A semiconductor-controlled inner content channel case structure and a control method

Abstract

The application relates to a kind of semiconductor-controlled inner channel casing structure and control method, belong to turbofan engine technical field.The present application solves the problem that the temperature control structure of current turbofan engine usually adopts electric heating and engine bleed air heating mode for poor temperature control flexibility.The application comprises inner channel casing, outer channel casing, fan blade, rotor and compressor blade, the rotor is provided with fan blade and compressor blade, the outer side of the rotor is arranged with outer channel casing, the inner channel casing is arranged between the outer channel casing and the rotor, the inner channel casing is arranged above the compressor blade, the inner channel casing comprises heat-conducting fin, outer side, semiconductor refrigerating sheet and inner side, the heat-conducting fin, outer side, semiconductor refrigerating sheet and inner side are sequentially arranged from outside to inside.The inner channel casing structure of the application can flexibly control temperature according to the intake temperature of compressor, and realizes the stable operation of turbofan engine.

Description

Technical Field

[0001] This invention belongs to the field of turbofan engine technology, specifically an internal turbine casing structure and control method with semiconductor control. Background Technology

[0002] In current turbofan engines, the air drawn in by the turbofan is fed into both the inner and outer bypass ducts. The air in the inner duct is pressurized, combusted, and expands to generate power, while the air in the outer bypass duct cools the combustion chamber and provides oxygen for secondary combustion of the fuel, thus generating thrust. However, the temperature of the air drawn in by the turbofan varies depending on the environment, affecting engine efficiency and safety. Therefore, temperature control structures typically employ electric heating and engine bleed air heating, with flexible temperature control solutions being extremely rare.

[0003] Therefore, this application proposes an inner duct casing structure and control method that can flexibly control the compressor inlet air temperature to solve the above problems. Summary of the Invention

[0004] The purpose of this invention is to address the problem that current temperature control structures for turbofan engines, which typically employ electric heating and engine bleed air heating, suffer from poor temperature control flexibility. A brief overview of the invention is provided below to offer a basic understanding of certain aspects of it. It should be understood that this overview is not an exhaustive summary of the invention. It is not intended to identify key or essential parts of the invention, nor is it intended to limit the scope of the invention.

[0005] The technical solution of this invention:

[0006] Option 1: An inner duct casing structure with semiconductor control, comprising an inner duct casing, an outer bypass casing, turbofan blades, a rotor, and compressor blades. The rotor is provided with turbofan blades and compressor blades. The outer bypass casing is arranged outside the rotor. The inner duct casing is arranged between the outer bypass casing and the rotor. The inner duct casing is arranged above the compressor blades. The inner duct casing includes heat-conducting fins, an outer surface, a semiconductor cooling chip, and an inner surface, arranged sequentially from the outside to the inside.

[0007] Furthermore, the flow channel region formed between the outer side surface and the outer bypass casing is the outer bypass, and the flow channel region formed between the inner side surface and the outer surface of the rotor is the inner bypass.

[0008] Furthermore, the outer surface, the semiconductor cooling chip, and the inner surface have a streamlined structure, and multiple heat-conducting fins are evenly distributed on the outer surface.

[0009] Option 2: An inner channel casing control method incorporating semiconductor control, which is based on the inner channel casing structure incorporating semiconductor control described in Option 1, includes the following steps:

[0010] Step 1: Start the turbo fan and monitor the compressor inlet temperature;

[0011] Step 2: When the compressor inlet temperature is low, the semiconductor refrigeration chip is energized in the forward direction, which heats the inner side and cools the outer side.

[0012] Step 3: When the compressor inlet temperature is high, reverse the direction of the current flowing through the semiconductor refrigeration chip to cool the inner side and heat the outer side.

[0013] Step 4: The compressor operates stably within a suitable temperature range. When cooling and heating cannot meet the normal operation of the compressor, the operating current supplied to the thermoelectric cooler is increased to enhance the cooling and heating process of the thermoelectric cooler.

[0014] Furthermore, the specific steps of step two are as follows:

[0015] When the compressor inlet temperature is below 5℃, a rated current of 3A is passed into the semiconductor cooling chip in the forward direction to heat the inner side and cool the outer side, ensuring de-icing efficiency and cooling of the air as it passes through the combustion chamber in the outer bypass section.

[0016] When the compressor inlet temperature is between 5℃ and 15℃, the current flowing through the semiconductor refrigeration chip is 0 to 3A, achieving energy saving.

[0017] Furthermore, the specific steps of step three are as follows:

[0018] When the compressor inlet temperature is between 25℃ and 35℃, the current applied to the semiconductor cooling chip is adjusted to 0 to -3A, so that the inner side is cooled and the outer side is heated, ensuring the compressor runs smoothly and the engine performs at its best and fuel efficiency.

[0019] When the compressor inlet temperature exceeds 35°C, a rated current of -3A is applied to reduce the inlet temperature, according to the cooling requirements.

[0020] The present invention has the following beneficial effects:

[0021] 1. The present invention provides an inner duct casing structure with semiconductor control. The inner duct casing employs a semiconductor sandwich design to achieve flexible control of the compressor inlet temperature, ensuring stable operation of the turbofan engine. Utilizing the cooling properties of semiconductors, the inner duct can be heated while the outer bypass duct is cooled, thereby increasing the compressor inlet temperature to prevent low-temperature intake and reducing the outer bypass duct inlet temperature to enhance combustion chamber cooling.

[0022] 2. The semiconductor refrigeration chip with semiconductor control and an inner channel casing structure of the present invention can adjust the direction and magnitude of the current as needed, so as to reverse the hot and cold ends and change the cooling and heating intensity, thereby achieving a stable intake temperature. Attached Figure Description

[0023] Figure 1 This is a partial half-section view of an internal casing structure containing semiconductor control.

[0024] Figure 2 yes Figure 1 Sectional view along line AA;

[0025] Figure 3 This is a flowchart illustrating an internal channel casing control method incorporating semiconductor control.

[0026] Figure 4 This is a schematic diagram of the operation control logic of a semiconductor refrigeration chip.

[0027] In the diagram: 1-heat-conducting fin, 2-outer surface, 3-semiconductor cooling chip, 4-inner surface, 5-outer bypass casing, 6-turbofan blade, 7-rotor, 8-compressor blade. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of the present invention clearer, the present invention is described below with reference to specific embodiments shown in the accompanying drawings. However, it should be understood that these descriptions are merely exemplary and not intended to limit the scope of the invention. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concept of the present invention.

[0029] The connections mentioned in this invention are divided into fixed connections and detachable connections. Fixed connections (i.e., non-detachable connections) include, but are not limited to, conventional fixed connection methods such as folded connections, riveted connections, adhesive connections, and welded connections. Detachable connections include, but are not limited to, conventional disassembly methods such as threaded connections, snap-fit ​​connections, pin connections, and hinged connections. When a specific connection method is not explicitly defined, it is assumed that at least one existing connection method can always be found to achieve the function, and those skilled in the art can choose according to their needs. For example, a welded connection can be chosen for fixed connections, and a hinged connection can be chosen for detachable connections.

[0030] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0031] Example 1, combined with Figures 1-3This embodiment describes an inner duct casing structure with semiconductor control, comprising an inner duct casing, an outer bypass casing 5, turbofan blades 6, a rotor 7, and compressor blades 8. The rotor 7 is provided with turbofan blades 6 and compressor blades 8. The outer bypass casing 5 is arranged outside the rotor 7, and the inner duct casing is arranged between the outer bypass casing 5 and the rotor 7. The inner duct casing is arranged above the compressor blades 8. The inner duct casing includes heat-conducting fins 1, an outer surface 2, a semiconductor cooling chip 3, and an inner surface 4, arranged sequentially from the outside to the inside.

[0032] The flow channel area formed between the outer side 2 of the inner casing and the outer bypass casing 5 is the outer bypass, and the area formed between the inner side 4 and the outer surface of the rotor is the inner casing. The outer side 2, the semiconductor cooling chip 3, and the inner side 4 have a streamlined structure. Multiple heat-conducting fins 1 are provided on the outer side 2, and their tops have a gradually increasing streamlined structure along the airflow direction.

[0033] Based on the compressor's intake air temperature, when the intake air is at a low temperature, the thermoelectric cooler 3 is forward-energized, causing the inner duct to release heat and increase the intake air temperature, while the outer bypass duct cools down, enhancing the heat dissipation of the external airflow combustion chamber. When the intake air is at a high temperature, the thermoelectric cooler 3 is reverse-energized, causing the inner duct to cool and absorb heat, effectively reducing the intake air temperature of the inner duct and improving the operational stability of the turbofan engine.

[0034] Example 2, combined with Figures 1-3 This embodiment describes an internal casing control method incorporating semiconductor control, comprising the following steps:

[0035] Step 1: Start the turbo fan and monitor the compressor inlet temperature;

[0036] Step 2: When the compressor inlet temperature is too low, the semiconductor cooling chip 3 is energized in the forward direction, causing the inner side 4 to heat up and the outer side 2 to cool down.

[0037] When the compressor inlet temperature is below 5℃, the semiconductor cooling chip 3 is supplied with a rated current of 3A in the forward direction, which heats the inner side 4 and cools the outer side 2, ensuring de-icing efficiency and cooling of the air as it passes through the combustion chamber in the outer bypass section.

[0038] When the compressor inlet temperature is between 5℃ and 15℃, the current of 0 to 3A, i.e. (15-T) / 3A, is passed through the semiconductor refrigeration chip 3 to achieve the effect of energy saving.

[0039] Step 3: If the compressor inlet temperature is too high, reverse the direction of the current flowing through the semiconductor cooling chip 3 to cool the inner side 4 and heat the outer side 2.

[0040] When the compressor inlet temperature is between 25℃ and 35℃, the current applied to the semiconductor cooling chip 3 is adjusted to 0 to -3A, i.e. (35-T) / 3A, so that the inner side 4 is cooled and the outer side 2 is heated, ensuring the stable operation of the compressor and the best engine performance and fuel efficiency.

[0041] When the compressor inlet temperature is greater than 35℃, a rated current of -3A is applied to reduce the inlet temperature according to the cooling requirement.

[0042] Step 4: The compressor operates stably within a suitable temperature range. When cooling and heating cannot meet the normal operation of the compressor, the operating current supplied to the semiconductor refrigeration chip 3 is increased to enhance the cooling and heating process of the semiconductor refrigeration chip 3.

[0043] The semiconductor cooler 3 mainly utilizes the Peltier effect, that is, by passing an electric current, one side of the semiconductor cooler 3 is cooled while the other side is heated. The heat generated is:

[0044] Q = (Π) N -Π P )I

[0045] Where: Π is the Peltier coefficient, which, according to the Thomson effect, should only be related to the current absolute temperature of the semiconductor.

[0046] Π=S·T

[0047] Where S is the Seebeck coefficient, which is only related to the properties of semiconductor materials.

[0048] Therefore, the cooling efficiency of a semiconductor element is only related to the current intensity and heat dissipation from its end face. Furthermore, since semiconductor elements operate at temperatures ranging from -60℃ to 90℃, and heat transfer through the end face within the turbine engine is not considered, taking the TEC-12703 as an example, the semiconductor contact surface size S = 0.04 * 0.04 mm... 2 When the rated current is applied, the cooling power on the cooling side is Q = 18W. Therefore, this type of component is used in this design, and a ring-shaped parallel arrangement is adopted in the middle interlayer of the inner channel. Its total cooling capacity is:

[0049]

[0050] Furthermore, when the power is applied in reverse, the inner wall of the turbine engine bypass duct is cooled, and the resulting cooling capacity is entirely used to cool the intake air temperature, thereby reducing the air temperature by:

[0051]

[0052] Where: M is the air mass flow rate at the inlet of the turbofan duct, and ΔT is the temperature change. After simplification, we can obtain:

[0053]

[0054] Therefore, under stable operating conditions, the cooling capacity of a turbine engine is always positively correlated with the current intensity before the semiconductor element reaches its maximum current. Within the maximum current range, the inlet temperature can be controlled by controlling the current.

[0055] Optimizing the intake air temperature to its optimal range helps provide the best engine performance and fuel efficiency. However, the optimal temperature range may vary slightly between different engine manufacturers and models, and is also affected by climate conditions and flight altitude. Furthermore, the semiconductors used in different configurations vary depending on the specific aircraft assembly, resulting in differences in performance. Therefore, when applying this invention to aircraft with turbofan engines, the inlet temperature range and control logic need to be adjusted accordingly based on actual usage requirements.

[0056] This embodiment is merely an exemplary illustration of this patent and does not limit its scope of protection. Those skilled in the art can make partial changes to it, as long as they do not exceed the spirit and essence of this patent, they are all within the scope of protection of this patent.

Claims

1. A semiconductor-controlled internal flowpath cartridge structure comprising: It includes an inner duct casing, an outer bypass casing (5), turbofan blades (6), a rotor (7) and compressor blades (8). The rotor (7) is provided with turbofan blades (6) and compressor blades (8). The outer bypass casing (5) is arranged on the outside of the rotor (7). The inner duct casing is arranged between the outer bypass casing (5) and the rotor (7). The inner duct casing is arranged above the compressor blades (8). The inner duct casing includes heat-conducting fins (1), an outer side (2), a semiconductor cooling chip (3) and an inner side (4). The heat-conducting fins (1), the outer side (2), the semiconductor cooling chip (3) and the inner side (4) are arranged sequentially from the outside to the inside. The flow channel area formed between the outer side surface (2) and the outer bypass casing (5) is the outer bypass, and the flow channel area formed between the inner side surface (4) and the outer surface of the rotor (7) is the inner bypass. The outer side (2), the semiconductor cooling chip (3) and the inner side (4) are streamlined. Multiple heat-conducting fins (1) are evenly distributed on the outer side (2). The semiconductor cooling chip can adjust the direction and magnitude of the current according to the needs, so that the hot and cold ends can be reversed and the cooling and heating intensity can be changed.

2. A semiconductor-controlled inner channel casing control method, the method being implemented based on the semiconductor-controlled inner channel casing structure described in claim 1, characterized in that, Includes the following steps: Step 1: Start the turbo fan and monitor the compressor inlet temperature; Step 2: When the compressor inlet temperature is low, the semiconductor cooling chip (3) is energized in the forward direction, so that the inner side (4) heats up and the outer side (2) cools down. Step 3: When the compressor inlet temperature is high, reverse the direction of the current flowing into the semiconductor cooling chip (3) so that the inner side (4) is cooled and the outer side (2) is heated. Step 4: The compressor operates stably within a suitable temperature range. When cooling and heating cannot meet the normal operation of the compressor, the operating current of the semiconductor refrigeration chip (3) is increased to enhance the cooling and heating process of the semiconductor refrigeration chip (3).

3. The inner channel casing control method with semiconductor control according to claim 2, characterized in that, The specific steps of step two are as follows: When the compressor inlet temperature is below 5°C, the semiconductor cooling chip (3) is supplied with a rated current of 3A in the forward direction, so that the inner side (4) is heated and the outer side (2) is cooled, ensuring the de-icing efficiency and the cooling and heat dissipation of air in the outer bypass section after passing through the combustion chamber. When the compressor inlet temperature is between 5℃ and 15℃, the semiconductor cooling chip (3) is supplied with a current of 0 to 3A to achieve energy saving.

4. The inner channel casing control method with semiconductor control according to claim 3, characterized in that, The specific steps of step three are as follows: When the compressor inlet temperature is between 25℃ and 35℃, the current in the semiconductor cooling chip (3) is adjusted to 0 to -3A, so that the inner side (4) is cooled and the outer side (2) is heated, ensuring the compressor runs smoothly and the engine performs at its best and fuel efficiency. When the compressor inlet temperature exceeds 35°C, a rated current of -3A is applied to reduce the inlet temperature, according to the cooling requirements.

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