Method and system for forming temperature compensation distribution map, and temperature compensation method

Abstract

A method and system for forming a temperature compensation distribution map, and a temperature compensation method, wherein the method includes: obtaining a wafer plane, the wafer plane including an edge contour and a temperature compensation region enclosed by the edge contour; obtaining a first temperature compensation distribution map for the temperature compensation region, the first temperature compensation distribution map having a plurality of first compensation points distributed in a grid matrix, each first compensation point corresponding to a first temperature compensation value; obtaining a plurality of second compensation points on the edge contour; and obtaining a second temperature compensation value corresponding to each second compensation point based on the first temperature compensation distribution map to form a second temperature compensation distribution map, wherein the temperature compensation distribution map is formed from the first temperature compensation distribution map and the second temperature compensation distribution map. The second temperature compensation distribution map can be used to perform corresponding temperature compensation on the edge region of the wafer, thereby effectively improving the uniformity of device dimensions after etching.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method and system for forming a temperature compensation distribution diagram, and a temperature compensation method. Background Art

[0002] Photolithography is a crucial technology in semiconductor manufacturing. It enables the transfer of patterns from a mask onto the surface of a silicon wafer, creating semiconductor products that meet design requirements. The photolithography process consists of an exposure step, a development step following the exposure step, and an etching step following the development step. During the exposure step, light passes through the light-transmitting areas of the mask onto a silicon wafer coated with photoresist, causing the photoresist to undergo a chemical reaction under the irradiation of light. During the development step, the different solubility of the developer in the photosensitive and unsensitive photoresists is exploited to form a photoresist pattern, enabling the transfer of the mask pattern to the photoresist. During the etching step, the silicon wafer is etched based on the photoresist pattern formed in the photoresist layer, further transferring the mask pattern to the wafer.

[0003] As fabrication precision continues to improve, the requirements for etching process uniformity are also trending. Currently, etching uniformity is improved by controlling the etching rate. There are many methods to control the etching rate, such as gas ratio, TCCT, and temperature. Among them, temperature compensation control has been proven to be more accurate and has fewer side effects.

[0004] However, there are still many problems in controlling the etching rate through temperature compensation in the prior art. Summary of the Invention

[0005] The technical problem solved by the present invention is to provide a method and system for forming a temperature compensation distribution map, and a temperature compensation method, which can effectively improve the uniformity of device size after etching.

[0006] To address the above-mentioned problems, the technical solution of the present invention provides a method for forming a temperature compensation distribution map, comprising: obtaining a wafer plane, the wafer plane including an edge contour and a temperature compensation region enclosed by the edge contour, the compensation region including a central region and an edge region surrounding the central region; measuring the characteristic dimensions of device structures located in the central region and the characteristic dimensions of device structures located in the edge region to obtain a first temperature compensation distribution map of the temperature compensation region, the first temperature compensation distribution map having a plurality of first compensation points distributed in a grid matrix, each first compensation point corresponding to a first temperature compensation value; obtaining a plurality of second compensation points on the edge contour; obtaining a second temperature compensation value corresponding to each second compensation point based on the first temperature compensation distribution map to form a second temperature compensation distribution map; performing supplementary processing on the first temperature compensation distribution map to form a third temperature compensation distribution map, the third temperature compensation distribution map having a plurality of third compensation points, each third compensation point corresponding to a third temperature compensation value; and forming the temperature compensation distribution map from the second temperature compensation distribution map and the third temperature compensation distribution map to improve the uniformity of the characteristic dimensions of the device structures located in the central region and the characteristic dimensions of the device structures located in the edge region.

[0007] Optionally, a method for obtaining the second temperature compensation value corresponding to each second compensation point according to the first temperature compensation distribution diagram: according to the first temperature compensation value corresponding to each first compensation point in the first temperature compensation distribution diagram, a first interpolation method is used to obtain the second temperature compensation value corresponding to each second compensation point.

[0008] Optionally, the method of using the first interpolation method to obtain the second temperature compensation value corresponding to each second compensation site includes: connecting the second compensation site with the center point of the wafer plane to form an auxiliary line; obtaining the first temperature compensation value corresponding to each first compensation point located in a preset area on both sides of the auxiliary line; and using the first temperature compensation value corresponding to the first compensation site located in the preset area and closest to the second compensation site as the second temperature compensation value corresponding to the second compensation site.

[0009] Optionally, a second interpolation method is used to perform supplementary processing on the first temperature compensation distribution map to form the third temperature compensation distribution map.

[0010] Optionally, the density of the third compensation sites in the third temperature compensation distribution map is greater than the density of the first compensation sites in the first temperature compensation distribution map.

[0011] Optionally, the distance between adjacent third compensation sites is 5 mm to 10 mm.

[0012] Optionally, the first temperature compensation distribution map is used for temperature compensation when etching to form fins.

[0013] Accordingly, the technical solution of the present invention also provides a system for forming a temperature compensation distribution map, including: a wafer plane acquisition module, used to acquire a wafer plane, the wafer plane including an edge contour and a temperature compensation area surrounded by the edge contour, the compensation area including a central area and an edge area surrounding the central area; a first temperature compensation distribution map acquisition module, used to measure the characteristic dimensions of the device structure located in the central area and the characteristic dimensions of the device structure located in the edge area, and obtain a first temperature compensation distribution map of the temperature compensation area, the first temperature compensation distribution map having a plurality of first compensation points distributed in a grid matrix, each of the first compensation points corresponding to a first temperature compensation value; a second compensation point acquisition module, used to obtain a first compensation point in the temperature compensation area. A plurality of second compensation sites are obtained on the edge contour; a second temperature compensation distribution map acquisition module is used to obtain the second temperature compensation value corresponding to each second compensation site according to the first temperature compensation distribution map to form a second temperature compensation distribution map; a third temperature compensation distribution map acquisition module is used to supplement the first temperature compensation distribution map to form a third temperature compensation distribution map, the third temperature compensation distribution map has a plurality of third compensation sites, each of the third compensation points corresponds to a third temperature compensation value, and the temperature compensation distribution map is formed by the second temperature compensation distribution map and the third temperature compensation distribution map to improve the characteristic size of the device structure located in the central area and the uniformity of the characteristic size of the device structure located in the edge area.

[0014] Optionally, the second temperature compensation distribution map acquisition module includes: a first interpolation calculation module, which is used to obtain the second temperature compensation value corresponding to each second compensation point in the first temperature compensation distribution map using a first interpolation method based on the first temperature compensation value corresponding to each first compensation point.

[0015] Optionally, the first interpolation calculation module includes: an auxiliary line acquisition module, used to connect the second compensation site with the center point of the wafer plane to form an auxiliary line; a preset area acquisition module, used to acquire the preset area on both sides of the auxiliary line based on the auxiliary line; a value acquisition module, used to acquire the first temperature compensation value corresponding to each of the first compensation points located in the preset area on both sides of the auxiliary line; an assignment module, used to use the first temperature compensation value corresponding to the first compensation site located in the preset area and closest to the second compensation site as the second temperature compensation value corresponding to the second compensation site.

[0016] Optionally, the third temperature compensation distribution map acquisition module includes: a second interpolation calculation module, configured to perform supplementary processing on the first temperature compensation distribution map using a second interpolation method to form the third temperature compensation distribution map.

[0017] Optionally, the density of the third compensation sites in the third temperature compensation distribution map is greater than the density of the first compensation sites in the first temperature compensation distribution map.

[0018] Optionally, the distance between adjacent third compensation sites is 5 mm to 10 mm.

[0019] Optionally, the first temperature compensation distribution map is used for temperature compensation when etching to form fins.

[0020] Correspondingly, the technical solution of the present invention also provides a temperature compensation method, including: providing a temperature compensation distribution diagram as described in any one of the above items; inputting the temperature compensation distribution diagram into a temperature control machine; and performing temperature compensation on the wafer through the temperature control machine.

[0021] Compared with the prior art, the technical solution of the present invention has the following advantages:

[0022] In the method for forming a temperature compensation profile of the technical solution of the present invention, a second temperature compensation value corresponding to each second compensation point is obtained based on the first temperature compensation profile to form a second temperature compensation profile. This second temperature compensation profile enables temperature compensation to be performed on the edge of the wafer, thereby effectively improving the uniformity of device dimensions after etching.

[0023] Furthermore, a method for obtaining a second temperature compensation value corresponding to each second compensation site using a first interpolation method includes: connecting the second compensation site with the center point of the wafer plane to form an auxiliary line; obtaining the first temperature compensation value corresponding to each first compensation site located within a preset area on both sides of the auxiliary line; and using the first temperature compensation value corresponding to the first compensation site located within the preset area and closest to the second compensation site as the second temperature compensation value corresponding to the second compensation site. According to the distribution pattern of the first temperature compensation distribution diagram, the closer the spacing between compensation sites, the closer the temperature compensation values. Therefore, by using the first temperature compensation value corresponding to the first compensation site located within the preset area and closest to the second compensation site as the second temperature compensation value corresponding to the second compensation site, the second temperature compensation value corresponding to each second compensation site is closer to the actual value, thereby improving the uniformity of device size after etching.

[0024] Furthermore, the density of the third compensation sites in the third temperature compensation distribution map is greater than the density of the first compensation sites in the first temperature compensation distribution map, thereby improving the accuracy of temperature compensation.

[0025] The temperature compensation profile forming system of the present invention includes a second temperature compensation profile acquisition module that obtains a second temperature compensation value corresponding to each second compensation point based on the first temperature compensation profile to form a second temperature compensation profile. This second temperature compensation profile enables temperature compensation to be performed on the edge of the wafer, thereby effectively improving the dimensional uniformity of the device after etching.

[0026] Furthermore, the first interpolation calculation module includes: an auxiliary line acquisition module for connecting the second compensation point with the center point of the wafer plane to form an auxiliary line; a preset area acquisition module for acquiring preset areas on both sides of the auxiliary line using the auxiliary line as a reference; a value acquisition module for acquiring first temperature compensation values corresponding to each first compensation point located within the preset area on both sides of the auxiliary line; and an assignment module for using the first temperature compensation value corresponding to the first compensation point located within the preset area and closest to the second compensation point as the second temperature compensation value corresponding to the second compensation point. According to the distribution pattern of the first temperature compensation distribution diagram, the closer the spacing between compensation points, the closer the temperature compensation values. Therefore, by using the first temperature compensation value corresponding to the first compensation point located within the preset area and closest to the second compensation point as the second temperature compensation value corresponding to the second compensation point, the second temperature compensation values corresponding to each second compensation point are closer to the actual values, thereby improving the uniformity of device dimensions after etching.

[0027] Furthermore, the density of the third compensation sites in the third temperature compensation distribution map is greater than the density of the first compensation sites in the first temperature compensation distribution map, thereby improving the accuracy of temperature compensation. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a temperature compensation distribution diagram;

[0029] Figure 2 is a schematic flow chart of a method for forming a temperature compensation distribution map in an embodiment of the present invention;

[0030] Figures 3 to 7 1 is a schematic structural diagram of each step in a method for forming a temperature compensation distribution diagram in an embodiment of the present invention;

[0031] Figure 8 2 is a schematic structural diagram of a system for forming a temperature compensation distribution diagram in an embodiment of the present invention. DETAILED DESCRIPTION

[0032] As described in the background art, there are still many problems in controlling the etching rate through temperature compensation in the prior art, which will be described in detail below.

[0033] Please refer to Figure 1 In the prior art, temperature compensation for etching rate control typically utilizes a Hydra system. Compensation points 100 in the temperature compensation distribution diagram of the Hydra system are distributed in a grid matrix, and each compensation point 100 corresponds to a temperature compensation value. Because the surface of wafer 101 is circular, when the temperature compensation distribution diagram is applied to wafer 101, compensation points 100 in the temperature compensation distribution diagram may exist at the edge region 102 of wafer 101. Consequently, during actual operation, temperature compensation may not be achieved at the edge region 102 of the wafer, affecting the uniformity of device dimensions after etching.

[0034] Based on this, the present invention provides a method and system for forming a temperature compensation profile, as well as a temperature compensation method. Based on the first temperature compensation profile, a second temperature compensation value corresponding to each second compensation point is obtained to form a second temperature compensation profile. This second temperature compensation profile enables temperature compensation to be performed on the edge of the wafer, effectively improving the uniformity of device dimensions after etching.

[0035] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0036] Figure 2 1 is a flow chart of a method for forming a temperature compensation profile in an embodiment of the present invention, comprising:

[0037] Step S101, obtaining a wafer plane, wherein the wafer plane includes an edge contour and a temperature compensation region surrounded by the edge contour, wherein the compensation region includes a central region and an edge region surrounding the central region;

[0038] Step S102, measuring the characteristic dimensions of the device structure located in the central area and the characteristic dimensions of the device structure located in the edge area to obtain a first temperature compensation distribution map of the temperature compensation area, wherein the first temperature compensation distribution map has a plurality of first compensation points distributed in a grid matrix, each of the first compensation points corresponding to a first temperature compensation value;

[0039] Step S103, obtaining a plurality of second compensation points on the edge contour;

[0040] Step S104, obtaining a second temperature compensation value corresponding to each second compensation point according to the first temperature compensation distribution map, to form a second temperature compensation distribution map;

[0041] Step S105, performing supplementary processing on the first temperature compensation distribution map to form a third temperature compensation distribution map, wherein the third temperature compensation distribution map has a plurality of third compensation points, each of which corresponds to a third temperature compensation value;

[0042] Step S106 , forming the temperature compensation distribution map by using the second temperature compensation distribution map and the third temperature compensation distribution map to improve the uniformity of the characteristic size of the device structure located in the central area and the characteristic size of the device structure located in the edge area.

[0043] The steps of the optical proximity correction method are described in detail below with reference to the accompanying drawings.

[0044] Figures 3 to 7 1 is a schematic structural diagram of each step in the method for forming a temperature compensation distribution diagram in an embodiment of the present invention.

[0045] Please refer to Figure 3 , obtaining a wafer plane 200 , wherein the wafer plane 200 includes an edge contour 201 and a temperature compensation region 202 surrounded by the edge contour 201 .

[0046] In this embodiment, the compensation area 202 includes a central area and a peripheral area (not labeled) surrounding the central area (not labeled).

[0047] It should be noted that, in this embodiment, the wafer plane 200 is obtained according to the wafer in the actual process, and the size of the wafer plane 200 is the same as the size of the wafer in the actual process.

[0048] Please refer to Figure 4 , the characteristic dimensions of the device structure located in the central area and the characteristic dimensions of the device structure located in the edge area are measured to obtain a first temperature compensation distribution diagram of the temperature compensation area 202, wherein the first temperature compensation distribution diagram has a plurality of first compensation points 203 distributed in a grid matrix, and each first compensation point 203 corresponds to a first temperature compensation value.

[0049] In this embodiment, the first temperature compensation distribution diagram is a temperature compensation distribution diagram in a Hydra system.

[0050] It should be noted that the process for obtaining the temperature compensation distribution map in the Hydra system is as follows: when a wafer is undergoing a device structure manufacturing process, etching is performed for a period of time before stopping. The device structure dimensions at each measurement location are then measured using a measurement machine. Furthermore, the size difference between the device structure dimensions at each measurement location and the preset device structure dimensions is determined. Based on the size difference at each measurement location, a first temperature compensation value corresponding to the corresponding first compensation point is obtained, thereby forming the temperature compensation distribution map in the Hydra system. A larger size difference corresponds to a larger first temperature compensation value at the first compensation location 203. Furthermore, each first compensation location 203 in the temperature compensation distribution map in the Hydra system corresponds one-to-one to each measurement location.

[0051] In this embodiment, the first temperature compensation profile is used for temperature compensation when etching to form fins.

[0052] Please refer to Figure 5 , obtaining a plurality of second compensation points 204 on the edge contour 201 .

[0053] In this embodiment, the number of the second compensation points 204 on the edge contour 201 is obtained through external input.

[0054] In other embodiments, the number of the second compensation points on the edge contour may also be obtained through internal setting.

[0055] Please refer to Figure 6 According to the first temperature compensation distribution map, a second temperature compensation value corresponding to each second compensation point 204 is obtained to form a second temperature compensation distribution map.

[0056] In this embodiment, according to the first temperature compensation distribution diagram, a method for obtaining the second temperature compensation value corresponding to each second compensation point 204 is as follows: according to the first temperature compensation value corresponding to each first compensation point 203 in the first temperature compensation distribution diagram, a first interpolation method is used to obtain the second temperature compensation value corresponding to each second compensation point 204.

[0057] In this embodiment, the method of using the first interpolation method to obtain the second temperature compensation value corresponding to each second compensation site 204 includes: connecting the second compensation site 204 and the center point O of the wafer plane to form an auxiliary line 205; obtaining the first temperature compensation value corresponding to each first compensation point 203 located in the preset area S on both sides of the auxiliary line 205; and using the first temperature compensation value corresponding to the first compensation site 203 located in the preset area S and closest to the second compensation site 204 as the second temperature compensation value corresponding to the second compensation site 204.

[0058] In this embodiment, the distribution pattern of the first temperature compensation profile indicates that the temperature compensation values between compensation sites with smaller spacing are closer. Therefore, by using the first temperature compensation value corresponding to the first compensation site 203 located within the predetermined region S and closest to the second compensation site 204 as the second temperature compensation value corresponding to the second compensation site 204, the second temperature compensation value corresponding to each second compensation site 204 is closer to the actual value, thereby improving the uniformity of device dimensions after etching.

[0059] Please refer to Figure 7 , the first temperature compensation distribution diagram is supplemented to form a third temperature compensation distribution diagram, wherein the third temperature compensation distribution diagram has a plurality of third compensation points 206, each of which corresponds to a third temperature compensation value.

[0060] In this embodiment, a second interpolation method is used to perform supplementary processing on the first temperature compensation distribution map to form the third temperature compensation distribution map.

[0061] In this embodiment, the density of the third compensation sites 206 in the third temperature compensation distribution map is greater than the density of the first compensation sites 203 in the first temperature compensation distribution map, thereby improving the accuracy of temperature compensation.

[0062] In this embodiment, the distance between adjacent third compensation points 206 is 5 mm to 10 mm.

[0063] In this embodiment, the second temperature compensation distribution map can be used to perform corresponding temperature compensation on the edge area of the wafer, thereby effectively improving the uniformity of the device size after etching.

[0064] Please continue to refer to Figure 7 The temperature compensation distribution map 300 is formed by the first temperature compensation distribution map and the second temperature compensation distribution map to improve the uniformity of the characteristic size of the device structure located in the central area and the characteristic size of the device structure located in the edge area.

[0065] Figure 8 2 is a schematic structural diagram of a system for forming a temperature compensation distribution diagram in an embodiment of the present invention.

[0066] Accordingly, an embodiment of the present invention further provides a system for forming a temperature compensation distribution diagram, please refer to Figure 8, comprising: a wafer plane acquisition module 10, for acquiring a wafer plane 200, wherein the wafer plane 200 includes an edge contour 201 and a temperature compensation area 202 surrounded by the edge contour 201, wherein the compensation area includes a central area and an edge area surrounding the central area; a first temperature compensation distribution map acquisition module 11, for measuring the characteristic dimensions of the device structure located in the central area and the characteristic dimensions of the device structure located in the edge area, and acquiring a first temperature compensation distribution map of the temperature compensation area 202, wherein the first temperature compensation distribution map has a plurality of first compensation points 203 distributed in a grid matrix, and each first compensation point 203 corresponds to a first temperature compensation value; a second compensation site acquisition module 12, for acquiring a plurality of second compensation sites 204 on the edge contour 201; the second temperature compensation sites 205 are respectively The compensation distribution map acquisition module 13 is used to obtain the second temperature compensation value corresponding to each second compensation site 204 according to the first temperature compensation distribution map to form a second temperature compensation distribution map; the third temperature compensation distribution map acquisition module 14 is used to supplement the first temperature compensation distribution map to form a third temperature compensation distribution map, wherein the third temperature compensation distribution map has a plurality of third compensation sites 206, each of the third compensation sites 206 corresponds to a third temperature compensation value, and the plurality of third compensation sites 206 and the plurality of second compensation sites 204 are divergently distributed, and the temperature compensation distribution map 300 is formed by the first temperature compensation distribution map and the second temperature compensation distribution map to improve the uniformity of the characteristic dimensions of the device structure located in the central area and the characteristic dimensions of the device structure located in the edge area.

[0067] In this embodiment, the second temperature compensation distribution map can be used to perform corresponding temperature compensation on the edge area of the wafer, thereby effectively improving the uniformity of the device size after etching.

[0068] In this embodiment, the first temperature compensation distribution diagram is a temperature compensation distribution diagram in a Hydra system.

[0069] In this embodiment, the second temperature compensation distribution map acquisition module 13 includes: a first interpolation calculation module 131, which is used to obtain the second temperature compensation value corresponding to each second compensation point 204 using a first interpolation method based on the first temperature compensation value corresponding to each first compensation point 203 in the first temperature compensation distribution map.

[0070] In this embodiment, the first interpolation calculation module 131 includes: an auxiliary line acquisition module 1311, used to connect the second compensation site 204 and the center point O of the wafer plane 200 to form an auxiliary line 205; a preset area acquisition module 1312, used to obtain the preset area S on both sides of the auxiliary line 205 based on the auxiliary line 205; a value acquisition module 1313, used to obtain the first temperature compensation value corresponding to each first compensation point 203 located in the preset area S on both sides of the auxiliary line 205; an assignment module 1314, used to use the first temperature compensation value corresponding to the first compensation site 201 located in the preset area S and closest to the second compensation site 204 as the second temperature compensation value corresponding to the second compensation site 204.

[0071] In this embodiment, the distribution pattern of the first temperature compensation profile indicates that the temperature compensation values between compensation sites with smaller spacing are closer. Therefore, by using the first temperature compensation value corresponding to the first compensation site 203 located within the predetermined region S and closest to the second compensation site 204 as the second temperature compensation value corresponding to the second compensation site 204, the second temperature compensation value corresponding to each second compensation site 204 is closer to the actual value, thereby improving the uniformity of device dimensions after etching.

[0072] In this embodiment, the third temperature compensation distribution map acquisition module 14 includes: a second interpolation calculation module 141, which is used to use a second interpolation method to perform supplementary processing on the first temperature compensation distribution map to form the third temperature compensation distribution map.

[0073] In this embodiment, the density of the third compensation sites 206 in the third temperature compensation distribution map is greater than the density of the first compensation sites 203 in the first temperature compensation distribution map, thereby improving the accuracy of temperature compensation.

[0074] In this embodiment, the distance between adjacent third compensation points 206 is 5 mm to 10 mm.

[0075] In this embodiment, the first temperature compensation profile is used for temperature compensation when etching to form fins.

[0076] Accordingly, an embodiment of the present invention further provides a temperature compensation method, comprising: providing a temperature compensation distribution diagram as described above; inputting the temperature compensation distribution diagram into a temperature control machine; and performing temperature compensation on a wafer through the temperature control machine.

[0077] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the scope defined by the claims.

Claims

1. A method for forming a temperature compensation distribution map, characterized in that: include: Acquire a wafer plane, the wafer plane including an edge contour and a temperature compensation region surrounded by the edge contour, the compensation region including a central region and an edge region surrounding the central region; Measuring characteristic dimensions of the device structure located in the central region and characteristic dimensions of the device structure located in the edge region to obtain a first temperature compensation distribution map of the temperature compensation region, wherein the first temperature compensation distribution map has a plurality of first compensation points distributed in a grid matrix, each first compensation point corresponding to a first temperature compensation value; Acquiring a plurality of second compensation points on the edge contour; According to the first temperature compensation distribution map, obtaining a second temperature compensation value corresponding to each second compensation point to form a second temperature compensation distribution map; Performing supplementary processing on the first temperature compensation distribution map to form a third temperature compensation distribution map, wherein the third temperature compensation distribution map has a plurality of third compensation points, each of the third compensation points corresponding to a third temperature compensation value; The temperature compensation distribution map is formed by the second temperature compensation distribution map and the third temperature compensation distribution map to improve the uniformity of the characteristic size of the device structure located in the central area and the characteristic size of the device structure located in the edge area.

2. The method for forming a temperature compensation profile according to claim 1, wherein: A method for obtaining the second temperature compensation value corresponding to each second compensation point according to the first temperature compensation distribution diagram: according to the first temperature compensation value corresponding to each first compensation point in the first temperature compensation distribution diagram, a first interpolation method is used to obtain the second temperature compensation value corresponding to each second compensation point.

3. The method for forming a temperature compensation profile according to claim 2, wherein: The method of using the first interpolation method to obtain the second temperature compensation value corresponding to each second compensation site includes: connecting the second compensation site and the center point of the wafer plane to form an auxiliary line; obtaining the first temperature compensation value corresponding to each first compensation point located in a preset area on both sides of the auxiliary line; and using the first temperature compensation value corresponding to the first compensation site located in the preset area and closest to the second compensation site as the second temperature compensation value corresponding to the second compensation site.

4. The method for forming a temperature compensation profile according to claim 1, wherein: The first temperature compensation distribution map is supplemented by using a second interpolation method to form the third temperature compensation distribution map.

5. The method for forming a temperature compensation profile according to claim 1, wherein: The density of third compensation sites in the third temperature compensation distribution map is greater than the density of first compensation sites in the first temperature compensation distribution map.

6. The method for forming a temperature compensation profile according to claim 1, wherein: The distance between adjacent third compensation points is 5 mm to 10 mm.

7. The method for forming a temperature compensation profile according to claim 1, wherein: The first temperature compensation distribution map is used for temperature compensation when etching to form fins.

8. A system for forming a temperature compensation profile, characterized in that: include: A wafer plane acquisition module is used to acquire a wafer plane, wherein the wafer plane includes an edge contour and a temperature compensation area surrounded by the edge contour, wherein the compensation area includes a central area and an edge area surrounding the central area; a first temperature compensation distribution map acquisition module, configured to measure characteristic dimensions of the device structure located in the central region and characteristic dimensions of the device structure located in the edge region, and acquire a first temperature compensation distribution map of the temperature compensation region, wherein the first temperature compensation distribution map has a plurality of first compensation points distributed in a grid matrix, each of the first compensation points corresponding to a first temperature compensation value; A second compensation site acquisition module, configured to acquire a plurality of second compensation sites on the edge contour; a second temperature compensation distribution map acquisition module, configured to acquire a second temperature compensation value corresponding to each second compensation point according to the first temperature compensation distribution map, to form a second temperature compensation distribution map; A third temperature compensation distribution map acquisition module is used to supplement the first temperature compensation distribution map to form a third temperature compensation distribution map. The third temperature compensation distribution map has a plurality of third compensation points, each of which corresponds to a third temperature compensation value. The temperature compensation distribution map is formed by the second temperature compensation distribution map and the third temperature compensation distribution map to improve the uniformity of the characteristic dimensions of the device structure located in the central area and the characteristic dimensions of the device structure located in the edge area.

9. The system for forming a temperature compensation profile according to claim 8, wherein: The second temperature compensation distribution map acquisition module includes: a first interpolation calculation module, which is used to obtain the second temperature compensation value corresponding to each second compensation point in the first temperature compensation distribution map using a first interpolation method based on the first temperature compensation value corresponding to each first compensation point.

10. The system for forming a temperature compensation profile according to claim 9, wherein: The first interpolation calculation module includes: an auxiliary line acquisition module, used to connect the second compensation site and the center point of the wafer plane to form an auxiliary line; a preset area acquisition module, used to acquire the preset area on both sides of the auxiliary line based on the auxiliary line; a value acquisition module, used to acquire the first temperature compensation value corresponding to each of the first compensation points located in the preset area on both sides of the auxiliary line; an assignment module, used to use the first temperature compensation value corresponding to the first compensation site located in the preset area and closest to the second compensation site as the second temperature compensation value corresponding to the second compensation site.

11. The system for forming a temperature compensation profile according to claim 8, wherein: The third temperature compensation distribution map acquisition module includes: a second interpolation calculation module, which is used to use a second interpolation method to perform supplementary processing on the first temperature compensation distribution map to form the above-mentioned third temperature compensation distribution map.

12. The system for forming a temperature compensation profile according to claim 8, wherein: The density of third compensation sites in the third temperature compensation distribution map is greater than the density of first compensation sites in the first temperature compensation distribution map.

13. The system for forming a temperature compensation profile according to claim 8, wherein: The distance between adjacent third compensation points is 5 mm to 10 mm.

14. The system for forming a temperature compensation profile according to claim 8, wherein: The first temperature compensation distribution map is used for temperature compensation when etching to form fins.

15. A temperature compensation method, characterized in that: include: Providing a temperature compensation profile according to any one of claims 1 to 7; Inputting the temperature compensation distribution map into a temperature control machine; The temperature of the wafer is compensated by the temperature control machine.

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