Electronic device
By employing a combination structure of blue light emitting unit, reflective layer, light color conversion unit and microstructure array optical film in the backlight module, the problems of high cost, insufficient brightness and power consumption of direct-lit backlight modules are solved, achieving higher light efficiency and visual effect.
Patent Information
- Application Number
- CN202310844167.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-05-25
- Publication Date
- 2026-02-24
- Estimated Expiration
- 2040-05-25
AI Technical Summary
Existing direct-lit backlight modules using LEDs as the light source suffer from high manufacturing costs, insufficient brightness, hot spots leading to poor visual effects, and power consumption issues.
It adopts a combined structure of blue light-emitting unit, reflective layer, light color conversion unit and microstructure array optical film. By optimizing the spacing and optical distance of light-emitting diodes, the number of light-emitting diodes is reduced. Combined with light recovery layer and brightness enhancement film, light efficiency is improved and power consumption is reduced.
This achieves reduced LED density, lower manufacturing costs, improved light efficiency and visual effects, reduced power consumption, and improved light utilization and brightness uniformity of the backlight module.
Smart Images

Figure CN116741037B_ABST
Abstract
Description
[0001] This application is a divisional application, the parent application's application number is 202010451969.6, the application date is May 25, 2020, and the name is: electronic device. TECHNICAL FIELD
[0002] The present application relates to an electronic device, in particular to an electronic device with a special structure backlight module. BACKGROUND
[0003] In a display device, a direct type backlight module using light emitting diodes as light sources, combined with local dimming technology, can achieve the effect of high dynamic range (HDR). However, whether this technology can replace the existing technology depends on its manufacturing cost.
[0004] When reducing the number of light emitting diodes used, the manufacturing cost can be reduced, but the problem of insufficient brightness is caused. In addition, when using light emitting diodes as light sources, the hot spot of the light emitting diode will cause poor visual effect, and will cause the problem of power consumption loss.
[0005] Therefore, there is an urgent need to develop a display device with a novel backlight module to achieve the purpose of reducing the setting density of the light source (i.e. light emitting diode) of the backlight module, reducing the manufacturing cost, improving the light efficiency, reducing the power consumption or improving the visual effect. SUMMARY
[0006] The present application provides an electronic device, comprising: a substrate; a plurality of light emitting units comprising a light emitting layer and disposed on the substrate, and the light emitting units are blue light emitting units; a reflective layer disposed on the substrate and located between two adjacent light emitting units of the light emitting units; and a light color conversion unit disposed on the light emitting units; wherein the distance between the surface of the reflective layer and the light color conversion unit has a distance, the distance between the two adjacent light emitting units of the light emitting units has a pitch, and the ratio of the distance to the pitch is greater than 0.09 and less than 0.38.
[0007] The other novel features of the present application will be more obvious by combining the drawings and being described in detail below. BRIEF DESCRIPTION OF DRAWINGS
[0008] Figure 1 The cross-sectional schematic diagram of the backlight module of the electronic device of an embodiment of the present application;
[0009] Figure 2 The cross-sectional schematic diagram of the backlight module of the electronic device of another embodiment of the present application;
[0010] Figure 3A The three-dimensional schematic diagram of the microstructure array optical film of an embodiment of the present application;
[0011] Figure 3B FIG. 1 is a cross-sectional view schematically illustrating a backlight module according to an embodiment of the present disclosure; Figure 3A
[0012] Figure 4A FIG. 2 is a perspective view schematically illustrating a microstructure array optical film according to another embodiment of the present disclosure;
[0013] Figure 4B Figure 4A FIG. 3 is a cross-sectional view schematically illustrating a microstructure array optical film according to another embodiment of the present disclosure;
[0014] Figure 5 FIG. 4 is a cross-sectional view schematically illustrating a backlight module of an electronic device according to another embodiment of the present disclosure;
[0015] Figure 6 FIG. 5 is a cross-sectional view schematically illustrating a backlight module of an electronic device according to another embodiment of the present disclosure;
[0016] Figure 7 FIG. 6 is a cross-sectional view schematically illustrating a backlight module of an electronic device according to another embodiment of the present disclosure.
[0017] Explanation of Symbols:
[0018] 10 backlight module
[0019] 11 substrate
[0020] 12 reflective layer
[0021] 121 hole
[0022] 122 surface
[0023] 13 light emitting diode
[0024] 131 upper light emitting surface
[0025] 14 protective layer
[0026] 21 first brightness enhancement film
[0027] 22 diffusion film
[0028] 23 second brightness enhancement film
[0029] 24 light color conversion unit
[0030] 241 upper surface
[0031] 25 light recycling layer
[0032] 27 microstructure array optical film
[0033] 271 upper surface
[0034] 272 lower surface
[0035] 273 polygonal recess
[0036] 274 columnar protrusion
[0037] 275 recessed portion
[0038] 276 reflection unit
[0039] 3 frame
[0040] D A , D B depth
[0041] W A , W B width
[0042] OD distance
[0043] P pitch DETAILED DESCRIPTION
[0044] Different embodiments of the present application are provided below. These embodiments are used to explain the technical contents of the present application, and are not used to limit the scope of the rights of the present application. A feature of one embodiment can be applied to other embodiments by suitable modification, substitution, combination, separation, i.e., features of different embodiments can be mixed and used as long as they do not violate the spirit of the present application.
[0045] It should be noted that, in this document, unless specifically indicated otherwise, having "one" element is not limited to having a single element, but can have one or more elements.
[0046] In addition, in this document, unless specifically indicated otherwise, the ordinal numbers "first", "second", etc. are only used to distinguish multiple elements with the same name, and do not indicate a hierarchy, a level, an execution order, or a process order between them. A "first" element and a "second" element can appear together in the same component, or separately in different components. The presence of an element with a larger ordinal number does not necessarily indicate the presence of another element with a smaller ordinal number.
[0047] In this document, unless specifically indicated otherwise, the so-called feature A "or" or "and / or" feature B means that A exists alone, B exists alone, or A and B exist simultaneously; the so-called feature A "and" or "with" or "and" feature B means that A and B exist simultaneously; the so-called "including", "containing", "having", "containing" means including but not limited to.
[0048] In addition, in this document, the so-called "upper", "lower", or "between" and other terms are only used to describe the relative positions between multiple elements, and in interpretation can be extended to include the case of turning over.
[0049] Furthermore, herein, unless otherwise indicated, references in the specification and claims to positions, such as "over", "above", or "upward", can refer to directly contacting another element or can refer to not directly contacting another element. Also, unless otherwise indicated, references in the specification and claims to positions, such as "under", "below", or "downward", can refer to directly contacting another element or can refer to not directly contacting another element. If an element is referred to as being "on" another element, it can be directly on the other element or intervening elements can also be present, unless otherwise indicated. In addition, unless otherwise indicated, the terms "connected" and "coupled" are used broadly and encompass both direct and indirect connections and couplings.
[0050] Furthermore, the terms "connected" and "coupled" are used broadly and encompass both direct and indirect connections, as well as electrical, mechanical or logical connections.
[0051] In addition, the term "adjacent" is used herein to describe proximity, and does not necessarily imply contact.
[0052] In addition, if a numerical value is between a first value and a second value, the value can be the first value, the second value, or another value between the first value and the second value.
[0053] In addition, the term "about" is used herein, as is conventional, to describe a quantity that is nearly the same as a given value or range, such as within 20%, or within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5%. A quantity described as being "about" a given value or range is also implicitly described as being "approximately" the given value or range, unless otherwise indicated.
[0054] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be apparent to those skilled in the art that the terms, e.g., those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
[0055] In addition, the electronic device disclosed in the present application can include a display device, a light emitting device, a touch display device, a curved display device, or a free shape display device, but is not limited thereto. The electronic device can be a foldable or flexible electronic device. The display layer of the electronic display device can include, for example, liquid crystal, quantum dots (QD), fluorescence, phosphor, other suitable display medium, or a combination thereof, but is not limited thereto. In the present application, the light emitting diode can include, for example, a light emitting diode (LED), a mini LED, a micro LED, or a quantum dot light emitting diode (which can be, for example, a QLED, a QDLED), or other suitable material or any arrangement combination of the above, but is not limited thereto. The display device can include, for example, a tiled display device, but is not limited thereto. It should be noted that the electronic device can be any arrangement combination of the above, but is not limited thereto. In addition, the shape of the electronic device can be rectangular, circular, polygonal, a shape with curved edges, or other suitable shape. The electronic device can have a driving system, a control system, a light source system, a shelf system, or other peripheral system to support the display device or the tiled display device.
[0056] Figure 1 A cross-sectional view of a backlight module of an electronic device according to an embodiment of the present application.
[0057] The electronic device of the present application includes a backlight module 10, which is a direct backlight module. The backlight module 10 includes a substrate 11, a plurality of light emitting diodes 13 disposed on the substrate 11, wherein the light emitting diodes 13 are blue light emitting diodes, a protective layer 14 disposed on the substrate 11 and covering the light emitting diodes 13, and a light color conversion unit 24 disposed on the light emitting diodes 13.
[0058] In addition, the backlight module 10 of the present embodiment can further include a reflective layer 12 disposed on the substrate 11 and located between two adjacent light emitting diodes 13. The reflective layer 12 can be formed on the entire surface of the substrate 11, and then patterned to form a plurality of holes 121, and the light emitting diodes 13 are disposed in the holes 121. In the present embodiment, each light emitting diode 13 corresponds to a hole 121; however, the present application is not limited thereto. In other embodiments of the present application, one or more light emitting diodes 13 can be disposed in a hole 121.
[0059] The substrate 11 can be a general substrate or a substrate including active elements. The general substrate can include a flexible substrate or a non-flexible substrate, and the material thereof can include, for example, glass, quartz, a wafer, sapphire, polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethyleneterephthalate (PET), other suitable materials, or a combination thereof. In addition, a circuit electrically connected to the light emitting diode 13 can be formed on the general substrate to drive the light emitting diode 13. The substrate including active elements can be a substrate in which active elements are provided on the aforementioned general substrate, and the active elements can drive the light emitting diode 13. Examples of the active elements can include a transistor.
[0060] The reflective layer 12 can include a material having reflectivity, such as white ink or metal (e.g., silver, aluminum, gold, chromium, or an alloy thereof).
[0061] The light emitting diode 13 can be a bare chip light emitting diode or a packaged light emitting diode. The bare chip light emitting diode is a light emitting diode chip including electrodes (e.g., p-type and n-type electrodes), a semiconductor layer, and a light emitting layer without a packaging layer. The packaged light emitting diode is a light emitting diode chip including electrodes (e.g., p-type and n-type electrodes), a semiconductor layer, and a light emitting layer with a packaging layer. The light emitting diode 13 can be a blue light emitting diode. Here, the light emitting layer can include phosphor, quantum dots, or a combination thereof. In the present embodiment, the light emitting diode 13 is, for example, a bare chip light emitting diode.
[0062] In addition, the light emitting diode 13 can be a multi-faceted light emitting diode. In the present embodiment, the light emitting diode chip can emit light toward the surface of the substrate 11, and in other words, the light emitting diode chip can emit light toward the surface of the protective layer 14 and the side surface. In the present embodiment, the light emitting diode 13 is a five-faceted light emitting diode.
[0063] Further, the light emitting diode 13 can be a flip chip light emitting diode having electrodes to be electrically connected to a circuit or active elements on the substrate 11.
[0064] The protective layer 14 can cover the light emitting diode 13. In the present embodiment, the protective layer 14 directly contacts the light emitting diode 13 to protect the light emitting diode 13. In addition, the protective layer 14 can also provide at least a portion of an optical distance. The so-called optical distance will be described later. Here, the material of the protective layer 14 can include an optical glue, a silicone glue, a translucent glue, or a combination thereof, and diffusion particles can be selectively added in the material. In addition, the refractive index (n) of the protective layer 14 can be between 1.4 and 1.6 (1.4≤n≤1.6).
[0065] The backlight module 10 of the present embodiment can further include a first brightness enhancement film 21, a diffusion film 22, and a second brightness enhancement film 23 disposed on the light color conversion unit 24, wherein the diffusion film 22 is located between the first brightness enhancement film 21 and the second brightness enhancement film 23. Here, the first brightness enhancement film 21 and the second brightness enhancement film 23 are respectively a prism optical film for improving the brightness of the backlight module, and the diffusion film 22 can make the light source of the backlight module uniformly distributed.
[0066] The light color conversion unit 24 is a unit that can convert blue light into white light. In the present embodiment, the light color conversion unit 24 can be, for example, a light color conversion film, which can include fluorescent powder, quantum dots, dyes, or a combination thereof.
[0067] The backlight module 10 of the present embodiment can further include a light recycling layer 25, wherein the light recycling layer 25 is disposed on the protective layer 14, and the light color conversion unit 24 is disposed on the light recycling layer 25. The light recycling layer 25 is a multilayer film formed by interleaving and stacking thin films with different refractive indices. Here, the light transmittance (T1) of the light recycling layer 25 between 420 nm and 480 nm can be greater than 75% (T1>75), and the light transmittance (T2) of the light recycling layer 25 between 550 nm and 750 nm can be less than 10% (T2<10%). In another embodiment of the present application, the average light transmittance (T1) of the light recycling layer 25 between 420 nm and 480 nm can be greater than 85% (T1>85%), and the average light transmittance (T2) of the light recycling layer 25 between 550 nm and 750 nm can be less than 3% (T2<3%).
[0068] In a backlight module without the light recycling layer 25, when the blue light emitted by the light emitting diode 13 is converted into white light by the light color conversion unit 24, the generated red light and green light will be scattered or reflected, thereby reducing the white light conversion efficiency and reducing the utilization rate of light.
[0069] In the backlight module of the present embodiment, the light recycling layer 25 has a high transmittance in the wavelength range of 420 nm to 480 nm, so the blue light emitted by the light emitting diode 13 in the wavelength range of 420 nm to 480 nm can pass through the light recycling layer 25 and then pass through the light color conversion unit 24. Even if part of the blue light is reflected by the first brightness enhancement film 21, the diffusion film 22, or the second brightness enhancement film 23, the reflected blue light can be reflected again by the reflective layer 12 of the substrate 11 and then pass through the film layers above the reflective layer 12. In addition, the light recycling layer 25 has a low transmittance in the wavelength range of 550 nm to 750 nm, so most of the red light and green light emitted by the light color conversion unit 24 toward the light recycling layer 25 is reflected by the light recycling layer 25 and then passes through the film layers above the light recycling layer 25. Therefore, the light recycling layer 25 can reduce the scattering of light to improve the utilization rate of the light emitted by the light emitting diode 13, so that the light emitting efficiency can be improved by about 50% or more.
[0070] In addition, in the backlight module 10 of the present embodiment, the reflective layer 12 has a distance OD between the surface 122 and the light color conversion unit 24; more specifically, the reflective layer 12 has a distance OD between the upper surface 122 and the upper surface 241 of the light color conversion unit 24. The distance OD is the optical distance. In addition, the two adjacent light emitting diodes 13 have a pitch P; more specifically, the two adjacent light emitting diodes 13 have a pitch P between the center points of the two adjacent light emitting diodes 13. The ratio of the distance OD to the pitch P is greater than 0.09 and less than 0.38 (0.09 < OD / P < 0.38). In another embodiment of the present application, the ratio of the distance OD to the pitch P can be greater than 0.17 and less than 0.38 (0.17 < OD / P < 0.38). In another embodiment of the present application, the ratio of the distance OD to the pitch P can be greater than 0.09 and less than 0.17 (0.09 < OD / P < 0.17). The smaller the ratio of the distance OD to the pitch P, the thinner the overall thickness of the backlight module 10 or the fewer the number of light emitting diodes 13 used.
[0071] Furthermore, the backlight module 10 of the present embodiment is arranged in a frame 3 and emits light upward (as indicated by the arrows). Although not shown in the figure, the electronic device of the present embodiment can further include a display panel arranged above the backlight module 10, and the light emitted by the backlight module 10 (as indicated by the arrows) can pass through the display panel to achieve the display function of the electronic device.
[0072] Figure 2 A cross-sectional view of a backlight module of an electronic device according to another embodiment of the present application. Figure 2 With Figure 1 The same or similar elements will use the same or similar reference numerals, and the detailed description thereof will be omitted. Figure 2 The backlight module of the present application and Figure 1Similarities, except for the following differences.
[0073] Figure 2 The backlight module 10 does not include Figure 1 The light recycling layer 25. Furthermore... Figure 2 No diffusion film 22 is provided between the first brightness enhancement film 21 and the second brightness enhancement film 23 (e.g. Figure 1 As shown), a microstructure array optical film 27 is provided.
[0074] like Figure 2 As shown, the backlight module 10 of this embodiment also includes a microstructure array optical film 27, which is disposed on the protective layer 14, and the microstructure array optical film 27 is disposed between the first brightness enhancement film 21 and the second brightness enhancement film 23. Several structures of the microstructure array optical film 27 will be described below.
[0075] Figure 3A This is a three-dimensional schematic diagram of a microstructure array optical film according to an embodiment of the present invention. Figure 3B for Figure 3A A cross-sectional schematic diagram of a microstructured array optical film. (See diagram below.) Figure 2 and Figure 3A As shown, the microstructure array optical film 27 of this embodiment has an upper surface 271 and a lower surface 272, with the upper surface 271 facing the lower surface 272 and the lower surface 272 facing the protective layer 14. The upper surface 271 is provided with a plurality of polyhedral grooves 273, which are arranged in an array. More specifically, the array arrangement is a regular repetition of two-dimensional or three-dimensional structures along a specific direction. For example, in... Figure 3A In the middle, the polyhedral grooves 273 are arranged in a repeating pattern along the X and Y directions. Figure 3A In the example, polyhedral groove 273 is a regular tetrahedral groove, which can also be called an inverted pyramid-shaped groove. For example... Figure 3A and Figure 3B As shown, the width W of the polyhedral groove 273 A They can be between 50μm and 180μm (50μm≤W) A ≤180μm), while the depth D of the polyhedral groove 273 A They can be between 10μm and 50μm (10μm≤D) A ≤50μm). More specifically, the width W of the polyhedral groove 273 A It can be the maximum width, and the depth D of the polyhedral groove 273. A It can be the maximum depth, or it can be defined as the distance between the height of the upper surface 271 of the microstructure array optical film 27 and the height of the end point 273a of the polyhedral groove. In addition, in this embodiment, the lower surface 272 is a plane.
[0076] Figure 4AThis is a three-dimensional schematic diagram of a microstructure array optical film according to an embodiment of the present invention. Figure 4B for Figure 4A A cross-sectional schematic diagram of a microstructure array optical film. Figure 4A and Figure 4B The microstructure array optical film shown is Figure 3A and Figure 3B The microstructure array shown is similar to the optical film, except for the lower surface 272; therefore Figure 4A and Figure 4B The structure of the upper surface 271 of the microstructure array optical film shown will not be described again.
[0077] like Figure 4B As shown, the lower surface 272 of the microstructure array optical film in this embodiment is provided with a plurality of columnar protrusions 274, and the columnar protrusions 274 are arranged in an alternating manner. More specifically, the columnar protrusions 274 extend in two different directions and intersect with each other, and a recess 275 is formed between adjacent columnar protrusions 274, and the plurality of recesses 275 are also arranged in an array. Figure 4A and Figure 4B As shown, the width W of the columnar protrusion 274 B It can be between 35μm and 115μm (35μm≤W) B ≤115μm), more specifically, width W B It can be the maximum width of the columnar protrusion 247, or it can be defined as the distance between the endpoints 275a of two adjacent recesses, while the depth D of the recess 275 B It can be between 1μm and 30μm (1μm≤DB≤30μm), more specifically, depth D B It can be the maximum depth of the recess 275, or it can be defined as the distance between the height of the end point 275a of the recess and the height of the apex 274a of the columnar protrusion.
[0078] Furthermore, although not shown in the figure, another microstructure array optical film suitable for the present invention may have such a structure on both the upper surface 271 and the lower surface 272. Figure 3A and Figure 3B The diagram shows multiple polyhedral grooves 273. When the lower surface 272 also has polyhedral grooves, the structural features of the polyhedral grooves on the lower surface 272 are similar to those shown. Figure 3A and Figure 3B The polyhedral groove 273 on the upper surface 271 shown has similar structural features, so it will not be described again here.
[0079] In backlight modules without a microstructure array optical film 27, to achieve the desired visual effect, it is often necessary to reduce the spacing between the light-emitting diodes 13, which requires a larger number of light-emitting diodes 13, thus increasing the cost of the backlight module. Alternatively, a prism optical film can be added, but this would reduce the brightness of the backlight module.
[0080] like Figure 2 As shown, when the backlight module 10 includes a microstructure array optical film 27 with the aforementioned structure, the backlight uniformity of the backlight module 10 can be improved through these microstructures. Furthermore, by providing the microstructure array optical film 27, the density of light-emitting diodes 13 per unit area can be reduced. Therefore, the spacing P between two adjacent light-emitting diodes 13 is larger, resulting in fewer light-emitting diodes 13 used, thereby reducing the ratio (OD / P) of the distance OD between the surface 122 of the reflective layer 12 and the light color conversion unit 24 to the spacing P between two adjacent light-emitting diodes 13. Simultaneously, because fewer light-emitting diodes 13 are used, the manufacturing cost of the backlight module can be further reduced.
[0081] Figure 5 This is a cross-sectional schematic diagram of the backlight module of an electronic device according to another embodiment of the present invention. Figure 5 and Figure 1 and Figure 2 Identical or similar components will be labeled with the same or similar designations, and their descriptions will be omitted. Figure 5 The backlight module and Figure 2 Similarities, except for the following differences.
[0082] Figure 5 The backlight module 10 does not include Figure 2 The second brightening film 23. Due to... Figure 5 The backlight module 10 retains the brightness enhancement film 21 but lacks another brightness enhancement film, which reduces the thickness of the backlight module 10 and effectively improves the optical brightness of the backlight module 10 compared to a backlight module without a brightness enhancement film.
[0083] Figure 6 This is a cross-sectional schematic diagram of the backlight module of an electronic device according to another embodiment of the present invention. Figure 6 and Figure 1 and Figure 2 Identical or similar components will be labeled with the same or similar designations, and their descriptions will be omitted. Figure 6 The backlight module and Figure 5 Similarities, except for the following differences.
[0084] Figure 6 The backlight module 10 retains the brightness enhancement film 21 but lacks another brightness enhancement film. It also includes a light recovery layer 25, which is disposed on the protective layer 14, and the light color conversion unit 24 is disposed on the light recovery layer 25. Here, the structure and features of the light recovery layer 25 are as described above, and will not be repeated.
[0085] exist Figure 6The backlight module 10 is provided with a light recovery layer 25 and a microstructure array optical film 27. Therefore, in addition to reducing light scattering to improve light utilization, it can also improve the backlight uniformity of the backlight module 10, and has the effect of reducing the setting density of light-emitting diodes 13 and reducing power consumption.
[0086] In particular, compared to previous backlight modules, Figure 6 The number of light-emitting diodes 13 required for the backlight module 10 can be reduced to about 40%, the light utilization rate of the backlight module 10 can be increased to about 180%, and the power consumption of the backlight module 10 can be reduced to about 50%. Taking a 6-inch backlight module as an example, in order to achieve a module brightness of 500 nits, it is generally required to have about 4,500-5,000 LEDs, while the module architecture of the present invention can reduce the number of LEDs to about 1,800-2,000 LEDs; under a driving condition of 2.6W, the brightness of the existing module architecture is about 500 nits, while the brightness of the module architecture of the present invention can be increased to 900 nits. That is to say, under the same driving conditions, the light utilization rate of the module architecture of the present invention is increased to about 180% compared with the existing one; in order to achieve a module brightness of 500 nits, the power consumption of the existing architecture is about 2.6 watts (W), while the power consumption of the module architecture of the present invention can be reduced to about 1.3 watts (W). Furthermore, in conventional backlight modules, the ratio (OD / P) of the distance OD between the surface 122 of the reflective layer 12 and the light color conversion unit 24 to the distance P between two adjacent light-emitting diodes 13 needs to be greater than 0.38 to achieve the desired visual effect; however, Figure 6 In the backlight module 10, an OD / P ratio greater than 0.17 is sufficient to achieve visual improvement.
[0087] Figure 7 This is a cross-sectional schematic diagram of the backlight module of an electronic device according to another embodiment of the present invention. Figure 7 and Figure 1 and Figure 2 Identical or similar components will be labeled with the same or similar designations, and their descriptions will be omitted. Figure 7 The backlight module and Figure 6 Similarities, except for the following differences.
[0088] exist Figure 7 In the backlight module 10, the microstructure array optical film 27 is as follows: Figure 3A and Figure 3BThe microstructure array optical film 27 shown has a planar lower surface 272 and selectively includes at least one reflective unit 276. Each reflective unit 276 corresponds to one of the light-emitting diodes 13, meaning that the reflective unit 276 and the light-emitting diode 13 at least partially overlap in the top view (direction Z). In this embodiment, each reflective unit 276 corresponds to one light-emitting diode 13; however, the invention is not limited to this. In other embodiments of the invention, some light-emitting diodes 13 may have a corresponding reflective unit 276, while other light-emitting diodes 13 may not have a corresponding reflective unit 276. Furthermore, the area (A1) of the reflective unit 276 may be between 50% and 150% of the area (A2) of the light-emitting surface 131 on the light-emitting diode 13, i.e., 50% ≤ A1 / A2 ≤ 150%.
[0089] The reflective element 276 may be formed on the lower surface 272 by coating, lamination, vapor deposition, or other methods. The reflective element 276 may include a material with reflectivity, such as white ink or metal (e.g., silver, aluminum, gold, chromium, or alloys thereof). The reflectivity of the reflective element 276 may be between 75% and 99%. In another embodiment of the invention, the reflectivity of the reflective element 276 may be between 80% and 95%. More specifically, the "reflectivity" described in this embodiment refers to the percentage of the light intensity measured after the light source is reflected by the reflective element 276 divided by the light intensity of the light source before it is reflected by the reflective element 276. The light intensity described in this invention refers to the spectral integral value of the light source (which may include, for example, display light or ambient light). The light source may include, for example, visible light (e.g., wavelengths between 380 nm and 780 nm) or ultraviolet light (e.g., wavelengths less than 365 nm), but is not limited thereto.
[0090] When the lower surface 272 of the microstructure array optical film 27 is also provided with a reflective unit 276, the optical utilization rate can be further improved, and the brightness or uniformity of the backlight module can be further enhanced.
[0091] In other embodiments of the invention, the light color conversion unit 24 may be integrated with the protective layer 14. More specifically, the light color conversion unit 24 may be a phosphor, quantum dot, or a combination thereof that can convert blue light into red and green light, and may be added to the optical adhesive or silicone of the protective layer 14. This further reduces the thickness of the backlight module 10.
[0092] In this invention, there are no special restrictions on the arrangement order of the light color conversion unit 24 and the microstructure array optical film 27. For example, in Figure 2 , Figures 5 to 7 In the backlight module 10, the microstructure array optical film 27 is disposed on the light color conversion unit 24; however, in another embodiment of the present invention, the light color conversion unit 24 may be disposed on the microstructure array optical film 27.
[0093] In this invention, there is no particular limitation on the number of microstructure array optical films 27 used. For example, in Figure 2 , Figures 5 to 7 In the backlight module 10, multiple microstructure array optical films 27 can be selectively used. When multiple microstructure array optical films 27 are used, the structure of each microstructure array optical film 27 can be the same or different, depending on the design. In addition, the placement position of each microstructure array optical film 27 can also be the same or different; for example, they can be placed on or below the light color conversion unit 24 respectively.
[0094] In summary, the electronic device provided by the present invention has a special backlight module structure, thereby achieving the purpose of reducing the density of the light source (i.e., light-emitting diode) in the backlight module, reducing manufacturing costs, improving light efficiency, reducing power consumption, or improving visual effects.
[0095] In this invention, features of each embodiment can be arbitrarily mixed and matched as long as they do not violate the spirit of the invention or conflict with it.
[0096] Although the invention has been illustrated by various embodiments, it should be understood that many other possible modifications and variations may be made without departing from the spirit and scope of the claims.
[0097] Furthermore, the above embodiments are merely illustrative examples for ease of explanation, and the scope of the claims of this invention should be determined by the scope of the claims, rather than being limited to the above embodiments.
Claims
1. An electronic device, characterized in that, include: One substrate; Multiple light-emitting units, including a light-emitting layer, are disposed on the substrate, and the light-emitting units are blue light-emitting units; A reflective layer is disposed on the substrate and located between two adjacent light-emitting units; and A light color conversion unit is disposed on these light-emitting units; The reflective layer has a distance between its surface and the light-color conversion unit; the light-emitting units have a spacing between two adjacent light-emitting units; and the ratio of this distance to the spacing is greater than 0.09 and less than 0.
38. A microstructure array optical film is disposed on the light color conversion unit, wherein the microstructure array optical film has an upper surface and a lower surface, the upper surface is opposite to the lower surface, the lower surface faces the light color conversion unit and is provided with a plurality of columnar protrusions, the columnar protrusions extend in one direction, and the upper surface includes a plurality of polyhedral grooves.
2. The electronic device according to claim 1, characterized in that, The ratio of this distance to this spacing is greater than 0.17 and less than 0.
38.
3. The electronic device according to claim 1, characterized in that, The ratio of this distance to this spacing is greater than 0.09 and less than 0.
17.
4. The electronic device according to claim 1, characterized in that, The reflective layer is made of metal.
5. The electronic device according to claim 1, characterized in that, This light-color conversion unit contains quantum dots.
6. The electronic device according to claim 1, characterized in that, It also includes a protective layer that covers these light-emitting units.
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