A power module dynamic test circuit and test method
By designing a dynamic test circuit that includes an energy storage capacitor and a load inductor, the problem of the lack of test equipment for three-level power modules is solved, and comprehensive testing of their dynamic performance is realized.
Patent Information
- Application Number
- CN202310909412.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-07-21
- Publication Date
- 2026-01-16
- Estimated Expiration
- 2043-07-21
AI Technical Summary
Existing technologies lack dynamic testing equipment and methods for three-level power modules.
A dynamic test circuit including an energy storage capacitor, a load inductor, and a switching device was designed. By using different combinations of switching devices, the dynamic performance of four controllable switching devices and diodes of a three-level power module can be tested.
Dynamic performance testing of three-level power modules was achieved, including switching characteristics, reverse recovery characteristics, and short-circuit characteristics testing. The testing method is simple and accurate.
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Figure CN116840647B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of power module testing, in particular to a power module dynamic testing circuit and testing method. BACKGROUND
[0002] IGBT power module is a mainstream semiconductor switching device widely used in modern medium and high power converters, and its dynamic characteristics determine the switching loss, power density, device stress and electromagnetic compatibility of the device, which directly affects the performance of the converter. Therefore, accurately measuring the dynamic performance of power switching elements has extremely important practical significance.
[0003] The power module dynamic testing system is an important testing link of semiconductor testing in high-end application field. According to the power supply mode of the power module, it can be divided into two levels and three levels. The DC end of the two-level power module has only two terminals, which are connected to the positive and negative terminals of the DC source respectively. The two-level power module usually only contains two units, and the structure is quite simple. The DC end of the three-level power module has three terminals, in addition to the positive and negative terminals of the DC source, there is also a terminal connected to the intermediate level. The three-level half-bridge power module usually contains 4-8 units, and the structure is relatively complex.
[0004] The existing power module dynamic testing equipment in the market can only be used for traditional two-level power modules. There is currently no corresponding testing equipment and testing method for three-level power modules. SUMMARY
[0005] Therefore, the present application provides a power module dynamic testing circuit and testing method to solve the technical problem that the prior art lacks effective dynamic testing equipment and testing methods for three-level power modules.
[0006] To achieve the above purpose, the present application provides a power module dynamic testing circuit, which comprises an energy storage capacitor C1, a load inductance L1, and four connection terminals for connecting a three-level power module and seven switching switches for testing. The four connection terminals are positive terminal P, intermediate terminal M, negative terminal N and alternating current terminal AC, and the seven switching switches are SW1, SW2, SW4, SW5, SW6, SW7 and SW8.
[0007] The positive terminal to the negative terminal of the energy storage capacitor C1 is connected through SW1 and SW2 connected in series, and also connected through SW7 and SW8 connected in series, and the intermediate terminal M is connected to the connection line between SW7 and SW8.
[0008] A node A is arranged in the connection line between SW1 and SW2, and the node A and the alternating current terminal AC are connected through SW4, and the load inductance L1 is connected in parallel with SW4.
[0009] The positive pole of the energy storage capacitor C1 is connected to the positive terminal P through SW5, and the negative pole of the energy storage capacitor C1 is connected to the negative terminal N through SW6.
[0010] Preferably, the positive pole of the energy storage capacitor C1 is connected to a high-voltage power supply switch SW0, and the positive pole of the energy storage capacitor C1 is connected to SW1, SW5 and SW7 through the high-voltage power supply switch SW0.
[0011] Preferably, the energy storage capacitor C1 is 100-3000uf, and the load inductor L1 is 1-1000uH.
[0012] Preferably, the energy storage capacitor C1 is an electrolytic capacitor or a film capacitor.
[0013] Preferably, the load inductor L1 is a hollow inductor.
[0014] According to another aspect of the present application, the present application also provides a test method of a power module dynamic test circuit, the three-level power module comprising four controllable switching devices, the four controllable switching devices being T1, T2, T3 and T4 respectively, and the controllable switching devices being IGBT or MOS tube, wherein:
[0015] The C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the negative terminal N, the AC terminal and the C pole of T3 are connected to the E pole of T1, the E pole of T3 is connected to the E pole of T4, the C pole of T4 is connected to the middle terminal M, and the diodes connected to T1, T2, T3 and T4 are D1, D2, D3 and D4 respectively.
[0016] The method for dynamically testing the three-level power module comprises the following steps:
[0017] S1, switching characteristic test:
[0018] SW1 is opened, SW2 is closed, SW4 is opened, SW5 is closed, SW6 is closed, SW7 is opened, SW8 is opened, and then T2, T3 and T4 are closed, and the switching characteristic test of T1 is realized by controlling the T1 switch.
[0019] SW1 is closed, SW2 is opened, SW4 is opened, SW5 is closed, SW6 is closed, SW7 is opened, SW8 is opened, and then T1, T3 and T4 are closed, and the switching characteristic test of T2 is realized by controlling the T2 switch.
[0020] SW1 is closed, SW2 is opened, SW4 is opened, SW5 is closed, SW6 is opened, SW7 is opened, SW8 is closed, and then T1, T2 and T4 are closed, and the switching characteristic test of T3 is realized by controlling the T3 switch.
[0021] SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is disconnected, SW6 is closed, SW7 is closed, SW8 is disconnected, and then T1, T2, and T3 are closed, and by controlling the T4 switch, the switching characteristic test of T4 is realized;
[0022] S2, reverse recovery test:
[0023] SW1 is closed, SW2 is disconnected, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, and then T1, T3, and T4 are closed, and by controlling the T2 switch, the reverse recovery characteristic test of D1 is realized;
[0024] SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, and then T2, T3, and T4 are closed, and by controlling the T1 switch, the reverse recovery characteristic test of D2 is realized;
[0025] SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is closed, SW6 is disconnected, SW7 is disconnected, and SW8 is closed, and then T2 and T3 are closed, and T4 is always open, and by controlling the T1 switch, the reverse recovery characteristic test of D3 is realized;
[0026] SW1 is closed, SW2 is disconnected, SW4 is disconnected, SW5 is disconnected, SW6 is closed, SW7 is closed, and SW8 is disconnected, and then T1 and T4 are closed, and T3 is always open, and by controlling the T2 switch, the reverse recovery characteristic test of D4 is realized;
[0027] S3, short circuit test:
[0028] SW1 is disconnected, SW2 is closed, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is disconnected, and SW8 is disconnected, and then T2, T3, and T4 are closed, and by controlling the T1 switch, the short circuit characteristic test of T1 is realized;
[0029] SW1 is closed, SW2 is disconnected, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is disconnected, and SW8 is disconnected, and then T1, T3, and T4 are closed, and by controlling the T2 switch, the short circuit characteristic test of T2 is realized;
[0030] SW1 is closed, SW2 is disconnected, SW4 is closed, SW5 is closed, SW6 is disconnected, SW7 is disconnected, and SW8 is closed, and then T1, T2, and T4 are closed, and by controlling the T3 switch, the short circuit characteristic test of T3 is realized;
[0031] Disconnect SW1, close SW2, close SW4, disconnect SW5, close SW6, close SW7, disconnect SW8, and then close T1, T2, T4, and control T3 switch to realize short-circuit characteristic test of T4.
[0032] According to another aspect of the present application, the present application further provides a test method of a power module dynamic test circuit, the three-level power module comprising four controllable switching devices and two diodes, the four controllable switching devices being T1, T2, T3 and T4 respectively, the controllable switching devices being IGBT or MOS tube, the two diodes being D3 and D4 respectively, the diodes connected to T1 and T2 being D1 and D2 respectively, wherein:
[0033] the C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the negative terminal N, the E pole of T1 is further connected to the E pole of T3, the C pole of T4 and the AC terminal, the anode of D3 is connected to the middle pole terminal M, the cathode of D3 is connected to the C pole of T3, the anode of D4 is connected to the E pole of T4, and the cathode of D4 is connected to the middle pole terminal M;
[0034] The method for performing dynamic performance test on the three-level power module comprises the following steps:
[0035] S1, switch characteristic test:
[0036] Disconnect SW1, close SW2, disconnect SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, and then close T2, T3 and T4, and control T1 switch to realize switch characteristic test of T1;
[0037] Close SW1, disconnect SW2, disconnect SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, and then close T1, T3 and T4, and control T2 switch to realize switch characteristic test of T2;
[0038] Disconnect SW1, close SW2, disconnect SW4, disconnect SW5, close SW6, close SW7, disconnect SW8, and then close T1, T2 and T4, and control T3 switch to realize switch characteristic test of T3;
[0039] Close SW1, disconnect SW2, disconnect SW4, close SW5, disconnect SW6, disconnect SW7, close SW8, and then close T1, T2 and T3, and control T4 switch to realize switch characteristic test of T4;
[0040] S2, reverse recovery test:
[0041] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 to test the reverse recovery characteristic of D1;
[0042] Open SW1, close SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T2, T3, T4, and control T1 to test the reverse recovery characteristic of D2;
[0043] S3, short circuit test:
[0044] Open SW1, close SW2, close SW4, close SW5, close SW6, open SW7, open SW8, and then close T2, T3, T4, and control T1 to test the short circuit characteristic of T1;
[0045] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 to test the short circuit characteristic of T2;
[0046] Open SW1, close SW2, close SW4, open SW5, close SW6, close SW7, open SW8, and then close T1, T2, T4, and control T3 to test the short circuit characteristic of T3;
[0047] Close SW1, open SW2, close SW4, close SW5, open SW6, open SW7, close SW8, and then close T1, T2, T3, and control T4 to test the short circuit characteristic of T4.
[0048] According to another aspect of the present application, the present application also provides a test method of a power module dynamic test circuit, the three-level power module comprising four controllable switching devices, the four controllable switching devices being T1, T2, T3, and T4 respectively, the controllable switching devices being IGBT or MOS tube, the diodes connected to T1, T2, T3, and T4 respectively being D1, D2, D3, and D4, wherein:
[0049] The C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the negative terminal N, the E pole of T1 is also connected to the E pole of T3 and the alternating current terminal AC, the C pole of T3 is connected to the C pole of T4, and the E pole of T4 is connected to the middle pole terminal M;
[0050] The method for testing the dynamic performance of the three-level power module comprises the following steps:
[0051] S1, switching characteristic test:
[0052] Disconnect SW1, close SW2, disconnect SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, and then close T2, T3, and T4. By controlling switch T1, the switching characteristics of T1 can be tested.
[0053] Close SW1, open SW2, open SW4, close SW5, close SW6, close SW7, open SW8, and then close T1, T3, and T4. By controlling switch T2, the switching characteristics of T2 can be tested.
[0054] Disconnect SW1, close SW2, disconnect SW4, disconnect SW5, close SW6, close SW7, disconnect SW8, then close T1, T2, and T4. By controlling switch T3, the switching characteristics of T3 can be tested.
[0055] Close SW1, open SW2, open SW4, close SW5, open SW6, open SW7, close SW8, and then close T1, T2, and T3. By controlling switch T4, the switching characteristics of T4 can be tested.
[0056] S2, Reverse Recovery Test:
[0057] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T3, and T4, and control switch T2 to test the reverse recovery characteristics of D1.
[0058] Disconnect SW1, close SW2, disconnect SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, and then close T2, T3, and T4. By controlling switch T1, the reverse recovery characteristics of D2 can be tested.
[0059] Close SW1, open SW2, open SW4, open SW5, close SW6, close SW7, open SW8, then close T1 and T3, and keep T4 normally open. By controlling switch T2, the reverse recovery characteristics of D3 can be tested.
[0060] With SW1 disconnected, SW2 closed, SW4 disconnected, SW5 closed, SW6 disconnected, SW7 disconnected, and SW8 closed, T2 and T4 closed, and T3 normally open, the reverse recovery characteristic of D4 can be tested by controlling switch T1.
[0061] S3, Short Circuit Test:
[0062] SW1 is disconnected, SW2 is closed, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, and then T1, T3, and T4 are closed, the short circuit characteristic test of T2 is realized by controlling the T2 switch.
[0063] SW1 is closed, SW2 is disconnected, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, and then T1, T3, and T4 are closed, the short circuit characteristic test of T2 is realized by controlling the T2 switch.
[0064] SW1 is disconnected, SW2 is closed, SW4 is closed, SW5 is disconnected, SW6 is closed, SW7 is closed, and SW8 is disconnected, and then T1, T2, and T4 are closed, the short circuit characteristic test of T3 is realized by controlling the T3 switch.
[0065] SW1 is closed, SW2 is disconnected, SW4 is closed, SW5 is closed, SW6 is disconnected, SW7 is disconnected, and SW8 is closed, and then T1, T2, and T3 are closed, the short circuit characteristic test of T4 is realized by controlling the T4 switch.
[0066] According to another aspect of the present application, the present application also provides a test method of a power module dynamic test circuit, the three-level power module comprising six controllable switching devices, the six controllable switching devices being T1, T2, T3, T4, T5, and T6 respectively, the controllable switching devices being IGBT or MOS tube, the diodes connected to T1, T2, T3, T4, T5, and T6 respectively being D1, D2, D3, D4, D5, and D6, wherein:
[0067] The C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the C pole of T3, the E pole of T3 is connected to the C pole of T4, the E pole of T4 is connected to the negative terminal N, the E pole of T5 and the C pole of T6 are both connected to the middle terminal M, the C pole of T5 is connected to the E pole of T1, the E pole of T6 is connected to the E pole of T3, and the E pole of T2 is also connected to the AC terminal.
[0068] The method for dynamically testing the three-level power module comprises the following steps:
[0069] S1, switch characteristic test:
[0070] SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, and SW8 is disconnected, and then T3, T4, T5, and T6 are closed, T2 is always open, the switch characteristic test of T1 is realized by controlling the T1 switch.
[0071] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T2, T5, T6, T4 always open, control T3 switch, realize the switch characteristic test of T3;
[0072] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T2, T5, T6, T3 always open, control T4 switch, realize the switch characteristic test of T4;
[0073] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T2, T5, T6, T3 always open, control T4 switch, realize the switch characteristic test of T4;
[0074] Close SW1, open SW2, open SW4, close SW5, open SW6, open SW7, close SW8, then close T1, T2, T3, T4, T6, control T5 switch, realize the switch characteristic test of T5;
[0075] Open SW1, close SW2, open SW4, open SW5, close SW6, close SW7, open SW8, then close T1, T2, T3, T4, T5, control T6 switch, realize the switch characteristic test of T6;
[0076] S2, reverse recovery test:
[0077] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T5, T6, T2, T4 always open, control T3 switch, realize the reverse recovery characteristic test of D1;
[0078] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T5, T6, T1, T4 always open, control T3 switch, realize the reverse recovery characteristic test of D2;
[0079] Open SW1, close SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T3, T5, T6, T2, T4 always open, control T1 switch, realize the reverse recovery characteristic test of D3;
[0080] Close SW1, open SW2, open SW4, open SW5, open SW6, open SW7, open SW8, and then close T4, T5, T6, open T2, T3, and control T1 switch to realize the reverse recovery characteristic test of D4;
[0081] Open SW1, close SW2, open SW4, open SW5, open SW6, open SW7, close SW8, and then close T3, T4, T5, T6, open T2, and control T1 switch to realize the reverse recovery characteristic test of D5;
[0082] Close SW1, open SW2, open SW4, open SW5, open SW6, open SW7, open SW8, and then close T1, T2, T5, T6, open T3, and control T4 switch to realize the reverse recovery characteristic test of D6;
[0083] S3, short circuit test:
[0084] Open SW1, close SW2, close SW4, close SW5, close SW6, open SW7, close SW8, and then close T3, T4, T6, open T2, T5, and control T1 switch to realize the short circuit characteristic test of T1;
[0085] Open SW1, close SW2, close SW4, close SW5, close SW6, close SW7, open SW8, and then close T3, T4, T5, T6, open T1, and control T2 switch to realize the short circuit characteristic test of T2;
[0086] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, close SW8, and then close T1, T2, T5, T6, open T4, and control T3 switch to realize the short circuit characteristic test of T3;
[0087] Close SW1, open SW2, close SW4, close SW5, close SW6, close SW7, open SW8, and then close T3, T4, T5, open T3, T6, and control T4 switch to realize the short circuit characteristic test of T4;
[0088] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, close SW8, and then close T2, T3, T4, T6, open T1, and control T5 switch to realize the short circuit characteristic test of T5;
[0089] SW1 is disconnected, SW2 is closed, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is closed, SW8 is disconnected, and then T1, T2, T3 and T5 are closed, T4 is always open, by controlling T6 switch, short circuit characteristic test of T6 is realized.
[0090] The power module dynamic test circuit of the application can realize dynamic test of three-level power modules of four structures by corresponding test methods, test items include switch test, reverse recovery test and short circuit test, the whole circuit structure is simple and convenient to operate, and can accurately measure dynamic performance of power switch elements; moreover, the method of the application can be applied to test of three-level power modules in a laboratory, and can also be applied to dynamic test and screening in large-scale production of three-level power modules. BRIEF DESCRIPTION OF DRAWINGS
[0091] The application will be further described below in combination with the drawings and specific embodiments.
[0092] Figure 1 Fig. 1 is a circuit schematic diagram of a power module dynamic test circuit;
[0093] Figure 2 Fig. 2 is a circuit topology diagram adopted for the test method of embodiment 1;
[0094] Figure 3 Fig. 3 is a circuit topology diagram adopted for the test method of embodiment 2;
[0095] Figure 4 Fig. 4 is a circuit topology diagram adopted for the test method of embodiment 3;
[0096] Figure 5 Fig. 5 is a circuit topology diagram adopted for the test method of embodiment 4.
[0097] The purposes, functional features and advantages of the application will be further described in combination with embodiments and with reference to the drawings. DETAILED DESCRIPTION
[0098] The application will be further described below in combination with the drawings and specific embodiments.
[0099] As Figure 1As shown, the application provides a power module dynamic test circuit, which comprises an energy storage capacitor C1, a load inductor L1, and four connection terminals for connecting a three-level power module and seven switching switches for testing, the four connection terminals are positive terminal P, middle terminal M, negative terminal N and alternating current terminal AC respectively, and the seven switching switches are SW1, SW2, SW4, SW5, SW6, SW7 and SW8 respectively.
[0100] The positive terminal of the energy storage capacitor C1 is connected to the negative terminal through SW1 and SW2 connected in series, and is also connected through SW7 and SW8 connected in series, and the middle terminal M is connected to the connection line between SW7 and SW8.
[0101] A node A is arranged in the connection line between SW1 and SW2, the node A is connected to the alternating current terminal AC through SW4, and the load inductor L1 is connected in parallel with SW4.
[0102] The positive terminal of the energy storage capacitor C1 is connected to the positive terminal P through SW5, and the negative terminal of the energy storage capacitor C1 is connected to the negative terminal N through SW6.
[0103] The energy storage capacitor C1 is an electrolytic capacitor or a film capacitor, and the load inductor L1 is a hollow inductor.
[0104] The energy storage capacitor C1 is a power supply device of the entire circuit, preferably, the positive terminal of the energy storage capacitor C1 is connected with a high-voltage power supply switch SW0, and the positive terminal of the energy storage capacitor C1 is connected to SW1, SW5 and SW7 through the high-voltage power supply switch SW0, that is, SW0 is used as the main switch of the power supply circuit.
[0105] Preferably, the energy storage capacitor C1 is 100-3000uf, and the load inductor L1 is 1-1000uH.
[0106] In order for those skilled in the art to better understand and implement the technical solutions of the application, the application will be further described in detail below through specific embodiments.
[0107] Embodiment 1
[0108] This embodiment uses the above-mentioned power module dynamic test circuit to test a three-level power module with the configuration shown in the dashed box, which comprises four controllable switching devices, the four controllable switching devices are T1, T2, T3 and T4 respectively, and the controllable switching devices are IGBT or MOS tube, wherein: Figure 2
[0109] The C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the negative terminal N, the AC terminal and the C pole of T3 are connected to the E pole of T1, the E pole of T3 is connected to the E pole of T4, the C pole of T4 is connected to the middle terminal M, and the diodes connected to T1, T2, T3 and T4 are D1, D2, D3 and D4 respectively;
[0110] The method for testing the dynamic performance of the three-level power module comprises the following steps:
[0111] In the following test process, the power module dynamic test circuit is used as the peripheral circuit for testing the power module, SW0 needs to be kept closed, the G pole and the E pole of the controllable switching devices T1, T2, T3 and T4 in the power module need to be connected to the external control circuit, and the external control circuit is used to control T1, T2, T3 and T4 to perform switching actions. How the controllable switching devices such as IGBT or MOS tube are controlled by the external control circuit belongs to the conventional technology in the field, and will not be described in detail here.
[0112] S1, switching characteristic test:
[0113] SW1 is disconnected, SW2 is connected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, T2, T3 and T4 are then closed, and the switching characteristic test of T1 is realized by controlling T1.
[0114] SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, T1 and T3 are then closed, and the switching characteristic test of T2 is realized by controlling T2.
[0115] SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is disconnected, SW7 is disconnected, and SW8 is connected, T1 and T2 are then closed, and the switching characteristic test of T3 is realized by controlling T3.
[0116] SW1 is disconnected, SW2 is connected, SW4 is disconnected, SW5 is disconnected, SW6 is connected, SW7 is connected, and SW8 is disconnected, T1 and T2 are then closed, and the switching characteristic test of T4 is realized by controlling T4.
[0117] S2, reverse recovery test:
[0118] SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, and SW8 is disconnected, T1 and T3 are then closed, and the reverse recovery characteristic test of D1 is realized by controlling T2.
[0119] Disconnect SW1, close SW2, disconnect SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, and then close T2, T3, and T4. By controlling switch T1, the reverse recovery characteristics of D2 can be tested.
[0120] With SW1 disconnected, SW2 closed, SW4 disconnected, SW5 closed, SW6 disconnected, SW7 disconnected, and SW8 closed, T2 and T3 closed, and T4 normally open, the reverse recovery characteristic of D3 can be tested by controlling switch T1.
[0121] Close SW1, open SW2, open SW4, open SW5, close SW6, close SW7, open SW8, then close T1 and T4, and keep T3 normally open. By controlling switch T2, the reverse recovery characteristics of D4 can be tested.
[0122] S3, Short Circuit Test:
[0123] Disconnect SW1, close SW2, close SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, and then close T2, T3, and T4. By controlling switch T1, the short-circuit characteristics of T1 can be tested.
[0124] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T3, and T4. By controlling switch T2, the short-circuit characteristics of T2 can be tested.
[0125] Close SW1, open SW2, close SW4, close SW5, open SW6, open SW7, close SW8, then close T1, T2, and T4, controlling switch T3 to perform a short-circuit characteristic test on T3;
[0126] Disconnect SW1, close SW2, close SW4, disconnect SW5, close SW6, close SW7, disconnect SW8, then close T1, T2, and T4, and control switch T3 to perform a short-circuit characteristic test on T4.
[0127] Example 2
[0128] This embodiment uses the aforementioned power module dynamic test circuit to perform tests such as... Figure 3 The power module with the configuration shown in the dashed box was tested. This three-level power module includes four controllable switching devices and two diodes. The four controllable switching devices are T1, T2, T3, and T4, and each controllable switching device is either an IGBT or a MOSFET. The two diodes are D3 and D4, and the diodes connected to T1 and T2 are D1 and D2, respectively.
[0129] The C pole of T1 is connected to the positive terminal P, the C pole of T2 is connected to the E pole of T1, the E pole of T2 is connected to the negative terminal N, the E pole of T1 is also connected to the E pole of T3, the C pole of T4 and the AC terminal, the anode of D3 is connected to the middle pole terminal M, the cathode of D3 is connected to the C pole of T3, the anode of D4 is connected to the E pole of T4, and the cathode of D4 is connected to the middle pole terminal M;
[0130] In the following test process, the power module dynamic test circuit is used as the peripheral circuit for testing the power module, SW0 needs to be kept closed, the G pole and the E pole of the controllable switching devices T1, T2, T3 and T4 in the power module need to be connected to the external control circuit, and the external control circuit controls T1, T2, T3 and T4 to perform switching actions, and how the controllable switching devices such as IGBT or MOS tube are controlled by the external control circuit belongs to the conventional technology in the field, which will not be described in detail here.
[0131] The method for testing the dynamic performance of the three-level power module comprises the following steps:
[0132] S1, switching characteristic test:
[0133] SW1 is opened, SW2 is closed, SW4 is opened, SW5 is closed, SW6 is closed, SW7 is opened, SW8 is opened, T2, T3 and T4 are then closed, and the switching characteristic test of T1 is realized by controlling T1.
[0134] SW1 is closed, SW2 is opened, SW4 is opened, SW5 is closed, SW6 is closed, SW7 is opened, SW8 is opened, T1, T3 and T4 are then closed, and the switching characteristic test of T2 is realized by controlling T2.
[0135] SW1 is opened, SW2 is closed, SW4 is opened, SW5 is opened, SW6 is closed, SW7 is closed, SW8 is opened, T1, T2 and T4 are then closed, and the switching characteristic test of T3 is realized by controlling T3.
[0136] SW1 is closed, SW2 is opened, SW4 is opened, SW5 is closed, SW6 is opened, SW7 is opened, SW8 is closed, T1, T2 and T3 are then closed, and the switching characteristic test of T4 is realized by controlling T4.
[0137] S2, reverse recovery test:
[0138] SW1 is closed, SW2 is opened, SW4 is opened, SW5 is closed, SW6 is closed, SW7 is opened, SW8 is opened, T1, T3 and T4 are then closed, and the reverse recovery characteristic test of D1 is realized by controlling T2.
[0139] Disconnect SW1, close SW2, disconnect SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, then close T2, T3, and T4, and control switch T1 to test the reverse recovery characteristics of D2.
[0140] S3, Short Circuit Test:
[0141] Disconnect SW1, close SW2, close SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, and then close T2, T3, and T4. By controlling switch T1, the short-circuit characteristics of T1 can be tested.
[0142] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T3, and T4. By controlling switch T2, the short-circuit characteristics of T2 can be tested.
[0143] Disconnect SW1, close SW2, close SW4, disconnect SW5, close SW6, close SW7, disconnect SW8, then close T1, T2, and T4. By controlling switch T3, the short-circuit characteristics of switch T3 can be tested.
[0144] Close SW1, open SW2, close SW4, close SW5, open SW6, open SW7, close SW8, and then close T1, T2, and T3. By controlling switch T4, the short-circuit characteristics of T4 can be tested.
[0145] Example 3
[0146] This embodiment uses the aforementioned power module dynamic test circuit to perform tests such as... Figure 4 The power module with the configuration shown in the dashed box was tested. This three-level power module includes four controllable switching devices, namely T1, T2, T3, and T4. The controllable switching devices are IGBTs or MOSFETs. The diodes connected to T1, T2, T3, and T4 are D1, D2, D3, and D4, respectively.
[0147] The collector (C) of T1 is connected to the positive terminal P, the emitter (E) of T1 is connected to the collector (C) of T2, the emitter (E) of T2 is connected to the negative terminal N, the emitter (E) of T1 is also connected to the emitter (E) of T3 and the AC terminal AC, the collector (C) of T3 is connected to the collector (C) of T4, and the emitter (E) of T4 is connected to the intermediate terminal M.
[0148] In the following test process, the power module dynamic test circuit is used as the peripheral circuit for testing the power module, SW0 needs to be kept closed, the G pole and the E pole of the controllable switching devices T1, T2, T3 and T4 in the power module need to be connected to the external control circuit, and the external control circuit controls T1, T2, T3 and T4 to perform switching actions, how the controllable switching devices such as IGBT or MOS tube are controlled by the external control circuit belongs to the conventional technology in the field, and will not be described in detail here.
[0149] The method for dynamically testing the three-level power module comprises the following steps:
[0150] S1, switching characteristic test:
[0151] SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, T2, T3 and T4 are then closed, and the switching characteristic test of T1 is realized by controlling the T1 switch.
[0152] SW1 is closed, SW2 is disconnected, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, T1 and T3 are then closed, and the switching characteristic test of T2 is realized by controlling the T2 switch.
[0153] SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is disconnected, SW6 is closed, SW7 is closed, SW8 is disconnected, T1, T2 and T4 are then closed, and the switching characteristic test of T3 is realized by controlling the T3 switch.
[0154] SW1 is closed, SW2 is disconnected, SW4 is disconnected, SW5 is closed, SW6 is disconnected, SW7 is disconnected, SW8 is closed, T1, T2 and T3 are then closed, and the switching characteristic test of T4 is realized by controlling the T4 switch.
[0155] S2, reverse recovery test:
[0156] SW1 is closed, SW2 is disconnected, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, T1, T3 and T4 are then closed, and the reverse recovery characteristic test of D1 is realized by controlling the T2 switch.
[0157] SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, T2, T3 and T4 are then closed, and the reverse recovery characteristic test of D2 is realized by controlling the T1 switch.
[0158] Close SW1, open SW2, open SW4, open SW5, close SW6, close SW7, open SW8, then close T1 and T3, and keep T4 normally open. By controlling switch T2, the reverse recovery characteristics of D3 can be tested.
[0159] With SW1 disconnected, SW2 closed, SW4 disconnected, SW5 closed, SW6 disconnected, SW7 disconnected, and SW8 closed, T2 and T4 closed, and T3 normally open, the reverse recovery characteristic of D4 can be tested by controlling switch T1.
[0160] S3, Short Circuit Test:
[0161] Disconnect SW1, close SW2, close SW4, close SW5, close SW6, disconnect SW7, disconnect SW8, and then close T2, T3, and T4. By controlling switch T1, the short-circuit characteristics of T1 can be tested.
[0162] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T3, and T4. By controlling switch T2, the short-circuit characteristics of T2 can be tested.
[0163] Disconnect SW1, close SW2, close SW4, disconnect SW5, close SW6, close SW7, disconnect SW8, then close T1, T2, and T4. By controlling switch T3, the short-circuit characteristics of switch T3 can be tested.
[0164] Close SW1, open SW2, close SW4, close SW5, open SW6, open SW7, close SW8, and then close T1, T2, and T3. By controlling switch T4, the short-circuit characteristics of T4 can be tested.
[0165] Example 4
[0166] This embodiment uses the aforementioned power module dynamic test circuit to perform tests such as... Figure 5 The power module with the configuration shown in the dashed box was tested. This three-level power module includes six controllable switching devices, namely T1, T2, T3, T4, T5, and T6. These controllable switching devices are either IGBTs or MOSFETs. The diodes connected to T1, T2, T3, T4, T5, and T6 are respectively D1, D2, D3, D4, D5, and D6.
[0167] The C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the C pole of T3, the E pole of T3 is connected to the C pole of T4, the E pole of T4 is connected to the negative terminal N, the E pole of T5 and the C pole of T6 are both connected to the middle terminal M, the C pole of T5 is connected to the E pole of T1, the E pole of T6 is connected to the E pole of T3, and the E pole of T2 is also connected to the AC terminal AC;
[0168] In the following test process, the power module dynamic test circuit is used as the peripheral circuit for testing the power module, SW0 needs to be kept closed, the G pole and the E pole of the controllable switching devices T1, T2, T3, T4, T5 and T6 in the power module need to be connected to the external control circuit, and the switching action of T1, T2, T3, T4, T5 and T6 is controlled by the external control circuit. How the controllable switching devices such as IGBT or MOS tube are controlled by the external control circuit belongs to the conventional technology in the field, and will not be described in detail here.
[0169] The method for testing the dynamic performance of the three-level power module comprises the following steps:
[0170] S1, switching characteristic test:
[0171] SW1 is disconnected, SW2 is connected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, T3, T4, T5 and T6 are closed, T2 is always open, the switching characteristic test of T1 is realized by controlling the T1 switch.
[0172] SW1 is disconnected, SW2 is connected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, T3, T4, T5 and T6 are closed, T1 is always open, the switching characteristic test of T2 is realized by controlling the T2 switch.
[0173] SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, T1, T2, T5 and T6 are closed, T4 is always open, the switching characteristic test of T3 is realized by controlling the T3 switch.
[0174] SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, T1, T2, T5 and T6 are closed, T3 is always open, the switching characteristic test of T4 is realized by controlling the T4 switch.
[0175] SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is disconnected, SW7 is disconnected, and SW8 is connected, T1, T2, T3, T4 and T6 are closed, and the switching characteristic test of T5 is realized by controlling the T5 switch.
[0176] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T2, T3, T4, T5, and control T6 switch to realize the switch characteristic test of T6;
[0177] S2, reverse recovery test:
[0178] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T5, T6, and control T3 switch to realize the reverse recovery characteristic test of D1;
[0179] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T1, T5, T6, and control T3 switch to realize the reverse recovery characteristic test of D2;
[0180] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T3, T5, T6, and control T1 switch to realize the reverse recovery characteristic test of D3;
[0181] Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, then close T4, T5, T6, and control T1 switch to realize the reverse recovery characteristic test of D4;
[0182] Close SW1, open SW2, open SW4, close SW5, open SW6, open SW7, close SW8, then close T3, T4, T5, T6, and control T1 switch to realize the reverse recovery characteristic test of D5;
[0183] Close SW1, open SW2, open SW4, open SW5, close SW6, close SW7, open SW8, then close T1, T2, T5, T6, and control T4 switch to realize the reverse recovery characteristic test of D6;
[0184] S3, short circuit test:
[0185] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, close SW8, then close T3, T4, T6, and control T1 switch to realize the short circuit characteristic test of T1;
[0186] Close SW1, open SW2, close SW4, close SW5, close SW6, close SW7, open SW8, then close T1, T2, T5, T6, open T4, by controlling T3 switch, realize the short circuit characteristic test of T3;
[0187] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, close SW8, then close T1, T2, T5, T6, open T4, by controlling T3 switch, realize the short circuit characteristic test of T3;
[0188] Close SW1, open SW2, close SW4, close SW5, close SW6, close SW7, open SW8, then close T1, T2, T5, T6, open T4, by controlling T3 switch, realize the short circuit characteristic test of T3;
[0189] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, close SW8, then close T1, T2, T5, T6, open T4, by controlling T3 switch, realize the short circuit characteristic test of T3;
[0190] Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, close SW8, then close T1, T2, T5, T6, open T4, by controlling T3 switch, realize the short circuit characteristic test of T3.
[0191] Although the specific embodiments of the present application are described above, those skilled in the art should understand that these are only examples, and various changes or modifications can be made to the present embodiments without departing from the principles and essence of the present application, and the protection scope of the present application is only defined by the appended claims.
Claims
1. A power module dynamic test circuit, characterized by, The three-level power module comprises four controllable switching devices, and the four controllable switching devices are T1, T2, T3 and T4. The positive electrode of the energy storage capacitor C1 is connected to the positive electrode terminal P through SW5, and the negative electrode of the energy storage capacitor C1 is connected to the negative electrode terminal N through SW6. The energy storage capacitor C1 is 100-3000uf, and the load inductor L1 is 1-1000uH. The energy storage capacitor C1 is an electrolytic capacitor or a film capacitor.
2. The power module dynamic test circuit of claim 1, wherein, The load inductor L1 is a hollow inductor.
3. The power module dynamic test circuit of claim 1, wherein, The three-level power module comprises four controllable switching devices, and the four controllable switching devices are T1, T2, T3 and T4.
4. The power module dynamic test circuit of claim 1, wherein, The C pole of T1 is connected to the positive electrode terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the negative electrode terminal N, the AC terminal and the C pole of T3 are connected to the E pole of T1, the E pole of T3 is connected to the E pole of T4, and the C pole of T4 is connected to the middle electrode terminal M.
5. The power module dynamic test circuit of claim 1, wherein, The method for testing the dynamic performance of the three-level power module comprises the following steps:
6. A test method for a power module dynamic test circuit according to any one of claims 1 to 5, characterized in that, S1, switch characteristic test: Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, and open SW8, then close T2, T3 and T4, and control T1 to realize the switch characteristic test of T1; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, and open SW8, then close T1, T3 and T4, and control T2 to realize the switch characteristic test of T2; Close SW1, open SW2, open SW4, close SW5, open SW6, open SW7, and close SW8, then close T1, T2 and T4, and control T3 to realize the switch characteristic test of T3; Open SW1, close SW2, open SW4, open SW5, close SW6, close SW7, and open SW8, then close T1, T2 and T3, and control T4 to realize the switch characteristic test of T4; S2, reverse recovery test: Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 to realize the reverse recovery characteristic test of D1; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T2, T3, T4, and control T1 to realize the reverse recovery characteristic test of D2; Close SW1, open SW2, open SW4, close SW5, open SW6, open SW7, close SW8, and then close T2, T3, and control T1 to realize the reverse recovery characteristic test of D3; Close SW1, open SW2, open SW4, open SW5, close SW6, close SW7, open SW8, and then close T1, T4, and control T2 to realize the reverse recovery characteristic test of D4; S3, short circuit test: Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, open SW8, and then close T2, T3, T4, and control T1 to realize the short circuit characteristic test of T1; Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 to realize the short circuit characteristic test of T2; Close SW1, open SW2, close SW4, close SW5, open SW6, open SW7, close SW8, and then close T1, T2, T4, and control T3 to realize the short circuit characteristic test of T3; Close SW1, open SW2, close SW4, open SW5, close SW6, close SW7, open SW8, and then close T1, T2, T4, and control T3 to realize the short circuit characteristic test of T4.
7. A method of testing a power module dynamic test circuit according to any one of claims 1 to 5, characterized by, The three-level power module comprises four controllable switching devices and two diodes, the four controllable switching devices are T1, T2, T3 and T4 respectively, the controllable switching devices are IGBT or MOS tube, the two diodes are D3 and D4 respectively, the diodes connected to T1 and T2 are D1 and D2 respectively, wherein: The C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the negative terminal N, the E pole of T1 is also connected to the E pole of T3, the C pole of T4 and the alternating current terminal AC, the anode of D3 is connected to the middle pole terminal M, the cathode of D3 is connected to the C pole of T3, the anode of D4 is connected to the E pole of T4, and the cathode of D4 is connected to the middle pole terminal M; The method for testing the dynamic performance of the three-level power module comprises the following steps: S1, switching characteristic test: Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, open SW8, and then close T2, T3, T4, and control T1 to realize the switching characteristic test of T1; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 to test the switching characteristic of T2; Open SW1, close SW2, open SW4, open SW5, close SW6, close SW7, open SW8, and then close T1, T2, T4, and control T3 to test the switching characteristic of T3; Close SW1, open SW2, open SW4, close SW5, open SW6, open SW7, close SW8, and then close T1, T2, T3, and control T4 to test the switching characteristic of T4. S2, reverse recovery test: Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 to test the reverse recovery characteristic of D1; Open SW1, close SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T2, T3, T4, and control T1 to test the reverse recovery characteristic of D2; S3, short circuit test: Open SW1, close SW2, close SW4, close SW5, close SW6, open SW7, open SW8, and then close T2, T3, T4, and control T1 to test the short circuit characteristic of T1; Close SW1, open SW2, close SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 to test the short circuit characteristic of T2; Open SW1, close SW2, close SW4, open SW5, close SW6, close SW7, open SW8, and then close T1, T2, T4, and control T3 to test the short circuit characteristic of T3; Close SW1, open SW2, close SW4, close SW5, open SW6, open SW7, close SW8, and then close T1, T2, T3, and control T4 to test the short circuit characteristic of T4.
8. A method of testing a power module dynamic test circuit as claimed in any one of claims 1 to 5, characterized in that, The three-level power module comprises four controllable switching devices, which are T1, T2, T3 and T4 respectively, and the controllable switching devices are IGBT or MOS tube, and the diodes connected to T1, T2, T3 and T4 are D1, D2, D3 and D4 respectively, wherein: The C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the negative terminal N, the E pole of T1 is also connected to the E pole of T3 and the alternating current terminal AC, the C pole of T3 is connected to the C pole of T4, and the E pole of T4 is connected to the middle pole terminal M; The method for testing the dynamic performance of the three-level power module comprises the following steps: S1, switching characteristic test: Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 switch to realize the reverse recovery characteristic test of D1; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 switch to realize the reverse recovery characteristic test of D1; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 switch to realize the reverse recovery characteristic test of D1; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 switch to realize the reverse recovery characteristic test of D1; S3, short circuit test: Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T2, T3, T4, and control T1 switch to realize the short circuit characteristic test of T1; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 switch to realize the short circuit characteristic test of T2; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 switch to realize the short circuit characteristic test of T2; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 switch to realize the short circuit characteristic test of T2; Close SW1, open SW2, open SW4, close SW5, close SW6, open SW7, open SW8, and then close T1, T3, T4, and control T2 switch to realize the short circuit characteristic test of T2. 9. A method of testing a power module dynamic test circuit as claimed in any one of claims 1 to 5, characterized in that, The three-level power module comprises six controllable switching devices, and the six controllable switching devices are T1, T2, T3, T4, T5 and T6 respectively, the controllable switching devices are IGBT or MOS tube, the diodes connected to T1, T2, T3, T4, T5 and T6 are D1, D2, D3, D4, D5 and D6 respectively, wherein: The C pole of T1 is connected to the positive terminal P, the E pole of T1 is connected to the C pole of T2, the E pole of T2 is connected to the C pole of T3, the E pole of T3 is connected to the C pole of T4, the E pole of T4 is connected to the negative terminal N, the E pole of T5 and the C pole of T6 are both connected to the middle terminal M, the C pole of T5 is connected to the E pole of T1, the E pole of T6 is connected to the E pole of T3, and the E pole of T2 is also connected to the alternating current terminal AC; The method for testing the dynamic performance of the three-level power module comprises the following steps: S1, switching characteristic test: SW1 is disconnected, SW2 is connected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, then T3, T4, T5 and T6 are turned off, T2 is always on, the switching characteristic of T1 is tested by controlling the T1 switch; SW1 is disconnected, SW2 is connected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, then T3, T4, T5 and T6 are turned off, T1 is always on, the switching characteristic of T2 is tested by controlling the T2 switch; SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, then T1, T2, T5 and T6 are turned off, T4 is always on, the switching characteristic of T3 is tested by controlling the T3 switch; SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, then T1, T2, T5 and T6 are turned off, T3 is always on, the switching characteristic of T4 is tested by controlling the T4 switch; SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is disconnected, SW7 is disconnected, SW8 is connected, then T1, T2, T3 and T4 are turned off, the switching characteristic of T6 is tested by controlling the T5 switch; SW1 is disconnected, SW2 is connected, SW4 is disconnected, SW5 is disconnected, SW6 is connected, SW7 is connected, SW8 is disconnected, then T1, T2, T3 and T4 are turned off, the switching characteristic of T6 is tested by controlling the T6 switch; S2, reverse recovery test: SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, then T1 and T5 are turned off, T2 and T4 are always on, the reverse recovery characteristic of D1 is tested by controlling the T3 switch; SW1 is connected, SW2 is disconnected, SW4 is disconnected, SW5 is connected, SW6 is connected, SW7 is disconnected, SW8 is disconnected, then T1 and T5 are turned off, T1 and T4 are always on, the reverse recovery characteristic of D2 is tested by controlling the T3 switch; SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, and then T3, T5, T6 are closed, T2, T4 are always open, by controlling T1 switch, the reverse recovery characteristic test of D3 is realized; SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is disconnected, and then T4, T5, T6 are closed, T2, T3 are always open, by controlling T1 switch, the reverse recovery characteristic test of D4 is realized; SW1 is disconnected, SW2 is closed, SW4 is disconnected, SW5 is closed, SW6 is disconnected, SW7 is disconnected, SW8 is closed, and then T3, T4, T5, T6 are closed, T2 is always open, by controlling T1 switch, the reverse recovery characteristic test of D5 is realized; SW1 is closed, SW2 is disconnected, SW4 is disconnected, SW5 is disconnected, SW6 is closed, SW7 is closed, SW8 is disconnected, and then T1, T2, T5, T6 are closed, T3 is always open, by controlling T4 switch, the reverse recovery characteristic test of D6 is realized; S3, short circuit test: SW1 is disconnected, SW2 is closed, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is closed, and then T3, T4, T6 are closed, T2, T5 are always open, by controlling T1 switch, the short circuit characteristic test of T1 is realized; SW1 is disconnected, SW2 is closed, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is closed, SW8 is disconnected, and then T3, T4, T5, T6 are closed, T1 is always open, by controlling T2 switch, the short circuit characteristic test of T2 is realized; SW1 is closed, SW2 is disconnected, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is closed, and then T1, T2, T5, T6 are closed, T4 is always open, by controlling T3 switch, the short circuit characteristic test of T3 is realized; SW1 is closed, SW2 is disconnected, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is closed, SW8 is disconnected, and then T3, T4, T5 are closed, T3, T6 are always open, by controlling T4 switch, the short circuit characteristic test of T4 is realized; SW1 is closed, SW2 is disconnected, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is disconnected, SW8 is closed, and then T2, T3, T4, T6 are closed, T1 is always open, by controlling T5 switch, the short circuit characteristic test of T5 is realized; SW1 is disconnected, SW2 is closed, SW4 is closed, SW5 is closed, SW6 is closed, SW7 is closed, SW8 is disconnected, and then T1, T2, T3, T5 are closed, T4 is always open, by controlling T6 switch, the short circuit characteristic test of T6 is realized.
Citation Information
Patent Citations
Power module dynamic test circuit
CN220171181U