Multifunctional optoelectronic memristor device and preparation method of optoelectronic memristor device array

Abstract

The application relates to a multifunctional optoelectronic memristor device and a preparation method of an optoelectronic memristor device array. The multifunctional optoelectronic memristor device comprises a bottom electrode made of a preset coating material; a resistance change layer arranged above the bottom electrode and used for forming a conductive filament; a transition layer arranged above the resistance change layer, used for constructing surface defect states between the resistance change layer and the transition layer and providing oxygen ions satisfying a pre-designed quantity condition; and an upper electrode arranged above the transition layer and used for protecting the resistance change layer, the transition layer and the bottom electrode. Thus, the multifunctional optoelectronic memristor device is prepared at a source end of a CMOS transistor, 128*8 optoelectronic memristors are integrated through a peripheral circuit and a bottom decoding circuit and interconnection lines, the problem that an optoelectronic device researched by an artificial visual system is single in function and lacks large-scale integration at the present stage is solved, the fusion of device multifunction and multimode is realized, and a hardware basis is provided for the realization of a sensing, storing and calculating integrated system.

Description

Technical Field

[0001] This application relates to the field of biomimetic intelligent sensing technology, and in particular to a method for fabricating a multifunctional opto-memristor device and an opto-memristor device array. Background Technology

[0002] Humans primarily acquire information through their visual systems, making artificial vision systems a focus of attention in the field of intelligence. They are widely used in areas such as autonomous driving, military tracking, navigation for the blind, and intelligent refereeing. However, traditional visual architectures face a critical bottleneck: their development relies on efficient information acquisition and processing capabilities. Current intelligent sensing technologies, based on a discrete architecture of image acquisition, storage, and computation, involve extensive data transfer between different levels, reducing processing speed and generating significant power consumption. In contrast, integrated sensing-memory-computing devices can simulate the workings of the human retina and brain, utilizing neural network algorithms for parallel image processing. By embedding computing power in memory, a new computational architecture based on photocurrent calculations and Kirchhoff's laws enables two-dimensional and three-dimensional matrix multiplication / addition operations, significantly improving the timeliness of artificial vision systems.

[0003] In related technologies, this research is still in its early stages of development, mostly focusing on single-function optoelectronic devices and lacking large-scale integration. As a result, this architecture can currently only achieve simple visual processing functions in specific scenarios.

[0004] However, many neural network acceleration algorithms often require the collaboration of multiple devices with different functions, which makes it difficult to efficiently complete the deep processing of unstructured data, and this problem urgently needs to be solved. Summary of the Invention

[0005] This application provides a method for fabricating a multifunctional opto-memristor device and an opto-memristor device array, addressing the current limitations of single-function opto-memristor devices and lack of large-scale integration in artificial vision systems. It achieves the fusion of multifunctional and multimodal capabilities, providing a hardware foundation for the realization of integrated sensing, storage, and computing.

[0006] To achieve the above objectives, the first aspect of this application proposes a multifunctional opto-memristor device, comprising: a bottom electrode, a resistive switching layer, a transition layer, and a top electrode, to convert the dynamic opto-electric characteristics of the multifunctional opto-memristor device into non-volatile opto-electric characteristics through electrical soft breakdown operation, wherein...

[0007] The bottom electrode is made of a pre-defined coating material;

[0008] The resistive switching layer is disposed above the bottom electrode and is used to form conductive filaments;

[0009] The transition layer, disposed above the resistive switching layer, is used to construct surface defect states between the resistive switching layer and the transition layer, and to provide oxygen ions that meet preset metrological conditions.

[0010] The upper electrode is disposed above the transition layer and is used to protect the resistive switching layer, the transition layer and the bottom electrode.

[0011] According to one embodiment of this application, the preset coating material is titanium nitride.

[0012] According to one embodiment of this application, the resistive switching layer is made of zinc oxide.

[0013] According to one embodiment of this application, the transition layer is made of titanium.

[0014] According to one embodiment of this application, the upper electrode is made of palladium metal.

[0015] The multifunctional optoelectronic memristor device proposed in this application includes a bottom electrode, a resistive switching layer, a transition layer, and a top electrode. Through electrical soft breakdown, the dynamic optoelectronic characteristics of the multifunctional optoelectronic memristor device are converted into non-volatile optoelectronic characteristics. The bottom electrode is made of a pre-defined coating material; the resistive switching layer is disposed above the bottom electrode to form conductive filaments; the transition layer is disposed above the resistive switching layer to construct surface defect states between the resistive switching layer and the transition layer, and to provide oxygen ions that meet pre-defined metrological conditions; the top electrode is disposed above the transition layer to protect the resistive switching layer, the transition layer, and the bottom electrode. This solves the problem of limited functionality and lack of large-scale integration in current artificial vision system research at the optoelectronic device level, achieving the fusion of multifunctional and multimodal devices, and providing a hardware foundation for the realization of integrated sensing, storage, and computing.

[0016] To achieve the above objectives, a second aspect of this application provides a method for fabricating an array of opto-memristor devices, employing the multifunctional opto-memristor device described in the first aspect embodiment. The multifunctional opto-memristor device is connected to a transistor. The method includes the following steps:

[0017] Obtain the fabrication requirements for the opto-memristor device array to be fabricated;

[0018] Based on the aforementioned fabrication requirements, at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated are determined.

[0019] A bit line transition matrix is ​​generated based on at least one bit line to be brought out, and a word line transition matrix is ​​generated based on at least one word line to be brought out. The opto-memristor array to be prepared is obtained based on the bit line transition matrix and the word line transition matrix. Multiply-accumulate operations are performed using the opto-memristor array to be prepared based on a preset Kirchhoff's law and / or a preset Ohm's law.

[0020] According to one embodiment of this application, the step of generating a bit line transition matrix based on the at least one bit line to be brought out, and generating a word line transition matrix based on the at least one word line to be brought out, includes:

[0021] Each bit line to be extracted is extracted individually to obtain the first extraction result, and the bit line transformation matrix is ​​obtained based on the first extraction result;

[0022] After interconnecting all the bit lines to be led out with each word line to be led out through the upper electrode of the preset terminal of the transistor, a second lead-out result is obtained, and the word line transition matrix is ​​obtained according to the second lead-out result.

[0023] According to the fabrication method of the opto-memristor device array proposed in this application, based on the fabrication requirements of the opto-memristor device array to be fabricated, at least one bit line to be led out and at least one word line to be led out are determined. A bit line transition matrix is ​​generated based on the at least one bit line to be led out, and a word line transition matrix is ​​generated based on the at least one word line to be led out. The opto-memristor device array to be fabricated is obtained based on the bit line transition matrix and the word line transition matrix. Multiplication and accumulation operations are performed using the opto-memristor device array to be fabricated based on preset Kirchhoff's laws and / or preset Ohm's laws. Thus, by fabricating multifunctional opto-memristor devices at the source end of a CMOS transistor, and integrating 128×8 opto-memristors through peripheral circuits, bottom decoding circuits, and interconnects, the problem of single-function opto-memristors and lack of large-scale integration in current artificial vision systems is solved. This achieves the fusion of multifunctional and multimodal devices, providing a hardware foundation for the realization of integrated sensing, storage, and computing.

[0024] To achieve the above objectives, a third aspect of this application provides an apparatus for fabricating an opto-memristor device array, employing the multifunctional opto-memristor device described in the first aspect embodiment. The multifunctional opto-memristor device is connected to a transistor. The apparatus includes:

[0025] The acquisition module is used to acquire the fabrication requirements of the opto-memristor device array to be fabricated;

[0026] The determination module is used to determine, based on the fabrication requirements, at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated;

[0027] An accumulation module is used to generate a bit line transition matrix based on the at least one bit line to be brought out, and to generate a word line transition matrix based on the at least one word line to be brought out, and to obtain the opto-memristor device array to be prepared based on the bit line transition matrix and the word line transition matrix, so as to perform multiplication and accumulation operations using the opto-memristor device array to be prepared based on a preset Kirchhoff's law and / or a preset Ohm's law.

[0028] According to one embodiment of this application, the accumulation module is specifically used for:

[0029] Each bit line to be extracted is extracted individually to obtain the first extraction result, and the bit line transformation matrix is ​​obtained based on the first extraction result;

[0030] After interconnecting all the bit lines to be led out with each word line to be led out through the upper electrode of the preset terminal of the transistor, a second lead-out result is obtained, and the word line transition matrix is ​​obtained according to the second lead-out result.

[0031] According to the fabrication apparatus for the opto-memristor device array proposed in this application, based on the fabrication requirements of the opto-memristor device array to be fabricated, at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated are determined. A bit line transition matrix is ​​generated based on the at least one bit line to be led out, and a word line transition matrix is ​​generated based on the at least one word line to be led out. The opto-memristor device array to be fabricated is obtained based on the bit line transition matrix and the word line transition matrix. Multiplication and accumulation operations are performed using the opto-memristor device array to be fabricated based on preset Kirchhoff's laws and / or preset Ohm's laws. Thus, by fabricating multifunctional opto-memristor devices at the source end of a CMOS transistor, and integrating 128×8 opto-memristors through peripheral circuits, bottom decoding circuits, and interconnects, the problem of single-function opto-memristors and lack of large-scale integration at the opto-device level in current artificial vision systems is solved, realizing the fusion of multifunctional and multimodal devices, and providing a hardware foundation for the realization of integrated sensing, storage, and computing.

[0032] To achieve the above objectives, a fourth aspect of this application provides an electronic device, comprising: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method for fabricating an opto-memristor device array as described in the above embodiments.

[0033] To achieve the above objectives, a fifth aspect of this application provides a computer-readable storage medium storing a computer program that is executed by a processor to implement the method for fabricating an opto-memristor device array as described in the above embodiments.

[0034] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0035] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0036] Figure 1 This is a block diagram of a multifunctional opto-memristor device according to an embodiment of this application;

[0037] Figure 2 This is a schematic diagram of an opto-memristor device with dynamic opto-memory characteristics according to an embodiment of this application, and the regulation of the dynamic opto-memory characteristics with the intensity of light pulses.

[0038] Figure 3 This is a schematic diagram of an opto-memristor device and its current-voltage response in electrical modes according to an embodiment of this application;

[0039] Figure 4 This is a schematic diagram illustrating the non-volatile opto-memristor in electrical mode according to an embodiment of this application and the modulation of its dynamic opto-characteristics with the intensity of the light pulse.

[0040] Figure 5 This is a flowchart illustrating a method for fabricating an optoelectronic memristor device array according to an embodiment of this application;

[0041] Figure 6 This is a schematic diagram of the structure of an opto-memristor device array according to an embodiment of this application;

[0042] Figure 7 This is a flowchart of a method for fabricating an opto-memristor device array according to an embodiment of this application;

[0043] Figure 8 This is a block diagram of an apparatus for fabricating an opto-memristor device array according to an embodiment of this application;

[0044] Figure 9 This is a schematic diagram of the structure of an electronic device according to an embodiment of this application. Detailed Implementation

[0045] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0046] The following describes, with reference to the accompanying drawings, the fabrication method and apparatus of the multifunctional opto-memristor device and opto-memristor device array according to the embodiments of this application. First, the multifunctional opto-memristor device according to the embodiments of this application will be described with reference to the accompanying drawings.

[0047] Figure 1 This is a block diagram of a multifunctional opto-memristor device according to an embodiment of this application.

[0048] like Figure 1 As shown, the multifunctional opto-memristor device 10 includes a bottom electrode 100, a resistive switching layer 200, a transition layer 300, and an upper electrode 400, so as to convert the dynamic opto-electric characteristics of the multifunctional opto-memristor device 10 into non-volatile opto-electric characteristics through electrical soft breakdown operation.

[0049] Specifically, the multifunctional opto-memristor device 10 proposed in this application embodiment has three opto-electronic characteristics, namely dynamic opto-memory characteristics, electro-resistive switching characteristics, and non-volatile opto-electronic characteristics, combined with Figures 2-4 As shown, Figure 2 (a) is a schematic diagram of an opto-memristor device with dynamic opto-memory characteristics. Figure 2 (b) is a schematic diagram showing how the dynamic photoelectric memory characteristics are modulated by the intensity of the light pulse. Figure 3 (a) is a schematic diagram of the opto-memristor device in electrical modes. Figure 3 (b) is a schematic diagram of the current response of an electrical memristor device as a function of voltage. Figure 4 (a) is a schematic diagram of a non-volatile opto-memristor device in electrical modes. Figure 4 (b) is a schematic diagram showing the dynamic photoelectric characteristics as the intensity of the light pulse is adjusted. Through electrical soft breakdown operation, the dynamic photoelectric characteristics of the multifunctional photoelectric memristor device 10 can be converted into non-volatile photoelectric characteristics.

[0050] Therefore, the multifunctional opto-memristor device 10 designed in this application embodiment can be arbitrarily selected and configured according to the algorithm network requirements, which solves the problem that most existing opto-devices have single functions and are difficult to achieve multifunctional and multimodal reconfigurable configuration, gets rid of the problem that existing opto-devices are limited in application in complex scenarios, and improves the wide applicability of the device.

[0051] The bottom electrode 100 is made of a preset coating material; the resistive switching layer 200 is disposed above the bottom electrode 100 to form conductive filaments; the transition layer 300 is disposed above the resistive switching layer 200 to construct surface defect states between the resistive switching layer 200 and the transition layer 300, and to provide oxygen ions that meet preset metrological conditions; the upper electrode 400 is disposed above the transition layer 300 to protect the resistive switching layer 200, the transition layer 300 and the bottom electrode 100.

[0052] In some embodiments, the preset coating material is titanium nitride; the resistive switching layer 200 is made of zinc oxide; the transition layer 300 is made of titanium; and the upper electrode 400 is made of palladium metal.

[0053] Specifically, such as Figure 2 As shown in (a), the device structure, from bottom to top, consists of a bottom electrode 100, a resistive switching layer 200, a transition layer 300, and a top electrode 400. The bottom electrode 100 is made of a predetermined coating material, namely TiN (titanium nitride), which is compatible with CMOS (Complementary Metal Oxide Semiconductor) technology. The resistive switching layer 200 is made of a material with excellent photoelectric properties, such as ZnO (zinc oxide), to form conductive filaments and has a sensitive photogenerated carrier effect. The transition layer 300 is made of an active metal, such as Ti (titanium) which is converted to TiOx (titanium oxide) through self-oxidation. This is used to construct the surface defect states (ZnO / TiOx) between the resistive switching layer 200 and the transition layer 300, and to provide oxygen ions (i.e., non-stoichiometric oxygen ions) that meet the predetermined stoichiometric conditions, so that the spectral response range can be extended to visible light. The top electrode 400 is made of metal Pd (palladium) to protect the resistive switching layer 200, the transition layer 300, and the bottom electrode 100.

[0054] It should be noted that the multifunctional opto-memristor device proposed in the embodiments of this application can also be fabricated using other types of opto-memristor devices to achieve triple opto-memristor properties, and the materials used are not limited to oxides, two-dimensional materials and other nanomaterials, and the fabrication methods are not limited to physical, chemical deposition and exfoliation methods, etc., and are not limited to one method here.

[0055] The multifunctional optoelectronic memristor device proposed in this application includes a bottom electrode, a resistive switching layer, a transition layer, and a top electrode. Through electrical soft breakdown, the dynamic optoelectronic characteristics of the multifunctional optoelectronic memristor device are converted into non-volatile optoelectronic characteristics. The bottom electrode is made of a pre-defined coating material; the resistive switching layer is disposed above the bottom electrode to form conductive filaments; the transition layer is disposed above the resistive switching layer to construct surface defect states between the resistive switching layer and the transition layer, and to provide oxygen ions that meet pre-defined metrological conditions; the top electrode is disposed above the transition layer to protect the resistive switching layer, the transition layer, and the bottom electrode. This solves the problem of limited functionality and lack of large-scale integration in current artificial vision system research at the optoelectronic device level, achieving the fusion of multifunctional and multimodal devices, and providing a hardware foundation for the realization of integrated sensing, storage, and computing.

[0056] Next, with reference to the accompanying drawings, a method for fabricating an opto-memristor device array according to an embodiment of this application is described.

[0057] Figure 5This is a flowchart of a method for fabricating an opto-memristor device array according to an embodiment of this application. The method for fabricating the opto-memristor device array employs the following... Figure 1 The multifunctional opto-memristor device shown in the embodiment is connected to a transistor.

[0058] It is understood that the embodiments of this application integrate a multifunctional opto-memristor device with triple optoelectronic characteristics onto a circuit with a decoder, and connect the multifunctional opto-memristor device to a transistor, that is, fabricate the multifunctional opto-memristor device at the source end of the transistor. This not only avoids the opto-operation from causing breakdown of the multifunctional opto-memristor device, but also enables current limiting and selection of the multifunctional opto-memristor device.

[0059] like Figure 5 As shown, the fabrication method of this opto-memristor device array includes the following steps:

[0060] In step S501, the fabrication requirements of the opto-memristor device array to be fabricated are obtained.

[0061] In this embodiment, such as Figure 6 As shown, the basic unit of the opto-memristor device array to be fabricated is a 1T opto-memristor device structure, and the array substrate to be fabricated is 128×8 1K-bit.

[0062] In step S502, based on the fabrication requirements, at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated are determined.

[0063] In step S503, a bit line transition matrix is ​​generated based on at least one bit line to be brought out, and a word line transition matrix is ​​generated based on at least one word line to be brought out. The opto-memristor device array to be prepared is obtained based on the bit line transition matrix and the word line transition matrix. Multiply-accumulate operation is performed using the opto-memristor device array to be prepared based on a preset Kirchhoff law and / or a preset Ohm law.

[0064] It is understood that, in the embodiments of this application, an opto-memristor device array to be fabricated can be obtained based on a bit line transition matrix generated from at least one bit line to be led out and a word line transition matrix generated from at least one word line to be led out. The opto-memristor device array to be fabricated can then perform an accumulation operation based on a preset Kirchhoff's law and / or a preset Ohm's law. That is, the opto-memristor device array to be fabricated can perform a multiply-accumulate operation based on a preset Kirchhoff's law, or it can perform a multiply-accumulate operation based on a preset Ohm's law, or it can perform a multiply-accumulate operation based on both a preset Kirchhoff's law and a preset Ohm's law.

[0065] Furthermore, in some embodiments, generating a bit line transition matrix based on at least one bit line to be brought out, and generating a word line transition matrix based on at least one word line to be brought out, includes: bringing out each bit line to be brought out individually to obtain a first lead-out result, and obtaining a bit line transition matrix based on the first lead-out result; interconnecting all bit lines to be brought out with each word line to be brought out through the upper electrode of a transistor preset terminal to obtain a second lead-out result, and obtaining a word line transition matrix based on the second lead-out result.

[0066] Specifically, in this embodiment, each bit line to be led out of the opto-memristor device array to be prepared is led out individually to obtain a first lead-out result, and a bit line transition matrix is ​​obtained based on the first lead-out result; the word lines to be led out are selected by a decoder, and all the bit lines to be led out are interconnected with each word line to be led out through the upper electrode of the preset terminal (i.e., the upper end) of the transistor, thereby obtaining a second lead-out result, and a word line transition matrix is ​​obtained based on the second lead-out result.

[0067] To facilitate those skilled in the art to further understand the fabrication method of the optoelectronic memristor device array proposed in the embodiments of this application, the following is combined with... Figure 7 Further explanation is needed.

[0068] like Figure 7 As shown, the fabrication method of the opto-memristor device array includes the following steps:

[0069] In step S701, the transistors and their interconnections connected to the multifunctional opto-memristor device are all fabricated using silicon-based CMOS technology and remain on the TiN layer to prepare a 1K-bit opto-memristor device array with a substrate size of 128×8.

[0070] In step S702, the functional layer is patterned and interconnected with the upper electrode, and photolithography can be performed using ultraviolet exposure.

[0071] Step S703: Magnetron reactive sputtering of ZnO at 20-50 nm, controlling the vacuum level of the sputtering equipment cavity to be below 1E-4 Pa to eliminate the influence of other gases on the deposition, pre-sputtering for 10-15 min to eliminate surface contamination, and controlling the Ar:O ratio to be 40:5 during sputtering.

[0072] In step S704, 5nm of Ti is deposited by electron beam evaporation. The vacuum of the backing layer is controlled below 1E-6Pa to avoid other gases affecting the evaporation. The evaporation rate needs to be controlled at 0.1nm / s.

[0073] In step S705, electron beam evaporation of 5nm Pd can protect the functional layer. The background vacuum is controlled below 1E-6Pa to avoid other gases affecting the evaporation. The evaporation rate needs to be controlled at 0.1nm / s.

[0074] Step S706 involves a stripping process, in which the Pd-sputtered sample is immersed in acetone, subjected to low-power ultrasound, and then the silicon wafer is cleaned with alcohol and deionized water.

[0075] It is understood that the fabrication method of the opto-memristor device array proposed in this application embodiment is integrated with CMOS technology. It can not only be grown and integrated on a large scale at room temperature, but also be process-compatible with CMOS substrates with decoding circuits. In addition, the 1K-bit 1T-1 opto-memristor device array fabricated on this basis in this application embodiment provides a hardware foundation for realizing integrated sensing, storage and computing.

[0076] According to the fabrication method of the opto-memristor device array proposed in this application, based on the fabrication requirements of the opto-memristor device array to be fabricated, at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated are determined. A bit line transition matrix is ​​generated based on the at least one bit line to be led out, and a word line transition matrix is ​​generated based on the at least one word line to be led out. The opto-memristor device array to be fabricated is obtained based on the bit line transition matrix and the word line transition matrix. Multiplication and accumulation operations are performed using the opto-memristor device array to be fabricated based on preset Kirchhoff's laws and / or preset Ohm's laws. Thus, by fabricating multifunctional opto-memristor devices at the source end of a CMOS transistor, and integrating 128×8 opto-memristors through peripheral circuits, bottom decoding circuits, and interconnects, the problem of single-function opto-memristors and lack of large-scale integration in the current research on artificial vision systems is solved. This achieves the fusion of multifunctional and multimodal devices, providing a hardware foundation for the realization of integrated sensing, storage, and computing.

[0077] Further, the fabrication apparatus for an opto-memristor device array according to an embodiment of this application is described with reference to the accompanying drawings.

[0078] Figure 8 This is a block diagram of an apparatus for fabricating an opto-memristor device array according to an embodiment of this application. The fabrication method of the opto-memristor device array employs the following... Figure 1 The multifunctional opto-memristor device shown in the embodiment is connected to a transistor.

[0079] like Figure 8 As shown, the device 20 includes: an acquisition module 500, a determination module 600, and an accumulation module 700.

[0080] Among them, the acquisition module 500 is used to acquire the fabrication requirements of the opto-memristor device array to be fabricated;

[0081] The determination module 600 is used to determine at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated, based on the fabrication requirements.

[0082] The accumulation module 700 is used to generate a bit line transition matrix based on at least one bit line to be brought out, and to generate a word line transition matrix based on at least one word line to be brought out, and to obtain the opto-memristor device array to be prepared based on the bit line transition matrix and the word line transition matrix, so as to perform multiplication and accumulation operations using the opto-memristor device array to be prepared based on the preset Kirchhoff's law and / or the preset Ohm's law.

[0083] Furthermore, in some embodiments, the accumulation module 700 is specifically used for:

[0084] Each bit line to be extracted is extracted individually to obtain the first extraction result, and the bit line transformation matrix is ​​obtained based on the first extraction result;

[0085] After interconnecting all the bit lines to be brought out with each word line to be brought out by the upper electrode of the preset terminal of the transistor, the second lead-out result is obtained, and the word line transition matrix is ​​obtained according to the second lead-out result.

[0086] It should be noted that the foregoing explanation of the method for fabricating an opto-memristor device array also applies to the fabrication apparatus for the opto-memristor device array in this embodiment, and will not be repeated here.

[0087] According to the fabrication apparatus for the opto-memristor device array proposed in this application, based on the fabrication requirements of the opto-memristor device array to be fabricated, at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated are determined. A bit line transition matrix is ​​generated based on the at least one bit line to be led out, and a word line transition matrix is ​​generated based on the at least one word line to be led out. The opto-memristor device array to be fabricated is obtained based on the bit line transition matrix and the word line transition matrix. Multiplication and accumulation operations are performed using the opto-memristor device array to be fabricated based on preset Kirchhoff's laws and / or preset Ohm's laws. Thus, by fabricating multifunctional opto-memristor devices at the source end of a CMOS transistor, and integrating 128×8 opto-memristors through peripheral circuits, bottom decoding circuits, and interconnects, the problem of single-function opto-memristors and lack of large-scale integration in the current research on artificial vision systems is solved. This achieves the fusion of multifunctional and multimodal devices, providing a hardware foundation for the realization of integrated sensing, storage, and computing.

[0088] Figure 9 A schematic diagram of the structure of an electronic device provided in an embodiment of this application. The electronic device may include:

[0089] The memory 901, the processor 902, and the computer program stored on the memory 901 and capable of running on the processor 902.

[0090] When the processor 902 executes the program, it implements the fabrication method of the opto-memristor device array provided in the above embodiments.

[0091] Furthermore, electronic devices also include:

[0092] Communication interface 903 is used for communication between memory 901 and processor 902.

[0093] The memory 901 is used to store computer programs that can run on the processor 902.

[0094] The memory 901 may include high-speed RAM (Random Access Memory) memory, and may also include non-volatile memory, such as at least one disk storage.

[0095] If the memory 901, processor 902, and communication interface 903 are implemented independently, then the communication interface 903, memory 901, and processor 902 can be interconnected via a bus to complete communication between them. The bus can be an ISA (Industry Standard Architecture) bus, a PCI (Peripheral Component Interconnect) bus, or an EISA (Extended Industry Standard Architecture) bus, etc. The bus can be divided into address bus, data bus, control bus, etc. For ease of representation, Figure 9 The bus is represented by a single thick line, but this does not mean that there is only one bus or one type of bus.

[0096] Optionally, in a specific implementation, if the memory 901, processor 902, and communication interface 903 are integrated on a single chip, then the memory 901, processor 902, and communication interface 903 can communicate with each other through an internal interface.

[0097] The processor 902 may be a CPU (Central Processing Unit), an ASIC (Application Specific Integrated Circuit), or one or more integrated circuits configured to implement the embodiments of this application.

[0098] This application also provides a computer-readable storage medium storing a computer program thereon, which, when executed by a processor, implements the above-described method for fabricating an opto-memristor device array.

[0099] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0100] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0101] Although embodiments of this application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting this application. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of this application.

Claims

1. A multifunctional opto-memristor device, characterized in that, include: The bottom electrode, resistive switching layer, transition layer, and top electrode are used to transform the dynamic optoelectronic characteristics of the multifunctional opto-memristor device into non-volatile optoelectronic characteristics through electrical soft breakdown operation. The bottom electrode is made of a pre-defined coating material; The resistive switching layer is disposed above the bottom electrode and is used to form conductive filaments; The transition layer, disposed above the resistive switching layer, is used to construct surface defect states between the resistive switching layer and the transition layer, and to provide oxygen ions that meet preset metrological conditions. The upper electrode is disposed above the transition layer and is used to protect the resistive switching layer, the transition layer and the bottom electrode.

2. The multifunctional opto-memristor device according to claim 1, characterized in that, The preset coating material is titanium nitride.

3. The multifunctional opto-memristor device according to claim 2, characterized in that, The resistive switching layer is made of zinc oxide.

4. The multifunctional opto-memristor device according to claim 3, characterized in that, The transition layer is made of titanium.

5. The multifunctional opto-memristor device according to claim 4, characterized in that, The upper electrode is made of palladium metal.

6. A method for fabricating an array of opto-memristor devices, characterized in that, The method employs a multifunctional opto-memristor device as described in any one of claims 1-5, wherein the multifunctional opto-memristor device is connected to a transistor, and the method comprises: Obtain the fabrication requirements for the opto-memristor device array to be fabricated; Based on the aforementioned fabrication requirements, at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated are determined. A bit line transition matrix is ​​generated based on at least one bit line to be brought out, and a word line transition matrix is ​​generated based on at least one word line to be brought out. The opto-memristor array to be prepared is obtained based on the bit line transition matrix and the word line transition matrix. Multiply-accumulate operations are performed using the opto-memristor array to be prepared based on a preset Kirchhoff's law and / or a preset Ohm's law.

7. The method according to claim 6, characterized in that, The step of generating a bit line transition matrix based on the at least one bit line to be brought out, and generating a word line transition matrix based on the at least one word line to be brought out, includes: Each bit line to be extracted is extracted individually to obtain the first extraction result, and the bit line transformation matrix is ​​obtained based on the first extraction result; After interconnecting all the bit lines to be led out with each word line to be led out through the upper electrode of the preset terminal of the transistor, a second lead-out result is obtained, and the word line transition matrix is ​​obtained according to the second lead-out result.

8. An apparatus for fabricating an opto-memristor device array, characterized in that, The device employs a multifunctional opto-memristor as described in any one of claims 1-5, wherein the multifunctional opto-memristor is connected to a transistor, and the device comprises: The acquisition module is used to acquire the fabrication requirements of the opto-memristor device array to be fabricated; The determination module is used to determine, based on the fabrication requirements, at least one bit line to be led out and at least one word line to be led out of the opto-memristor device array to be fabricated; An accumulation module is used to generate a bit line transition matrix based on the at least one bit line to be brought out, and to generate a word line transition matrix based on the at least one word line to be brought out, and to obtain the opto-memristor device array to be prepared based on the bit line transition matrix and the word line transition matrix, so as to perform multiplication and accumulation operations using the opto-memristor device array to be prepared based on a preset Kirchhoff's law and / or a preset Ohm's law.

9. An electronic device, characterized in that, include: A memory, a processor, and a computer program stored in the memory and executable on the processor, the processor executing the program to implement the method for fabricating an opto-memristor device array as described in any one of claims 6-7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, The program is executed by a processor to implement the method for fabricating an opto-memristor device array as described in any one of claims 6-7.

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