Semiconductor device

Abstract

The object of the present application is to achieve good resistance at the time of recovery operation of a diode in a semiconductor device in which a transistor region and a diode region are provided together on one semiconductor substrate. A semiconductor substrate (30) has an n-type drift layer (3) in an IGBT region (1) and a diode region (2), and in the IGBT region (1) has a p-type base layer (4) formed on the n-type drift layer (3), a p+ type diffusion layer (5) and an n+ type emitter layer (6) selectively formed on the p-type base layer (4) and having a higher p-type impurity concentration than the p-type base layer (4), and a gate electrode (9) opposed to the p-type base layer (4) through a gate insulating film (8), and in the diode region (2) has a p-type anode layer (19) formed on the n-type drift layer (3). The p+ type diffusion layer (5) has a higher p-type impurity concentration than the p-type anode layer (19), the p+ type diffusion layer (5) becomes shallower and the p-type impurity concentration becomes smaller as it approaches the diode region (2).

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