Device and method for manufacturing a single crystal superalloy ring-shaped thin-walled structure

Abstract

The application discloses a preparation device and a preparation method of a single-crystal high-temperature alloy ring-shaped thin-wall structural member, the device comprises a wax feeding runner cavity, a feeding riser wax model cavity, a ring-shaped thin-wall structural member wax model cavity, a crystal introduction cone wax model cavity and a spiral crystal selector wax model cavity, and a ceramic ring and a ceramic ring positioning movable block ejection mechanism are embedded in the ring-shaped thin-wall structural member wax model cavity. The method comprises the following steps: assembling a metal mold to form the wax model cavity, embedding the ceramic ring and the ceramic ring positioning movable block ejection mechanism, closing the metal mold, injecting wax into the wax feeding runner cavity and completing mold filling, opening the metal mold, taking the wax mold out of the metal mold through the ceramic ring positioning movable block ejection mechanism, coating paraffin on the surface of the ceramic ring which is not in contact with the wax mold except for a positioning clamping groove, adopting a precision investment casting method to prepare a ceramic mold shell and adopting a directional solidification method to perform pouring forming. The application can prepare the ring-shaped thin-wall structural casting with extremely high coaxiality.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of investment casting of high-temperature alloy, and particularly relates to a preparation device and a preparation method of a single-crystal high-temperature alloy ring-shaped thin-wall structural part. BACKGROUND

[0002] It is known that the high-temperature alloy structural part of an early aircraft engine generally adopts an equiaxed crystal solid member. With the gradual improvement of the performance requirements of the engine, in order to improve the temperature resistance, load capacity and service life of the high-temperature alloy structural part and reduce the overall weight of the engine, the equiaxed crystal high-temperature alloy solid structural part is gradually replaced by a single-crystal high-temperature alloy thin-wall structural part, so that the thin-wall structure and the single-crystal structure are typical structural features of the high-temperature alloy structural part of an advanced aircraft engine.

[0003] In the development of the single-crystal high-temperature alloy hollow turbine blade, the aircraft engine designers and single-crystal casting technologists have made detailed design and process coordination research and mastered a large amount of preparation technology of the single-crystal high-temperature alloy hollow turbine blade. However, in the development of the single-crystal high-temperature alloy structural part, the single-crystal high-temperature alloy structural part is rarely used in the active aircraft engine and only begins to be popularized and applied in a few newly developed advanced aircraft engines, so that the preparation technology of the single-crystal high-temperature alloy thin-wall structural part is extremely rare. In summary, the development of the preparation technology of the single-crystal high-temperature alloy thin-wall structural part, especially the development of the preparation technology of the thin-wall structural part with typical shape features such as a ring shape, a sector shape and a groove shape, can provide technical support for the weight reduction design and performance improvement of the advanced aircraft engine.

[0004] The patent for invention with the application publication number CN104475766A discloses a numerical control fine machining method for a ring-shaped omega groove of a titanium alloy thin-wall disc ring part, which comprises the following steps: determining the numerical control fine machining allowance of each machining stage of the ring-shaped omega groove of the titanium alloy thin-wall disc ring part; determining the machining scheme of the ring-shaped omega groove of the titanium alloy large-diameter thin-wall disc ring part in the fine machining stage; compiling the numerical control machining program of the ring-shaped omega groove of the titanium alloy large-diameter thin-wall disc ring part in the fine machining stage; and controlling the machining route of each machining stage of the numerical control fine machining of the ring-shaped omega groove of the titanium alloy thin-wall disc ring part. The technical scheme adopts the mechanical machining method to prepare the ring-shaped omega groove of the thin-wall disc ring part, and cannot integrally cast the thin-wall disc ring part and the ring-shaped omega groove thereon by casting.

[0005] Patent application CN115121844A discloses a milling device for thin-walled aluminum alloy structural parts, including a frame and thin-walled aluminum alloy tubes. The frame is equipped with an adjustable clamping mechanism for clamping thin-walled aluminum alloy tubes of different diameters, which are then fixed to the device. A moving milling mechanism is also mounted on the frame for efficient milling of the inner wall of the tubes. A cooling mechanism is also provided on the frame to cool the tubes during milling. A chip collection mechanism collects the milled aluminum alloy chips. A ejector mechanism removes the milled tubes from the milling area. The moving milling mechanism, cooling mechanism, chip collection mechanism, and ejector mechanism are interconnected. This technical solution still uses machining methods to prepare thin-walled structural parts and cannot use casting to integrally cast them.

[0006] In summary, existing technologies typically employ machining methods to prepare thin-walled structural components and certain special structures on them. However, these methods suffer from defects such as low machining accuracy, susceptibility to secondary damage to the thin-walled components, and the tendency to produce microscopic porosity. Therefore, it is necessary to develop a fabrication device and method for high-temperature alloy thin-walled structural components to achieve integral casting and forming of these components. Summary of the Invention

[0007] To address the problems existing in the prior art, the present invention provides a fabrication apparatus for a single-crystal high-temperature alloy annular thin-walled structure, comprising, from top to bottom, a wax runner cavity, a feeding riser wax model cavity, an annular thin-walled structure wax model cavity, a crystal-leading cone wax model cavity, and a spiral crystal selector wax model cavity; a ceramic ring and a ceramic ring positioning block ejection mechanism are embedded in the annular thin-walled structure wax model cavity, and the ceramic ring is fixedly connected to the ceramic ring positioning block ejection mechanism.

[0008] Preferably, the number of the annular thin-walled structural wax model cavities is at least two, and they are connected in series along the single crystal growth direction; a connecting channel is provided between two adjacent annular thin-walled structural wax model cavities.

[0009] In any of the above embodiments, it is preferred that the cone angle of the crystal-leading cone wax model cavity is 30-60°.

[0010] In the present application, the wax model cavity of the spiral selector is composed of a starting section and a selection section. In the selection process, the starting section functions to chill the liquid metal to form fine equiaxed grains, and the grains grow along the temperature gradient direction, i.e. the heat flow direction to form columnar crystal structure; the selection section functions to eliminate the columnar crystal grains with non-

[001] crystal orientation through geometric space restriction to obtain single grains with

[001] crystal orientation which grows fastest along the heat flow direction; the seeding cone functions to enlarge the volume of the single grains to adapt to the requirements of the shape and structure of the part, and the cone angle of the seeding cone is 30-60°, too small cone angle is not conducive to quickly forming the shape of the casting, and too large cone angle is prone to form mixed crystals, i.e. the single grains are damaged to form multiple grains.

[0011] Preferably in any of the above solutions, four positioning clamping grooves are arranged on the surface of the ceramic ring along the circumferential edge; the thickness of the ceramic ring is 0.8-3mm, the ratio of the inner ring diameter to the outer ring diameter of the ceramic ring is 1:1.5-3, and the ratio of the inner ring diameter perpendicular to the single crystal growth direction to the inner ring diameter along the single crystal growth direction is 1:1.02-1.11.

[0012] In the present application, the purpose of arranging the ceramic ring is to make the casting finally form a ring-shaped thin-wall structure with high coaxiality. The ceramic ring is elongated along the longitudinal direction, i.e. along the single crystal growth direction, in order to adapt to the characteristics of the single crystal superalloy that the longitudinal shrinkage is large and the transverse shrinkage is small during the directional sequential solidification, i.e. the longitudinal dimension of the ceramic ring is compressed greatly and the transverse dimension is compressed slightly during the longitudinal shrinkage of the metal. Before the metal solidifies, pre-setting the ceramic ring to be elongated along the longitudinal direction is beneficial to finally obtain a casting with complete circular characteristics, and if the ceramic ring is not pre-set to be elongated along the longitudinal direction, the final obtained casting ring will present the characteristics of being flattened.

[0013] Preferably in any of the above solutions, the profile of the ceramic ring positioning plunger ejection mechanism is the same as that of the ceramic ring; four positioning bosses are arranged on the surface of the ceramic ring positioning plunger ejection mechanism along the circumferential edge, the four positioning bosses correspond to the four positioning clamping grooves and have the same shape; the height of the four positioning bosses is the same as the depth of the four positioning clamping grooves, and the four positioning bosses are fixedly connected with the four positioning clamping grooves.

[0014] The present application also provides a preparation method of a single crystal superalloy ring-shaped thin-wall structure part, which uses the preparation device of the single crystal superalloy ring-shaped thin-wall structure part according to any of the above solutions and comprises the following steps in sequence:

[0015] Step one: the metal mold of the device for preparing single crystal superalloy ring-shaped thin-walled structural member is assembled together to form the wax model cavity of the single crystal superalloy ring-shaped thin-walled structural member; the ceramic ring with a positioning slot and the ceramic ring positioning live block ejection mechanism with a positioning boss are embedded in each ring-shaped thin-walled structural member wax model cavity, and the positioning slot is fixed on the positioning boss;

[0016] Step two: the two-part metal mold is superimposed and closed, wax is injected into the wax runner cavity, the wax enters the wax model cavity of the single crystal superalloy ring-shaped thin-walled structural member, and the wax filling is completed;

[0017] Step three: after the wax filling is completed, the metal mold is opened, and the single crystal superalloy ring-shaped thin-walled structural member wax mold with a ceramic ring is ejected from the metal mold through the ceramic ring positioning live block ejection mechanism;

[0018] Step four: the surface of the ceramic ring not in contact with the single crystal superalloy ring-shaped thin-walled structural member wax mold is coated with paraffin wax, and the positioning slot on the surface of the ceramic ring is not coated with paraffin wax;

[0019] Step five: after the paraffin wax is coated, a plurality of single crystal superalloy ring-shaped thin-walled structural member wax molds with ceramic rings are combined to form a mold group, and a ceramic mold shell is prepared by using the investment casting method;

[0020] Step six: after the ceramic mold shell is prepared, the ceramic mold shell is placed in a directional solidification furnace, and directional solidification is used to pour and form, so that a single crystal superalloy ring-shaped thin-walled structural casting is obtained.

[0021] Preferably, in step two, the process parameters for injecting wax into the wax runner cavity are as follows: wax temperature 58-65℃, injection pressure 5-8bar, flow rate 100-200cc / s, injection time 8-20s, and pressure holding time 40-70s.

[0022] Preferably in any of the above solutions, in step four, the thickness of the paraffin wax coated on the surface of the ceramic ring not in contact with the single crystal superalloy ring-shaped thin-walled structural member wax mold is not greater than 0.03mm.

[0023] In the present application, paraffin wax is coated on the parts of the surface of the ceramic ring not in contact with the single crystal superalloy ring-shaped thin-walled structural member wax mold except the positioning slot, which is to ensure that the entire wax part (including the ceramic ring) is uniformly coated with ceramic slurry when the wax part is coated. The positioning slot is not coated with paraffin wax, which is to make the positioning slot on the ceramic ring directly contact the mold shell after the shell is prepared, so that no cavity is formed after the mold shell is dewaxed, the positioning of the ceramic ring in the ceramic mold shell is stable, and the final metal casting ring has high coaxiality. If the ceramic ring moves in the mold shell, the coaxiality of the metal casting ring will be poor.

[0024] In any of the above schemes, preferably, in step six, the wall thickness of the prepared single crystal high-temperature alloy annular thin-wall structure casting is 1-2.5 mm. In the same single crystal high-temperature alloy annular thin-wall structure casting, the wall thickness is thin at some positions and thick at some positions, the thinnest position has a wall thickness of 1 mm, and the thickest position has a wall thickness of 2.5 mm.

[0025] In the present application, there are two groups of metal molds of the single crystal high-temperature alloy annular thin-wall structure preparation device, only the ceramic ring and the ceramic ring positioning ejector mechanism are embedded in one group of metal molds, and the two groups of metal molds are stacked and combined. The investment casting method and the directional solidification method used in the present application are traditional methods, and no special limitation is made on the specific process parameters.

[0026] The single crystal high-temperature alloy annular thin-wall structure preparation device and the preparation method thereof have the following beneficial effects:

[0027] (1) In the investment casting process of the single crystal high-temperature alloy annular thin-wall structure, the ceramic ring is embedded in the single crystal high-temperature alloy annular thin-wall structure preparation device for precise positioning control, so that a single crystal high-temperature alloy annular thin-wall structure casting with extremely high coaxiality can be prepared.

[0028] (2) The prepared single crystal high-temperature alloy annular thin-wall structure wax mold can be connected in series along the single crystal growth direction, which is simple and easy to operate, the process conditions are easy to control, and is suitable for batch production. BRIEF DESCRIPTION OF DRAWINGS

[0029] Figure 1 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application;

[0030] Figure 2 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application; Figure 1 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application;

[0031] Figure 3 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application; Figure 1 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application;

[0032] Figure 4 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application; Figure 1 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application;

[0033] Figure 5 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application; Figure 1 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application;

[0034] Figure 6 It is a structure schematic view of a preferred embodiment of the single crystal high-temperature alloy annular thin-wall structure preparation device according to the present application; Figure 1A-A direction of the wax pattern of the single crystal superalloy ring thin-walled structure part with ceramic ring in the shown embodiment;

[0035] Figure 7 For Figure 1 B-B direction of the wax pattern of the single crystal superalloy ring thin-walled structure part with ceramic ring in the shown embodiment;

[0036] Figure 8 For Figure 1 Structure schematic diagram of the single crystal superalloy ring thin-walled structure casting in the shown embodiment;

[0037] Figure 9 For Figure 1 Front view of the single crystal superalloy ring thin-walled structure casting in the shown embodiment;

[0038] Figure 10 For Figure 1 C-C direction of the single crystal superalloy ring thin-walled structure casting in the shown embodiment;

[0039] Figure 11 For Figure 1 Structure schematic diagram of the ceramic ring in the shown embodiment;

[0040] Figure 12 For Figure 1 Coaxiality test diagram of the single crystal superalloy ring thin-walled structure casting prepared in the shown embodiment;

[0041] Figure 13 For Figure 1 Micro-porosity photo of the small wall thickness area on the single crystal superalloy ring thin-walled structure casting prepared in the shown embodiment;

[0042] Figure 14 For Figure 1 Single crystal dendrite photo of the small wall thickness area on the single crystal superalloy ring thin-walled structure casting prepared in the shown embodiment;

[0043] Figure 15 For Figure 1 Micro-porosity photo of the large wall thickness area on the single crystal superalloy ring thin-walled structure casting prepared in the shown embodiment;

[0044] Figure 16 For Figure 1 Single crystal dendrite photo of the large wall thickness area on the single crystal superalloy ring thin-walled structure casting prepared in the shown embodiment.

[0045] The diagram is labeled as follows: 1-Wax sprue cavity, 2-Shrinkage riser wax model cavity, 3-Annular thin-walled structural component wax model cavity, 4-Crystal guide cone wax model cavity, 5-Spiral crystal selector wax model cavity, 6-Ceramic ring, 61-Positioning slot, 7-Ceramic ring positioning block ejection mechanism, 71-Positioning boss, 8-Connecting channel, 9-Single crystal high-temperature alloy annular thin-walled structural component wax model, 10-Single crystal high-temperature alloy annular thin-walled structural casting. Detailed Implementation

[0046] To further understand the invention, the following detailed description of the invention will be provided in conjunction with specific embodiments.

[0047] Example 1:

[0048] like Figures 1-11 As shown, a preferred embodiment of the apparatus for preparing a single-crystal high-temperature alloy annular thin-walled structural component according to the present invention includes, from top to bottom, a wax runner cavity 1, a feeding riser wax model cavity 2, an annular thin-walled structural component wax model cavity 3, a crystal-leading cone wax model cavity 4, and a spiral crystal selector wax model cavity 5; a ceramic ring 6 and a ceramic ring positioning block ejection mechanism 7 are embedded in the annular thin-walled structural component wax model cavity 3, and the ceramic ring 6 is fixedly connected to the ceramic ring positioning block ejection mechanism 7.

[0049] The number of annular thin-walled structural wax model cavities 3 is two, and they are connected in series along the single crystal growth direction. A connecting channel 8 is provided between the two annular thin-walled structural wax model cavities 3. The cone angle α of the crystal-leading cone wax model cavity 4 is 40°. In this embodiment, the spiral crystal selector wax model cavity is composed of a starting section and a selection section. During the crystal selection process, the starting section cools the molten metal to form fine equiaxed grains. The grains grow along the temperature gradient direction, that is, the heat flow direction, to form a columnar crystal structure. The selection section eliminates the non-

[001] crystal orientation grains of the columnar crystals through geometric space constraints to obtain a single grain with the

[001] crystal orientation that grows fastest preferentially along the heat flow direction. The crystal-leading cone expands the volume of the single grain to meet the requirements of the part shape and structure. The cone angle of the crystal-leading cone is 30-60°. If the cone angle is too small, it is not conducive to quickly forming the casting shape. If the cone angle is too large, it is easy to form impurities, that is, the single grain is destroyed and multiple grains are formed.

[0050] Four positioning clamping grooves 61 are arranged on the surface of the ceramic ring 6 along the circumferential edge; the thickness of the ceramic ring 6 is 1.6 mm, the ratio of the inner ring diameter to the outer ring diameter of the ceramic ring 6 is 1:2, and the ratio of the inner ring diameter in the vertical single crystal growth direction to the inner ring diameter along the single crystal growth direction is 1:1.05. In this embodiment, the purpose of arranging the ceramic ring is to make the casting finally form a ring-shaped thin-walled structure with high coaxiality. The ceramic ring is elongated along the longitudinal direction, that is, elongated along the single crystal growth direction, in order to adapt to the characteristics of the single crystal superalloy that the longitudinal shrinkage is large and the transverse shrinkage is small during the directional sequential solidification process, that is, the longitudinal dimension of the ceramic ring is compressed greatly and the transverse dimension is compressed little during the longitudinal shrinkage of the metal. Before the metal solidifies, pre-setting the ceramic ring to be elongated along the longitudinal direction is beneficial to finally obtain a casting with complete circular characteristics. If the ceramic ring is not pre-set to be elongated along the longitudinal direction, the finally obtained casting ring will present a flattened feature.

[0051] The profile of the ceramic ring positioning plunger ejection mechanism 7 is the same as that of the ceramic ring 6; four positioning bosses 71 are arranged on the surface of the ceramic ring positioning plunger ejection mechanism 7 along the circumferential edge, the four positioning bosses 71 correspond to the four positioning clamping grooves 61 and have the same shape; the height of the four positioning bosses 71 is the same as the depth of the four positioning clamping grooves 61, and the four positioning bosses 71 are fixedly connected with the four positioning clamping grooves 61.

[0052] The embodiment also provides a preparation method of a single crystal superalloy ring-shaped thin-walled structure part, which uses the preparation device of the single crystal superalloy ring-shaped thin-walled structure part and comprises the following steps in sequence:

[0053] Step one: assemble the metal molds of the single crystal superalloy ring-shaped thin-walled structure part preparation device together to form a wax model cavity of the single crystal superalloy ring-shaped thin-walled structure part; embed the ceramic ring 6 with the positioning clamping grooves 61 and the ceramic ring positioning plunger ejection mechanism 7 with the positioning bosses 71 in each ring-shaped thin-walled structure part wax model cavity 3, and fix the positioning clamping grooves 61 on the positioning bosses 71;

[0054] Step two: superimpose the two-part metal molds to perform mold closing, inject wax into the wax runner cavity 1, and make the wax enter the wax model cavity of the single crystal superalloy ring-shaped thin-walled structure part and complete wax filling;

[0055] Step three: after the wax filling is completed, open the metal mold, and use the ceramic ring positioning plunger ejection mechanism 7 to eject the single crystal superalloy ring-shaped thin-walled structure part wax mold 9 with the ceramic ring 6 from the metal mold;

[0056] Step four: the surface of the ceramic ring 6 not in contact with the wax mold 9 of the single crystal superalloy ring-shaped thin-walled structure is coated with paraffin wax, and the positioning slot 61 on the surface of the ceramic ring 6 is not coated with paraffin wax;

[0057] Step five: after the paraffin wax coating is completed, a plurality of single crystal superalloy ring-shaped thin-walled structure wax molds 9 with ceramic rings 6 are combined to form a mold group, and a ceramic mold is prepared by using the investment casting method;

[0058] Step six: after the ceramic mold is prepared, the ceramic mold is placed in a directional solidification furnace, and directional solidification is used for casting and forming, so that a single crystal superalloy ring-shaped thin-walled structure casting 10 is obtained.

[0059] In step two, the process parameters for injecting wax into the wax material runner cavity are: wax temperature 60℃, injection pressure 6bar, flow rate 130cc / s, injection time 12s, and holding time 50s.

[0060] In step four, the thickness of the paraffin wax coated on the surface of the ceramic ring not in contact with the wax mold of the single crystal superalloy ring-shaped thin-walled structure is 0.02mm. In this embodiment, paraffin wax is coated on the surface of the ceramic ring not in contact with the wax mold of the single crystal superalloy ring-shaped thin-walled structure, except for the positioning slot, and the purpose is to ensure that the entire wax part is uniformly coated with ceramic slurry during shell coating (including the ceramic ring). The positioning slot is not coated with paraffin wax, and the purpose is to make the positioning slot on the ceramic ring directly contact the mold after shell preparation, so that no cavity is formed after the mold is dewaxed, ensuring that the ceramic ring is stably positioned in the ceramic mold, and finally forming a metal casting ring with high coaxiality. If the ceramic ring moves in the mold, it will result in poor coaxiality of the metal casting ring.

[0061] In step six, the single crystal superalloy ring-shaped thin-walled structure casting prepared has different wall thicknesses at different positions, with a thinnest wall thickness of 1mm and a thickest wall thickness of 2.5mm.

[0062] Figure 12 The coaxiality test diagram of the single crystal superalloy ring-shaped thin-walled structure casting prepared in this embodiment is tested by using an industrial CT detection device, and it can be seen from Figure 12 that the deviation between the centers of the inner circle and the outer circle of the single crystal superalloy ring-shaped thin-walled structure casting is only 0.1663mm, which indicates that the single crystal superalloy ring-shaped thin-walled structure casting prepared has extremely high coaxiality.

[0063] Figure 13 and Figure 14 the micro-porosity and single crystal dendrite photographs of the small wall thickness area of the single crystal superalloy ring-shaped thin-walled structure casting prepared in this embodiment, Figure 15 and Figure 16Micro-porosity photos and single crystal dendrite photos of the large-thickness area of the single crystal superalloy ring thin-wall structure castings prepared in this embodiment. It can be seen from Figures 13-16 that there is no obvious micro-porosity in the same single crystal superalloy ring thin-wall structure castings, whether in the small-thickness area or in the large-thickness area, the dendrite spacing of the small-thickness area is 0.334 mm, and the dendrite spacing of the large-thickness area is 0.373 mm, both of which are less than 0.5 mm, meeting the specification requirements.

[0064] In this embodiment, there are two sets of metal molds of the preparation device of the single crystal superalloy ring thin-wall structure, and only in one set of the metal molds, the ceramic ring and the ceramic ring positioning ejection mechanism are embedded, and the two sets of the metal molds are stacked and combined. The investment casting method and the directional solidification method adopted in this embodiment are traditional methods, and no special limitation is made to the specific process parameters.

[0065] The preparation device of the single crystal superalloy ring thin-wall structure and the preparation method thereof in this embodiment have the following advantages: (1) In the investment casting process of the single crystal superalloy ring thin-wall structure, by embedding the ceramic ring into the preparation device of the single crystal superalloy ring thin-wall structure for precise positioning control, a single crystal superalloy ring thin-wall structure casting with extremely high coaxiality can be prepared. (2) The wax mold of the single crystal superalloy ring thin-wall structure prepared can be connected in series along the single crystal growth direction, which is simple and easy to operate, the process conditions are easy to control, and is suitable for batch production.

[0066] Embodiment Two:

[0067] According to another preferred embodiment of the preparation device of the single crystal superalloy ring thin-wall structure and the preparation method thereof, the specific structure, process steps, technical principles, test equipment, and beneficial effects are basically the same as those of Embodiment One, except that:

[0068] (1) For the preparation device

[0069] The number of the wax model cavities of the ring thin-wall structure is two, and is connected in series along the single crystal growth direction. The cone angle a of the seeding cone wax model cavity is 30°. The thickness of the ceramic ring is 0.8 mm, the ratio of the inner ring diameter to the outer ring diameter of the ceramic ring is 1:1.5, and the ratio of the inner ring diameter perpendicular to the single crystal growth direction to the inner ring diameter along the single crystal growth direction is 1:1.02.

[0070] (2) For the preparation method

[0071] In step two, the process parameters for injecting wax into the wax feeding type cavity are as follows: wax temperature 58℃, injection pressure 5bar, flow rate 100cc / s, injection time 8s, and pressure maintaining time 40s. In step four, the thickness of the paraffin wax coated on the surface of the ceramic ring not in contact with the wax mold of the single-crystal high-temperature alloy annular thin-wall structural part is 0.01mm. In step six, the wall thickness of the single-crystal high-temperature alloy annular thin-wall structural part prepared is thin at some positions and thick at some positions, the thinnest position has a wall thickness of 1.5mm, and the thickest position has a wall thickness of 2mm.

[0072] Example three

[0073] According to another preferred embodiment of the preparation device and preparation method of the single-crystal high-temperature alloy annular thin-wall structural part of the present application, the specific structure, process steps, technical principles, test equipment, and beneficial effects are basically the same as those of example one, except that:

[0074] (1) for the preparation device

[0075] The number of wax model cavities of the annular thin-wall structural part is three, and they are connected in series along the single-crystal growth direction. The cone angle α of the seeding cone wax model cavity is 50°. The thickness of the ceramic ring is 2.3mm, the ratio of the inner ring diameter to the outer ring diameter of the ceramic ring is 1:2.5, and the ratio of the inner ring diameter perpendicular to the single-crystal growth direction to the inner ring diameter along the single-crystal growth direction is 1:1.08.

[0076] (2) for the preparation method

[0077] In step two, the process parameters for injecting wax into the wax feeding type cavity are as follows: wax temperature 63℃, injection pressure 7bar, flow rate 160cc / s, injection time 16s, and pressure maintaining time 60s. In step four, the thickness of the paraffin wax coated on the surface of the ceramic ring not in contact with the wax mold of the single-crystal high-temperature alloy annular thin-wall structural part is 0.02mm. In step six, the wall thickness of the single-crystal high-temperature alloy annular thin-wall structural part prepared is thin at some positions and thick at some positions, the thinnest position has a wall thickness of 1.2mm, and the thickest position has a wall thickness of 2.2mm.

[0078] Example four

[0079] According to another preferred embodiment of the preparation device and preparation method of the single-crystal high-temperature alloy annular thin-wall structural part of the present application, the specific structure, process steps, technical principles, test equipment, and beneficial effects are basically the same as those of example one, except that:

[0080] (1) for the preparation device

[0081] The number of wax model cavities of the annular thin-walled structure is four, and the wax model cavities are connected in series along the single crystal growth direction. The cone angle of the wax model cavity of the seeding cone is 60°. The thickness of the ceramic ring is 3 mm, the ratio of the inner ring diameter to the outer ring diameter of the ceramic ring is 1:3, and the ratio of the inner ring diameter perpendicular to the single crystal growth direction to the inner ring diameter along the single crystal growth direction is 1:1.11.

[0082] (2) for the preparation method

[0083] In step two, the process parameters for injecting the wax into the wax gate cavity are as follows: wax temperature 65℃, injection pressure 8 bar, flow rate 200 cc / s, injection time 20 s, and holding time 70 s. In step four, the thickness of the paraffin wax coated on the surface of the ceramic ring not in contact with the wax mold of the single crystal high-temperature alloy annular thin-walled structure part is 0.03 mm. In step six, on the same single crystal high-temperature alloy annular thin-walled structure casting prepared, some positions are thin-walled, some positions are thick-walled, the thinnest position is 1 mm thick, and the thickest position is 2 mm thick.

[0084] Special note: the technical solutions of the present application involve many parameters, and the synergistic effect between each parameter needs to be considered in order to obtain the beneficial effects and significant progress of the present application. Moreover, the value range of each parameter in the technical solution is obtained through a large number of tests, and the inventors have recorded a large number of test data for each parameter and the mutual combination of each parameter. Due to the limited space, the specific test data is not disclosed here.

[0085] As can be understood by those skilled in the art, the preparation device and method of the single crystal high-temperature alloy annular thin-walled structure part of the present application include any combination of the parts shown in the summary of the application and the specific embodiments part of the present application and the drawings. Due to the limited space and in order to make the specification concise, each scheme formed by these combinations is not described one by one. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. An apparatus for producing a single crystal high temperature alloy annular thin walled structural member, characterized by: The wax model cavity comprises a wax feeding cavity, a feeding riser wax model cavity, an annular thin-walled structure wax model cavity, a seeding cone wax model cavity and a spiral selector wax model cavity connected in sequence from top to bottom. The annular thin-walled structure wax model cavity is embedded with a ceramic ring and a ceramic ring positioning plunger ejection mechanism, and the ceramic ring is fixedly connected with the ceramic ring positioning plunger ejection mechanism. The number of the annular thin-walled structure wax model cavities is at least two, and the annular thin-walled structure wax model cavities are connected in series along the single crystal growth direction; a connecting channel is arranged between two adjacent annular thin-walled structure wax model cavities; and the taper angle of the seeding cone wax model cavity is 30-60°. Four positioning clamping grooves are arranged on the surface of the ceramic ring along the circumferential edge; the thickness of the ceramic ring is 0.8-3 mm; the ratio of the inner ring diameter to the outer ring diameter of the ceramic ring is 1:1.5-3; and the ratio of the inner ring diameter perpendicular to the single crystal growth direction to the inner ring diameter along the single crystal growth direction is 1:1.02-1.

11.

2. The apparatus of claim 1, wherein: The profile of the ceramic ring positioning plunger ejection mechanism is the same as that of the ceramic ring; four positioning bosses are arranged on the surface of the ceramic ring positioning plunger ejection mechanism along the circumferential edge, the four positioning bosses correspond to the four positioning clamping grooves and have the same shape; the height of the four positioning bosses is the same as the depth of the four positioning clamping grooves; and the four positioning bosses are fixedly connected with the four positioning clamping grooves.

3. A method of making a single crystal high temperature alloy annular thin walled structure, characterized by: The preparation device of the single crystal high-temperature alloy annular thin-walled structure part according to claim 1 or 2 comprises the following steps in sequence: Step one: assemble the metal molds of the single crystal high-temperature alloy annular thin-walled structure part preparation device together to form the wax model cavity of the single crystal high-temperature alloy annular thin-walled structure part; embed the ceramic ring with positioning clamping grooves and the ceramic ring positioning plunger ejection mechanism with positioning bosses in each annular thin-walled structure wax model cavity, and fix the positioning clamping grooves on the positioning bosses; Step two: superimpose the two-part metal molds to complete the wax feeding cavity injection of wax, the wax enters the wax model cavity of the single crystal high-temperature alloy annular thin-walled structure part, and the wax feeding is completed; Step three: after the wax feeding is completed, open the metal mold, and take out the single crystal high-temperature alloy annular thin-walled structure wax mold with the ceramic ring from the metal mold through the ceramic ring positioning plunger ejection mechanism; Step four: apply petroleum jelly to the surface of the ceramic ring that is not in contact with the single crystal high-temperature alloy annular thin-walled structure wax mold; Step five: after the petroleum jelly is applied, combine a plurality of single crystal high-temperature alloy annular thin-walled structure wax molds with ceramic rings to form a mold group, and use the investment casting method to prepare a ceramic mold shell; Step six: after the ceramic mold shell is prepared, place the ceramic mold shell in a directional solidification furnace, and use the directional solidification method to pour and form, so that the single crystal high-temperature alloy annular thin-walled structure casting is obtained.

4. The method of producing a single crystal high temperature alloy annular thin walled structure of claim 3, wherein: In step two, the process parameters for injecting wax into the wax feeding cavity are as follows: wax temperature 58-65℃, injection pressure 5-8 bar, flow rate 100-200 cc / s, injection time 8-20 s, and pressure holding time 40-70 s.

5. The method of producing a monocrystalline high-temperature alloy ring-shaped thin-walled structural member according to claim 4, characterized by: In step four, the thickness of the paraffin wax coated on the surface of the ceramic ring not in contact with the wax model of the single-crystal high-temperature alloy ring-shaped thin-wall structure is not more than 0.03 mm.

6. The method of making a monocrystalline high-temperature alloy annular thin-walled structure of claim 5, wherein: In step six, the wall thickness of the single-crystal high-temperature alloy ring-shaped thin-wall structure casting prepared is 1-2.5 mm.

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