雾化器、汽化器、半导体工艺设备及方法

Abstract

This invention relates to the field of semiconductor technology, and more particularly to an atomizer, a vaporizer, semiconductor process equipment, and a method. The atomizer includes a nozzle and a carrier gas chamber. The carrier gas chamber provides a carrier gas, and the nozzle provides a sprayed liquid. The liquid outlet of the nozzle is located near and connected to the atomization outlet of the atomizer. The gas outlet of the carrier gas chamber is located near and connected to the atomization outlet, and the airflow cross-sectional area of ​​the gas outlet within the carrier gas chamber is minimized. The airflow cross-sectional area of ​​the atomization outlet is in the range of 0.000000045m². 2 ~0.0000001m 2 The vaporizer includes an atomizer, and the semiconductor process equipment includes a vaporizer; the atomizer, vaporizer, semiconductor process equipment, and method provided in the embodiments of the present invention can basically achieve curing while minimizing surface pore defects in the film layer.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to an atomizer, a vaporizer, semiconductor process equipment and methods. Background Technology

[0002] As chip integration increases, traditional processes (such as PECVD and HDP) suffer from drawbacks in the formation of the insulating layer for transistor STI (Shallow Trench Isolation), including poor embedding characteristics in deep bottom corners, making them unsuitable for high aspect ratio processes. To address these requirements, perhydro-polysilanzane (molecular formula -(SiH2NH)n) is used for spin coating. The spin-coating solution fully penetrates the etching tank, followed by a vertical furnace spin-on dielectric (SOD) annealing process. This involves maintaining a low pressure (e.g., 200 Torr to 500 Torr) in the chamber while introducing steam to hydrolyze the perhydro-polysilanzane, producing the intermediate SiOH along with H2 and NH3. Si-OH then condenses to produce SiO2. This process involves a dehydrocoupling reaction at high temperatures. Hydrolysis also produces H2. Although this process produces insulating dielectric with better filling properties and is more advantageous in high aspect ratio STI applications, in order to ensure complete hydrolysis, a large amount (or even an excessive amount) of hydrogen gas is generated by the reaction of sufficient (or even excessive) water vapor, forming a hydrogen-rich environment. Hydrogen gas in the hydrogen-rich environment will escape from the membrane layer, resulting in void defects inside the membrane layer and increasing defects on the surface of the membrane layer. In other words, hydrogen richness leads to membrane quality deterioration, which will indirectly increase the risk that the membrane layer's compactness cannot meet the standard. Summary of the Invention

[0003] The purpose of this invention is to provide an atomizer, vaporizer, semiconductor process equipment and method to solve the technical problem of pore defects on the surface of the film layer in the silicon oxide preparation process in the prior art.

[0004] The atomizer provided in this embodiment of the invention includes a nozzle and a carrier gas chamber, wherein the carrier gas chamber is used to provide carrier gas and the nozzle is used to provide sprayed liquid;

[0005] The nozzle's liquid outlet is close to and connected to the atomization outlet of the atomizer;

[0006] The air outlet of the carrier gas chamber is close to and connected to the atomization outlet, and the airflow cross-sectional area of ​​the air outlet in the carrier gas chamber is the smallest.

[0007] The airflow cross-sectional area of ​​the atomizing outlet is 0.000000045m². 2 ~0.0000001m 2 .

[0008] Optionally, the airflow cross-sectional area of ​​the atomizing outlet is in the range of 0.000000045m². 2 ~0.00000009m 2 .

[0009] Optionally, the carrier gas chamber is disposed around the nozzle;

[0010] The gap between the outer wall of the carrier gas chamber and the outer wall of the nozzle forms the outlet of the carrier gas chamber.

[0011] Optionally, the cross-sectional area of ​​the airflow within the carrier gas chamber gradually decreases along its airflow direction.

[0012] Optionally, the nozzle is made of a heat-insulating resin material.

[0013] Optionally, the nozzle has a mounting hole communicating with the liquid outlet, and a capillary tube is fixed in the mounting hole, the inner diameter of the capillary tube being larger than the inner diameter of the nozzle.

[0014] Optionally, it may also include a heat insulation sleeve, which is made of heat insulation material;

[0015] The mounting hole, the heat insulation sleeve, and the capillary tube are sequentially fitted from the outside to the inside radially and are coaxial.

[0016] Optionally, the carrier gas flow rate at the atomization outlet is in the range of 4.5 SLM to 10 SLM;

[0017] And / or, the liquid flow rate at the atomization outlet is less than 20 g / min.

[0018] The atomizer provided by this invention has the following beneficial effects:

[0019] When using the atomizer provided in this embodiment, liquid (e.g., liquid water) is sprayed from the nozzle to a position near the atomization outlet. Carrier gas (e.g., oxygen) is supplied from a gas source through the inlet of the carrier gas chamber and discharged from the outlet of the carrier gas chamber to a position near the atomization outlet. Since the airflow cross-sectional area at the outlet is the smallest in the carrier gas chamber, the airflow velocity at that outlet is the greatest. Simultaneously, because both the nozzle and the outlet of the carrier gas chamber are close to and connected to the atomization outlet, the high-speed carrier gas flow and the liquid converge near the atomization outlet, rapidly atomizing the liquid sprayed from the nozzle. The airflow cross-sectional area at the atomization outlet is only 0.000000045 m². 2 ~0.0000001m2 The airflow cross-sectional area is relatively small. During the process, under the premise of a constant airflow velocity at this cross-section, the lower limit of the carrier gas usage can be reduced. Furthermore, while ensuring an appropriate ratio of liquid to carrier gas, the usage of both carrier gas and liquid is reduced. That is, less carrier gas and liquid are needed to achieve the same atomization effect. This reduces the amount of liquid vapor (such as water vapor), effectively controls the amount of liquid vapor, and reduces or even avoids excessive liquid vapor. Taking the preparation of silicon oxide using liquid water and SOD as an example, the atomizer provided in this embodiment can reduce the amount of water vapor, reducing or even avoiding excessive water vapor, thereby reducing or even avoiding the generation of excessive hydrogen, reducing or even avoiding the formation of a hydrogen-rich environment, and further reducing or even avoiding hydrogen escape from the membrane surface, reducing or even avoiding the generation of internal pore defects in the membrane, resulting in a high-quality membrane and ensuring membrane density as much as possible.

[0020] This invention also provides a vaporizer, including a first vaporization chamber and the aforementioned atomizer, wherein the atomization outlet of the atomizer is connected to the vaporization inlet of the first vaporization chamber.

[0021] Optionally, the side wall of the first vaporization chamber is provided with a first heating component.

[0022] Optionally, the first heating component is disposed around the entire sidewall of the first vaporization chamber.

[0023] Optionally, a second heating component is provided inside the first vaporization chamber, and the second heating component is located near the vaporization outlet of the first vaporization chamber.

[0024] Optionally, the vaporization outlet of the first vaporization chamber is connected to a second vaporization chamber, and a filter is provided between the inlet and outlet of the second vaporization chamber.

[0025] Optionally, the filter section is made of a filter resin with thermal conductivity; or, the filter section is provided with a third heating component.

[0026] The vaporizer provided by this invention has the following beneficial effects:

[0027] Since the vaporizer provided in this embodiment of the invention includes the atomizer described above, it has the beneficial effects of the atomizer described above, which will not be repeated here.

[0028] This invention also provides a semiconductor process apparatus, including a reaction chamber and the vaporizer described above communicating with the reaction chamber.

[0029] Optionally, the inlet side of the vaporizer is connected to a gas supply path and a liquid supply path;

[0030] Along the airflow direction, the air supply path is sequentially equipped with a carrier gas pressure gauge, a carrier gas flow controller, a carrier gas filter, and a heat exchanger;

[0031] The liquid supply path is equipped with a liquid pressure gauge and a liquid flow controller;

[0032] Along the airflow direction, the outlet side of the vaporizer is sequentially connected to a vaporization filter and a reaction chamber.

[0033] The semiconductor process equipment provided by this invention has the following beneficial effects:

[0034] Since the semiconductor process equipment provided in this embodiment of the invention includes the vaporizer described above, it has the same beneficial effects as the vaporizer described above, and will not be described again here.

[0035] This invention also provides a semiconductor processing method applied to the aforementioned semiconductor processing equipment to prepare a semiconductor film layer; the method includes:

[0036] The liquid is controlled to flow sequentially through the liquid pressure gauge and the liquid flow controller, and then discharged into the vaporizer; wherein the liquid flow rate is less than 20 g / min.

[0037] The carrier gas is controlled to flow sequentially through a carrier gas pressure gauge, a carrier gas flow controller, a carrier gas filter, and a heat exchanger before being discharged into the vaporizer; wherein the carrier gas flow rate ranges from 4.5 SLM to 10 SLM.

[0038] The vaporization products after vaporization by the vaporizer are controlled to flow through the vaporization filter and discharged into the reaction chamber.

[0039] Since the semiconductor process method provided in this embodiment of the invention uses the above-described semiconductor process equipment to prepare semiconductor films, it has the same beneficial effects as the above-described semiconductor process equipment, and will not be described again here. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0041] Figure 1 This is a schematic diagram of the vaporizer in an embodiment of the present invention;

[0042] Figure 2 This is a top view of the vaporization chamber in an embodiment of the present invention;

[0043] Figure 3This is a schematic diagram of a vaporization chamber and vaporization within it, as described in an embodiment of the present invention.

[0044] Figure 4 This is a schematic diagram of another vaporization chamber in an embodiment of the present invention;

[0045] Figure 5 This is a schematic diagram of another vaporization chamber in an embodiment of the present invention;

[0046] Figure 6 This is a schematic diagram of the semiconductor process equipment for preparing silicon oxide in an embodiment of the present invention;

[0047] Figure 7 This is a schematic diagram of the chain or cyclic structure of all-hydrogen polysilazane in an embodiment of the invention;

[0048] Figure 8 This is a schematic diagram of the structure formed by multiple Si-N crosslinks of a fully hydrogenated polysilazane in an embodiment of the present invention;

[0049] Figure 9 A schematic diagram of an existing process recipe is provided, wherein the cross-sectional area of ​​the airflow at the atomization outlet is in the range of 0.00000015m². 2 ~0.0000002m 2 ;

[0050] Figure 10 This is a schematic diagram of a process recipe setup in an embodiment of the present invention, wherein the cross-sectional area of ​​the airflow at the atomization outlet ranges from 0.000000045m². 2 ~0.0000001m 2 ;

[0051] Figure 11 This is a schematic diagram of the infrared absorption intensity of the all-hydrogen polysilazane FTIR test results before curing, as shown in this embodiment of the invention.

[0052] Figure 12 This is a schematic diagram of the FTIR test results—infrared absorption intensity—of the cured all-hydrogen polysilazane in an embodiment of the present invention.

[0053] Explanation of reference numerals in the attached figures:

[0054] 10-Vaporizer; 20-Liquid pressure gauge; 30-Liquid flow controller; 40-Carrier gas pressure gauge;

[0055] 50 - Carrier gas flow controller; 60 - Carrier gas filter; 70 - Heat exchanger;

[0056] 80 - Vaporization filter; 90 - Reaction chamber;

[0057] 100-Atomizer;

[0058] 110 - Carrier gas chamber; 111 - Gas outlet;

[0059] 120 - Nozzle; 121 - Mounting hole;

[0060] 130 - Atomization outlet;

[0061] 140 - Insulation sleeve;

[0062] 150-capillary;

[0063] 200 - First vaporization chamber;

[0064] 201 - Vaporization inlet; 202 - Vaporization outlet;

[0065] 210 - First heating element; 220 - Second heating element;

[0066] 300 - Second vaporization chamber; 310 - Filtration section;

[0067] 400-Vaporization Chamber. Detailed Implementation

[0068] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0069] The present invention will now be described in further detail with reference to specific embodiments and accompanying drawings.

[0070] To address the issue of hydrogen-rich membrane degradation in existing technologies, oxygen is introduced simultaneously during the SOD Anneal process. Oxygen suppresses the amount of hydrogen generated, reducing or even eliminating the aforementioned problem, and it also reacts with silazane to form partial silicon oxide. However, in low-pressure reactions, the reaction rate and extent of water with polysilazane are greater than those of oxygen with polysilazane. Excessive oxygen leads to a decrease in the partial pressure of water, resulting in insufficient curing, particularly in high aspect ratio buried layers, and abnormal membrane thickness. Therefore, maintaining an appropriate water / oxygen partial pressure ratio is crucial. If the oxygen level is increased significantly, the water level also needs to be increased significantly to maintain this ratio. In this case, to maintain low pressure, the opening of the vertical furnace exhaust pneumatic valve (e.g., VEC valve) needs to be adjusted to maintain the chamber gas volume and low-pressure environment. This increases the probability of water replenishing and contacting the membrane surface during gas-phase diffusion, leading to the continued occurrence of the membrane porosity defects described above.

[0071] In another related technology of this invention embodiment, in order to maintain the vaporization rate, the airflow cross-sectional area of ​​the vaporizer's atomization outlet is designed to be 0.00000015m². 2 ~0.0000002m 2 If a carrier gas volume exceeding 15 SLM is used, the theoretical flow rate per orifice will exceed (carrier gas volume (m³)). 3 / s) / Carrier pore area (m²) 2 The vapor pressure at the vaporizer outlet, measured using this pore area, is stable at 1666 m / s. However, based on the material properties of the all-hydrogen polysilazane and the aspect ratio of industrial integrated circuit designs, when using oxygen exceeding 15 SLM as the carrier gas, at least 30 g / min of liquid water is required to ensure a suitable partial pressure ratio and achieve high depth and width curing of the full-film polysilazane. However, due to the limitations of the vaporizer's heating capacity and atomization outlet area, the vaporization capacity of the vaporizer is only within 20 g / min. To meet this vaporization capacity, the liquid water setting in the Recipe (menu) needs to be reduced. As a result, under a fixed temperature range, the partial pressure of the liquid water is insufficient, which may prevent complete curing of the full film. As integrated circuit integration continues to improve, the gate length of transistors is shrinking, and the aspect ratio of insulating dielectric trenches in advanced processes even exceeds 10:1. Insufficient liquid water will make it difficult to achieve full curing of the film. To solve this problem, simply increasing the process temperature to promote the reaction rate may cause the shallow surface of the film to be fully cured prematurely, while the gas generated by the reaction at the bottom of the film cannot escape, which may lead to insufficient curing at the middle and bottom, as well as increased leakage current and failure of reliability tests in transistors.

[0072] To further address the aforementioned problems, embodiments of the present invention provide an atomizer, a vaporizer, a semiconductor process equipment, and a method. The main inventive concept is as follows:

[0073] In the vaporizer 10 structure of this invention, the atomization outlet of the atomizer 100 is greatly reduced, for example, to 0.000000045m. 2 ~0.0000001m 2This reduces the lower limit of carrier gas usage, for example, from 15-20 SLM to 4.5-10 SLM. This setting reduces the partial pressure / usage of liquid water. With this structure, the carrier gas usage is reduced to a minimum of 4.5-10 SLM, requiring only 9-20 g / min of liquid water. This amount of liquid water can maintain the vaporization rate under conditions of carrier gas blowing at the atomization outlet of the atomization chamber, thermal radiation, and sidewall heating, thus reducing or even eliminating the problem of water accumulation inside the vaporizer 10. Experimental tests have proven that, using the atomizer 100, vaporizer 10, semiconductor process equipment, and method provided in this invention, during the spin-coating process, when all-hydrogen polysilazane is spin-coated onto a silicon wafer, the absorption intensity values ​​of Si-N, Si-H, and NH disappear in the FTIR (infrared spectroscopy) test after Annealing, and obvious Si-O stretching, bending, and rocking vibration peaks appear. These test results indicate that this invention, while avoiding film quality problems (such as surface pores), ensures the film layer is cured and converted into silicon oxide, enabling domestically produced SOD Anneal vertical furnace equipment to meet the basic conditions for curing STI insulating layers on 12-inch integrated circuits. The implementation of this invention will be further illustrated below through specific embodiments.

[0074] like Figure 1 As shown, the atomizer 100 provided in this embodiment of the invention includes a nozzle 120 and a carrier gas chamber 110. The carrier gas chamber 110 is used to provide carrier gas, and the nozzle 120 is used to provide sprayed liquid. The liquid outlet of the nozzle 120 is close to and connected to the atomization outlet 130 of the atomizer 100. The air outlet 111 of the carrier gas chamber 110 is close to and connected to the atomization outlet 130. The airflow cross-sectional area of ​​the air outlet 111 in the carrier gas chamber 110 is the smallest. The airflow cross-sectional area of ​​the atomization outlet 130 is in the range of 0.000000045m². 2 ~0.0000001m 2 The atomizer 100 is configured such that the carrier gas in the carrier gas chamber 110 is discharged to the outlet 111 to generate a high-speed airflow, the high-speed airflow merges with the liquid sprayed from the nozzle 120 and atomizes it, and then is discharged from the atomization outlet 130. In this embodiment of the invention, the atomization outlet 130 of the atomizer 100 is connected to the vaporization chamber of the vaporizer 10, that is, the atomized product after atomization by the atomizer 100 is discharged into the vaporization chamber of the vaporizer 10.

[0075] When using the atomizer 100 provided in this embodiment, during the process, liquid is sprayed from nozzle 120 to a position near atomization outlet 130. Carrier gas is supplied from a gas source through the inlet of carrier gas chamber 110 and discharged from the outlet 111 of carrier gas chamber 110 to a position near atomization outlet 130. Since the airflow cross-sectional area at outlet 111 is the smallest in the airflow cross-section within carrier gas chamber 110, the airflow velocity at outlet 111 is the largest. Simultaneously, since both nozzle 120 and the outlet 111 of carrier gas chamber 110 are close to and connected to atomization outlet 130, the high-speed carrier gas flow can quickly atomize the liquid sprayed from nozzle 120. Because the airflow cross-sectional area of ​​atomization outlet 130 ranges from 0.000000045 to 0.0000001 m², the process is more efficient. 2 The cross-sectional area of ​​the airflow is 0.00000015 to 0.0000002 m². 2 In this invention, given a constant airflow velocity at the airflow cross-section, the lower limit of carrier gas usage can be reduced. Furthermore, while maintaining an appropriate ratio of liquid to carrier gas, the amount of liquid used can be reduced. That is, less carrier gas and liquid are needed to achieve the same atomization effect, thus reducing liquid vapor (e.g., water vapor) and effectively controlling it, minimizing or even eliminating excessive liquid vapor. Taking liquid water and SOD-based silicon dioxide preparation as an example, the atomizer 100 provided in this embodiment can reduce water vapor, minimizing or even eliminating excessive liquid vapor, thereby reducing or even eliminating the generation of excessive hydrogen, minimizing or even eliminating the formation of a hydrogen-rich environment, and further minimizing or eliminating hydrogen escape from the membrane surface, minimizing or even eliminating the generation of internal pore defects in the membrane, resulting in a high-quality membrane and ensuring membrane density as much as possible.

[0076] Meanwhile, lowering the lower limit of carrier gas usage facilitates downward adjustment of the carrier gas and liquid usage during the process. Conversely, it allows for upward adjustment of the carrier gas and liquid usage, meaning that while maintaining the partial pressure ratio of carrier gas to liquid, the usage of carrier gas and liquid can be appropriately adjusted to adapt to coating curing in different industrial settings. In this embodiment of the invention, oxygen is used as an example as the carrier gas. Oxygen can suppress the generation of hydrogen during the SOD process, thereby further reducing or even avoiding the generation of a hydrogen-rich reaction environment, reducing or even avoiding hydrogen escape from the film layer, and reducing or even avoiding the generation of internal pore defects in the film layer, resulting in a high-quality film layer and further ensuring the film layer's density.

[0077] In the atomizer 100 provided in this embodiment of the invention, the airflow cross-sectional area of ​​the atomization outlet 130 can be further selected to be 0.000000045m². 2 ~0.000000095m 2 .

[0078] It should be noted that the reduction in the airflow cross-sectional area of ​​the atomizing outlet 130 of the atomizer 100 may be limited: when the airflow cross-sectional area of ​​the atomizing outlet 130 shrinks to below a certain value, such as 0.000000045m 2 In the following cases, the flow rate and pressure of the liquid and carrier gas will be limited, preventing the liquid from being atomized in time. This liquid will accumulate in the atomizer 100 and cannot be discharged, potentially causing a decrease in vaporization rate or instrument malfunction. The upper limit of the liquid flow rate is set to a certain value, such as 20 g / min, based on this consideration. Excessive liquid is difficult to atomize in time under the limited supply pressure of liquid water and oxygen gas. Therefore, in this embodiment of the invention, the airflow cross-sectional area of ​​the atomization outlet 130 is selected as 0.000000045 m². 2 ~0.0000001m 2 .

[0079] like Figure 1 As shown, in the atomizer 100 provided in this embodiment of the invention, the carrier gas chamber 110 surrounds the nozzle 120 and is located near the atomization outlet 130. The gap between the outer wall of the carrier gas chamber 110 and the outer wall of the nozzle 120 forms the air outlet 111 of the carrier gas chamber 110. The cross-sectional area of ​​the airflow along its airflow direction within the carrier gas chamber 110 gradually decreases, thereby further ensuring the stability of the airflow.

[0080] Please continue reading Figure 1 The nozzle 120 has a mounting hole 121 connected to the liquid outlet, and a capillary tube 150 is fixed inside the mounting hole 121. The inner diameter of the capillary tube 150 is larger than the inner diameter of the nozzle 120.

[0081] A heat insulation sleeve 140 is also provided, which is made of heat insulation material. The mounting hole 121, the heat insulation sleeve 140, and the capillary tube 150 are sequentially fitted radially from the outside to the inside and are coaxial. The nozzle 120 is made of heat insulation material to ensure that the temperature of the liquid water flowing through the nozzle 120 is not affected by the external environment. Similarly, the heat insulation sleeve 140 located around the capillary tube 150 can also ensure that the temperature of the liquid water flowing inside the capillary tube 150 is not affected by the external environment.

[0082] In embodiments of the present invention, such as Figure 1 As shown, the air chamber 110 is designed such that the cross-sectional area of ​​the airflow inside gradually decreases along the airflow direction. That is, the structure of the air chamber 110 is such that the cross-sectional area of ​​the airflow inside the air chamber 110 is large, and the cross-sectional area of ​​the airflow at the outlet 111 is the smallest. This setting can improve the airflow velocity and airflow stability at the outlet 111. The larger the cross-sectional area of ​​the airflow inside the air chamber 110 and the smaller the cross-sectional area of ​​the airflow at the outlet 111, the greater the airflow velocity at the outlet 111.

[0083] In the atomizer 100 provided in this embodiment of the invention, the carrier gas flow rate at the atomization outlet 130 ranges from 4.5 SLM to 10 SLM; the liquid flow rate at the atomization outlet 130 ranges from less than 20 g / min. This setting ensures efficient atomization of the liquid at the atomization outlet 130.

[0084] This invention also provides a vaporizer 10, such as... Figure 1 As shown, the vaporizer 10 includes a first vaporization chamber 200 and the aforementioned atomizer 100, wherein the atomization outlet 130 of the atomizer 100 is connected to the vaporization inlet 201 of the first vaporization chamber 200.

[0085] like Figure 2 As shown, in the vaporizer 10 provided in this embodiment of the invention, a first heating component 210 is provided on the side wall of the first vaporization chamber 200. The first heating component 210 is used to heat the side wall of the first vaporization chamber 200 to maintain a preset temperature inside the first vaporization chamber 200. Figure 2 As shown, the first heating assembly 210 is arranged around the entire side wall of the first vaporization chamber 200. For example, the first heating assembly 210 mainly consists of multiple heating elements and TC (thermocouples), and is arranged at intervals along the circumference of the first vaporization chamber 200 on the outer peripheral wall of the first vaporization chamber 200. In addition, a heating assembly can also be arranged at the bottom of the first vaporization chamber 200.

[0086] The working principle of the vaporizer 10 in this embodiment of the invention is as follows: Figure 3 As shown, the airflow rapidly delivers the atomized droplets from the atomization outlet 130 of the atomizer 100 into the first vaporization chamber 200. Under the thermal radiation from the side walls and bottom of the first vaporization chamber 200, some of the droplets evaporate, and the remaining unevaporated droplets vaporize upon contact with the side walls and bottom. In reality, the first vaporization chamber 200 may contain a mixture of unvaporized liquid, carrier gas, and vaporized steam. This mixture is then discharged from the vaporization outlet 202 of the first vaporization chamber 200.

[0087] like Figure 2As shown, the specific structure of the first heating component 210 can be eight heating elements and TC surrounding the first vaporization chamber 200. This arrangement does not occupy the internal space of the first vaporization chamber 200, thereby maximizing the vaporization space of the first vaporization chamber 200 and maintaining the heat radiation and sidewall heating effect of the entire chamber. The outer wall of the first vaporization chamber 200 and the capillary tube 150 are both insulated, which can maintain the liquid water in the capillary tube 150 and nozzle 120 at a low temperature. After reaching the high temperature and high heat environment inside the first vaporization chamber 200, it can achieve instantaneous vaporization. The finer the liquid atomization, the better the atomization effect, the larger the heat transfer area of ​​the liquid surface, and the smaller the pressure change caused by the atomized liquid (the unvaporized part) contacting the sidewall of the first vaporization chamber 200 during diffusion. Therefore, setting the atomization outlet 130 of the atomizer 100 to a smaller airflow cross-sectional area is not only beneficial to reducing the minimum carrying capacity, but also beneficial to increasing the total heated area of ​​the atomized liquid and reducing the pressure change caused by contact with the side wall of the vaporization chamber, thereby increasing the vaporization rate to a certain extent.

[0088] To further improve the heating efficiency of the first vaporization chamber 200 and achieve temperature uniformity within the first vaporization chamber 200, such as Figure 4 As shown, a second heating component 220 is provided inside the first vaporization chamber 200. The second heating component 220 is located near the vaporization outlet 202 of the first vaporization chamber 200. This arrangement allows the wall surface and the interior of the first vaporization chamber 200 to be heated simultaneously, thereby improving the heating efficiency inside the chamber and quickly achieving uniform temperature inside the chamber, ensuring uniform gas pressure inside the chamber, which is beneficial to improving vaporization efficiency and heating uniformity, and enhancing vaporization rate and its stability. When the vaporization rate of the liquid is improved in the manner described above, the amount of carrier gas used can be expected to be reduced under preset process conditions. In addition, by placing the second heating component 220 near the vaporization outlet 202, it can come into contact with more liquid that may not be vaporized and vaporize it, further improving the vaporization rate.

[0089] In the vaporizer 10 provided in the embodiments of the present invention, such as Figure 5 As shown, the vaporization outlet 202 of the first vaporization chamber 200 can be connected to a second vaporization chamber 300, and a filter section 310 is provided between the inlet and outlet of the second vaporization chamber 300. The filter section 310 is made of a filter resin with thermal conductivity; alternatively, the filter section 310 is equipped with a third heating component. The second vaporization chamber 300 extends the vaporization path of the vaporizer 10, and the filter section 310 heats and vaporizes the water mist that is not fully vaporized in the first vaporization chamber 200, and optimizes the filtration of particles in the steam.

[0090] The vaporizer 10 provided in this embodiment of the invention includes the atomizer 100 described above, and thus can produce the same technical effects as the atomizer 100 described above, which will not be described again here.

[0091] This invention also provides a semiconductor process apparatus, such as... Figure 6 As shown, the semiconductor process equipment includes a reaction chamber 90 and the aforementioned vaporizer 10 connected to the reaction chamber 90. The vaporizer 10 has a gas supply path and a liquid supply path connected to its inlet side. Along the airflow direction, the gas supply path is sequentially equipped with a carrier gas pressure gauge 40, a carrier gas flow controller 50, a carrier gas filter 60, and a heat exchanger 70; the carrier gas flows through the heat exchanger 70 and is then discharged into the vaporizer 10. The liquid supply path is equipped with a liquid pressure gauge 20 and a liquid flow controller 30; the liquid flows through the liquid flow controller 30 and is then discharged into the vaporizer 10. Along the airflow direction, the vaporizer 10 has a vaporization filter 80 and the reaction chamber 90 connected to its outlet side.

[0092] Specifically, in this embodiment of the invention, oxygen is still used as the carrier gas and liquid water is used as the liquid.

[0093] The vaporizer 10 includes an atomizer 100 and a vaporization chamber 400; such as Figure 1 As shown, the nozzle 120 of the atomizer 100 is connected to a capillary tube 150, which is connected to a liquid supply path to provide liquid water; as Figure 6 As shown, the carrier gas chamber 110 of the atomizer 100 is connected to the gas supply path to provide oxygen; the vaporization outlet of the vaporization chamber 400 is connected to the inlet of the vaporization filter 80, and the outlet of the vaporization filter 80 is connected to the reaction chamber 90. Wherein, as Figure 2 and Figure 3 As shown, the vaporization chamber 400 may include a first vaporization chamber 200. In addition, the vaporization chamber 400 may be configured with other structures, such as... Figure 4 As shown, the vaporization chamber 400 includes a first vaporization chamber 200 and a second vaporization chamber 300 that are connected to each other.

[0094] In the semiconductor process equipment provided in this embodiment of the invention, the gas pressure range of the reaction chamber 90 is 200 Torr to 500 Torr; the curing temperature range of the reaction chamber 90 is 300℃ to 600℃.

[0095] Specifically, he, such as Figure 6As shown, the intake air path used in the SOD Anneal device is as follows: Ultrapure water (UPW) receives pressure feedback from the liquid pressure gauge 20, passes through the liquid flow controller 30, and is controlled by the liquid water flow rate set by the Recipe before reaching the vaporizer 10 (e.g., the first vaporization chamber 200). At the same time, the carrier gas (oxygen) receives pressure feedback from the carrier gas pressure gauge 40, passes through the carrier gas flow controller 50, and is controlled by the gas flow rate set by the Recipe before reaching the carrier gas filter 60. After being heated by the heat exchanger 70, the carrier gas enters the vaporizer 10 (e.g., the first vaporization chamber 200) at a certain temperature.

[0096] like Figure 1 , Figure 6 As shown, specifically, in the semiconductor process equipment of this embodiment of the invention, taking the vaporization chamber 400 including the first vaporization chamber 200 as an example, inside the first vaporization chamber 200: liquid water flows through the capillary tube 150 to the nozzle 120 of the atomizer 100. In order to completely atomize the liquid water and make the speed of the carrier gas carrying the liquid water reach the speed of sound when it exits the atomization outlet 130 of the atomizer 100, in this embodiment, oxygen is used as the auxiliary gas. The oxygen is delivered into the carrier gas chamber 110 and forms a high-speed airflow at the outlet 111 of the carrier gas chamber 110 and is discharged to the vicinity of the atomization outlet 130 of the atomizer 100. The high-speed airflow merges with the liquid water accumulated at the end of the nozzle 120 near the atomization outlet 130, so that the liquid water is atomized and reaches the first vaporization chamber 200. After passing through the radiant heat of the inner wall of the first vaporization chamber 200 or directly contacting the inner wall of the first vaporization chamber 200, the liquid water mist is vaporized into water vapor. The carrier gas, water vapor, etc. are discharged from the vaporization outlet 202 of the first vaporization chamber 200. The water vapor and carrier gas discharged from the vaporizer 10 enter the reaction chamber 90 after passing through the vaporization filter 80, for example, entering the reaction chamber 90 of a vertical furnace.

[0097] It should be noted that, in the embodiments of the present invention, as... Figure 6 As shown, due to limitations in pipe height and other hardware conditions, the pressure of the liquid water in the pressure gauge 20 is maintained above 150 kPa to ensure that the liquid water enters the atomizer outlet at a certain flow rate. The flow rate of the carrier gas is affected by the supply gas pressure, specifically, as shown... Figure 1 As shown, the airflow cross-sectional area of ​​the carrier gas chamber 110 gradually decreases. During the process of a fixed flow rate of carrier gas from the carrier gas chamber 110 to the atomization outlet 130 of the atomizer 100, the airflow cross-sectional area of ​​the carrier gas chamber 110 gradually decreases. More gas will pass through the airflow cross-sectional area per unit area. Therefore, at the end of the gradual change in the carrier gas chamber 110, that is, at the atomization outlet 130 of the atomizer 100, the airflow velocity reaches its maximum value, thereby driving the liquid water through the atomization outlet 130. In this process, the liquid water is atomized, and the atomized product enters the heated vaporization chamber 400.

[0098] In summary, based on the water and gas supply pressures, this embodiment of the invention designs the airflow cross-sectional area of ​​the atomization outlet 130 of the atomizer 100 to be approximately 0.000000045 m². 2 ~0.0000001m 2 This design enables safe atomization, and the vaporizer 10 exhibits no alarms or other abnormalities. Based on this airflow cross-sectional area, the atomizer 100 theoretically has a carrier gas velocity at the atomization outlet 130 that, when using a carrier gas volume exceeding 4.5 SLM, will result in a flow velocity exceeding (carrier gas volume (m³ / s)). 3 / s) / Carrier pore area (m²) 2 At a speed of 1666 m / s, the carrier gas will be ejected from the atomization outlet 130 at a speed approaching five times the speed of sound. The total area of ​​the atomized droplets exceeds the cross-sectional area of ​​the airflow by approximately 0.00000015 m². 2 ~0.0000002m 2 Given the total area of ​​the atomized droplets, it can be determined that the airflow cross-sectional area of ​​the atomizing outlet 130 used in this embodiment of the invention is approximately 0.000000045 m². 2 ~0.0000001m 2 The atomizer 100 is significantly superior to those with an airflow cross-sectional area of ​​approximately 0.00000015m². 2 ~0.0000002m 2 Atomizer 100 at that time.

[0099] In addition, the embodiments of the present invention can achieve low carrier gas volume, which increases the process design space to adapt to applications in the field of integrated circuit manufacturing with different aspect ratios.

[0100] This invention also provides a semiconductor process method applied to the aforementioned semiconductor process equipment to prepare a semiconductor film layer. The invention includes:

[0101] S100 controls the liquid to flow sequentially through a liquid pressure gauge and a liquid flow controller before being discharged into the vaporizer; the liquid flow rate range is less than 20 g / min.

[0102] Preferably, the liquid flow rate range is 9 g / min to 20 g / min;

[0103] S200 controls the carrier gas to flow sequentially through the carrier gas pressure gauge, carrier gas flow controller, carrier gas filter and heat exchanger, and then discharge into the vaporizer; the carrier gas flow range is 4.5SLM~10SLM.

[0104] S300 controls the vaporization products after vaporization in the vaporizer to flow through the vaporization filter and be discharged into the reaction chamber.

[0105] In addition, the gas pressure range of the reaction chamber can be controlled from 200 Torr to 500 Torr, and the curing temperature range can be controlled from 300℃ to 600℃.

[0106] The reaction principle and experimental structure of the semiconductor process equipment and method provided in the embodiments of the present invention will be described in detail below.

[0107] Taking oxygen as the carrier gas and liquid water as the liquid as an example, the basic reaction principle of the SOD Anneal process includes: gas phase diffusion and interfacial reaction. Oxygen and liquid water diffuse through the SiO2 film layer that has already been reacted to react with the polysilazane interface. Among them, the gas phase diffusion process is a low-pressure (300-800 Torr) water vapor diffusion. Under low pressure, the residence time of water vapor is short, which makes the surface concentration of the gas phase in a significant dynamic process. Under the premise of maintaining the same oxygen / liquid water partial pressure ratio, significantly increasing the amount of oxygen / liquid water proportionally increases the probability of dynamically replenishing water molecules at the interface. Its effect is the same as the effect of unilaterally increasing liquid water, both of which will cause excessive volatilization of gases such as H2 from the film, causing process problems.

[0108] In the process of the interfacial reaction, this embodiment of the invention takes the perhydropolysilazane with a repeating (SiH2NH)-n simple chain structure as an example. Specifically, as follows... Figure 7 , Figure 8 As shown, it has chain, cyclic, or repeating Si-N cross-linked structures, or a combination of chain, cyclic, and cross-linked structures. The ends of its molecular chains are generally considered to be -SiH3 structures. The weight-average molecular weight of perhydropolysilazane largely determines the defect level, step coverage (penetration), curing speed, and volume shrinkage rate in terms of material properties. Materials with high weight-average molecular weight are less prone to low-molecular-weight volatilization during curing (therefore, their shrinkage rate is low), are less prone to oxidation in air, and have a low defect level. However, excessively high weight-average molecular weight can lead to poor step coverage (excessive viscosity and poor coatability) and excessively fast curing speed. In this embodiment of the invention, a method for preparing perhydropolysilazane with a certain molecular weight is used, which involves the condensation polymerization of low molecular weight inorganic perhydropolysilazane under alkali catalysis. The temperature is controlled at a relatively low level (100℃~250℃, the purpose being to avoid damaging or disrupting the structure). This preparation method also reflects that the polycondensation reaction generated by the all-hydrogen polysilazane material used in the embodiments of the present invention during heating or reaction does not include the polycondensation reaction between Si and N.

[0109] The interfacial reaction process used in this invention is described as follows: When heated to high temperatures, the all-hydrogen polysilazane readily undergoes a dehydrogenation coupling reaction to produce hydrogen (H2), as shown in equation ⑦. During the reaction with liquid water (H2O): Si-H bonds react with liquid water (H2O) to generate hydrogen (H2), as shown in equation ⑤; Si-N bonds react with liquid water (H2O) to generate NH3, as shown in equation ②. To prevent the excessive generation of hydrogen (H2) and its escape from the membrane layer, which could cause pores and make the membrane denser... To address issues such as temperature, a certain amount of oxygen (O2) needs to be introduced simultaneously during the heating, high-temperature, or reaction with liquid water (H2O). The reaction of oxygen (O2) with Si-H inhibits the process of Si-H bonds reacting with liquid water (H2O) to generate hydrogen (H2), as shown in equations ⑤ and ⑧, respectively. Furthermore, the reaction of oxygen (O2) with Si-H does not produce hydrogen (H2), as shown in equation ⑧. Therefore, oxygen (O2) does not additionally introduce defects or other film quality problems caused by hydrogen (H2).

[0110] Compared to the reaction of liquid water (H2O) with perhydropolysilazane materials, the amount of Si-O generated by the reaction of oxygen (O2) with perhydropolysilazane materials is limited. Taking the introduction of only a single gas, oxygen (O2), as an example, the principle behind the limited amount of Si-O generated is explained as follows: oxygen (O2) reacts with Si-H to generate the intermediate Si-OH (see Equation ⑧), and Si-OH condenses to produce SiO2 (see Equation ③). However, the amount of SiO2 generated by Equation ⑧ is affected by the amount of Si-H (weight-average molecular weight) and the molecular structure. Firstly, oxygen (O2) reacts directly with silicon atoms after the main chain undergoes thermal self-decomposition (see formula ⑨) to generate SiO2 (see formula ⑩). The thermal self-decomposition of the main chain (see formula ⑨) generates Si-N bonds with silicon atoms. Among them, the Si-N bonds condense with the Si-OH generated in formula ⑨ to generate SiO2, but this is also indirectly limited by the amount of Si-H, and the amount of silicon atoms generated is limited. These two limitations result in insufficient reaction degree and reaction rate between oxygen (O2) and perhydropolysilazane.

[0111] (1) Hydrolysis and condensation of Si-N:

[0112] Hydrolysis: ≡Si-NH-Si≡ + H₂O → ≡Si-OH + ≡Si-NH₂ ----①

[0113] ≡Si-NH2+H20→≡Si-OH+NH3↑---②

[0114] Polycondensation: ≡Si-OH + HO-Si≡ → ​​≡Si-O-Si≡ + H₂O --- ③

[0115] ≡Si-NH2+HO-Si≡→≡Si-O-Si≡+NH3↑---④

[0116] (2) Hydrolysis and condensation of Si-H:

[0117] Hydrolysis: ≡Si-H + H₂O → ≡Si-OH + H₂↑ ----⑤

[0118] Polycondensation: ≡Si-OH + HO-Si → ≡Si-O-Si≡ + H₂O ----⑥

[0119] (3) Deoxygenation coupling reaction Dehydrocoupling .reaction):

[0120] ≡Si-H+=NH→≡Si-N=+H2↑----⑦

[0121] (4) Oxidation reaction:

[0122] 2≡Si-H+O2→2≡Si-OH----⑧

[0123] ≡Si-NH-Si≡→≡Si·+·NH-Si≡----⑨

[0124] 4≡Si·+O2→2≡Si-O-Si≡----⑩

[0125] In the low-pressure environment of a vertical furnace, a high oxygen partial pressure will cause a decrease in the partial pressure of liquid water, affecting the degree of curing. A low oxygen partial pressure will reduce the inhibition ability, leading to the formation of pores or surface defects. At the same time, excessively increasing the liquid water / oxygen ratio will increase the probability of liquid water replenishing and contacting the film surface under the same low-pressure control environment of the vertical furnace. This is equivalent to the effect of increasing the partial pressure of liquid water. Based on this, in this embodiment of the invention, under low pressure, the oxygen / liquid water pressure ratio is controlled at approximately 1000:2, that is, 1 standard liter / minute: 2 g / min of liquid water weight.

[0126] The following is a comparative analysis of two different process recipe settings for the atomization outlet 130 of the atomizer 100, using different airflow cross-sectional areas. For example... Figure 9 , Figure 10 As shown, where, Figure 9 The airflow cross-sectional area of ​​the atomizing outlet 130 is shown to be in the range of 0.00000015m. 2 ~0.0000002m 2 Process Recipe settings; Figure 10 The airflow cross-sectional area of ​​the atomizing outlet 130 is shown to be in the range of 0.000000045m². 2 ~0.0000001m 2 The process recipe settings.

[0127] like Figure 9 As shown, the material is loaded into the reaction chamber and kept at a low temperature (e.g., 100℃~250℃) during the 90-stage process (to reduce the temperature increase during the process of entering the chamber). Then, the temperature is raised to the first curing temperature (e.g., 300℃~600℃) for curing. Next, the temperature is raised to the second curing temperature (e.g., 650℃~1000℃). During this process, a second curing is performed to ensure that the entire film layer is completely cured. At the same time, inert gas (e.g., N2, Ar) is introduced in the latter part of the second curing temperature to purge particles. Finally, the temperature is lowered to the low temperature range (e.g., 100℃~250℃) and then unloaded. During the two curing processes, the airflow cross-sectional area of ​​the atomizing outlet 130 of the atomizer 100 limits the amount of carrier gas that can be introduced to no less than 15 SLM. When using the proportions based on the weight-average molecular weight and structure of the all-hydrogen polysilazane, the liquid water flow rate should be no less than 30 g / min under standard conditions. However, due to hardware limitations, the vaporizer 10 can only supply a full-range flow rate of 20 g / min, resulting in a low partial pressure of liquid water, leading to incomplete curing and difficulty in achieving the required film thickness. Adjusting the first curing temperature, for example, from 300℃ to 600℃, can easily cause excessively high temperatures, premature curing of the top of the film, and prevent the gas generated in the middle and bottom layers from escaping, resulting in an insufficient film thickness.

[0128] like Figure 10 As shown, when the airflow cross-sectional area of ​​the atomizing outlet 130 of the atomizer 100 is designed to be 0.000000045m² 2 ~0.0000001m 2 At this time, the carrier gas is limited to a minimum of not less than 4.5 SLM, and the liquid water is set to, for example, 9 g / min under standard conditions according to the partial pressure ratio, maintaining the preset partial pressure ratio. It can be adjusted slightly proportionally according to the actual test results of process characterization (e.g., increased or decreased), or the oxygen content can be adjusted according to different industrial applications (e.g., increased) to suppress the generation of pore defects on the membrane surface, thereby ensuring the membrane quality during the curing process of different molecular weight all-hydrogen polysilazanes used in different industrial applications.

[0129] The following analysis examines the FTIR test results before and after film curing. For example... Figure 11 , Figure 12 As shown, where, Figure 11 The test results before the film curing are shown. Figure 12 The test results of the vaporizer 10 provided in the embodiment of the present invention after high-temperature curing are shown. The airflow cross-sectional area of ​​the atomization outlet 130 in the vaporizer 10 is 0.000000045m². 2 ~0.0000001m 2 .

[0130] like Figure 11 , Figure 12 As shown, the test results of the all-hydrogen polysilicon nitrogen film on the Thermo Fisher IS50 Fourier transform infrared spectrometer show that, under the semi-quantitative testing conditions of this equipment, the infrared vibrations of Si-N, Si-OH, NH, and Si-H in the pre-cured film are obvious. After being processed by the vaporizer 10 in this embodiment of the invention, the airflow cross-sectional area of ​​the atomization outlet 130 is reduced to 0.000000045 m². 2 ~0.0000001m 2 After high-temperature curing in the vertical furnace, the absorption intensity of Si-O during stretching, bending, and swaying is within the normal range, and the infrared vibrations of Si-N, Si-OH, NH, and Si-H molecules before curing disappear. Therefore, it can be concluded that the atomizer 100, vaporizer 10, semiconductor process equipment, and method provided in this embodiment of the invention enable the hydrolysis and conversion of all-hydrogen polysilazane spin-coated on a bare silicon wafer (unpatterned silicon wafer) to form a silicon-oxygen insulator. The above test data analysis preliminarily indicates that the SOD Anneal vertical furnace equipment possesses the basic conditions for domestic substitution of 12-inch integrated circuits.

[0131] In the description of this invention, it should be noted that the terms "upper", "lower", "front", "horizontal", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0132] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the term "installation" should be interpreted broadly. For example, it can refer to a fixed connection, a detachable connection, or an integral connection; it can refer to a mechanical connection or an electrical connection; it can refer to a direct connection or an indirect connection through an intermediate medium; it can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0133] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. An atomizer, characterized in that, It includes a nozzle (120) and a carrier gas chamber (110), the carrier gas chamber (110) being used to provide carrier gas and the nozzle (120) being used to provide sprayed liquid; The outlet of the nozzle (120) is close to and connected to the atomization outlet (130) of the atomizer (100). The air outlet (111) of the carrier gas chamber (110) is close to and connected to the atomization outlet (130), and the airflow cross-sectional area of ​​the air outlet (111) in the carrier gas chamber (110) is the smallest. The airflow cross-sectional area of ​​the atomizing outlet (130) is 0.000000045m². 2 ~0.0000001m 2 ; The nozzle (120) has a mounting hole (121) connected to the liquid outlet, and a capillary tube (150) is fixed inside the mounting hole (121). The inner diameter of the capillary tube (150) is larger than the inner diameter of the nozzle (120).

2. The atomizer according to claim 1, characterized in that, The airflow cross-sectional area of ​​the atomizing outlet (130) is 0.000000045m². 2 ~0.00000009m 2 .

3. The atomizer according to claim 1, characterized in that, The carrier gas chamber (110) is arranged around the nozzle (120); The gap between the outer wall of the air carrier chamber (110) and the outer wall of the nozzle (120) forms the air outlet (111) of the air carrier chamber (110).

4. The atomizer according to claim 1, characterized in that, The cross-sectional area of ​​the airflow in the carrier gas chamber (110) along its airflow direction gradually decreases.

5. The atomizer according to any one of claims 1-4, characterized in that, The nozzle (120) is made of heat-insulating resin material.

6. The atomizer according to claim 1, characterized in that, It also includes a heat insulation sleeve (140) made of heat insulation material; The mounting hole (121), the heat insulation sleeve (140), and the capillary tube (150) are sequentially fitted radially from the outside to the inside and are coaxial.

7. The atomizer according to claim 5, characterized in that, The carrier gas flow rate at the atomization outlet (130) is in the range of 4.5 SLM to 10 SLM; And / or, the liquid flow rate at the atomization outlet (130) is less than 20 g / min.

8. A vaporizer, characterized in that, It includes a first vaporization chamber (200) and an atomizer (100) according to any one of claims 1-7, wherein the atomization outlet (130) of the atomizer (100) is connected to the vaporization inlet (201) of the first vaporization chamber (200).

9. The vaporizer according to claim 8, characterized in that, The first vaporization chamber (200) has a first heating component (210) on its side wall.

10. The vaporizer according to claim 9, characterized in that, The first heating component (210) is disposed around the entire sidewall of the first vaporization chamber (200).

11. The vaporizer according to claim 8, characterized in that, The first vaporization chamber (200) is provided with a second heating component (220), which is located near the vaporization outlet (202) of the first vaporization chamber (200).

12. The vaporizer according to any one of claims 8-11, characterized in that, The vaporization outlet (202) of the first vaporization chamber (200) is connected to the second vaporization chamber (300), and a filter section (310) is provided between the inlet and outlet of the second vaporization chamber (300).

13. The vaporizer according to claim 12, characterized in that, The filter section (310) is made of a filter resin with thermal conductivity; or, the filter section (310) is provided with a third heating component.

14. A semiconductor process apparatus, characterized in that, It includes a reaction chamber (90) and a vaporizer (10) as described in any one of claims 8-13, which is in communication with the reaction chamber (90).

15. The semiconductor process equipment according to claim 14, characterized in that, The inlet side of the vaporizer (10) is connected to a gas supply path and a liquid supply path; Along the airflow direction, the air supply path is provided with a carrier gas pressure gauge (40), a carrier gas flow controller (50), a carrier gas filter (60) and a heat exchanger (70) in sequence. The liquid supply path is equipped with a liquid pressure gauge (20) and a liquid flow controller (30). Along the airflow direction, the outlet side of the vaporizer (10) is sequentially connected to a vaporization filter (80) and a reaction chamber (90).

16. A semiconductor process method, characterized in that, The method is applied to the semiconductor process equipment of claim 15 to prepare a semiconductor film layer; the method includes: The liquid is controlled to flow sequentially through the liquid pressure gauge and the liquid flow controller, and then discharged into the vaporizer; wherein the liquid flow rate is less than 20 g / min. The carrier gas is controlled to flow sequentially through a carrier gas pressure gauge, a carrier gas flow controller, a carrier gas filter, and a heat exchanger before being discharged into the vaporizer; wherein the carrier gas flow rate ranges from 4.5 SLM to 10 SLM. The vaporization products after vaporization by the vaporizer are controlled to flow through the vaporization filter and discharged into the reaction chamber.

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