Driving backplane and display panel

Abstract

Embodiments of the present application provide a kind of drive backboard and display panel, the drive backboard includes functional layer and is located on the functional layer on bonding contact layer.The bonding contact layer includes bonding area and non-bonding area;At least one the reflectivity of the bonding area to laser is greater than the reflectivity of the non-bonding area to laser.By the reflectivity of the bonding area on the drive backboard to laser is set to be greater than the reflectivity of the non-bonding area to laser, reduce the absorption degree of the bonding area to laser irradiation energy.So, when receiving laser cleaning uniformly, the risk that the bonding area is damaged due to the thickness of the bonding connection material corresponding to the bonding area and non-bonding area is different and the bonding area bears too much laser irradiation energy can be reduced.

Description

Technical Field

[0001] This application relates to the field of display device manufacturing, and more specifically, to a driving backplane and a display panel. Background Technology

[0002] With the development of display device manufacturing technology, Mini LEDs and Micro-LEDs are widely used due to their superior advantages in brightness, resolution, contrast, energy consumption, lifespan, response speed and thermal stability.

[0003] Mini LED and Micro-LED panel technologies involve mass-transferring numerous tiny LED light-emitting units onto a driver backplane to form a display panel. During the manufacturing process of such panels, if any faulty light-emitting units are detected, these units need to be removed. The bonding material on the driver backplane used to bond the faulty units is then cleaned, and the bonding material is replaced before new light-emitting units are bonded. Laser cleaning technology is typically used to clean the bonding material. Laser cleaning involves irradiating the surface of the object being cleaned with a high-energy-density laser beam. Through vibration, decomposition, and vaporization effects, contaminants on the surface of the object are removed, achieving a cleaning effect.

[0004] However, the thickness of the bonding material at the location where the faulty light-emitting unit is located on the drive backplate is different from the thickness of the bonding material at the location where no light-emitting unit is located. This results in different laser irradiation energy being received by the area corresponding to the bonding area and the area not corresponding to the bonding area on the drive backplate during the laser cleaning process. Under the condition of uniform laser cleaning, the bonding area may be damaged by excessive laser irradiation energy. Summary of the Invention

[0005] To overcome the technical problems mentioned in the above background, embodiments of this application provide a drive backplane, including:

[0006] Functional layer and bonding contact layer located on said functional layer;

[0007] The bonding contact layer includes a bonding area and a non-bonding area; at least one of the bonding areas has a higher reflectivity to laser light than the non-bonding area.

[0008] In some possible implementations, the surface roughness of the bonding region on the side away from the functional layer is less than the surface roughness of the non-bonding region on the side away from the functional layer.

[0009] In some possible implementations, the surface flatness of the bonding region is greater than that of the non-bonding region.

[0010] In some possible implementations, the material of the bonding region includes at least one of aluminum, copper, aluminum alloy, copper alloy, and titanium-aluminum-titanium composite, and the material of the non-bonding region includes at least one of iron, cobalt, nickel, and indium tin oxide.

[0011] In some possible implementations, the bonding region includes a first material layer and a second material layer covering the side of the first material layer away from the functional layer, wherein the reflectivity of the second material layer to laser light is greater than that of the first material layer to laser light.

[0012] In some possible implementations, a bonding material located on the side of the bonding region away from the functional layer is also included, wherein the ablation threshold of the bonding region and / or the non-bonding region is greater than the ablation threshold of the bonding material.

[0013] In some possible implementations, the bonding material includes at least one of anisotropic conductive film, nanoporous carbon powder, non-conductive film, indium, tin, or silver.

[0014] In some possible implementations, the ablation threshold of the bonded region is greater than the ablation threshold of the unbonded region.

[0015] This application also provides a display panel including a plurality of light-emitting units and the driving backplate provided in this application, wherein the electrodes of the light-emitting units are electrically connected to the bonding area.

[0016] In some possible implementations, the light-emitting unit includes a miniature light-emitting diode or a micro-light-emitting diode.

[0017] This application provides a driving backplane and display panel. By setting the reflectivity of the bonding area on the driving backplane to be greater than that of the non-bonding area, the absorption of laser irradiation energy by the bonding area is reduced. Thus, during laser cleaning, the risk of damage to the bonding area due to excessive laser irradiation energy caused by the difference in thickness of the bonding materials corresponding to the bonding areas and non-bonding areas can be reduced. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1A A schematic diagram showing the bonding state of the light-emitting unit;

[0020] Figure 1BThis is a schematic diagram showing the state of the bonding material after the light-emitting unit has been removed.

[0021] Figure 2 One of the schematic diagrams of the drive backplane provided in the embodiments of this application;

[0022] Figure 3 A second schematic diagram of the drive backplane provided in an embodiment of this application;

[0023] Figure 4 This is the third schematic diagram of the drive backplane provided in the embodiments of this application. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0026] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0027] In the description of this application, it should be noted that the terms "upper," "lower," etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. In addition, the terms "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0028] It should be noted that, where there is no conflict, different features in the embodiments of this application can be combined with each other.

[0029] Please see Figure 1AIn Mini LED and Micro-LED display panels, LED light-emitting units 300 are typically bonded to bonding areas 120 on the functional layer using bonding bonding material 200. For example, anisotropic conductive film (ACF) is used to bond the light-emitting unit 300 to the bonding area 120 of the driving backplane using a bonding method.

[0030] Please refer to Figure 1B After removing the faulty light-emitting unit 300, the thickness of the bonding material 200 corresponding to the bonding area 120 is different from the thickness of the bonding material 200 corresponding to the non-bonding area 130. During laser cleaning, because the bonding material 200 corresponding to the bonding area 120 is thinner, its blocking effect on the laser is less, causing the bonding area 120 to withstand more laser irradiation energy compared to the non-bonding area 130. This results in a risk of the bonding area 120 being ablated and damaged.

[0031] In view of this, this embodiment provides a solution that can reduce the damage to the bonding area during laser cleaning. The solution provided in this embodiment will be explained in detail below.

[0032] Please refer to Figure 2 This embodiment provides a drive backplane, which includes a functional layer 110 and a bonding contact layer located on the functional layer 110.

[0033] The functional layer 110 may include an array formed by multiple driving units, such as a thin film transistor (TFT) array.

[0034] The bonding contact layer includes a bonding area 120 and a non-bonding area 130. The bonding area 120 can be an area that needs to be electrically connected to the light-emitting unit, such as a pad. The bonding area 120 can be electrically connected to the driving unit, and the driving unit can provide electrical power to the light-emitting unit through the bonding area 120 under controlled conditions to drive the light-emitting unit to emit light. The non-bonding area 130 can be an area that does not need to be electrically connected to the light-emitting unit, preferably an exposed trace portion.

[0035] In this embodiment, at least one of the bonding regions 120 has a higher reflectivity to laser light than the non-bonding region 130. Thus, even if the thickness of the bonding material 200 at the bonding region decreases after the bonding light-emitting unit is removed, the bonding region 120 can reflect more laser light, reducing the absorption of laser irradiation energy. Therefore, when uniformly subjected to laser cleaning, the risk of the bonding region 120 being ablated and damaged due to excessive laser irradiation energy caused by the difference in thickness between the bonding material 200 corresponding to the bonding regions 120 and 130 can be reduced.

[0036] In one possible implementation, the surface roughness of the bonding region 120 on the side away from the functional layer 110 is less than the surface roughness of the non-bonding region 130 on the side away from the functional layer 110. The smaller surface roughness of the bonding region 120 results in a relatively higher reflectivity, while the larger surface roughness of the non-bonding region 130 results in a relatively lower reflectivity.

[0037] For example, when forming the bonding region 120 and the non-bonding region 130 by physical vapor deposition (PVD), the metal film of the bonding region 120 can be made denser by optimizing the PVD process, thereby improving the reflectivity of the bonding region 120. As another example, after forming the bonding region 120 and the non-bonding region 130, the surfaces of the bonding region 120 or the non-bonding region 130 can be treated chemically to reduce the surface roughness of the bonding region 120 or increase the surface roughness of the non-bonding region 130.

[0038] In another possible implementation, the bonding region 120 and the non-bonding region 130 can be made of different materials, wherein the bonding region 120 is made of a material with high reflectivity and the non-bonding region 130 is made of a material with low reflectivity. For example, the material of the bonding region 120 includes at least one of aluminum, copper, aluminum alloy, copper alloy, and titanium-aluminum-titanium composite, and the material of the non-bonding region 130 includes at least one of iron, cobalt, nickel, and indium tin oxide.

[0039] In another possible implementation, the bonding region 120 includes a first material layer and a second material layer covering the first material layer on the side away from the functional layer 110, wherein the second material layer has a higher reflectivity to laser light than the first material layer. For example, after uniformly forming the bonding region 120 and the non-bonding region 130, a second material layer with higher reflectivity metal particles is formed over the bonding region 120, thereby making the reflectivity of the bonding region 120 higher than that of the non-bonding region 130.

[0040] In another possible implementation, please refer to Figure 3 The surface of the bonding region 120 protrudes in a direction away from the functional layer 110. Thus, the bonding region 120 can increase the heat dissipation range of the laser when reflecting it, thereby increasing the heat dissipation area.

[0041] In one possible implementation, please refer to Figure 4 The drive backplane may further include a bonding connection material 200 located on the side of the bonding region 120 away from the functional layer 110, wherein the ablation threshold of the bonding region 120 and / or the non-bonding region 130 is greater than the ablation threshold of the bonding connection material 200. For example, the bonding connection material 200 includes at least one of anisotropic conductive film (ACF), nanoporous carbon powder (NCP), non-conductive adhesive film (NCF), indium (In), tin (Sn), or silver (Ag). Preferably, the bonding connection material 200 may be anisotropic conductive film. Thus, when removing the bonding material 200 by laser irradiation, the heat generated by the laser irradiation is controlled to be higher than the ablation threshold of the bonding material 200, but lower than the ablation threshold of the bonding area 120 and / or the unbonded area 130, thereby reducing the risk of the bonding area 120 and the unbonded area 130 being burned.

[0042] In some possible implementations, the ablation threshold of the bonding region 120 is greater than the ablation threshold of the non-bonding region 130.

[0043] In some possible implementations, the functional layer 110 may include a substrate layer, a buffer layer, and a pixel driving layer.

[0044] The substrate layer can be a glass substrate, the buffer layer is located on one side of the substrate layer, and the pixel driving layer is located on the side of the buffer layer away from the substrate layer. In this embodiment, the buffer layer can be formed from inorganic materials, such as silicon oxide, silicon nitride, and silicon oxynitride. In this embodiment, the buffer layer can be a two-layer structure consisting of a silicon nitride (SiNx) layer and a silicon oxide (SiOx) layer sequentially formed on the substrate layer.

[0045] The pixel driving layer may include an active layer, a gate insulating layer, a gate, a source, a drain, a first insulating layer, and a second insulating layer.

[0046] The active layer is formed on the buffer layer. The active layer may be formed of inorganic semiconductor (e.g., amorphous silicon or polycrystalline silicon), organic semiconductor or oxide semiconductor. The active layer may include a source region (S), a drain region (D) and a channel region (p-si).

[0047] The gate insulating layer is formed on the active layer and the buffer layer not covered by the active layer, so as to isolate the active layer and the gate insulating layer. The gate insulating layer may be made of materials such as silicon oxide or silicon nitride, but is not limited thereto.

[0048] The gate is formed on the side of the gate insulating layer opposite to the substrate layer corresponding to the active layer, and the gate can be formed using one or more of metals such as Al, Mo, Cu, Ti or other low resistivity metal materials.

[0049] The first insulating layer is formed on the gate insulating layer and covers the gate. The first insulating layer can also be formed of inorganic materials, such as silicon nitride and silicon oxide.

[0050] The second insulating layer is formed on the first insulating layer to isolate the source and the drain, thereby insulating them from each other. The second insulating layer can also be formed of inorganic materials (such as silicon nitride and silicon oxide). The structure of the second insulating layer can be a two-layer or three-layer structure formed of silicon nitride and silicon oxide.

[0051] The source and drain are formed on the second insulating layer. The source is electrically connected to the source region (S) in the active layer through a via, and the drain is electrically connected to the drain region (D) in the active layer through a via. The electrode materials of the gate, the source, and the drain can all be one or more of metals such as Al, Mo, Cu, Ti, or other low-resistivity metals. The source and drain are located in a third metal layer M3 fabricated on the second insulating layer.

[0052] The driving unit includes a TFT (Thin Film Transistor) formed from the gate, the source, the drain, and the active layer.

[0053] This application also provides a display panel, which includes a plurality of light-emitting units and the driving backplate provided in this embodiment. The electrodes of the light-emitting units are electrically connected to the bonding area 120. The light-emitting units can be fixed to the driving backplate by bonding connection material 200.

[0054] In some possible implementations, the light-emitting unit includes a miniature light-emitting diode or a micro-light-emitting diode. Specifically, in this embodiment, the bonding areas 120 on the driving backplane are arranged in an array, and the multiple light-emitting units bonded to the driving backplane are also arranged in an array. The driving unit in the driving backplane can provide power to the corresponding light-emitting unit through the bonding areas 120 under controlled conditions, thereby driving the light-emitting unit to emit light.

[0055] This application provides a driving backplane and display panel. By setting the reflectivity of the bonding area on the driving backplane to be greater than that of the non-bonding area, the absorption of laser irradiation energy by the bonding area is reduced. Thus, during laser cleaning, the risk of damage to the bonding area due to excessive laser irradiation energy caused by the difference in thickness of the bonding materials corresponding to the bonding areas and non-bonding areas can be reduced.

[0056] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0057] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A drive backplane, characterized in that, include: Functional layer and bonding contact layer located on said functional layer; The bonding contact layer includes a bonding area and a non-bonding area; at least one of the bonding areas has a higher reflectivity to laser than the non-bonding area. The drive backplane also includes a bonding material located on the side of the bonding area away from the functional layer, wherein the thickness of the bonding material corresponding to the bonding area is less than the thickness of the bonding material corresponding to the non-bonding area.

2. The drive backplane according to claim 1, characterized in that, The surface roughness of the bonding region on the side away from the functional layer is less than the surface roughness of the non-bonding region on the side away from the functional layer.

3. The drive backplane according to claim 1, characterized in that, The bonding region is made of at least one of aluminum, copper, aluminum alloy, copper alloy, and titanium-aluminum-titanium composite material, and the non-bonding region is made of at least one of iron, cobalt, nickel, and indium tin oxide.

4. The drive backplane according to claim 1, characterized in that, The bonding region includes a first material layer and a second material layer covering the side of the first material layer away from the functional layer, wherein the reflectivity of the second material layer to laser light is greater than that of the first material layer to laser light.

5. The drive backplane according to claim 1, characterized in that, The surface of the bonding region protrudes in a direction away from the functional layer.

6. The drive backplane according to claim 1, characterized in that, The ablation threshold of the bonded area and / or the non-bonded area is greater than the ablation threshold of the bonded bonding material.

7. The drive backplane according to claim 6, characterized in that, The bonding material includes at least one of anisotropic conductive film, nanoporous carbon powder, non-conductive film, indium, tin, or silver.

8. The drive backplane according to claim 1, characterized in that, The ablation threshold of the bonded area is greater than the ablation threshold of the unbonded area.

9. A display panel, characterized in that, It includes multiple light-emitting units and a driving backplate as described in any one of claims 1-8, wherein the electrodes of the light-emitting units are electrically connected to the bonding area.

10. The display panel according to claim 9, characterized in that, The light-emitting unit includes a mini light-emitting diode or a micro light-emitting diode.

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