A PVD magnetron sputtering device for preventing magnetization of the substrate

Abstract

This application belongs to the field of magnetron sputtering, and in particular relates to a PVD magnetron sputtering device for preventing the magnetization of a substrate, which includes a plurality of cathode magnetic rods and targets corresponding to the cathode magnetic rods one by one. The target is a target material cylinder sleeved around the outer periphery of the cathode magnetic rod. The cathode magnetic rod includes at least three magnetic strips, and the magnetic strips are attached to the inner wall of the target and are parallel and of the same length as the target; the magnetic poles of the magnetic strips in each cathode magnetic rod are arranged in a mirror image, and the magnetic poles of the magnetic strips in adjacent cathode magnetic rods are arranged in a reverse manner. This application has the effect of eliminating the magnetization phenomenon of the substrate during the magnetron sputtering process.

Description

Technical Field

[0001] The present application relates to the field of magnetron sputtering, and particularly to a PVD magnetron sputtering device for preventing substrate magnetization. Background Art

[0002] Magnetron sputtering is a type of Physical Vapor Deposition (PVD). By introducing a magnetic field using a cathode magnetic rod, coating of various materials such as metals, semiconductors, and insulators can be achieved by bombarding a target. It has advantages such as simple equipment, easy control, large coating area, and strong adhesion.

[0003] To increase the thickness of the coating or to set up a multi-layer composite coating of different materials, a combination of multiple sets of cathode magnetic rods and targets is usually required to meet the process requirements.

[0004] However, in small or integrated magnetron sputtering devices, as the coating process progresses, the substrate to be coated will inevitably be magnetized, which not only affects the subsequent positioning of the substrate but also affects the processing of the magnetized substrate in subsequent processes. Summary of the Invention

[0005] In order to solve the above technical problems and eliminate the magnetization phenomenon of the substrate during the magnetron sputtering process, the present application provides a PVD magnetron sputtering device for preventing substrate magnetization.

[0006] The PVD magnetron sputtering device for preventing substrate magnetization provided by the present application adopts the following technical solutions:

[0007] A PVD magnetron sputtering device for preventing substrate magnetization includes a plurality of cathode magnetic rods and targets corresponding to the cathode magnetic rods one by one. The target is a target material cylinder sleeved around the cathode magnetic rod. The cathode magnetic rod includes at least three magnetic strips, the magnetic strips are attached to the inner wall of the target and are parallel and equal in length to the target; the magnetic poles of the magnetic strips in each cathode magnetic rod are mirror-symmetrically arranged, and the magnetic poles of the magnetic strips in adjacent cathode magnetic rods are reversely arranged.

[0008] By adopting the above technical solutions, in a single cathode magnetic rod, the mirror-symmetrically arranged magnetic poles can generate a stronger magnetic field, enabling a stronger sputtering effect to be produced on the target, thereby ensuring the coating effect; the setting of multiple cathode magnetic rods can increase the thickness of the coating layer or deposit a different composite film to achieve a different effect; the reverse arrangement of the magnetic poles of the magnetic strips in adjacent cathode magnetic rods forms a closed magnetic field, which can significantly concentrate the magnetic induction lines on the side of the two cathode magnetic rods close to the magnetic strips, so that the main action area of the magnetic field does not include the setting station of the substrate to be coated, thus solving the problem of substrate magnetism.

[0009] Preferably, each of the cathode magnetic rods is provided with a first magnetic strip, a second magnetic strip, a third magnetic strip, and a fourth magnetic strip arranged in sequence. Each magnetic strip includes an intermediate section and end sections distributed on both sides of the intermediate section in the axial direction. The cathode magnetic rods include SNNS magnetic rods and NSSN magnetic rods, and the SNNS magnetic rods and NSSN magnetic rods are arranged alternately.

[0010] By adopting the above technical solution, when viewed from the end face of the cathode magnetic rod, the magnetic fields generated by the second magnetic strip and the third magnetic strip are balanced with the magnetic fields generated by the first magnetic strip and the fourth magnetic strip, so as to achieve a better effect of confining carriers. When viewed from the axial direction of the cathode magnetic rod, the magnetic strip includes an intermediate section and end sections. The intermediate section determines the magnetic pole of the magnetic strip, and the setting of the end sections can improve the circulation effect of carriers in the entire magnetic strip, reduce the end effect, improve the utilization rate of the target, and reduce waste without affecting the polarity of the magnetic strip.

[0011] Preferably, in the intermediate section of the magnetic strip, the magnetic induction lines of the second magnetic strip and the third magnetic strip of the SNNS magnetic rod face outside the target, and the magnetic induction lines of the first magnetic strip and the fourth magnetic strip face inside the target. The magnetic induction lines of the second magnetic strip and the third magnetic strip of the NSSN magnetic rod face inside the target, and the magnetic induction lines of the first magnetic strip and the fourth magnetic strip face outside the target.

[0012] By adopting the above technical solution, the four magnetic strips in the same cathode magnetic rod generate a mirror magnetic field. For a single cathode magnetic rod, it can produce a stronger bombardment effect on the target, increasing the coating thickness and efficiency. For adjacent SNNS magnetic rods and NSSN magnetic rods, the magnetic induction lines between the two gaps are closed, and the substrate will not be magnetized.

[0013] Preferably, in the intermediate section of the magnetic strip, the magnetic induction lines of the second magnetic strip and the third magnetic strip of the SNNS magnetic rod face outside the target, and the magnetic induction lines of the first magnetic strip and the fourth magnetic strip face each other. The magnetic induction lines of the second magnetic strip and the third magnetic strip of the NSSN magnetic rod face inside the target, and the magnetic induction lines of the first magnetic strip and the fourth magnetic strip are opposite to each other.

[0014] By adopting the above technical solution, the magnetic induction lines of the first magnetic strip and the fourth magnetic strip are relative or opposite. When the carriers move in the cathode magnetic rod, under the action of the magnetic field, there is a tendency to deflect towards the middle of the second magnetic strip and the third magnetic strip, reducing the end effect caused by the retention of carriers at the ends.

[0015] Preferably, in the end section of the magnetic strip, the magnetic induction lines of the first magnetic strip and the fourth magnetic strip of the SNNS magnetic rod face each other, and the magnetic induction lines of the first magnetic strip and the fourth magnetic strips of the NSSN magnetic rod are opposite to each other.

[0016] By adopting the above technical solution, the magnetic flux lines of the first magnetic stripe and the fourth magnetic stripe are opposite or opposite to each other. When the carriers move in the cathode magnetic bar, under the action of the magnetic field, they tend to deflect toward the middle of the second magnetic stripe and the third magnetic stripe, further reducing the end effect caused by the retention of carriers at the ends.

[0017] Preferably, at the end section of the magnetic stripe, the second magnetic stripe includes a first part close to the end surface and a second part close to the middle section, the magnetic flux lines of the first part of the SNNS magnetic bar are directed toward the third magnetic stripe, and the magnetic flux lines of the second part are directed toward the outside of the target material, at one end of the second magnetic stripe, the length of the first part is greater than the second part, and at the other end, the length of the first part is less than the second part; the magnetic flux lines of the first part of the NSSN magnetic bar are opposite to the third magnetic stripe, and the magnetic flux lines of the second part are directed toward the inside of the target material, at one end of the second magnetic stripe, the length of the first part is greater than the second part, and at the other end, the length of the first part is less than the second part.

[0018] By adopting the above technical solution, the magnetic flux lines of the second magnetic strip are offset toward the third magnetic strip near the two ends, guiding the carriers to deviate toward the third magnetic strip and be captured by the magnetic field of the third magnetic strip, thereby reducing the end effect caused by the retention of carriers at the ends.

[0019] Preferably, the third magnetic stripe is centrally symmetrically distributed with respect to the second magnetic stripe to form a closed internal magnetic field.

[0020] By adopting the above technical solution, the second magnetic strip and the third magnetic strip form a closed internal magnetic field for the carriers to circulate and move, especially improving the movement speed of the carriers in the end section and reducing the end effect.

[0021] Preferably, at both ends of the second magnetic stripe and the third magnetic stripe of the SNNS magnetic bar, the magnetic flux lines are oriented toward the inside of the target material; and at both ends of the second magnetic stripe and the third magnetic stripe of the NSSN magnetic bar, the magnetic flux lines are oriented toward the outside of the target material.

[0022] By adopting the above technical solution, when the carriers move to the end under the action of the magnetic fields of the second magnetic strip and the third magnetic strip, they encounter a magnetic field opposite to the previous one, which is beneficial to the turning and circulation of the carriers and reduces the end effect.

[0023] Preferably, each of the magnetic strips comprises a plurality of permanent magnet particles which are arranged sequentially and fit together.

[0024] By adopting the above technical solution, the magnetic stripe is formed by a combination of multiple permanent magnet particles. By adjusting the arrangement of standard permanent magnet particles, the magnetic flux lines at various locations of the magnetic stripe can be fine-tuned, and a special magnetic field distribution can be achieved without special customization.

[0025] Preferably, the magnetic strips are all located on one side of the arrangement axis of the cathode magnetic bar and away from the arrangement axis.

[0026] By adopting the above technical solution, the magnetic strips are concentrated on one side of the cathode magnetic bar, which can achieve a stronger magnetic field strength and a better coating effect.

[0027] In summary, the present application includes at least one of the following beneficial technical effects:

[0028] 1. The magnetic poles of the magnetic strips in adjacent cathode magnetic bars are set opposite to each other, forming a closed magnetic field at the gap between the adjacent cathode magnetic bars, which can obviously concentrate the magnetic flux lines on the side of the two cathode magnetic bars close to the magnetic strips, so that the main action area of ​​the magnetic field formed by the magnetic strips does not include the setting position of the substrate to be coated, thereby solving the problem of the substrate being magnetized;

[0029] 2. The setting of multiple cathode magnetic bars can increase the film thickness of the coating, or add heterogeneous composite films to achieve differentiation effects;

[0030] 3. Inside a single cathode magnetic bar, through the deflection of the magnetic flux lines at the end section, an internal closed magnetic field is formed without affecting the magnetic poles of the magnetic strip, accelerating the circulation of carriers, reducing their residence time at the end section, reducing the accelerated consumption of target materials by the end effect, improving the utilization rate of target materials, and reducing production costs;

[0031] 4. The magnetic stripe is formed by a combination of multiple permanent magnet particles. By adjusting the arrangement of standard permanent magnet particles, the magnetic flux lines at various parts of the magnetic stripe can be fine-tuned, and a special magnetic field distribution can be achieved without special customization. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic structural diagram of a PVD magnetron sputtering device for preventing substrate magnetization according to an embodiment of the present application;

[0033] Figure 2 is a schematic structural diagram of a magnetron sputtering unit of an embodiment of the present application;

[0034] Figure 3 is a schematic structural diagram of a cathode magnetic bar according to an embodiment of the present application;

[0035] Figure 4 is an axial view of the cathode magnetic bar of an embodiment of the present application;

[0036] Figure 5 A schematic diagram of the magnetic pole arrangement of the SNNS magnetic bar according to an embodiment of the present application;

[0037] Figure 6 Schematic diagram of the magnetic pole arrangement of the NSSN magnetic bar according to an embodiment of the present application.

[0038] Description of reference numerals:

[0039] 11. SNNS magnetic rod; 12. NSSN magnetic rod; 2. Magnetic strip; 21. Shell; 22. Permanent magnet particles; 23. First magnetic strip; 24. Second magnetic strip; 25. Third magnetic strip; 26. Fourth magnetic strip; 3. Target; 4. Substrate. Specific embodiments

[0040] The following will further describe this application in detail with reference to the Figure 1-6 accompanying drawings.

[0041] The embodiment of this application discloses a PVD magnetron sputtering device for preventing substrate magnetization.

[0042] Referring to Figure 1 , the PVD magnetron sputtering device for preventing substrate magnetization includes a plurality of cathode magnetic rods and targets 3 corresponding to the cathode magnetic rods one by one.

[0043] Referring to Figure 2 , the target 3 is a cylinder made of the material to be coated, sleeved outside the cathode magnetic rod and parallel to the cathode magnetic rod. The length of the target 3 is equal to or greater than that of the cathode magnetic rod. The target 3 also includes a supporting power unit. When the device works, the power unit drives the target 3 to rotate to improve the utilization rate of the target 3.

[0044] Referring to Figure 2 , Figure 3 , each cathode magnetic rod includes at least three magnetic strips 2, and the magnetic poles of the three magnetic strips 2 are arranged in a mirror image. Preferably, the magnetic strips 2 are the first magnetic strip 23, the second magnetic strip 24, the third magnetic strip 25, and the fourth magnetic strip 26 arranged in sequence. Among them, the magnetic poles of the second magnetic strip 24 and the third magnetic strip 25 are symmetrical, and the magnetic poles of the first magnetic strip 23 and the fourth magnetic strip 26 are symmetrical.

[0045] It should be noted that the magnetic poles of the magnetic strip 2 here represent the influence of the entire magnetic strip 2 on the carriers when the device is running at the magnetic strip 2 level. Hereinafter, the magnetic strip 2 with the most concentrated magnetic induction lines passing through the target 3 is called the N-pole magnetic strip, and the magnetic strip 2 with the most concentrated magnetic induction lines entering the target 3 is called the S-pole magnetic strip. The magnetic poles of the magnetic strip 2 do not mean that the corresponding magnetism exists everywhere in its length direction, and the direction of the magnetic induction lines described in this application only represents the direction of the most concentrated magnetic induction lines of the magnet.

[0046] Referring to Figure 1 , all the cathode magnetic rods are arranged in sequence. On one side of the arrangement axis, a substrate 4 is arranged at a certain distance from the target 3. Each magnetic strip 2 is attached to the inner wall of the target 3, and all the magnetic strips 2 are located on the side of their corresponding cathode magnetic rods close to the substrate 4.

[0047] Optionally, when coating a round bar workpiece, the cathode magnetic bars are arranged in a circumferential array centered on the axis of the round bar workpiece. All the magnetic strips 2 are located on the side of their corresponding cathode magnetic bars close to the round bar workpiece. When the coating process starts, both the target 3 and the round bar workpiece rotate. Preferably, their rotational angular velocities are different.

[0048] Optionally, adjacent targets 3 are close to each other, and the adjacent targets 3 have the same rotational angular velocity and opposite rotational directions.

[0049] Reference Figure 3 、 Figure 4 The magnetic strip 2 includes a shell 21 and permanent magnet particles 22. The permanent magnet particles 22 are preferably square, and their magnetic poles are arranged on two opposite faces. A plurality of permanent magnet particles 22 are arranged in sequence, being in close contact with each other or having a magnetic conductor gasket provided between adjacent permanent magnet particles 22. The shell 21 is sleeved outside the queue formed by the sequential arrangement of the permanent magnets.

[0050] Each magnetic strip 2 includes a middle section along its length direction and end sections provided on both sides of the middle section. The magnetic pole setting of the middle section determines the magnetic poles of the magnetic strip 2, while the setting of the end sections is used to optimize the magnetic induction line shape of the overall cathode magnetic bar. Preferably, the length of the middle section is five times or more that of the single-side end section.

[0051] Reference Figure 1 The cathode magnetic bars are divided into two types: SNNS magnetic bars 11 and NSSN magnetic bars 12. The first magnetic strip 23 and the fourth magnetic strip 26 of the SNNS magnetic bar 11 are S-pole magnetic strips, and the second magnetic strip 24 and the third magnetic strip 25 are N-pole magnetic strips; the first magnetic strip 23 and the fourth magnetic strip 26 of the NSSN magnetic bar 12 are N-pole magnetic strips, and the second magnetic strip 24 and the third magnetic strip 25 are S-pole magnetic strips. The SNNS magnetic bars 11 and the NSSN magnetic bars 12 are arranged alternately to form a closed magnetic field.

[0052] Specifically:

[0053] Reference Figure 5 In the SNNS magnetic bar 11, the magnetic induction lines of the first magnetic strip 23 and the fourth magnetic strip 26 face towards the inside of the target 3. That is, the S poles of all the permanent magnet particles 22 included in the first magnetic strip 23 and the fourth magnetic strip 26 face the substrate 4, while the N poles face away from the substrate 4. Alternatively, the magnetic induction lines of the first magnetic strip 23 and the fourth magnetic strip 26 face each other. That is, the two faces of the first magnetic strip 23 opposite to the fourth magnetic strip 26 are N poles, while the two faces facing away from each other are S poles.

[0054] The magnetic induction lines of the second magnetic strip 24 and the third magnetic strip 25 in the middle section face towards the outside of the target 3. That is, the N poles of all the permanent magnet particles 22 included in the second magnetic strip 24 and the third magnetic strip 25 face the substrate 4, while the S poles face away from the substrate 4.

[0055] The second magnetic stripe 24 is divided into two parts at the end segment, including a first part near the end face and a second part near the middle segment. The magnetic induction lines of the first part face the third magnetic stripe 25, and the magnetic induction lines of the second part face outside the target 3. That is, at the first part, the N pole of the permanent magnet particles 22 is close to the third magnetic stripe 25, and the S pole is close to the first magnetic stripe 23. While at the second part, the N pole of the permanent magnet particles 22 faces the substrate 4, and the S pole deviates from the substrate 4. At one end of the second magnetic stripe 24, the length of the first part is greater than that of the second part, and at the other end, the length of the first part is less than that of the second part. The actual setting is determined by the circulating direction of electrons. At the end where the carriers move towards the end face, the length of the first part is greater than that of the second part, and at the end where the carriers are far from the end face, the length of the first part is less than that of the second part.

[0056] The magnetic pole setting of the third magnetic stripe 25 is symmetrically distributed with respect to the center of the second magnetic stripe 24, and is used to form a closed internal magnetic field.

[0057] At both ends of the second magnetic stripe 24 and the third magnetic stripe 25, the magnetic induction lines face inside the target 3. That is, the S pole of the permanent magnet particles 22 faces the substrate 4, and the N pole deviates from the substrate 4.

[0058] Opposite to the SNNS magnetic rod 11:

[0059] Reference Figure 6 , in the NSSN magnetic rod 12, the magnetic induction lines of the first magnetic stripe 23 and the fourth magnetic stripe 26 face inside the target 3. That is, the N pole of all the permanent magnet particles 22 included in the first magnetic stripe 23 and the fourth magnetic stripe 26 faces the substrate 4, while the S pole deviates from the substrate 4. Or, the magnetic induction lines of the first magnetic stripe 23 and the fourth magnetic stripe 26 deviate from each other. That is, the two faces of the first magnetic stripe 23 opposite to the fourth magnetic stripe 26 are S poles, and the two faces facing away from each other are N poles.

[0060] The magnetic induction lines of the second magnetic stripe 24 and the third magnetic stripe 25 in the middle segment face inside the target 3. That is, the S pole of all the permanent magnet particles 22 included in the second magnetic stripe 24 and the third magnetic stripe 25 faces the substrate 4, while the N pole deviates from the substrate 4.

[0061] The second magnetic stripe 24 is divided into two parts at the end section, including a first part near the end face and a second part near the middle section. The magnetic induction lines of the first part deviate from the third magnetic stripe 25, and the magnetic induction lines of the second part face inside the target 3. That is, at the first part, the S pole of the permanent magnet particles 22 is close to the third magnetic stripe 25, and the N pole is close to the first magnetic stripe 23. While at the second part, the S pole of the permanent magnet particles 22 faces the substrate 4, and the N pole deviates from the substrate 4. At one end of the second magnetic stripe 24, the length of the first part is greater than that of the second part, and at the other end, the length of the first part is less than that of the second part. The actual setting is determined by the circulating direction of electrons. At the end where the carriers move towards the end face, the length of the first part is greater than that of the second part, and at the end where the carriers are far from the end face, the length of the first part is less than that of the second part.

[0062] The magnetic pole setting of the third magnetic stripe 25 is symmetrically distributed with respect to the center of the second magnetic stripe 24, and is used to form a closed internal magnetic field.

[0063] At both ends of the second magnetic stripe 24 and the third magnetic stripe 25, the magnetic induction lines face outside the target 3. That is, the N pole of the permanent magnet particles 22 faces the substrate 4, and the S pole deviates from the substrate 4.

[0064] The SNNS magnetic rods 11 and the NSSN magnetic rods 12 are arranged alternately. The magnetic stripe 2 on the adjacent side of the SNNS magnetic rod 11 and the NSSN magnetic rod 12 is an S-pole magnetic stripe, and the magnetic stripe 2 on the adjacent side of the NSSN magnetic rod 12 and the SNNS magnetic rod 11 is an N-pole magnetic stripe. The magnetic induction lines emerging from the N-pole magnetic stripe of the NSSN magnetic rod 12 are recycled by the S-pole magnetic stripe of the SNNS magnetic rod 11 to form a closed magnetic field.

[0065] The implementation principle of a PVD magnetron sputtering device for preventing substrate magnetization in an embodiment of the present application is as follows:

[0066] Within the same cathode magnetic rod, the magnetic field formed by the four magnetic stripes 2 affects the circulation of electrons, and the distribution of electrons is manifested as attracting high-energy argon particles in the external atmosphere. Under the combined action of the alternating electric field and the permanent magnet magnetic field, the high-energy argon particles approach the cathode magnetic rod and collide with the target 3 during flight. The bombardment causes the microparticles on the surface of the target 3 to break away from the original lattice and transfer to the surface of the substrate 4 to form a coating layer.

[0067] The speed of electrons circulating in the magnetic field is not constant. The speed is higher in the middle section, while in the end section, the electrons need to decelerate first and then accelerate in the reverse direction, so the speed is lower. This results in the residence time of electrons in the end section being much longer than that in the middle section. At the level of the cathode magnetic rod, high-energy argon particles will bombard the target 3 corresponding to the end section of the cathode magnetic rod more, causing the target 3 in the end section to be consumed quickly, while the target 3 in the middle section is consumed more slowly, which is the so-called end effect. On the one hand, this leads to the need to replace the target 3 when it is consumed in the end section, and the utilization rate of the middle section is low, increasing the production cost. On the other hand, the rapid consumption of the end section of the target 3 also results in the coating thickness near the end section of the substrate 4 being greater than that corresponding to the middle section, affecting the product quality.

[0068] Reference Figure 5 、 Figure 6 , in this embodiment, the magnetic induction lines of the first magnetic strip 23 and the fourth magnetic strip 26 are directed towards each other or away from each other, so that the carriers are always subjected to a deflecting force towards the opposite side during the circulation process; the setting of the second magnetic strip 24 in the first part of the end section complements that of the first magnetic strip 23, accelerating the turning of the carriers after they reach the end section; the same is true for the third magnetic strip 25, and the asymmetric setting of the lengths of the first part and the second part causes the carriers to be subjected to a greater deflecting force when moving towards the end face; the magnetic poles of the second magnetic strip 24 and the third magnetic strip 25 at both ends are reverse to those in the middle section, directly giving the carriers a positive driving force to promote the turning of the carriers reaching the end.

[0069] The above settings are all beneficial to the cyclic turning of the carriers, greatly reducing the residence time of the carriers in the end section in this embodiment, greatly reducing the high-energy argon particles bombarding both ends of the target 3, and alleviating the end effect.

[0070] In addition, for a single cathode magnetic rod, the magnetic induction lines generated by the magnetic strip 2 are closed magnetic induction lines in the shape of a quasi-ellipse. In the prior art, when the distances between multiple cathode magnetic rods are relatively far, the influence of the magnetic induction lines between different cathode magnetic rods can also be ignored. However, when the distances between adjacent cathode magnetic rods gradually approach, the magnetic induction lines of adjacent cathode magnetic rods interfere with each other, causing the shape of the magnetic induction lines to elongate towards the direction close to the substrate 4, and then causing the substrate 4 to be magnetized.

[0071] In actual production, the substrates 4 to be processed are often stacked. The magnetization of the substrate 4 will cause adhesion between the substrates 4, resulting in processing failures.

[0072] In this embodiment, the SNNS magnetic bars 11 and the NSSN magnetic bars 12 are arranged alternately. For two adjacent cathode magnetic bars, the magnetic strip 2 on the side of the SNNS magnetic bar 11 close to the NSSN magnetic bar 12 is an S-pole magnetic strip, and the magnetic strip 2 on the side of the NSSN magnetic bar 12 close to the SNNS magnetic bar 11 is an N-pole magnetic strip. The magnetic induction lines exiting from the N-pole magnetic strip of the NSSN magnetic bar 12 are recovered by the S-pole magnetic strip of the SNNS magnetic bar 11, and the magnetic induction lines no longer extend towards the substrate 4, thereby avoiding the occurrence of the phenomenon that the substrate 4 is magnetized.

[0073] The above are all the preferred embodiments of this application, and the protection scope of this application is not limited thereby. Therefore, all equivalent changes made according to the structure, shape, and principle of this application should be covered within the protection scope of this application.

Claims

1. A PVD magnetron sputtering device for preventing the magnetization of a substrate, characterized in that: It includes a plurality of cathode magnetic rods and targets (3) corresponding to the cathode magnetic rods one by one. The target (3) is a target material cylinder sleeved on the periphery of the cathode magnetic rod. The cathode magnetic rod includes at least three magnetic strips (2). The magnetic strips (2) are attached to the inner wall of the target (3) and are parallel and equal in length to the target (3). The magnetic poles of the magnetic strips (2) in each cathode magnetic rod are arranged in a mirror image, and the magnetic poles of the magnetic strips (2) in adjacent cathode magnetic rods are arranged in reverse. In each cathode magnetic rod, a first magnetic strip (23), a second magnetic strip (24), a third magnetic strip (25) and a fourth magnetic strip (26) are arranged in sequence. Each magnetic strip (2) includes an intermediate section in the axial direction and end sections distributed on both sides of the intermediate section. The cathode magnetic rod includes an SNNS magnetic rod (11) and an NSSN magnetic rod (12), and the SNNS magnetic rods (11) and NSSN magnetic rods (12) are arranged alternately. At the end section of the magnetic strip (2), For the SNNS magnetic rod (11), the magnetic induction lines of the first magnetic strip (23) and the fourth magnetic strip (26) face each other, and for the NSSN magnetic rod (12), the magnetic induction lines of the first magnetic strip (23) and the fourth magnetic strip (26) are opposite to each other. At the end section of the magnetic strip (2), the second magnetic strip (24) includes a first part close to the end face and a second part close to the intermediate section. For the SNNS magnetic rod (11), the magnetic induction lines of the first part face the third magnetic strip (25), and the magnetic induction lines of the second part face outside the target (3). At one end of the second magnetic strip (24), the length of the first part is greater than that of the second part, and at the other end, the length of the first part is less than that of the second part. For the NSSN magnetic rod (12), the magnetic induction lines of the first part are opposite to the third magnetic strip (25), and the magnetic induction lines of the second part face inside the target (3). At one end of the second magnetic strip (24), the length of the first part is greater than that of the second part, and at the other end, the length of the first part is less than that of the second part.

2. The PVD magnetron sputtering device for preventing the substrate from being magnetized according to claim 1, wherein: At the intermediate section of the magnetic strip (2), For the SNNS magnetic rod (11), the magnetic induction lines of the second magnetic strip (24) and the third magnetic strip (25) face outside the target (3), and the magnetic induction lines of the first magnetic strip (23) and the fourth magnetic strip (26) face inside the target (3). For the NSSN magnetic rod (12), the magnetic induction lines of the second magnetic strip (24) and the third magnetic strip (25) face inside the target (3), and the magnetic induction lines of the first magnetic strip (23) and the fourth magnetic strip (26) face outside the target (3).

3. The PVD magnetron sputtering equipment for preventing the substrate from being magnetized according to claim 1, characterized in that: At the intermediate section of the magnetic strip (2), For the SNNS magnetic rod (11), the magnetic induction lines of the second magnetic strip (24) and the third magnetic strip (25) face outside the target (3), and the magnetic induction lines of the first magnetic strip (23) and the fourth magnetic strip (26) face each other. The magnetic induction lines of the second magnetic strip (24) and the third magnetic strip (25) of the NSSN magnetic bar (12) face towards the inside of the target (3), and the magnetic induction lines of the first magnetic strip (23) and the fourth magnetic strip (26) are opposite to each other.

4. The PVD magnetron sputtering equipment for preventing the magnetization of the substrate according to claim 1, wherein: The third magnetic strip (25) is symmetrically distributed with the second magnetic strip (24) about the center to form a closed internal magnetic field.

5. The PVD magnetron sputtering device for preventing magnetization of a substrate according to claim 1, characterized in that: At both ends of the second magnetic strip (24) and the third magnetic strip (25) of the SNNS magnetic bar (11), the magnetic induction lines face towards the inside of the target (3); at both ends of the second magnetic strip (24) and the third magnetic strip (25) of the NSSN magnetic bar (12), the magnetic induction lines face towards the outside of the target (3).

6. The PVD magnetron sputtering device for preventing magnetization of a substrate according to claim 1, wherein: Each magnetic strip (2) comprises a plurality of permanent magnet particles (22) arranged in sequence and attached to each other.

7. The PVD magnetron sputtering device for preventing the magnetization of the substrate according to claim 1, wherein: The magnetic strips (2) are all located on one side of the arrangement axis of the cathode magnetic bar and are far from the arrangement axis.

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