A magnetron sputtering coating process

Abstract

The present invention discloses a magnetron sputtering coating process, comprising the following steps: using a coating machine to coat the surface of a workpiece, before the coating is completed, reducing the outlet aperture of the coating machine, and using the coating machine to deterministically coat the surface of the workpiece according to the time to be coated corresponding to different areas of the workpiece surface after the previous coating, until the requirements are met. The process of the present invention can achieve high-precision coating of the thickness of the film layer on the surface of the workpiece, and can also achieve high-precision coating of the flatness of the film layer plane. At the same time, it has the advantages of simple process, low cost, easy implementation, and high coating efficiency. It can overcome the shortcomings of existing magnetron coating equipment and processes such as low film thickness uniformity or low surface flatness accuracy, and is also conducive to promoting large-scale production of high-precision semiconductor devices and improving surface quality. The process of the present invention has excellent coating effects on substrates and film layers of different materials, has high efficiency and high-precision coating capabilities, high use value, and good application prospects.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor coating, and relates to a magnetron sputtering coating process. Background Art

[0002] Semiconductor coating processes are key technologies for manufacturing semiconductor devices. They involve depositing a thin film of a specific pattern and material on the surface of a semiconductor to form the desired circuit pattern, ultimately enabling control of electronic devices. Semiconductor coating methods primarily include physical vapor deposition (PVD) and chemical vapor deposition (CVD). PVD involves depositing thin films on the surface of a workpiece through physical sputtering, and therefore process parameters such as temperature and pressure significantly influence the quality and uniformity of the surface coating. It is particularly important to note that in actual production, uniform scanning coating equipment is difficult to avoid inherent deviations in localized areas. As the number of coating cycles increases, small local errors gradually accumulate to form large local errors. However, existing uniform scanning coating equipment and processes struggle to achieve precise coating of localized areas of the workpiece, making post-coating calibration impossible. Therefore, when using PVD equipment such as scanning magnetrons to deposit films, developing a high-precision magnetron sputtering coating process is crucial. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a magnetron sputtering coating process with simple process, low cost, easy implementation, high coating efficiency and high precision in view of the deficiencies in the prior art.

[0004] In order to solve the above technical problems, the present invention adopts the following technical solutions.

[0005] A magnetron sputtering coating process comprises the following steps:

[0006] S1. Coating the workpiece surface with a coating machine;

[0007] S2. Before the coating is completed, stop the coating, reduce the outlet aperture of the coating machine, and deterministically coat the workpiece surface with the coating machine after reducing the outlet aperture according to the time distribution function T(x, y) of different areas on the workpiece surface; the time distribution function T(x, y) includes the time to be coated corresponding to different areas on the workpiece surface after the previous coating;

[0008] S3. Measure the film morphology on the surface of the workpiece after deterministic coating. If it does not meet the requirements, jump to S2 to perform the iterative process, otherwise end the coating process; if the iterative process of S2 cannot meet the requirements, further reduce the outlet aperture of the coating machine to continue deterministic coating and the corresponding iterative process until the requirements are met and end the coating process.

[0009] The above magnetron sputtering coating process is further improved, wherein in S2, before each deterministic coating is performed, the process further includes: obtaining a time distribution function T(x, y) of different areas on the workpiece surface; the method for obtaining the time distribution function T(x, y) of different areas on the workpiece surface includes the following steps:

[0010] (1) measuring the morphology of the film layer on the workpiece surface after the previous coating, and obtaining the morphology distribution function U(x,y) of the film layer on the workpiece surface after the previous coating;

[0011] (2) obtaining a distribution function V(x, y) of the thickness of the film to be coated on the surface of the workpiece after the previous coating according to the morphology distribution function U(x, y) of the film layer on the surface of the workpiece after the previous coating;

[0012] (3) According to the deposition function A(x, y) of the coating machine after reducing the outlet aperture and the distribution function V(x, y) of the thickness of the film to be coated on the workpiece surface after the previous coating, the coating time corresponding to different areas of the workpiece surface after the previous coating is obtained, and the time distribution function T(x, y) of different areas of the workpiece surface is obtained.

[0013] The above-mentioned magnetron sputtering coating process is further improved, in said (1), the morphology distribution function U(x, y) of the film layer on the surface of the workpiece after the previous coating includes a film thickness distribution function U1(x, y) or a surface morphology distribution function U2(x, y); the film thickness distribution function U1(x, y) includes the film layer thickness corresponding to different areas of the workpiece surface after the previous coating; the surface morphology distribution function U2(x, y) includes the film layer undulation morphology corresponding to different areas of the workpiece surface after the previous coating.

[0014] The above-mentioned magnetron sputtering coating process is further improved, in said (2), the distribution function V(x, y) of the thickness of the film to be coated on the surface of the workpiece after the previous coating includes the thickness of the film to be coated corresponding to different areas of the workpiece surface after the previous coating; the distribution function V(x, y) of the thickness of the film to be coated on the surface of the workpiece after the previous coating is obtained by the following method: taking the highest point of the film layer on the surface of the workpiece after the previous coating as the reference, respectively calculating the thickness of the film to be coated in other areas of the film layer surface, obtaining the thickness of the film to be coated corresponding to different areas of the workpiece surface, and obtaining the distribution function V(x, y) of the thickness of the film to be coated on the surface of the workpiece after the previous coating.

[0015] The above magnetron sputtering coating process is further improved, in said (3), the time to be coated corresponding to different areas of the workpiece surface after the previous coating is determined by a two-dimensional convolution calculation formula; said two-dimensional convolution calculation formula is:

[0016] V(x,y)=T(x,y)**A(x,y) (1),

[0017] In formula (1), V(x, y) is the distribution function of the thickness of the film layer to be coated on the workpiece surface after the previous coating, A(x, y) is the deposition function of the coating machine with the corresponding outlet aperture, and (x, y) is the coordinate of any point on the film surface.

[0018] The above-mentioned magnetron sputtering coating process is further improved, wherein the deposition function A(x, y) of the coating machine after the outlet aperture is reduced includes the deposition rate corresponding to the coating machine and the outlet aperture and process parameters that match when determining the deposition rate; the expression of the deposition function A(x, y) of the coating machine after the outlet aperture is reduced is:

[0019]

[0020] In formula (2), k is a constant related to the workpiece, coating material and related process parameters, u(x, y) is the topography distribution obtained by point-to-point subtraction of the topography data of the corresponding areas before and after coating, s is the coating area, and T is the coating time.

[0021] The above magnetron sputtering coating process is further improved, in said (3), the method for obtaining the deposition function A(x, y) of the coating machine after reducing the outlet aperture comprises the following steps:

[0022] (a) Measure the film morphology on the workpiece surface after the previous coating and determine the exit aperture of the coating machine;

[0023] (b) performing fixed-point coating on the substrate surface using a coating machine with a reduced outlet aperture, and obtaining topographical data of the fixed-point coating area on the substrate surface before and after coating;

[0024] (c) performing point-to-point subtraction on the topography data corresponding to the fixed-point coated area on the substrate surface before and after coating to obtain the film thickness and shape distribution of the fixed-point coated area on the substrate surface per unit time;

[0025] (d) Repeat steps (b) to (c) to optimize the process parameters of the coating machine until the film thickness and shape distribution of the fixed-point coating area on the substrate surface reach a stable state per unit time, obtain the deposition rate of the coating machine corresponding to the fixed-point coating area on the substrate surface and the process parameters matched when determining the deposition rate, and obtain the deposition function A(x,y) of the coating machine after reducing the outlet aperture.

[0026] The above-mentioned magnetron sputtering coating process is further improved. In (a), the outlet aperture of the coating machine is smaller than the width of the minimum concave area on the surface of the film layer after the previous coating; the outlet aperture of the coating machine is adjusted by a magnetic field isolation plate; and the magnetic field isolation plate is provided with through holes of different apertures.

[0027] The above magnetron sputtering coating process is further improved, wherein in (b), the shape and material of the substrate are the same as those of the workpiece;

[0028] The above-mentioned magnetron sputtering coating process is further improved. In (d), during the optimization of the process parameters of the coating machine, when the deviation between the measured thickness value of the film layer and the average value of the film layer thickness is within ±1%, it indicates that the corresponding film layer thickness has reached a stable state; when the measured flatness value of the film layer is less than 0.03 standard wavelengths, it indicates that the corresponding shape distribution has reached a stable state, and the standard wavelength is 632.8nm; the process parameters include at least one of pressure, process gas, temperature, and power.

[0029] The above magnetron sputtering coating process is further improved in that the thickness of the single coating on the workpiece surface is ≤ 95% of the remaining coating thickness on the workpiece surface.

[0030] The above magnetron sputtering coating process is further improved in that the thickness of the single coating on the workpiece surface is 90% to 95% of the remaining coating thickness on the workpiece surface.

[0031] The above-mentioned magnetron sputtering coating process is further improved. In the deterministic coating process, the process parameters and working environment adopted by the coating machine are consistent with the process parameters and working environment corresponding to when determining the deposition function A(x, y) of the coating machine.

[0032] The above magnetron sputtering coating process is further improved. If the iterative process of S2 cannot meet the requirements, the corresponding judgment basis is that the accuracy improvement change rate f of two adjacent processes is less than 10%; the accuracy improvement change rate f of two adjacent processes is calculated by formula (3):

[0033]

[0034] Compared with the prior art, the advantages of the present invention are:

[0035] In response to the shortcomings of existing magnetron coating equipment and processes such as low film thickness uniformity or low surface flatness accuracy, and the resulting defects that the large-scale production of high-precision semiconductor devices and the improvement of surface quality are greatly restricted, the present invention creatively proposes a magnetron sputtering coating process. Before coating is completed, the outlet aperture of the coating machine is reduced, and according to the time distribution function T(x, y) of different areas of the workpiece surface, the coating machine with the reduced outlet aperture is used to deterministically coat the workpiece surface. Specifically, according to the time to be coated corresponding to different areas of the workpiece surface after the previous coating, the workpiece surface is coated using existing equipment under the condition of a determined deposition rate. This not only can achieve high-precision coating of the film thickness on the workpiece surface, but also can achieve high-precision coating of the film plane flatness. At the same time, it has the advantages of simple process, low cost, easy implementation, and high coating efficiency. In addition, it has excellent coating effect for substrates and film layers of different materials, has high efficiency and high-precision coating capabilities, high use value, and good application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.

[0037] Figure 1 Schematic diagram of the structure of the coating equipment used in the embodiment of the present invention.

[0038] Figure 2 Schematic diagram of the structure of the magnetic field isolation plate used in an embodiment of the present invention.

[0039] Figure 3 Schematic diagram of the process of magnetron sputtering coating in an embodiment of the present invention. DETAILED DESCRIPTION

[0040] The present invention will be further described below in conjunction with the accompanying drawings and specific preferred embodiments, but the scope of protection of the present invention is not limited thereby.

[0041] The materials and instruments used in the following examples are all commercially available.

[0042] Existing magnetron sputtering coating equipment and processes suffer from shortcomings such as low film thickness uniformity and flatness accuracy, which significantly limits the large-scale production of high-precision semiconductor devices and the improvement of surface quality. To address these shortcomings, the present invention proposes a coating process that is simple and effectively improves coating accuracy. This process is not only suitable for improving the uniformity of film thickness on various materials, but can also be used to improve the surface flatness of film layers. By combining initial rapid scanning coating with a small-aperture deterministic coating process, and employing appropriate process steps and machining removal functions, efficient and high-precision coating can be achieved.

[0043] In order to better understand the innovation of the technical solution of the present invention, as one of the cases in the technical solution of the present invention, the following Figure 1 The coating device shown in the figure performs magnetron sputtering coating. During the coating process, the magnetic field isolation plate used to control the outlet aperture of the coating machine is as shown in FIG. Figure 2 As shown, the outlet aperture of the coating machine can be precisely adjusted by adjusting the aperture of the through hole provided on the magnetic field isolation plate.

[0044] In adopting Figure 1 When the device is used for magnetron sputtering coating, the coating accuracy of the scanning magnetron device depends on the distribution of the magnetic field. Based on the distribution of the magnetic field lines, it is difficult to achieve uniform intensity within a large size range. Therefore, its coating accuracy will be limited to a certain extent, and it is difficult to achieve high-precision requirements. In response to the above defects, when using the following method: Figure 1 and Figure 2 When the device shown in FIG. 1 performs magnetron sputtering coating, the corresponding magnetron sputtering coating process is as follows: Figure 3 As shown, the following steps are included:

[0045] S1, using Figure 1 The coating machine (conventional coating device) shown in the figure coats the surface of the workpiece, specifically, it uses the existing scanning magnetron equipment to perform rapid coating.

[0046] S2. When the coating reaches 95% of the target film thickness, stop coating and use Figure 2 The magnetic field isolation plate shown adjusts and reduces the exit aperture of the coating machine. According to the time distribution function T(x, y) of different areas on the workpiece surface, the coating machine with the reduced exit aperture is used to deterministically coat the workpiece surface, where the time distribution function T(x, y) includes the time to be coated corresponding to different areas on the workpiece surface after the previous coating.

[0047] In step S2 of this embodiment, the specific operation of deterministic coating is: according to the time distribution function T(x, y) of different areas on the workpiece surface, the coating starting point, point spacing and motion trajectory of the coating machine are determined, and then the speed distribution of the coating machine motion mechanism at each point on the film surface is obtained through a software program. Finally, the film surface is deterministically coated by controlling the coating machine motion mechanism according to a predetermined trajectory and speed.

[0048] In step S2 of this embodiment, before each deterministic coating is performed, the method further includes: obtaining the time distribution function T(x, y) of different areas on the workpiece surface, wherein the method for obtaining the time distribution function T(x, y) of different areas on the workpiece surface includes the following steps:

[0049] (1) Measuring the topography of the film layer on the workpiece surface after the previous coating, and obtaining the topography distribution function U(x, y) of the film layer on the workpiece surface after the previous coating, specifically: measuring the thickness of the film layer on the workpiece surface after the previous coating, and recording it as the film thickness distribution function U1(x, y). In another embodiment, the undulating topography of the film layer on the workpiece surface after the previous coating can also be measured, and recorded as the surface topography distribution function U2(x, y).

[0050] (2) Based on the morphology distribution function U(x,y) of the film layer on the surface of the workpiece after the previous coating, the distribution function V(x,y) of the thickness of the film to be coated on the surface of the workpiece after the previous coating is obtained, specifically: based on the film thickness distribution function U1(x,y) on the surface of the workpiece after the previous coating, with the highest point of the film layer surface as a reference, the thickness of the film to be coated in other areas of the film layer surface is calculated respectively, the thickness of the film to be coated corresponding to different areas of the workpiece surface is obtained, and the distribution function V1(x,y) of the thickness of the film to be coated on the surface of the workpiece after the previous coating is obtained. In another embodiment, it is also possible to based on the surface morphology distribution function U2(x,y) on the surface of the workpiece after the previous coating, with the highest point of the film layer surface as a reference, the thickness of the film to be coated in other areas of the film layer surface is calculated respectively, the thickness of the film to be coated corresponding to different areas of the workpiece surface is obtained, and the distribution function V2(x,y) of the thickness of the film to be coated on the surface of the workpiece after the previous coating is obtained.

[0051] (3) According to the deposition function A(x,y) of the coating machine after reducing the outlet aperture and the distribution function V(x,y) of the thickness of the workpiece surface to be coated after the previous coating, the coating time corresponding to different areas of the workpiece surface after the previous coating is obtained. Specifically, the coating time corresponding to different areas of the workpiece surface after the previous coating is calculated using a two-dimensional convolution calculation formula, wherein the two-dimensional convolution calculation formula is shown in formula (1), and the time distribution function T(x,y) of different areas of the workpiece surface is obtained. If the distribution function V1(x,y) is used, the corresponding time distribution function is T1(x,y); if the distribution function V2(x,y) is used, the corresponding time distribution function is T2(x,y), wherein the coating time results corresponding to the time distribution function T1(x,y) and the time distribution function T2(x,y) are the same.

[0052] V(x,y)=T(x,y)**A(x,y) (1),

[0053] In formula (1), V(x, y) is the distribution function of the thickness of the film layer to be coated on the workpiece surface after the previous coating, A(x, y) is the deposition function of the coating machine with the corresponding outlet aperture, and (x, y) is the coordinate of any point on the film surface.

[0054] In step (3) of this embodiment, the deposition function A(x, y) of the coating machine after the outlet aperture is reduced includes the deposition rate corresponding to the coating machine and the outlet aperture and process parameters that match the deposition rate. The deposition function A(x, y) of the coating machine after the outlet aperture is reduced is expressed as:

[0055]

[0056] In formula (2), k is a constant related to the workpiece, coating material, and related process parameters, u(x, y) is the topography distribution obtained by point-to-point subtraction of the topography data of the corresponding areas before and after coating, s is the coating area, and T is the coating time.

[0057] In step (3) of this embodiment, the method for obtaining the deposition function A(x, y) of the coating machine after reducing the outlet aperture includes the following steps:

[0058] (a) Measure the film morphology on the workpiece surface after the previous coating and determine the outlet aperture of the coating machine. Specifically, the outlet aperture of the coating machine should be smaller than the width of the smallest concave area on the film surface after the previous coating. At the same time, a set of process parameters (pressure, process gas, temperature, power, etc.) is optimized based on the workpiece and coating requirements.

[0059] (b) Using a coating machine with a reduced exit aperture, perform film coating on a substrate surface at a fixed point and at a fixed time, obtaining topographical data of the film-coated area on the substrate surface after coating. The substrate and the target workpiece have the same shape and material, and their topography should be as similar as possible. Prior to coating, the film layer topography on the substrate surface is measured to obtain topographical data of the film-coated area on the substrate surface before coating.

[0060] (c) performing point-to-point subtraction on the topography data corresponding to the fixed-point coated area on the substrate surface before and after coating to obtain the film thickness and shape distribution of the fixed-point coated area on the substrate surface per unit time;

[0061] (d) Repeat steps (b) to (c) to optimize the process parameters of the coating machine until the film thickness and shape distribution of the fixed-point coating area on the substrate surface reach a stable state per unit time. Specifically, in the process of optimizing the process parameters of the coating machine, when the deviation between the measured value of the film thickness and the average value of the film thickness is within ±1%, it indicates that the corresponding film thickness has reached a stable state. When the measured value of the flatness of the film layer is less than 0.03 standard wavelengths, it indicates that the corresponding shape distribution has reached a stable state. The standard wavelength is 632.8 nm. The deposition rate corresponding to the fixed-point coating area on the substrate surface and the process parameters matched when determining the deposition rate are obtained, and the deposition function A(x, y) of the coating machine after reducing the outlet aperture is obtained.

[0062] In the present invention, when coating is performed using coating machines with different outlet apertures, the above method can be used to obtain the deposition function A(x, y) of the coating machine with the corresponding outlet aperture.

[0063] S3. Measure the film topography on the workpiece surface after deterministic coating, specifically, measure the film thickness on the workpiece surface after deterministic coating. If the thickness uniformity does not meet the requirements, jump to S2 for iterative processing; otherwise, terminate the coating process. In another embodiment, the film topography of the workpiece surface after deterministic coating may also be measured. If the flatness of the shape does not meet the requirements, jump to S2 for iterative processing; otherwise, terminate the coating process.

[0064] In step S3 of this embodiment, if the iterative process of S2 cannot meet the requirements, the outlet aperture of the coating machine is further reduced to continue the deterministic coating and the corresponding iterative process. Specifically, when the accuracy improvement change rate f between two adjacent processes is less than 10%, it is necessary to further reduce the outlet aperture of the coating machine and return to step S2 to use the coating machine with a smaller outlet aperture to perform deterministic coating and the corresponding iterative process until the requirements are met and the coating process is terminated.

[0065] In this embodiment, in the deterministic coating process, the process parameters and working environment adopted by the coating machine are consistent with the process parameters and working environment corresponding to when the deposition function A(x, y) of the coating machine is determined.

[0066] In this embodiment, the accuracy improvement change rate f between two adjacent processes is calculated by formula (3):

[0067]

[0068] In the magnetron sputtering coating process of the present invention, before the coating is completed, the outlet aperture of the coating machine is lowered, and the coating machine with the lowered outlet aperture is used to deterministically coat the workpiece surface according to the time distribution function T(x, y) of different areas on the workpiece surface. Specifically, the workpiece surface is coated using existing equipment under the condition of a determined deposition rate based on the time to be coated corresponding to different areas on the workpiece surface after the previous coating. This can not only achieve high-precision coating of the thickness of the film layer on the workpiece surface, but also achieve high-precision coating of the flatness of the film layer plane. It also has the advantages of simple process, low cost, easy implementation, and high coating efficiency. In addition, it has excellent coating effects on substrates and film layers of different materials, and has high-efficiency and high-precision coating capabilities, high use value, and good application prospects.

[0069] The above description is only a preferred embodiment of the present invention and does not constitute any formal limitation to the present invention. Although the present invention has been disclosed as above in terms of a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can, without departing from the spirit and technical solution of the present invention, use the methods and technical contents disclosed above to make many possible changes and modifications to the technical solution of the present invention, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention, still fall within the scope of protection of the technical solution of the present invention.

Claims

1. A magnetron sputtering coating process, characterized in that: The following steps are involved: S1. Coating the workpiece surface with a coating machine; S2. Before the coating is completed, stop coating and reduce the outlet aperture of the coating machine. According to the time distribution function of different areas on the workpiece surface , the workpiece surface is deterministically coated using a coating machine with a reduced outlet aperture; the time distribution function Including the time to be coated corresponding to different areas of the workpiece surface after the previous coating; the thickness of the single coating on the workpiece surface is 90% to 95% of the remaining coating thickness on the workpiece surface; S3, measuring the film morphology on the workpiece surface after deterministic coating. If the requirements are not met, jump to S2 to perform the iterative process, otherwise terminate the coating process; if the iterative process of S2 cannot meet the requirements, further reduce the outlet aperture of the coating machine to continue deterministic coating and the corresponding iterative process until the requirements are met, and terminate the coating process; In said S2, before each deterministic coating is performed, it also includes: obtaining the time distribution function of different areas of the workpiece surface ; The time distribution function of different areas on the workpiece surface The method for obtaining includes the following steps: (1) Measure the morphology of the film layer on the workpiece surface after the previous coating, and obtain the morphology distribution function of the film layer on the workpiece surface after the previous coating ; (2) According to the morphology distribution function of the film layer on the workpiece surface after the previous coating , obtain the distribution function of the thickness of the coating on the workpiece surface after the previous coating ; (3) According to the deposition function of the coating machine after reducing the outlet aperture and the distribution function of the thickness of the coating on the workpiece surface after the previous coating , obtain the corresponding coating time of different areas on the workpiece surface after the previous coating, and obtain the time distribution function of different areas on the workpiece surface The coating time corresponding to different areas of the workpiece surface after the previous coating is determined by a two-dimensional convolution calculation formula; the two-dimensional convolution calculation formula is: （1）， In formula (1), is the distribution function of the thickness of the film layer to be coated on the workpiece surface after the previous coating, is the deposition function of the coater with the corresponding outlet aperture, (x, y) is the coordinate of any point on the film surface; The deposition function of the coating machine after reducing the outlet aperture The deposition function of the coating machine after reducing the outlet aperture is included. The expression is: （2）， In formula (2), k is a constant related to the workpiece, coating material and related process parameters, The morphology distribution is obtained by point-to-point subtraction of the morphology data of the corresponding areas before and after coating. s is the coating area, and T is the coating time.

2. The magnetron sputtering coating process according to claim 1, characterized in that: In (1), the morphology distribution function of the film layer on the surface of the workpiece after the previous coating is Including film thickness distribution function or surface topography distribution function ; The film thickness distribution function Contains the film thickness corresponding to different areas on the workpiece surface after the previous coating; the surface morphology distribution function Contains the film undulation morphology corresponding to different areas on the workpiece surface after the previous coating; In (2), the distribution function of the thickness of the coating on the workpiece surface after the previous coating is The thickness of the film to be coated corresponding to different areas of the workpiece surface after the previous coating; the distribution function of the thickness of the film to be coated on the workpiece surface after the previous coating It is obtained by the following method: taking the highest point of the film layer on the workpiece surface after the previous coating as the benchmark, the thickness of the film to be coated in other areas of the film surface is calculated respectively, the thickness of the film to be coated corresponding to different areas of the workpiece surface is obtained, and the distribution function of the thickness of the film to be coated on the workpiece surface after the previous coating is obtained. .

3. The magnetron sputtering coating process according to claim 2, characterized in that: In (3), the deposition function of the coating machine after reducing the outlet aperture is The method for obtaining includes the following steps: (a) Measure the film morphology on the workpiece surface after the previous coating and determine the outlet aperture of the coating machine; (b) performing targeted coating on the substrate surface using a coating machine with a reduced exit aperture, and obtaining topographical data of the targeted coated area on the substrate surface before and after coating; (c) performing point-to-point subtraction on the topography data corresponding to the fixed-point coated area on the substrate surface before and after coating to obtain the film thickness and shape distribution of the fixed-point coated area on the substrate surface per unit time; (d) Repeat steps (b) to (c) to optimize the process parameters of the coating machine until the film thickness and shape distribution of the fixed-point coating area on the substrate surface per unit time reach a stable state, obtain the deposition rate corresponding to the fixed-point coating area on the substrate surface of the coating machine and the process parameters matched when determining the deposition rate, and obtain the deposition function of the coating machine after reducing the outlet aperture .

4. The magnetron sputtering coating process according to claim 3, characterized in that: In (a), the outlet aperture of the coating machine is smaller than the width of the smallest concave area on the surface of the film layer after the previous coating; the outlet aperture of the coating machine is adjusted by using a magnetic field isolation plate; the magnetic field isolation plate is provided with through holes of different apertures; In (b), the shape and material of the substrate are the same as those of the workpiece; In (d), during the optimization of the coating machine process parameters, when the deviation between the measured thickness value of the film layer and the average value of the film layer thickness is within ±1%, it indicates that the corresponding film layer thickness has reached a stable state; when the measured flatness value of the film layer is less than 0.03 standard wavelengths, it indicates that the corresponding shape distribution has reached a stable state, and the standard wavelength is 632.8 nm; the process parameters include at least one of pressure, process gas, temperature, and power.

5. The magnetron sputtering coating process according to any one of claims 1 to 4, characterized in that: During the deterministic coating process, the process parameters and working environment used by the coating machine are consistent with the deposition function of the coating machine. The corresponding process parameters and working environment are consistent.

6. The magnetron sputtering coating process according to any one of claims 1 to 4, characterized in that: If the iterative process of S2 cannot meet the requirements, the corresponding judgment basis is that the accuracy improvement change rate f of two adjacent processes is less than 10%; the accuracy improvement change rate f of two adjacent processes is calculated by formula (3): （3）。

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