Method for detecting electron point defects in a solid material, detection device and system

Abstract

A method, device and system for detecting electronic point defects in a solid material, the method comprising: obtaining spectral information corresponding to each probe point defect based on fluorescence; obtaining a local electric field signal of the probe point defect based on the spectral information corresponding to the probe point defect; obtaining a jump signal of the probe point defect based on the local electric field signal of the probe point defect before and after the jump; after multiple charge state jumps occur, combining jump signals of all probe point defects into a multi-dimensional space; performing first classification on the jump signals in the multi-dimensional space; obtaining electric field information of each electronic point defect at each corresponding probe point defect based on each type of jump signal in the first classification; obtaining relative positions of the probe point defects; and obtaining relative positions of the electronic point defect and the corresponding multiple probe point defects based on the electric field information of each electronic point defect at the corresponding multiple probe point defects and the relative positions of the multiple probe point defects corresponding to the electronic point defect.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of quantum technology, in particular to a method for detecting electronic point defects in a solid material, a detection device and a system. BACKGROUND

[0002] In the development of various modern science and technology, electronic point defects in crystals are more attractive than perfect crystals, and the study of electronic point defects has profoundly influenced the fields of material mechanical engineering, optical fibers, solar cells and semiconductor technology. In emerging quantum information technology, some electronic point defects have become the basic building blocks of quantum computing quantum networks and quantum sensing. Related optical methods are very suitable for detecting fluorescent defects, but since most electronic point defects do not have sufficient fluorescence intensity or stability, it is very difficult to detect and study electronic point defects alone. SUMMARY

[0003] In view of the above problems, the present application provides a method for detecting electronic point defects in a solid material, a detection device and a system, so as to facilitate the detection of electronic point defects in a bulk material.

[0004] As a first aspect of the present application, a method for detecting electronic point defects in a solid material is provided, comprising:

[0005] In response to the probe point defects in the to-be-detected solid sample emitting fluorescence, acquiring spectral information corresponding to each probe point defect according to the fluorescence, and obtaining a local electric field signal of the probe point defect according to the spectral information corresponding to the probe point defect;

[0006] At the same time that the charge state of each electronic point defect in the to-be-detected sample jumps, the local electric field signals of multiple probe point defects in the to-be-detected sample jump, i.e. the local electric field signals of multiple probe point defects jump in association with the electronic point defects, and the jump signals of the probe point defects are obtained according to the local electric field signals of the probe point defects before and after the jump;

[0007] After multiple charge state jumps occur, the jump signals of all probe point defects are combined into a first multi-dimensional space, and the multiple jump signals of the associated jumps caused by the same electronic point defect have the same position in the multi-dimensional space;

[0008] The jump signals in the multi-dimensional space are first classified, wherein each class of jump signals in the first classification corresponds to a charge state jump of the same electronic point defect;

[0009] According to each class of jump signal in the first classification, the electric field information of each electronic point defect at each corresponding probe point defect is obtained;

[0010] The relative positions of the probe point defects are acquired;

[0011] According to the electric field information of each electron point defect at corresponding multiple probe point defects and the relative positions of the multiple probe point defects corresponding to the electron point defect, the relative positions of the electron point defect and the multiple probe point defects corresponding to the electron point defect are obtained, and the detection of the electron point defect is completed.

[0012] According to an embodiment of the present application, according to each type of jump signal in the first classification, the electric field information of each electron point defect at each corresponding probe point defect is obtained, including:

[0013] For each type in the first classification, the multiple jump signals of each probe point defect are averaged to obtain the electric field information at each probe point defect.

[0014] According to an embodiment of the present application, the charge state of the probe point defect jumps multiple times, and the jump of the charge state of the probe point defect causes the jump signal of other probe point defects.

[0015] The positions of all probe point defects include:

[0016] The jump signal groups in which the charge state of the probe point defect jumps are combined into a second multi-dimensional space;

[0017] The jump signals in the second multi-dimensional space are classified into a second classification, wherein each type in the second classification corresponds to the jump of the charge state of the same probe point defect.

[0018] According to each type of jump signal in the second classification, the electric field information of each probe point defect at each corresponding other probe point defect is obtained.

[0019] According to the electric field information of each probe point defect at each corresponding other probe point defect, the relative positions of the probe point defects are obtained.

[0020] According to an embodiment of the present application, the generation mode of the probe point defect in the sample to be measured includes:

[0021] The sample to be measured is spontaneously generated or the sample to be measured is subjected to direct writing of excitation light, electron irradiation or high-temperature annealing.

[0022] According to an embodiment of the present application, the change of the charge state of the electron point defect comes from a spontaneous process, light excitation or electric excitation.

[0023] According to an embodiment of the present application, the sample to be measured is a semiconductor, and the semiconductor includes silicon, silicon carbide or diamond.

[0024] According to an embodiment of the present application, the first classification of the jump signals in the multi-dimensional space includes using a clustering analysis algorithm to classify the jump signals in the multi-dimensional space.

[0025] According to the embodiment of the present application, the jump signal of the probe point defect is obtained according to the local electric field signals of the probe point defect before and after the jump, and the jump signal of the probe point defect comprises:

[0026] The jump signal of the probe point defect is obtained by subtracting the local electric field signals of the probe point defect before and after the jump.

[0027] As a second aspect of the present application, a detection device for detecting electronic point defects in a solid material is also provided, which is used to perform the detection method described above, and the detection device comprises:

[0028] The first acquisition module is adapted to acquire the spectral information corresponding to each probe point defect according to the fluorescence emitted by the probe point defect in the sample to be detected, and obtain the local electric field signal of the probe point defect according to the spectral information corresponding to the probe point defect;

[0029] The first obtaining module is adapted to obtain the jump signal of the probe point defect according to the local electric field signals of the probe point defect before and after the jump, that is, the correlation jump of the plurality of probe point defects corresponding to the electronic point defect, when the charge state of each electronic point defect in the sample to be detected jumps;

[0030] The combination module is adapted to combine the jump signals of all the probe point defects into a multi-dimensional space after a plurality of charge state jumps, and the plurality of jump signals of the correlation jump caused by the electronic point defect have the same position in the multi-dimensional space.

[0031] The first classification module is adapted to perform first classification on the jump signals in the multi-dimensional space, wherein each type of jump signal in the first classification corresponds to the charge state jump of the same electronic point defect.

[0032] The second obtaining module is adapted to obtain the electric field information of each electronic point defect at each corresponding probe point defect according to each type of jump signal in the first classification.

[0033] The second acquisition module is adapted to acquire the relative positions of the probe point defects.

[0034] The third obtaining module is adapted to obtain the relative positions of the electronic point defect and the corresponding plurality of probe point defects according to the electric field information of each electronic point defect at the corresponding plurality of probe point defects and the relative positions of the plurality of probe point defects corresponding to the electronic point defect, and complete the detection of the electronic point defect.

[0035] As a third aspect of the present application, a detection system for detecting electronic point defects in a solid material is also provided, which comprises:

[0036] The excitation light module is adapted to emit excitation light to make the probe point defect in the sample to be detected emit fluorescence.

[0037] a microscope objective suitable for collecting fluorescence;

[0038] a fluorescence collection module suitable for collecting fluorescence collected by the microscope objective;

[0039] a computer suitable for executing the above detection method.

[0040] According to the embodiment of the present application, by classifying the multi-dimensional space composed of the jump signals of all probe point defects, since each class corresponds to an electron point defect, the electric field information of the electron point defect corresponding to each class at different probe point defects is obtained according to the jump signal of each class, the relative position of the electron point defect is obtained by using the electric field information of the electron point defect at different probe point defects and the relative positions of different probe point defects, and the detection of a single electron point defect in a bulk material is realized.

[0041] According to the detection method provided by the embodiment of the present application, the detection limit of the concentration of the to-be-detected point defects can be less than 0.01 ppb, and the ultra-low concentration to-be-detected point defects in a solid bulk material with ultra-high purity and ultra-high quality can be detected. BRIEF DESCRIPTION OF DRAWINGS

[0042] Figure 1 A flow chart of a detection method of an electron point defect in a solid material according to an embodiment of the present application is shown;

[0043] Figure 2 A structural block diagram of a detection device of an electron point defect in a solid material according to an embodiment of the present application is shown;

[0044] Figure 3 A structural block diagram of a detection system of an electron point defect in a solid material according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0045] In the process of realizing the present application, it is found that the related methods for detecting electronic point defects mainly include: (1) using transmission electron microscopy (TEM) detection, which uses an electron beam to pass through a sample and interact with sample atoms, and can image point defects in thin film samples and nanoparticles, thus not applicable to bulk material samples; (2) using scanning probe microscopy (SPM) detection, which uses near-field interaction between a probe tip and a sample surface to provide atomic-level resolution surface point defect images, also not applicable to detecting point defects inside bulk material samples; (3) using X-ray diffraction (XRD) detection, which can detect the internal structure of a bulk material, but cannot distinguish individual point defects; (4) using secondary ion mass spectrometry (SIMS) detection, which can detect ppb level of foreign atoms, but cannot distinguish individual electronic point defects, cannot reflect the spatial distribution information of point defects in the plane, and is destructive to the sample. Therefore, the existing methods are not suitable for three-dimensional imaging of electronic point defects in bulk materials.

[0046] To make the objectives, technical solutions, and advantages of the present application clearer, further detailed descriptions of the present application are made below in combination with specific embodiments and with reference to the accompanying drawings.

[0047] Figure 1 A flowchart of a method for detecting electronic point defects in a solid material according to an embodiment of the present application is shown.

[0048] In combination with Figure 1 , the detection method includes operations S110-S170.

[0049] In operation S110, in response to a probe point defect in a solid sample emitting fluorescence, spectral information corresponding to each probe point defect is obtained according to the fluorescence, and a local electric field signal of the probe point defect is obtained according to the spectral information corresponding to the probe point defect.

[0050] In operation S120, while the charge state of each electronic point defect in the sample under test jumps, the local electric field signals of multiple probe point defects in the sample under test jump, i.e., the local electric field signals of multiple probe point defects undergo correlated jumps corresponding to the electronic point defects, and a jump signal of the probe point defect is obtained according to the local electric field signals of the probe point defect before and after the jump.

[0051] In operation S130, after multiple charge state jumps occur, the jump signals of all probe point defects are combined into a multi-dimensional space, and multiple jump signals of correlated jumps caused by the same electronic point defect have the same position in the multi-dimensional space.

[0052] In operation S140, the jump signals in the multi-dimensional space are first classified, wherein each class of jump signals in the first classification corresponds to a charge state jump of the same electronic point defect.

[0053] In operation S150, according to each class of the jump signals in the first classification, the electric field information of each electronic point defect at each corresponding probe point defect is obtained.

[0054] In operation S160, the relative positions of the probe point defects are obtained.

[0055] In operation S170, according to the electric field information of each electronic point defect at each corresponding probe point defect and the relative positions of the probe point defects corresponding to the electronic point defect, the relative positions of the electronic point defect and the corresponding probe point defects are obtained, and the detection of the electronic point defect is completed.

[0056] According to the embodiment of the present application, by classifying the multi-dimensional space composed of the jump signals of all probe point defects, since each class of the jump signals in the first classification corresponds to an electronic point defect, the electric field information of each electronic point defect at each corresponding different probe point defect is obtained according to each class of the jump signals, and the relative positions of the electronic point defects are obtained by using the electric field information of the electronic point defects at different probe point defects and the relative positions of the different probe point defects, thereby realizing the detection of a single electronic point defect in a bulk material.

[0057] According to the embodiment of the present application, the probe point defects in the solid sample to be detected emit fluorescence, and the spectral information (including excitation spectrum, fluorescence spectrum and optical detection magnetic resonance spectrum) corresponding to each probe point defect is obtained by detecting the fluorescence, and the local electric field signal of the probe point defect is obtained according to the spectral information corresponding to the probe point defect. Since the fluorescence can penetrate the sample, the method of the embodiment of the present application can detect the probe point defects (fluorescent defects) inside the sample, and detect the electronic point defects near the probe point defects based on the probe point defects, thereby realizing the detection of the electronic point defects in the bulk of the sample to be detected, and achieving the resolution capability of resolving a single electronic point defect.

[0058] According to the embodiment of the present application, there are two types of point defects in the solid material: one type is a fluorescent point defect sensitive to an electric field, and the energy level structure of the fluorescent point defect is affected by the surrounding local electric field environment, and the energy level structure of the fluorescent point defect can be detected by spectral information, and then the local electric field environment information is obtained, and this type of point defect is referred to as a “probe point defect” in the present application; the other type is an electronic point defect without fluorescent signal or with too weak fluorescent signal, which cannot be effectively detected by the existing method, but the electronic point defect has different charge states and can spontaneously or artificially control the charge state transition, and this type of point defect is referred to as an “electronic point defect” in the present application, and in the embodiment of the present application, the fluorescent point defect is used as a probe point defect, the electric field fluctuation signal caused by the charge fluctuation of the electronic point defect is detected, and the electronic point defect is distinguished and positioned by using the correlation measurement method.

[0059] According to an embodiment of the present application, the sample to be measured can be a semiconductor, and the material of the semiconductor can include silicon, silicon carbide, diamond, etc.

[0060] According to an embodiment of the present application, when the excitation light is irradiated onto the sample to be measured in operation S110, the probe point defects in the sample to be measured can be excited to emit fluorescence. The probe point defects are generally at least two, but the probe point defects are close to each other, usually within the diffraction limit, so that the fluorescence generated by each probe point defect cannot be distinguished in space. Therefore, the spectral information corresponding to each probe point defect in the sample to be measured needs to be obtained respectively.

[0061] According to an embodiment of the present application, after the fluorescence is excited in the sample to be measured, the fluorescence corresponding to each probe point defect in the sample to be measured can be obtained by using optical methods such as confocal microscopy, wide-field imaging microscopy, and super-resolution microscopic imaging, and then the spectral information corresponding to each probe point defect can be obtained.

[0062] According to an embodiment of the present application, the spectral information corresponding to each probe point defect can also be obtained by using spectral or optical detection magnetic resonance spectroscopy. According to an embodiment of the present application, the probe point defects in the sample to be measured have respective atomic structures, and the spatial positions of the probe point defects and the electronic point defects are determined by the arrangement of atoms. Because the atoms at the same position cannot be in two different arrangements at the same time, the probe point defects and the electronic point defects in the sample to be measured cannot appear at the same spatial position.

[0063] According to an embodiment of the present application, the local electric field signal of the probe point defect can change the energy level of the probe point defect. In the case where the energy level of the probe point defect changes, the probe point defect can be selectively measured by using spectral or optical detection magnetic resonance spectroscopy, and then the local electric field signal of the probe point defect can be read out. The source of the local electric field signal of each probe point defect includes a bias electric field applied by a person, a self-built electric field and a stress field in the material, and an electric field generated by the charge of other electronic point defects at the probe point defect. The response of the spectral information of the probe point defect to the local electric field depends on the properties of the probe point defect, including but not limited to the response to the size of the local electric field or the one-dimensional, two-dimensional, or three-dimensional components of the electric field. The spectral information detection of different probe point defects can be performed alternately or simultaneously. The measurement of the spectral information needs to reach a certain sensitivity, and the local electric field signal with sufficient signal-to-noise ratio is obtained before the charge state of the probe point defect changes, so that the change of the local electric field signal of multiple probe points caused by the charge change of a single electronic point defect can be distinguished.

[0064] According to an embodiment of the present application, the probe point defects can be already present in the material or can be generated by direct writing of excitation light, electron irradiation and high temperature annealing, etc. The probability of change of the charge state of the electronic point defects needs to be low enough so that most of the time only one electronic point defect changes its charge state. Different methods can be used to reduce the probability of change of the charge state of the electronic point defects in different systems, including but not limited to reducing the temperature of the sample to be tested and reducing the power of the excitation light, etc.

[0065] According to an embodiment of the present application, in operation S120, the jump signal of the probe point defects is obtained according to the local electric field signals of the probe point defects before and after the jump, including: subtracting the local electric field signals of the probe point defects before and after the jump to obtain the jump signal of the probe point defects.

[0066] According to an embodiment of the present application, in operation S130, when multiple jumps occur, the electric field jump signals of all the probe defects are combined to form a multi-dimensional space. If the electric field generated by an electronic point defect can be detected by multiple probe point defects in the vicinity, when the electronic point defect changes its charge state, the local electric field signals at the multiple probe point defects capable of detecting the electric field generated by the electronic point defect will simultaneously jump, i.e. the associated jump of the electronic point defect. The jump signals of multiple associated jumps caused by the jump of the same electronic point defect are the same, i.e. the jump signals of multiple associated jumps caused by the same electronic point defect have the same position in the multi-dimensional space. The jump signals of associated jumps caused by different electronic point defects are different, i.e. the jump signals of associated jumps caused by different electronic point defects are at different positions in the multi-dimensional space.

[0067] In operation S140, the first classification of the jump signals in the multi-dimensional space includes using a clustering analysis algorithm to perform the first classification of the jump signals in the multi-dimensional space, and each class corresponds to a charge state jump of an electronic point defect.

[0068] In operation S150, the electric field information of each electronic point defect at each corresponding probe point defect is obtained according to the jump signals in each class of the first classification, including: for each class in the first classification, averaging multiple jump signals of each probe point defect to obtain the electric field information at each probe point defect. Averaging multiple jump signals of each probe point defect can obtain the change of the local electric field at the corresponding probe point defect caused by the charge state jump of each electronic point defect, i.e. the electric field information of each electronic point defect at each corresponding probe point defect is obtained.

[0069] According to an embodiment of the present application, the charge state of the electron point defect jumps multiple times in the time period during which the charge state of the electron point defect jumps multiple times, and the jump signal in the multi-dimensional space includes a jump signal of another electron point defect caused by the jump of the charge state of the electron point defect;

[0070] The operation S160 of acquiring the positions of all probe point defects can include operations S161-S164.

[0071] In operation S161, jump signals caused by jumps of the charge state of the electron point defect are combined into a second multi-dimensional space.

[0072] In operation S162, the jump signals in the second multi-dimensional space are second classified, wherein each class in the second classification corresponds to a jump of the charge state of the same probe point defect;

[0073] In operation S163, the electric field information of each probe point defect at each corresponding other probe point defect is obtained according to the jump signals in each class in the second classification;

[0074] In operation S164, the relative positions of the probe point defects are obtained according to the electric field information of each probe point defect at each corresponding other probe point defect.

[0075] According to an embodiment of the present application, in operation S160, the positions of all probe point defects can also be obtained by using a super-resolution microscopic imaging method.

[0076] According to an embodiment of the present application, the probe point defect can be a diamond NV color center. The following diamond NV color center (NV color center) is used as a probe point defect to describe the detection method provided by the present application in detail.

[0077] Operation A: The focused spot of femtosecond light can efficiently form an NV color center in a writing point of the sample to be measured. When controlling the dose in each writing point, the number of NV color centers in each point should be greater than or equal to three according to the characteristics of the sample to be measured and the requirements of the NV color center array. The writing point is imaged by a confocal microscope, and combined with a super-resolution microscopic imaging technology, an optical detection magnetic resonance technology, and a resonance excitation spectrum measurement technology to determine the number and position of NV color centers in each point, and to screen the points suitable for being used as probe point defects.

[0078] Operation B: Based on the response of the excited state energy level of the NV color center to the transverse electric field and the longitudinal electric field, the local electric field signal of each NV color center can be obtained by using a resonance excitation spectrum measurement technology. The NV color center responds to the electric field parallel to the axis direction of the NV color center (NV axis direction) and the electric field perpendicular to the NV axis direction, which correspond to the excited state energy levels E x and E yThe shift and splitting of the peaks, so each NV center can be as a two-dimensional probe point defect. Scanning the wavelength of the excitation light, each NV center E x and E y The peak resonance excitation spectrum, fitting the peak position can get each NV center at the local electric field in the direction parallel to the NV axis and perpendicular to the NV axis direction of the component.

[0079] Operation C, for each NV center, subtract the electric field signal between all adjacent two detection time points, get the local electric field signal jump, this local electric field jump from two parts: the electric field generated by the charge of NV center and the electric field generated by the electron point defect. For the first part, the charge state jump from the NV center can be identified by the presence or absence of the spectral information of the NV center, first distinguish the electric field jump at other NV centers caused by the charge state jump of the NV center, subtract the jump signal generated by the charge state jump of the NV center from all the jump signals of the NV center, and the remaining jump signal is derived from the electron point defect. Cluster analysis of the remaining jump signal can obtain the electric field change at each NV center caused by the charge state jump of the electron point defect.

[0080] Operation D, since the electric field generated by the charge at each NV center at other NV centers depends on the relative position between NV centers, the electric field information of each probe point defect at the corresponding each probe point defect can be listed as an equation, which can be solved after being combined. The relative position of each NV center can be verified by combining the STORM super-resolution microscopic imaging technology.

[0081] Operation E: since the electric field generated by the charge at each defect at each NV center depends on the relative position between the defect and the NV center, an equation can be listed for each electric field result, and the relative position of the electron point defect and each corresponding NV center can be solved by combining the relative position of several NV centers.

[0082] Figure 2 A structure block diagram of a detection device for electron point defects in a solid material is shown according to an embodiment of the present application. As Figure 2 shown, the detection device 200 includes a first acquisition module 210, a first obtaining module 220, a combination module 230, a first classification module 240, a second obtaining module 250, a second acquisition module 260, and a third obtaining module 270.

[0083] In response to the probe point defects in the sample emitting fluorescence, the first acquisition module 210 is adapted to acquire spectral information corresponding to each probe point defect according to the fluorescence, and obtain the local electric field signal of the probe point defect according to the spectral information corresponding to the probe point defect. In an embodiment, the first acquisition module 210 can be used to perform the operation S110 described above, and details are not repeated here.

[0084] The first obtaining module 220 is adapted to obtain the local electric field signal of the plurality of probe point defects in the sample jumping at the same time as the charge state of each electron point defect in the sample jumping, that is, the plurality of probe point defects jumping corresponding to the associated jump of the electron point defect, and obtain the jump signal of the probe point defect according to the local electric field signal of the probe point defect before and after the jump. In an embodiment, the first obtaining module 220 can be used to perform the operation S120 described above, and details are not repeated here.

[0085] After the plurality of charge state jumps occur, the combination module 230 is adapted to combine the jump signals of all the probe point defects into a multi-dimensional space, and the plurality of jump signals of the associated jump caused by the electron point defect have the same position in the multi-dimensional space. In an embodiment, the combination module 230 can be used to perform the operation S130 described above, and details are not repeated here.

[0086] The first classification module 240 is adapted to perform first classification on the jump signals in the multi-dimensional space, wherein each class of jump signals in the first classification corresponds to the charge state jump of the same electron point defect. In an embodiment, the first classification module 240 can be used to perform the operation S140 described above, and details are not repeated here.

[0087] The second obtaining module 250 is adapted to obtain the electric field information of each electron point defect at each corresponding probe point defect according to each class of jump signal in the first classification. In an embodiment, the second obtaining module 250 can be used to perform the operation S150 described above, and details are not repeated here.

[0088] The second acquisition module 260 is adapted to acquire the relative positions of the respective probe point defects. In an embodiment, the second acquisition module 260 can be used to perform the operation S160 described above, and details are not repeated here.

[0089] The third obtaining module 270 is adapted to obtain the relative positions of the electron point defect and the corresponding plurality of probe point defects according to the electric field information of each electron point defect at the corresponding plurality of probe point defects and the relative positions of the plurality of probe point defects corresponding to the electron point defect, and complete the detection of the electron point defect. In an embodiment, the third obtaining module 270 can be used to perform the operation S170 described above, and details are not repeated here.

[0090] According to an embodiment of the present disclosure, any of the first obtaining module 210, the first deriving module 220, the combining module 230, the first classifying module 240, the second deriving module 250, the second obtaining module 260, and the third deriving module 270 can be combined in one module, or any of them can be split into multiple modules. Alternatively, at least part of the function of one or more of these modules can be combined with at least part of the function of other modules and implemented in one module. According to an embodiment of the present disclosure, at least one of the first obtaining module 210, the first deriving module 220, the combining module 230, the first classifying module 240, the second deriving module 250, the second obtaining module 260, and the third deriving module 270 can be at least partially implemented as a hardware circuit, such as a field programmable gate array (FPGA), a programmable logic array (PLA), a system on chip, a system on board, a system on package, an application specific integrated circuit (ASIC), or any other reasonable way of integrating or packaging a circuit, etc. hardware or firmware, or any one of software, hardware and firmware or a proper combination of any of them. Alternatively, at least one of the first obtaining module 210, the first deriving module 220, the combining module 230, the first classifying module 240, the second deriving module 250, the second obtaining module 260, and the third deriving module 270 can be at least partially implemented as a computer program module that can perform corresponding functions when running.

[0091] Figure 3 A structural block diagram of a system for detecting electron point defects in a solid material according to an embodiment of the present application is shown.

[0092] As shown in Figure 3 The detection system 300 includes an excitation light module 310, a microscope objective 320, a fluorescence collection module 330, and a computer 340.

[0093] The excitation light module 310 is adapted to emit excitation light to cause the probe point defects in the sample under test to emit fluorescence. The microscope objective 320 is adapted to collect the fluorescence. The fluorescence collection module 330 is adapted to collect the fluorescence collected by the microscope objective. The computer 340 is adapted to perform the detection method described above.

[0094] According to an embodiment of the present application, the microscope objective is also adapted to focus the excitation light onto the sample under test. The detection system 300 further includes a dichroic mirror 350 adapted to separate the excitation light and the fluorescence signal based on wavelength, transmit the fluorescence signal to the fluorescence collection module 330, and prevent the excitation light from entering the fluorescence collection module 330.

[0095] The above-described specific embodiments further illustrate the purpose, technical solutions and beneficial effects of the present application, and it should be understood that the above-described is only a specific embodiment of the present application and is not intended to limit the present application, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims

1. A method for detecting an electronic point defect in a solid material, comprising: emitting fluorescence in response to a probe point defect in a sample to be measured, obtaining spectral information corresponding to each probe point defect according to the fluorescence, and obtaining a local electric field signal of the probe point defect according to the spectral information corresponding to the probe point defect; jumping of a local electric field signal of a plurality of probe point defects in the sample to be measured while a charge state of each electronic point defect in the sample to be measured jumps, that is, the local electric field signals of the plurality of probe point defects jump in association with the electronic point defect, and obtaining a jump signal of the probe point defect according to the local electric field signals of the probe point defect before and after the jumping; combining jump signals of all probe point defects into a first multi-dimensional space after a plurality of charge state jumps, and the plurality of jump signals caused by the associated jumping of the same electronic point defect having the same position in the multi-dimensional space; first classifying the jump signals in the multi-dimensional space, wherein each class of jump signals in the first classification corresponds to a charge state jump of the same electronic point defect; obtaining electric field information of each electronic point defect at each corresponding probe point defect according to each class of jump signals in the first classification; obtaining relative positions of the probe point defects; obtaining relative positions of the probe point defects, and obtaining relative positions of the electronic point defect and the corresponding plurality of probe point defects according to the electric field information of each electronic point defect at the corresponding plurality of probe point defects and the relative positions of the plurality of probe point defects corresponding to the electronic point defect, and completing detection of the electronic point defect; wherein the charge state of the probe point defect jumps multiple times, and the jumping of the charge state of the probe point defect causes other probe point defects to generate jump signals; obtaining relative positions of the probe point defects, comprising: combining jump signals of the probe point defects generated by jumping of the charge state of the probe point defects into a second multi-dimensional space; second classifying the jump signals in the second multi-dimensional space, wherein each class of jump signals in the second classification corresponds to a charge state jump of the same probe point defect; obtaining electric field information of each probe point defect at each corresponding other probe point defect according to each class of jump signals in the second classification; obtaining relative positions of the probe point defects according to the electric field information of each probe point defect at each corresponding other probe point defect.

2. The method of claim 1, wherein, obtaining electric field information of each electronic point defect at each corresponding probe point defect according to each class of jump signals in the first classification, comprising: averaging the plurality of jump signals of each probe point defect for each class in the first classification to obtain electric field information at each probe point defect.

3. The method of claim 1, wherein, a generation mode of the probe point defect in the sample to be measured comprises: the sample to be measured generates spontaneously or excitation light is directly written on the sample to be measured, the sample to be measured is subjected to electron irradiation or high-temperature annealing.

4. The method of claim 1, wherein, the charge state of the electronic point defect changes from a spontaneous process, light excitation or electrical excitation.

5. The method of claim 1, wherein, the sample to be measured is a semiconductor, and the semiconductor comprises silicon, silicon carbide or diamond.

6. The method of claim 1, wherein, first classifying the jump signals in the multi-dimensional space comprises using a clustering analysis algorithm to first classify the jump signals in the multi-dimensional space.

7. The method of probing of claim 1, wherein, The jump signal of the probe point defect is obtained according to the local electric field signals of the probe point defect before and after the jump. The jump signal of the probe point defect is obtained by subtracting the local electric field signals of the probe point defect before and after the jump.

8. A device for detecting an electronic point defect in a solid material, for performing the detection method of any one of claims 1-7, the device comprising: A first acquisition module, in response to the probe point defect in the sample under test emitting fluorescence, acquiring spectral information corresponding to each probe point defect according to the fluorescence, and obtaining the local electric field signal of the probe point defect according to the spectral information corresponding to the probe point defect; A first obtaining module, adapted to obtain the jump signal of the probe point defect according to the local electric field signals of the probe point defect before and after the jump, when the charge state of each electronic point defect in the sample under test jumps, and the local electric field signals of multiple probe point defects in the sample under test jump, i.e., multiple probe point defects undergo associated jumps corresponding to the electronic point defect; A combination module, after multiple charge state jumps occur, combining the jump signals of all probe point defects into a multi-dimensional space, and the positions of multiple jump signals of the associated jumps caused by the electronic point defect in the multi-dimensional space being the same; A first classification module, adapted to perform first classification on the jump signals in the multi-dimensional space, wherein each class of jump signals in the first classification corresponds to the charge state jump of the same electronic point defect; A second obtaining module, adapted to obtain the electric field information of each electronic point defect at each corresponding probe point defect according to each class of jump signal in the first classification; A second acquisition module, adapted to acquire the relative positions of the probe point defects; A third obtaining module, adapted to obtain the relative positions of the electronic point defect and the corresponding multiple probe point defects according to the electric field information of each electronic point defect at the corresponding multiple probe point defects and the relative positions of the multiple probe point defects corresponding to the electronic point defect, and complete the detection of the electronic point defect.

9. A detection system for an electronic point defect in a solid material, comprising: An excitation light module, adapted to emit excitation light to make a probe point defect in a sample under test emit fluorescence; A microscope objective, adapted to collect the fluorescence; A fluorescence collection module, adapted to collect the fluorescence collected by the microscope objective; A computer, adapted to perform the method of any one of claims 1-7.

Images