A surface treatment method, device, equipment and medium of a gallium arsenide substrate

Abstract

The application discloses a surface treatment method, device, equipment and medium of a gallium arsenide substrate, wherein the surface treatment method of the gallium arsenide substrate comprises the following steps: placing the gallium arsenide substrate in a first solution for washing, wherein the first solution comprises gold chloride and deionized water; and performing laser intermittent irradiation and ultrasonic treatment on the first solution, so that gold ions in the first solution are diffused and the surface of the gallium arsenide substrate is treated. The disclosed scheme improves the process yield of the surface of the gallium arsenide substrate.

Description

Technical Field

[0001] This invention relates to the field of semiconductor devices, and more particularly to a method, apparatus, equipment, and medium for surface treatment of gallium arsenide substrates. Background Technology

[0002] Gallium arsenide (GaAs) is a material widely used in chip substrates. In fields such as microwave devices and optoelectronic devices, the surface processing and treatment of GaAs substrates have high requirements. For example, in the production process of LED (Light Emitting Diode) chips, the GaAs substrate needs to be thinned to reduce the heat generation problem during chip use. After the thinning process, the surface activity of the GaAs substrate is relatively high, so a lot of particles are attached to its surface. If the particles on its surface are not removed, it will affect the subsequent electroplating process.

[0003] In the related technologies for treating the surface of gallium arsenide substrates, a combination of chemical cleaning and polishing is generally used to clean the substrate surface. Although this method can remove contaminants, impurities, organic matter, oxide films, etc. from the surface of gallium arsenide substrates, it cannot effectively remove gallium arsenide particles from the surface of gallium arsenide substrates, resulting in unsatisfactory cleaning effect, which will still affect the subsequent electroplating process. Summary of the Invention

[0004] In view of this, the present invention proposes a surface treatment method, apparatus, equipment and medium for gallium arsenide substrates, which at least solves the problem that the above-mentioned related technologies for surface treatment of gallium arsenide substrates, which use a combination of chemical cleaning and polishing to clean the substrate surface, cannot effectively remove gallium arsenide particles from the surface of the gallium arsenide substrate, resulting in unsatisfactory cleaning effect and still affecting the subsequent electroplating process.

[0005] Based on the above objectives, one aspect of the present invention provides a surface treatment method for a gallium arsenide substrate, comprising: rinsing the gallium arsenide substrate in a first solution, wherein the first solution contains gold chloride and deionized water; and subjecting the first solution to intermittent laser irradiation and ultrasonic treatment to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate.

[0006] In some embodiments, the first solution contains 0.5-1.0% wt of gold chloride and 99%-99.5% wt of deionized water.

[0007] In some embodiments, the step of intermittently irradiating the first solution with laser and ultrasonically treating it to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate includes:

[0008] The first solution is subjected to intermittent laser irradiation and ultrasonic treatment until the particles on the surface of the gallium arsenide substrate are coated with diffused gold ions and then fall off, or the particles form a complex with the gallium arsenide substrate through gold ion diffusion and become integrated.

[0009] In some embodiments, the steps of intermittently irradiating the first solution with laser and ultrasonic treatment include: intermittently irradiating the first solution with laser at a pulse frequency of 1-10 Hz for 5-10 minutes, wherein the energy density of the laser is 0.1-1 joules per square centimeter.

[0010] In some embodiments, the steps of intermittently irradiating the first solution with laser and ultrasonic treatment further include: ultrasonically treating the first solution at an ultrasonic frequency of 20-50 kHz.

[0011] In some embodiments, the method further includes: circulating and rinsing the gallium arsenide substrate with a second solution within a preset rinsing angle range before rinsing the gallium arsenide substrate in a first solution.

[0012] In some embodiments, the method further includes rinsing the gallium arsenide substrate in deionized water at a temperature of 0-5 degrees Celsius for 1-5 minutes before the step of cyclically rinsing the gallium arsenide substrate with a second solution within a preset rinsing angle.

[0013] In some embodiments, the step of cyclically rinsing the gallium arsenide substrate with the second solution within a preset rinsing angle range includes: cyclically rinsing the gallium arsenide substrate with the second solution for 1-5 minutes at a rinsing pressure of 0.1-0.3 MPa and a rinsing angle of no more than 30 degrees.

[0014] In some embodiments, the second solution is prepared according to the following mass percentages: 1%-3%wt of diamond nanoparticles, 3%-10%wt of soluble sodium salts, and 87%-96%wt of deionized water.

[0015] In another aspect of the present invention, a surface treatment apparatus for a gallium arsenide substrate is provided, comprising: a first module for rinsing the gallium arsenide substrate in a first solution, wherein the first solution contains gold chloride and deionized water; and a second module for intermittently irradiating the first solution with a laser and subjecting it to ultrasonic treatment, so as to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate.

[0016] In another aspect of the present invention, an electronic device is provided, including at least one processor; and a memory storing computer instructions executable on the processor, which, when executed by the processor, implement the steps of the above-described method.

[0017] In another aspect of the present invention, a computer-readable storage medium is provided, which stores a computer program that, when executed by a processor, implements the method steps described above.

[0018] The present invention has at least the following beneficial effects: The present invention proposes a surface treatment method for gallium arsenide substrates. The gallium arsenide substrate is placed in a solution prepared by gold chloride and deionized water. Under the action of ultrasound, it is intermittently irradiated by laser. On the one hand, gold ions in the solution are enriched, crystallized and contracted on the surface of the gallium arsenide substrate, gradually coating the deep particles on its surface and continuously diffusing to form complexes. Through the adsorption effect, the particles attached to the surface are randomly detached. On the other hand, the gallium arsenide particles remaining due to non-adsorption effects will be integrated with the gallium arsenide substrate body through the diffusion of gold ions, so that the subsequent metal coating will not be detached again. This effectively reduces the particles on the surface of the gallium arsenide substrate, improves the quality of subsequent metal electroplating, and improves the process yield of the gallium arsenide substrate surface treatment.

[0019] Furthermore, the above solution was subjected to intermittent laser irradiation for 5-10 minutes, with a laser energy density of 0.1-1 joules / cm², and intermittent irradiation was performed at a pulse frequency of 1-10 Hz, while ultrasonic treatment was performed at an ultrasonic frequency of 20-50 kHz. This provided high-temperature and high-pressure conditions that are difficult to achieve under normal circumstances, promoting the diffusion of gold ions and particles on the surface of the gallium arsenide substrate, thereby forming a complex and promoting the shedding of particles from the surface of the gallium arsenide substrate.

[0020] Furthermore, before cleaning the gallium arsenide substrate in a solution containing 0.5-1.0% wt gold chloride and 99%-99.5% wt deionized water, it is placed in a solution containing 1%-3% wt diamond nanoparticles, 3%-10% wt soluble sodium salt, and 87%-96% wt deionized water. The diamond nanoparticles have multiple edges and corners, and under certain water pressure and angle conditions, cyclical rotation rinsing can repeatedly and multi-directionally rinse the adsorbed particles on the surface, effectively removing the lightly attached gallium arsenide particles from the surface. Attached Figure Description

[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other embodiments can be obtained based on these drawings without creative effort.

[0022] Figure 1 The flowchart shown is a surface treatment method for a gallium arsenide substrate provided in an embodiment of the present invention;

[0023] Figure 2 The flowchart shown is a surface treatment method for a gallium arsenide substrate provided in another embodiment of the present invention;

[0024] Figure 3 The diagram shown illustrates the treatment effect of the surface treatment method for gallium arsenide substrates provided by the present invention.

[0025] Figure 4 The diagram illustrates the effect of treating the surface of a gallium arsenide substrate with conventional sulfuric acid and hydrochloric acid using existing technologies.

[0026] Figure 5 The diagram shown is another schematic of the treatment effect of treating the surface of a gallium arsenide substrate with an organic solution based on existing technology;

[0027] Figure 6 The diagram shown is a schematic diagram of a surface treatment apparatus for a gallium arsenide substrate provided in an embodiment of the present invention;

[0028] Figure 7 The diagram shown is a schematic representation of an electronic device provided in an embodiment of the present invention;

[0029] Figure 8 The diagram shown is a schematic representation of a computer-readable storage medium provided in an embodiment of the present invention. Detailed Implementation

[0030] The following describes embodiments of the present invention. However, it should be understood that the disclosed embodiments are merely examples, and other embodiments may take various alternative forms.

[0031] Furthermore, it should be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or apparatus that comprises a list of elements may include not only those elements but also elements not expressly listed or inherent to such process, method, article, or apparatus.

[0032] One or more embodiments of this application will now be described with reference to the accompanying drawings.

[0033] Based on the above objectives, this invention proposes an embodiment of a surface treatment method for gallium arsenide substrates. Figure 1 The flowchart shown illustrates a surface treatment method for a gallium arsenide substrate according to an embodiment of the present invention, including: S1, rinsing the gallium arsenide substrate in a first solution, wherein the first solution contains gold chloride and deionized water; S2, subjecting the first solution to intermittent laser irradiation and ultrasonic treatment to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate. This effectively reduces particulate matter on the surface of the gallium arsenide substrate, improves the quality of subsequent metal electroplating, and increases the process yield of the gallium arsenide substrate surface treatment.

[0034] In some embodiments, the first solution contains 0.5-1.0% wt of gold chloride and 99%-99.5% wt of deionized water.

[0035] In some embodiments, the step of intermittently irradiating the first solution with laser and ultrasonically treating it to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate includes:

[0036] The first solution is subjected to intermittent laser irradiation and ultrasonic treatment until the particles on the surface of the gallium arsenide substrate are coated with diffused gold ions and then fall off, or the particles form a complex with the gallium arsenide substrate through gold ion diffusion and become integrated.

[0037] According to several embodiments of the present invention, the steps of intermittently irradiating the first solution with laser and ultrasonic treatment include: intermittently irradiating the first solution with laser at a pulse frequency of 1-10 Hz for 5-10 minutes, wherein the energy density of the laser is 0.1-1 joules / square centimeter.

[0038] According to several embodiments of the present invention, the steps of intermittent laser irradiation and ultrasonic treatment of the first solution further include: ultrasonic treatment of the first solution at an ultrasonic frequency of 20-50 kHz.

[0039] According to several embodiments of the present invention, the method further includes: circulating and rotating the gallium arsenide substrate through a second solution within a preset rinsing angle before the step of rinsing the gallium arsenide substrate in the first solution.

[0040] According to several embodiments of the present invention, the method further includes rinsing the gallium arsenide substrate in deionized water at a temperature of 0-5 degrees Celsius for 1-5 minutes before the step of cyclically rinsing the gallium arsenide substrate with a second solution within a preset rinsing angle range.

[0041] According to several embodiments of the present invention, the step of cyclically rinsing a gallium arsenide substrate with a second solution within a preset rinsing angle range includes: cyclically rinsing the gallium arsenide substrate with the second solution for 1-5 minutes at a rinsing pressure of 0.1-0.3 MPa and a rinsing angle of no more than 30 degrees.

[0042] According to several embodiments of the present invention, the second solution is prepared according to the following mass percentages: 1%-3%wt of diamond nanoparticles, 3%-10%wt of soluble sodium salts, and 87%-96%wt of deionized water.

[0043] Figure 2 The flowchart shown is a surface treatment method for a gallium arsenide substrate provided in an embodiment of the present invention, as follows: Figure 2 As shown, in practical applications, after the gallium arsenide substrate is thinned, the preferred step of surface treatment includes:

[0044] Step 1: Prepare the pre-rinse solution. Add diamond nanoparticles and soluble sodium salt to deionized water to prepare a pre-rinse solution containing 1%-3% wt diamond nanoparticles, 3%-10% wt soluble sodium salt, and 87%-96% wt deionized water. The diamond nanoparticles have a particle size of 0.5-1 micrometer, and the soluble sodium salt is either sodium sulfate or sodium nitrate. Preferably, the temperature of the deionized water is 0-5 degrees Celsius. No strong acids, strong alkalis, or organic solvents are used in this preparation process, thus preventing damage to the gallium arsenide substrate itself during cleaning. This method is also environmentally friendly and low-cost, suitable for mass production. In a preferred embodiment, the diamond nanoparticles have a particle size of 0.5-1 micrometer. Diamond nanoparticles of this size have a better effect on treating surface particles on gallium arsenide substrates. Circulating and rotating rinsing under certain water pressure and angle conditions allows for repeated, multi-directional rinsing of surface-adsorbed particles, effectively removing lightly adhered gallium arsenide particles from the surface.

[0045] Step 2: Prepare the post-rinse solution by adding gold chloride to deionized water to prepare a post-rinse solution of 0.5-1.0% wt gold chloride and 99%-99.5% wt deionized water. Preferably, the temperature of the deionized water is 0-8 degrees Celsius.

[0046] Step 3: After thinning the gallium arsenide substrate to be thinned using conventional processes, rinse it with deionized water and then dry it.

[0047] Step 4: Rinse the gallium arsenide substrate treated in Step 3 in low-temperature deionized water for 1-5 minutes, wherein the temperature of the deionized water is 0-5 degrees Celsius.

[0048] Step 5: Pre-rinse. Use the pre-rinse solution prepared in Step 1 to circulate and rotate the gallium arsenide substrate treated in Step 4 at a certain rinsing angle. Then rinse again with deionized water to remove the residual pre-rinse solution on the surface. The rinsing angle is less than or equal to 30 degrees, the rinsing pressure is 0.1-0.3 MPa, and the rinsing time is 1-5 minutes.

[0049] Step 6: Post-rinsing. The gallium arsenide substrate treated in Step 5 is placed in the post-rinsing solution prepared in Step 2 and subjected to intermittent laser irradiation. During the irradiation, the post-rinsing solution is ultrasonically treated. The irradiation time is 5-15 minutes, the laser energy density is 0.1-1.0 joules / cm², the pulse frequency of the intermittent irradiation is 1-10 Hz, and the ultrasonic frequency is 20 kHz-50 kHz. This step provides high-temperature and high-pressure conditions that are difficult to achieve under normal circumstances, promoting the diffusion of gold ions with particles on the surface of the gallium arsenide substrate, forming complexes between the two, and promoting the shedding of particles from the surface of the gallium arsenide substrate.

[0050] Step 7: Rinse with high-temperature deionized water. Place the gallium arsenide substrate treated in step 6 into deionized water for rinsing. The temperature of the deionized water is 40-60 degrees Celsius, and the rinsing time is 1-5 minutes.

[0051] Step 8: Rinse at room temperature. The gallium arsenide substrate treated in Step 7 is rinsed and dried using conventional processes to complete the rinsing of the gallium arsenide substrate surface.

[0052] The following is another embodiment of a surface treatment method for a gallium arsenide substrate provided by the present invention. In this embodiment, a pre-rinse solution and a post-rinse solution for rinsing the surface of the gallium arsenide substrate are prepared. A pre-rinse solution is prepared by adding 0.8-micron-sized diamond nanoparticles and anhydrous sodium sulfate to deionized water at 3°C, with weight percentages of 2% wt diamond nanoparticles, 4.5% wt soluble sodium salt, and 93.5% wt deionized water. A post-rinse solution is prepared by adding gold chloride to deionized water at 5°C, with weight percentages of 1.0% wt gold chloride and 99% wt deionized water. After the gallium arsenide substrate to be thinned is thinned using conventional processes, it is first rinsed with deionized water and then dried. The resulting gallium arsenide substrate is then rinsed in deionized water at 2°C for 3 minutes. Afterward, the gallium arsenide substrate is circulated and rinsed with the pre-rinse solution at a rinsing angle of 25 degrees for 5 minutes, maintaining a water pressure of 0.3 MPa during the rinsing process. After rinsing, the substrate is rinsed again with deionized water to remove any residual pre-rinse solution from the surface. The next step involves placing the gallium arsenide substrate in a post-rinse solution and subjecting it to intermittent laser irradiation. During irradiation, the post-rinse solution is ultrasonically treated. The irradiation time is 5 minutes, the laser energy density is 0.3 joules / cm², the pulse frequency of the intermittent irradiation is 1-10 Hz, and the ultrasonic frequency is 25 kHz. Finally, the gallium arsenide substrate is rinsed in deionized water at 60 degrees Celsius, followed by conventional cleaning and drying processes at room temperature to complete the surface cleaning of the gallium arsenide substrate.

[0053] Figure 3 The diagram shown illustrates the treatment effect of the surface treatment method for gallium arsenide substrates provided by the present invention. Figure 4 The diagram illustrates the treatment effect of conventional sulfuric acid and hydrochloric acid on the surface of a gallium arsenide substrate using existing technology. Figure 5 The diagram illustrates another example of the treatment effect of treating the surface of a gallium arsenide substrate with an organic solution using existing technology. The methods for determining the treatment effect include, but are not limited to, adhering a blue film to the cleaned surface, observing the number of surface particles, and determining whether the back coating is lost during N-side die-casting after chip dicing. If the surface treatment effect on the gallium arsenide substrate is better, then adhering the blue film to the surface will result in fewer surface particles, and less back coating loss during N-side die-casting after chip dicing. Figure 3 (1) The diagram shows the number of surface particles in the surface treatment method for gallium arsenide substrates provided by the present invention. The black dots in the diagram represent residues. Figure 3 (2) The diagram shows whether the back coating is lost after the N-side flipping of the chip after dicing based on the surface treatment method of gallium arsenide substrate provided by the present invention. The small black part in the diagram is the back coating that is lost. Figure 4(1) The diagram shows the number of surface particles in the prior art method of treating the surface of a gallium arsenide substrate with conventional sulfuric acid and hydrochloric acid. The black dots in the diagram represent residues. Figure 4 (2) The diagram shows whether the back coating is lost after chip cutting and N-side flipping based on the processing method of treating the surface of gallium arsenide substrate with conventional sulfuric acid and hydrochloric acid. The small black part in the diagram represents the back coating loss. Figure 5 (1) The diagram shown is a schematic diagram of the number of surface particles in the prior art method of treating the surface of a gallium arsenide substrate with an organic solution. The black dots in the diagram represent residues. Figure 5 (2) The diagram shows whether the back coating is lost after chip cutting and N-side flipping based on the processing method of treating the surface of gallium arsenide substrate with organic solution according to the prior art. The small black part in the figure is the back coating that is lost.

[0054] Will Figure 3 respectively with Figure 4 and Figure 5 Comparative analysis revealed that the surface treatment method for gallium arsenide substrates provided by this invention exhibits significantly less surface particle adhesion and no back coating detachment compared to existing technologies using conventional sulfuric acid and hydrochloric acid. Furthermore, the surface treatment method for gallium arsenide substrates provided by this invention also shows significantly less surface particle adhesion and no back coating detachment compared to existing technologies using organic solutions. Therefore, the surface treatment method for gallium arsenide substrates provided by this invention can effectively remove stubborn gallium arsenide particles remaining on the surface, ensuring the quality of subsequent metal N-electrode evaporation, improving the yield of the N-side process after gallium arsenide substrate thinning, and enhancing the ohmic contact performance of the chip. Table 1 illustrates the specific comparison of the above effects, specifically comparing the surface treatment effect of the gallium arsenide substrates provided by this invention with the effects of existing technologies using conventional sulfuric acid and hydrochloric acid and organic solutions.

[0055]

[0056] Table 1

[0057] It should be particularly noted that the steps in each embodiment of the above-described surface treatment method for gallium arsenide substrates can be interchanged, substituted, added, or deleted. Therefore, these reasonable permutations and combinations of the surface treatment method for gallium arsenide substrates should also fall within the protection scope of this invention, and the protection scope of this invention should not be limited to the embodiments.

[0058] A second aspect of the present invention provides a surface treatment apparatus for a gallium arsenide substrate. Figure 6 A schematic diagram of a surface treatment apparatus for a gallium arsenide substrate provided in an embodiment of the present invention is shown, as follows: Figure 6 As shown, it includes: a first module 011, used to rinse a gallium arsenide substrate in a first solution, wherein the first solution contains gold chloride and deionized water; and a second module 012, used to intermittently irradiate the first solution with laser and perform ultrasonic treatment to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate.

[0059] A third aspect of the present invention provides an electronic device, Figure 7 The diagram shown is a schematic representation of an electronic device provided in an embodiment of the present invention. For example... Figure 7 As shown, an electronic device provided by an embodiment of the present invention includes the following modules: at least one processor 021; and a memory 022, the memory 022 storing computer instructions 023 that can be executed by the processor 021, the computer instructions 023, when executed by the processor 021, implement the steps of the method described above, wherein the method includes: rinsing a gallium arsenide substrate in a first solution, wherein the first solution contains gold chloride and deionized water; intermittently irradiating the first solution with a laser and subjecting it to ultrasonic treatment, so that gold ions in the first solution diffuse and treat particulate matter on the surface of the gallium arsenide substrate.

[0060] The present invention also provides a computer-readable storage medium. Figure 8 The diagram shown is a structural schematic of a computer-readable storage medium provided in an embodiment of the present invention. Figure 8 As shown, computer-readable storage medium 031 stores a computer program 032 that, when executed by a processor, performs the steps of the method described above, wherein the method includes: rinsing a gallium arsenide substrate in a first solution, wherein the first solution contains gold chloride and deionized water; intermittently irradiating the first solution with a laser and subjecting it to ultrasonic treatment to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate.

[0061] Finally, it should be noted that those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program for setting system parameters can be stored in a computer-readable storage medium. When executed, the program can include the processes of the embodiments of the above methods. The storage medium for the program can be a magnetic disk, optical disk, read-only memory (ROM), or random access memory (RAM), etc. The above computer program embodiments can achieve the same or similar effects as any of the corresponding foregoing method embodiments.

[0062] Furthermore, the method disclosed in the embodiments of the present invention can also be implemented as a computer program executed by a processor, which may be stored in a computer-readable storage medium. When the computer program is executed by the processor, it performs the functions defined in the method disclosed in the embodiments of the present invention.

[0063] Furthermore, the above-described method steps and system units can also be implemented using a controller and a computer-readable storage medium for storing a computer program that enables the controller to perform the functions of the above-described steps or units.

[0064] Those skilled in the art will also understand that the various exemplary logic blocks, modules, circuits, and algorithm steps described in conjunction with the disclosure herein can be implemented as electronic hardware, computer software, or a combination of both. To clearly illustrate this interchangeability between hardware and software, the functionality of various illustrative components, blocks, modules, circuits, and steps has been generally described. Whether this functionality is implemented as software or as hardware depends on the specific application and the design constraints imposed on the system as a whole. Those skilled in the art can implement the functionality in various ways for each specific application, but such implementation decisions should not be construed as departing from the scope of the embodiments disclosed herein.

[0065] In one or more exemplary designs, functionality may be implemented in hardware, software, firmware, or any combination thereof. If implemented in software, the functionality may be stored as one or more instructions or code on or transmitted via a computer-readable medium. Computer-readable media include computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one location to another. Storage media may be any available medium accessible to a general-purpose or special-purpose computer. By way of example, and not limitation, computer-readable media may include RAM, ROM, EEPROM, CD-ROM or other optical disc storage devices, disk storage devices or other magnetic storage devices, or any other medium that may be used to carry or store the required program code in the form of instructions or data structures and is accessible to a general-purpose or special-purpose computer or a general-purpose or special-purpose processor. Furthermore, any connection may be appropriately referred to as computer-readable media. For example, if software is transmitted from a website, server, or other remote source using coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the aforementioned coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are all included in the definition of media. As used herein, disks and optical discs include compact discs (CDs), laser discs, optical discs, digital versatile discs (DVDs), floppy disks, and Blu-ray discs, where disks typically reproduce data magnetically, while optical discs reproduce data optically using lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0066] The above are exemplary embodiments disclosed in this invention. However, it should be noted that various changes and modifications can be made without departing from the scope of the embodiments of this invention as defined by the claims. The functions, steps, and / or actions of the methods according to the disclosed embodiments described herein do not need to be performed in any particular order. Furthermore, although the elements disclosed in the embodiments of this invention may be described or claimed individually, they may be understood as multiple unless explicitly limited to a singular number.

[0067] It should be understood that, as used herein, the singular form “a” is intended to include the plural form as well, unless the context clearly supports an exception. It should also be understood that, as used herein, “and / or” refers to any and all possible combinations of one or more of the associated listed items.

[0068] The embodiment numbers disclosed in the above embodiments of the present invention are merely for description and do not represent the superiority or inferiority of the embodiments.

[0069] Those skilled in the art will understand that all or part of the steps of the above embodiments can be implemented by hardware or by a program instructing related hardware. The program can be stored in a computer-readable storage medium, such as a read-only memory, a disk, or an optical disk.

[0070] Those skilled in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of the invention (including the claims) is limited to these examples. Within the framework of the invention, technical features of the above embodiments or different embodiments can be combined, and many other variations of different aspects of the invention exist, which are not provided in the details for the sake of brevity. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the invention should be included within the protection scope of the invention.

Claims

1. A surface treatment method for a gallium arsenide substrate, characterized in that, include: The gallium arsenide substrate is rinsed in a first solution, wherein the first solution contains gold chloride and deionized water; The first solution is subjected to intermittent laser irradiation and ultrasonic treatment to diffuse gold ions in the first solution and to treat particulate matter on the surface of the gallium arsenide substrate.

2. The method according to claim 1, characterized in that, The first solution contains 0.5-1.0% wt of gold chloride and 99%-99.5% wt of deionized water.

3. The method according to claim 1, characterized in that, The step of intermittently irradiating the first solution with laser and ultrasonic treatment to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate includes: The first solution is subjected to intermittent laser irradiation and ultrasonic treatment until the particles on the surface of the gallium arsenide substrate are coated with diffused gold ions and then fall off, or the particles form a complex with the gallium arsenide substrate through gold ion diffusion and become integrated.

4. The method according to claim 1, characterized in that, The steps of intermittent laser irradiation and ultrasonic treatment of the first solution include: The first solution is intermittently irradiated with laser at a pulse frequency of 1-10 Hz for 5-10 minutes, wherein the energy density of the laser is 0.1-1 joules per square centimeter.

5. The method according to claim 1, characterized in that, The steps of intermittent laser irradiation and ultrasonic treatment of the first solution further include: The first solution was subjected to ultrasonic treatment at an ultrasonic frequency of 20-50 kHz.

6. The method according to claim 1, characterized in that, The method further includes: Before rinsing the gallium arsenide substrate in the first solution, the gallium arsenide substrate is circulated and rotated in a second solution within a preset rinsing angle range.

7. The method according to claim 6, characterized in that, The method further includes: Before the step of cyclically rinsing the gallium arsenide substrate with a second solution within a preset rinsing angle range, the gallium arsenide substrate is rinsed in deionized water at a temperature of 0-5 degrees Celsius for 1-5 minutes.

8. The method according to claim 6, characterized in that, The step of cyclically rinsing the gallium arsenide substrate with a second solution within a preset rinsing angle range includes: The gallium arsenide substrate is rinsed with the second solution for 1-5 minutes at a rinsing pressure of 0.1-0.3 MPa and a rinsing angle of no more than 30 degrees.

9. The method according to claim 8, characterized in that, The second solution is prepared according to the following mass percentages: 1%-3%wt of diamond nanoparticles, 3%-10%wt of soluble sodium salts, and 87%-96%wt of deionized water.

10. A surface treatment apparatus for a gallium arsenide substrate, characterized in that, include: A first module is used to rinse a gallium arsenide substrate in a first solution, wherein the first solution contains gold chloride and deionized water; The second module is used to intermittently irradiate the first solution with laser and perform ultrasonic treatment to diffuse gold ions in the first solution and treat particulate matter on the surface of the gallium arsenide substrate.

11. An electronic device, characterized in that, include: At least one processor; as well as A memory storing computer instructions executable on the processor, which, when executed by the processor, implement the steps of the method according to any one of claims 1-9.

12. A computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the method according to any one of claims 1-9.

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