Semiconductor laser element with high capacitance interlayer

Abstract

This invention relates to the technical field of semiconductor optoelectronic devices, specifically to a semiconductor laser element with a high-capacitance insertion layer. Structurally, from bottom to top, it comprises a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer. At least one high-capacitance insertion layer is present between the upper waveguide layer and the electron blocking layer and / or between the lower waveguide layer and the lower confinement layer; the high-capacitance insertion layer is Nb2CT. x Ti3C2T x Mo2Ti2C3T x The semiconductor laser element is composed of one or any combination of In2Se3, AgInP2S6, MgIn2S4, and CdIn2S4; the high-capacitance intercalation layer has a specific capacitance of 200-1000 F / g at a scan rate of 10V / s; and the power density of the semiconductor laser element is 7-50 mW / cm². 2 The formation of a strong capacitance can improve the ESD throughput of the laser's HBM human body mode from over 95% at 1KV to over 95% at 2KV, and enhance hole mobility and hole injection efficiency, thereby improving the laser's quantum efficiency.

Description

Technical Field

[0001] This invention relates to the technical field of semiconductor optoelectronic devices, and in particular to a semiconductor laser element having a high-capacitance insertion layer. Background Technology

[0002] Lasers are widely used in laser displays, laser TVs, laser projectors, communications, medical applications, weaponry, guidance, ranging, spectral analysis, cutting, precision welding, and high-density optical storage. There are many types of lasers, and they can be classified in various ways, mainly including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have advantages such as small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization. Lasers differ significantly from nitride semiconductor light-emitting diodes (LEDs): 1) Lasers are generated by stimulated emission of charge carriers, resulting in a narrow spectral width at half maximum (FW / HW) and very high brightness; a single laser can have an output power in the W range. In contrast, nitride semiconductor LEDs emit spontaneous radiation, with a single LED having an output power in the mW range; 2) Lasers operate at current densities reaching kA / cm². 2 The efficiency of LEDs is more than two orders of magnitude higher than that of nitride LEDs, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effect, and more severe electron-hole mismatch, leading to more severe efficiency degradation and the Droop effect; 3) LEDs emit spontaneous transition radiation without external influence, producing incoherent light from high energy levels to low energy levels, while lasers emit stimulated transition radiation, where the energy of the induced photon must be equal to the energy difference of the electron transition, producing coherent light between the photon and the induced photon; 4) The principles are different: LEDs emit radiative recombination light under the action of external voltage, where electrons and holes transition to quantum wells or pn junctions, while lasers require lasing conditions to be met, which must satisfy the inversion distribution of charge carriers in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light, satisfying the threshold condition so that the gain is greater than the loss, and finally outputting laser light.

[0003] Nitride semiconductor lasers have the following problems: 1) Large internal lattice mismatch and strain lead to strong polarization effects, and the strong Stark effect of quantum confinement in quantum wells limits the improvement of laser electro-lasing gain; 2) High internal defect density and imperfect crystal quality result in low capacitance, poor current spread, and low capacitance in the epitaxial structure, leading to ESD deviation in HBM human body mode; 3) The Mg acceptor activation energy of p-type semiconductors is large and the ionization efficiency is low. The hole concentration is much lower than the electron concentration and the hole mobility is much lower than the electron mobility, resulting in severe electron-hole asymmetry mismatch in the quantum well, leading to low electron leakage and hole injection efficiency. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor laser element with a high-capacitance intercalation layer. This semiconductor laser element incorporates a high-capacitance intercalation layer with ultra-high capacitance and ultra-high power density. The high-capacitance intercalation layer has a specific capacitance of 200-1000 F / g at a scan rate of 10 V / s, and the semiconductor laser element has a power density of 7-50 mW / cm². 2 The formation of a strong capacitance can improve the ESD throughput of the laser's HBM human body mode from over 95% at 1KV to over 95% at 2KV, and enhance hole mobility and hole injection efficiency, thereby improving the laser's quantum efficiency.

[0005] To achieve the above objectives, the present invention adopts the following technical solution: a semiconductor laser element with a high-capacitance insertion layer. The semiconductor laser element, structurally comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper confinement layer, wherein a first high-capacitance insertion layer is disposed between the lower confinement layer and the lower waveguide layer, and / or a second high-capacitance insertion layer is disposed between the upper waveguide layer and the electron blocking layer. The first high-capacitance insertion layer and the second high-capacitance insertion layer may be the same or different, and both are Nb2CT. x Ti3C2T x Mo2Ti2C3T x A specific structure is formed by any two or more combinations of In2Se3, AgInP2S6, MgIn2S4, and CdIn2S4, wherein the specific structure is any one or more combinations of heterojunction structure, superlattice structure, quantum well structure, core-shell structure, and quantum dot structure, and the first high-capacitance insertion layer (1071) and the second high-capacitance insertion layer (1072) have a specific capacitance of 200~1000 F / g at a scan rate of 10V / s, and the power density of the semiconductor laser element is 7-50 mW / cm². 2 .

[0006] Further improvements to semiconductor laser elements with high-capacitance intercalation layers:

[0007] Preferably, the thickness of the first high-capacitance insertion layer and the second high-capacitance insertion layer is 5-500 nm.

[0008] Preferably, the substrate is sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, or sapphire / SiN composite substrate. x Any one of the following composite substrates: magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2.

[0009] Preferably, the lower confining layer is any one or a combination of two or more of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm⁻¹. -3 ;

[0010] Alternatively, the lower and upper waveguide layers can be any one or a combination of two or more of GaN, InGaN, and AlInGaN, with a thickness of 50-1000 nm and a Si doping concentration of 1E16-5E19 cm⁻¹. -3 .

[0011] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, wherein the well layer is an InGaN well layer, and the barrier layer is any one or a combination of two or more of GaN, AlInGaN, AlGaN, and AlInN, and the number of periods of the active layer is m: 4 ≥ m ≥ 1.

[0012] Preferably, the electron blocking layer and the upper confinement layer are any one or a combination of two or more of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm⁻¹. -3 .

[0013] Preferably, the first high-capacitance insertion layer and the second high-capacitance insertion layer are specific structures formed by the following binary combination: Nb2CT x / Ti3C2T x Nb2CT x / Mo2Ti2C3T x Nb2CT x / In2Se3,Nb2CT x / AgInP2S6,Nb2CT x / MgIn2S4,Nb2CT x / CdIn2S4,Ti3C2T x / Mo2Ti2C3T x Ti3C2T x / In2Se3,Ti3C2T x / AgInP2S6,Ti3C2T x / MgIn2S4,Ti3C2T x / CdIn2S4,Mo2Ti2C3T x / In2Se3,Mo2Ti2C3T x / AgInP2S6,Mo2Ti2C3T x / MgIn2S4,Mo2Ti2C3T x / CdIn2S4, In2Se3 / AgInP2S6, In2Se3 / MgIn2S4, In2Se3 / CdIn2S4, AgInP2S6 / MgIn2S4, AgInP2S6 / CdIn2S4, MgIn2S4 / CdIn2S4.

[0014] Preferably, the first high-capacitance insertion layer and the second high-capacitance insertion layer are specific structures formed by the following ternary combination: Nb2CT x / Ti3C2T x / Mo2Ti2C3T x Nb2CT x / Ti3C2T x / In2Se3,Nb2CT x / Ti3C2T x / AgInP2S6,Nb2CT x / Ti3C2T x / MgIn2S4,Nb2CT x / Ti3C2T x / CdIn2S4,Nb2CT x / Mo2Ti2C3T x / In2Se3,Nb2CT x / Mo2Ti2C3T x / AgInP2S6,Nb2CT x / Mo2Ti2C3T x / MgIn2S4,Nb2CT x / Mo2Ti2C3T x / CdIn2S4,Nb2CT x / In2Se3 / AgInP2S6,Nb2CT x / In2Se3 / MgIn2S4,Nb2CT x / In2Se3 / CdIn2S4,Nb2CT x / AgInP2S6 / MgIn2S4,Nb2CT x / AgInP2S6 / CdIn2S4,Nb2CT x / MgIn2S4 / CdIn2S4,Ti3C2T x / Mo2Ti2C3T x / In2Se3,Ti3C2T x / Mo2Ti2C3T x / AgInP2S6,Ti3C2T x / Mo2Ti2C3T x / MgIn2S4、Ti3C2T x / Mo2Ti2C3T x / CdIn2S4、Ti3C2T x / In2Se3 / AgInP2S6,Ti3C2T x / In2Se3 / MgIn2S4,Ti3C2T x / In2Se3 / CdIn2S4,Ti3C2T x / AgInP2S6 / MgIn2S4,Ti3C2T x / AgInP2S6 / CdIn2S4,Ti3C2T x / MgIn2S4 / CdIn2S4,Mo2Ti2C3T x / In2Se3 / AgInP2S6,Mo2Ti2C3T x / In2Se3 / MgIn2S4,Mo2Ti2C3T x / In2Se3 / CdIn2S4,Mo2Ti2C3T x / AgInP2S6 / MgIn2S4,Mo2Ti2C3T x / AgInP2S6 / CdIn2S4,Mo2Ti2C3T x / MgIn2S4 / CdIn2S4, In2Se3 / AgInP2S6 / MgIn2S4, In2Se3 / AgInP2S6 / CdIn2S4, In2Se3 / MgIn2S4 / CdIn2S4, AgInP2S6 / MgIn2S4 / CdIn2S4.

[0015] Preferably, the first high-capacitance insertion layer and the second high-capacitance insertion layer are specific structures formed by the following quaternion combination: Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3,Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / AgInP2S6,Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / MgIn2S4,Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / CdIn2S4,Nb2CT x / Mo2Ti2C3T x / In2Se3 / AgInP2S6,Nb2CT x / Mo2Ti2C3T x / In2Se3 / MgIn2S4,Nb2CT x / Mo2Ti2C3T x / In2Se3 / CdIn2S4,Nb2CT x / In2Se3 / AgInP2S6 / MgIn2S4,Nb2CT x / In2Se3 / AgInP2S6 / CdIn2S4,Nb2CT x / AgInP2S6 / MgIn2S4 / CdIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6,Ti3C2T x / Mo2Ti2C3T x / In2Se3 / MgIn2S4,Ti3C2T x / Mo2Ti2C3T x / In2Se3 / CdIn2S4,Ti3C2T x / In2Se3 / AgInP2S6 / MgIn2S4, Ti3C2T x / In2Se3 / AgInP2S6 / CdIn2S4, Ti3C2T x / AgInP2S6 / MgIn2S4 / CdIn2S4, Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4, Mo2Ti2C3T x / In2Se3 / AgInP2S6 / CdIn2S4,Mo2Ti2C3T x / AgInP2S6 / MgIn2S4 / CdIn2S4, In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4.

[0016] Preferably, the first high-capacitance insertion layer and the second high-capacitance insertion layer are specific structures with the following pentagonal, hexagramal, or septagonal combinations: Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6,Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / MgIn2S4,Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / CdIn2S4,Nb2CT x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4,Nb2CT x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / CdIn2S4,Nb2CT x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / CdIn2S4, Ti3C2T x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4, Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4,Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / CdIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S 4。 Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4.

[0017] The advantages of this invention compared to the prior art are as follows:

[0018] This invention designs a semiconductor laser with a high-capacitance intercalation layer. A high-capacitance intercalation layer is disposed between the upper waveguide layer and the electron blocking layer and / or between the lower waveguide layer and the lower confinement layer, as is common in conventional laser elements. The high-capacitance intercalation layer exhibits a specific capacitance of 200-1000 F / g at a scan rate of 10 V / s, and the power density of this semiconductor laser element reaches 7-50 mW / cm².2 With its ultra-high capacitance and ultra-high power density, it can increase the slope efficiency of the laser by more than 40%, reduce the threshold current density by more than 25%, and increase the optical power by more than 25%. The strong capacitance can improve the ESD of the laser in HBM human body mode from more than 95% at 1KV to more than 95% at 2KV, and enhance the hole mobility and hole injection efficiency, thereby improving the quantum efficiency of the laser. Attached Figure Description

[0019] Figure 1 This is a schematic diagram of the structure of a semiconductor laser according to an embodiment of the present invention;

[0020] Reference numerals: 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, electron blocking layer; 106, upper confinement layer; 1071, first high-capacitance insertion layer; 1072, second high-capacitance insertion layer. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to the embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0022] Comparative Example 1

[0023] This embodiment provides a conventional laser element, which, from bottom to top, includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0024] The substrate 100 is a GaN substrate;

[0025] The lower confinement layer 101 is AlGaN with a thickness of 100 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0026] The lower waveguide layer 102 is GaN with a thickness of 100 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0027] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, the barrier layer is GaN, and the number of periods m is 3.

[0028] The upper waveguide layer 104 is InGaN with a thickness of 100 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0029] The electron blocking layer 105 is AlGaN, with a thickness of 100 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0030] The upper confinement layer 106 is AlInGaN with a thickness of 100 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0031] Example 1

[0032] This embodiment provides a semiconductor laser element 1 with a high-capacitance insertion layer, the structure of which is as follows: Figure 1 As shown, the specific structure is the same as that in Comparative Example 1, except that:

[0033] A first high-capacitance insertion layer 1071 is disposed between the lower confinement layer 101 and the lower waveguide layer. The first high-capacitance insertion layer 1071 is Ti3C2T. x A binary superlattice structure of MgIn2S4 with a thickness of 100 nm was tested, showing a specific capacitance of 250 F / g at a scan rate of 10 V / s. The power density of this semiconductor laser element was 10 mW / cm². 2 .

[0034] Example 2

[0035] This embodiment provides a semiconductor laser element 2 with a high-capacitance insertion layer, the structure of which is as follows: Figure 2 As shown, the specific structure is the same as that in Comparative Example 1, except that:

[0036] A second high-capacitance insertion layer 1072 is disposed between the upper waveguide layer 104 and the electron blocking layer 105. The second high-capacitance insertion layer 1072 is Ti3C2T. x A binary superlattice structure of MgIn2S4 with a thickness of 100 nm was tested, showing a specific capacitance of 275 F / g at a scan rate of 10 V / s. The power density of this semiconductor laser element was 15 mW / cm². 2 .

[0037] Example 3

[0038] This embodiment provides a semiconductor laser element 3 with a high-capacitance insertion layer, the structure of which is as follows: Figure 1 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a first high-capacitance insertion layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0039] The substrate 100 is a sapphire / AlN composite substrate;

[0040] The lower confinement layer 101 is a combination of GaN and AlGaN, with a thickness of 50 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0041] The first high-capacitance insertion layer 1071 is Nb2CT x A quantum well structure formed by the ternary combination of / In2Se3 / MgIn2S4, with a thickness of 50 nm, was tested to have a specific capacitance of 282 F / g at a scan rate of 10 V / s. The power density of this semiconductor laser element was 12 mW / cm². 2 ;

[0042] The lower waveguide layer 102 is InGaN with a thickness of 50 nm and a Si doping concentration of 1E16 cm⁻¹. -3 ;

[0043] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, the barrier layer is an AlInGaN, and the number of periods m is 4.

[0044] The upper waveguide layer 104 is made of AlInGaN, with a thickness of 50 nm and a Si doping concentration of 1E16 cm⁻¹. -3 ;

[0045] The electron blocking layer 105 is AlInGaN with a thickness of 20 nm and a Mg doping concentration of 1E18 cm⁻¹. -3 ;

[0046] The upper confinement layer 106 is a combination of AlGaN and InGaN, with a thickness of 50 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0047] Example 4

[0048] This embodiment provides a semiconductor laser element 3 with a high-capacitance insertion layer, the structure of which is as follows: Figure 1 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a first high-capacitance insertion layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0049] The substrate 100 is a GaN substrate;

[0050] The lower confinement layer 101 is a combination of InGaN and AlInGaN, with a thickness of 5000 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0051] The first high-capacitance insertion layer 1071 is Nb2CTx / Ti3C2T x / Mo2Ti2C3T x A quantum dot structure of CdIn2S4 quaternary combination, 100 nm thick, was tested to have a specific capacitance of 311 F / g at a scan rate of 10 V / s. The power density of this semiconductor laser element was 35 mW / cm². 2 ;

[0052] The lower waveguide layer 102 is made of AlInGaN, with a thickness of 1000 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0053] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of GaN and AlInGaN. The number of periods m is 1.

[0054] The upper waveguide layer 104 is a combination of GaN and InGaN, with a thickness of 1000 nm and a Si doping concentration of 1E19 cm⁻¹. -3 ;

[0055] The electron blocking layer 105 is a combination of AlInGaN and AlN, with a thickness of 1000 nm and a Mg doping concentration of 1E20 cm⁻¹. -3 ;

[0056] The upper confinement layer 106 is a combination of AlN and InN, with a thickness of 5000 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0057] Example 5

[0058] This embodiment provides a semiconductor laser element 4 with a high-capacitance insertion layer, the structure of which is as follows: Figure 3 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a first high-capacitance insertion layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, a second high-capacitance insertion layer 1072, and an upper confinement layer 106; specifically:

[0059] The substrate 100 is a sapphire / SiO2 composite substrate;

[0060] The lower confinement layer 101 is a combination of GaN, AlGaN, and InGaN, with a thickness of 1000 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0061] The first high-capacitance insertion layer 1071 and the second high-capacitance insertion layer 1072 are the same, both being Ti3C2T. x / Mo2Ti2C3Tx A binary heterojunction structure with a thickness of 300 nm was tested and found to have a specific capacitance of 295 F / g at a scan rate of 10 V / s. The power density of this semiconductor laser element is 40 mW / cm². 2 ;

[0062] The lower waveguide layer 102 is a combination of GaN, InGaN, and AlInGaN, with a thickness of 500 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0063] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of GaN and AlInN. The number of periods m is 2.

[0064] The upper waveguide layer 104 is GaN with a thickness of 500 nm and a Si doping concentration of 1E17 cm⁻¹. -3 ;

[0065] The electron blocking layer 105 is a combination of AlN and AlInN, with a thickness of 500 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 ;

[0066] The upper confinement layer 106 is a combination of AlN, InN, and AlInN, with a thickness of 1000 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0067] Example 6

[0068] This embodiment provides a semiconductor laser element 5 with a high-capacitance insertion layer, the structure of which is as follows: Figure 3 As shown, the structure, from bottom to top, includes a substrate 100, a lower confinement layer 101, a first high-capacitance insertion layer 1071, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, a second high-capacitance insertion layer 1072, an electron blocking layer 105, and an upper confinement layer 106; specifically:

[0069] The substrate 100 is a GaN substrate;

[0070] The lower confinement layer 101 is a combination of InGaN, AlInGaN, and AlN, with a thickness of 500 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0071] The first high-capacitance insertion layer 1071 is Nb2CT x / Ti3C2T x / Mo2Ti2C3T xA pentagonal core-shell and quantum dot structure of / In2Se3 / AgInP2S6, with a thickness of 100 nm, was tested to have a specific capacitance of 375 F / g at a scan rate of 10 V / s. The power density of this semiconductor laser element was 23 mW / cm². 2 ;

[0072] The lower waveguide layer 102 is a combination of GaN and AlInGaN, with a thickness of 700 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0073] The active layer 103 is a periodic structure composed of a well layer and a barrier layer. The well layer is an InGaN well layer, and the barrier layer is a combination of GaN, AlGaN, and AlInN. The number of periods m is 3.

[0074] The upper waveguide layer 104 is a combination of GaN and AlInGaN, with a thickness of 700 nm and a Si doping concentration of 1E18 cm⁻¹. -3 ;

[0075] The second high-capacitance insertion layer 1072 is Ti3C2T x / Mo2Ti2C3T x A hexa-element superlattice structure of / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4, with a thickness of 100 nm, was tested to have a specific capacitance of 560 F / g at a scan rate of 10 V / s. The power density of this semiconductor laser element is 40 mW / cm². 2 ;

[0076] The electron blocking layer 105 is a combination of AlInGaN, AlN, and AlInN, with a thickness of 600 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 ;

[0077] The upper confinement layer 106 is a combination of InGaN, AlN, and AlInN, with a thickness of 500 nm and a Mg doping concentration of 1E19 cm⁻¹. -3 .

[0078] The performance of the semiconductor laser elements in the comparative examples above, and the semiconductor laser elements with high-capacitance insertion layers in Examples 1-6, were tested, and the results are shown in Table 1 below:

[0079] Table 1 Performance test data of semiconductor laser elements in comparative examples and Examples 1-6

[0080]

[0081] As shown in Table 1 above, compared with traditional laser elements, the semiconductor laser element of the present invention has a high-capacitance insertion layer, which forms a strong capacitance, increasing the slope efficiency of the laser by more than 40%, reducing the threshold current density by more than 25%, and increasing the optical power by more than 25%. It also improves the HBM human body mode ESD of the laser from more than 95% at 1KV to more than 95% at 2KV, and enhances the hole mobility and hole injection efficiency, thereby improving the quantum efficiency of the laser.

[0082] Those skilled in the art should understand that the above descriptions are merely several specific embodiments of the present invention, and not all embodiments. It should be noted that many modifications and improvements can be made by those skilled in the art, and all modifications or improvements not exceeding the scope of the claims should be considered within the protection scope of the present invention.

Claims

1. A semiconductor laser device with a high-capacitance interlayer, which is structurally composed of, in order from the bottom, a substrate (100), a lower confinement layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron-blocking layer (105), and an upper confinement layer (106), characterized in that: The first high-capacitance insertion layer (1071) and the second high-capacitance insertion layer (1072) are the same or different, and are Nb2C x , Ti3C2T x , Mo2Ti2C3T x , In2Se3, AgInP2S6, MgIn2S4, CdIn2S4, and a specific structure formed by two or more combinations of the above, the specific structure being any one of a heterojunction structure, a superlattice structure, a quantum well structure, a core-shell structure, a quantum dot structure, or a combination of two or more thereof, the first high-capacitance insertion layer (1071) and the second high-capacitance insertion layer (1072) having a mass specific capacitance of 200 ~ 1000 F / g at a scan rate of 10 V / s, and the semiconductor laser element having a power density of 7-50 mW / cm 2 .

2. A semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The thickness of the first high-capacitance interlayer (1071) and the second high-capacitance interlayer (1072) is 5-500 nm.

3. The semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The substrate (100) is any one of sapphire, silicon, Ge, SiC, AIN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AIN composite substrate, sapphire / SiN x , magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

4. The semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The lower confining layer (101) is any one of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN or a combination of two or more thereof, with a thickness of 50-5000 nm and a Si doping concentration of 1E18-1E20 cm -3 ; Or, the lower waveguide layer (102) and the upper waveguide layer (104) are any one or more than two combinations of GaN, InGaN, AlInGaN, the thickness is 50-1000nm, and the Si doping concentration is 1E16-5E19 cm -3 .

5. The semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The active layer (103) is a periodic structure composed of a well layer and a barrier layer, the well layer is an InGaN well layer, the barrier layer is any one of GaN, AlInGaN, AlGaN, AlInN or a combination of two or more thereof, and the number of periods of the active layer (103) is m: 4≥m≥1.

6. The semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The electron blocking layer (105) and the upper confining layer (106) are any one of GaN, AlGaN, InN, AlInGaN, AlN, AlInN or a combination of two or more thereof, with a thickness of 20-1000 nm and a Mg doping concentration of 1E18-1E20 cm -3 .

7. The semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The first high-capacitance interlayer (1071) and the second high-capacitance interlayer (1072) are specific structures formed by the following binary combinations: Nb2CT x / Ti3C2T x , Nb2CT x / Mo2Ti2C3T x , Nb2CT x / In2Se3, Nb2CT x / AgInP2S6, Nb2CT x / MgIn2S4, Nb2CT x / CdIn2S4, Ti3C2T x / Mo2Ti2C3T x , Ti3C2T x / In2Se3, Ti3C2T x / AgInP2S6, Ti3C2T x / MgIn2S4, Ti3C2T x / CdIn2S4, Mo2Ti2C3T x / In2Se3, Mo2Ti2C3T x / AgInP2S6, Mo2Ti2C3T x / MgIn2S4, Mo2Ti2C3T x / CdIn2S4, In2Se3 / AgInP2S6, In2Se3 / MgIn2S4, In2Se3 / CdIn2S4, AgInP2S6 / MgIn2S4, AgInP2S6 / CdIn2S4, MgIn2S4 / CdIn2S4.

8. The semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The first high-capacitance interlayer (1071) and the second high-capacitance interlayer (1072) are specific structures formed by the following three-element combinations: Nb2CT x / Ti3C2T x / Mo2Ti2C3T x , Nb2CT x / Ti3C2T x / In2Se3, Nb2CT x / Ti3C2T x / AgInP2S6, Nb2CT x / Ti3C2T x / MgIn2S4, Nb2CT x / Ti3C2T x / CdIn2S4, Nb2CT x / Mo2Ti2C3T x / In2Se3, Nb2CT x / Mo2Ti2C3T x / AgInP2S6, Nb2CT x / Mo2Ti2C3T x / MgIn2S4, Nb2CT x / Mo2Ti2C3T x / CdIn2S4, Nb2CT x / In2Se3 / AgInP2S6, Nb2CT x / In2Se3 / MgIn2S4, Nb2CT x / In2Se3 / CdIn2S4, Nb2CT x / AgInP2S6 / MgIn2S4, Nb2CT x / AgInP2S6 / CdIn2S4, Nb2CT x / MgIn2S4 / CdIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3, Ti3C2T x / Mo2Ti2C3T x / AgInP2S6, Ti3C2T x / Mo2Ti2C3T x / MgIn2S4, Ti3C2T x / Mo2Ti2C3T x / CdIn2S4, Ti3C2T x / In2Se3 / AgInP2S6, Ti3C2T x / In2Se3 / MgIn2S4, Ti3C2T x / In2Se3 / CdIn2S4, Ti3C2T x / AgInP2S6 / MgIn2S4, Ti3C2T x / AgInP2S6 / CdIn2S4, Ti3C2T x / MgIn2S4 / CdIn2S4, Mo2Ti2C3T x / In2Se3 / AgInP2S6, Mo2Ti2C3T x / In2Se3 / MgIn2S4, Mo2Ti2C3T x / In2Se3 / CdIn2S4, Mo2Ti2C3T x / AgInP2S6 / MgIn2S4, Mo2Ti2C3T x / AgInP2S6 / CdIn2S4, Mo2Ti2C3T x / MgIn2S4 / CdIn2S4, In2Se3 / AgInP2S6 / MgIn2S4, In2Se3 / AgInP2S6 / CdIn2S4, In2Se3 / MgIn2S4 / CdIn2S4, AgInP2S6 / MgIn2S4 / CdIn2S4.

9. The semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The first high-capacitance interlayer (1071) and the second high-capacitance interlayer (1072) are specific structures formed by the following four combinations: Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / AgInP2S6, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / MgIn2S4, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / CdIn2S4, Nb2CT x / Mo2Ti2C3T x / In2Se3 / AgInP2S6, Nb2CT x / Mo2Ti2C3T x / In2Se3 / MgIn2S4, Nb2CT x / Mo2Ti2C3T x / In2Se3 / CdIn2S4, Nb2CT x / In2Se3 / AgInP2S6 / MgIn2S4, Nb2CT x / In2Se3 / AgInP2S6 / CdIn2S4, Nb2CT x / AgInP2S6 / MgIn2S4 / CdIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / MgIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / CdIn2S4, Ti3C2T x / In2Se3 / AgInP2S6 / MgIn2S4, Ti3C2T x / In2Se3 / AgInP2S6 / CdIn2S4, Ti3C2T x / AgInP2S6 / MgIn2S4 / CdIn2S4, Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4, Mo2Ti2C3T x In2Se3 / AgInP2S6 / CdIn2S4, Mo2Ti2C3T x AgInP2S6 / MgIn2S4 / CdIn2S4, In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4.

10. The semiconductor laser device having a high-capacitance interlayer according to claim 1, wherein The first high-capacitance insertion layer (1071) and the second high-capacitance insertion layer (1072) are specific structures of the following five-element combination or six-element combination or seven-element combination: Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / MgIn2S4, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / CdIn2S4, Nb2CT x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4, Nb2CT x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / CdIn2S4, Nb2CT x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / CdIn2S4, Ti3C2T x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4, Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / CdIn2S4, Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4, Nb2CT x / Ti3C2T x / Mo2Ti2C3T x / In2Se3 / AgInP2S6 / MgIn2S4 / CdIn2S4.

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