatively maturely used for the connection of macroscopic objects, such as metal / ceramic connection, metal / metal connection, etc., and utilizes its self-propagating exothermic as the heat source for brazing. However, in the case of micron-scale such as microelectronic and micro-electro-mechanical system, it is not convenient to realize micro-scale connection by cutting the self-supporting nanomultilayer film according to the shape and size. Therefore, the reaction multilayer film is deposited on the substrate and the self-propagating reaction exothermic is used to realize the welding of the micron-scale connection frame, which is an important development direction for realizing the packaging and bonding of micro system. This technology is also called integrated reaction bonding technology, and the nanomultilayer film used is called integrated reaction multilayer system.

[0006] The thickness of the integrated reaction multilayer system is generally several microns, and its process can be integrated into the micro-nano processing flow of microelectronic and micro-electro-mechanical system.

[0007] From the structure, the current application of the reaction multilayer film is all parallel to the substrate arranged alternately. The advantage of parallel substrate arrangement is convenient to prepare. Using magnetron sputtering or electron beam evaporation plating film technology alternately deposited two components, the thickness and microstructure of each layer can be easily controlled, and the reaction multilayer film with adjustable period and total thickness can be obtained.

[0008] But the present application found that the reaction multilayer film parallel to the substrate also has many disadvantages. First, in the deposition process, the particles carry a certain amount of energy, causing the intermixing of the atoms at the interface of the two components, forming a compound intermixing layer. The intermixing layer consumes the energy of the nanometer multilayer film, reducing the heat release of the reaction system. Secondly, with the increase of thickness, the heat accumulation effect is significant, and the synchronous self-reaction may occur during the deposition process, that is, the mixed exothermic reaction of the two components that have been deposited, causing the prepared reaction multilayer film to reduce or even lose the exothermic ability. This situation often occurs on substrates with poor thermal conductivity, such as when depositing reaction multilayer films on Si substrates, when the critical thickness (~1 μm) is exceeded, synchronous self-reaction during deposition often occurs. This effect can be reduced to some extent when deposited on a substrate with good thermal conductivity. However, in the subsequent ignition process, the excitation energy will be dissipated by the substrate with good thermal conductivity, making it difficult to ignite or even impossible to ignite. Even if the reaction multilayer film can be ignited, it will not be able to sustain the reaction due to heat dissipation, losing the self-sustaining effect. Therefore, there is a contradiction in depositing reaction multilayer films on substrates, that is, substrates with poor thermal conductivity are prone to synchronous self-reaction during deposition, and substrates with good thermal conductivity are often difficult to ignite or react continuously. Thirdly, the nanometer multilayer film prepared by magnetron sputtering often has a large internal stress. Previous studies have shown that thin films with a thickness of >5 μm are prone to peeling from the substrate due to excessive internal stress. Therefore, it is also difficult to increase the heat release by increasing the thickness to achieve self-sustaining exothermic.

[0009] In summary, the integrated reaction multilayer film system can be used as a microscale local heat source for microsystem packaging and bonding, but the parallel component to the substrate method has some difficulties. SUMMARY

[0010] In order to solve the above-mentioned deficiencies in the art, the present application aims to provide an integrated reaction bonding system and a preparation method, which uses a component perpendicular to the substrate to prepare an integrated reaction film system.

[0011] According to one aspect of the present application, an integrated reaction bonding system is provided, comprising: an upper substrate, a reaction exothermic system, and a lower substrate;

[0012] The reaction exothermic system comprises at least two components;

[0013] The contact surface of the at least two components is vertically arranged between the upper substrate and the lower substrate;

[0014] The at least two components have a bottom end and an open end;

[0015] The bottom end is attached to the lower substrate surface;

[0016] The side surfaces of the at least two components contact each other.

[0017] According to some embodiments of the present application, the components are columnar.

[0018] According to some embodiments of the present application, the components have the same or different heights;

[0019] The components have the same or different widths.

[0020] According to some embodiments of the present application, the width of the components is 200-1000 nm; and the height of the components is 100 nm-5 microns.

[0021] According to some embodiments of the present application, when the components are two groups, the material of the first group is selected from any one of aluminum, carbon, and silicon;

[0022] The material of the second group is selected from any one of titanium, zirconium, hafnium, vanadium, niobium, tantalum, nickel, palladium, and platinum.

[0023] According to some embodiments of the present application, when the components are more than two groups, the material of the other components, except the first and second groups, is selected from any one of aluminum, carbon, silicon, titanium, zirconium, hafnium, vanadium, niobium, tantalum, nickel, palladium, platinum, indium, tin, and lead;

[0024] The first group, the second group, and the other groups are not the same material.

[0025] According to some embodiments of the present application, the mixing enthalpy between the at least two components is less than 0.

[0026] According to some embodiments of the present application, when there are three groups of components, and the material of the third group is selected from one of indium, tin, and lead, the proportion of the third group does not exceed 50% of the total components.

[0027] According to another aspect of the present application, a method for preparing the integrated reaction bonding system is provided, comprising:

[0028] Using an etching process or a stripping process to prepare a periodic structure of the first group of components perpendicular to the lower substrate surface;

[0029] Using ion beam etching to remove the surface oxide layer of the first group of components;

[0030] Using a magnetron sputtering or electron beam evaporation deposition process to prepare the second group of components in the gap region of the periodic structure of the first group of components; and

[0031] covering the first group of elements and the second group of elements with a substrate;

[0032] or,

[0033] using an etching process or a stripping process to prepare a periodic structure of the first group of elements perpendicular to the surface of the lower substrate;

[0034] using ion beam etching to remove the surface oxide layer of the first group of elements;

[0035] using a micro-nano machining etching or stripping process to prepare a periodic structure of the second group of elements perpendicular to the surface of the lower substrate;

[0036] using a magnetron sputtering or electron beam evaporation deposition process to prepare the third group of elements in the gap region of the periodic structure of the first and second groups of elements, and repeating the step to prepare other groups of elements; and

[0037] covering the first group of elements, the second group of elements and the third group of elements with a substrate.

[0038] Compared with the prior art, the present application has at least the following beneficial effects:

[0039] The present application provides an integrated reaction bonding system, comprising: an upper substrate, a reaction exothermic system and a lower substrate; wherein the reaction exothermic system comprises at least two groups of elements and is perpendicular to the upper and lower substrates. The above reaction bonding system serves as a heat source, is easy to ignite, has stable heat release, and does not cause the problem of heat reduction caused by the formation of an interface atomic intermixing. It is particularly suitable for integrating a heat source on a substrate with poor thermal conductivity in a microsystem such as a semiconductor or a MEMS. By changing the proportion of the groups of elements, the heat release of the system is adjusted to realize low-temperature and low-stress bonding of a device on a chip.

[0040] The present application also provides a preparation method of an integrated reaction bonding system, which is simple to operate and is not easy to accumulate heat. It does not cause synchronous self-reaction accompanying the deposition process due to the heat accumulation effect, and can avoid the problem of reducing or even losing the heat release capacity of the reaction multilayer film after preparation. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 is a schematic diagram of an integrated reaction bonding system of an example embodiment of the present application;

[0042] Figure 2 is a schematic diagram of the group of elements of the integrated reaction bonding system of an example embodiment of the present application;

[0043] Figure 3 is a top view of the group of elements of the integrated reaction bonding system of an example embodiment of the present application;

[0044] Figure 4Top view of components of an integrated reaction bonding system of an example embodiment of the present application;

[0045] Figure 5 Top view of component arrangement of an integrated reaction bonding system of an example embodiment of the present application;

[0046] Figure 6 Bonding site view of an integrated reaction bonding system of an example embodiment of the present application;

[0047] Figure 7 Flow diagram of an integrated reaction bonding system of an example embodiment of the present application;

[0048] Figure 8 SEM image of a parallel substrate arrangement in a comparative example of the present application;

[0049] Figure 9 SEM image of a vertical substrate arrangement of an example embodiment of the present application;

[0050] Figure 10 SEM image of a vertical reaction system of an example embodiment of the present application (alternate arrangement);

[0051] Figure 11 SEM image of a vertical reaction system of an example embodiment of the present application (periodic arrangement). DETAILED DESCRIPTION

[0052] The technical solutions of the present application will be described clearly and completely below in conjunction with the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making any creative effort fall within the scope of protection of the present application.

[0053] It is particularly pointed out that similar substitutions and modifications made to the present application are obvious to those skilled in the art, and they are all considered to be included in the present application. The relevant personnel can obviously make changes or appropriate changes and combinations to the methods and applications described herein without departing from the content, spirit and scope of the present application, to realize and apply the technology of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application.

[0054] Unless otherwise specified in the present application, the conventional conditions or the conditions recommended by the manufacturer are used, and the raw materials or excipients used, and the reagents or instruments used, if the manufacturer is not specified, are all conventional products that can be obtained by purchase.

[0055] The present application will be described in detail below.

[0056] The application discloses an integrated reaction bonding system and a preparation method thereof. In a conventional multilayer film reaction system, the contact surface (or interface) between each component of the multilayer film is parallel to the substrate. The interface between each component of the integrated reaction nanomultilayer film of the application is perpendicular to the substrate, and therefore, the integrated reaction system can be called a vertical reaction system. The vertical reaction system is composed of at least two materials capable of mixed exothermic reaction and arranged in an alternating and periodic structure. The vertical reaction system can be used as a bonding heat source under the excitation of electricity, light, heat or force. As a local heat source, the brazing filler pre-prepared on the surface of the substrate can be melted to realize metallization connection without affecting the temperature-sensitive components in the microsystem. In the preparation process, a material is first grown on the surface of the substrate by using a photolithography stripping technology of micro-nanofabrication to form a layered or columnar periodic structure perpendicular to the substrate; and then a second material is grown to fill the gaps between the first material to obtain a periodic structure in which the two materials are closely combined.

[0057] The vertical substrate integrated reaction film system of the application

[0058] 1. Structure composition

[0059] The reaction exothermic system comprises a substrate and an exothermic system.

[0060] The reaction exothermic system comprises at least two components A and B, and is in a columnar shape, with one end of the end surface vertically attached to the substrate and the other end open.

[0061] The columnar side surfaces of A and B are in contact with each other to form an A / B closely combined interface. The height of the A column and the B column can be the same or different, and the lateral dimension of the A column and the B column can be the same or different. The height of the A column and the B column is adjustable in the range of 100 nanometers to 5 micrometers, and the lateral dimension of the A column and the B column is adjustable in the range of 200 to 1000 nanometers. Figure 2 The columnar shape is selected from structures such as a cube and a hexagonal column which can be closely packed.

[0062] In the final bonding step, the open end is in close contact with the solder.

[0063] As shown in the schematic diagram of the integrated vertical reaction system as a heat source for welding the upper and lower substrates, Figure 1 The A / B component reaction system is prepared on the surface of the lower substrate by using micro-nanofabrication technology and vapor deposition technology, and the A column and the B column are grown vertically to the substrate. The solder is deposited on the surface of the upper substrate, and the solder is in contact with the A / B reaction system. After excitation, the A / B component reaction exothermic reaction occurs, xA+yB→AxBy+ΔH, to generate a compound AxBy and release heat ΔH. The compound AxBy and the melted solder are used as a connecting material to weld the upper and lower substrates together to realize bonding.

[0064] As shown in the schematic diagram of the integrated vertical reaction system as a heat source for welding the upper and lower substrates, Figure 2A / B group elements constitute a vertical substrate reaction system. The lateral dimension LA and LB of A / B group elements are between 200 nm and 1000 nm, and the height H is between 100 nm and 5 microns. The number ratio of A / B group elements can be changed according to the heat release requirement.

[0065] According to some embodiments of the present application, the reaction heat release system of the present application can further comprise C, D, … more group elements. The shape and size requirements of C, D, … group elements are the same as those of A / B group elements. The basic requirement is that the group elements are in close contact with each other, forming an alternating arrangement or a periodic arrangement (arrangement method as shown in Figure 3 、 4 , 5, the SEM diagram of the above arrangement is shown in Figure 10 、 11 ).

[0066] The number ratio of A / B group elements can be adjusted. The heat release of A / B group elements is related to the number ratio of A / B group elements.

[0067] The positional relationship of A / B group elements can be adjusted. A group elements can be arranged continuously, and B group elements can be arranged continuously, forming a periodic structure in which A / B group elements are distributed at intervals in the vertical substrate direction Figure 5 ).

[0068] The ratio of C, D, … more group elements can be adjusted.

[0069] 2. Number ratio adjustment method between group elements

[0070] The mixing enthalpy between each group element is <0.

[0071] 3. Material selection

[0072] The heat release system of the present application can have a large mixing exothermic enthalpy because the mixing exothermic reaction can occur between each group element.

[0073] The material of A group element is selected from any one of aluminum (Al), carbon (C), and silicon (Si);

[0074] The material of B group element is selected from any one of titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), nickel (Ni), palladium (Pd), and platinum (Pt).

[0075] The materials of C group element and D group element are selected from any one of aluminum (Al), carbon (C), silicon (Si), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), nickel (Ni), palladium (Pd), platinum (Pt), indium (In), tin (Sn), and lead (Pb).

[0076] Among them, the ABCD… group elements are not the same kind of material.

[0077] When C, D… group elements are selected from indium (In), tin (Sn), lead (Pb), they play the role of solder, and are melted to achieve the purpose of soldering connection material when mixed exotherm.

[0078] Preparation of the vertical substrate integrated reaction film system of the application

[0079] The micro-nano processing technology includes: etching process or stripping process, wherein: etching process: first, depositing element thin film on the substrate by magnetron sputtering or electron beam evaporation, then uniformly coating photoresist, after exposure and development, using dry or wet etching process to etch the area of exposed element, forming the periodic structure of element;

[0080] Stripping process: first, uniformly coating photoresist, after exposure and development, depositing element thin film by magnetron sputtering or electron beam evaporation, then soaking in organic solution to dissolve the photoresist, obtaining the periodic structure of element.

[0081] Preparation of element A: using etching process or stripping process to prepare the periodic structure of element A on the substrate;

[0082] Preparation of element B: placing the substrate with element A in the vacuum cavity, using ion beam etching to remove the surface oxide layer of A, then using etching process or stripping process to prepare the periodic structure of element B, at this time B will fill the area between A elements on the substrate, until the height of B column is equal to (or greater than) the height of A column, forming the structure of A / B close combination.

[0083] Preparation of element C, D: if there is element C subsequently, stripping process is needed to prepare element B, on the basis of obtaining the periodic structure of A / B element, depositing element C according to the method of preparing element B as described above. The subsequent elements are sequentially similar.

[0084] Example 1

[0085] Preparation of superconducting quantum bit chip by integrated reaction bonding system of the application

[0086] 1) Ti patterning of lower substrate lithography exposure: after acetone and isopropanol ultrasonic cleaning of the substrate, spin coating photoresist PMMA MAA EL11 on the lower substrate at 2000r / min, baking the glue at 115℃ for 3min, the obtained uniform glue thickness is 1μm. Electron beam exposure pattern is used, electron beam irradiation dose is 1000, development is 1min, isopropanol IPA fixing is 30s. In order to remove the residual glue after exposure, plasma glue removal is used for 10min.

[0087] 2) Deposition of Ti on the lower substrate bonding site: Ti was prepared by e-beam evaporation in a base vacuum < 5e-8 Torr. First, ion beam etching (IBE) was used to remove the surface residue of the substrate, with a beam voltage of 300 V, a beam current of 12 mA, and a time of 3 min. Then the evaporation source was started, and the deposition rate was set to 5 nm / s, and the thickness of the Ti layer was 1 μm. The prepared sample was immersed in a methylpyrrolidone (NMP) solution for 12 hours, and after being taken out, isopropanol was used to clean and remove the residual NMP solution, and dry nitrogen was used for drying. The lateral size of the prepared Ti column was 200 nm, and the height was 1 μm. The Ti column spacing was 200 nm.

[0088] 3) Deposition of Al on the lower substrate bonding site: spin-coating photoresist PMMA MAA EL11 at 2000 r / min, and baking the photoresist at 115°C for 3 min. After exposure, develop for 1 min to remove the photoresist at the bonding site, and expose the substrate with the Ti periodic structure. To remove the residual photoresist after exposure, plasma stripping was used for 10 min. The lower substrate was placed in an e-beam evaporation device, and ion beam etching was used to remove the Ti surface oxide layer. The e-beam evaporation source was started, the deposition rate was set to 5 nm / s, and the thickness of the Al layer was 1 μm. An Al / Ti closely combined and alternating arrangement structure was obtained (as shown in FIG. 2). Figure 10 ).

[0089] 4) Deposition of indium on the upper substrate bonding site: spin-coating photoresist PMMA A4 at 2000 r / min, and baking the photoresist at 115°C for 3 min. After exposure, develop for 1 min to remove the photoresist at the indium column site. To remove the residual photoresist after exposure, plasma stripping was used for 10 min. The upper substrate was placed in an e-beam evaporation device to evaporate indium.

[0090] 5) Reaction bonding: using a flip-chip device to align the upper and lower substrates at the indium column site, applying a pressure of 10 N, and igniting the Al / Ti reaction structure by direct current excitation to form an Al-Ti compound, which melts the indium of the upper substrate and realizes good bonding of the upper and lower substrates.

[0091] Example 2

[0092] Integrated reaction bonding system for preparing a superconducting quantum bit chip

[0093] The difference from Example 1 is that the solder indium is directly prepared in the components of the integrated reaction system, so the upper substrate does not need to deposit indium again. The specific implementation steps are as follows:

[0094] 1) Ti photolithography exposure of the lower substrate: the same as in Example 1.

[0095] 2) Deposition of Ti on the lower substrate bonding site: the same as in Example 1.

[0096] 3) Deposition of Al at the bonding site of the lower substrate: spin-coating photoresist PMMA MAA EL11, 2000 r / min, baking of the photoresist 115 °C, 3 min. Electron beam exposure of the area where Al is to be deposited. For removal of the photoresist after exposure, plasma stripping for 10 min. Development for 1 min. The lower substrate is placed in the electron beam evaporation device. The surface oxide layer of Ti is removed by ion beam etching. The electron beam evaporation source is switched on. The deposition rate is 5 nm / s. The thickness of the Al layer is 1 pm. An Al / Ti periodic structure is obtained, with a gap for the solder indium.

[0097] 4) Deposition of indium (In) at the gap of the Al / Ti periodic structure of the lower substrate: spin-coating photoresist PMMA A4, 2000 r / min, baking of the photoresist 115 °C, 3 min. Development for 1 min after electron beam exposure. For removal of the photoresist after exposure, plasma stripping for 10 min. The photoresist at the bonding site is removed, exposing the substrate with the already deposited Al / Ti periodic structure. The lower substrate is placed in the electron beam evaporation device. The electron beam evaporation source is switched on. The deposition rate is 5 nm / s. The thickness of the In layer is 1 pm. An Al / Ti / In periodic structure is obtained.

[0098] 5) Reaction bonding: the upper and lower substrates are aligned using a flip-chip bonder. A pressure of 10 N is applied. The Al / Ti / In reaction structure is ignited by direct current excitation. An Al-Ti compound is formed, and the indium inside the reaction system is melted by the heat released, resulting in good bonding of the upper and lower substrates.

[0099] Example 3

[0100] Fabrication of a superconducting quantum bit chip using the integrated reaction bonding system of the present application

[0101] The fabrication method is the same as that of Example 1, except that the A component material is silicon (Si), the B component material is tantalum (Ta), and the arrangement is a periodic structure (e.g. Figure 11 ).

[0102] Example 4

[0103] Fabrication of a superconducting quantum bit chip using the integrated reaction bonding system of the present application

[0104] The fabrication method is the same as that of Example 2, except that the A component material is carbon (C), the B component material is palladium (Pd), and the C component material is tin (Sn).

[0105] Comparative Example 1

[0106] A superconducting quantum bit chip is fabricated using the conventional flip-chip bonding method.

[0107] The conventional method is to deposit indium at the flip chip bonding site of the upper and lower pieces, align the indium pillars, and then apply pressure and temperature to connect the indium pillars to each other. The preparation method is as follows:

[0108] (1) Expose the indium pillar pattern, apply glue evenly, bake, and expose to light.

[0109] (2) Thermal evaporation of indium, according to the equipment, weigh the required mass of indium according to the required thickness, heat the crucible until evaporation is complete, and the heating power is 300-400 W. Peel off and soak in the degreasing solution for 1-2 days.

[0110] (3) Flip chip bonding, use the microscope on both sides of the flip chip bonder to observe the upper and lower pieces at the same time, adjust the position to align the corresponding indium pillars. For example, if the indium pillar diameter is 50 microns and there are 100 indium pillars, apply a pressure of 3-5 Kg at room temperature and maintain for 3-5 minutes before removing.

[0111] The problem with the above conventional flip chip bonding method is that the indium pillars deform under pressure, the lateral dimension changes, and the distance between the indium pillar points and the surrounding devices needs to be reserved, the indium pillar point arrangement position is limited. If there are many indium pillar points, a larger pressure needs to be applied to achieve bonding, which can easily cause the upper and lower pieces to come into contact, resulting in a low yield. If there are fewer indium pillar points, the pressure on each indium pillar point is high, and the deformation of each indium pillar point is different from that of other indium pillar points, resulting in poor parallelism of the upper and lower pieces.

[0112] The integrated reaction bonding technology of the present application deposits a 1 μm aluminum / titanium (Al / Ti) reaction system at the bonding site of the lower piece, and after excitation, Al / Ti undergoes an exothermic reaction. Only 0.3 Kg of pressure needs to be applied to melt part of the indium pillars and achieve welding using the heat, and the indium pillars deform little, resulting in a high yield.

[0113] Comparative Example 2

[0114] The reaction system of the prior art reaction multilayer film is prepared parallel to the substrate, and the preparation method is as follows:

[0115] (1) A 50 nm Al layer is deposited on a Si / SiO2 substrate using a magnetron sputtering technique;

[0116] (2) A 50 nm Nb layer is deposited to cover the surface of the Al layer;

[0117] (3) Repeat steps (1) and (2) to form an Al / Nb nanometer multilayer film, and the interface is parallel to the surface of the substrate.

[0118] The sample prepared by the above process is as follows: Figure 8As shown, the Al / Nb reaction film is deposited parallel to the substrate, the Si / SiO2(300 nm) substrate has poor heat conduction, and the heat accumulation causes the Al layer and the Nb layer to deposit synchronously and self-react to form an Al-Nb compound, and the cross-sectional morphology is a loose porous structure as shown in the figure. Because the heat accumulation causes the Al and Nb to react during deposition, the Al / Nb interface is unclear and cannot be distinguished, and the system loses the heat release capability.

[0119] An Al / Nb sample prepared by the vertical substrate method of the present application is as shown in FIG. 4. Figure 9 As shown, the Al / Nb reaction film is deposited parallel to the substrate, the Si / SiO2(300 nm) substrate has poor heat conduction, and the heat accumulation causes the Al layer and the Nb layer to deposit synchronously and self-react to form an Al-Nb compound, and the cross-sectional morphology is a loose porous structure as shown in the figure. Because the heat accumulation causes the Al and Nb to react during deposition, the Al / Nb interface is unclear and cannot be distinguished, and the system loses the heat release capability.

[0120] The above examples are only used to help understand the method of the present application and its core idea. It should be noted that for those skilled in the art, without departing from the principles of the present application, the present application can be improved and modified in several ways, and these improvements and modifications also fall within the protection scope of the claims of the present application.

Claims

1. An integrated reaction-bonded system, characterized by, The integrated reaction bonding system comprises: an upper substrate, a reaction exothermic system and a lower substrate; wherein the reaction exothermic system comprises at least two components; the contact surfaces of the at least two components are arranged vertically between the upper substrate and the lower substrate; the at least two components have a bottom end and an open end; the bottom end is attached to the surface of the lower substrate; the side surfaces of the at least two components are in contact with each other.

2. The integrated reaction bonding system of claim 1, wherein, The components are in the shape of a column.

3. The integrated reaction bonding system of claim 1, wherein, The components have the same or different heights; The components have the same or different widths.

4. The integrated reaction bonding system of claim 3, wherein, The width of the components is 200-1000 nm; the height of the components is 100 nm-5 microns.

5. The integrated reaction bonding system of claim 1, wherein, When the components are two groups, the material of the first group is selected from any one of aluminum, carbon and silicon; the material of the second group is selected from any one of titanium, zirconium, hafnium, vanadium, niobium, tantalum, nickel, palladium and platinum.

6. The integrated reaction bonding system according to claim 5, wherein when the components are more than two groups, the material of the other components except the first group and the second group is selected from any one of aluminum, carbon, silicon, titanium, zirconium, hafnium, vanadium, niobium, tantalum, nickel, palladium, platinum, indium, tin and lead; wherein the first group, the second group and the other groups are not the same material.

7. The integrated reaction-bonded system of any of claims 1-6, wherein, The mixing enthalpy between the at least two components is <0.

8. The integrated reaction bonding system of claim 7, wherein, When there are three groups of components and the material of the third group is selected from one of indium, tin and lead, the proportion of the third group does not exceed 50% of the total components.

9. A method of producing the integrated reaction-bonded system of any one of claims 1-8, characterized by, The method comprises: preparing a periodic structure of the first group of components perpendicular to the surface of the lower substrate by etching or peeling process; removing the surface oxide layer of the first group of components by ion beam etching; preparing the second group of components in the gap area of the periodic structure of the first group of components by magnetron sputtering or electron beam evaporation deposition process; and covering the upper substrate above the prepared first group of components and the second group of components; or, The method comprises: preparing a periodic structure of the first group of components perpendicular to the surface of the lower substrate by etching or peeling process; removing the surface oxide layer of the first group of components by ion beam etching; preparing a periodic structure of the second group of components perpendicular to the surface of the lower substrate by micro-nano machining etching or peeling process; preparing the third group of components in the gap area of the periodic structure of the first and second groups of components by magnetron sputtering or electron beam evaporation deposition process, and repeating the step to prepare other groups of components; and covering the upper substrate above the prepared first group of components, the second group of components and the third group of components. ​

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