Integrated Packaging Structure and Method of Power Module

Abstract

This invention provides an integrated packaging structure and method for a power module, including a metal core substrate, a molding compound, a semiconductor IC, and a circuit layer substrate. The metal core substrate includes a metal base and a resin insulating layer. The semiconductor IC includes a power IC and a non-power IC located on the upper and lower sides of the circuit layer substrate, respectively. Both the power IC and the non-power IC are electrically connected to the circuit layer substrate. A first conductive via is provided inside the resin insulating layer, and a first electrode plate and a second electrode plate are respectively provided at both ends of the first conductive via. Both the first electrode plate and the second electrode plate are embedded in the resin insulating layer, with one side of the first electrode plate exposed externally and one side of the second electrode plate exposed in the enclosed space. The second electrode plate is electrically connected to the circuit layer substrate. This invention enhances the mechanical reliability of the power connection while eliminating external pins of the electronic package, which is beneficial to the integrated development of packaging.

Description

[Technical Field]

[0001] This invention relates to an integrated packaging structure for a power module and its integrated packaging method. [Background Technology]

[0002] Hybrid integrated circuits, with their significant advantages such as high density, high performance, high reliability, light weight, and small size, and their crucial role in overall systems, are widely used in the four major fields of land, sea, air, and space, covering electronic systems such as aerospace, aviation, and shipbuilding communications and computers. The current state of domestic power integrated circuits can no longer meet the demands of modern hybrid integrated circuits for high power, high reliability, high density, miniaturization, low cost, and system integration. [Summary of the Invention]

[0003] The purpose of this invention is to provide an integrated packaging structure for power modules and a testing method thereof. This invention enhances the mechanical reliability of power connections while eliminating external pins in electronic packaging, greatly reducing the packaging height and facilitating the integrated development of packaging.

[0004] To achieve one of the above-mentioned objectives, the present invention provides an integrated packaging structure for a power module. The integrated packaging structure includes a metal core substrate, a molding compound forming a closed space with the metal core substrate, a semiconductor IC, and a circuit layer substrate all located within the closed space. The metal core substrate includes a metal base and a resin insulating layer surrounding a portion of the outer periphery of the metal base. The semiconductor IC includes a power IC and a non-power IC located on the upper and lower sides of the circuit layer substrate, respectively. The power IC is disposed on the metal base, and both the power IC and the non-power IC are electrically connected to the circuit layer substrate. A first conductive via is provided inside the resin insulating layer. A first electrode is provided at one end of the first conductive via, and a second electrode is provided at the other end of the first conductive via. Both the first and second electrode are embedded in the resin insulating layer, with one side of the first electrode exposed externally and one side of the second electrode exposed within the closed space. The second electrode is electrically connected to the circuit layer substrate.

[0005] As a further improvement of one embodiment of the present invention, the resin insulating layer includes a ply layer surrounding a portion of the outer periphery of the metal substrate, a first step layer disposed above the ply layer, and a second step layer disposed above the first step layer, wherein the inner periphery of the first step layer is smaller than the inner periphery of the second step layer.

[0006] As a further improvement of one embodiment of the present invention, the first conductive via includes a first portion disposed within the ply layer and a second portion disposed within the first stepped layer.

[0007] As a further improvement of one embodiment of the present invention, the tiling layer forms an enclosing space, the metal substrate includes a body located in the enclosing space and a plurality of protrusions extending from the body into the enclosed space, and the power IC is located on the plurality of protrusions.

[0008] As a further improvement of one embodiment of the present invention, the integrated packaging structure further includes a plurality of flexible pads at both ends of which respectively abut against the resin insulating layer and the circuit layer substrate, and the flexible pads are spaced apart from the power IC. The circuit layer substrate is disposed on the resin insulating layer through the flexible pads to form upper and lower packaging layers.

[0009] As a further improvement of one embodiment of the present invention, a second conductive via is provided on the circuit layer substrate to construct the internal power circuit of the upper and lower encapsulation layers.

[0010] As a further improvement of one embodiment of the present invention, the metal substrate is a ceramic particle reinforced metal matrix composite material.

[0011] As a further improvement of one embodiment of the present invention, the resin insulating layer is made of ceramic powder reinforced epoxy resin material.

[0012] As a further improvement of one embodiment of the present invention, the integrated packaging structure further includes a metal layer in contact with the non-power IC, a heat sink in contact with the metal layer and exposed to the outside, and a heat dissipation pad in contact with the metal substrate and exposed to the outside, wherein one side of the heat sink abuts against the resin insulating layer, and the outer periphery of the heat dissipation pad abuts against the resin insulating layer.

[0013] To achieve the other objective mentioned above, the present invention also provides an integrated packaging method for a power module, wherein the integrated packaging method includes the following steps:

[0014] S101: A portion of the metal substrate is encased in a resin insulating layer;

[0015] S102: The first conductive via is formed within the resin insulating layer;

[0016] S103: Embed a first electrode sheet and a second electrode sheet in the resin insulating layer, and the first electrode sheet and the second electrode sheet are located at both ends of the first conductive through hole;

[0017] S104: Mount the power IC onto the metal substrate;

[0018] S105: Mount the circuit layer substrate onto the resin insulating layer, and electrically connect the circuit layer substrate to the power IC, and electrically connect the circuit layer substrate to the second electrode sheet;

[0019] S106: Install a non-power IC on top of the circuit layer substrate, and make the circuit layer substrate electrically connected to the non-power IC;

[0020] S107: Prepare a molding layer so that the molding layer, the metal substrate, and the resin insulating layer form a closed space.

[0021] As a further improvement of one embodiment of the present invention, the first electrode sheet and the second electrode sheet are embedded in the resin insulating layer by an etching process, and the first conductive via is formed by a deposition and pitting etching process.

[0022] Compared with the prior art, the present invention has the following beneficial effects: by setting a first conductive through hole inside the resin insulating layer, and embedding both the first electrode sheet and the second electrode sheet into the resin insulating layer, with one side of the first electrode sheet exposed to the outside and one side of the second electrode sheet exposed in the enclosed space, this arrangement not only enhances the mechanical reliability of the power connection, but also eliminates the external pins of the electronic package, greatly reducing the package height and facilitating the integrated development of the package. [Attached Image Description]

[0023] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Wherein:

[0024] Figure 1 This is a schematic diagram of the integrated packaging structure of the power module provided in a specific embodiment of this application.

[0025] Figure 2 yes Figure 1 A schematic diagram of the metal substrate in the integrated packaging structure of a medium-power module.

[0026] Figure 3 yes Figure 1 A schematic diagram of the metal substrate and resin insulating layer in the integrated packaging structure of a medium-power module.

[0027] Figure 4 yes Figure 1 A schematic diagram of the metal substrate, resin insulating layer, flexible pad, and circuit layer substrate in the integrated packaging structure of a medium-power module.

[0028] Figure 5 This is a flowchart of the integrated packaging method for a power module provided in a specific embodiment of this application.

Detailed Implementation Methods

[0029] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, it should be noted that, for ease of description, only the parts relevant to this application are shown in the accompanying drawings, not the entire structure. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of this application.

[0030] The terms “comprising” and “having”, and any variations thereof, used in this application are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not limited to the steps or units listed, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to such process, method, product, or apparatus.

[0031] It should be noted that when a component is said to be "fixed to" another component, it can be directly attached to the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0032] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein in the specification of this invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0033] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0034] Please see Figures 1 to 5As shown in the specific embodiment of the present invention, this embodiment provides an integrated packaging structure for a power module. The integrated packaging structure includes a metal core substrate, a molding compound 20 forming a closed space with the metal core substrate, a semiconductor IC and a circuit layer substrate 10 both located within the closed space. The metal core substrate includes a metal base 1 and a resin insulating layer surrounding a portion of the outer periphery of the metal base 1. The semiconductor IC includes a power IC 13 and a non-power IC 12 located on the upper and lower sides of the circuit layer substrate 10, respectively. The power IC 13 is disposed on the metal base 1, and both the power IC 13 and the non-power IC 12 are electrically connected to the circuit layer substrate 10. A first conductive via 7 is provided inside the resin insulating layer. A first electrode plate 81 is provided at one end of the first conductive via 7, and a second electrode plate 82 is provided at the other end of the first conductive via 7. Both the first electrode plate 81 and the second electrode plate 82 are embedded in the resin insulating layer, with one side of the first electrode plate 81 exposed to the outside and one side of the second electrode plate 82 exposed in the closed space. The second electrode plate 82 is electrically connected to the circuit layer substrate 10.

[0035] In this preferred embodiment, by providing a first conductive through-hole 7 inside the resin insulating layer, and embedding both the first electrode plate 81 and the second electrode plate 82 into the resin insulating layer, with one side of the first electrode plate 81 exposed to the outside and one side of the second electrode plate 82 exposed in the enclosed space, this arrangement not only enhances the mechanical reliability of the power connection, but also eliminates the external pins of the electronic package, greatly reducing the package height and facilitating the integrated development of the package.

[0036] Furthermore, the resin insulating layer includes a ply layer 4 surrounding a portion of the outer periphery of the metal substrate 1, a first step layer 5 disposed above the ply layer 4, and a second step layer 6 disposed above the first step layer 5, wherein the inner periphery of the first step layer 5 is smaller than the inner periphery of the second step layer 6.

[0037] The first conductive via 7 includes a first portion disposed within the paving layer 4 and a second portion disposed within the first stepped layer 5.

[0038] The tiling layer 4 forms an enclosing space, and the metal substrate 1 includes a body located in the enclosing space and a number of protrusions 2 extending from the body into the enclosed space. The power IC 13 is located on the number of protrusions 2.

[0039] The integrated packaging structure also includes several flexible pads 9 at both ends that abut against the resin insulating layer and the circuit layer substrate 10, respectively, and the flexible pads 9 are spaced apart from the power IC 13. The circuit layer substrate 10 is disposed on the resin insulating layer through the flexible pads 9 to form upper and lower packaging layers.

[0040] A second conductive via 11 is provided on the circuit layer substrate 10 to construct the internal power circuit of the upper and lower encapsulation layers.

[0041] Preferably, the metal substrate 1 is made of ceramic particle-reinforced metal matrix composite material. Specifically, in this embodiment, the metal substrate 1 is made of copper diamond. Of course, the metal substrate 1 can also be made of other materials.

[0042] The resin insulation layer is made of ceramic powder reinforced epoxy resin material. Specifically, in this embodiment, the resin insulation layer uses aluminum nitride, which has good thermal conductivity and good insulation properties. Of course, the resin insulation layer can also be made of other materials such as ceramic powder reinforced epoxy resin.

[0043] The integrated package structure also includes a metal layer 19 in contact with the non-power IC12, a heat sink 21 in contact with the metal layer 19 and exposed to the outside, and a heat dissipation pad 3 in contact with the metal substrate 1 and exposed to the outside. One side of the heat sink 21 abuts against the resin insulating layer, and the outer periphery of the heat dissipation pad 3 abuts against the resin insulating layer.

[0044] Preferably, the heat dissipation pad 3 is made of copper or tin. The first electrode plate 81 and the second electrode plate 82 are made of copper.

[0045] A heat dissipation pad 3 is thermally fused to the side of the metal substrate 1 without the boss 2. A resin insulating layer is prepared in the order of "layout layer 4 - first step layer 5 - second step layer 6". A first conductive via 7 is provided inside the layout layer 4 and the first step layer 5 of the resin insulating layer. The layout layer 4 of the resin insulating layer covers the body of the metal substrate 1, exposing the bottom surface of the boss 2 and the heat dissipation pad 3. A first electrode 81 is embedded in the bottom surface of the layout layer 4, and a second electrode 82 is embedded around the upper surface of the first step layer 5, matching the position of the first conductive via 7. In addition, the surfaces of the heat dissipation pad 3 and the first electrode 81 exposed to the air are tin-plated. A flexible pad 9 is placed on the upper surface of the layout layer 4, and a welding process is used to fix the circuit layer substrate 10 on the flexible pad 9, dividing the space into upper and lower encapsulation layers. A second conductive via 11 is provided inside the circuit layer substrate 10. Structure: Power IC13 is mounted on boss 2 via solder layer 14. A first set of conductive pillars 15 and a first set of solder balls 16 are also prepared on its active surface. It is then soldered to the bottom surface of circuit layer substrate 10. Finally, the electrical connection is sealed with a first filler layer 17. Non-power IC12 is flip-chip mounted on circuit layer substrate 10 via a second set of conductive pillars 22 and a second set of solder balls 23. The electrical connection is then sealed with a second filler layer 24. Circuit layer substrate 10 is bonded to second electrode sheet 82 via aluminum wire 18. Metal layer 19 is prepared on the passive surface of non-power IC12. Molding layer 20 is connected to the top surface of ply layer 4, the first step layer 5 and the second step layer 6 around the perimeter to form a hermetically sealed package. Molding layer 20 is ground until the upper surface of metal layer 19 is exposed. A hot-press fusion process is used to connect heat sink 21 to metal layer 19 to establish a heat dissipation channel.

[0046] The present invention also provides an integrated packaging method for a power module, wherein the integrated packaging method includes the following steps:

[0047] S101: A portion of the metal substrate 1 is wrapped with a resin insulating layer;

[0048] S102: The first conductive through-hole 7 is prepared in the resin insulating layer;

[0049] S103: The first electrode sheet 81 and the second electrode sheet 82 are embedded in the resin insulating layer, and the first electrode sheet 81 and the second electrode sheet 82 are located at both ends of the first conductive through hole 7.

[0050] S104: Mount the power IC13 onto the metal substrate 1;

[0051] S105: The circuit layer substrate 10 is mounted on the resin insulating layer, and the circuit layer substrate 10 is electrically connected to the power IC 13, and the circuit layer substrate 10 is electrically connected to the second electrode sheet 82.

[0052] S106: Mount the non-power IC12 above the circuit layer substrate 10, and make the circuit layer substrate 10 electrically connected to the non-power IC12.

[0053] S107: Prepare molding layer 20 so that molding layer 20, metal substrate and resin insulating layer form a closed space.

[0054] Specifically, in this embodiment, the first electrode sheet 81 and the second electrode sheet 82 are embedded in the resin insulating layer by an etching process, and the first conductive via 7 is formed by a deposition and pitting etching process.

[0055] After step S101, the heat dissipation pad 3 is thermally fused to the side of the metal substrate 1 without the protrusion 2. The resin insulating layer 4 wraps around the metal substrate. The circuit layer substrate 10 is placed on the upper surface of the layer 4 by a flexible pad 9.

[0056] In step S101, a boss 2 is prepared on the metal substrate 1. Specifically, the boss 2 is prepared by cutting and die casting the metal substrate 1. The boss 2 is disposed on the top surface of the metal substrate 1 and has a cuboid structure. Multiple bosses are provided.

[0057] The resin insulation layer consists of a flat layer 4, a first step layer 5, and a second step layer 6 arranged sequentially from bottom to top. The outer surfaces of the flat layer 4, the first step layer 5, and the second step layer 6 are coplanar.

[0058] The structure of the first conductive through hole 77 is prepared inside the flat layer 4 and the first step layer 5, and the first conductive through hole 77 is located around the resin insulating layer.

[0059] When the heat dissipation pad 3 is thermally fused with the side of the substrate 1 without the protrusion 2, the specific process is as follows:

[0060] One side of the heat dissipation pad 3 is ground to obtain the first metal mirror;

[0061] The side of the metal substrate without protrusion 2 is ground to obtain a second metal mirror;

[0062] The first and second metal mirrors are fused together by hot pressing.

[0063] In the process of the resin insulating layer 4 covering the metal substrate 1, specifically: the resin insulating layer 4 is prepared and covers the substrate 1 by injection molding, dispensing and other processes, and the whole is ground to expose the bottom surface of the boss 2 and the heat dissipation pad 3.

[0064] In step S103, the first electrode sheet 81 and the second electrode sheet 82 are respectively embedded on the surface of the ply layer 4 and the first step layer 5. Specifically, the first electrode sheet 81 and the second electrode sheet 82 are embedded around the lower surface of the ply layer 4 and the upper surface of the first step layer 5 by etching process, and the surfaces of the two are made flush by designing the size of the electrode sheet 8 and grinding the surface of the ply layer 4 of the resin insulating layer.

[0065] The packaging method also includes surface treatment of the heat dissipation pad 3 and the first electrode sheet 81, specifically: the heat dissipation pad 3 and the first electrode sheet 818 exposed to the air are subjected to surface tin plating treatment to prevent oxidation of the heat dissipation pad 3 and the first electrode sheet 81.

[0066] In step s105, the circuit layer substrate 10 is placed on the upper surface of the tile layer 4 by means of flexible pads 9. Specifically, the flexible pads 9 are fixed around the upper surface of the tile layer 4 by means of insulating adhesive, and the circuit layer substrate 10 is fixed on the flexible pads 9 by means of welding process, thereby forming upper and lower encapsulation layers. The circuit layer substrate 10 is provided with a second conductive via 11 to construct the internal power circuit of the upper and lower encapsulation layers. The second conductive via 11 is also formed by means of deposition and pitting etching process. The position of the circuit layer substrate 10 and the position and height of the flexible pads 9 are related to the size and mounting position of the boss 2 of the metal substrate and the semiconductor non-power IC 12 and power IC 13.

[0067] In step S104, the installation of the power IC13 specifically involves: preparing a conductive interconnect structure on the active surface of the power IC13, wherein a first set of conductive pillars 15 is prepared on the active surface of the power IC13 by electroplating, and the first set of solder balls 16 are melted and connected to the first set of conductive pillars 15 and the circuit layer substrate 10 by reflow soldering or other processes.

[0068] In step S104, the installation of the power IC13 further includes: bottom filling the conductive interconnect structure to form a first filling layer 17.

[0069] In step S106, the installation of the non-power IC12 specifically involves: fabricating a conductive interconnect structure on the active surface of the non-power IC12, wherein a second set of conductive pillars 22 is fabricated on the active surface of the non-power IC12 by electroplating, and the second set of solder balls 23 are melted and connected to the second set of conductive pillars 22 and the circuit layer substrate 10 by reflow soldering and other processes, and the conductive interconnect structure is bottom-filled to form a second filling layer 23.

[0070] The electrical connection between the non-power IC 12 and power IC 13, the circuit layer substrate 10, and the second electrode plate 828 is specifically as follows: the non-power IC 12 and power IC 13 are electrically connected to the circuit layer substrate 10 through the second conductive via 11; the first electrode plate 81 is electrically connected to the circuit layer substrate 10 through an aluminum wire bonding process 18. Specifically, the non-power IC 12 and power IC 13 form an internal electrical circuit through the second conductive via 11 and the circuit layer substrate 10, and an external electrical circuit through the aluminum wire 18, the first electrode plate 818, and the first conductive via 7. In this preferred embodiment, by providing the second conductive via 11, the non-power IC 12 and power IC 13 are electrically connected to the circuit layer substrate 10 through the second conductive via 11, which greatly shortens the electrical connection path, reduces inductance, and increases packaging density.

[0071] In step S107, the sealing of the molding compound 20 specifically involves the molding compound 20 wrapping the upper and lower encapsulation layers through processes such as injection molding and dispensing, and connecting with the resin insulating layer to form a sealed package. The sides of the molding compound 20 are flush with the sides of the first stepped layer 5 and the second stepped layer 6, the bottom surface of the molding compound 20 is flush with the top surface of the flat layer 4, and the thickness of the molding compound 20 is slightly higher than that of the resin insulating layer, thereby achieving an insulating and sealed encapsulation effect.

[0072] Preferably, the molding layer 20 is made of ceramic powder reinforced epoxy resin material. Specifically, in this embodiment, the molding layer 20 uses aluminum nitride, which improves insulation performance while providing high thermal conductivity and improving heat dissipation performance.

[0073] Furthermore, the integrated packaging method also includes step S108 in step S107, installing a heat sink 21; specifically: chemically polishing the passive surface of the non-power IC 12, and preparing a metal layer 19 on the polished passive surface of the non-power IC 12, using a metal material with high thermal conductivity as the metal layer 19; further including:

[0074] The bottom surface of the radiator 21 is ground to obtain a third metal mirror surface;

[0075] The side of metal layer 19 furthest from the non-power IC12 is ground to obtain a fourth metal mirror surface;

[0076] The third and fourth metal mirrors are fused together by hot pressing to form a heat dissipation channel.

[0077] In this preferred embodiment, the power IC13 is directly connected to the boss 2 of the metal substrate 1, reducing the heat propagation path and dissipating heat through the heat dissipation pad 3. In addition, the non-power IC12 is in contact with the metal layer 19, and the metal layer 19 is in contact with the heat sink 21, thereby dissipating heat through the heat sink 21. Therefore, this embodiment adopts a double-sided heat dissipation structure, which greatly increases the heat transfer path and makes the heat dissipation performance of the integrated package structure better.

[0078] In addition, the metal substrate 1 is made of a metal matrix composite material reinforced with ceramic particles such as copper diamond with high thermal conductivity, and the molding layer 20 and the resin insulation layer are made of a composite material of epoxy resin reinforced with ceramic powder, which further improves the heat dissipation performance. The circuit layer substrate 10 and the flexible pad 9 allow the components to be embedded inside the metal core substrate. This embedded packaging structure greatly optimizes the heat transfer path and increases the packaging density, which is very beneficial to the integrated development of packaging.

[0079] The above is only one specific embodiment of the present invention, and any improvements made based on the concept of the present invention shall be considered within the scope of protection of the present invention.

Claims

1. An integrated packaging structure for a power module, characterized in that, The integrated packaging structure includes a metal core substrate, a molding compound forming a closed space with the metal core substrate, a semiconductor IC, and a circuit layer substrate, all located within the closed space. The metal core substrate includes a metal base and a resin insulating layer surrounding a portion of the outer periphery of the metal base. The semiconductor IC includes a power IC and a non-power IC located on the upper and lower sides of the circuit layer substrate, respectively. The power IC is disposed on the metal base, and both the power IC and the non-power IC are electrically connected to the circuit layer substrate. A first conductive via is provided inside the resin insulating layer. A first electrode is provided at one end of the first conductive via, and a second electrode is provided at the other end of the first conductive via. Both the first electrode and the second electrode are embedded in the resin insulating layer, with one side of the first electrode exposed to the outside and one side of the second electrode exposed in the closed space. The second electrode is electrically connected to the circuit layer substrate.

2. The integrated packaging structure of the power module according to claim 1, characterized in that, The resin insulating layer includes a ply layer surrounding a portion of the outer periphery of the metal substrate, a first step layer disposed above the ply layer, and a second step layer disposed above the first step layer, wherein the inner periphery of the first step layer is smaller than the inner periphery of the second step layer.

3. The integrated packaging structure of the power module according to claim 2, characterized in that, The first conductive via includes a first portion disposed within the ply layer and a second portion disposed within the first stepped layer.

4. The integrated packaging structure of the power module according to claim 3, characterized in that, The tiling layer forms an enclosing space, and the metal substrate includes a body located in the enclosing space and a plurality of protrusions extending from the body into the enclosed space, with the power IC located on the plurality of protrusions.

5. The integrated packaging structure of the power module according to claim 1, characterized in that, The integrated packaging structure further includes a plurality of flexible pads at both ends that abut against the resin insulating layer and the circuit layer substrate, respectively, and the flexible pads are spaced apart from the power IC. The circuit layer substrate is disposed on the resin insulating layer through the flexible pads to form upper and lower packaging layers.

6. The integrated packaging structure of the power module according to claim 5, characterized in that, The circuit layer substrate is provided with a second conductive via to construct the internal power circuit of the upper and lower encapsulation layers.

7. The integrated packaging structure of the power module according to claim 1, characterized in that, The metal substrate is made of ceramic particle-reinforced metal matrix composite material.

8. The integrated packaging structure of the power module according to claim 1, characterized in that, The integrated package structure also includes a metal layer in contact with the non-power IC, a heat sink in contact with the metal layer and exposed to the outside, and a heat dissipation pad in contact with the metal substrate and exposed to the outside. One side of the heat sink abuts against the resin insulating layer, and the outer periphery of the heat dissipation pad abuts against the resin insulating layer.

9. An integrated packaging method for a power module, characterized in that, The integrated packaging method includes the following steps: S101: A portion of the metal substrate is encased in a resin insulating layer; S102: The first conductive via is formed within the resin insulating layer; S103: Embed a first electrode sheet and a second electrode sheet in the resin insulating layer, and the first electrode sheet and the second electrode sheet are located at both ends of the first conductive through hole; S104: Mount the power IC onto the metal substrate; S105: Mount the circuit layer substrate onto the resin insulating layer, and electrically connect the circuit layer substrate to the power IC, and electrically connect the circuit layer substrate to the second electrode sheet; S106: Install a non-power IC on top of the circuit layer substrate, and make the circuit layer substrate electrically connected to the non-power IC; S107: Prepare a molding layer such that the molding layer, the metal substrate, and the resin insulating layer form a closed space, with one side of the first electrode exposed to the outside and one side of the second electrode exposed in the closed space.

10. The integrated packaging method for a power module according to claim 9, characterized in that, The first electrode sheet and the second electrode sheet are embedded in the resin insulating layer by an etching process, and the first conductive via is formed by a deposition and pitting etching process.

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