A vertical film forming device substrate transfer equipment

Abstract

The present invention discloses a substrate transfer device for a vertical film-forming device, which relates to the technical field of semiconductor material production equipment. The main structure includes an operating chamber and a wafer in-and-out chamber; a first valve is provided between one side of the operating chamber and one side of the reaction chamber of the vertical film-forming device; a second valve is provided between the other side of the operating chamber and one side of the wafer in-and-out chamber; a third valve is provided on the other side of the wafer in-and-out chamber; a first conveying mechanism is provided in the operating chamber, and the first conveying mechanism is used to transport items between the reaction chamber and the wafer in-and-out chamber; a second conveying mechanism is provided on the outside of the other side of the wafer in-and-out chamber, and the second conveying mechanism is used to transport or remove items to or from the wafer in-and-out chamber. The loading and replacement of substrates in the reaction chamber can be completed in a short time, and the film-forming process can be quickly restored. The time proportion of the cooling section in the film-forming process is shortened, and production efficiency is improved. It has a real-time monitoring function, which observes and records the operation process so that problems can be solved immediately.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material production equipment, and in particular to a substrate transfer device for a vertical film-forming device. Background Art

[0002] Patent publication number CN115747956A discloses a thermal field system for vertical film-forming equipment, relating to the field of semiconductor production equipment technology. The system comprises an intake chamber, a reaction chamber, and a susceptor. The reaction chamber is located at the bottom of the intake chamber and is in communication with the reaction chamber. A susceptor is located in the lower portion of the reaction chamber, directly below the intake chamber. The top of the susceptor supports wafers. A susceptor thermal field is located within the susceptor, heating the wafers. An exhaust port is located at the bottom of the reaction chamber. A sleeve is located within the reaction chamber, with an upper thermal field located between the sleeve and the sidewalls of the reaction chamber. The upper thermal field heats the feed gas, while the susceptor thermal field heats the outer and inner rings of the wafers. Combined with a radiation thermometer and a temperature control module, the surface temperature difference between the wafers is maintained within a reasonable range, preventing deformation or even damage to the wafers caused by the temperature difference between the inner and outer rings, which could affect film quality. Furthermore, the system shortens the time required for wafer loading and recovery to reaction temperature, thereby improving production efficiency. To enable continuous wafer production, the reaction chamber is connected to an external handling system, with a gate valve separating the two chambers. During the cooling section, the surface temperature of the wafers must be reduced to between 700°C and 900°C to meet transfer conditions. The gate valve opens, and the robotic arm reaches into the reaction chamber to transport the wafers and substrates. Heat loss occurs during the wafer transfer process. During continuous production, it takes considerable time for the chamber to return to reaction temperature after the film-forming wafers are loaded. At the front end of the cooling section, the output power of the heating element above the wafer is reduced, and the output power is restored to the warming state in advance during the transfer phase, shortening the time required to reheat the chamber to reaction temperature.

[0003] When preparing semiconductor wafers, the film deposition chamber requires a high temperature environment to ensure rapid film formation after the reactant gases mix and react. After film formation, the chamber must be cooled to the wafer removal temperature and then returned to the required temperature for the film formation phase after wafer reloading. This cycle is time-consuming and impacts production efficiency.

[0004] Therefore, there is an urgent need for a substrate transfer device for a film forming device to shorten the cooling section and the time required for temperature recovery. Summary of the Invention

[0005] In order to solve the above technical problems, the present invention provides a substrate transfer device for a vertical film forming apparatus, which can significantly shorten the time required for the cooling section and temperature recovery.

[0006] To achieve the above object, the present invention provides the following solutions:

[0007] The present invention provides a substrate transfer device for a vertical film forming device, comprising an operating chamber and a chip in-and-out chamber; a first valve is arranged between one side of the operating chamber and one side of the reaction chamber of the vertical film forming device; a second valve is arranged between the other side of the operating chamber and one side of the chip in-and-out chamber; a third valve is arranged on the other side of the chip in-and-out chamber; a first conveying mechanism is arranged in the operating chamber, and the first conveying mechanism is used for conveying articles between the reaction chamber and the chip in-and-out chamber; a second conveying mechanism is arranged on the outside of the other side of the chip in-and-out chamber, and the second conveying mechanism is used for conveying or taking articles into or out of the chip in-and-out chamber.

[0008] Optionally, a temporary storage chamber is further included; a fourth valve is provided between one side of the temporary storage chamber and the operation chamber; and the first transport mechanism is used for transporting items between the reaction chamber, the wafer entry and exit chamber and the temporary storage chamber.

[0009] Optionally, a recording window and / or an observation window and / or a detection window is provided on the top of the temporary storage chamber.

[0010] Optionally, an illumination lamp is provided above the observation window.

[0011] Optionally, a video recording device is provided above the recording window.

[0012] Optionally, a photoelectric switch is provided at the first valve, and the photoelectric switch is used to monitor the status of the first valve.

[0013] Optionally, both the first transport mechanism and the second transport mechanism include robotic arms.

[0014] Optionally, a window is provided on the top of the wafer entry and exit chamber.

[0015] Optionally, a detection sensor is provided above the window.

[0016] Optionally, a box chamber and a calibrator are arranged around the second transport mechanism.

[0017] Compared with the prior art, the present invention has achieved the following technical effects:

[0018] 1. The first transport mechanism is a negative pressure transport mechanism, and the second transport mechanism is a normal pressure transport mechanism. These two mechanisms work together to enable robotic arms to automatically transport wafers and substrates between the reaction chamber, temporary storage chamber, and cassette chamber. After film formation is complete, the robotic arm enters the reaction chamber and transports the substrate to the temporary storage chamber, then moves the substrate to be film-formed into the reaction chamber. Wafers are then transferred from the temporary storage chamber to the wafer cassette chamber via the inlet and outlet normal pressure robotic arms. This system meets the requirements of long-term continuous film formation.

[0019] 2. Isolation valves are installed between the operation chamber, reaction chamber, and wafer inlet and outlet chamber to prevent the exchange of different atmospheres in the three chambers and the contamination generated during the transportation process that affects the quality of the wafers.

[0020] 3. The upper and lower double linkage of the negative pressure transport system can complete the loading and replacement of substrates in the reaction chamber in a short time and quickly resume the film forming process.

[0021] 4. Once the substrate cools to the transfer temperature, it can be removed from the reaction chamber and moved to a temporary storage room for further cooling. This shortens the cooling time during the film formation process and improves production efficiency.

[0022] 5. The negative pressure transfer system has a real-time monitoring function, which observes and records the operation process for immediate troubleshooting. Each chamber can be opened independently to facilitate subsequent maintenance and cleaning. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 It is a structural schematic diagram of the substrate transfer equipment of the vertical film forming device of the present invention;

[0025] Figure 2 It is a schematic structural diagram of the internal structure of the reaction chamber and the transfer chamber in the substrate transfer equipment of the vertical film forming device of the present invention;

[0026] Figure 3 A schematic diagram of the connection between chambers in the negative pressure area and the internal structure of the substrate transfer device of the vertical film forming apparatus of the present invention;

[0027] Figure 4 It is a schematic structural diagram of a multi-reaction chamber common transport device of a substrate transfer device of a vertical film forming apparatus of the present invention.

[0028] Explanation of the accompanying symbols: 1. Reaction chamber; 2. Gate valve; 3. Operation chamber; 4. Negative pressure transport mechanism; 5. Wafer in and out chamber; 6. Normal pressure transport mechanism; 7. Box chamber; 8. Calibrator; 9. Robot arm; 10. Temporary storage chamber; 11. Recording window; 12. Observation window; 13. Detection window; 14. Window; 15. Photoelectric switch; 16. Wafer; 17. Substrate; 18. Base; 19. Lifting mechanism; 20. Video recording device; 21. Detection sensor; 22. Radiation thermometer; 23. Lighting lamp; 24. Lifting platform; 25. Wafer lifting mechanism; 26. Substrate support block; 27. Wafer support block; 28. Proximity switch. DETAILED DESCRIPTION

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0030] Example 1:

[0031] like Figures 1 to 3 As shown, this embodiment provides a substrate transfer device for a vertical film forming device, including an operating chamber 3 and a wafer in-and-out chamber 5; a first valve is arranged between one side of the operating chamber 3 and one side of the reaction chamber 1 of the vertical film forming device; a second valve is arranged between the other side of the operating chamber 3 and one side of the wafer in-and-out chamber 5; a third valve is arranged on the other side of the wafer in-and-out chamber 5; a first conveying mechanism is arranged in the operating chamber 3, and the first conveying mechanism is used for conveying articles between the reaction chamber 1 and the wafer in-and-out chamber 5; a second conveying mechanism is arranged on the outside of the other side of the wafer in-and-out chamber 5, and the second conveying mechanism is used for conveying or taking articles into or out of the wafer in-and-out chamber 5.

[0032] In this specific embodiment, the operating chamber 3 is a rectangular structure. A first valve is provided between the first side of the operating chamber 3 and one side of the reaction chamber 1 of the vertical film forming apparatus. A fourth valve is provided between the second side of the operating chamber 3 and one side of the temporary storage chamber 10. A second valve is provided between the third side of the operating chamber 3 and one side of the wafer entry and exit chamber 5. A third valve is provided on the side of the wafer entry and exit chamber 5 away from the operating chamber 3. In a more specific embodiment, the first valve, the second valve, the third valve, and the fourth valve are all gate valves 2.

[0033] The first transport mechanism is a negative pressure transport mechanism 4, and the second transport mechanism is a normal pressure transport mechanism 6. Both the negative pressure transport mechanism 4 and the normal pressure transport mechanism 6 include a support frame for supporting a robot arm 9, through which the wafer 16 and substrate 17 are transported.

[0034] In another embodiment, a recording window 11, an observation window 12, and a detection window 13 are provided on the top of the temporary storage chamber 10. A lighting lamp 23 is provided above the observation window 12. A video recording device 20 is provided above the recording window 11. A detection sensor 21 is provided above the detection window 13.

[0035] A photoelectric switch 15 is provided at the first valve, and the photoelectric switch 15 is used to monitor the state of the first valve.

[0036] A viewing window 14 is provided on the top of the wafer entry and exit chamber 5. A detection sensor 21 is provided above the viewing window 14.

[0037] A cassette chamber 7 and an aligner 8 are provided around the second transport mechanism.

[0038] In a more specific embodiment, a wafer support block 27 is provided within the wafer loading and unloading chamber 5. A groove is formed on the top of the wafer support block 27 to support the wafer 16. A through-hole is provided on the side of the wafer support block 27 to connect with the groove. A robotic arm 9 extends into the through-hole to lift or lower the wafer 16. A wafer lifting mechanism 25 is provided within the temporary storage chamber 10. A lifting platform 24 is provided on top of the wafer lifting mechanism 25. A substrate support block 26 is provided within the temporary storage chamber 10, surrounding the wafer lifting mechanism 25. A substrate 17 and wafer 16 are placed on top of the substrate support block 26. A radiation thermometer 22 is provided at the top of the reaction chamber 1. A lifting mechanism 19 is provided at the lower portion of the reaction chamber 1. A susceptor 18 is provided around the lifting mechanism 19. The top of the susceptor 18 supports the substrate 17 and wafer 16. The lifting mechanism 19 is used to lift the substrate 17 and wafer 16. Two proximity switches 28 are provided at the bottom of the lifting mechanism 19, from top to bottom, to control the highest and lowest positions of the lifting mechanism 19.

[0039] The wafer 16 in the temporary storage chamber 10 is cooled to room temperature. The lifting platform 24 inside the temporary storage chamber 10 is used to lift the wafer 16 independently. The gate valve 2 between the operating chamber 3 and the temporary storage chamber 10 is opened. The robotic arm 9 extends into the temporary storage chamber 10. The lifting platform 24 falls back at a constant speed so that the wafer 16 contacts the quartz claws at the front of the robotic arm 9. After the robotic arm 9 returns to the operating chamber 3, the gate valve 2 is closed. The gate valve 2 between the operating chamber 3 and the wafer inlet and outlet chamber 5 is opened. The robotic arm 9 places the wafer 16 on the bracket inside the wafer inlet and outlet chamber 5. After the robotic arm 9 returns to its original position, the gate valve 2 is closed, so that the wafer inlet and outlet chamber 5 remains independent. Gas filling is carried out until the pressure inside the wafer inlet and outlet chamber 5 reaches atmospheric pressure. The other chambers still maintain their original negative pressure environment. The valve between the negative pressure area and the normal pressure area is opened, and the normal pressure transport mechanism 6 is used to transport the wafer 16 to the normal pressure area. The robotic arm 9 then transports it to the box chamber 7 for storage. The wafer 16 to be film-formed is taken out from the box chamber 7, and after the orientation of the wafer is adjusted by the calibrator 8, it is transported to the wafer inlet and outlet chamber 5 along the opposite path. After closing the valve, the interior of the wafer inlet and outlet chamber 5 is evacuated to a vacuum state, and argon gas is introduced for air replacement. After the replacement is completed, the pressure in the chamber is the same as that in the operation chamber 3, and the connected gate valve 2 is opened. The robot arm 9 moves the wafer 16 to the operation chamber 3, closes the connected gate valve 2 and opens the gate valve 2 on the side of the temporary storage chamber 10, and the robot arm 9 extends into the temporary storage chamber 10. The lifting platform 24 is lifted to separate the wafer from the quartz claw. After the robot arm 9 is retracted, the lifting platform 24 falls back to complete the loading process of the wafer to be film-formed and the substrate 17.

[0040] The photoelectric switches 15 installed outside the temporary storage chamber 10 and the wafer in-and-out chamber 5 monitor whether the wafer 16 is placed in place during the transportation process.

[0041] Example 2:

[0042] like Figure 4As shown, this embodiment is an improved embodiment based on the first embodiment. In this embodiment, the operation chamber 3 adopts an octagonal structure. The first side of the operation chamber 3 is provided with a normal pressure transfer mechanism 6, a cassette chamber 7, a calibrator 8, and a robotic arm 9. The two side surfaces adjacent to the first side of the operation chamber 3 are respectively provided with a wafer entry and exit chamber 5. The side of the operation chamber 3 adjacent to the wafer entry and exit chamber 5 is provided with a temporary storage chamber 10, and the side of the operation chamber 3 adjacent to the temporary storage chamber 10 is provided with a reaction chamber 1. Gate valves 2 are provided between the reaction chamber 1 and the operation chamber 3, between the temporary storage chamber 10 and the operation chamber 3, and between the wafer entry and exit chamber 5 and the operation chamber 3.

[0043] When multiple reaction chambers are being prepared simultaneously, the number of temporary storage chambers 10 and wafer loading and unloading chambers 5 required is increased and aligned with the number of reaction chambers 1. That is, substrates 17 and wafers 16 after film formation in a reaction chamber 1 are transported sequentially through their corresponding chambers. The handling system's operating chamber 3 and robotic arm 9 are shared by all reaction chambers 1. Under normal circumstances, wafers 16 in multiple reaction chambers 1 are first cooled to handling temperature before being handled. Afterwards, wafers are transported sequentially. When multiple reaction chambers 1 meet handling temperature simultaneously, wafers are transported sequentially according to the reaction chamber number.

[0044] It should be noted that it is obvious to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, from all perspectives, the embodiments should be regarded as illustrative and non-restrictive, and the scope of the present invention is defined by the appended claims rather than the foregoing description. It is intended that all changes that fall within the meaning and range of equivalents of the claims be included in the present invention, and any reference signs in the claims should not be construed as limiting the claims to which they relate.

[0045] This specification uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only intended to help understand the method and core concept of the present invention. At the same time, those skilled in the art will find that the specific implementation methods and application scopes may vary based on the concept of the present invention. In summary, the contents of this specification should not be construed as limiting the present invention.

Claims

1. A substrate transfer device for a vertical film forming device, characterized in that: It comprises an operation chamber and a wafer entry and exit chamber; a first valve is provided between one side of the operation chamber and one side of the reaction chamber of the vertical film forming device; a second valve is provided between the other side of the operation chamber and one side of the wafer entry and exit chamber; a third valve is provided on the other side of the wafer entry and exit chamber; a first transport mechanism is provided in the operation chamber, the first transport mechanism being used for transporting articles between the reaction chamber and the wafer entry and exit chamber; a second transport mechanism is provided on the outside of the other side of the wafer entry and exit chamber, the second transport mechanism being used for transporting or taking articles into or out of the wafer entry and exit chamber; The system further includes a temporary storage chamber; a fourth valve is provided between one side of the temporary storage chamber and the operation chamber; the first transport mechanism is used for transporting items between the reaction chamber, the wafer entry and exit chamber, and the temporary storage chamber; the temporary storage chamber is used to cool the wafers in the temporary storage chamber to room temperature; The temporary storage chamber is provided with a wafer lifting mechanism, a lifting platform is provided on the top of the wafer lifting mechanism, a substrate support block is provided in the temporary storage chamber around the wafer lifting mechanism, a substrate and a wafer are provided on the top of the substrate support block, and the lifting platform of the lifting mechanism is used to lift the substrate and the wafer; the robotic arm of the first transport mechanism is capable of transporting the wafer and the substrate; the robotic arm extends into the temporary storage chamber, and the lifting platform falls back at a uniform speed so that the wafer contacts the quartz claw at the front end of the robotic arm; The first conveying mechanism is a negative pressure conveying mechanism, and the temporary storage chamber is arranged outside the negative pressure conveying mechanism.

2. The substrate transfer equipment of the vertical film forming apparatus according to claim 1, characterized in that: A recording window and / or an observation window and / or a detection window is provided on the top of the temporary storage chamber.

3. The substrate transfer equipment of the vertical film forming apparatus according to claim 2, characterized in that: An illuminating lamp is arranged above the observation window.

4. The substrate transfer equipment of the vertical film forming apparatus according to claim 2, characterized in that: A video recording device is arranged above the recording window.

5. The substrate transfer equipment of the vertical film forming apparatus according to claim 1, characterized in that: A photoelectric switch is provided at the first valve, and the photoelectric switch is used to monitor the state of the first valve.

6. The substrate transfer equipment of the vertical film forming apparatus according to claim 1, characterized in that: The first transport mechanism and the second transport mechanism both include robotic arms.

7. The substrate transfer equipment of the vertical film forming apparatus according to claim 1, characterized in that: A window is provided on the top of the wafer entry and exit chamber.

8. The substrate transfer equipment of the vertical film forming apparatus according to claim 7, characterized in that: A detection sensor is arranged above the viewing window.

9. The substrate transfer equipment of the vertical film forming apparatus according to claim 1, characterized in that: A cassette chamber and a calibrator are arranged around the second transport mechanism.

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