A quantum gas pressure sensor based on V B - Quantum gas pressure sensor based on V

Abstract

The application discloses a kind of based on V B ‑ The quantum gas pressure sensor of color center includes gas pressure cavity, quartz plate with sample substrate, confocal scanning imaging mechanism and microwave detection mechanism with time sequence card, after being connected with the whole device of gas pressure sensor by gas pipe, measured V B ‑ The ODMR signal change of spin color center is obtained corresponding to the gas pressure intensity.The application also provides a use method.The sensor provided by the application utilizes the advantage of phonon-assisted enhancement when hexagonal boron nitride is suspended, has multiple times of photoluminescence enhancement compared with other regions, and can realize gas pressure sensing response with micron-level spatial resolution.

Description

TECHNICAL FIELD

[0001] The present invention belongs to the field of solid-state quantum and sensors, and in particular to a quantum pressure sensor based on V B - Color center quantum pressure sensor and method of use. BACKGROUND

[0002] Spin color centers in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Spin color centers in three-dimensional wide band gap materials have been widely used in both fundamental research and practical applications in quantum science, with the most prominent system being the nitrogen-vacancy (NV) color center system in diamond. NV color centers allow optical polarization, microwave manipulation, and optical readout of spin states, and map changes in the external field environment (magnetic field, electric field, temperature, pressure, etc.) to changes in their ODMR and spin coherence properties. However, NV color centers in diamond have inherent limitations. The three-dimensional nature of the material makes it difficult to produce spin defects near the surface, making it challenging to bring the spin defects close to the object being sensed and the external field. In addition, the proximity to the surface degrades their spin coherence, affecting their sensitivity as nanosensors.

[0003] Research has shown that spin color centers in two-dimensional materials can be used as precise quantum sensors, and due to the layered structure of two-dimensional materials, spin color centers therein can be positioned at a distance of only a few angstroms from the object being measured, with high sensitivity. Hexagonal boron nitride is one of the prominent stackable two-dimensional materials, which contains a large number of single-photon emission defects, spin-readout and initialization defects, and the current understanding of the rich defects in hexagonal boron nitride has been greatly researched in theory and experiment. The most well-known spin defect is the negatively charged boron vacancy center (VB-), which can be easily produced by neutron irradiation, ion implantation, or femtosecond laser pulses.

[0004] Patent document CN115655528A discloses a flexible pressure sensor based on two-dimensional quantum tunneling force mechanism and a preparation method. The sensor is composed of a top electrode, an intermediate dielectric layer, a bottom electrode and a flexible substrate layer; the top electrode is a conformal carbon nanofilm, the intermediate dielectric layer is hexagonal boron nitride (HBN), and the bottom electrode is single-layer graphene; the conformal carbon nanofilm is composed of graphene nanowalls with microstructure and a flexible substrate. Its working mechanism is the change of two-dimensional interlayer quantum tunneling current caused by microstructure deformation under pressure. The sensor has a small detectable range.

[0005] Patent document CN115683440A discloses a high-resolution graphene heterojunction gas pressure sensor, which uses a graphene / hexagonal boron nitride / graphene (G / h-BN / G) vertical heterojunction film as a pressure-bearing diaphragm. The sensor substrate has a micro-nano arrayed cavity structure. Under the action of gas pressure, the G / h-BN / G film can produce localized internal stress. The localized internal stress of the G / h-BN / G film changes the energy band structure of the vertical heterojunction film, causing changes in the tunneling current between the upper and lower graphene layers, thereby reflecting changes in external gas pressure. SUMMARY

[0006] The purpose of the present application is to provide a quantum gas pressure sensor and a use method, which can achieve micron-level detection accuracy, thereby realizing more accurate external gas pressure detection.

[0007] To achieve the first purpose of the present application, a quantum gas pressure sensor based on V B - Color center, comprising a gas pressure cavity, a quartz plate with a sample substrate, a confocal scanning imaging mechanism, and a microwave detection mechanism with a time sequence card.

[0008] The quartz plate and the sample substrate are both provided with gold waveguides and are connected by silver glue to form a microwave radiation circuit.

[0009] The gas pressure cavity is used to provide a pressure environment to be measured, and the quartz plate is located in the gas pressure cavity. A circular ring-shaped photoresist is used to form a sealed gas cavity with the hexagonal boron nitride sample on the sample substrate.

[0010] The confocal scanning imaging mechanism is used to collect the photoluminescence spectrum of the hexagonal boron nitride sample. The hexagonal boron nitride sample is subjected to helium ion implantation to produce V B - Spin defects.

[0011] The microwave detection mechanism sends microwaves and laser light to the hexagonal boron nitride sample in the gas pressure cavity based on the photoluminescence spectrum, and generates an optical detection magnetic resonance result of the hexagonal boron nitride sample in a time sequence of microwave transmission.

[0012] The D value is obtained by fitting the optical detection magnetic resonance result, and the relationship between the D value and the change in gas pressure is established.

[0013] The application adopts a helium ion microscope ion implantation method of autonomous exploration, can determine a bright and stable VB-spin defect in hexagonal boron nitride, designs a vacuum cavity capable of transmitting microwaves and pumping pressure, simultaneously uses a gold waveguide to transmit microwaves to measure high-contrast ODMR, uses electron beam lithography negative glue HSQ combined with dry transfer technology of two-dimensional materials to manufacture a hexagonal boron nitride film gas chamber, and thus a quantum sensor capable of measuring external air pressure is manufactured.

[0014] Specifically, the hexagonal boron nitride sample adopts a thin film structure.

[0015] Specifically, the air pressure cavity is provided with a support for suspending a quartz plate, a calibrated air pressure gauge for measuring internal pressure, and an air pump for adjusting internal pressure.

[0016] Specifically, the quartz plate is further provided with an SMA interface for microwave radiation circuit microwave signals, and the SMA interface is provided with an overload protection resistor.

[0017] Specifically, the sample substrate includes a SiO2 / Si substrate and a 50um wide gold waveguide prepared by nanofabrication technology.

[0018] Specifically, the confocal scanning imaging mechanism includes a 532nm laser, an incident end optical coupler, a collection end optical coupler, a 532nm bandpass filter, a 750nm long-pass filter, a half-transmission half-reflection mirror, a 2cm working distance 50x objective lens, and a three-dimensional nanometer displacement table.

[0019] The pump light generated by the laser is collimated through the incident end coupler, filtered through the bandpass filter, and transmitted through the half-transmission half-reflection mirror to be focused on the hexagonal boron nitride sample in the air pressure cavity by the objective lens, and at the same time, the signal light and the reflected light of the hexagonal boron nitride sample are collected by the objective lens, emitted by the half-transmission half-reflection mirror, filtered out by the long-pass filter, and collected by the collection end optical coupler into an optical fiber to obtain the corresponding photoluminescence spectrum.

[0020] Specifically, the microwave detection mechanism includes a microwave generator, a power amplifier, a single photon detector, a data acquisition card, and a computer with a time sequence card.

[0021] The microwave generator sequentially emits microwave signals to the hexagonal boron nitride sample to be measured based on the switching time sequence sent by the computer.

[0022] The power amplifier is used to amplify the microwave signals emitted by the microwave generator.

[0023] The single photon detector is used to acquire the fluorescence signals transmitted by the confocal scanning imaging mechanism.

[0024] The data acquisition card counts the fluorescence signal acquired by the single photon detector;

[0025] The computer generates the optical detection magnetic resonance result of the hexagonal boron nitride sample according to the sent switch time sequence, the fluorescence signal and the corresponding counting result.

[0026] Specifically, the output frequency range of the microwave generator is 25Mhz-6000Mhz.

[0027] Specifically, the working frequency range of the power amplifier is 50Mhz-18000Mhz.

[0028] Specifically, the optical detection magnetic resonance result includes resonance frequency and contrast;

[0029] The difference between the fluorescence signal intensity when the microwave generator is turned on and when the microwave generator is turned off is obtained.

[0030] In order to realize the second object of the application, a use method of the above-mentioned quantum gas pressure sensor is provided, comprising the following steps:

[0031] In the gas pressure cavity, the hexagonal boron nitride sample is arranged on the quartz circuit board and connected with the waveguide on the quartz plate, and SMA heads are welded on both sides of the quartz waveguide for connecting coaxial cables and resistors;

[0032] The photoluminescence spectrum of the hexagonal boron nitride sample is obtained through the confocal scanning imaging mechanism;

[0033] Based on the photoluminescence spectrum, the V B - The position of the spin defect is found, and the microwave detection mechanism is adjusted for optical detection magnetic resonance detection;

[0034] Based on the optical detection magnetic resonance result, the accurate D value is obtained by adopting a double-peak Lorentz function fitting, and according to the pre-constructed relationship between the D value and the change of the gas pressure, the size of the external gas pressure is obtained.

[0035] Compared with the prior art, the beneficial effects of the present application are:

[0036] The present application is based on the structure of the suspended closed gas chamber of the hexagonal boron nitride film, and the other regions have multiple photoluminescence enhancement through phonon-assisted enhancement when the film is suspended, so that the response of the micron-level spatial resolution gas pressure sensor is realized. BRIEF DESCRIPTION OF DRAWINGS

[0037] Figure 1 The schematic diagram of the gas pressure sensor provided for the embodiment is shown in the figure;

[0038] Figure 2VB-spin defect atomic structure and energy level structure of hexagonal boron nitride;

[0039] Figure 3 The base of the air pressure cavity is shown schematically;

[0040] Figure 4 The upper cover of the air pressure cavity is shown schematically;

[0041] Figure 5 The window sheet is shown schematically;

[0042] Figure 6 The quartz plate is shown schematically;

[0043] Figure 7 The sample substrate is shown schematically;

[0044] Figure 8 The overall air pressure cavity is shown schematically;

[0045] Figure 9 The air pressure structure of the hexagonal boron nitride film is shown schematically from above;

[0046] Figure 10 The air pressure structure of the hexagonal boron nitride film is shown schematically in cross-section;

[0047] Figure 11 The hexagonal boron nitride film is shown schematically under air pressure deformation simulation;

[0048] Figure 12 The hexagonal boron nitride film is shown schematically under air pressure deformation simulation in cross-section;

[0049] Figure 13 The SEM of the air pressure structure of the hexagonal boron nitride film designed and made;

[0050] Figure 14 The V B - Spin defect array PL Map;

[0051] Figure 15 The ODMR data under different air pressures is measured;

[0052] Figure 16 The D value of the ODMR changes with the response of the air pressure;

[0053] Figure 17 The relative strain of the hexagonal boron nitride film changes with the air pressure. DETAILED DESCRIPTION

[0054] The technical solutions in the embodiments of the present application will be clearly and completely described in the following with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0055] The embodiment provides a V B - The color center quantum gas pressure sensor, as shown, comprises a gas pressure cavity, a quartz plate with a sample substrate, a confocal scanning imaging mechanism, and a microwave detection mechanism with a time sequence card. Figure 1

[0056] The sample substrate comprises a 10mm*10mm sized 285-nm SiO2 / Si substrate, a 50-um wide gold waveguide microwave radiation circuit, and V B - The spin defect array sample and the electron beam lithography HSQ generated ring column.

[0057] The quartz plate comprises the gold waveguide circuit and is in conduction with the circuit of the sample substrate.

[0058] The confocal scanning imaging mechanism comprises a 532nm laser, an incident end optical coupler, a collection end optical coupler, a 532nm band-pass filter, a 750nm long-pass filter, a half-transmission half-reflection mirror, a 2cm working distance 50*objective lens, and a three-dimensional nanometer displacement table.

[0059] The pump light generated by the laser is collimated through the incident end coupler, filtered through the band-pass filter, and transmitted through the half-transmission half-reflection mirror to be focused by the objective lens on the hexagonal boron nitride sample in the gas pressure cavity, and meanwhile the signal light and the reflected light of the hexagonal boron nitride sample are collected by the objective lens, emitted by the half-transmission half-reflection mirror, filtered out by the long-pass filter, and collected by the collection end optical coupler into an optical fiber, so as to obtain the corresponding photoluminescence spectrum.

[0060] The microwave detection mechanism comprises a microwave generator, a power amplifier, a single photon detector, a data acquisition card, and a computer with a time sequence card.

[0061] The microwave generator sequentially sends microwave signals to the hexagonal boron nitride sample to be detected based on the switching time sequence sent by the computer.

[0062] The power amplifier is used for amplifying the microwave signals sent by the microwave generator.

[0063] The single photon detector is used for acquiring the fluorescence signals delivered by the confocal scanning imaging mechanism.

[0064] ​A data acquisition card counts the fluorescence signals obtained by the single photon detector.

[0065] The computer generates the optical detection magnetic resonance result of the hexagonal boron nitride sample according to the transmitted switch time sequence, the fluorescence signals and the corresponding counting result.

[0066] More specifically, first, a coplanar gold waveguide is made on a SiO2 / Si substrate using ultraviolet lithography and electron beam evaporation plating technology for conducting microwaves (for regulating spin energy levels) and enhancing using the surface plasmon effect of the metal (the spin defect is placed on the waveguide).

[0067] After the coplanar waveguide is made on the SiO2 / Si substrate, a hollow cylinder is made using electron beam lithography (EBL) with negative glue HSQ (Fox 16) for subsequent generation of hBN cavities, and the overlay position is on the coplanar waveguide.

[0068] Subsequently, using a self-made two-dimensional material transfer platform, using PC and PDMS, taking advantage of the difference in adhesion of two-dimensional materials and PC at different temperatures, the hBN flakes are transferred to the HSQ cavity to form a closed cavity structure, and the hBN thin film cavity structure is completed.

[0069] Subsequently, helium ion microscope (HIM) is used for helium ion implantation. During the implantation process, the helium ion hits the hBN, causing the B atoms in the hBN to be knocked out of the lattice and form a vacancy defect. The vacancy defect is equivalent to a potential well, which captures an electron to form a V B - Spin color center. According to the knowledge of quantum mechanics, at this time the energy level of the electron is discrete, and the ground state of the overall energy level structure exhibits a ground state triplet. According to the understanding of this energy level structure in the past, we can initialize the spin, coherently manipulate and read out the spin of this system, which can be applied to quantum computing (after optimizing the coherence time) and quantum sensing. Since hBN is a two-dimensional material, it has natural advantages as a quantum sensor, such as thin film characteristics. Using a laser and a microwave source, we can detect V B - The optical detection magnetic resonance value of the spin defect when the zero-field ground state jumps to the excited state energy level. This value is only related to V B - The spin defect itself, the lattice defect, and the external field are related. When the hBN is strained, the lattice will be stretched, which will cause V B - The energy level of the spin defect is displaced, and a self-built cage optical path is used for reading.

[0070] When the gas pressure is applied to the hBN sheet, the hBN sheet is strained, and the V B -The value of the optical detection magnetic resonance can be obtained by the change of the spin defect level, and the quantum gas pressure sensor is formed.

[0071] As shown in Figure 2 , the atomic defects and their energy level structure are initialized and regulated, and the ODMR signal (optical detection magnetic resonance result) is measured. According to the strain of the hexagonal boron nitride film caused by the external gas pressure, the V B - The lattice structure of the defect changes, affecting the position of the ODMR spectrum, forming the response of the gas pressure and the ODMR.

[0072] As shown in Figure 3 , Figure 4 and Figure 5 , the base of the gas pressure cavity is used to support and fix the quartz plate, and is used to connect the external gas source, microwave transmission line and calibration barometer. The base is fixed on the three-dimensional nanometer displacement table. The gas pressure cover is used to cover the base of the gas pressure cavity, and a large through hole is left in the middle to carry the window sheet. The laser passes through the window sheet and is incident on the sample on the substrate. The upper cover and the base are connected through the buffer of the middle O ring, and finally achieve the purpose of sealing and pressurizing. The window sheet is pressed by the lower O ring and the rotating gasket to achieve the sealing effect.

[0073] As shown in Figure 6 , the quartz plate is used to carry the substrate sample and conduct microwave to the substrate gold waveguide. The quartz plate is fixed on the gas pressure cavity base by screws. The hole in the middle is used to fix the SMA connector, one side of which is connected to the microwave line and the other side is connected to the 50 load.

[0074] As shown in Figure 7 , the substrate sample is a 285-nm SiO2 / Si substrate with a size of 10mm×10mm and a total thickness of about 0.5mm. There is a gold waveguide fabricated by micro-nano processing on the substrate. When the microwave passes through the coplanar waveguide, the V B - The defect is spin-regulated.

[0075] As shown in Figure 8As shown, the hexagonal boron nitride sample is transferred to the HSQ ring column prepared in advance, and the HSQ is etched on the gold waveguide to facilitate obtaining high-contrast ODMR; the entire substrate is welded to the quartz plate using silver glue, the quartz plate is fixed on the air pressure cavity base, two SMA joints are fixed on each side of the quartz plate, one end is connected to the 50 load, and the other end is connected to the microwave transmission line to prevent the microwave source from being overloaded and burned out, the transmission line is connected to the amplifier through the hole of the air pressure cavity base, and the AB glue is used to seal the hole; the other two holes of the air pressure cavity base are connected to the air pressure source and the calibration manometer respectively, and the O-ring is arranged between the air pressure cavity cover and the base, and the air pressure cavity cover is fixed by screws; the air pressure cavity cover has a window in the middle, and the whole core device is as described above. The obtained fluorescence count is input into the data acquisition card and computer for analysis through the single photon detector.

[0076] As shown in Figure 9 , the structure formed by transferring the hexagonal boron nitride film to the silicon oxide ring column on the gold waveguide, the ring column is etched on the gold waveguide by electron beam lithography glue HSQ.

[0077] As shown in Figure 10 , it is a cross-sectional view of the hexagonal boron nitride film gas chamber structure, it can be seen that when the hexagonal boron nitride covers the upper end surface of the ring column, a closed gas chamber is formed, when an external pressure is applied, the hexagonal boron nitride will be strained, and then the crystal lattice will change, and the ODMR spectrum will change, and the external pressure value can be obtained according to the D value of the ODMR.

[0078] As shown in Figure 11 , it is a surface strain simulation diagram of the hexagonal boron nitride film under the action of external pressure.

[0079] As shown in Figure 12 , it is a cross-sectional simulation diagram of the hexagonal boron nitride film under the action of external pressure.

[0080] Figure 13 It is a SEM image of the actual designed hexagonal boron nitride film gas chamber structure, it can be clearly seen that the hexagonal boron nitride film, the HSQ ring column and the gold waveguide, after successful transfer, the helium ion microscope is used for focusing ion implantation, the helium ion is implanted, the energy is 30keV, the dose is 10 17 ions / cm 2 , the spin defect array PL Map (photoluminescence spectrum) is generated, and the PLMap is as shown in Figure 14 .

[0081] When the microwave source and the amplifier are turned on, the V B -For the ODMR of spin defects, the microwave source frequency was set to 3200MHz-3800MHz. The brightest defect point on the hexagonal boron nitride thin film gas cell structure was selected. A locking-point auxiliary program was used to prevent sample point drift during the measurement. The measurement results are as follows: Figure 15 As shown.

[0082] like Figure 16 As shown, the relationship between external pressure and the D value of ODMR is obtained by fitting using the bimodal Lorentz function ((D1+D2) / 2), and then the relationship between external pressure and the D value of ODMR is obtained.

[0083] like Figure 17 As shown, based on the relationship between external pressure and the D value of ODMR, the relative strain relationship between external pressure and hexagonal boron nitride thin film is constructed. Based on this relative strain relationship, the precise measurement of the quantum pressure sensing device proposed in this embodiment is realized.

[0084] This embodiment also provides a method for using the quantum pressure sensor based on the above embodiments, including the following process:

[0085] The entire quartz plate containing the sample was placed in a specially designed aluminum alloy vacuum chamber (capable of creating a vacuum environment and conducting microwaves). Above the aluminum alloy vacuum chamber was a transparent window for laser incident and V-shaped light transmission. B - By collecting photoluminescence and observing the change in fluorescence intensity when microwaves are applied, we obtain the photodetector magnetic resonance signal.

[0086] Specifically, the data measurement involves measuring the different strains (V) generated above the hBN cavity under different external air pressure values. B - The lattice parameters around the defect are different. When a laser is incident on the spin defect, it polarizes the spin state m. s =0 state, when microwaves are applied, the energy level is pumped to m s =±1 states. Due to the different proportions of nonradiative transitions in different spin-excited states, the microwave source sweeps the frequency to m... s =0 state to m s When the fluorescence count is ±1, the measured fluorescence count is different. The collected fluorescence signal is then transmitted to a single-photon detector, which converts the optical signal into an electrical signal. The electrical signal is then transmitted to the NI counting card for counting. The data from the NI counting card is processed in real time according to the programmed procedure to obtain the photodetector magnetic resonance spectrum. The D value is obtained by using a bimodal Lorentz fit, and the corresponding air pressure value is calculated based on the D value.

[0087] More specifically, the process begins with a self-made PL Map scanning program. A laser continuously pumps onto the sample, while a piezoelectric ceramic displacement stage with an aluminum alloy gas pressure chamber underneath moves according to the set position range, scanning out a photoluminescence map of a region on the sample.

[0088] Find V according to the scanned PL Map B - Adjust the focus of the displacement stage, and prepare to measure the ODMR spectrum.

[0089] Run the ODMR program, which will first use the AOM to control the laser for a period of time, so that V B - The color center is fully spin polarized; ④ turn off the laser and turn on the microwave source to pump the spin level, then turn on the NI counting card to count a point of data at a microwave frequency.

[0090] Then repeat the previous three operations, constantly changing the microwave frequency, and after the frequency sweep is completed, the ODMR spectrum is obtained.

[0091] According to the obtained ODMR, use the double-peak Lorentz function to fit to obtain the accurate D value (the energy difference between the ground state and the excited state under zero field); ⑦ According to the D value of the obtained ODMR spectrum, the size of the external gas pressure is obtained.

Claims

1. A quantum gas pressure sensor based on V B - A quantum gas pressure sensor of color centers characterized by The quartz plate with a sample substrate, a confocal scanning imaging mechanism and a microwave detection mechanism with a time sequence card are arranged in the air pressure cavity. The quartz plate and the sample substrate are both provided with gold waveguides and are connected by silver glue to form a microwave radiation circuit. The air pressure cavity is used to provide a pressure environment to be measured. The quartz plate is located in the air pressure cavity and a sealed air cavity is formed between the sample substrate, the circular ring photoresist and the hexagonal boron nitride sample. The confocal scanning imaging mechanism is used for collecting photoluminescence spectrum of the hexagonal boron nitride sample, and the hexagonal boron nitride sample is subjected to V B - Spin defects; The microwave detection mechanism is based on photoluminescence spectrum and sends microwaves and laser to the hexagonal boron nitride sample in the air pressure cavity to generate the photoluminescence magnetic resonance result of the hexagonal boron nitride sample according to the time sequence of the microwave sending. The D value is obtained by fitting the photoluminescence magnetic resonance result to establish the relationship between the D value and the air pressure change.

2. The hexagonal boron nitride-based V B - A quantum gas pressure sensor of color centers, characterized by The air pressure cavity is provided with a support for suspending the quartz plate, a calibrated air pressure gauge for measuring the internal pressure and an air pump for adjusting the internal pressure.

3. The hexagonal boron nitride-based V B - A quantum gas pressure sensor of color centers, characterized by The quartz plate is also provided with an SMA interface for the microwave signal of the microwave radiation circuit, and the SMA interface is provided with an overload protection resistor.

4. The hexagonal boron nitride-based V B - A quantum gas pressure sensor of color centers, characterized by The sample substrate includes a SiO2 / Si substrate and a 50um wide gold waveguide prepared by nanofabrication technology.

5. The hexagonal boron nitride-based V B - A quantum gas pressure sensor of color centers, characterized by The confocal scanning imaging mechanism includes a 532nm laser, an incident end optical coupler, a collection end optical coupler, a 532nm band-pass filter, a 750nm long-pass filter, a half-transmission half-reflection mirror, a 2cm working distance 50x objective lens and a three-dimensional nanometer displacement stage. The pump light generated by the laser is collimated by the incident end coupler, filtered by the band-pass filter and transmitted through the half-transmission half-reflection mirror, focused by the objective lens on the hexagonal boron nitride sample in the air pressure cavity, and at the same time, the signal light and the reflected light of the hexagonal boron nitride sample are collected by the objective lens, emitted by the half-transmission half-reflection mirror, filtered by the long-pass filter and collected by the collection end optical coupler into the optical fiber to obtain the corresponding photoluminescence spectrum.

6. The hexagonal boron nitride-based V B - A quantum gas pressure sensor of color centers, characterized by The microwave detection mechanism includes a microwave generator, a power amplifier, a single photon detector, a data acquisition card and a computer with a time sequence card. The microwave generator sequentially sends microwave signals to the hexagonal boron nitride sample to be measured based on the switch time sequence sent by the computer. The power amplifier is used to amplify the microwave signal sent by the microwave generator. The single photon detector is used to acquire the fluorescence signal delivered by the confocal scanning imaging mechanism. The data acquisition card counts the fluorescence signal acquired by the single photon detector. The computer generates the photoluminescence magnetic resonance result of the hexagonal boron nitride sample according to the sent switch time sequence, the fluorescence signal and the corresponding counting result.

7. The hexagonal boron nitride-based V B - A quantum gas pressure sensor of color centers, characterized by The output frequency range of the microwave generator is 25Mhz-6000Mhz.

8. The hexagonal boron nitride-based V B - A quantum gas pressure sensor of color centers, characterized by The working frequency range of the power amplifier is 50Mhz-18000Mhz.

9. The hexagonal boron nitride-based V B - A quantum gas pressure sensor of color centers, characterized by The photoluminescence magnetic resonance result includes resonance frequency and contrast. The difference between the fluorescence signal intensity when the microwave generator is turned on and when the microwave generator is turned off is obtained.

10. A method of using a quantum barosensor according to any one of claims 1 to 9, characterized in that, The method includes the following steps: In the air pressure cavity, the hexagonal boron nitride sample is arranged on the quartz circuit board and connected with the waveguide on the quartz plate, and SMA heads are welded on both sides of the quartz waveguide for connecting coaxial cables and resistors. The photoluminescence spectrum of the hexagonal boron nitride sample is acquired through a confocal scanning imaging mechanism; finding V in the hexagonal boron nitride sample based on the photoluminescence spectrum B - the position of the spin defect, and adjusting the microwave detection mechanism for optically detected magnetic resonance detection; Based on the light detection magnetic resonance result, the accurate D value is obtained by adopting a double-peak Lorentz function fitting, and according to the pre-constructed relationship between the D value and the air pressure change, the size of the external air pressure is obtained.

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