Target poisoning resisting method and system based on multi-stage pulse reactive sputtering

Abstract

The invention provides a target poisoning resisting method and system based on multi-stage pulse reactive sputtering, and belongs to the technical field of magnetron sputtering. According to the method, air serves as reaction gas, a pulse direct-current power source is adopted, and reactive sputtering treatment is conducted on a metal target material; the reactive sputtering treatment comprises a first stage, a second stage and a sputtering voltage feedback control stage in sequence. The sputtering power and the duty ratio are adjusted in three stages, the first stage can stabilize luminance build-up and preliminarily clean the surface of the target material, and the second stage can improve the nitrogen ionization rate (gt; 50%) and suppresses the oxygen ionization rate (lt; and in the sputtering voltage feedback control stage, the sputtering power and the duty ratio are adjusted according to the drop amplitude of the sputtering voltage, an insulating compound layer on the surface of the target material can be efficiently sputtered and stripped, and the poisoning state of the target material is effectively inhibited, so that the method can effectively inhibit target material poisoning, the service life of the target material is prolonged, complex equipment is not needed, and the cost is relatively low.

Description

Technical Field

[0001] This invention relates to the field of magnetron sputtering technology, and in particular to a method and system for resisting target poisoning based on multi-stage pulse reactive sputtering. Background Technology

[0002] In traditional reactive sputtering processes, the reaction between metal targets (such as aluminum and titanium targets) and reactive gases (such as oxygen and nitrogen) easily forms an insulating compound layer on the target surface, resulting in target poisoning. This leads to a decrease in sputtering rate and a deterioration in process stability. Current methods to address target poisoning typically rely on intermediate frequency or radio frequency power supplies, or employ closed-loop gas flow control or plasma composition detection. However, these methods generally suffer from complex equipment and high costs. For example, using pure nitrogen or pure oxygen as the reactive gas requires a mixing and flow control system, and target poisoning remains difficult to suppress in DC sputtering mode. Summary of the Invention

[0003] The purpose of this invention is to provide a method and system for resisting target poisoning based on multi-stage pulse reactive sputtering. The method of this invention can effectively inhibit target poisoning, extend the service life of the target, and does not require complex equipment, thus having a low cost.

[0004] To achieve the above-mentioned objectives, the present invention provides the following technical solution: This invention provides a method for resisting target poisoning based on multi-stage pulsed reactive sputtering, comprising the following steps: Air is used as the reactant gas, and a pulsed DC power supply is used to perform reactive sputtering on a metal target; the metal target is a titanium target, aluminum target, copper target, chromium target, gold target, or platinum target; the reactive sputtering process includes a first stage, a second stage, and a sputtering voltage feedback control stage in sequence. The conditions for the first stage include: the sputtering power is 15-20% of the maximum power and the duty cycle is 50-70%; the maximum power is the maximum power of the pulsed DC power supply; The conditions for the second stage include: the sputtering power is 40-45% of the highest power and the duty cycle is 35-45%; The sputtering voltage feedback control stage includes: real-time monitoring of the sputtering voltage; when the sputtering voltage drop is less than 15% of the initial sputtering voltage, maintaining the sputtering power and duty cycle unchanged; when the sputtering voltage drop is greater than or equal to 15% of the initial sputtering voltage, adjusting the sputtering power to 80-100% of the maximum power and the duty cycle to 10-15%; continuing to monitor the sputtering voltage in real time; when the sputtering voltage recovers to ≥ 85% of the initial sputtering voltage, executing the conditions of the second stage; the initial sputtering voltage is the sputtering voltage at the start of the first stage.

[0005] Preferably, the time for the sputtering voltage to recover to ≥85% of the initial sputtering voltage is ≤5 minutes.

[0006] Preferably, the duration of the first stage is 1.5 to 2.5 minutes; the duration of the second stage is 2.5 to 3.5 minutes.

[0007] Preferably, the maximum power is 500W.

[0008] Preferably, the initial sputtering voltage is 400~600V.

[0009] Preferably, the air pressure during the reactive sputtering process is 0.4~0.6 Pa.

[0010] Preferably, when the sputtering voltage cannot be restored to ≥85% of the initial sputtering voltage within 5 minutes, the method further includes the following steps: stopping the reactive sputtering process and initiating target surface cleaning.

[0011] Preferably, the target surface cleaning method includes: bombarding the metal target with argon ions.

[0012] This invention provides a system for resisting target poisoning based on multi-stage pulsed reactive sputtering, comprising a reactive sputtering chamber, a gas supply module, a pulsed DC power supply, a monitoring module, and a staged control module. The gas supply module is connected to the reactive sputtering chamber, the pulsed DC power supply is connected to the reactive sputtering chamber, the monitoring module monitors the sputtering voltage of the reactive sputtering chamber, and the staged control module is signal-connected to the gas supply module, the pulsed DC power supply, and the monitoring module. The staged control module controls and adjusts the operating status of the gas supply module, the pulsed DC power supply, and the monitoring module.

[0013] Beneficial Effects: The anti-target poisoning method based on multi-stage pulse reactive sputtering provided by this invention uses air (a natural mixture of oxygen and nitrogen) as the single reactive gas to replace pure reactive gases (such as oxygen or nitrogen), reducing gas costs by more than 50% and eliminating the need for gas mixing or flow control devices, thus significantly simplifying the equipment structure. Simultaneously, the air can be directly introduced into the reactive sputtering system via a single path, suitable for the continuous production of oxide or nitride thin films on metal targets (such as aluminum and titanium targets). Furthermore, the natural mixing ratio of nitrogen and oxygen can be selectively ionized through subsequent optimization of pulse sputtering parameters. Specifically, this invention uses a pulsed DC power supply, adjusting the sputtering power and duty cycle in three stages. The first stage stabilizes ignition and initially cleans the target surface. The second stage increases the nitrogen ionization rate in the air (>50%) and suppresses the oxygen ionization rate (<10%). The sputtering voltage feedback control stage adjusts the sputtering power and duty cycle according to the sputtering voltage drop, enabling efficient sputtering and stripping of the insulating compound layer on the target surface, effectively suppressing target poisoning. Therefore, the method of the present invention can effectively suppress target poisoning and extend the service life of the target in DC sputtering mode, and does not require complex equipment, thus having a low cost.

[0014] Furthermore, the present invention relies on a single parameter, sputtering voltage, to achieve closed-loop control, resulting in a fast system response and high stability. In addition, the method of the present invention has good process compatibility and is suitable for retrofitting existing magnetron sputtering equipment, which can improve the utilization rate of metal targets by more than 30%.

[0015] The present invention provides a system for resisting target poisoning based on multi-stage pulsed reactive sputtering, comprising a reactive sputtering chamber, a gas supply module, a pulsed DC power supply, a monitoring module, and a staged control module. The gas supply module is connected to the reactive sputtering chamber, and the pulsed DC power supply is also connected to the reactive sputtering chamber. The monitoring module monitors the sputtering voltage of the reactive sputtering chamber. The staged control module is signal-connected to the gas supply module, the pulsed DC power supply, and the monitoring module, and controls and adjusts the operating status of these components. The system provided by this invention has a simple structure, facilitates effective suppression of target poisoning in DC sputtering mode through multi-stage pulsed sputtering parameter optimization, extends target lifespan, and has a low cost. Attached Figure Description

[0016] Figure 1 This is a logic diagram of the sputtering voltage feedback control stage in an embodiment of the present invention; Figure 2 This is a schematic diagram of the anti-target poisoning system based on multi-stage pulse reactive sputtering in an embodiment of the present invention; Figure 3 The XRD patterns of the targets after reactive sputtering treatment in Example 1 and Comparative Example 1 are shown. Figure 4 The graph shows the sputtering voltage changes during the reactive sputtering process in Example 1 and Comparative Example 1. Figure 5 The graph shows the sputtering voltage changes during the reactive sputtering process in Example 1 and Comparative Example 2. Detailed Implementation

[0017] This invention provides a method for resisting target poisoning based on multi-stage pulsed reactive sputtering, comprising the following steps: Air is used as the reactant gas, and a pulsed DC power supply is used to perform reactive sputtering on a metal target; the metal target is a titanium target, aluminum target, copper target, chromium target, gold target, or platinum target; the reactive sputtering process includes a first stage, a second stage, and a sputtering voltage feedback control stage in sequence. The conditions for the first stage include: the sputtering power is 15-20% of the maximum power and the duty cycle is 50-70%; the maximum power is the maximum power of the pulsed DC power supply; The conditions for the second stage include: the sputtering power is 40-45% of the highest power and the duty cycle is 35-45%; The sputtering voltage feedback control stage includes: real-time monitoring of the sputtering voltage; when the sputtering voltage drop is less than 15% of the initial sputtering voltage, maintaining the sputtering power and duty cycle unchanged; when the sputtering voltage drop is greater than or equal to 15% of the initial sputtering voltage, adjusting the sputtering power to 80-100% of the maximum power and the duty cycle to 10-15%; continuing to monitor the sputtering voltage in real time; when the sputtering voltage recovers to ≥ 85% of the initial sputtering voltage, executing the conditions of the second stage; the initial sputtering voltage is the sputtering voltage at the start of the first stage.

[0018] Traditional reactive sputtering processes are prone to target poisoning, which leads to a significant drop in sputtering voltage (typically from the initial sputtering voltage to below the threshold sputtering voltage that marks the onset of target poisoning). This invention uses air as the reactive gas and applies the output power of a pulsed DC power supply in stages. Through multi-stage pulsed sputtering parameter optimization and further combined with real-time feedback control of the sputtering voltage, the target is controlled to escape the poisoned state, effectively solving the problems of target poisoning and sputtering rate reduction in metal targets during reactive sputtering. The method of this invention is described in detail below.

[0019] This invention uses air as the reactant gas, specifically air as the sole reactant gas, that is, only air is used as the reactant gas.

[0020] This invention employs a pulsed DC power supply, specifically a pulsed DC power supply with an adjustable duty cycle and a maximum power of 500W. Combined with a staged and sputtering voltage feedback control modulation method, reactive sputtering treatment is performed on metal targets. The gradually increasing sputtering power in stages can reduce the negative impact on the sputtering target, while the staged adjustment of the duty cycle helps to improve the ionization rate of the reactive gas and reduce the degree of poisoning of the sputtering target.

[0021] In one embodiment of the present invention, the air pressure during the reactive sputtering process can be 0.4~0.6 Pa, specifically 0.4 Pa, 0.45 Pa, 0.5 Pa, 0.55 Pa, or 0.6 Pa. The reactive sputtering process of the present invention includes a first stage, a second stage, and a sputtering voltage feedback control stage performed sequentially, which will be described in detail below.

[0022] In this invention, the conditions for the first stage include: a sputtering power of 15-20% of the highest power, specifically 15%, 16%, 17%, 18%, 19%, or 20%, and a duty cycle of 50-70%, specifically 50%, 55%, 60%, 65%, or 70%. As one embodiment of this invention, the duration of the first stage can be 1.5-2.5 minutes, specifically 1.5 minutes, 1.8 minutes, 2 minutes, 2.2 minutes, or 2.5 minutes. By limiting the conditions of the first stage within the above range, this invention can stably ignite and initially clean the target surface.

[0023] In this invention, the conditions for the second stage include: a sputtering power of 40-45% of the highest power, specifically 40%, 41%, 42%, 43%, 44%, or 45%, and a duty cycle of 35-45%, specifically 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, or 45%. As one embodiment of this invention, the duration of the second stage can be 2.5-3.5 minutes, specifically 2.5 minutes, 2.8 minutes, 3 minutes, 3.2 minutes, or 3.5 minutes. By limiting the conditions of the second stage within the above range, this invention can increase the nitrogen ionization rate in the air (>50%) and suppress the oxygen ionization rate (<10%).

[0024] In this invention, the sputtering voltage feedback control stage includes: real-time monitoring of the sputtering voltage; when the sputtering voltage drop is less than 15% of the initial sputtering voltage, maintaining the sputtering power and duty cycle unchanged; when the sputtering voltage drop is greater than or equal to 15% of the initial sputtering voltage, adjusting the sputtering power to 80-100% of the maximum power and the duty cycle to 10-15%; continuing to monitor the sputtering voltage in real time; when the sputtering voltage recovers to ≥ 85% of the initial sputtering voltage, executing the conditions of the second stage; the initial sputtering voltage is the sputtering voltage at the start of the first stage. In one embodiment of the present invention, when the sputtering voltage drop is greater than or equal to 15% of the initial sputtering voltage, the sputtering power is adjusted to 80-100% of the maximum power, specifically 80%, 81%, 82%, 83%, 84%, 85%, 86%, 87%, 88%, 89%, 90%, 91%, 92%, 93%, 94%, 95%, 96%, 97%, 98%, 99%, or 100%; and the duty cycle is adjusted to 10-15%, specifically 10%, 11%, 12%, 13%, 14%, or 15%. That is, in the sputtering voltage feedback control stage of the present invention, when the sputtering voltage drop is greater than or equal to 15% of the initial sputtering voltage, it is necessary to increase the sputtering power and decrease the duty cycle.

[0025] In one embodiment of the present invention, the sputtering power in the sputtering voltage feedback control stage is adjusted according to Equation 1: A = 0.7 + 0.6x - 0.3x 2 Formula 1; In Equation 1, A represents the proportion of sputtering power to the highest power, and x represents the decrease in sputtering voltage.

[0026] According to Equation 1, under extreme conditions, such as when the sputtering voltage drops by 100%, the corresponding percentage of sputtering power to the maximum power also reaches 100%.

[0027] In one embodiment of the present invention, the duty cycle in the sputtering voltage feedback control stage is adjusted according to Equation 2: B = 0.09 + 0.05x (Equation 2); In Equation 2, B represents the duty cycle, and x represents the drop in sputtering voltage.

[0028] According to Equation 2, under extreme conditions, such as when the sputtering voltage drops by 100%, the corresponding duty cycle reaches 15%.

[0029] The present invention employs the above-described method for the sputtering voltage feedback control stage, enabling efficient sputtering and stripping of the insulating compound layer on the target surface. In one embodiment of the present invention, the time for the sputtering voltage to recover to ≥85% of the initial sputtering voltage is ≤5 min, for example, it can be 3 min, 3.5 min, 4 min, 4.5 min, or 5 min. In another embodiment of the present invention, the reactive sputtering deposition rate in the sputtering voltage feedback control stage can be 9~11 nm / min, specifically 9 nm / min, 9.5 nm / min, 10 nm / min, 10.5 nm / min, or 11 nm / min.

[0030] In one embodiment of the present invention, the initial sputtering voltage can be 400~600V, specifically 400V, 450V, 500V, 550V or 600V.

[0031] As one embodiment of the present invention, when the sputtering voltage cannot be restored to ≥85% of the initial sputtering voltage within 5 minutes, the following steps are also included: stopping the reactive sputtering process and starting target surface cleaning; the target surface cleaning method may include: bombarding the metal target with argon ions; the present invention does not have any special limitations on the specific conditions for bombarding the metal target with argon ions, and conditions well known to those skilled in the art can be used.

[0032] Figure 1 The following is a logic diagram of the sputtering voltage feedback control stage in an embodiment of the present invention. Specifically, after the second stage is completed, the sputtering voltage is monitored in real time. When the sputtering voltage drop is less than 15% of the initial sputtering voltage, the sputtering power and duty cycle remain unchanged. When the sputtering voltage drop is greater than or equal to 15% of the initial sputtering voltage, the sputtering power is adjusted to 80-100% of the maximum power and the duty cycle is 10-15%. The sputtering voltage is monitored in real time. When the sputtering voltage recovers to ≥ 85% of the initial sputtering voltage, the sputtering power is adjusted to 40-45% of the maximum power and the duty cycle is 35-45% (i.e., the conditions for executing the second stage are met). When the sputtering voltage cannot recover to ≥ 85% of the initial sputtering voltage, the reactive sputtering process is stopped and the target surface cleaning is initiated.

[0033] This invention provides a system for resisting target poisoning based on multi-stage pulsed reactive sputtering, comprising a reactive sputtering chamber, a gas supply module, a pulsed DC power supply, a monitoring module, and a staged control module. The gas supply module is connected to the reactive sputtering chamber, the pulsed DC power supply is connected to the reactive sputtering chamber, the monitoring module monitors the sputtering voltage of the reactive sputtering chamber, and the staged control module is signal-connected to the gas supply module, the pulsed DC power supply, and the monitoring module. The staged control module controls and adjusts the operating status of the gas supply module, the pulsed DC power supply, and the monitoring module.

[0034] Figure 2 This is a schematic diagram of the structure of a system for resisting target poisoning based on multi-stage pulsed reactive sputtering in an embodiment of the present invention. The reactive sputtering cavity is used for reactive sputtering processing; the gas supply module is used to provide reactive gas and working gas; the maximum power of the pulsed DC power supply is 500W; the monitoring module is used to monitor the sputtering voltage of the reactive sputtering cavity; the staged control module is used to coordinate and dynamically regulate the duty cycle and sputtering power of different stages in the reactive sputtering process. The staged control module achieves dynamic regulation of the duty cycle by issuing a duty cycle regulation command to the gas supply module, and achieves dynamic regulation of the sputtering power by issuing a sputtering power regulation command to the pulsed DC power supply.

[0035] The technical solutions of this invention will be clearly and completely described below with reference to the embodiments thereof. Obviously, the described embodiments are only a part of the embodiments of this invention, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0036] Example 1 This embodiment uses reactive sputtering to prepare alumina thin films. The target material is an aluminum target, the reactive gas is air, and the air is directly introduced into the reactive sputtering system (reactive sputtering cavity) through a single path. The power supply is a pulsed DC power supply (maximum power 500W), whose output power is applied in stages. The preparation method of the alumina thin film includes the following steps: An aluminum target is installed inside the reactive sputtering chamber. Air is introduced into the chamber to maintain an air pressure of 0.5 Pa. No active flow control is implemented. A pulsed DC power supply is activated for reactive sputtering. During the reactive sputtering process, the initial sputtering voltage is set to 600V, and the threshold sputtering voltage is set to 510V (a 15% decrease compared to the initial sputtering voltage). The reactive sputtering process includes a first stage, a second stage, and a sputtering voltage feedback control stage performed sequentially. The conditions for the first stage include: sputtering power of 15% (75W) of the maximum power and duty cycle of 60%, with a duration of 2 minutes; The conditions for the second stage include: sputtering power of 40% of the maximum power (200W) and duty cycle of 40%, with a duration of 3 minutes; The sputtering voltage feedback control stage includes: maintaining the conditions of the second stage to continue sputtering and monitoring the sputtering voltage in real time; when the sputtering voltage drops to 510V (i.e., a 15% decrease compared to the initial sputtering voltage), adjusting the current sputtering power to 80% of the maximum power (400W) and the duty cycle to 10%, continuously monitoring the sputtering voltage in real time; if the sputtering voltage recovers to 510V within 5 minutes (i.e., recovers to 85% of the initial sputtering voltage), reducing the sputtering power to 40% of the maximum power (200W) and adjusting the duty cycle to 40%, i.e., executing the conditions of the second stage; if the sputtering voltage does not recover to 510V within 5 minutes, pausing sputtering and initiating target surface cleaning (specifically, using argon ion bombardment of the metal target to achieve surface cleaning). After the reactive sputtering process is completed, the film is cleaned and sampled to obtain the alumina film.

[0037] Comparative Example 1 The procedure was performed in accordance with the method of Example 1, except that the reaction gas used in this comparative example was pure oxygen, the duty cycle was set to 30%, the sputtering power was 500W, the gas pressure in the reaction sputtering chamber was 0.6Pa, and the sputtering duration was 10min.

[0038] Comparative Example 2 The method is operated in accordance with Example 1, except that the sputtering voltage feedback control stage is not performed in this comparative example, and the duration of the second stage is 8 minutes.

[0039] Test Example 1 XRD was used to analyze the reactive sputtering targets in Example 1 and Comparative Example 1. The intensity of the spectral lines indicating elemental aluminum and alumina components allowed for a semi-quantitative analysis of the alumina film sample composition. Sampling was performed 10 minutes after sputtering began (to ensure the sputtering process reached a stable state under the method of this invention). When target poisoning occurs during sputtering, some of the elemental aluminum in the target will be converted to alumina, resulting in a decrease in the intensity ratio of the corresponding spectral lines for elemental aluminum and alumina in the XRD analysis results. This indicates a decrease in the content of elemental aluminum and a relative increase in the content of alumina. Figure 3The XRD patterns are shown for the targets after reactive sputtering treatment in Example 1 and Comparative Example 1. The results show that the ratio of the intensity of elemental aluminum to alumina spectral lines on the target after reactive sputtering treatment in Example 1 (approximately 13 / 4) is greater than that in Comparative Example 1 after reactive sputtering with pure oxygen (approximately 9 / 5). Preliminary calculations based on the XRD data indicate that the formation rate of the insulating compound layer on the target surface in Example 1 is reduced by 45% compared to pure oxygen sputtering in Comparative Example 1. This suggests that the target was more severely poisoned during pure oxygen reactive sputtering in Comparative Example 1, with a greater amount of elemental aluminum converting to alumina. In contrast, the alumina content formed on the target surface in Example 1 is lower, and elemental aluminum is retained to a greater extent, proving that the method of this invention can effectively inhibit target poisoning.

[0040] Figure 4 The graphs show the sputtering voltage changes during the reactive sputtering process in Example 1 and Comparative Example 1. The results show that in Comparative Example 1, the target became poisoned 4-5 minutes after sputtering began, resulting in a significant drop in sputtering voltage. In contrast, the method in Example 1, by suppressing alumina formation, reached a relatively stable state 5 minutes after sputtering began, with sputtering voltage stability more than 1.5 times that of the pure oxygen reactive sputtering mode during the same period. Furthermore, tests showed that within the stable range of 5-10 minutes, the method in Example 1 could stabilize the reactive sputtering deposition rate at 10 nm / min ± 0.5 nm / min, indicating that the sputtering rate stability in Example 1 is more than 1.5 times that of the pure oxygen reactive sputtering mode in Comparative Example 1. In addition, the alumina film prepared using the method of Example 1 of this invention exhibits good uniformity with a thickness deviation ≤ 5%.

[0041] Test Example 2 Figure 5 The graphs show the sputtering voltage changes during the reaction sputtering process in Example 1 and Comparative Example 2. The time it takes for the sputtering voltage to drop to the same range in Example 1 and Comparative Example 2 are compared. The results show that the sputtering voltage feedback control stage in Example 1 of the present invention can extend the target poisoning time by more than 1.5 times. This can effectively reduce the process interruption rate in actual industrial production, thereby reducing production costs and improving production efficiency.

[0042] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for resisting target poisoning based on multi-stage pulse reactive sputtering, characterized in that, Includes the following steps: Air is used as the reactant gas, and a pulsed DC power supply is used to perform reactive sputtering on a metal target; the metal target is a titanium target, aluminum target, copper target, chromium target, gold target, or platinum target; the reactive sputtering process includes a first stage, a second stage, and a sputtering voltage feedback control stage in sequence. The conditions for the first stage include: the sputtering power is 15-20% of the maximum power and the duty cycle is 50-70%; the maximum power is the maximum power of the pulsed DC power supply; The conditions for the second stage include: the sputtering power is 40-45% of the highest power and the duty cycle is 35-45%; The sputtering voltage feedback control stage includes: real-time monitoring of the sputtering voltage; when the sputtering voltage drop is less than 15% of the initial sputtering voltage, maintaining the sputtering power and duty cycle unchanged; when the sputtering voltage drop is greater than or equal to 15% of the initial sputtering voltage, adjusting the sputtering power to 80-100% of the maximum power and the duty cycle to 10-15%; continuing to monitor the sputtering voltage in real time; when the sputtering voltage recovers to ≥ 85% of the initial sputtering voltage, executing the conditions of the second stage; the initial sputtering voltage is the sputtering voltage at the start of the first stage.

2. The method for preventing target poisoning according to claim 1, characterized in that, The time required for the sputtering voltage to recover to ≥85% of the initial sputtering voltage is ≤5 minutes.

3. The method for preventing target poisoning according to claim 1, characterized in that, The duration of the first stage is 1.5 to 2.5 minutes; the duration of the second stage is 2.5 to 3.5 minutes.

4. The method for preventing target poisoning according to claim 1, characterized in that, The maximum power is 500W.

5. The method for preventing target poisoning according to claim 1, characterized in that, The initial sputtering voltage is 400~600V.

6. The method for preventing target poisoning according to claim 1, characterized in that, The air pressure during the reactive sputtering process is 0.4~0.6 Pa.

7. The method for preventing target poisoning according to any one of claims 2 to 6, characterized in that, When the sputtering voltage cannot be restored to ≥85% of the initial sputtering voltage within 5 minutes, the following steps are also included: stopping the reactive sputtering process and initiating target surface cleaning.

8. The method for preventing target poisoning according to claim 7, characterized in that, The target surface cleaning method includes: bombarding the metal target with argon ions.

9. A system for resisting target poisoning based on multi-stage pulse reactive sputtering, characterized in that, The device includes a reactive sputtering chamber, a gas supply module, a pulsed DC power supply, a monitoring module, and a staged control module. The gas supply module is connected to the reactive sputtering chamber, the pulsed DC power supply is connected to the reactive sputtering chamber, the monitoring module monitors the sputtering voltage of the reactive sputtering chamber, and the staged control module is signal-connected to the gas supply module, the pulsed DC power supply, and the monitoring module. The staged control module controls and adjusts the operating status of the gas supply module, the pulsed DC power supply, and the monitoring module.

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