Atomic layer deposition equipment

Abstract

The present application discloses an atomic layer deposition device. The atomic layer deposition device includes a negative pressure pump and a process chamber. The negative pressure pump is connected to the process chamber through a first air flow line and a second air flow line, respectively. The first air flow line and the second air flow line are respectively provided with a first valve and a second valve, and at least one of the first air flow line and the second air flow line is provided with a cold trap in series. The process chamber is also provided with a first air inlet, a second air inlet and a third air inlet, which are used to supply a first process gas, a second process gas and an inert protective gas into the process chamber, respectively. In the above manner, the present application can reduce the generation of dust in the atomic layer deposition device, reduce pipeline blockage and equipment damage.

Description

Technical Field

[0001] The present application relates to the technical fields of photovoltaic devices and semiconductor technologies, and in particular to atomic layer deposition equipment. Background Art

[0002] In the fields of photovoltaic equipment and semiconductor technology, vacuum coating of semiconductors is frequently required. During this process, large amounts of dust are often generated due to mixing of gases. This dust enters the pump tube along with the gas, flows through valves, and ultimately enters the vacuum pump. As a result, the valves and vacuum pumps used are prone to clogging and damage, requiring frequent downtime for maintenance, significantly impacting machine availability. Summary of the Invention

[0003] The embodiments of the present application provide an atomic layer deposition device that can reduce the generation of dust in the atomic layer deposition device, reduce pipeline blockage and equipment damage.

[0004] An embodiment of the present application provides an atomic layer deposition apparatus. The atomic layer deposition apparatus includes a negative pressure pump and a process chamber. The negative pressure pump is connected to the process chamber via a first airflow line and a second airflow line, respectively. The first airflow line and the second airflow line are respectively provided with a first valve and a second valve, and at least one of the first airflow line and the second airflow line is provided with a cold trap in series. The process chamber is also provided with a first air inlet, a second air inlet, and a third air inlet for respectively supplying a first process gas, a second process gas, and an inert protective gas into the process chamber.

[0005] The beneficial effects of the present application are as follows: unlike the prior art, by arranging the first process gas to be discharged from the process chamber through the first airflow pipeline after the reaction, and the second process gas to be discharged from the process chamber through the second airflow pipeline after the reaction, the first process gas and the second process gas can be reduced from meeting each other in the airflow pipeline and the negative pressure pump, thereby reducing the generation of dust. By arranging the first valve and the second valve, when the first process gas needs to be discharged, the first valve can be opened and the second valve can be closed; when the second process gas needs to be discharged, the second valve can be opened and the first valve can be closed, thereby further reducing the possibility of the first process gas and the second process gas meeting each other, thereby reducing the generation of dust. The first valve and the second valve are in an interlocking logical relationship. At least one of the first airflow pipeline and the second airflow pipeline is provided with a cold trap in series. The cold trap can collect the first process gas and the second process gas flowing through, and the collected process gases can be regenerated and recycled. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 is a schematic diagram of an embodiment of an atomic layer deposition apparatus of the present application;

[0007] Figure 2 is a schematic diagram of another embodiment of the atomic layer deposition apparatus of the present application;

[0008] Figure 3 Schematic diagram of another embodiment of the atomic layer deposition apparatus of the present application. DETAILED DESCRIPTION

[0009] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0010] Vacuum coating processes often generate large amounts of dust. This dust enters the pump tube along with the gas, flows through the valve, and ultimately enters the vacuum pump. As a result, the valve components and vacuum pump used are easily damaged, requiring frequent maintenance downtime, significantly impacting machine availability.

[0011] In related technologies, vacuum coating equipment has installed a filter (or catcher) in front of the vacuum pump or valve body to solve this problem. However, dust is often captured by adding a dust flow and multiple layers of filter screens. The disadvantage is that the flow resistance of the pump pipe system is increased. As the equipment works for a longer time, dust accumulates inside the filter, and the flow resistance of the filter continues to increase. This will cause the effective pumping speed of the reaction chamber to continue to decrease, thereby affecting the stability of the process and the repeatability of large-scale coating quality. In order to improve the above technical problems, the present application can provide the following embodiments.

[0012] The present application proposes an atomic layer deposition device 1. The atomic layer deposition device 1 includes a process chamber 10 and a negative pressure pump 20. The negative pressure pump 20 can continuously form a vacuum or negative pressure (relative vacuum) in the pump body, thereby providing power for the flow of gas in the pipeline in the atomic layer deposition device 1. The process chamber 10 can accommodate parts to be coated, such as silicon wafers and wafers, that need to undergo a coating process. As different gas phases are introduced into the process chamber 10, and with the joint participation of other equipment such as heaters in the process chamber 10, a thin film can be deposited on the surface of the part to be coated.

[0013] In one embodiment, see Figures 1 to 3The process chamber 10 is provided with a first air inlet 35, a second air inlet 36 and a third air inlet 37, which are used to supply the first process gas, the second process gas and the inert protective gas into the process chamber 10 respectively. In the coating process, the process chamber 10 needs to input two different process gases, namely the first process gas and the second process gas. The first process gas and the second process gas are introduced into the process chamber 10 through the first air inlet 35 and the second air inlet 36 in a time sequence, and the first process gas and the second process gas are discharged from the process chamber 10 after the reaction in a time sequence. In the process of switching from introducing the first process gas to introducing the second process gas and from introducing the second process gas to introducing the first process gas, it is necessary to introduce an inert protective gas through the third air inlet 37 to discharge the first process gas or the second process gas remaining in the process chamber 10 out of the process chamber 10, thereby reducing the possibility of the first process gas and the second process gas meeting in the process chamber 10, and ensuring the normal progress of the next deposition process. Optionally, the first air inlet 35, the second air inlet 36 and the third air inlet 37 can be connected to the process chamber 10 through a common pipeline, so that the process chamber 10 can be connected to the first air inlet 35, the second air inlet 36 and the third air inlet 37 through a common pipeline, so that the number of connecting ports opened in the process chamber 10 can be reduced, thereby reducing the manufacturing difficulty of the process chamber 10.

[0014] In some embodiments, the first process gas is composed of an inert protective gas mixed with a first reactive gas. The first reactive gas can be any one of trimethylaluminum, titanium tetrachloride, or hafnium tetrachloride.

[0015] In some embodiments, the second process gas is composed of an inert protective gas mixed with a second reactive gas, which can be any one of water vapor, titanium nitride, or hafnium dioxide.

[0016] In some embodiments, the inert shielding gas may be nitrogen or argon. Nitrogen or argon are chemically stable and do not react with the process gas or the workpiece to be coated during the purge process. Alternatively, the inert shielding gas may be a chemically inert gas, such as a gaseous substance corresponding to a Group 0 element on the periodic table, such as helium, neon, krypton, xenon, or radon.

[0017] In one embodiment, the process chamber 10 and the negative pressure pump 20 are connected to the process chamber 10 via a first gas flow line 31 and a second gas flow line 32, respectively. Since the first process gas and the second process gas react and generate dust when they meet, the first process gas is discharged from the process chamber 10 via the first gas flow line 31 after the reaction, and the second process gas is discharged from the process chamber 10 via the second gas flow line 32 after the reaction. This reduces the interaction between the first and second process gases and thus reduces the generation of dust.

[0018] In one embodiment, the first airflow conduit 31 and the second airflow conduit 32 are respectively provided with a first valve 33 and a second valve 34. The provision of the first valve 33 and the second valve 34 allows the first valve 33 to be opened and the second valve 34 to be closed when the first process gas needs to be discharged; and the second valve 34 to be opened and the first valve 33 to be closed when the second process gas needs to be discharged, thereby further reducing the possibility of the first and second process gases intersecting and thereby reducing the generation of dust. The first valve 33 and the second valve 34 are in an interlocking logical relationship.

[0019] Furthermore, in one embodiment, in combination Figures 1 to 3 At least one of the first gas flow pipeline 31 and the second gas flow pipeline 32 is connected in series with a cold trap 40. The cold trap 40 can collect the first process gas and the second process gas flowing therethrough, and the collected process gas can be recycled and reused.

[0020] The following is an exemplary description of a process method for coating using the atomic layer deposition device 1 of the present application. The interlocking logical relationship between the first valve 33 and the second valve 34 can be found in the description of the implementation method.

[0021] S10: The negative pressure pump 20 evacuates the process chamber 10 through the first air flow pipeline 31 and / or the second air flow pipeline 32.

[0022] When the process chamber 10 is undergoing a coating process, since air will affect the coating process, the process chamber 10 needs to be vacuumed to ensure the purity of the gas phase in the process chamber 10 during the coating reaction and to ensure the quality of the coating. The negative pressure pump 20 is connected to the process chamber 10 through the first airflow line 31 and the second airflow line 32, so the process chamber 10 can be vacuumed through the first airflow line 31 or the second airflow line 32. For example, the first valve 33 is opened and the second valve 34 is closed, and the negative pressure pump 20 vacuums the process chamber 10 through the first airflow line 31. For another example, when the second valve 34 is opened and the first valve 33 is closed, the negative pressure pump 20 vacuums the process chamber 10 through the second airflow line 32. For another example, when both the first valve 33 and the second valve 34 are opened, the process chamber 10 is vacuumed through the first airflow line 31 and the second airflow line 32.

[0023] S20: The first valve switching is to switch the first valve 33 to an open state and the second valve 34 to a closed state.

[0024] After evacuating the process chamber 10, the first process gas can be introduced into the process chamber 10 to perform the coating process. When the first process gas is introduced into the process chamber 10, the reacted first process gas needs to be discharged through the first gas flow line 31. Therefore, before introducing the first process gas, the first valve 33 needs to be switched to the open state and the second valve 34 needs to be switched to the closed state.

[0025] Furthermore, during the coating process, the first process gas and the second process gas need to be alternately introduced and circulated multiple times. After the second process gas is introduced and the process chamber 10 is cleaned and purged by introducing an inert protective gas, the process can return to step S20 to form a cycle of alternating introduction of the two process gases. During the second process gas introduction, the second valve 34 is in an open state and the first valve 33 is in a closed state. Therefore, before the first process gas is introduced again, the valves need to be switched, with the first valve 33 switched to an open state and the second valve 34 switched to a closed state.

[0026] In one embodiment, the first valve switching timing is within the duration of the previous cleaning and purging step. This setting can reduce the possibility of the first process gas entering the second airflow pipeline 32 during the valve switching period. Optionally, the first valve switching timing is in the second half of the duration of the previous cleaning and purging step. Since the second process gas introduced previously needs to be purged during the cleaning and purging step, if the valve switching is performed too early, the second process gas introduced previously may not be completely purged and enter the first airflow pipeline 31. Therefore, by setting the first valve switching timing to the second half of the duration of the previous cleaning and purging step, the encounter between the two process gases can be reduced, thereby reducing the generation of dust.

[0027] In one embodiment, during the first valve switching step, the first valve 33 is opened earlier than the second valve 34 is closed. In the atomic layer deposition apparatus 1 of the present application, the process chamber 10 requires continuous exhaust during operation. Therefore, the negative pressure pump 20 is also in a continuous working state. Since the negative pressure pump 20 and the process chamber 10 are connected via the first airflow pipeline 31 and the second airflow pipeline 32, and the valve switching requires a certain amount of time, if the first valve 33 is not fully opened and the second valve 34 is already closed, the airflow resistance in the pipeline will be too large, which may cause damage to the negative pressure pump 20. In order to improve the above situation, by setting the time when the first valve 33 is opened earlier than the time when the second valve 34 is closed, it can be ensured that the first valve 33 has sufficient time to open before the second valve 34 begins to close, thereby avoiding excessive airflow resistance in the pipeline. Even if the first valve 33 and the second valve 34 are open at the same time, the airflow resistance in the pipeline is reduced and will not affect the negative pressure pump 20. Moreover, the valve switching timing is in the second half of the duration of the cleaning and purging step of introducing the inert protective gas. The gas flow in the pipeline is the inert protective gas. Even if the first valve 33 and the second valve 34 are in the open state at the same time, the first process gas and the second process gas will not meet.

[0028] S30: The first process gas is introduced and continuously introduced through the first gas inlet 35. After the valve is switched, the first process gas can be introduced into the process chamber 10 for the atomic layer deposition process. The first valve 33 is opened, and the first process gas is discharged through the first gas flow line 31 to the negative pressure pump 20. The principles of atomic layer deposition can be at least referenced to the prior art and will not be further described.

[0029] S40: First cleaning and purging, continuously introducing inert protective gas through the third air inlet duct 37.

[0030] After the first process gas is introduced, the process chamber 10 and the pipeline need to be cleaned and purged before the second process gas is introduced for the next deposition process. Continuous introduction of inert protective gas through the third gas inlet 37 can exhaust the residual first process gas in the process chamber 10 and the pipeline.

[0031] In one embodiment, the duration of the inert protective gas during the first cleaning purge is longer than the duration of the first process gas. This arrangement can ensure the cleaning purge effect and further reduce the encounter between the two process gases.

[0032] S50: Second valve switching, switching the first valve 33 to a closed state and switching the second valve 34 to an open state.

[0033] After the first cleaning and purging, a second process gas needs to be introduced into the process chamber 10 for the deposition process. When the second process gas is introduced into the process chamber 10, the reacted second process gas needs to be discharged through the second gas flow line 32. Therefore, before introducing the second process gas, the second valve 34 needs to be switched to the open state and the first valve 33 needs to be switched to the closed state.

[0034] In one embodiment, the second valve switching is performed during the duration of the first cleaning and purging step. This configuration can reduce the possibility of the second process gas entering the first airflow conduit 31 during the valve switching period. Alternatively, the second valve switching is performed during the second half of the duration of the first cleaning and purging step. Since the first process gas needs to be purged during the cleaning and purging step, if the valve switching is performed too early, the first process gas may not be completely purged and enter the second airflow conduit 32. Therefore, by setting the second valve switching to the second half of the duration of the first cleaning and purging step, the encounter between the two process gases can be reduced, thereby reducing the generation of dust.

[0035] In one embodiment, during the second valve switching step, the second valve 34 is opened earlier than the first valve 33 is closed. In the atomic layer deposition apparatus 1 of the present application, the process chamber 10 requires continuous exhaust during operation. Therefore, the negative pressure pump 20 is also in a continuous working state. Since the negative pressure pump 20 and the process chamber 10 are connected via the first air flow line 31 and the second air flow line 32, and the valve switching requires a certain amount of time, if the second valve 34 is not fully opened and the first valve 33 is already closed, the air flow resistance in the line will be too large, which may cause damage to the negative pressure pump 20. In order to improve the above situation, by setting the timing of the second valve 34 opening earlier than the timing of the first valve 33 closing, it is possible to ensure that the second valve 34 has sufficient opening time before the first valve 33 starts to close, thereby avoiding excessive air flow resistance in the line. Even if the first valve 33 and the second valve 34 are open at the same time, the air flow resistance in the line is reduced and will not affect the negative pressure pump 20. Furthermore, the valve is switched during the duration of the cleaning and purging step of the inert protective gas, and the gas flow in the pipeline is the inert protective gas. Even if the first valve 33 and the second valve 34 are open at the same time, the first process gas and the second process gas will not meet.

[0036] S60: The second process gas is introduced and the second process gas is continuously introduced through the second air inlet 36 .

[0037] After the second valve switching, the second process gas is introduced into the process chamber 10 to perform the atomic layer deposition process. The second process gas can be discharged from the second gas flow line 32 to the negative pressure pump 20 through the opened second valve 34 .

[0038] S70: Second cleaning and purging, continuously introducing inert protective gas through the third air inlet duct 37.

[0039] After the second process gas is introduced, the process chamber 10 and the pipeline need to be cleaned and purged before the first process gas is introduced for the next deposition process. Continuous introduction of inert protective gas through the third gas inlet 37 can exhaust the second process gas remaining in the process chamber 10 and the pipeline.

[0040] In one embodiment, the duration of the inert protective gas in the second cleaning purge is longer than the duration of the second process gas inlet. This arrangement can ensure the cleaning purge effect and further reduce the encounter between the two process gases.

[0041] S80: Return to execute the first valve switching step.

[0042] In a complete coating process, the first process gas and the second process gas need to be introduced alternately multiple times in a cycle. From step S20 to step S70, the first process gas and the second process gas are introduced alternately once. Steps S20 to S70 can be repeated to complete the complete coating process cycle.

[0043] S90: After repeatedly executing steps S20 to S70, the cold trap 40 is regenerated.

[0044] After a preset number of cycles, the condensed material in the cold trap 40 is insufficient, and the cold trap 40 needs to be regenerated. Regenerating the cold trap 40 can be achieved by heating the cold trap 40 to evaporate or sublime the condensed material, thereby draining it out of the cold trap 40. The material draining out of the cold trap 40 can be recycled, reducing the cost of the coating process.

[0045] In one embodiment, combining Figures 1 to 3 , at least one of the first airflow pipeline 31 and the second airflow pipeline 32 is provided with a cold trap 40 in series. Specifically, if the first process gas and the second process gas are discharged directly after the reaction, on the one hand, it may pollute the environment, and on the other hand, it may cause waste of raw materials. By providing a cold trap 40 in series with at least one of the first airflow pipeline 31 and the second airflow pipeline 32, the first process gas or the second process gas can be collected and reused. At least one of the first airflow pipeline 31 and the second airflow pipeline 32 is provided with a cold trap 40 in series. There are three situations below, each of which is illustrated by way of example.

[0046] The first case: combination Figure 1 , the first air flow pipeline 31 is provided with a cold trap 40, and there are two first valves 33, which are respectively arranged in series at both ends of the cold trap 40 in the first air flow pipeline 31. The first process gas is composed of an inert protective gas mixed with a first reaction gas. The first reaction gas can be any one of trimethylaluminum, titanium tetrachloride or hafnium tetrachloride. When the first process gas flows through the cold trap 40, the first reaction gas can be liquefied or even sublimated. Therefore, when the first process gas passes through the cold trap 40, the first reaction gas therein can be captured by the cold trap 40, and the inert protective gas can be discharged through the negative pressure pump 20. The temperature of the cold trap 40 is higher than the boiling point of the inert protective gas and lower than the melting point of the first reaction gas. Furthermore, since the temperature of the cold trap 40 is lower than that of the process chamber 10, the first air flow pipeline 31 and the second air flow pipeline 32, the cold trap 40 is also in a negative pressure state. The first valves 33 at both ends of the cold trap 40 seal both ends of the cold trap 40 when closed, thereby preventing the tail gas discharged from the second air flow pipeline 32 from flowing into the cold trap 40 and preventing the two process gases from meeting in the cold trap 40 .

[0047] The second case: combined Figure 2 , the second air flow pipeline 32 is provided with a cold trap 40, and there are two second valves 34, which are respectively arranged in series at both ends of the cold trap 40 in the second flow pipeline. The second process gas is composed of an inert protective gas mixed with a second reaction gas. The second reaction gas can be any one of water vapor, titanium nitride or hafnium dioxide. When the second process gas flows through the cold trap 40, the second reaction gas can be liquefied or even sublimated. As a result, when the second process gas passes through the cold trap 40, the second reaction gas therein can be captured by the cold trap 40, and the inert protective gas can be discharged through the negative pressure pump 20. The temperature of the cold trap 40 is higher than the boiling point of the inert protective gas and lower than the melting point of the second reaction gas. Furthermore, since the temperature of the cold trap 40 is lower than that of the process chamber 10, the first air flow pipeline 31 and the second air flow pipeline 32, the cold trap 40 is also in a negative pressure state. When the second valve 34 is closed, both ends of the cold trap 40 are sealed, thereby preventing the tail gas discharged from the first air flow pipeline 31 from flowing into the cold trap 40 and preventing the two process gases from meeting in the cold trap 40 .

[0048] The third case: combination Figure 3Both the first airflow pipeline 31 and the second airflow pipeline 32 are provided with a cold trap 40; there are two first valves 33, one each connected in series to the ends of the cold trap 40 in the first airflow pipeline 31; there are two second valves 34, one each connected in series to the ends of the cold trap 40 in the second airflow pipeline. The first process gas is composed of an inert protective gas mixed with a first reactive gas. The first reactive gas can be any one of trimethylaluminum, titanium tetrachloride, or hafnium tetrachloride. The second process gas is composed of an inert protective gas mixed with a second reactive gas. The second reactive gas can be any one of water vapor, titanium nitride, or hafnium dioxide.

[0049] By providing a cold trap 40 in the first gas flow pipeline 31 and the second gas flow pipeline 32, the first reaction gas and the second reaction gas can be captured by the cold trap 40. By providing two first valves 33 and two second valves 34, both ends of the cold trap 40 can be closed or opened simultaneously. The first valves 33 and the second valves 34 are opened alternately, that is, when the two first valves 33 are open, the two second valves 34 are closed; or when the two first valves 33 are closed, the two second valves 34 are open, thereby preventing the two process gases from meeting in the cold trap 40.

[0050] In one embodiment, the atomic layer deposition apparatus 1 includes multiple process chambers 10, each of which corresponds to a vacuum pump 20, as well as a first airflow line 31 and a second airflow line 32 between the vacuum pump 20 and the process chamber 10. In other words, each process chamber 10 is exhausted via an independent vacuum pump 20 and independent airflow line. This arrangement prevents the coating processes in the process chambers 10 from interfering with each other, and both vacuuming and exhausting can be achieved by the same vacuum pump 20.

[0051] Based on the previous embodiment, each process chamber 10 is provided with at least one corresponding cold trap 40, and the atomic layer deposition apparatus 1 further includes a heat exchanger 50, which is connected to each of the multiple cold traps 40 via pipelines. Because the cooling pipelines of the cold traps 40 are not connected to the first airflow pipeline 31 or the second airflow pipeline 32, the cold traps 40 can be cooled by the same heat exchanger 50, thereby reducing the cost of the atomic layer deposition apparatus 1.

[0052] On the basis of the above, the atomic layer deposition apparatus 1 further includes a first common pipeline 38 and a second common pipeline 39. One end of the first common pipeline 38 is connected to the process chamber 10, and the other end is connected to the first gas flow pipeline 31 and the second gas flow pipeline 32 respectively; one end of the second common pipeline 39 is connected to the negative pressure pump 20, and the other end is connected to the first gas flow pipeline 31 and the second gas flow pipeline 32 respectively. Such an arrangement can reduce the number of communication ports provided on the process chamber 10, which is conducive to improving the airtightness of the process chamber 10 and reducing the manufacturing cost of the process chamber 10. It can also reduce the interfaces required for the negative pressure pump 20, reducing the requirements for the specifications of the negative pressure pump 20.

[0053] In one embodiment, the atomic layer deposition apparatus 1 further includes an exhaust gas treatment device 70, which is in communication with the negative pressure pump 20. The exhaust gas treatment device 70 is capable of treating the first process gas and the second process gas in the first gas flow line 31 and the second gas flow line 32 that are not collected by the cold trap 40, thereby preventing the process gases from polluting the environment.

[0054] In one embodiment, the atomic layer deposition equipment 1 also includes a pressure detection device 60, which is arranged on the process chamber 10 to detect the pressure in the process chamber 10, thereby providing data support for the vacuum state of the negative pressure pump 20 and the injection conditions of the process gas.

[0055] On the basis of the above embodiment, the structure of the cold trap 40 can be referred to the following exemplary description. The cold trap 40 includes a shell having a cooling cavity, the shell being provided with an air inlet and an air outlet, and the cold trap 40 is connected in series with the first air flow pipeline 31 or the second air flow pipeline 32 through the air inlet and the air outlet. The first process gas or the second process gas can flow through the cooling cavity through the air inlet and the air outlet. The cold trap 40 also includes a cooling pipeline, which is coiled in the cooling cavity and extends out of the shell to form a cooling inlet and a cooling outlet. The heat exchanger 50 can circulate coolant in the cooling pipeline through the cooling inlet and the cooling outlet, thereby reducing the temperature of the cooling cavity and realizing the collection of process gas.

[0056] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An atomic layer deposition device, characterized in that: include: a negative pressure pump and a process chamber, wherein the negative pressure pump is connected to the process chamber through a first airflow pipeline and a second airflow pipeline, respectively, the first airflow pipeline and the second airflow pipeline are respectively provided with a first valve and a second valve, and at least one of the first airflow pipeline and the second airflow pipeline is provided with a cold trap in series, and the process chamber is further provided with a first air inlet channel, a second air inlet channel and a third air inlet channel for respectively supplying a first process gas, a second process gas and an inert protective gas into the process chamber; When the first valve is in an open state and the second valve is in a closed state, a first process gas is introduced into the process chamber; introducing an inert gas to purge the process chamber; During the second half of the time when the inert gas is introduced to purge the process chamber, the second valve is switched to an open state and the first valve is switched to a closed state; wherein the second valve is opened earlier than the first valve is closed; When the second valve is in an open state and the first valve is in a closed state, a second process gas is introduced into the process chamber.

2. The atomic layer deposition apparatus according to claim 1, wherein: The first air flow pipeline is provided with the cold trap, and there are two first valves, which are respectively connected in series at the two ends of the cold trap in the first air flow pipeline.

3. The atomic layer deposition apparatus according to claim 1, wherein: The second air flow pipeline is provided with the cold trap, and there are two second valves, which are respectively connected in series at the two ends of the cold trap in the second flow pipeline.

4. The atomic layer deposition apparatus according to claim 1, wherein: The first air flow pipeline and the second air flow pipeline are both provided with the cold trap; There are two first valves, which are respectively arranged at both ends of the cold trap in the first air flow pipeline; There are two second valves, which are respectively arranged at the two ends of the cold trap in the second flow pipeline.

5. The atomic layer deposition apparatus according to claim 1, wherein: The atomic layer deposition equipment includes a plurality of process chambers, each of the process chambers corresponds to a negative pressure pump, and a first airflow pipeline and a second airflow pipeline between the negative pressure pump and the process chamber.

6. The atomic layer deposition apparatus according to claim 5, wherein: Each process chamber is provided with at least one cold trap. The atomic layer deposition equipment further includes a heat exchanger. The heat exchanger is respectively connected to the plurality of cold traps through pipelines.

7. The atomic layer deposition apparatus according to claim 1, wherein: The atomic layer deposition apparatus further includes a first common pipeline and a second common pipeline, wherein one end of the first common pipeline is connected to the process chamber, and the other end of the first common pipeline is connected to the first gas flow pipeline and the second gas flow pipeline respectively; One end of the second common pipeline is communicated with the negative pressure pump, and the other end is communicated with the first air flow pipeline and the second air flow pipeline respectively.

8. The atomic layer deposition apparatus according to claim 1, wherein: The cold trap comprises a shell having a cooling cavity, the shell being provided with an air inlet and an air outlet, the cold trap being connected in series with the first air flow pipeline and / or the second air flow pipeline via the air inlet and the air outlet; The cold trap further includes a cooling pipeline, which is coiled in the cooling cavity and extends out of the shell to form a cooling inlet and a cooling outlet.

9. The atomic layer deposition apparatus according to claim 1, wherein: The atomic layer deposition equipment further includes an exhaust gas treatment device, which is connected to the negative pressure pump.

10. The atomic layer deposition apparatus according to claim 1, wherein: The atomic layer deposition equipment further includes a pressure detection device, which is disposed on the process chamber to detect the pressure in the process chamber.

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