A method for manufacturing a metal-bonded diamond porous semiconductor thinning grinding wheel

Abstract

The present application belongs to abrasive tool technical field, and particularly relates to a preparation method of metal-bonded diamond porous semiconductor thinning grinding wheel; the preparation steps of the present application include abrasive layer material preparation, agglomerate forming, agglomerate sintering and processing, agglomerate bonding or welding with a substrate, and post-processing to obtain a porous high-strength metal-bonded diamond thinning grinding wheel. The original hydrogen reduction pre-sintering metal-bonded abrasive is adopted, and the metal bonding agent and pore-forming agent are optimally selected; the prepared material is formed by machine pressing, and then sintered in a vacuum furnace at 600-900 DEG C; the substrate is bonded or welded, and the porous high-strength metal-bonded diamond grinding wheel is obtained after machining and processing. The performance of the grinding wheel exceeds the service performance of existing grinding wheels in SiC wafer thinning, sapphire thinning, monocrystalline silicon thinning and other semiconductor thinning applications.

Description

Technical Field

[0001] This invention belongs to the field of abrasive and grinding tool technology, specifically relating to a method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel. Background Technology

[0002] With the rapid development of materials science and technology, a large number of new materials have emerged and are widely used in engineering. These include hard, brittle, and easily burned materials that are difficult to process, such as single-crystal silicon carbide wafers and single-crystal silicon wafers. Among these, wafer thinning grinding wheels play an important role in the chip manufacturing process: firstly, the thinning process can reduce the overall thickness of the chip, which is beneficial for heat dissipation and integration; secondly, by reducing the thickness of the damage layer and surface roughness of the wafer surface, the internal stress caused by each process before thinning is released, reducing the degree of chip breakage during the dicing process.

[0003] However, in grinding processes using semiconductor materials such as silicon carbide and silicon, resin binders (mainly phenolic resin) are commonly used as grinding wheel bonding materials. However, they are not suitable for use in ultrafine-grained diamond grinding wheels. Firstly, resin materials have poor thermal conductivity, making it difficult to dissipate the heat generated during grinding. Secondly, the holding power of resin binders for diamond is relatively low. When the diamond grit is fine, resin-bonded diamond grinding wheels require a denser structure to ensure sufficient holding power, which leads to reduced porosity and increased wear ratio. Therefore, to truly solve the problem of processing new materials and break through the bottlenecks of traditional processing technologies, the key is to develop new processing tools and materials. Summary of the Invention

[0004] The purpose of this invention is to provide a method for preparing a metal-bonded diamond porous semiconductor thinned grinding wheel, which solves the shortcomings of traditional dense metal-bonded diamond grinding wheels in terms of dressing, sharpening, and edge removal. In addition, the purpose of this invention is to start from the material and microstructure of the abrasive layer itself, and solve the dressing and self-sharpening ability of metal-bonded diamond grinding wheels by increasing the porosity of the metal-bonded grinding wheel. At the same time, the invention improves the binding ability of the binder to the abrasive through a unique abrasive pre-sintering technology, thereby increasing the strength and service life of the grinding wheel.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel includes the following steps:

[0007] Step 1, Preparation of abrasive layer materials: Prepare pre-sintered abrasive; Mix the pre-sintered abrasive, metal binder, pore-forming agent and temporary binder evenly in a three-dimensional mixer and then sieve for later use;

[0008] Step 2, agglomeration: Pour the prepared abrasive layer material into the mold, place it on a hydraulic press to press it into shape, and after demolding, obtain the agglomerated semi-finished product.

[0009] Step 3, sintering and processing of agglomerates: The agglomerate semi-finished product is placed in a vacuum sintering furnace for sintering, and the agglomerates are obtained after cooling in the furnace; the agglomerates are washed in a water bath and dried thoroughly for later use.

[0010] Step 4, Connecting the agglomerate to the substrate: The agglomerate and the substrate are bonded together by curing with an organic adhesive or by brazing.

[0011] Step 5: Post-processing; to obtain a qualified grinding wheel with a tight bond between the abrasive layer and the substrate.

[0012] Furthermore, the pre-sintered abrasive is prepared as follows:

[0013] Diamond abrasive is thoroughly mixed with metal powder using an organic binder, phenolic resin liquid, wherein the diamond abrasive accounts for 80%–90% of the total raw material mass, the metal powder accounts for 10%–20% of the total raw material mass, and the phenolic resin liquid is added as an additional 5% of the total raw material mass. The uniformly mixed material is pressed into a blank using a hydraulic press with a pressure of 10–30 MPa. The blank is then cured in a curing furnace at 180°C for 1–3 hours. After curing, the blank is held at 300°C in a hydrogen reduction furnace for 1–3 hours, cooled in the furnace, and then ball-milled and sieved to obtain pre-sintered abrasive.

[0014] Preferably, the diamond abrasive is any one of diamond, nickel-plated diamond, and titanium-plated diamond, or any combination thereof.

[0015] Preferably, the metal powder is a mixture of copper powder and tin powder, with the ratio of copper powder to tin powder being 1 to 2:1.

[0016] Furthermore, the metal binder comprises 0%–40% copper-tin alloy powder, 30%–80% copper powder, 1%–40% tin powder, 0%–10% silver powder, 0%–10% lead powder, and 0%–10% nickel powder.

[0017] Furthermore, the pore-forming agent includes one or more of PMMA, sodium chloride, ammonium bicarbonate, urea, titanium hydride, or nickel hydride.

[0018] Furthermore, the temporary binder is either cresol or liquid paraffin.

[0019] Specifically, in step one, the amount of material added is determined by the volume ratio of the cavity of the mold, and 5% to 25% of the volume ratio of pre-sintered abrasive is added, 20% to 60% of the volume ratio of metal binder is added, 20% to 60% of the volume ratio of pore-forming agent is added, and a temporary binder is added at 0.05% of the mass of the metal binder.

[0020] Specifically, the pre-sintered abrasive is added to a temporary binder and mixed in a V-type mixer for 0.5 to 3 hours. Then, a metal binder and a pore-forming agent are added and the mixture is continued for 1 to 2 hours before being sieved for later use.

[0021] Specifically, in step three, the agglomerated semi-finished product is placed in a vacuum sintering furnace at 600℃~900℃.

[0022] Firing is performed, with a holding time of 10 to 120 minutes. After cooling in the furnace, agglomerates are obtained. The agglomerates are then placed in a water bath.

[0023] Rinse with flowing distilled water at a constant temperature of 90℃ for 1–3 hours, and dry thoroughly before use.

[0024] The beneficial effects of this invention are as follows:

[0025] 1. This invention addresses the material and microstructure of the abrasive layer in the grinding wheel. By increasing the porosity of the metal-bonded diamond grinding wheel, it improves the dressing and self-sharpening capabilities of the metal-bonded diamond grinding wheel. Simultaneously, a unique pre-sintering technology for the abrasive enhances the binder's holding power over the abrasive, increasing the wheel's strength and lifespan. The addition of metal hydrides utilizes their decomposition within a specific temperature range to release elemental metals and hydrogen. The released elemental metals exhibit extremely high activity, and through chemical metallurgy, this promotes a stronger bond between the metal binder and the abrasive.

[0026] 2. The pre-sintered abrasive in this invention preferentially combines metal powder with diamond through sintering followed by crushing, so that the outer layer of diamond abrasive is wrapped with metal material. The pre-sintered abrasive facilitates a tighter bond between the abrasive and the grinding wheel, and at the same time improves the strength of the grinding wheel.

[0027] 3. In this invention, the temporary binder is first added to the diamond abrasive and mixed evenly before the metal binder and pore-forming agent are added. This allows the metal binder to better encapsulate the abrasive particles. The components of the metal binder have uniform particle size, which is the same as that of the pore-forming agent. This allows for the natural accumulation of particles to form deposited pores, increasing the porosity of the grinding wheel and reducing the need for pore-forming agent. Detailed Implementation

[0028] This invention provides a method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel, which specifically includes the following steps:

[0029] Step 1, Preparation of abrasive layer material:

[0030] The pre-sintered abrasive, metal binder, pore-forming agent, and temporary binder are mixed evenly in a three-dimensional mixer and then sieved for later use. Specifically, the pre-sintered abrasive is added to the temporary binder and mixed in a V-type mixer for 0.5–3 hours, then the metal binder and pore-forming agent are added and mixed for another 1–2 hours, followed by sieving for later use. The pre-sintered abrasive is added at 5%–25% of the volume of the cavity of the mold, the metal binder at 20%–60% of the volume, the pore-forming agent at 20%–60% of the volume, and the temporary binder at 0.05% of the mass of the metal binder, according to the volume ratio of the cavity of the mold.

[0031] The specific preparation steps of the pre-sintered abrasive are as follows:

[0032] Step 1.1: Thoroughly mix the diamond abrasive with the metal powder using an organic binder, phenolic resin liquid;

[0033] The total mass of diamond abrasive and metal powder is 100%, with diamond abrasive accounting for 80% to 90% of the total raw material mass and metal powder accounting for 10% to 20% of the total raw material mass; phenolic resin liquid accounts for 5% of the total raw material mass through external addition.

[0034] The diamond abrasive includes one or a mixture of diamond, nickel-plated diamond, and titanium-plated diamond, and the metal powder is a mixture of copper powder and tin powder, with a ratio of copper powder to tin powder of 1 to 2:1.

[0035] Step 1.2: The uniformly mixed material is pressed into a blank by a hydraulic press with a pressure of 10-30 MPa; the blank is cured in a curing oven at 180°C for 1-3 hours; the cured blank is then kept at 300°C for 1-3 hours in a hydrogen reduction furnace, cooled in the furnace, and then ball-milled and sieved to obtain pre-sintered abrasive.

[0036] The metal binder is composed of the following components by weight percentage: 0%–40% copper-tin alloy powder, 30%–80% copper powder, 1%–40% tin powder, 0%–10% silver powder, 0%–10% lead powder, and 0%–10% nickel powder.

[0037] The pore-forming agent includes one or more of PMMA, sodium chloride, barium chloride, ammonium bicarbonate, and urea, and is used in combination with titanium hydride or nickel hydride.

[0038] The temporary binder is one of cresol, liquid paraffin, etc. The temporary binder is first added to the diamond abrasive and mixed evenly before the metal binder and pore-forming agent are added, which allows the metal binder to better encapsulate the abrasive particles.

[0039] Preferably, the components of the metal binder have the same particle size as the pore-forming agent, which can utilize the natural accumulation of particles to form accumulated pores, thereby increasing the porosity of the grinding wheel and reducing the use of pore-forming agent.

[0040] Step two, clumping formation:

[0041] The abrasive layer material is poured into a mold and placed on a press to be pressed into shape. The molding pressure is 20-100 MPa. After demolding, a blocky semi-finished product is obtained.

[0042] Step 3, firing and processing of agglomerated material:

[0043] The agglomerated semi-finished product is placed in a vacuum sintering furnace and sintered at 600℃~900℃ for 10min~120min. After cooling in the furnace, the agglomerated product is obtained. The agglomerated product is placed in a water bath and washed with flowing distilled water at a constant temperature of 90℃ for 1~3h. After being thoroughly dried, it is ready for use.

[0044] Step 4, Connecting the Aggregate to the Matrix:

[0045] The agglomerates are cured and bonded to the substrate using an organic adhesive or by brazing. The substrate material is aerospace-grade aluminum.

[0046] Step 5, Post-processing:

[0047] Post-processing includes rough grinding, fine turning, sharpening, drilling, marking and other processing steps.

[0048] The present invention will be further described below with reference to specific implementation examples, but the present invention is not limited to these examples. Any embodiment freely combined according to the present invention is within the scope of protection.

[0049] Example 1

[0050] A method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel, the method specifically includes the following steps:

[0051] Step 1, Preparation of abrasive layer material:

[0052] The pre-sintered abrasive, metal binder, pore-forming agent, and temporary binder are mixed evenly in a three-dimensional mixer and then sieved for later use. The pre-sintered abrasive accounts for 10% of the mold cavity volume, the metal binder accounts for 40% of the volume, and the pore-forming agent accounts for 50% of the volume. The amount of temporary binder added is 0.05% of the mass of the metal binder.

[0053] The pre-sintered abrasive is prepared in the following manner, specifically:

[0054] According to the proportions in Table 1, first weigh the diamond, add 5% of the total mass of phenolic resin liquid, mix well beforehand, then add copper powder and tin powder and continue mixing evenly; the specific contents of Table 1 are shown below.

[0055] raw material diamond Copper powder Tin powder Phenolic resin liquid mass ratio 80％ 12％ 8％ Add 5%

[0056] The above-mentioned uniformly mixed materials are pressed into a blank using a hydraulic press with a pressure of 10 MPa. The blank is then cured in a curing oven at 180°C for 1 hour. After curing, the blank is kept at 300°C for 3 hours in a hydrogen reduction furnace. After cooling in the furnace, it is ball-milled and passed through a 270 / 325 mesh sieve to obtain pre-sintered abrasive.

[0057] The metal binder comprises 30% copper-tin alloy powder, 30% copper powder, 20% tin powder, 5% iron powder, 5% lead powder, and 5% nickel powder by mass, with the metal binder accounting for 40% of the total volume. The particle size of the metal binder powder is 325 / 400 mesh.

[0058] The pore-forming agent comprises 20% PMMA microspheres, 25% sodium chloride powder, and 5% titanium hydride powder by volume. The particle size of the pore-forming agent is 325 / 400 mesh.

[0059] The temporary adhesive is cresol, and the amount added is 0.05% of the mass of the metal binder.

[0060] Based on the preferred schemes for the pre-sintered abrasive, metal binder, pore-forming agent, and temporary binder described above, the specific preparation method for the abrasive layer material is as follows:

[0061] After adding the pre-sintered abrasive to the temporary binder cresol, mix it in a V-type mixer for 0.5 hours, then add the metal binder and pore-forming agent and continue mixing for 2 hours. Finally, pass it through a 100# sieve for later use.

[0062] Step two, clumping formation:

[0063] The abrasive layer material is poured into the mold and placed on a press to be pressed into shape. The press is a four-column hydraulic press with a forming pressure of 40 MPa. After holding the pressure for 1 minute, the material is demolded in the reverse direction, resulting in a clump of semi-finished product.

[0064] Step 3, firing and processing of agglomerated material:

[0065] Sintering was performed in a vacuum sintering furnace at a temperature of 700℃ for 30 minutes. After holding at this temperature, the agglomerates were obtained by furnace cooling. The sintering process data are shown in Table 2. The agglomerates were then placed in a water bath and washed with flowing distilled water at a constant temperature of 90℃ for 2 hours. After thorough drying, they were ready for use.

[0066] Normal temperature~300℃ 30min 300℃～300℃ 60min 300℃～700℃ 120min 700℃～700℃ 30min 700℃~normal temperature Cooling with furnace

[0067] The open porosity of the agglomerates obtained after testing was 52%, and the pore size distribution was 10-60 μm. The specific physical properties of the agglomerates are shown in Table 3.

[0068]

[0069]

[0070] Step 4: Connecting the agglomerate to the substrate:

[0071] The lumps need to be machined to obtain qualified lumps with consistent dimensions; the lumps are bonded to the aerospace aluminum substrate with structural adhesive and cured at room temperature for 24 hours.

[0072] Step 5, Post-processing:

[0073] The finished grinding wheel is obtained through machining processes including rough grinding, fine turning, sharpening, drilling, and marking. The performance of the finished grinding wheels is compared and tested, as shown in Table 4. Table 4 demonstrates that the finished grinding wheel obtained using the method of this invention exhibits superior performance.

[0074]

[0075] Example 2

[0076] A method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel, the method specifically includes the following steps:

[0077] Step 1, Preparation of abrasive layer material:

[0078] The pre-sintered abrasive, metal binder, pore-forming agent, and temporary binder are mixed evenly in a three-dimensional mixer and then sieved for later use. The pre-sintered abrasive accounts for 8% of the mold cavity volume, the metal binder accounts for 32% of the volume, and the pore-forming agent accounts for 60% of the volume. The amount of temporary binder added is 0.05% of the mass of the metal binder.

[0079] The pre-sintered abrasive is prepared in the following manner, specifically:

[0080] According to the proportions in Table 5, first weigh the titanium-plated diamond, add 5% of the total mass of phenolic resin liquid, mix well beforehand, then add copper powder and tin powder and continue mixing evenly. The specific contents of Table 5 are shown below.

[0081] raw material Titanium-plated diamond Copper powder Tin powder Phenolic resin liquid mass ratio 90％ 5％ 5％ Add 5%

[0082] The above-mentioned uniformly mixed materials are pressed into a blank using a hydraulic press with a pressure of 30 MPa. The blank is then cured in a curing oven at 180°C for 3 hours. After curing, the blank is kept at 300°C for 1 hour in a hydrogen reduction furnace. After cooling in the furnace, it is ball-milled and passed through a 270 / 325 mesh sieve to obtain pre-sintered abrasive.

[0083] The metal binder comprises 40% copper-tin alloy powder, 15% copper powder, 20% tin powder, 10% iron powder, 3% silver powder, and 2% nickel powder by mass, with the metal binder accounting for 32% of the total volume. The particle size of the metal binder powder is 325 / 400 mesh.

[0084] The pore-forming agent comprises 5% PMMA microspheres, 45% sodium chloride powder, and 10% nickel hydride powder by volume. The particle size of the pore-forming agent is 325 / 400 mesh.

[0085] The temporary adhesive is liquid paraffin, and its addition amount is 0.05% of the mass of the metal binder.

[0086] Based on the preferred schemes for the pre-sintered abrasive, metal binder, pore-forming agent, and temporary binder described above, the specific preparation method for the abrasive layer material is as follows:

[0087] After adding the pre-sintered abrasive to the temporary binder paraffin, mix for 1 hour in a V-type mixer, then add the metal binder and pore-forming agent and continue mixing for 1.5 hours. Finally, pass the mixture through a 100# sieve for later use.

[0088] Step two, clumping formation:

[0089] The abrasive layer material is poured into the mold and placed on a press to be pressed into shape. The press is a four-column hydraulic press with a forming pressure of 60 MPa. After holding the pressure for 1 minute, the material is demolded in the reverse direction, resulting in a clump of semi-finished product.

[0090] Step 3, firing and processing of agglomerated material:

[0091] Sintering was performed in a vacuum sintering furnace at a temperature of 650℃ for 30 minutes. After holding at this temperature, the agglomerates were obtained by furnace cooling. The sintering process is shown in Table 6, and the specific details of Table 6 are as follows. The agglomerates were placed in a water bath and washed with flowing distilled water at a constant temperature of 90℃ for 2 hours. After thorough drying, they were ready for use.

[0092]

[0093]

[0094] The obtained agglomerates, after testing, had an open porosity of 56% and a pore size distribution of 10–60 μm. The specific physical properties of the agglomerates are shown in Table 7, and the details of Table 7 are as follows.

[0095] Open porosity 56 Sandblasting hardness (28 chambers, 0.15 MPa) 1.4 (The smaller the number, the greater the hardness) Aperture distribution 10~60μm

[0096] Step 4: Connecting the agglomerate to the substrate:

[0097] The lumps need to be machined to obtain qualified lumps with consistent dimensions; the lumps are bonded to the aerospace aluminum substrate with structural adhesive and cured at room temperature for 24 hours.

[0098] Step 5, Post-processing:

[0099] The finished grinding wheel is obtained through machining processes including rough grinding, fine turning, sharpening, drilling, and marking. The performance of the finished grinding wheels is compared and tested in Table 8. The specific details of Table 8 are shown below, demonstrating that the finished grinding wheel obtained using the method of this invention has superior performance.

[0100]

[0101] Example 3

[0102] A method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel, the method specifically includes the following steps:

[0103] Step 1, Preparation of abrasive layer material:

[0104] The pre-sintered abrasive, metal binder, pore-forming agent, and temporary binder are mixed evenly in a three-dimensional mixer and then sieved for later use. The pre-sintered abrasive accounts for 10% of the mold cavity volume, the metal binder accounts for 55% of the volume, and the pore-forming agent accounts for 35% of the volume. The amount of temporary binder added is 0.05% of the mass of the metal binder.

[0105] The pre-sintered abrasive is prepared in the following manner, specifically:

[0106] According to the proportions in Table 9, first weigh the nickel-plated diamond, add 5% of the total mass of phenolic resin liquid, mix well beforehand, then add copper powder and tin powder and continue mixing evenly. The specific contents of Table 9 are shown below.

[0107] raw material Nickel-plated diamond Copper powder Tin powder Phenolic resin liquid mass ratio 85％ 10％ 5％ Add 5%

[0108] The above-mentioned uniformly mixed materials are pressed into a blank using a hydraulic press with a pressure of 20 MPa. The blank is then cured in a curing oven at 180°C for 2 hours. After curing, the blank is kept at 300°C for 2 hours in a hydrogen reduction furnace. After cooling in the furnace, it is ball-milled and passed through a 270 / 325 mesh sieve to obtain pre-sintered abrasive.

[0109] The metal binder comprises 40% copper-tin alloy powder, 15% copper powder, 20% tin powder, 10% iron powder, 3% silver powder, and 2% nickel powder by mass, with the metal binder accounting for 55% of the total volume. The particle size of the metal binder powder is 325 / 400 mesh.

[0110] The pore-forming agent comprises 5% PMMA microspheres, 25% urea, and 5% titanium hydride powder by volume. The particle size of the pore-forming agent is 325 / 400 mesh.

[0111] The temporary adhesive is liquid paraffin, and its addition amount is 0.05% of the mass of the metal binder.

[0112] Based on the preferred schemes for the pre-sintered abrasive, metal binder, pore-forming agent, and temporary binder described above, the specific preparation method for the abrasive layer material is as follows:

[0113] After adding the pre-sintered abrasive to the temporary binder paraffin, mix for 3 hours in a V-type mixer, then add the metal binder and pore-forming agent and continue mixing for 1 hour. Finally, pass the mixture through a 100# sieve for later use.

[0114] Step two, clumping formation:

[0115] The abrasive layer material is poured into the mold and placed on a press to be pressed into shape. The press is a four-column hydraulic press with a forming pressure of 80 MPa. After holding the pressure for 1 minute, the mold is reversed and demolded, resulting in a clump of semi-finished product.

[0116] Step 3, firing and processing of agglomerated material:

[0117] Sintering was performed in a vacuum sintering furnace at a temperature of 650℃ for 30 minutes. After holding at this temperature, the agglomerates were obtained by furnace cooling. The sintering process is shown in Table 10, and the specific details of Table 10 are as follows. The agglomerates were placed in a water bath and washed with flowing distilled water at a constant temperature of 90℃ for 1 hour. After thorough drying, they were ready for use.

[0118] Normal temperature~300℃ 30min 300℃～300℃ 60min 300℃～650℃ 120min 650℃～650℃ 30min 650℃~normal temperature Cooling with furnace

[0119] The obtained agglomerates, after testing, have an open porosity of 34% and a pore size distribution of 10–60 μm. The specific physical properties of the agglomerates are shown in Table 11, and the details of Table 11 are as follows.

[0120] Open porosity 34 Sandblasting hardness (28 chambers, 0.15 MPa) 0.6 (The smaller the number, the greater the hardness) Aperture distribution 10~60μm

[0121] Step 4: Connecting the agglomerate to the substrate:

[0122] The lumps need to be machined to obtain qualified lumps with consistent dimensions; the lumps are bonded to the aerospace aluminum substrate with structural adhesive and cured at room temperature for 24 hours.

[0123] Step 5, Post-processing:

[0124] The finished grinding wheel is obtained through machining processes including rough grinding, fine turning, sharpening, drilling, and marking. The performance of the finished grinding wheels is compared and tested in Table 12, and the details of Table 12 are shown below. It can be seen that the finished grinding wheel obtained by the method of this invention has superior performance.

[0125]

Claims

1. A method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel, characterized in that, Includes the following steps: Step 1, Preparation of abrasive layer materials: Prepare pre-sintered abrasive. Add 5%–25% by volume of pre-sintered abrasive, 20%–60% by volume of metal binder, and 20%–60% by volume of pore-forming agent to the cavity volume of the fixed-mold forming mold. Add temporary binder at 0.05% by mass of metal binder. Specifically, mix the pre-sintered abrasive with the temporary binder in a V-type mixer for 0.5–3 hours, then add the metal binder and pore-forming agent and continue mixing for 1–2 hours. Sieve and set aside. The pre-sintered abrasive is prepared as follows: diamond abrasive is thoroughly mixed with metal powder using an organic binder, phenolic resin liquid, wherein the diamond abrasive accounts for 80%~90% of the total raw material mass, the metal powder accounts for 10%~20% of the total raw material mass, and the phenolic resin liquid is added additionally at 5% of the total raw material mass; the uniformly mixed material is pressed into a blank using a hydraulic press, with a pressure of 10~30MPa; the blank is cured in a curing furnace at 180℃ for 1~3h; the cured blank is held at 300℃ for 1~3h in a hydrogen reduction furnace, cooled in the furnace, and then ball-milled and sieved to obtain the pre-sintered abrasive; the diamond abrasive is any one or any mixture of diamond, nickel-plated diamond, and titanium-plated diamond; the metal powder is a mixture of copper powder and tin powder, with a copper powder to tin powder ratio of 1~2:

1. The metal binder comprises 0%–40% copper-tin alloy powder, 30%–80% copper powder, 1%–40% tin powder, 0%–10% silver powder, 0%–10% lead powder, and 0%–10% nickel powder; the pore-forming agent comprises one or more of PMMA, sodium chloride, ammonium bicarbonate, and urea, mixed with titanium hydride or nickel hydride; the particle size of each component of the metal binder is consistent and the same as that of the pore-forming agent; the temporary binder is cresol or liquid paraffin. Step 2, agglomeration: Pour the prepared abrasive layer material into the mold, place it on a hydraulic press to press it into shape, and after demolding, obtain the agglomerated semi-finished product. Step 3, sintering and processing of agglomerates: The agglomerate semi-finished product is placed in a vacuum sintering furnace for sintering, and the agglomerates are obtained after cooling in the furnace; the agglomerates are washed in a water bath and dried thoroughly for later use. Step 4, Connecting the agglomerate to the substrate: The agglomerate and the substrate are bonded together by curing with an organic adhesive or by brazing. Step 5: Post-processing; to obtain a qualified grinding wheel with a tight bond between the abrasive layer and the substrate.

2. The method for preparing a metal-bonded diamond porous semiconductor thinning grinding wheel according to claim 1, characterized in that, In step three, the agglomerated semi-finished product is placed in a vacuum sintering furnace and sintered at 600℃~900℃ for 10min~120min. After cooling in the furnace, the agglomerated product is obtained. The agglomerated product is then placed in a water bath and washed with flowing distilled water at a constant temperature of 90℃ for 1~3h. After being thoroughly dried, it is ready for use.

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