Epitaxial furnace cleaning method and device, electronic equipment and storage medium
By adjusting the rotation of the graphite tray in a vacuum environment and cleaning the epitaxial furnace with argon and chlorine trifluoride, the problem of removing silicon carbide particles from the epitaxial furnace was solved, thus improving production efficiency and cleaning efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- JIHUA LAB
- Filing Date
- 2023-07-06
- Publication Date
- 2026-06-02
AI Technical Summary
Existing epitaxial furnace cleaning methods are ineffective at removing residual, hard silicon carbide particles, leading to defects on the surface of epitaxial films, which affects production efficiency and the lifespan of graphite parts.
In a vacuum environment, the rotation of the graphite tray is adjusted, and argon and chlorine trifluoride are used to clean the epitaxial furnace reaction chamber within a specific temperature and pressure range. Combined with the rotation of the graphite tray, the silicon carbide particles are cleaned.
It eliminates the cumbersome cavity cleaning process, improves epitaxial production efficiency and the service life of graphite parts, and enhances the cleaning efficiency of the epitaxial furnace.
Smart Images
Figure CN116791198B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of cleaning silicon carbide epitaxial furnaces, and more specifically, to a method, apparatus, electronic device, and storage medium for cleaning epitaxial furnaces. Background Technology
[0002] Third-generation semiconductor material SiC (silicon carbide) has advantages such as a large bandgap, high breakdown field strength, and fast electron saturation drift velocity, making it an ideal material for fabricating high-temperature, high-frequency, high-power, and high-voltage devices. SiC power devices have been widely used in 5G communications, smart grids, rail transportation, and new energy vehicles.
[0003] Existing horizontal SiC high-temperature epitaxial equipment, while forming a SiC thin film on the substrate surface, also deposits SiC impurities on the graphite surface of the reaction chamber. These impurities are usually granular rather than thin films. With each epitaxial growth cycle, the number and size of SiC particles accumulating on the graphite surface increase. Some of these loose particles easily detach from the graphite surface and mix into the growing SiC epitaxial step flow, causing various surface defects on the SiC epitaxial film surface, such as triangular defects and debris. In production practice, it has been found that for existing horizontal monolithic epitaxial equipment, the reaction chamber must be cleaned after every 400-500 μm of SiC epitaxial film growth; otherwise, residual, hard SiC particles will deposit in the gap between the graphite mask and the substrate in the reaction chamber. Traditional epitaxial furnace reaction chamber cleaning methods, such as manual cleaning or chemical soaking, are insufficient to remove these residual, hard SiC particles.
[0004] Therefore, in order to solve the technical problem that existing epitaxial furnace cleaning methods are unable to remove residual hard silicon carbide particles, there is an urgent need for an epitaxial furnace cleaning method, apparatus, electronic equipment and storage medium. Summary of the Invention
[0005] The purpose of this application is to provide an epitaxial furnace cleaning method, apparatus, electronic equipment, and storage medium. By setting a vacuum environment, maintaining the rotation of the graphite tray, and adjusting the corresponding temperature and pressure, the epitaxial furnace is cleaned using argon and chlorine trifluoride gas. This solves the problem that existing epitaxial furnace cleaning methods are unable to remove residual hard silicon carbide particles, eliminates the cumbersome cavity cleaning process, effectively cleans silicon carbide particles, improves epitaxial production efficiency and the service life of graphite parts, and improves the cleaning efficiency of the epitaxial furnace.
[0006] In a first aspect, this application provides a method for cleaning an epitaxial furnace, used to clean a silicon carbide epitaxial furnace, comprising the following steps:
[0007] Obtain silicon carbide information of graphite components in the epitaxial furnace reaction chamber before cleaning;
[0008] The epitaxial furnace reaction chamber is set to a vacuum cleaning environment;
[0009] The motion state of the graphite tray in the epitaxial furnace reaction chamber is adjusted to a rotating state;
[0010] Argon and chlorine trifluoride are used to clean the epitaxial furnace reaction chamber based on a preset temperature range and a preset pressure range, combined with the vacuum cleaning environment and the rotation state of the graphite tray, to obtain the cleaned silicon carbide information.
[0011] The cleaning effect is determined by comparing the silicon carbide information before and after cleaning.
[0012] The epitaxial furnace cleaning method provided in this application can clean the epitaxial furnace. By setting a vacuum environment, maintaining the rotation of the graphite tray, and adjusting the corresponding temperature and pressure, the epitaxial furnace is cleaned using argon and chlorine trifluoride gas. This solves the problem that existing epitaxial furnace cleaning methods are unable to remove residual hard silicon carbide particles, eliminates the cumbersome cavity cleaning process, effectively removes silicon carbide particles, improves epitaxial production efficiency and the service life of graphite parts, and improves the cleaning efficiency of the epitaxial furnace.
[0013] Optionally, before obtaining the silicon carbide information of the graphite parts in the epitaxial furnace reaction chamber before cleaning, the process further includes:
[0014] When the cumulative thickness of the silicon carbide film grown in the epitaxial furnace reaction chamber reaches a preset first thickness, a cleaning program is initiated to clean the epitaxial furnace reaction chamber.
[0015] Optionally, the epitaxial furnace reaction chamber is set to a vacuum cleaning environment, including:
[0016] Remove the residual gas from the reaction chamber of the epitaxial furnace;
[0017] A vacuum operation is performed on the epitaxial furnace reaction chamber to obtain a vacuum cleaning environment for the epitaxial furnace reaction chamber.
[0018] The epitaxial furnace cleaning method provided in this application can clean the epitaxial furnace. By setting the reaction chamber of the epitaxial furnace to a vacuum cleaning environment, the reaction chamber of the epitaxial furnace is guaranteed to be airtight, which is beneficial to improving the cleaning efficiency of the epitaxial furnace.
[0019] Optionally, the preset temperature range includes a first temperature range and a second temperature range; the preset pressure range includes a first pressure range and a second pressure range; using argon and chlorine trifluoride, based on the preset temperature range and preset pressure range, combined with the vacuum cleaning environment and the rotation state of the graphite tray, the epitaxial furnace reaction chamber is cleaned to obtain the cleaned silicon carbide information, including:
[0020] It is determined that the epitaxial furnace reaction chamber is in the vacuum cleaning environment and the graphite tray is in the rotating state;
[0021] The pressure and temperature of the epitaxial furnace reaction chamber are set within a first pressure range and a first temperature range, and argon gas with a preset first threshold flow rate is input.
[0022] Based on the first temperature range and the second pressure range, the epitaxial furnace reaction chamber is cleaned using argon and chlorine trifluoride.
[0023] By adjusting the pressure and temperature of the epitaxial furnace reaction chamber within the standard atmospheric pressure and second temperature range, information on the cleaned silicon carbide is obtained.
[0024] The epitaxial furnace cleaning method provided in this application can clean the epitaxial furnace by using argon gas, chlorine trifluoride gas, and a preset temperature and pressure range to clean the reaction chamber of the epitaxial furnace. This method can effectively remove silicon carbide particles from the reaction chamber of the epitaxial furnace and improve the cleaning efficiency of the epitaxial furnace.
[0025] Optionally, based on the first temperature range and the second pressure range, the epitaxial furnace reaction chamber is cleaned using argon and chlorine trifluoride, including a step of repeating the process multiple times.
[0026] Based on the first temperature range and the first pressure range, within a preset first cycle, argon gas at the second threshold flow rate and chlorine trifluoride gas at the preset third threshold flow rate are input into the epitaxial furnace reaction chamber.
[0027] The pressure in the epitaxial furnace reaction chamber is adjusted to a second pressure range, the input of chlorine trifluoride is stopped, and the input flow rate of argon is increased to a fourth threshold flow rate within a preset second cycle.
[0028] Optionally, adjusting the pressure and temperature of the epitaxial furnace reaction chamber within the standard atmospheric pressure and second temperature range yields information on the cleaned silicon carbide, including:
[0029] Stop the input of argon gas and adjust the pressure and temperature of the epitaxial furnace reaction chamber to the standard atmospheric pressure and second temperature range to end the cleaning process of the epitaxial furnace reaction chamber;
[0030] Obtain the information of the cleaned silicon carbide in the epitaxial furnace reaction chamber.
[0031] Optionally, the cleaning effect is determined by comparing the silicon carbide information before cleaning and the silicon carbide information after cleaning, including:
[0032] Extract the total number of first particles and the number of first defects on the surface of the epitaxial wafer from the silicon carbide information before cleaning;
[0033] Extract the total number of second particles and the number of second defects from the epitaxial wafer surface in the cleaned silicon carbide information;
[0034] The cleaning effect is determined by comparing the total number of the first particles with the total number of the second particles, and by comparing the number of the first defects with the number of the second defects.
[0035] Secondly, this application provides an epitaxial furnace cleaning apparatus for cleaning a silicon carbide epitaxial furnace, comprising:
[0036] The acquisition module is used to acquire silicon carbide information of graphite parts in the epitaxial furnace reaction chamber before cleaning;
[0037] The setting module is used to set the epitaxial furnace reaction chamber to a vacuum cleaning environment;
[0038] The adjustment module is used to adjust the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state;
[0039] The cleaning module is used to clean the epitaxial furnace reaction chamber using argon and chlorine trifluoride gas, based on a preset temperature range and a preset pressure range, combined with the vacuum cleaning environment and the rotation state of the graphite tray, to obtain the cleaned silicon carbide information.
[0040] The comparison module is used to compare the silicon carbide information before cleaning with the silicon carbide information after cleaning to determine the cleaning effect.
[0041] This epitaxial furnace cleaning device cleans the epitaxial furnace by setting a vacuum environment, maintaining the rotation of the graphite tray, and adjusting the corresponding temperature and pressure, using argon and chlorine trifluoride gas. It solves the problem that existing epitaxial furnace cleaning methods are unable to remove residual hard silicon carbide particles, eliminates the cumbersome cavity cleaning process, effectively removes silicon carbide particles, improves epitaxial production efficiency and the service life of graphite parts, and improves the cleaning efficiency of the epitaxial furnace.
[0042] Thirdly, this application provides an electronic device including a processor and a memory, wherein the memory stores a computer program executable by the processor, and when the processor executes the computer program, it performs the steps in the epitaxial furnace cleaning method described above.
[0043] Fourthly, this application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, performs the steps of the epitaxial furnace cleaning method described above.
[0044] Beneficial effects: The epitaxial furnace cleaning method, apparatus, electronic equipment, and storage medium provided in this application clean the epitaxial furnace by setting a vacuum environment, maintaining the rotation of the graphite tray, and adjusting the corresponding temperature and pressure, using argon and chlorine trifluoride gas. This solves the problem that existing epitaxial furnace cleaning methods are unable to remove residual hard silicon carbide particles, eliminates the cumbersome cavity cleaning process, effectively cleans silicon carbide particles, improves epitaxial production efficiency and the service life of graphite parts, and improves the cleaning efficiency of the epitaxial furnace. Attached Figure Description
[0045] Figure 1 This is a flowchart of an epitaxial furnace cleaning method provided in an embodiment of this application.
[0046] Figure 2 This is a schematic diagram of the structure of the epitaxial furnace cleaning device provided in the embodiments of this application.
[0047] Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application.
[0048] Figure 4 This is a schematic diagram of the reaction chamber of an epitaxial furnace.
[0049] Figure 5 This is a schematic diagram comparing the number of particles on the surface of a silicon carbide epitaxial wafer before and after cleaning.
[0050] Figure 6 This is a schematic diagram comparing the number of surface defects on a silicon carbide epitaxial wafer before and after cleaning.
[0051] Labeling Explanation: 1. Acquisition Module; 2. Setting Module; 3. Adjustment Module; 4. Cleaning Module; 5. Comparison Module; 11. Induction Coil; 12. Graphite Felt; 13. Quartz Tube; 14. Downstream Graphite Shield; 15. Lower Half-Moon Graphite Component; 16. Air-Suspension Graphite Pipe; 17. Graphite Base; 18. Upstream Graphite Shield; 19. Graphite Tray; 20. Upper Half-Moon Graphite Component; 21. Silicon Carbide Substrate; 301. Processor; 302. Memory; 303. Communication Bus. Detailed Implementation
[0052] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0053] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.
[0054] Please refer to Figure 1 , Figure 1 This application discloses a method for cleaning an epitaxial furnace, as described in some embodiments, for cleaning a silicon carbide epitaxial furnace, comprising:
[0055] Step S101: Obtain silicon carbide information of the graphite parts in the epitaxial furnace reaction chamber before cleaning;
[0056] Step S102: Set the epitaxial furnace reaction chamber to a vacuum cleaning environment;
[0057] Step S103: Adjust the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state;
[0058] Step S104: Using argon and chlorine trifluoride, based on a preset temperature range and a preset pressure range, combined with a vacuum cleaning environment and the rotation state of the graphite tray, the epitaxial furnace reaction chamber is cleaned to obtain the cleaned silicon carbide information.
[0059] Step S105: Compare the silicon carbide information before cleaning with the silicon carbide information after cleaning to determine the cleaning effect.
[0060] This epitaxial furnace cleaning method, by setting a vacuum environment, maintaining the rotation of the graphite tray, and adjusting the corresponding temperature and pressure, uses argon and chlorine trifluoride gas to clean the epitaxial furnace. It solves the problem that existing epitaxial furnace cleaning methods are unable to remove residual hard silicon carbide particles, eliminates the cumbersome cavity cleaning process, effectively removes silicon carbide particles, improves epitaxial production efficiency and the service life of graphite parts, and improves the cleaning efficiency of the epitaxial furnace.
[0061] Specifically, in step S101, before obtaining the silicon carbide information of the graphite parts in the epitaxial furnace reaction chamber before cleaning, the following steps are also included:
[0062] When the cumulative thickness of the silicon carbide film grown in the epitaxial furnace reaction chamber reaches the preset first thickness, the cleaning program is started to clean the epitaxial furnace reaction chamber.
[0063] When the total thickness of the silicon carbide film grown in the epitaxial furnace reaction chamber reaches 400~500um (i.e., the preset first thickness), the cleaning program will be started to clean the reaction chamber.
[0064] Specifically, in step S101, a silicon carbide epitaxial wafer grown in the epitaxial furnace reaction chamber is obtained (the silicon carbide epitaxial wafer is prepared using an epitaxial furnace before cleaning, and the silicon carbide epitaxial wafer is obtained), and the total number of particles and the number of defects (triangular defects) on its surface are tested to obtain silicon carbide information before cleaning (i.e., silicon carbide information includes the total number of particles and the number of defects on the surface of the silicon carbide epitaxial wafer). Please refer to [link to relevant documentation]. Figure 4 , Figure 4 This is a schematic diagram of the structure of the epitaxial furnace reaction chamber, which includes an induction coil 11, a graphite felt 12, a quartz tube 13, a downstream graphite shield 14, a lower crescent-shaped graphite element 15, an air-suspended graphite pipe 16, a graphite base 17, an upstream graphite shield 18, a graphite tray 19, an upper crescent-shaped graphite element 20, and a silicon carbide substrate 21. The graphite element is composed of the downstream graphite shield 14, the lower crescent-shaped graphite element 15, the graphite base 17, the upstream graphite shield 18, the graphite tray 19, and the upper crescent-shaped graphite element 20. The silicon carbide substrate 21 is a silicon carbide epitaxial wafer.
[0065] Specifically, in step S102, setting the epitaxial furnace reaction chamber to a vacuum cleaning environment includes:
[0066] Clean the residual gas inside the epitaxial furnace reaction chamber;
[0067] A vacuum operation is performed on the epitaxial furnace reaction chamber to obtain a vacuum cleaning environment for the epitaxial furnace reaction chamber.
[0068] In step S102, Ar (argon gas) at a flow rate of 20~50 slm is introduced for about 2~3 minutes to purge the epitaxial furnace reaction chamber and remove residual gases such as H2 (hydrogen gas) from the reaction chamber.
[0069] Vacuuming is performed on the epitaxial furnace reaction chamber. The vacuuming operation can be performed automatically by the epitaxial furnace reaction chamber. The epitaxial furnace reaction chamber will first perform a low vacuum operation, and then a high vacuum operation to obtain a vacuum cleaning environment in the epitaxial furnace reaction chamber. The vacuum degree of the vacuum cleaning environment should reach 1E-4mbar~9E-4mbar.
[0070] High vacuum and low vacuum refer to different ranges of gas pressure. In a high vacuum, the gas pressure is extremely low, and the number density of gas molecules is so small as to be almost negligible. In a low vacuum, the gas pressure is relatively high, and the number density of gas molecules is relatively high, but the molecules can still maintain free movement between each other.
[0071] Specifically, in step S103, the movement state of the graphite tray in the epitaxial furnace reaction chamber is adjusted to a rotating state, and this rotating state is maintained during the cleaning process. Adjusting the graphite tray in the reaction chamber to a rotating state, so that its rotational speed is the same as that during epitaxial growth (approximately 60 revolutions per minute, but not limited to this), aims to ensure that the ClF3 (chlorine trifluoride gas) introduced during the subsequent cleaning process can more fully contact and react with the SiC particles, achieving a more ideal cleaning effect.
[0072] Specifically, in step S104, the preset temperature range includes a first temperature range and a second temperature range; the preset pressure range includes a first pressure range and a second pressure range; using argon and chlorine trifluoride, based on the preset temperature range and preset pressure range, combined with the vacuum cleaning environment and the rotation state of the graphite tray, the epitaxial furnace reaction chamber is cleaned to obtain the cleaned silicon carbide information, including:
[0073] It was determined that the epitaxial furnace reaction chamber was in a vacuum cleaning environment and that the graphite tray was in a rotating state;
[0074] The pressure and temperature of the epitaxial furnace reaction chamber are set within a first pressure range and a first temperature range, and argon gas with a preset first threshold flow rate is input.
[0075] Based on the first temperature range and the second pressure range, argon and chlorine trifluoride are used to clean the epitaxial furnace reaction chamber.
[0076] By adjusting the pressure and temperature of the epitaxial furnace reaction chamber within the standard atmospheric pressure and second temperature range, information on the cleaned silicon carbide is obtained.
[0077] In step S104, it is first determined that the epitaxial furnace reaction chamber is in a vacuum cleaning environment and the graphite tray is in a rotating state. The pressure of the epitaxial furnace reaction chamber is controlled within 800~900mbar (i.e., the first pressure range), and the temperature is controlled within 800~900℃ (i.e., the first temperature range). The butterfly valve of the epitaxial furnace reaction chamber is adjusted to the open state, and Ar with a flow rate of 2~3slm (i.e., the first threshold flow rate) is introduced as the carrier gas.
[0078] Traditional self-cleaning methods for epitaxial furnace reaction chambers involve controlling the temperature below 400℃ and the pressure below 800mbar. This method is suitable for cleaning SiC thin films. Because SiC films have regular shapes, uniform distribution, and small anisotropy differences, high-concentration ClF3 can quickly remove SiC films deposited on graphite parts. However, in horizontal high-temperature epitaxial furnaces, the graphite parts deposited in the reaction chamber are not SiC films, but SiC particles. Since these particles repeatedly undergo high temperatures and recrystallization within the reaction chamber, and their distribution is not uniform, simply introducing high-concentration ClF3 is insufficient to effectively remove them. Furthermore, simply increasing the cleaning time can corrode the graphite surface. Therefore, a cycle of "low-concentration ClF3 cleaning + high-flow-rate Ar purging" is used to overcome these difficulties. In addition, increasing the cleaning temperature to 800~900℃ is to increase the reaction rate between ClF3 and SiC particles; at the same time, increasing the pressure in the reaction chamber to 800~900mbar is to slow down the flow rate of ClF3 gas in the reaction chamber, which is equivalent to increasing the residence time of ClF3 gas in the reaction chamber.
[0079] Specifically, in step S104, based on a first temperature range and a second pressure range, the epitaxial furnace reaction chamber is cleaned using argon and chlorine trifluoride gas, including a step that is repeated multiple times:
[0080] Based on a first temperature range and a first pressure range, within a preset first cycle, argon gas at a second threshold flow rate and chlorine trifluoride gas at a preset third threshold flow rate are input into the epitaxial furnace reaction chamber.
[0081] Adjust the pressure in the epitaxial furnace reaction chamber within the second pressure range, stop the input of chlorine trifluoride, and increase the input flow rate of argon to the fourth threshold flow rate within the preset second cycle.
[0082] For example, in step S104, the following steps are executed repeatedly (the number of iterations is 3 to 10):
[0083] 1) Maintain the pressure and temperature of the epitaxial furnace reaction chamber at a constant level (within the first pressure range and the first temperature range), and introduce ClF3 gas at a flow rate of 200~300 sccm (i.e., the third threshold flow rate) to perform in-situ cleaning of SiC particles deposited on the surfaces of the upper and lower half-moon graphite parts (upper half-moon graphite part 20 and lower half-moon graphite part 15), graphite masks (downstream graphite mask 14 and upstream graphite mask 18), and substrate carrier (graphite substrate 17) in the reaction chamber. The cleaning time is 2~5 min (i.e., the preset first cycle). The flow rate ratio of ClF3 to Ar carrier gas is controlled at about 1:10, that is, the flow rate of Ar carrier gas is 2000~3000 sccm (i.e., the second threshold flow rate).
[0084] 2) Maintain the epitaxial furnace reaction chamber within the first temperature range, adjust the pressure of the epitaxial furnace reaction chamber within 20~50mbar (i.e., the second pressure range), stop the input of ClF3 gas, increase the input flow rate of carrier gas Ar to 20~50slm (i.e., the fourth threshold flow rate), purge the reaction chamber to replace the reaction products such as SiF4, CF4 and Cl2 remaining in the reaction chamber, and purge for 2~3min (i.e., the preset second cycle).
[0085] If there are many defects on the surface of the silicon carbide epitaxial wafer, the number of cleaning cycles can be increased flexibly, and the number of cycles can be increased according to the actual situation.
[0086] Specifically, in step S104, the pressure and temperature of the epitaxial furnace reaction chamber are adjusted within the standard atmospheric pressure and second temperature range to obtain information on the cleaned silicon carbide, including:
[0087] Stop the input of argon gas and adjust the pressure and temperature of the epitaxial furnace reaction chamber to the standard atmospheric pressure and second temperature range to end the cleaning process of the epitaxial furnace reaction chamber;
[0088] Obtain information on silicon carbide after cleaning the epitaxial furnace reaction chamber.
[0089] In step S104, Ar input is stopped, the pressure in the epitaxial furnace reaction chamber is adjusted to standard atmospheric pressure, the temperature is lowered, and the temperature is waited for to drop below 100°C (i.e., the second temperature range). The self-cleaning process (cleaning process) of the reaction chamber is ended, and the silicon carbide information after cleaning of the epitaxial furnace reaction chamber is obtained (i.e., silicon carbide epitaxial wafers are prepared using the cleaned epitaxial furnace, and the total number of particles and the number of defects (triangular defects) on the surface of the silicon carbide epitaxial wafers are tested to obtain the silicon carbide information after cleaning).
[0090] Specifically, in step S105, the silicon carbide information before cleaning and the silicon carbide information after cleaning are compared to determine the cleaning effect, including:
[0091] Extract the total number of first particles and the number of first defects from the silicon carbide information before cleaning;
[0092] Extract the total number of second particles and the number of second defects from the epitaxial wafer surface in the information of cleaned silicon carbide.
[0093] The cleaning effect is determined by comparing the total number of particles in the first phase and the total number of particles in the second phase, as well as by comparing the number of defects in the first phase and the number of defects in the second phase.
[0094] In step S105, the silicon carbide information before cleaning and the silicon carbide information after cleaning are compared, that is, the total number of first particles and the total number of second particles are compared, and the number of first defects and the number of second defects are compared to determine the cleaning effect. For example, if the reduction rate of the total number of second particles relative to the total number of first particles is not less than a preset first reduction threshold, and the reduction rate of the number of second defects relative to the number of first defects is not less than a preset second reduction threshold, then the cleaning effect is deemed qualified and the cleaning ends; otherwise, the cleaning effect is deemed unqualified and the cleaning is performed again.
[0095] For example, such as Figure 5 , Figure 6 As shown, Figure 5 This is a schematic diagram comparing the number of particles on the surface of a silicon carbide epitaxial wafer before and after cleaning. Figure 6 This is a schematic diagram comparing the number of surface defects on a silicon carbide epitaxial wafer before and after cleaning. Figure 5 , Figure 6 The horizontal axis in the figure represents the cleaning method. Figure 5 , Figure 6 The vertical axis represents the number of items. Figure 5 The small squares in the image represent the number of particles on the surface of the silicon carbide epitaxial wafer. Figure 6 The small triangles in the diagram represent the number of defects on the silicon carbide epitaxial wafer surface. 'a' represents the surface before epitaxial furnace cleaning, 'b' represents the surface after cleaning using the complete epitaxial furnace cleaning method of this invention, 'c' represents the surface after cleaning using epitaxial furnace cleaning method C, 'd' represents the surface after cleaning using epitaxial furnace cleaning method D, and 'e' represents the surface after cleaning using epitaxial furnace cleaning method E. Epitaxial furnace cleaning methods C, D, and E are epitaxial furnace cleaning methods obtained by changing different cleaning conditions according to the present invention. Epitaxial furnace cleaning method C involves keeping the graphite tray stationary in the epitaxial furnace cleaning method of this invention. Epitaxial furnace cleaning method D involves keeping the graphite tray stationary in the epitaxial furnace cleaning method of this invention, using the cleaning temperature conditions and number of cleaning cycles in a traditional cleaning method. E involves keeping the graphite tray stationary in the epitaxial furnace cleaning method of this invention, using the cleaning pressure conditions and number of cleaning cycles in a traditional cleaning method. Figure 5 , Figure 6 It can be seen that after cleaning using the complete epitaxial furnace cleaning method of the present invention, the total number of particles and defects on the surface of silicon carbide epitaxial wafers are reduced the most, and the cleaning effect is the most obvious. Therefore, it can be concluded that the epitaxial furnace cleaning method of the present invention can clean the residual deposits in the reaction chamber of SiC epitaxial furnace very quickly and effectively.
[0096] As can be seen from the above, this epitaxial furnace cleaning method obtains the silicon carbide information of the graphite parts in the epitaxial furnace reaction chamber before cleaning, sets the epitaxial furnace reaction chamber to a vacuum cleaning environment, adjusts the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state, and uses argon and chlorine trifluoride gas to clean the epitaxial furnace reaction chamber based on preset temperature and pressure ranges, combined with the vacuum cleaning environment and the rotation state of the graphite tray. The cleaned silicon carbide information is then obtained, and the cleaning effect is determined by comparing the silicon carbide information before and after cleaning. Therefore, by setting a vacuum environment, maintaining the rotation state of the graphite tray, and adjusting the corresponding temperature and pressure, and using argon and chlorine trifluoride gas to clean the epitaxial furnace, this method solves the problem of existing epitaxial furnace cleaning methods being unable to remove residual, hard silicon carbide particles. It eliminates the cumbersome opening and cleaning process, effectively removes silicon carbide particles, improves epitaxial production efficiency and the service life of graphite parts, and increases the cleaning efficiency of the epitaxial furnace.
[0097] refer to Figure 2 This application provides an epitaxial furnace cleaning apparatus for cleaning a silicon carbide epitaxial furnace, comprising:
[0098] Module 1 is used to acquire silicon carbide information of graphite parts in the epitaxial furnace reaction chamber before cleaning;
[0099] Setting module 2 is used to set the epitaxial furnace reaction chamber to a vacuum cleaning environment;
[0100] Adjustment module 3 is used to adjust the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state;
[0101] Cleaning module 4 is used to clean the epitaxial furnace reaction chamber using argon and chlorine trifluoride gas, based on a preset temperature range and a preset pressure range, combined with a vacuum cleaning environment and the rotation state of the graphite tray, to obtain the cleaned silicon carbide information.
[0102] Comparison module 5 is used to compare the silicon carbide information before and after cleaning to determine the cleaning effect.
[0103] This epitaxial furnace cleaning device cleans the epitaxial furnace by setting a vacuum environment, maintaining the rotation of the graphite tray, and adjusting the corresponding temperature and pressure, using argon and chlorine trifluoride gas. It solves the problem that existing epitaxial furnace cleaning methods are unable to remove residual hard silicon carbide particles, eliminates the cumbersome cavity cleaning process, effectively removes silicon carbide particles, improves epitaxial production efficiency and the service life of graphite parts, and improves the cleaning efficiency of the epitaxial furnace.
[0104] Specifically, before acquiring the silicon carbide information of the graphite parts in the epitaxial furnace reaction chamber before cleaning, module 1 performs the following:
[0105] When the cumulative thickness of the silicon carbide film grown in the epitaxial furnace reaction chamber reaches the preset first thickness, the cleaning program is started to clean the epitaxial furnace reaction chamber.
[0106] When the total thickness of the silicon carbide film grown in the epitaxial furnace reaction chamber reaches 400~500um (i.e., the preset first thickness), the cleaning program will be started to clean the reaction chamber.
[0107] Specifically, when module 1 is executed, it acquires the silicon carbide epitaxial wafer grown in the epitaxial furnace reaction chamber (the silicon carbide epitaxial wafer is prepared using the epitaxial furnace before cleaning, and the silicon carbide epitaxial wafer is obtained), and tests the total number of particles and the number of defects (triangular defects) on its surface to obtain silicon carbide information before cleaning (i.e., silicon carbide information includes the total number of particles and the number of defects on the surface of the silicon carbide epitaxial wafer). Please refer to [link / reference]. Figure 4 , Figure 4 This is a schematic diagram of the structure of the epitaxial furnace reaction chamber, which includes an induction coil 11, a graphite felt 12, a quartz tube 13, a downstream graphite shield 14, a lower crescent-shaped graphite element 15, an air-suspended graphite pipe 16, a graphite base 17, an upstream graphite shield 18, a graphite tray 19, an upper crescent-shaped graphite element 20, and a silicon carbide substrate 21. The graphite element is composed of the downstream graphite shield 14, the lower crescent-shaped graphite element 15, the graphite base 17, the upstream graphite shield 18, the graphite tray 19, and the upper crescent-shaped graphite element 20. The silicon carbide substrate 21 is a silicon carbide epitaxial wafer.
[0108] Specifically, in step S102, setting the epitaxial furnace reaction chamber to a vacuum cleaning environment includes:
[0109] Clean the residual gas inside the epitaxial furnace reaction chamber;
[0110] A vacuum operation is performed on the epitaxial furnace reaction chamber to obtain a vacuum cleaning environment for the epitaxial furnace reaction chamber.
[0111] In step S102, Ar (argon gas) at a flow rate of 20~50 slm is introduced for about 2~3 minutes to purge the epitaxial furnace reaction chamber and remove residual gases such as H2 (hydrogen gas) from the reaction chamber.
[0112] Vacuuming is performed on the epitaxial furnace reaction chamber. The vacuuming operation can be performed automatically by the epitaxial furnace reaction chamber. The epitaxial furnace reaction chamber will first perform a low vacuum operation, and then a high vacuum operation to obtain a vacuum cleaning environment in the epitaxial furnace reaction chamber. The vacuum degree of the vacuum cleaning environment should reach 1E-4mbar~9E-4mbar.
[0113] High vacuum and low vacuum refer to different ranges of gas pressure. In a high vacuum, the gas pressure is extremely low, and the number density of gas molecules is so small as to be almost negligible. In a low vacuum, the gas pressure is relatively high, and the number density of gas molecules is relatively high, but the molecules can still maintain free movement between each other.
[0114] Specifically, when the adjustment module 3 is executed, it adjusts the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state and maintains the rotation state of the graphite tray during the cleaning process. Adjusting the graphite tray in the reaction chamber to a rotating state, so that the rotation speed of the graphite tray is the same as the rotation speed during epitaxial growth (this rotation speed is about 60 revolutions per minute, but not limited to this), is to allow the ClF3 (chlorine trifluoride gas) introduced in the subsequent cleaning process to come into more sufficient contact with SiC particles and react with them, so as to achieve a more ideal cleaning effect.
[0115] Specifically, the preset temperature range includes a first temperature range and a second temperature range; the preset pressure range includes a first pressure range and a second pressure range; when the cleaning module 4 uses argon and chlorine trifluoride gas, based on the preset temperature range and preset pressure range, combined with the vacuum cleaning environment and the rotation state of the graphite tray, to clean the epitaxial furnace reaction chamber and obtain the cleaned silicon carbide information, it executes:
[0116] It was determined that the epitaxial furnace reaction chamber was in a vacuum cleaning environment and that the graphite tray was in a rotating state;
[0117] The pressure and temperature of the epitaxial furnace reaction chamber are set within a first pressure range and a first temperature range, and argon gas with a preset first threshold flow rate is input.
[0118] Based on the first temperature range and the second pressure range, argon and chlorine trifluoride are used to clean the epitaxial furnace reaction chamber.
[0119] By adjusting the pressure and temperature of the epitaxial furnace reaction chamber within the standard atmospheric pressure and second temperature range, information on the cleaned silicon carbide is obtained.
[0120] When the cleaning module 4 is executed, it first determines that the epitaxial furnace reaction chamber is in a vacuum cleaning environment and that the graphite tray is in a rotating state. It controls the pressure of the epitaxial furnace reaction chamber to be within 800~900mbar (i.e., the first pressure range) and the temperature to be within 800~900℃ (i.e., the first temperature range). It adjusts the butterfly valve of the epitaxial furnace reaction chamber to the open state and introduces Ar as carrier gas with a flow rate of 2~3slm (i.e., the first threshold flow rate).
[0121] Traditional self-cleaning methods for epitaxial furnace reaction chambers involve controlling the temperature below 400℃ and the pressure below 800mbar. This method is suitable for cleaning SiC thin films. Because SiC films have regular shapes, uniform distribution, and small anisotropy differences, high-concentration ClF3 can quickly remove SiC films deposited on graphite parts. However, in horizontal high-temperature epitaxial furnaces, the graphite parts deposited in the reaction chamber are not SiC films, but SiC particles. Since these particles repeatedly undergo high temperatures and recrystallization within the reaction chamber, and their distribution is not uniform, simply introducing high-concentration ClF3 is insufficient to effectively remove them. Furthermore, simply increasing the cleaning time can corrode the graphite surface. Therefore, a cycle of "low-concentration ClF3 cleaning + high-flow-rate Ar purging" is used to overcome these difficulties. In addition, increasing the cleaning temperature to 800~900℃ is to increase the reaction rate between ClF3 and SiC particles; at the same time, increasing the pressure in the reaction chamber to 800~900mbar is to slow down the flow rate of ClF3 gas in the reaction chamber, which is equivalent to increasing the residence time of ClF3 gas in the reaction chamber.
[0122] Specifically, when cleaning module 4 cleans the epitaxial furnace reaction chamber using argon and chlorine trifluoride gas based on a first temperature range and a second pressure range, it cyclically performs the following steps multiple times:
[0123] Based on a first temperature range and a first pressure range, within a preset first cycle, argon gas at a second threshold flow rate and chlorine trifluoride gas at a preset third threshold flow rate are input into the epitaxial furnace reaction chamber.
[0124] Adjust the pressure in the epitaxial furnace reaction chamber within the second pressure range, stop the input of chlorine trifluoride, and increase the input flow rate of argon to the fourth threshold flow rate within the preset second cycle.
[0125] When cleaning module 4 is executed, it repeatedly performs the following steps multiple times (the number of loops is 3 to 10):
[0126] 1) Maintain the pressure and temperature of the epitaxial furnace reaction chamber at a constant level (within the first pressure range and the first temperature range), and introduce ClF3 gas at a flow rate of 200~300 sccm (i.e., the third threshold flow rate) to perform in-situ cleaning of SiC particles deposited on the surfaces of the upper and lower half-moon graphite parts (upper half-moon graphite part 20 and lower half-moon graphite part 15), graphite masks (downstream graphite mask 14 and upstream graphite mask 18), and substrate carrier (graphite substrate 17) in the reaction chamber. The cleaning time is 2~5 min (i.e., the preset first cycle). The flow rate ratio of ClF3 to Ar carrier gas is controlled at about 1:10, that is, the flow rate of Ar carrier gas is 2000~3000 sccm (i.e., the second threshold flow rate).
[0127] 2) Maintain the epitaxial furnace reaction chamber within the first temperature range, adjust the pressure of the epitaxial furnace reaction chamber within 20~50mbar (i.e., the second pressure range), stop the input of ClF3 gas, increase the input flow rate of carrier gas Ar to 20~50slm (i.e., the fourth threshold flow rate), purge the reaction chamber to replace the reaction products such as SiF4, CF4 and Cl2 remaining in the reaction chamber, and purge for 2~3min (i.e., the preset second cycle).
[0128] If there are many defects on the surface of the silicon carbide epitaxial wafer, the number of cleaning cycles can be increased flexibly, and the number of cycles can be increased according to the actual situation.
[0129] Specifically, when cleaning module 4 adjusts the pressure and temperature of the epitaxial furnace reaction chamber within the standard atmospheric pressure and second temperature range, and obtains the information on the cleaned silicon carbide, it executes the following:
[0130] Stop the input of argon gas and adjust the pressure and temperature of the epitaxial furnace reaction chamber to the standard atmospheric pressure and second temperature range to end the cleaning process of the epitaxial furnace reaction chamber;
[0131] Obtain information on silicon carbide after cleaning the epitaxial furnace reaction chamber.
[0132] When the cleaning module 4 is executed, it stops inputting Ar, adjusts the pressure of the epitaxial furnace reaction chamber to standard atmospheric pressure, cools down the temperature, waits for the temperature to drop below 100℃ (i.e., the second temperature range), ends the self-cleaning process of the reaction chamber (cleaning process), and obtains the silicon carbide information after cleaning of the epitaxial furnace reaction chamber (i.e., using the cleaned epitaxial furnace to prepare silicon carbide epitaxial wafers, and testing the total number of particles and the number of defects (triangular defects) on the surface of the silicon carbide epitaxial wafers to obtain the silicon carbide information after cleaning).
[0133] Specifically, when comparing the silicon carbide information before and after cleaning to determine the cleaning effect, comparison module 5 executes the following:
[0134] Extract the total number of first particles and the number of first defects from the silicon carbide information before cleaning;
[0135] Extract the total number of second particles and the number of second defects from the epitaxial wafer surface in the information of cleaned silicon carbide.
[0136] The cleaning effect is determined by comparing the total number of particles in the first phase and the total number of particles in the second phase, as well as by comparing the number of defects in the first phase and the number of defects in the second phase.
[0137] When the comparison module 5 is executed, it compares the silicon carbide information before cleaning and the silicon carbide information after cleaning, that is, it compares the total number of first particles and the total number of second particles, and compares the number of first defects and the number of second defects to determine the cleaning effect. For example, if the reduction rate of the total number of second particles relative to the total number of first particles is not less than the preset first reduction threshold, and the reduction rate of the number of second defects relative to the number of first defects is not less than the preset second reduction threshold, then the cleaning effect is deemed qualified and the cleaning ends; otherwise, the cleaning effect is deemed unqualified and the cleaning is performed again.
[0138] For example, such as Figure 5 , Figure 6 As shown, Figure 5 This is a schematic diagram comparing the number of particles on the surface of a silicon carbide epitaxial wafer before and after cleaning. Figure 6 This is a schematic diagram comparing the number of surface defects on a silicon carbide epitaxial wafer before and after cleaning. Figure 5 , Figure 6 The horizontal axis in the figure represents the cleaning method. Figure 5 , Figure 6 The vertical axis represents the number of items. Figure 5 The small squares in the image represent the number of particles on the surface of the silicon carbide epitaxial wafer. Figure 6 The small triangles in the diagram represent the number of defects on the surface of the silicon carbide epitaxial wafer. 'a' represents the wafer before epitaxial furnace cleaning, 'b' represents the wafer after cleaning using the complete cleaning process of the epitaxial furnace cleaning device of this invention, 'c' represents the wafer after cleaning using epitaxial furnace cleaning method C, 'd' represents the wafer after cleaning using epitaxial furnace cleaning method D, and 'e' represents the wafer after cleaning using epitaxial furnace cleaning method E. Epitaxial furnace cleaning methods C, D, and E are epitaxial furnace cleaning methods obtained by changing different cleaning conditions using the epitaxial furnace cleaning device of this invention. Epitaxial furnace cleaning method C involves keeping the graphite tray in the epitaxial furnace cleaning device of this invention stationary. Epitaxial furnace cleaning method D involves keeping the graphite tray in the epitaxial furnace cleaning device of this invention stationary and using the cleaning temperature conditions and number of cleaning cycles in a traditional cleaning method. E involves keeping the graphite tray in the epitaxial furnace cleaning device of this invention stationary and using the cleaning pressure conditions and number of cleaning cycles in a traditional cleaning method. Figure 5 , Figure 6 It can be seen that after cleaning using the complete epitaxial furnace cleaning method of the present invention, the reduction in the total number of particles and defects on the surface of silicon carbide epitaxial wafers is the greatest, and the cleaning effect is the most obvious. Therefore, it can be concluded that the cleaning method used by the epitaxial furnace cleaning device of the present invention can clean the residual deposits in the reaction chamber of SiC epitaxial furnace very quickly and effectively.
[0139] As can be seen from the above, this epitaxial furnace cleaning device obtains the silicon carbide information of the graphite parts in the epitaxial furnace reaction chamber before cleaning, sets the epitaxial furnace reaction chamber to a vacuum cleaning environment, adjusts the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state, and uses argon and chlorine trifluoride gas to clean the epitaxial furnace reaction chamber based on preset temperature and pressure ranges, combined with the vacuum cleaning environment and the rotation state of the graphite tray. The device obtains the silicon carbide information after cleaning, and compares the silicon carbide information before and after cleaning to determine the cleaning effect. Therefore, by setting a vacuum environment, maintaining the rotation state of the graphite tray, and adjusting the corresponding temperature and pressure, and using argon and chlorine trifluoride gas to clean the epitaxial furnace, this device solves the problem of existing epitaxial furnace cleaning methods being unable to remove residual, hard silicon carbide particles. It eliminates the cumbersome opening and cleaning process, effectively removes silicon carbide particles, improves epitaxial production efficiency and the service life of graphite parts, and increases the cleaning efficiency of the epitaxial furnace.
[0140] Please refer to Figure 3 , Figure 3 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this application. The electronic device includes a processor 301 and a memory 302. The processor 301 and the memory 302 are interconnected and communicate with each other via a communication bus 303 and / or other connection mechanisms (not shown). The memory 302 stores a computer program executable by the processor 301. When the electronic device is running, the processor 301 executes the computer program to perform the epitaxial furnace cleaning method in any optional implementation of the above embodiments, to achieve the following functions: acquiring silicon carbide information of the graphite parts in the epitaxial furnace reaction chamber before cleaning; setting the epitaxial furnace reaction chamber to a vacuum cleaning environment; adjusting the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state; using argon and chlorine trifluoride gas, based on a preset temperature range and a preset pressure range, combined with the vacuum cleaning environment and the rotation state of the graphite tray, cleaning the epitaxial furnace reaction chamber to obtain silicon carbide information after cleaning; comparing the silicon carbide information before cleaning and the silicon carbide information after cleaning to determine the cleaning effect.
[0141] This application provides a computer-readable storage medium storing a computer program. When the computer program is executed by a processor, it executes the epitaxial furnace cleaning method in any optional implementation of the above embodiments to achieve the following functions: acquiring silicon carbide information of the graphite parts in the epitaxial furnace reaction chamber before cleaning; setting the epitaxial furnace reaction chamber to a vacuum cleaning environment; adjusting the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state; using argon and chlorine trifluoride gas, based on a preset temperature range and a preset pressure range, combined with the vacuum cleaning environment and the rotation state of the graphite tray, cleaning the epitaxial furnace reaction chamber to obtain silicon carbide information after cleaning; comparing the silicon carbide information before cleaning and the silicon carbide information after cleaning to determine the cleaning effect. The storage medium can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read Only Memory (EPROM), Programmable Red-Only Memory (PROM), Read-Only Memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk.
[0142] In the embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. The apparatus embodiments described above are merely illustrative. For example, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. Furthermore, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Additionally, the displayed or discussed mutual couplings, direct couplings, or communication connections may be through some communication interfaces; indirect couplings or communication connections between devices or units may be electrical, mechanical, or other forms.
[0143] Furthermore, the units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment, depending on actual needs.
[0144] Furthermore, the functional modules in the various embodiments of this application can be integrated together to form an independent part, or each module can exist independently, or two or more modules can be integrated to form an independent part.
[0145] In this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, without necessarily requiring or implying any such actual relationship or order between these entities or operations.
[0146] The above description is merely an embodiment of this application and is not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.
Claims
1. A method for cleaning an epitaxial furnace, used for cleaning a silicon carbide epitaxial furnace, characterized in that, Including the following steps: Obtain silicon carbide information of graphite components in the epitaxial furnace reaction chamber before cleaning; The epitaxial furnace reaction chamber is set to a vacuum cleaning environment; The motion state of the graphite tray in the epitaxial furnace reaction chamber is adjusted to a rotating state; Using argon and chlorine trifluoride gas, based on preset temperature and pressure ranges, and combined with the vacuum cleaning environment and the rotation state of the graphite tray, the epitaxial furnace reaction chamber is cleaned to obtain the cleaned silicon carbide information, including: It is determined that the epitaxial furnace reaction chamber is in the vacuum cleaning environment and the graphite tray is in the rotating state; The pressure and temperature of the epitaxial furnace reaction chamber are set within a first pressure range and a first temperature range, and argon gas with a preset first threshold flow rate is input; the preset temperature range includes a first temperature range and a second temperature range; the preset pressure range includes a first pressure range and a second pressure range. Based on the first temperature range and the second pressure range, the epitaxial furnace reaction chamber is cleaned using argon and chlorine trifluoride gas, including a step that is repeated multiple times: Based on the first temperature range and the first pressure range, within a preset first cycle, argon gas at a second threshold flow rate and chlorine trifluoride gas at a preset third threshold flow rate are input into the epitaxial furnace reaction chamber. Adjust the pressure in the epitaxial furnace reaction chamber within the second pressure range, stop the input of chlorine trifluoride gas, and increase the input flow rate of argon gas to the fourth threshold flow rate within the preset second cycle; The pressure and temperature of the epitaxial furnace reaction chamber are adjusted within the standard atmospheric pressure and second temperature range to obtain the cleaned silicon carbide information; The cleaning effect is determined by comparing the silicon carbide information before and after cleaning. Wherein, the first temperature range is 800~900℃; the first pressure range is 800~900mbar; the first threshold flow rate is 2~3slm; the second threshold flow rate is 2000~3000sccm; the third threshold flow rate is 200~300sccm; the first cycle is 2~5min; the second pressure range is 20~50mbar; the fourth threshold flow rate is 20~50slm; the second cycle is 2~3min; and the second temperature range is below 100℃.
2. The epitaxial furnace cleaning method according to claim 1, characterized in that, Before obtaining the silicon carbide information of the graphite components in the epitaxial furnace reaction chamber before cleaning, the process also includes: When the cumulative thickness of the silicon carbide film grown in the epitaxial furnace reaction chamber reaches a preset first thickness, a cleaning program is initiated to clean the epitaxial furnace reaction chamber.
3. The epitaxial furnace cleaning method according to claim 1, characterized in that, Setting the epitaxial furnace reaction chamber to a vacuum cleaning environment includes: Remove the residual gas from the reaction chamber of the epitaxial furnace; A vacuum operation is performed on the epitaxial furnace reaction chamber to obtain a vacuum cleaning environment for the epitaxial furnace reaction chamber.
4. The epitaxial furnace cleaning method according to claim 1, characterized in that, Adjusting the pressure and temperature of the epitaxial furnace reaction chamber within the standard atmospheric pressure and second temperature range yields information on the cleaned silicon carbide, including: Stop the input of argon gas and adjust the pressure and temperature of the epitaxial furnace reaction chamber to the standard atmospheric pressure and second temperature range to end the cleaning process of the epitaxial furnace reaction chamber; Obtain the information of the cleaned silicon carbide in the epitaxial furnace reaction chamber.
5. The epitaxial furnace cleaning method according to claim 1, characterized in that, The cleaning effect is determined by comparing the silicon carbide information before and after cleaning, including: Extract the total number of first particles and the number of first defects on the surface of the epitaxial wafer from the silicon carbide information before cleaning; Extract the total number of second particles and the number of second defects from the epitaxial wafer surface in the cleaned silicon carbide information; The cleaning effect is determined by comparing the total number of the first particles with the total number of the second particles, and by comparing the number of the first defects with the number of the second defects.
6. An epitaxial furnace cleaning device for cleaning a silicon carbide epitaxial furnace, characterized in that, include: The acquisition module is used to acquire silicon carbide information of graphite parts in the epitaxial furnace reaction chamber before cleaning; The setting module is used to set the epitaxial furnace reaction chamber to a vacuum cleaning environment; The adjustment module is used to adjust the movement state of the graphite tray in the epitaxial furnace reaction chamber to a rotating state; The cleaning module utilizes argon and chlorine trifluoride gas, based on preset temperature and pressure ranges, combined with the vacuum cleaning environment and the rotation state of the graphite tray, to clean the epitaxial furnace reaction chamber, obtaining information about the cleaned silicon carbide, including: It is determined that the epitaxial furnace reaction chamber is in the vacuum cleaning environment and the graphite tray is in the rotating state; The pressure and temperature of the epitaxial furnace reaction chamber are set within a first pressure range and a first temperature range, and argon gas with a preset first threshold flow rate is input; the preset temperature range includes a first temperature range and a second temperature range; the preset pressure range includes a first pressure range and a second pressure range. Based on the first temperature range and the second pressure range, the epitaxial furnace reaction chamber is cleaned using argon and chlorine trifluoride gas, including a step that is repeated multiple times: Based on the first temperature range and the first pressure range, within a preset first cycle, argon gas at a second threshold flow rate and chlorine trifluoride gas at a preset third threshold flow rate are input into the epitaxial furnace reaction chamber. Adjust the pressure in the epitaxial furnace reaction chamber within the second pressure range, stop the input of chlorine trifluoride gas, and increase the input flow rate of argon gas to the fourth threshold flow rate within the preset second cycle; The pressure and temperature of the epitaxial furnace reaction chamber are adjusted within the standard atmospheric pressure and second temperature range to obtain the cleaned silicon carbide information; The comparison module is used to compare the silicon carbide information before cleaning with the silicon carbide information after cleaning to determine the cleaning effect; Wherein, the first temperature range is 800~900℃; the first pressure range is 800~900mbar; the first threshold flow rate is 2~3slm; the second threshold flow rate is 2000~3000sccm; the third threshold flow rate is 200~300sccm; the first cycle is 2~5min; the second pressure range is 20~50mbar; the fourth threshold flow rate is 20~50slm; the second cycle is 2~3min; and the second temperature range is below 100℃.
7. An electronic device, characterized in that, It includes a processor and a memory, the memory storing a computer program executable by the processor, and when the processor executes the computer program, it performs the steps in the epitaxial furnace cleaning method as described in any one of claims 1-5.
8. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it performs the steps in the epitaxial furnace cleaning method as described in any one of claims 1-5.