Substrate processing apparatus, electrode, method for manufacturing semiconductor device, and substrate processing method

Abstract

The present invention provides a technology capable of performing more uniform substrate processing. A technology of an electrode for generating plasma having a first electrode group and a second electrode group is provided, the first electrode group is composed of at least one first electrode to which an arbitrary potential is applied, at least one second electrode to which an arbitrary potential is applied and which has a length different from that of the first electrode, and at least one third electrode to which a reference potential is distributed, and the second electrode group is composed of at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode to which an arbitrary potential is applied and which has a length different from that of the fourth electrode, and at least one sixth electrode to which a reference potential is distributed.

Description

Technical Field

[0001] This disclosure relates to a substrate processing apparatus, electrodes, and a method for manufacturing a semiconductor device. Background Technology

[0002] As a step in the manufacturing process of semiconductor devices (equipment), substrate processing is sometimes performed as follows: a substrate is moved into the processing chamber of a substrate processing apparatus, and raw material gas and reaction gas are supplied to the processing chamber to form various films such as insulating films, semiconductor films, and conductor films on the substrate, or various films are removed.

[0003] In mass production equipment that forms fine patterns, low temperatures are sometimes required to suppress the diffusion of impurities or to enable the use of materials with low heat resistance, such as organic materials.

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2007-324477 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] To solve this problem, plasma is generally used for substrate treatment, but it is difficult to achieve uniform treatment of the film.

[0009] The purpose of this disclosure is to provide a technique that enables more uniform substrate processing.

[0010] Methods for solving problems

[0011] According to one aspect of this disclosure, a technique for providing an electrode is provided, the electrode being used to generate plasma, having a first electrode group and a second electrode group, wherein the first electrode group comprises at least one first electrode to which an arbitrary potential is applied, at least one second electrode to which an arbitrary potential is applied and whose length is different from that of the first electrode, and at least one third electrode to which a reference potential is assigned, and the second electrode group comprises at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode to which an arbitrary potential is applied and whose length is different from that of the fourth electrode, and at least one sixth electrode to which a reference potential is assigned.

[0012] The effects of the invention are as follows.

[0013] According to this disclosure, a technique capable of performing more uniform substrate processing can be provided. Attached Figure Description

[0014] Figure 1This is a simplified structural diagram of a vertical processing furnace of a substrate processing apparatus suitably used in embodiments of this disclosure, and is a diagram showing the processing furnace portion in longitudinal section.

[0015] Figure 2 yes Figure 1 A cross-sectional view (AA) of the substrate processing apparatus shown.

[0016] Figure 3 (a) is a perspective view of the electrode of the embodiment of the present disclosure after it is disposed on the electrode holder, and (b) is a diagram showing the positional relationship of the heater, electrode holder, electrode, protrusion for fixing the electrode and reaction tube of the embodiment of the present disclosure.

[0017] Figure 4 (a) is a perspective view of the electrode of the first modified embodiment of the present disclosure, with the electrode of the first modified embodiment of the present disclosure disposed on the electrode fixing member, and (b) is a diagram showing the positional relationship of the heater, electrode fixing member, electrode, protrusion of fixing electrode and reaction tube of the first modified embodiment of the present disclosure.

[0018] Figure 5 (a) is a front view of an electrode according to an embodiment of the present disclosure, and (b) is a diagram illustrating the points where the electrode is fixed to the electrode holder.

[0019] Figure 6 yes Figure 1 The diagram shows a simplified structural diagram of the controller in the substrate processing apparatus, and is also a block diagram illustrating an example of the control system of the controller.

[0020] Figure 7 It shows that it was used Figure 1 A flowchart illustrating an example of a substrate processing process for the substrate processing apparatus shown.

[0021] In the picture:

[0022] 300—Electrode, 300-0—Zero electrode, 300-1—First electrode, 300-2—Second electrode, 300-3—Third electrode. Detailed Implementation

[0023] The following is for reference Figures 1 to 7 Embodiments of this disclosure will be described. Furthermore, the drawings used in the following description are schematic, and the dimensional relationships and ratios of the elements shown in the drawings may not necessarily correspond to reality. Moreover, the dimensional relationships and ratios of the elements may not necessarily be consistent between different drawings.

[0024] (1) Structure of the substrate processing device

[0025] (Heating device)

[0026] like Figure 1 As shown, the processing furnace 202 of the vertical substrate processing apparatus has a heater 207 that functions as a heating device (heating mechanism, heating section). The heater 207 is cylindrical in shape and is vertically mounted by being supported by a holding plate. The heater 207 also functions as an activation mechanism (activation section) that uses heat to activate (excite) gases.

[0027] (Processing Room)

[0028] An electrode holder 301 is disposed inside the heater 207, and an electrode 300 for plasma generation is disposed inside the electrode holder 301. Furthermore, a reaction tube 203 is disposed concentrically with the heater 207 inside the electrode 300. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is disposed concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS) and is formed into a cylindrical shape with open upper and lower ends. The upper end of the manifold 209 engages with the lower end of the reaction tube 203, thus supporting the reaction tube 203. An O-ring 220a, serving as a sealing member, is provided between the manifold 209 and the reaction tube 203. The manifold 209 is supported by the heater base, thereby allowing the reaction tube 203 to be mounted vertically. The processing container (reaction vessel) is mainly composed of the reaction tube 203 and the manifold 209. A processing chamber 201 is formed in the hollow portion of the processing container. The processing chamber 201 is configured to accommodate multiple wafers 200 used as substrates. Furthermore, the processing container is not limited to the structure described above; there are also cases where only the reaction tube 203 is referred to as the processing container.

[0029] (Gas Supply Department)

[0030] Inside the processing chamber 201, nozzles 249a and 249b, serving as first and second supply units, are respectively provided through the side wall of the manifold 209. These nozzles are also referred to as the first nozzle and the second nozzle, respectively. The nozzles 249a and 249b are made of heat-resistant materials such as quartz or SiC. Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively. Thus, by providing two nozzles 249a and 249b and two gas supply pipes 232a and 232b in the processing container, various gases can be supplied to the processing chamber 201. Furthermore, when only the reaction tube 203 is used as the processing container, the nozzles 249a and 249b can also be provided through the side wall of the reaction tube 203.

[0031] In gas supply pipes 232a and 232b, mass flow controllers (MFCs) 241a and 241b, serving as flow controllers (flow control units), and valves 243a and 243b, serving as on / off valves, are sequentially installed from the upstream side of the gas flow. Gas supply pipes 232c and 232d, supplying inert gas, are connected to gas supply pipes 232a and 232b, respectively, downstream of valves 243a and 243b. In gas supply pipes 232c and 232d, MFCs 241c and 241d, and valves 243c and 243d, are sequentially installed from the upstream direction.

[0032] like Figure 1 , Figure 2 As shown, nozzles 249a and 249b are respectively positioned within the annular space between the inner wall of the reaction tube 203 and the wafer 200 (viewed from above), extending upwards along the lower to upper part of the inner wall of the reaction tube 203 towards the loading direction of the wafer 200. That is, nozzles 249a and 249b are respectively provided perpendicularly to the surface (flat surface) of the wafer 200 on the side of the end (peripheral portion) of each wafer 200 that is moved into the processing chamber 201. Gas supply holes 250a and 250b for supplying gas are respectively provided on the side of nozzles 249a and 249b. Gas supply holes 250a open towards the center of the reaction tube 203, thereby enabling gas to be supplied to the wafer 200. Multiple gas supply holes 250a and 250b are provided throughout the lower to upper part of the reaction tube 203.

[0033] Thus, in this embodiment, gas is supplied via nozzles 249a and 249b arranged within a cylindrical space that appears annular in plan view, defined by the inner wall of the sidewall of the reaction tube 203 and the ends (peripherals) of the multiple wafers 200 arranged within the reaction tube 203. Then, near the wafers 200, gas is first ejected into the reaction tube 203 from gas supply holes 250a and 250b, which open at the nozzles 249a and 249b respectively. Furthermore, the main flow of gas within the reaction tube 203 is set in a direction parallel to the surface of the wafers 200, i.e., a horizontal direction. This structure allows for uniform gas supply to each wafer 200, thereby improving the uniformity of the film thickness formed on each wafer 200. The gas flowing over the surface of the wafers 200, i.e., the residual gas after the reaction, flows towards the exhaust port, i.e., the exhaust pipe 231 described below. However, the direction of this residual gas flow is appropriately determined according to the location of the exhaust port and is not limited to a vertical direction.

[0034] Raw materials (raw material gas) are supplied into the processing chamber 201 from the gas supply pipe 232a via MFC 241a, valve 243a, and nozzle 249a.

[0035] For example, oxygen-containing (O) gas is supplied as a reactant (reactant gas) from gas supply pipe 232b via MFC 241b, valve 243b, and nozzle 249b into processing chamber 201.

[0036] Inert gas is supplied to the processing chamber 201 from gas supply pipes 232c and 232d via MFC 241c and 241d, valves 243c and 243d, and nozzles 249a and 249b, respectively.

[0037] The raw material supply system, primarily composed of gas supply pipe 232a, MFC 241a, and valve 243a, serves as the first gas supply system. The reaction gas supply system, primarily composed of gas supply pipe 232b, MFC 241b, and valve 243b, serves as the second gas supply system. The inert gas supply system, primarily composed of gas supply pipes 232c and 232d, MFC 241c and 241d, and valves 243c and 243d, serves as the second gas supply system. The raw material supply system, reaction gas supply system, and inert gas supply system are collectively referred to as the gas supply system (gas supply unit).

[0038] (Substrate support)

[0039] like Figure 1 As shown, the boat 217, serving as a substrate support, is configured to support multiple wafers 200, for example, 25 to 200 wafers, arranged horizontally and aligned at their centers in a vertical direction, in multiple layers. That is, the wafers 200 are arranged with gaps between them. The boat 217 is made of a heat-resistant material such as quartz or SiC. At the lower part of the boat 217, multiple layers of an insulating plate 218, made of a heat-resistant material such as quartz or SiC, are supported. This structure makes it difficult for heat from the heater 207 to transfer to the sealing cover 219. However, this embodiment is not limited to this method. For example, an insulating cylinder made of a heat-resistant material such as quartz or SiC and configured as a cylindrical component may be provided at the lower part of the boat 217, without the insulating plate 218.

[0040] (Plasma Generation Unit)

[0041] Next, use Figures 1 to 5 The plasma generation unit will be explained.

[0042] Electrodes 300 for generating plasma are provided outside the reaction tube 203, i.e., outside the processing container (processing chamber 201). By applying electricity to the electrodes 300, gas can be plasmaized and excited inside the reaction tube 203, i.e., inside the processing container (processing chamber 201), that is, the gas can be excited into a plasma state. Hereinafter, the configuration is such that by simply applying an electric current to excite the gas into a plasma state, capacitively coupled plasma (CCP) is generated inside the reaction tube 203, i.e., inside the processing container (processing chamber 201).

[0043] Specifically, such as Figure 2 As shown, an electrode 300 and an electrode fixing member 301 for fixing the electrode 300 are disposed between the heater 207 and the reaction tube 203. The electrode fixing member 301 is disposed inside the heater 207, the electrode 300 is disposed inside the electrode fixing member 301, and the reaction tube 203 is disposed inside the electrode 300.

[0044] In addition, such as Figure 1 , Figure 2 As shown, the electrode 300 and the electrode holder 301 are respectively positioned within a ring-shaped space between the inner wall of the heater 207 and the outer wall of the reaction tube 203, extending from the lower to the upper part of the outer wall of the reaction tube 203 along the arrangement direction of the wafer 200. The electrode 300 is arranged parallel to the nozzles 249a and 249b. The electrode 300 and the electrode holder 301 are arranged and configured concentrically with the reaction tube 203 and the heater 207 in a non-contact manner with the heater 207. The electrode holder 301 is made of an insulating material (insulator) and is positioned to cover at least a portion of the electrode 300 and the reaction tube 203. Therefore, the electrode holder 301 can also be referred to as a cover (quartz cover, insulating wall, insulating plate) or a cross-sectional arc cover (cross-sectional arc body, cross-sectional arc wall).

[0045] like Figure 2 As shown, multiple electrodes 300 are provided, and these multiple electrodes 300 are fixedly disposed on the inner wall of the electrode fixing member 301. More specifically, as... Figure 5 As shown, the inner wall surface of the electrode holder 301 is provided with a protrusion (hook-shaped portion) 310 for hooking the electrode 300, and the electrode 300 is provided with an opening 305 as a through hole through which the protrusion 310 can be inserted. By hooking the electrode 300 onto the protrusion 310 on the inner wall surface of the electrode holder 301 through the opening 305, the electrode 300 can be fixed to the electrode holder 301. Furthermore, Figure 3 and Figure 4The image shows an example where each electrode 300 has two openings 305, and is fixed by hooking two protrusions 310 onto each electrode 300; that is, an example of fixing one electrode at two locations. Furthermore, Figure 2 An example of the following structure (unit) is shown: nine electrodes 300 are fixed in an electrode fixture 301. The structure (unit) consists of two groups, with three electrodes 300-1, three electrodes 300-2, and three electrodes 300-0 fixed in an electrode fixture 301.

[0046] Electrodes 300 (first electrode 300-1, second electrode 300-2, third electrode 300-3, and zero electrode 300-0) are made of oxidation-resistant materials such as nickel (Ni). Electrodes 300 can also be made of metals such as SUS, aluminum (Al), and copper (Cu), but by using oxidation-resistant materials such as Ni, the degradation of conductivity can be suppressed, thereby suppressing the decrease in plasma generation efficiency. Alternatively, electrodes 300 can be made of a Ni alloy material with added Al. In this case, an alumina film (AlO film), which has high heat resistance and corrosion resistance, can be formed on the outermost surface of the electrode 300. The AlO film formed on the outermost surface of the electrode 300 acts as a protective film (barrier film, isolation film), suppressing the internal degradation of the electrode 300. This further suppresses the decrease in plasma generation efficiency caused by the decrease in conductivity of the electrode 300. The electrode holder 301 is made of an insulating material (insulator), such as a heat-resistant material like quartz or SiC. The electrode holder 301 is preferably made of the same material as the reaction tube 203.

[0047] like Figure 3 of (a) Figure 3 (b) Figure 4 of (a) Figure 4 As shown in (b), electrode 300 includes a first electrode 300-1, a second electrode 300-2, a third electrode 300-3, and a zero electrode 300-0. The first electrode 300-1, the second electrode 300-2, and the third electrode 300-3 are connected to a high-frequency power supply (RF power supply) 320 via a matching connector 325 and are applied with arbitrary potentials. The zero electrode 300-0 is grounded to a reference potential (0V). The first electrode 300-1, the second electrode 300-2, and the third electrode 300-3 are also referred to as Hot electrodes or HOT electrodes, and the zero electrode 300-0 is also referred to as a Ground electrode or GND electrode. The first electrode 300-1, the second electrode 300-2, the third electrode 300-3, and the zero electrode 300-0 are each configured as a plate-shaped component in the front view. Figure 2 and Figure 3In this process, multiple types of electrodes are provided, including the first type 300-1, the second type 300-2, and the zeroth type 300-0. Figure 3 of (a) Figure 3 (b) shows an example with four first type electrodes 300-1, four second type electrodes 300-2 and four zero type electrodes 300-0. Figure 4 of (a) Figure 4 (b) also includes a plurality of third electrodes 300-3, showing an example with four first electrodes 300-1, two second electrodes 300-2, two third electrodes 300-3, and four zero electrodes 300-0. Plasma is generated in the region between the first electrodes 300-1 and the zero electrodes 300-0 by applying RF power from the RF power supply 320 via the matching unit 325 to the region between the first electrodes 300-1 and the zero electrodes 300-0. Similarly, plasma is generated in the region between the second electrodes 300-2 and the zero electrodes 300-0 by applying RF power between the second electrodes 300-2 and the zero electrodes 300-0, and plasma is generated in the region between the third electrodes 300-3 and the zero electrodes 300-0 by applying RF power between the third electrodes 300-3 and the zero electrodes 300-0. These regions are also referred to as plasma generation regions. Furthermore, as... Figure 1 As shown, the electrode 300 is arranged in the vertical direction (vertical direction, direction of the mounting substrate) relative to the processing container, and as... Figures 2 to 4 As shown, when viewed from above, the electrodes 300 are arranged in an arc shape and at equal intervals, that is, the distance (gap) between adjacent electrodes 300 (first electrode 300-1, second electrode 300-2, third electrode 300-3, and zeroth electrode 300-0) is equal. Furthermore, the electrodes 300 are arranged in a generally arc shape between the reaction tube 203 and the heater 207 along the outer wall of the reaction tube 203 when viewed from above, for example, fixedly disposed on the inner wall surface of an electrode holder 301 formed in an arc shape with a central angle of 30 degrees or more and 240 degrees or less. And, as described above, the electrodes 300 are arranged parallel to the nozzles 249a and 249b.

[0048] Here, the electrode fixing member 301 and the electrodes 300 (first type electrode 300-1, second type electrode 300-2, third type electrode 300-3, and zero type electrode 300-0) can also be referred to as electrode units. For example... Figure 2 As shown, the electrode unit is preferably positioned away from the nozzles 249a, 249b and the exhaust pipe 231. Figure 2 An example is shown where two electrode units are arranged facing each other (face-to-face) across the center of the wafer 200 (reaction tube 203), avoiding nozzles 249a, 249b and exhaust pipe 231. Furthermore, Figure 2 The diagram shows an example where two electrode units are arranged in a linearly symmetrical configuration, i.e., symmetrical, with the straight line L as the axis of symmetry when viewed from above. By arranging the electrode units in this way, the nozzles 249a and 249b, the temperature sensor 263, and the exhaust pipe 231 can be positioned outside the plasma generation area within the processing chamber 201, thereby suppressing damage to these components by plasma, consumption of these components, breakage, and the generation of particles from these components. Where no special distinction is required in this disclosure, they will be referred to as electrode 300.

[0049] Plasma (active species) 302 is generated within the reaction tube 203 by inputting a high frequency, for example, 25 MHz or higher and 35 MHz or lower, more specifically 27.12 MHz, to the electrode 300 via a matching converter 325 from a high-frequency power supply 320. Using the plasma generated in this way, plasma 302 for substrate processing can be supplied from around the wafer 200 to the surface of the wafer 200. The power supply is configured to be from the lower side (lower end) of the electrode 300.

[0050] The plasma generation unit (plasma excitation unit, plasma activation mechanism) that excites (activates) gas into a plasma state is mainly composed of electrodes 300, namely the first type of electrode 300-1, the second type of electrode 300-2, the third type of electrode 300-3 and the zero type of electrode 300-0. It is also possible to include electrode fixing member 301, matching device 325 and RF power supply 320 in the plasma generation unit.

[0051] And, as Figure 5 As shown in (a), an opening 305 is formed in the electrode 300. The opening 305 is composed of a circular cut 303 through which the protruding head 311 described below passes and a sliding cut 304 for sliding the protruding shaft 312.

[0052] The electrode 300 has sufficient strength, and its thickness is preferably in the range of 0.1 mm to 1 mm, and its width is preferably in the range of 5 mm to 30 mm, so that the efficiency of the heat source heating the wafer does not decrease significantly. Furthermore, it preferably has a bending structure as a deformation-suppressing part to prevent deformation caused by heating by the heater 207. Since the electrode 300 is positioned between the quartz reaction tube 203 and the heater 207 in this case, the bending angle is appropriately 90° to 175° due to space constraints. A coating formed by thermal oxidation is formed on the electrode surface; sometimes, due to thermal stress, the coating is peeled off, resulting in particles, so care must be taken to avoid excessive bending.

[0053] In the vertical substrate processing apparatus, the frequency of the high-frequency power supply 320 is set to 27.12MHz, and an electrode 300 with a length of 1m and a thickness of 1mm is used to generate CCP mode plasma.

[0054] If the loading range of the wafer 200 loaded into the boat 217 is defined as more than 8% of the output wavelength of the high-frequency power supply 320, then the biased voltage distribution of the standing wave (cosine curve) formed by the overlap of traveling and reflected waves in the longitudinal direction of the electrode 300 will have an impact, thus the density distribution of the plasma 302 will also show a bias. Therefore, non-uniformity will appear between the wafers 200 for film thickness and film quality, which are related to the density distribution of plasma 302.

[0055] As a solution to this problem, the following method is proposed: By adjusting the length of the front end of electrode 300 to change the reflection coefficient, the phase difference between the traveling wave and the reflected wave changes, causing the voltage distribution of the standing wave in the wafer region to shift downwards. By using this method, the bias in the voltage distribution can be improved, ensuring a plasma density distribution with good uniformity 302, thereby improving the uniformity of film thickness and film quality between wafers 200.

[0056] For example, such as Figure 3 of (a) Figure 3 As shown in (b), on the outer wall of the tubular reaction tube 203, four first-type electrodes 300-1 with a width of 12.5 mm and a height of 1650 mm, four second-type electrodes 300-2 with a width of 12.5 mm and a height of 1200 mm, and four zero-type electrodes 300-0 with a width of 12.5 mm and a height of 1650 mm are alternately arranged in the order of first-type electrode 300-1, second-type electrode 300-2, zero-type electrode 300-0, ... . Furthermore, the gaps between the first-type electrode 300-1 and the second-type electrode 300-2, the second-type electrode 300-2 and the zero-type electrode 300-0, and the zero-type electrode 300-0 and the first-type electrode 300-1 are all 7.5 mm.

[0057] like Figure 4 of (a) Figure 4As shown in (b), on the outer wall of the tubular reaction tube 203, four first electrodes 300-1 with a width of 12.5 mm and a height of 1650 mm, two second electrodes 300-2 with a width of 12.5 mm and a height of 1350 mm, two third electrodes 300-3 with a width of 12.5 mm and a height of 1050 mm, and four zero electrodes 300-0 with a width of 12.5 mm and a height of 1650 mm are alternately arranged in the order of first electrode 300-1, second electrode 300-2, zero electrode 300-0, first electrode 300-1, third electrode 300-3, zero electrode 300-0, first electrode 300-1, second electrode 300-2, zero electrode 300-0, ... Furthermore, the gaps between the first electrode 300-1 and the second electrode 300-2, the gap between the second electrode 300-2 and the zero electrode 300-0, the gap between the zero electrode 300-0 and the first electrode 300-1, the gap between the first electrode 300-1 and the third electrode 300-3, and the gap between the third electrode 300-3 and the zero electrode 300-0 are all 7.5 mm.

[0058] exist Figure 3 of (a) Figure 3 (b) and Figure 4 of (a) Figure 4 In any of the figures in (b), the front end position of the upper part of electrode 300 is configured such that the first electrode 300-1 is the same as or lower than the zero electrode 300-0, and the second electrode 300-2 and the third electrode 300-3 are lower than both the first electrode 300-1 and the zero electrode 300-0. More preferably, when the loading range of the wafer 200 loaded into the boat 217 is configured as 12% of the output wavelength of the high-frequency power supply 320, it is appropriate to configure the front end of the second electrode 300-2 and the third electrode 300-3 at a position that is 0.5% to 6% (more than 0.5% and less than 6%) lower than the output wavelength of the high-frequency power supply 320 from the position of the uppermost wafer, and to configure the front end of the zero electrode 300-0 at a position that is the same as or higher than the position of the uppermost wafer. Furthermore, when the second electrode 300-2 and the third electrode 300-3 are positioned at the front end of the uppermost wafer, or when the second electrode 300-2 or the third electrode 300-3 is positioned at a position 6% lower than the output wavelength of the high-frequency power supply 320 from the uppermost wafer, the bias in the voltage distribution of the electrode 300 becomes significant, making it difficult to ensure the uniformity of the plasma density distribution 302.

[0059] Here, with Figure 3 The first electrode 300-1, the second electrode 300-2, and the zero electrode 300-0 shown in (a) Figure 4 Taking the first type of electrode 300-1, the second type of electrode 300-2, the third type of electrode 300-3, and the zeroth type of electrode 300-0 shown in (a) as examples, the following explanation can be given. In addition, each electrode is configured as follows.

[0060] Figure 3 In (a), the three electrodes arranged from the right (first electrode 300-1, second electrode 300-2, and zero electrode 300-0) are designated as the first electrode group. The first electrode group is arranged repeatedly. In the first electrode group, the first electrode 300-1, the second electrode 300-2, and the zero electrode 300-0 are designated as the first electrode, the second electrode, and the third electrode, respectively.

[0061] Figure 4 In (a), the three electrodes arranged from the right (first electrode 300-1, second electrode 300-2, and zero electrode 300-0) are designated as the first electrode group, and the three electrodes further arranged to the left of the first electrode group (first electrode 300-1, third electrode 300-3, and zero electrode 300-0) are designated as the second electrode group. The first electrode group and the second electrode group are arranged alternately. In the first electrode group, the first electrode 300-1, the second electrode 300-2, and the zero electrode 300-0 are designated as the first electrode, the second electrode, and the third electrode, respectively. Furthermore, in the second electrode group, the first electrode 300-1, the third electrode 300-3, and the zero electrode 300-0 are designated as the fourth electrode, the fifth electrode, and the sixth electrode, respectively.

[0062] In the above-described structures of the first to sixth electrodes, the following structure is preferred.

[0063] 1) The length of the second electrode is shorter than the length of the first electrode.

[0064] 2) The length of the fifth electrode is shorter than that of the fourth electrode.

[0065] 3) The length of the fifth electrode is shorter than the length of the second electrode.

[0066] 4) The length of the second electrode is shorter than the length of the third electrode.

[0067] 5) The length of the fifth electrode is shorter than the length of the sixth electrode.

[0068] 6) The length of the first electrode is the same as the length of the fourth electrode.

[0069] 7) The length of the third electrode is the same as the length of the sixth electrode.

[0070] 8) The length of the first electrode is the same as the length of the third electrode.

[0071] 9) The length of the fourth electrode is the same as the length of the sixth electrode.

[0072] 10) The length of the second electrode, which is disposed adjacent to the third electrode, is different from the length of the fourth electrode.

[0073] 11) The first electrode, the second electrode, and the third electrode are arranged in the order of first electrode, second electrode, and third electrode. Furthermore, the fourth electrode, the fifth electrode, and the sixth electrode are arranged in the order of fourth electrode, fifth electrode, and sixth electrode.

[0074] 12) The first, second, and third electrodes are arranged at equal intervals. Furthermore, the fourth, fifth, and sixth electrodes are arranged at equal intervals.

[0075] 13) The center-to-center distance between the first and second electrodes, the center-to-center distance between the second and third electrodes, the center-to-center distance between the fourth and fifth electrodes, and the center-to-center distance between the fifth and sixth electrodes shall be set to 13.0 mm or more and 53.5 mm or less.

[0076] 14) The first electrode, second electrode, third electrode, fourth electrode, fifth electrode, and sixth electrode are arranged in the direction in which the plurality of substrates 200 are loaded and held (the direction perpendicular to the processing chamber 201).

[0077] 15) The front end of the second electrode is positioned lower than the front end of the first electrode.

[0078] 16) The front end of the fifth electrode is positioned lower than the front end of the fourth electrode.

[0079] 17) The front end of the fifth electrode is positioned lower than the front end of the second electrode.

[0080] 18) The front end of the second electrode is positioned lower than the front end of the third electrode.

[0081] 19) The front end of the fifth electrode is positioned lower than the front end of the sixth electrode.

[0082] 20) The front ends of the first electrode and the fourth electrode are positioned at the same height.

[0083] 21) The front ends of the third electrode and the sixth electrode are positioned at the same height.

[0084] 22) The front ends of the second electrode and the fifth electrode are positioned at a position where the output wavelength of the applied high-frequency power supply is reduced by more than 0.5% and less than 6% from the position of the uppermost substrate among the multiple substrates 200 that are loaded and held.

[0085] 23) The frequency of the high-frequency power supply applied to the first electrode, second electrode, fourth electrode and fifth electrode is set to be above 25MHz and below 35MHz.

[0086] 24) The first electrode group and the second electrode group are disposed outside the processing chamber 201 of the processing substrate 200, and are configured to generate plasma inside the processing chamber 201.

[0087] 25) A heating section 207 having a heating substrate 200, wherein a first electrode group and a second electrode group are disposed between the processing chamber 201 and the heating section 207.

[0088] As described above, with an appropriate structure for electrode 300, the electric field generated between the inner wall of the reaction tube 203 near electrode 300 and the wafer 200 is uniformly and strongly distributed. Therefore, the plasma 302 has a high density and is uniformly distributed, which can simultaneously improve the efficiency, quality, and uniformity of substrate processing. Furthermore, when the front ends of the second electrode 300-2 and the third electrode 300-3 are configured at a position that reduces the output wavelength of the high-frequency power supply 320 by 1.5 to 4.5% from the position of the uppermost wafer, even higher efficiency, quality, and uniformity can be achieved simultaneously.

[0089] Here, the furnace pressure during substrate processing is preferably controlled within a range of 10 Pa to 300 Pa. This is because: when the furnace pressure is lower than 10 Pa, the mean free path of gas molecules is longer than the Debye length of plasma, resulting in significant direct impaction of plasma against the furnace wall, making it difficult to suppress particle generation. Furthermore, when the furnace pressure is higher than 300 Pa, plasma generation efficiency saturates, meaning that even with the supply of reactive gas, the plasma generation rate remains unchanged, resulting in wasted reactive gas. Simultaneously, the mean free path of gas molecules shortens, leading to a decrease in the efficiency of plasma-active seed delivery to the wafer.

[0090] (Electrode fixing fixture)

[0091] Next, use Figure 3 and Figure 5 The electrode holder 301, which serves as an electrode fixing clamp for fixing the fixed electrode 300, will be described. For example... Figure 3 (a), (b) Figure 5 As shown in (a) and (b), multiple electrodes 300 are provided with their openings 305 hooked onto protrusions 310 provided on the inner wall surface of an electrode holder 301, which is a curved electrode holder, so as to slide and fix them, and are provided on the outer periphery of the reaction tube 203 in a manner that forms a unit (hook electrode unit) integrally with the electrode holder 301. In addition, quartz and nickel alloy are used as the materials for the electrode holder 301 and the electrodes 300, respectively.

[0092] The electrode holder 301 has sufficient strength, and its thickness is preferably in the range of 1 mm or more and 5 mm or less, so that the efficiency of the heater 207 in heating the wafer will not be significantly reduced. If the thickness of the electrode holder 301 is less than 1 mm, the predetermined strength for the self-weight, temperature changes, etc. of the electrode holder 301 cannot be obtained, and if it is configured to be larger than 5 mm, it will absorb the heat energy emitted from the heater 207, and therefore the wafer 200 cannot be properly heat-treated.

[0093] Furthermore, the electrode holder 301 has multiple protrusions 310 on its inner wall surface, which serves as nail-shaped fixing portions for fixing the electrode 300. Each protrusion 310 consists of a protruding head 311 and a protruding shaft 312. The maximum width of the protruding head 311 is smaller than the diameter of the circular cutout 303 of the opening 305 of the electrode 300, and the maximum width of the protruding shaft 312 is smaller than the width of the sliding cutout 304. The opening 305 of the electrode 300 is shaped like a keyhole, and the sliding cutout 304 guides the protruding shaft 312 during sliding, while the protruding head 311 is designed to prevent it from dislodging from the sliding cutout 304. In other words, the electrode holder can be said to have a fixing portion with a protruding head 311, which is a front end that prevents dislodging from the protruding shaft 312, which serves as a columnar portion for securing the electrode 300. Furthermore, regarding the shape of the opening 305 and the protruding head 311 mentioned above, it is not limited to the shape of the electrode 300 if it can be engaged with the electrode retainer 301. Figure 3 and Figure 5 The shape shown is self-evident. For example, the protruding head 311 could also have a convex shape such as a hammer or spike.

[0094] To maintain a constant distance between the electrode holder 301 or reaction tube 203 and the electrode 300, an elastic body such as a gasket or spring can be provided between them on the electrode holder 301 or electrode 300. This elastic body can also be integrally formed with the electrode holder 301 or electrode 300. In this embodiment, Figure 5 The gasket 330 shown in (b) has a construction that is integrated with the electrode holder 301. Having multiple gaskets 330 relative to a single electrode is effective in keeping the distance between them constant and fixed.

[0095] To achieve high substrate processing capability at substrate temperatures below 500°C, the electrode holder 301 is configured with an approximately arcuate shape, having a central angle of 30° or more and 240° or less. Furthermore, to avoid particle generation, it is preferable to avoid the placement of exhaust pipes 23, nozzles 249a, 249b, etc., which serve as exhaust ports. In other words, the electrode holder 301 is positioned on the outer periphery of the reaction tube 203, except where nozzles 249a, 249b, which serve as gas supply units within the reaction tube 203, and exhaust pipe 231, which serves as a gas exhaust unit. In this embodiment, two electrode holders 301 with a central angle of 110° are arranged symmetrically on both sides.

[0096] (Gasket)

[0097] Next, Figure 5 (a) and (b) show a gasket 330 for fixing the electrode 300 at a constant distance relative to the outer wall of the electrode holder 301, which serves as an electrode fixing clamp, and the reaction tube 203. For example, the gasket 330 is integrally formed with the electrode holder 301 using a cylindrical quartz material, and the electrode 300 is fixed to the electrode holder 301 by abutting against it. If the electrode 300 can be fixed at a constant distance relative to the electrode holder 301 and the reaction tube 203, the gasket 330 can be in any manner and can be integrally formed with either the electrode 300 or the electrode holder 301. For example, the gasket 330 can also be integrally formed with the electrode holder 301 using a semi-cylindrical quartz material to fix the electrode 300, and the gasket 330 can also be integrally formed with the electrode as a metal sheet such as SUS to fix the electrode 300. Regardless, due to the protrusion 310 and the gasket, the electrode 300 is easily positioned, and if the electrode 300 deteriorates, only the electrode 300 can be replaced, thereby reducing costs. Here, the gasket 330 can also be included in the electrode unit described above.

[0098] (Exhaust section)

[0099] The reaction tube 203 is equipped with such Figure 1An exhaust pipe 231 is shown that discharges ambient gas from the processing chamber 201. A vacuum pump 246, serving as a vacuum exhaust device, is connected to the exhaust pipe 231 via a pressure sensor 245 (a pressure detector, or pressure detection unit) and an APC (Auto Pressure Controller) valve 244 (an exhaust valve, or pressure adjustment unit). The APC valve 244 is configured such that by opening and closing the valve while the vacuum pump 246 is operating, vacuum exhaust from the processing chamber 201 can be performed and stopped. Furthermore, while the vacuum pump 246 is operating, the pressure within the processing chamber 201 can be adjusted by regulating the valve opening based on pressure information detected by the pressure sensor 245. The exhaust system mainly consists of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The vacuum pump 246 can also be included in the exhaust system. The exhaust pipe 231 is not limited to being located in the reaction tube 203; it can also be located in the manifold 209, similar to the nozzles 249a and 249b.

[0100] (Peripheral devices)

[0101] Below the manifold 209, a sealing cap 219, serving as a furnace opening cover, is provided to airtightly seal the lower opening of the manifold 209. The sealing cap 219 is configured to abut against the lower end of the manifold 209 from a vertical downward direction. The sealing cap 219 is made of a metal such as SUS and is formed in a disc shape. An O-ring 220b, serving as a sealing member, is provided on the upper surface of the sealing cap 219, abutting against the lower end of the manifold 209.

[0102] On the side of the sealing cover 219 opposite to the processing chamber 201, a rotation mechanism 267 is provided to rotate the boat 217. The rotation shaft 255 of the rotation mechanism 267 passes through the sealing cover 219 and is connected to the boat 217. The rotation mechanism 267 is configured to rotate the wafer 200 by rotating the boat 217. The sealing cover 219 is configured to move vertically up and down via a boat lifter 115, which is vertically disposed outside the reaction tube 203 and serves as a lifting mechanism. The boat lifter 115 is configured to move the boat 217 in and out of the processing chamber 201 by moving the sealing cover 219 up and down.

[0103] The boat lift 115 is configured as a conveying device (conveyor mechanism) for transporting the boat 217, i.e., the wafer 200, to and from the processing chamber 201. Furthermore, a gate 219s, serving as a furnace opening cover, is provided below the manifold 209. This gate 219s can airtightly seal the lower opening of the manifold 209 during the lowering of the sealing cover 219 by the boat lift 115. The gate 219s is made of, for example, a metal such as SUS and is formed in a disc shape. An O-ring 220c, serving as a sealing member, is provided on the upper surface of the gate 219s, abutting against the lower end of the manifold 209. The opening and closing actions (lifting, rotating, etc.) of the gate 219s are controlled by the gate opening and closing mechanism 115s.

[0104] A temperature sensor 263, serving as a temperature detector, is installed inside the reaction tube 203. By adjusting the energization of the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature within the processing chamber 201 is adjusted to achieve the desired temperature distribution. The temperature sensor 263 is arranged along the inner wall of the reaction tube 203, similar to the nozzles 249a and 249b.

[0105] (Control device)

[0106] Next, use Figure 6 The control device should be described. For example... Figure 6 As shown, the controller 121, serving as the control unit (control device), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, such as a touch panel, is connected to the controller 121.

[0107] Storage device 121c is configured such as flash memory, HDD (Hard Disk Drive), SSD (Solid State Drive), etc. Within storage device 121c, control programs that control the operation of the substrate processing apparatus and process recipes that describe the operation sequence and conditions of the film deposition process are stored in a readable manner. The process recipe is a combination of the operation sequences of the various processes (film deposition processes) performed by the substrate processing apparatus by controller 121 in a manner that yields a predetermined result, and functions as a program. Hereinafter, process recipes, control programs, etc., are simply referred to as programs. Furthermore, process recipes are simply referred to as recipes. In this specification, the term "program" may refer only to a single recipe, only to a single control program, or both. RAM 121b is configured as a memory area (working area) that temporarily holds programs, data, etc., read from CPU 121a.

[0108] I / O port 121d is connected to the aforementioned MFC241a-241d, valves 243a-243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotating mechanism 267, boat lift 115, gate opening and closing mechanism 115s, high-frequency power supply 320, etc.

[0109] CPU 121a is configured to read and execute control programs from storage device 121c, and to read recipes from storage device 121c based on input of operation instructions from input / output device 122. CPU 121a is configured to control the rotation mechanism 267, the flow rate adjustment of various gases by MFCs 241a to 241d, the opening and closing of valves 243a to 243d, the opening and closing of APC valve 244, the pressure adjustment of APC valve 244 based on pressure sensor 245, the start and stop of vacuum pump 246, the temperature adjustment of heater 207 based on temperature sensor 263, the forward and reverse rotation, rotation angle and rotation speed adjustment of boat 217 by rotation mechanism 267, the lifting and lowering of boat 217 by boat lifter 115, the opening and closing of gate 219s by gate opening and closing mechanism 115s, and the power supply of high-frequency power supply 320, etc., according to the read recipe.

[0110] The controller 121 is configured to install the aforementioned program stored in an external storage device (such as a hard disk, optical disc, MO disk, or USB memory) 123 onto a computer. The storage device 121c and the external storage device 123 constitute a recording medium that can be read by a computer. Hereinafter, they will be collectively referred to as recording media. The term "recording medium" may be used in this specification in cases where only the storage device 121c is included, in cases where only the external storage device 123 is included, or in cases where both are included. Furthermore, the program may be provided to the computer using communication means such as the Internet or a dedicated line without using the external storage device 123.

[0111] (2) Substrate processing process

[0112] use Figure 7 An example of a process for forming a film on a substrate as a step in the manufacturing process of a semiconductor device (equipment) using the substrate processing apparatus described above will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

[0113] For ease of explanation, the following diagrams are sometimes shown in this specification. Figure 7 The sequence of film-forming processes is shown. The same description is used in the following descriptions of variations and other embodiments.

[0114] (Raw material gas → Reactant gas) × n

[0115] In this specification, the term "wafer" can refer to the wafer itself or to a laminate of the wafer and predetermined layers, films, etc., formed on its surface. Similarly, the term "surface of the wafer" can refer to the surface of the wafer itself or to the surface of predetermined layers, films, etc., formed on the wafer. The term "substrate" has the same meaning as "wafer" in this specification.

[0116] (Moving in step: S1)

[0117] If multiple wafers 200 are loaded (wafer loading) into the boat 217, the gate opening and closing mechanism 115s moves the gate 219s, opening the lower end of the manifold 209 (gate opening). Then, as... Figure 1 As shown, a boat 217 supporting multiple wafers 200 is lifted by a boat lifter 115 and moved into the processing chamber 201 (boat loading). In this state, the sealing cap 219 seals the lower end of the manifold 209 via an O-ring 220b.

[0118] (Pressure and temperature adjustment steps: S2)

[0119] Vacuum pump 246 performs vacuum venting (pressure reduction venting) to bring the interior of processing chamber 201 to the desired pressure (vacuum level). At this time, the pressure inside processing chamber 201 is measured by pressure sensor 245, and APC valve 244 is controlled by feedback (pressure adjustment) based on this measured pressure information. Vacuum pump 246 remains operational at least until the completion of the film formation step described below.

[0120] Furthermore, the processing chamber 201 is heated by the heater 207 to achieve the desired temperature. At this time, the energization of the heater 207 is controlled by feedback (temperature adjustment) based on temperature information detected by the temperature sensor 263 to achieve the desired temperature distribution within the processing chamber 201. The heating of the processing chamber 201 by the heater 207 continues at least until the completion of the film formation step described below. However, if the film formation step is performed at a temperature below room temperature, heating of the processing chamber 201 by the heater 207 may not be necessary. Furthermore, if only processing at such temperatures is performed, the heater 207 is not required, and it may not be necessary to install the heater 207 in the substrate processing apparatus. In this case, the structure of the substrate processing apparatus can be simplified.

[0121] Next, the boat 217 and the wafer 200 are rotated by the rotation mechanism 267. The rotation of the boat 217 and the wafer 200 by the rotation mechanism 267 continues at least until the end of the film formation step described below.

[0122] (Film-forming steps: S3, S4, S5, S6)

[0123] Then, the film-forming step is performed by sequentially executing steps S3, S4, S5, and S6.

[0124] (Raw gas supply steps: S3, S4)

[0125] In step S3, raw material gas is supplied to the wafer 200 in the processing chamber 201.

[0126] Open valve 243a to allow the raw material gas to flow into gas supply pipe 232a. The raw material gas, with its flow rate adjusted by MFC 241a, is supplied to processing chamber 201 via nozzle 249a from gas supply port 250a, and then discharged from exhaust pipe 231. At this time, raw material gas is supplied to wafer 200. Simultaneously, valve 243c can also be opened to allow inert gas to flow into gas supply pipe 232c. The inert gas, with its flow rate adjusted by MFC 241c, is supplied to processing chamber 201 along with the raw material gas, and then discharged from exhaust pipe 231.

[0127] In addition, to prevent the raw material gas from entering the nozzle 249b, the valve 243d can be opened to allow the inert gas to flow into the gas supply pipe 232d. The inert gas is supplied to the processing chamber 201 through the gas supply pipe 232d and the nozzle 249b, and then discharged from the exhaust pipe 231.

[0128] The following conditions are examples of the processing conditions in this step.

[0129] Processing temperature: room temperature (25℃) to 550℃, preferably 400 to 500℃

[0130] Processing pressure: 1–4000 Pa, preferably 100–1000 Pa

[0131] Raw material gas supply flow rate: 0.1~3slm

[0132] Raw material gas supply time: 1–100 seconds, preferably 1–50 seconds

[0133] Inert gas supply flow rate (per gas supply pipe): 0–10 slm

[0134] Furthermore, the expression "25~550℃" in this specification means that both the lower and upper limits are included within this range. Thus, for example, "25~550℃" means "above 25℃ and below 550℃". The same applies to other numerical ranges. Also, the processing temperature in this specification means the temperature of the wafer 200 or the temperature inside the processing chamber 201, and the processing pressure means the pressure inside the processing chamber 201. Furthermore, a gas supply flow rate of 0 slm means that no gas is supplied. This is also true in the following description.

[0135] A first layer is formed on the wafer 200 (the substrate film on the surface) by supplying a raw material gas to the wafer 200 under the conditions described above. For example, if a silicon-containing gas is used as the raw material gas, a silicon-containing layer is formed as the first layer.

[0136] After the first layer is formed, valve 243a is closed, stopping the supply of raw material gas to the processing chamber 201. At this time, APC valve 244 remains open, and vacuum pump 246 vents the processing chamber 201 to remove unreacted gases, raw material gases that contribute to the formation of the first layer, and reaction byproducts remaining in the processing chamber 201 (S4). Then, valves 243c and 243d are opened to supply inert gas to the processing chamber 201. The inert gas acts as a purification gas.

[0137] As raw material gases, for example, tetra(dimethylamino)silane (Si[N(CH3)2]4, abbreviated as 4DMAS) gas, tri(dimethylamino)silane (Si[N(CH3)2]3H, abbreviated as 3DMAS) gas, bis(dimethylamino)silane (Si[N(CH3)2]2H2, abbreviated as BDMAS) gas, bis(diethylamino)silane (Si[N(C2H5)2]2H2, abbreviated as BDEAS) gas, bis(tert-butylamino)silane (SiH2[NH(C4H9)]2, abbreviated as BTBAS) gas, and (diisopropylamino)silane (SiH3[N(C3H7)2], abbreviated as DIPAS) gas, etc., aminosilane-based gases can be used as raw material gases, and one or more of the above gases can be used.

[0138] Furthermore, as raw materials, chlorosilane gases such as monochlorosilane (SiH3Cl, abbreviated as MCS), dichlorosilane (SiH2Cl2, abbreviated as DCS), trichlorosilane (SiHCl3, abbreviated as TCS), tetrachlorosilane (SiCl4, abbreviated as STC), hexachlorosilane (Si2Cl6, abbreviated as HCDS), and octachlorotrisilane (Si3Cl8, abbreviated as OCTS) can also be used; fluorosilane gases such as tetrafluorosilane (SiF4) and difluorosilane (SiH2F2) can be used; bromosilane gases such as tetrabromosilane (SiBr4) and dibromosilane (SiH2Br2) can be used; and iodosilane gases such as tetraiodosilane (SiI4) and diiodosilane (SiH2I2) can also be used. That is, halosilane gases can be used as raw material gases. One or more of the above-mentioned gases can be used as raw material gases.

[0139] Furthermore, as the feed gas, silicon hydride gases such as silane (SiH4, abbreviated as MS), silane (Si2H6, abbreviated as DS), and propane (Si3H8, abbreviated as TS) can be used. One or more of the above gases can be used as the feed gas.

[0140] As inert gases, rare gases such as nitrogen (N2), argon (Ar), helium (He), neon (Ne), and xenon (Xe) can be used. This is also true in the following steps.

[0141] (Reaction gas supply steps: S5, S6)

[0142] After the film formation process is completed, the wafer 200 in the processing chamber 201 is supplied with a reaction gas that excites the plasma (S5).

[0143] In this step, valves 243b to 243d are controlled to open and close in the same sequence as valves 243a, 243c, and 243d in step S3. The reaction gas, with flow rate adjusted by MFC 241b, is supplied to the processing chamber 201 via nozzle 249b from gas supply port 250b. At this time, high-frequency power (RF power, in this embodiment, 27.12 MHz) is supplied (applied) to electrode 300 from high-frequency power supply 320. The reaction gas supplied to the processing chamber 201 is excited into a plasma state inside the processing chamber 201, supplied to wafer 200 as an active species, and then discharged from exhaust pipe 231.

[0144] The following conditions are examples of the processing conditions in this step.

[0145] Processing temperature: room temperature (25°C) to 550°C, preferably 400 to 500°C.

[0146] Processing pressure: 1–300 Pa, preferably 10–100 Pa

[0147] Reactant gas supply flow rate: 0.1–10 slm

[0148] Reaction gas supply time: 1–100 seconds, preferably 1–50 seconds

[0149] Inert gas supply flow rate (per gas supply pipe): 0–10 slm

[0150] RF power: 50~1000W

[0151] RF frequency: 27.12MHz

[0152] By exciting the reactive gas into a plasma state under the above conditions and supplying it to the wafer 200, the first layer formed on the surface of the wafer 200 is modified by utilizing the ions and electrically neutral active species generated in the plasma, and the first layer is modified into the second layer.

[0153] When an oxidizing gas (oxidant) such as oxygen (O) is used as the reactant, O-containing gas is excited into a plasma state to generate O-containing active species, which are then supplied to the wafer 200. In this case, the O-containing active species are used as a modification treatment to oxidize the first layer formed on the surface of the wafer 200. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0154] Furthermore, when using a nitriding gas (nitriding agent) such as a nitrogen (N) and hydrogen (H) gas as the reactant gas, N and H-containing gases are excited into a plasma state to generate N and H-containing active species, which are then supplied to the wafer 200. In this case, the N and H-containing active species are used as a modification treatment to nitrid the first layer formed on the surface of the wafer 200. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer is modified into a silicon nitride layer (SiN layer) as the second layer.

[0155] After modifying the first layer into the second layer, valve 243b is closed to stop the supply of reaction gas. Furthermore, the supply of RF power to electrode 300 is stopped. Additionally, the reaction gas and reaction byproducts remaining in processing chamber 201 are removed from processing chamber 201 using the same processing operation sequence and conditions as in step S4 (S6).

[0156] As described above, gases containing O, N, and H can be used as reactant gases. Examples of O-containing gases include oxygen (O2), nitrous oxide (N2O), nitric oxide (NO), nitrogen dioxide (NO2), ozone (O3), hydrogen peroxide (H2O2), water vapor (H2O), ammonium hydroxide (NH4(OH)), carbon monoxide (CO), and carbon dioxide (CO2). Examples of N and H-containing gases include ammonia (NH3), diimine (N2H2), hydrazine (N2H4), and N3H8. One or more of the above gases can be used as reactant gases.

[0157] As an inert gas, various gases, such as those exemplified in step S4, can be used.

[0158] (Number of scheduled executions: S7)

[0159] The process of performing steps S3, S4, S5, and S6 in this order, rather than simultaneously (i.e., asynchronously), is considered as a loop. By performing this loop a predetermined number of times (n times, where n is an integer greater than or equal to 1), i.e., performing one or more loops, a film with a predetermined composition and a predetermined thickness can be formed on the wafer 200. Preferably, the above-described loop is repeated multiple times. That is, preferably, the thickness of the first layer formed in one loop is smaller than the desired film thickness, and the above-described loop is repeated multiple times until the film thickness formed by laminating the second layer reaches the desired film thickness. Furthermore, if, for example, a Si-containing layer is formed as the first layer and a SiO layer is formed as the second layer, a silicon oxide film (SiO film) is formed as the film. And, if, for example, a Si-containing layer is formed as the first layer and a SiN layer is formed as the second layer, a silicon nitride film (SiN film) is formed as the film.

[0160] (Atmospheric pressure restoration step: S8)

[0161] After the above film-forming process is completed, inert gas is supplied into the processing chamber 201 through gas supply pipes 232c and 232d, and then exhausted through exhaust pipe 231. Thus, the processing chamber 201 is purified by inert gas, removing residual reaction gases and other contaminants (inert gas purification). Afterwards, the ambient gas in the processing chamber 201 is replaced with inert gas (inert gas replacement), and the pressure inside the processing chamber 201 is restored to atmospheric pressure (atmospheric pressure restoration: S8).

[0162] (Moving out step: S9)

[0163] Next, the sealing cap 219 is lowered by the boat lifter 115, the lower end of the manifold 209 opens, and the processed wafer 200, supported by the boat 217, is moved from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat removal). After the boat is removed, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s via the O-ring 220c (gate closing). After being moved to the outside of the reaction tube 203, the processed wafer 200 is removed by the boat 217 (wafer discharge). Alternatively, after the wafer is discharged, an empty boat 217 can be moved into the processing chamber 201.

[0164] Here, the furnace pressure during substrate processing is preferably controlled within a range of 10 Pa to 300 Pa. This is because: when the furnace pressure is lower than 10 Pa, the mean free path of gas molecules is longer than the Debye length of plasma, resulting in significant direct impaction of plasma against the furnace wall, making it difficult to suppress particle generation. Furthermore, when the furnace pressure is higher than 300 Pa, plasma generation efficiency saturates, meaning that even with the supply of reactive gas, the plasma generation rate remains unchanged, resulting in wasted reactive gas. Simultaneously, the mean free path of gas molecules shortens, leading to a decrease in the efficiency of plasma-active seed delivery to the wafer.

[0165] (3) Effects of this implementation method

[0166] By defining the area of ​​the wafer 200 loaded in the boat 217 as 12% of the output wavelength of the high-frequency power supply 320, the front ends of the second electrode 300-2 and the third electrode 300-3 are formed at positions where the output wavelength of the high-frequency power supply 320 is reduced by 0.5 to 6% from the position of the top wafer, and the front end of the zero electrode 300-0 is formed at a position at the same or higher than the position of the top wafer. As a result, the electric field generated between the inner wall of the reaction tube 203 near the electrode 300 and the wafer 200 is uniformly and strongly distributed in the longitudinal direction (direction of the substrate loading), and the plasma 302 has a high density and is uniformly distributed in the longitudinal direction, which can simultaneously improve the efficiency and quality of substrate processing and the uniformity between substrates.

[0167] The embodiments of this disclosure have been described in detail above. However, this disclosure is not limited to the embodiments described above, and various modifications can be made without departing from its spirit.

[0168] Furthermore, for example, in the embodiments described above, an example of supplying the reactant after supplying the raw materials was given. This disclosure is not limited to this method; the supply order of the raw materials and reactant can also be reversed. That is, the raw materials can also be supplied after the reactant. By changing the supply order, the membrane quality and composition ratio of the formed membrane can be varied.

[0169] This disclosure can be appropriately applied not only to the formation of SiO films and SiN films on wafer 200, but also to the formation of Si-based oxide films such as silicon oxycarbonate films (SiOC films), silicon oxycarbonate films (SiOCN films), and silicon oxynitride films (SiON films) on wafer 200.

[0170] For example, in addition to the gases mentioned above, or based on the gases mentioned above, nitrogen-containing (N) gases such as ammonia (NH3), carbon-containing (C) gases such as propylene (C3H6), and boron-containing (B) gases such as boron trichloride (BCl3) can be used to form, for example, SiN films, SiON films, SiOCN films, SiOC films, SiCN films, SiBN films, SiBCN films, BCN films, etc. Furthermore, the order of gas flow can be appropriately changed. Even when performing the above-described film formation, film formation can be carried out under the same processing conditions as in the above-described embodiments, thereby obtaining the same effects as in the above-described embodiments. In the above case, the above-described reaction gases can be used as the oxidant for the reaction gases.

[0171] Furthermore, this disclosure can also be appropriately applied to the formation of metal-based oxide films and metal-based nitride films containing metallic elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), and tungsten (W) on wafer 200. That is, this disclosure can also be appropriately applied to the formation of TiO films, TiOC films, TiOCN films, TiON films, TiN films, TiSiN films, TiBN films, TiBCN films, ZrO films, ZrOC films, ZrOCN films, ZrON films, ZrN films, ZrSiN films, ZrBN films, ZrBCN films, HfO films, HfOC films, HfOCN films, HfON films, HfN films, HfSiN films, HfBN films, HfBCN films, TaO films, TaOC films, TaOCN films, TaON films, TaN films, and TaSiN films on wafer 200. The following types of membranes are mentioned: TaBN membrane, TaBCN membrane, NbO membrane, NbOC membrane, NbOCN membrane, NbON membrane, NbN membrane, NbSiN membrane, NbBN membrane, NbBCN membrane, AlO membrane, AlOC membrane, AlOCN membrane, AlON membrane, AlN membrane, AlSiN membrane, AlBN membrane, AlBCN membrane, MoO membrane, MoOC membrane, MoOCN membrane, MoON membrane, MoN membrane, MoSiN membrane, MoBN membrane, MoBCN membrane, WO membrane, WOC membrane, WOCN membrane, WON membrane, WN membrane, WSiN membrane, WBN membrane, WBCN membrane, etc.

[0172] In the above cases, for example, tetra(dimethylamino)titanium (Ti[N(CH3)2]4, abbreviated as TDMAT) gas, tetra(ethylmethylamino)hafnium (Hf[N(C2H5)(CH3)]4, abbreviated as TEMAH) gas, tetra(ethylmethylamino)zirconium (Zr[N(C2H5)(CH3)]4, abbreviated as TEMAZ) gas, trimethylaluminum (Al(CH3)3, abbreviated as TMA) gas, titanium tetrachloride (TiCl4) gas, hafnium tetrachloride (HfCl4) gas, etc. can be used as raw material gases.

[0173] That is, this disclosure can be appropriately applied to the formation of semi-metallic films containing semi-metallic elements and metallic films containing metallic elements. The processing sequence and conditions of the film-forming process described above can be set to the same processing sequence and conditions as those shown in the film-forming processes of the embodiments and variations described above. In the above cases, the same effects as in the embodiments described above are also obtained.

[0174] The formulations used in the film formation process are preferably prepared individually according to the processing requirements and pre-stored in the storage device 121c via a telecommunication line and external storage device 123. Furthermore, when starting various processes, the CPU 121a preferably selects a suitable formulation from among the multiple formulations stored in the storage device 121c according to the processing requirements. This allows for the general and reproducible formation of thin films of various types, compositions, qualities, and thicknesses using a single substrate processing apparatus. It also reduces operator workload, preventing operational errors and enabling rapid initiation of various processes.

[0175] The aforementioned formula is not limited to newly created formulations; for example, it can be prepared by modifying an existing formula already installed in the substrate processing apparatus. In the case of a modified formula, the modified formula can also be installed into the substrate processing apparatus via a telecommunication line or a recording medium containing the formula. Furthermore, the existing formula already installed in the substrate processing apparatus can be modified directly by operating the input / output device 122 of the existing substrate processing apparatus.

[0176] <Preferred methods of this disclosure>

[0177] The following are preferred embodiments disclosed in this appendix.

[0178] (Note 1)

[0179] According to one aspect of this disclosure, an electrode is provided for generating plasma, wherein...

[0180] The electrode has a first electrode group and a second electrode group. The first electrode group consists of at least one first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied and whose length is different from that of the first electrode, and at least one third electrode to which a reference potential is assigned. The second electrode group consists of at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode to which an arbitrary potential is applied and whose length is different from that of the fourth electrode, and at least one sixth electrode to which a reference potential is assigned.

[0181] (Note 2)

[0182] In the electrodes described in Appendix 1, the preferred type is...

[0183] The length of the second electrode is shorter than the length of the first electrode.

[0184] (Note 3)

[0185] In the electrodes of Appendix 1 or Appendix 2, preferably,

[0186] The length of the fifth electrode is shorter than the length of the fourth electrode.

[0187] (Note 4)

[0188] Among the electrodes specified in any of Appendices 1 to 3, the preferred option is...

[0189] The length of the fifth electrode is shorter than the length of the second electrode.

[0190] (Note 5)

[0191] Of the electrodes described in any of Appendices 1 to 4, the preferred choice is...

[0192] The length of the second electrode is shorter than the length of the third electrode.

[0193] (Note 6)

[0194] Of the electrodes described in any of Appendices 1 to 5, the preferred choice is...

[0195] The length of the fifth electrode is shorter than the length of the sixth electrode.

[0196] (Note 7)

[0197] Of the electrodes listed in any of Appendices 1 to 6, the preferred option is...

[0198] The length of the first electrode is the same as the length of the fourth electrode.

[0199] (Postscript 8)

[0200] Of the electrodes listed in any of Appendices 1 to 7, the preferred option is...

[0201] The length of the third electrode is the same as the length of the sixth electrode.

[0202] (Note 9)

[0203] Of the electrodes listed in any of Appendices 1 to 8, the preferred option is...

[0204] The length of the first electrode is the same as the length of the third electrode.

[0205] (Postscript 10)

[0206] Of the electrodes listed in any of Appendices 1 to 9, the preferred option is...

[0207] The length of the fourth electrode is the same as the length of the sixth electrode.

[0208] (Postscript 11)

[0209] Of the electrodes listed in any of Appendices 1 to 10, the preferred choice is...

[0210] The length of the second electrode, which is located next to the third electrode, is different from the length of the fourth electrode.

[0211] (Postscript 12)

[0212] Of the electrodes in any of the appendices 1 to 11, the preferred choice is...

[0213] The first electrode, the second electrode, and the third electrode are arranged in the order of the first electrode, the second electrode, and the third electrode, and the fourth electrode, the fifth electrode, and the sixth electrode are arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode.

[0214] (Postscript 13)

[0215] Of the electrodes listed in any of Appendices 1 to 12, the preferred choice is...

[0216] The first electrode, the second electrode, and the third electrode are arranged at equal intervals, and the fourth electrode, the fifth electrode, and the sixth electrode are arranged at equal intervals.

[0217] (Postscript 14)

[0218] Of the electrodes in any of the appendices 1 to 13, the preferred choice is...

[0219] The center-to-center distance between the first electrode and the second electrode, the center-to-center distance between the second electrode and the third electrode, the center-to-center distance between the fourth electrode and the fifth electrode, and the center-to-center distance between the fifth electrode and the sixth electrode are set to be 13.0 mm or more and 53.5 mm or less.

[0220] (Postscript 15)

[0221] Of the electrodes listed in any of Appendices 1 to 14, the preferred choice is...

[0222] The first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode are arranged in a direction (perpendicular to the processing chamber) in which multiple substrates are loaded and held.

[0223] (Postscript 16)

[0224] Of the electrodes listed in any of Appendices 1 to 15, the preferred choice is...

[0225] The front end of the second electrode is positioned lower than the front end of the first electrode.

[0226] (Postscript 17)

[0227] Of the electrodes listed in any of Appendices 1 to 16, the preferred choice is...

[0228] The front end of the fifth electrode is positioned lower than the front end of the fourth electrode.

[0229] (Postscript 18)

[0230] Of the electrodes listed in any of Appendices 1 to 17, the preferred choice is...

[0231] The front end of the fifth electrode is positioned lower than the front end of the second electrode.

[0232] (Postscript 19)

[0233] Of the electrodes listed in any of Appendices 1 to 18, the preferred choice is...

[0234] The front end of the second electrode is positioned lower than the front end of the third electrode.

[0235] (Postscript 20)

[0236] Of the electrodes listed in any of Appendices 1 to 19, the preferred choice is...

[0237] The front end of the fifth electrode is positioned lower than the front end of the sixth electrode.

[0238] (Postscript 21)

[0239] Of the electrodes listed in any of Appendices 1 to 20, the preferred type is...

[0240] The front ends of the first electrode and the fourth electrode are positioned at the same height.

[0241] (Postscript 22)

[0242] Of the electrodes in any of the appendices 1 to 21, the preferred choice is...

[0243] The front ends of the third electrode and the sixth electrode are positioned at the same height.

[0244] (Postscript 23)

[0245] Of the electrodes listed in any of Appendices 1 to 22, the preferred choice is...

[0246] The front ends of the second electrode and the fifth electrode are positioned at a position that reduces the output wavelength of the applied high-frequency power supply by more than 0.5% and less than 6% from the position of the uppermost substrate among the plurality of substrates that are loaded and held.

[0247] (Postscript 24)

[0248] Of the electrodes listed in any of Appendices 1 to 23, the preferred choice is...

[0249] The frequency of the high-frequency power supply applied to the first electrode, the second electrode, the fourth electrode, and the fifth electrode is set to be 25MHz or higher and 35MHz or lower.

[0250] (Postscript 25)

[0251] Of the electrodes listed in any of Appendices 1 to 24, the preferred choice is...

[0252] The first electrode group and the second electrode group are located outside the processing chamber of the processing substrate, and are configured to generate plasma inside the processing chamber.

[0253] (Postscript 26)

[0254] Of the electrodes listed in any of Appendices 1 to 25, the preferred choice is...

[0255] A heating element with a heating substrate.

[0256] The first electrode group and the second electrode group are disposed between the processing chamber and the heating section.

[0257] (Postscript 27)

[0258] According to one aspect of this disclosure, a substrate processing apparatus is provided, comprising:

[0259] Processing chamber, its processing substrate; and

[0260] The plasma generating unit is an electrode for generating plasma, having a first electrode group and a second electrode group. The first electrode group consists of at least one first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied and whose length is different from that of the first electrode, and at least one third electrode to which a reference potential is assigned. The second electrode group consists of at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode to which an arbitrary potential is applied and whose length is different from that of the fourth electrode, and at least one sixth electrode to which a reference potential is assigned.

[0261] (Postscript 28)

[0262] According to one scheme of this disclosure

[0263] A substrate processing apparatus is provided having electrodes according to any one of Appendix 1 to 26.

[0264] (Postscript 29)

[0265] According to one aspect of this disclosure, a method for manufacturing a semiconductor device is provided, comprising:

[0266] A process of transferring a substrate into a processing chamber of a substrate processing apparatus, the substrate processing apparatus comprising a processing chamber for processing the substrate and a plasma generation unit, the plasma generation unit being electrodes for generating plasma, having a first electrode group and a second electrode group. The first electrode group comprises at least one first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied and whose length is different from the length of the first electrode, and at least one third electrode to which a reference potential is assigned. The second electrode group comprises at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode to which an arbitrary potential is applied and whose length is different from the length of the fourth electrode, and at least one sixth electrode to which a reference potential is assigned; and

[0267] The process of generating plasma in the above-mentioned processing chamber by a plasma generation unit.

[0268] (Note 30)

[0269] According to one aspect of this disclosure, a substrate processing method is provided, comprising:

[0270] A process of transferring a substrate into a processing chamber of a substrate processing apparatus, the substrate processing apparatus comprising a processing chamber for processing the substrate and a plasma generation unit, the plasma generation unit being electrodes for generating plasma, having a first electrode group and a second electrode group. The first electrode group comprises at least one first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied and whose length is different from the length of the first electrode, and at least one third electrode to which a reference potential is assigned. The second electrode group comprises at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode to which an arbitrary potential is applied and whose length is different from the length of the fourth electrode, and at least one sixth electrode to which a reference potential is assigned; and

[0271] The process of generating plasma in the above-mentioned processing chamber by a plasma generation unit.

[0272] (Postscript 31)

[0273] According to one aspect of this disclosure, a program is provided that causes a substrate processing apparatus to perform the following sequence of operations via a computer:

[0274] The operation sequence of moving a substrate into the processing chamber of a substrate processing apparatus, which includes a processing chamber for processing the substrate and a plasma generation unit, wherein the plasma generation unit comprises electrodes for generating plasma and has a first electrode group and a second electrode group. The first electrode group consists of at least one first electrode to which an arbitrary potential is applied, a second electrode to which an arbitrary potential is applied and whose length is different from that of the first electrode, and at least one third electrode to which a reference potential is assigned. The second electrode group consists of at least one fourth electrode to which an arbitrary potential is applied, at least one fifth electrode to which an arbitrary potential is applied and whose length is different from that of the fourth electrode, and at least one sixth electrode to which a reference potential is assigned.

[0275] The operation sequence in which plasma is generated by the plasma generation unit in the above-mentioned processing chamber.

Claims

1. A substrate processing apparatus, characterized in that, have: The processing chamber, which processes the substrate; as well as The plasma generating unit, which is an electrode for generating plasma, has a first electrode group and a second electrode group. The first electrode group consists of at least one first electrode connected to a high-frequency power supply and subjected to an arbitrary potential, a second electrode connected to a high-frequency power supply and subjected to an arbitrary potential and shorter than the first electrode, and at least one third electrode assigned a reference potential and having the same length as the first electrode. The second electrode group consists of at least one fourth electrode connected to a high-frequency power supply and subjected to an arbitrary potential, at least one fifth electrode connected to a high-frequency power supply and subjected to an arbitrary potential and shorter than the fourth electrode, and at least one sixth electrode assigned a reference potential and having the same length as the fourth electrode. The first electrode, the second electrode, and the third electrode are arranged in the order of the first electrode, the second electrode, and the third electrode, and the fourth electrode, the fifth electrode, and the sixth electrode are arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode. The length directions of the first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode are arranged in the direction in which the plurality of substrates are loaded and held.

2. The substrate processing apparatus according to claim 1, characterized in that, The length of the fifth electrode is shorter than the length of the second electrode.

3. The substrate processing apparatus according to claim 1, characterized in that, The length of the second electrode is shorter than the length of the third electrode.

4. The substrate processing apparatus according to claim 1, characterized in that, The length of the fifth electrode is shorter than the length of the sixth electrode.

5. The substrate processing apparatus according to claim 1, characterized in that, The length of the first electrode is the same as the length of the fourth electrode.

6. The substrate processing apparatus according to claim 1, characterized in that, The length of the third electrode is the same as the length of the sixth electrode.

7. The substrate processing apparatus according to claim 1, characterized in that, The length of the second electrode, which is located next to the third electrode, is different from the length of the fourth electrode.

8. The substrate processing apparatus according to claim 1, characterized in that, The first electrode, the second electrode, and the third electrode are arranged at equal intervals, and the fourth electrode, the fifth electrode, and the sixth electrode are arranged at equal intervals.

9. The substrate processing apparatus according to claim 1, characterized in that, The center-to-center distance between the first electrode and the second electrode, the center-to-center distance between the second electrode and the third electrode, the center-to-center distance between the fourth electrode and the fifth electrode, and the center-to-center distance between the fifth electrode and the sixth electrode are set to be 13.0 mm or more and 53.5 mm or less.

10. The substrate processing apparatus according to claim 1, characterized in that, When the loading range of the plurality of substrates is configured to be 12% of the output wavelength of the aforementioned high-frequency power supply, the upper front end of the second electrode and the upper front end of the fifth electrode are positioned at a position where the output wavelength of the applied high-frequency power supply is reduced by more than 0.5% and less than 6% from the position of the uppermost substrate among the plurality of substrates that are loaded and held.

11. The substrate processing apparatus according to claim 1, characterized in that, The first electrode group and the second electrode group are disposed outside the processing chamber, and are configured to generate plasma inside the processing chamber.

12. The substrate processing apparatus according to claim 1, characterized in that, It is equipped with a heating unit for heating the aforementioned substrate. The first electrode group and the second electrode group are disposed between the processing chamber and the heating section.

13. An electrode for generating plasma, characterized in that, have: It has a first electrode group and a second electrode group. The aforementioned first electrode group comprises at least one first electrode connected to a high-frequency power supply and subjected to an arbitrary potential, at least one second electrode connected to a high-frequency power supply and subjected to an arbitrary potential and shorter than the first electrode, and at least one third electrode assigned a reference potential and having the same length as the first electrode. The second electrode group consists of at least one fourth electrode connected to a high-frequency power supply and subjected to an arbitrary potential, at least one fifth electrode connected to a high-frequency power supply and subjected to an arbitrary potential and shorter than the fourth electrode, and at least one sixth electrode assigned a reference potential and having the same length as the fourth electrode. The first electrode, the second electrode, and the third electrode are arranged in the order of the first electrode, the second electrode, and the third electrode, and the fourth electrode, the fifth electrode, and the sixth electrode are arranged in the order of the fourth electrode, the fifth electrode, and the sixth electrode. The length directions of the first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode are arranged in the direction in which the multiple substrates processed by the processing chamber are loaded and held.

14. A method for manufacturing a semiconductor device, characterized in that, have: A process of loading a substrate into a processing chamber of a substrate processing apparatus, the substrate processing apparatus comprising the processing chamber for processing the substrate and a plasma generation unit, the plasma generation unit being electrodes for generating plasma, having a first electrode group and a second electrode group. The first electrode group comprises at least one first electrode connected to a high-frequency power supply and subjected to an arbitrary potential, a second electrode connected to a high-frequency power supply and subjected to an arbitrary potential and shorter than the first electrode, and at least one third electrode assigned a reference potential and having the same length as the first electrode. The second electrode group comprises at least one fourth electrode connected to a high-frequency power supply and subjected to an arbitrary potential, at least one fifth electrode connected to a high-frequency power supply and subjected to an arbitrary potential and shorter than the fourth electrode, and at least one sixth electrode assigned a reference potential and having the same length as the fourth electrode. The first, second, and third electrodes are arranged in the order of first, second, and third electrodes, and the fourth, fifth, and sixth electrodes are arranged in the order of fourth, fifth, and sixth electrodes. The length direction of the first, second, third, fourth, fifth, and sixth electrodes is arranged in the direction in which multiple substrates are loaded and held. The process of generating plasma in the processing chamber by the plasma generating unit described above.

15. A substrate processing method, characterized in that, have: A process of loading a substrate into a processing chamber of a substrate processing apparatus, the substrate processing apparatus comprising the processing chamber for processing the substrate and a plasma generation unit, the plasma generation unit being electrodes for generating plasma, having a first electrode group and a second electrode group. The first electrode group comprises at least one first electrode connected to a high-frequency power supply and subjected to an arbitrary potential, a second electrode connected to a high-frequency power supply and subjected to an arbitrary potential and shorter than the first electrode, and at least one third electrode assigned a reference potential and having the same length as the first electrode. The second electrode group comprises at least one fourth electrode connected to a high-frequency power supply and subjected to an arbitrary potential, at least one fifth electrode connected to a high-frequency power supply and subjected to an arbitrary potential and shorter than the fourth electrode, and at least one sixth electrode assigned a reference potential and having the same length as the fourth electrode. The first, second, and third electrodes are arranged in the order of first, second, and third electrodes, and the fourth, fifth, and sixth electrodes are arranged in the order of fourth, fifth, and sixth electrodes. The length direction of the first, second, third, fourth, fifth, and sixth electrodes is arranged in the direction in which multiple substrates are loaded and held. The process of generating plasma in the processing chamber by the plasma generating unit described above.

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