A patterned zif-8 film and a method for preparing the same

Abstract

The application discloses a kind of patterned ZIF-8 film and preparation method thereof, preparation method includes the following steps: configuration zinc-based resin precursor solution;Using spin coater zinc-based resin precursor solution is uniformly diffused to the surface of silicon wafer and film formation, then using long wave ultraviolet transmission patterned mask plate is irradiated to the film on the surface of silicon wafer, makes the film on the surface of silicon wafer solidification generation patterned zinc acrylate-acrylic acid copolymer organic film, then patterned zinc acrylate-acrylic acid copolymer organic film is washed;Using high-temperature heat treatment method patterned zinc acrylate-acrylic acid copolymer organic film is converted into patterned porous zinc oxide film;Using chemical vapor deposition method patterned porous zinc oxide film and 2-methyl imidazole powder are reacted and converted into patterned ZIF-8 film.The application discloses a kind of patterned ZIF-8 film and preparation method thereof, without using photoresist of conventional photolithography process, preparation process is simple, raw material utilization rate is high, almost no by-product and industrial waste.

Description

Technical Field

[0001] This invention relates to a patterned ZIF-8 thin film and its preparation method, belonging to the field of metal-organic framework thin film preparation technology. Background Technology

[0002] Zeolitic imidazolate framework (ZIF)-8 is a metal-organic framework (MOF) consisting of a crystalline structure of metal ions and organic ligands. Due to its unique porous structure and high specific surface area, ZIF-8 thin films exhibit excellent application potential in various fields such as gas separation, molecular separation, and membrane separation technology. Furthermore, ZIF-8 thin films can physically adsorb specific gas molecules, enabling the detection and monitoring of these molecules. Further, microfabrication of ZIF-8 thin films, i.e., patterning, can create optical and electronic devices and molecular films with unique functions. Patterning of ZIF-8 thin films mainly includes methods such as photolithography and functionalized surfaces. Photolithography uses a radiation source and a patterned mask defined by transparent and opaque regions, along with photoresist. During photolithography, not only are specific solvents used to remove residual photoresist covering the ZIF-8 film, but acid solutions are also used to etch away exposed ZIF-8 areas. One approach to functionalized surfaces combines microcontact printing of functionalized self-assembled monolayers with liquid phase epitaxy to generate two-dimensional patterned ZIF-8 thin films. This method is complex, requires stringent processing techniques, is difficult to implement in large-scale industrial production, and generates significant amounts of solution waste. Summary of the Invention

[0003] The purpose of this invention is to overcome the shortcomings of the prior art and provide a patterned ZIF-8 thin film and its preparation method, which does not require the use of photoresist in conventional photolithography processes, has a simple preparation process, high raw material utilization, and almost no by-reaction products and industrial waste.

[0004] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows:

[0005] A method for preparing patterned ZIF-8 thin films includes the following steps:

[0006] Prepare zinc-based resin precursor solution;

[0007] The zinc-based resin precursor solution is uniformly diffused onto the silicon wafer surface using a spin coater to form a film. Then, long-wave ultraviolet light is used to irradiate the film on the silicon wafer surface through a patterned mask to cure the film on the silicon wafer surface and generate a patterned zinc acrylate-acrylic acid copolymer organic film. The patterned zinc acrylate-acrylic acid copolymer organic film is then washed.

[0008] Patterned zinc acrylate-acrylic acid copolymer organic film is converted into patterned porous zinc oxide film by high temperature heat treatment.

[0009] A patterned porous zinc oxide film was reacted with 2-methylimidazole powder using chemical vapor deposition to transform the patterned porous zinc oxide film into a patterned ZIF-8 film.

[0010] The preparation of the zinc-based resin precursor solution includes: adding zinc acrylate powder and 2-methylimidazole powder to an acrylic acid solution, then subjecting the mixture to ultrasonic vibration to obtain a mixed solution of the three, then adding a photoinitiator to the prepared mixed solution, followed by magnetic stirring and ultrasonic vibration to form a uniformly dispersed zinc-based resin precursor solution.

[0011] The mass ratio of zinc acrylate powder to 2-methylimidazole powder ranges from 1.1 to 1.3:1; the photoinitiator accounts for 2 to 3% of the total mass fraction of the zinc-based resin precursor solution, and the photoinitiator is a mixture of benzoyl and 2-phenylbenzyl-2-dimethylamine-1-(4-morpholinobenzylphenyl)butanone of equal mass.

[0012] Before uniformly diffusing the zinc-based resin precursor solution onto the silicon wafer surface, the silicon wafer is pretreated, including: placing the silicon wafer on a fixed support, first cleaning it with ultrasonic vibration using soapy water, then cleaning it with ultrasonic vibration using deionized water, and finally cleaning it with ultrasonic vibration using anhydrous ethanol. After the silicon wafer is dried, it is cleaned with the spin-coated side facing up using a plasma cleaner. After cleaning, it is blown with nitrogen gas.

[0013] The spin coater's rotation speed is set between 3000 and 5000 rpm, its acceleration is 1000 rpm, and its spin coating time is set between 10 and 15 seconds.

[0014] The wavelength range of long-wave ultraviolet radiation is 340–380 nanometers, and the duration of long-wave ultraviolet radiation irradiation is 30–40 seconds.

[0015] The washing process includes: developing the patterned zinc acrylate-acrylic acid copolymer organic film in acrylic acid for 4–6 minutes, followed by developing it in propylene glycol methyl ether acetate for 4–6 minutes. The high-temperature heat treatment method uses a muffle furnace, with a firing temperature range of 450–650 degrees Celsius and a firing time range of 20–30 minutes.

[0016] The reaction temperature range of chemical vapor deposition is 100-110 degrees Celsius, and the reaction time range is 2-3 hours. After the chemical vapor deposition reaction is completed, the patterned ZIF-8 film is taken out at 100-110 degrees Celsius. Then, the patterned ZIF-8 film is blown with nitrogen gas for 4-6 minutes on a hot plate at 110-120 degrees Celsius to remove impurities.

[0017] A patterned ZIF-8 thin film is prepared by the aforementioned patterned ZIF-8 thin film preparation method.

[0018] The beneficial effects of this invention are as follows: This invention eliminates the need for conventional photoresist processes, resulting in a simple preparation process and high raw material utilization. Due to the low surface tension of the zinc-based resin precursor solution, the surface is smooth after spin coating, with virtually no by-reaction products or industrial waste. Furthermore, under the catalytic action of benzoyl and photoinitiator 369, only long-wave ultraviolet light is required to polymerize acrylic acid and zinc acrylate monomers, thus eliminating the need for extreme ultraviolet or deep ultraviolet conditions required by existing technologies, simplifying the reaction conditions. In addition, the generated ZnO film is already patterned, eliminating the need for further patterning of the ZIF-8 film. A single CVD step can convert the patterned porous ZnO film into a patterned ZIF-8 film, enabling the creation of various pattern designs. Moreover, the method described in this invention controls the thickness of the zinc-based organic film after photopolymerization by controlling the spin coating speed, thereby controlling the thickness of the patterned ZnO film after heat treatment, and ultimately controlling the thickness of the patterned ZIF-8 film, resulting in a uniform and controllable thickness of the prepared patterned ZIF-8 film. The zinc-based organic film after photopolymerization is smooth and flat, which makes the patterned ZnO film after heat treatment have a better surface morphology, and ultimately the patterned ZIF-8 film generated by CVD has a better surface morphology. Attached Figure Description

[0019] Figure 1 A flowchart illustrating the process for preparing patterned ZIF-8 thin films according to the present invention;

[0020] Figure 2 This is the XRD pattern of the patterned zinc oxide thin film in Embodiment 1 of the present invention;

[0021] Figure 3 This is a microscopic example of the patterned ZIF-8 thin film in Embodiment 1 of the present invention;

[0022] Figure 4 The image shown is the XRD pattern of the patterned ZIF-8 thin film in Embodiment 1 of the present invention.

[0023] Figure 5 This is a top-view SEM image of the patterned ZIF-8 thin film in Embodiment 1 of the present invention;

[0024] Figure 6This is a cross-sectional SEM image of the patterned ZIF-8 thin film in Embodiment 1 of the present invention. Detailed Implementation

[0025] The present invention will be further described below with reference to the accompanying drawings. The following embodiments are only used to illustrate the technical solution of the present invention more clearly, and should not be used to limit the scope of protection of the present invention. Specific Implementation Example 1

[0027] like Figure 1 As shown, this invention discloses a method for preparing patterned ZIF-8 thin films, comprising the following steps:

[0028] Step 1: Prepare the zinc-based resin precursor solution. First, take a 50 mL centrifuge tube and place 480 mg of zinc acrylate powder and 400 mg of 2-methylimidazole powder into the centrifuge tube. The mass ratio of zinc acrylate powder to 2-methylimidazole powder is 1.2:1. Then add 5.2 mL of acrylic acid (mass 5.4652 g). At room temperature, first stir magnetically at 1500 rpm for more than 5 minutes to mix the solute evenly. Then sonicate at 240 W for more than 30 minutes until the solute is completely dissolved to obtain a transparent mixed solution.

[0029] The photoinitiator consisted of equal masses of 80 mg benzoyl and 80 mg 2-phenylbenzyl-2-dimethylamine-1-(4-morpholinobenzylphenyl)butanone (photoinitiator 369), which were added sequentially to the mixed solution. At this point, the photoinitiator accounted for 2% to 3% of the total mass fraction of the zinc-based resin precursor solution. The solution was magnetically stirred at 1500 rpm for at least 30 minutes at room temperature, followed by ultrasonic agitation at 240 W for at least 10 minutes to form a uniformly dispersed zinc-based resin precursor solution. During ultrasonic agitation, the ultrasonic water needed to be changed periodically to prevent the water temperature from rising due to ultrasound, ensuring that the prepared precursor solution remained below 40 degrees Celsius.

[0030] Step two involves pre-treating the silicon wafer. The wafer is placed on a fixed support and first ultrasonically cleaned with soapy water for 10 minutes, then ultrasonically cleaned with deionized water for 10 minutes, and finally ultrasonically cleaned with anhydrous ethanol for 10 minutes. After drying, the wafer is cleaned with the spin-coated side facing upwards using a plasma cleaner for 2 minutes. After cleaning, it is purged with nitrogen for 30 seconds. A spin coater is then used to evenly spread the zinc-based resin precursor solution onto the silicon wafer surface to form a film. The spin coater speed is set to 3500 rpm, the acceleration to 1000 rpm, and the spin coating time to 15 seconds.

[0031] Then, long-wave ultraviolet light (UVB) is used to irradiate the film on the silicon wafer surface through a patterned photomask. The UVB wavelength is 340 nm, and the irradiation time is 40 seconds. The photomask is composed of transparent and opaque regions that define the desired pattern. The photomask consists of alternating transparent and opaque regions, each 140 micrometers wide. The UVB light cures the uniformly dispersed solution under the transparent regions of the photomask, generating a patterned zinc acrylate-acrylic acid copolymer organic film. The working principle is as follows: under the catalysis of benzoyl and photoinitiator 369, the carbon-carbon double bonds of the zinc acrylate monomers and acrylic acid monomers in the zinc-based resin of the transparent portion of the photomask break, and the two undergo a polymerization reaction to generate a zinc acrylate-acrylic acid copolymer, which is then cured to obtain the patterned zinc-based organic film.

[0032] Finally, the patterned zinc acrylate-acrylic copolymer organic film is washed. The washing process includes developing the patterned zinc acrylate-acrylic copolymer organic film in acrylic acid for 5 minutes, and then in propylene glycol methyl ether acetate for 5 minutes.

[0033] Step 3: The patterned zinc acrylate-acrylic acid copolymer organic film is converted into a patterned porous zinc oxide film using a high-temperature heat treatment method. The X-ray diffraction test results of the film are as follows: Figure 2 As shown, only diffraction peaks of zinc oxide were observed, proving the formation of a highly crystalline zinc oxide film. The high-temperature heat treatment method used a muffle furnace at a firing temperature of 450 degrees Celsius for 30 minutes.

[0034] Step four involves reacting the patterned porous zinc oxide film and 2-methylimidazole powder using chemical vapor deposition (CVD) to transform them into a patterned ZIF-8 film. The CVD reaction temperature was set at 100°C, and the reaction time was 3 hours. After the CVD reaction was complete, the patterned ZIF-8 film was removed at 100°C and then purified by blowing it with nitrogen gas for 5 minutes on a 110°C hot plate. A microscopic image of the patterned ZIF-8 film is shown below. Figure 3 As shown in the figure, the white grating area represents ZIF-8, with a width of 140 micrometers. The X-ray diffraction test results of the patterned ZIF-8 thin film are as follows... Figure 4 As shown, only diffraction peaks of ZIF-8 were observed, proving the formation of a highly crystalline ZIF-8 thin film. A top-view scanning electron microscope image of the ZIF-8 thin film is shown below. Figure 5 As shown, the ZIF-8 film surface is dense, and the ZIF-8 particle size is 150-200 nanometers. A cross-sectional scanning electron microscope image of the ZIF-8 film is shown below. Figure 6 As shown, the ZIF-8 film has a uniform thickness of approximately 240 nanometers. Specific Implementation Example 2

[0036] like Figure 1 As shown, this invention discloses a method for preparing patterned ZIF-8 thin films, comprising the following steps:

[0037] Step 1: Prepare the zinc-based resin precursor solution. First, take a 50 mL centrifuge tube and place 440 mg of zinc acrylate powder and 400 mg of 2-methylimidazole powder into the centrifuge tube. The mass ratio of zinc acrylate powder to 2-methylimidazole powder is 1.1:1. Then add 5.2 mL of acrylic acid (mass 5.4652 g). At room temperature, first stir magnetically at 1500 rpm for more than 5 minutes to mix the solute evenly. Then sonicate at 240 W for more than 30 minutes until the solute is completely dissolved to obtain a transparent mixed solution.

[0038] The photoinitiator consisted of equal masses of 80 mg benzoyl and 80 mg 2-phenylbenzyl-2-dimethylamine-1-(4-morpholinobenzylphenyl)butanone (photoinitiator 369), which were added sequentially to the mixed solution. At this point, the photoinitiator accounted for 2% to 3% of the total mass fraction of the zinc-based resin precursor. The solution was magnetically stirred at 1500 rpm for at least 30 minutes at room temperature, followed by ultrasonic oscillation at 240 W for at least 10 minutes to form a uniformly dispersed zinc-based resin precursor solution. During ultrasonic oscillation, the ultrasonic water needed to be changed periodically to prevent the water temperature from rising due to ultrasound, ensuring that the prepared precursor solution was kept below 40 degrees Celsius.

[0039] Step two involves pre-treating the silicon wafer. The wafer is placed on a fixed support and first ultrasonically cleaned with soapy water for 10 minutes, then ultrasonically cleaned with deionized water for 10 minutes, and finally ultrasonically cleaned with anhydrous ethanol for 10 minutes. After drying, the wafer is cleaned with the spin-coated side facing upwards using a plasma cleaner for 2 minutes. After cleaning, it is then purged with nitrogen for 30 seconds. A spin coater is then used to evenly spread the zinc-based resin precursor solution onto the silicon wafer surface to form a film. The spin coater speed is set to 5000 rpm, the acceleration to 1000 rpm, and the spin coating time to 10 seconds.

[0040] Then, long-wave ultraviolet light (UVB) is used to irradiate the film on the silicon wafer surface through a patterned photomask. The UVB wavelength is 380 nm, and the irradiation time is 30 seconds. The photomask is composed of transparent and opaque regions that define the desired pattern. The photomask consists of alternating transparent and opaque regions, each 140 micrometers wide. The UVB light cures the uniformly dispersed solution under the transparent regions of the photomask, generating a patterned zinc acrylate-acrylic acid copolymer organic film. The working principle is as follows: under the catalysis of benzoyl and photoinitiator 369, the carbon-carbon double bonds of the zinc acrylate monomers and acrylic acid monomers in the zinc-based resin of the transparent portion of the photomask break, and the two undergo a polymerization reaction to generate a zinc acrylate-acrylic acid copolymer, which is then cured to obtain the patterned zinc-based organic film.

[0041] Finally, the patterned zinc acrylate-acrylic copolymer organic film is washed. The washing process includes developing the patterned zinc acrylate-acrylic copolymer organic film in acrylic acid for 6 minutes, and then in propylene glycol methyl ether acetate for 6 minutes.

[0042] Step 3 involves converting the patterned zinc acrylate-acrylic acid copolymer organic film into a patterned porous zinc oxide film using a high-temperature heat treatment method. The high-temperature heat treatment is performed in a muffle furnace at a temperature of 650 degrees Celsius for 20 minutes.

[0043] Step four involves reacting the patterned porous zinc oxide film and 2-methylimidazole powder using chemical vapor deposition (CVD) to convert them into a patterned ZIF-8 film. The reaction temperature range for CVD is 110 degrees Celsius, and the reaction time range is 2 hours. After the CVD reaction is complete, the patterned ZIF-8 film is removed at 110 degrees Celsius and then purified by blowing it with nitrogen gas for 6 minutes on a 110-degree Celsius hot plate. Specific Implementation Example 3

[0045] like Figure 1 As shown, this invention discloses a method for preparing patterned ZIF-8 thin films, comprising the following steps:

[0046] Step 1: Prepare the zinc-based resin precursor solution. First, take a 50 mL centrifuge tube and place 520 mg of zinc acrylate powder and 400 mg of 2-methylimidazole powder into the centrifuge tube. The mass ratio of zinc acrylate powder to 2-methylimidazole powder is 1.3:1. Then add 5.2 mL of acrylic acid (mass 5.4652 g). At room temperature, first stir magnetically at 1500 rpm for more than 5 minutes to mix the solute evenly. Then sonicate at 240 W for more than 30 minutes until the solute is completely dissolved to obtain a transparent mixed solution.

[0047] The photoinitiator consisted of equal masses of 80 mg benzoyl and 80 mg 2-phenylbenzyl-2-dimethylamine-1-(4-morpholinobenzylphenyl)butanone (photoinitiator 369), which were added sequentially to the mixed solution. At this point, the photoinitiator accounted for 2% to 3% of the total mass fraction of the zinc-based resin precursor. The solution was magnetically stirred at 1500 rpm for at least 30 minutes at room temperature, followed by ultrasonic oscillation at 240 W for at least 10 minutes to form a uniformly dispersed zinc-based resin precursor solution. During ultrasonic oscillation, the ultrasonic water needed to be changed periodically to prevent the water temperature from rising due to ultrasound, ensuring that the prepared precursor solution was kept below 40 degrees Celsius.

[0048] Step two involves pre-treating the silicon wafer. The wafer is placed on a fixed support and first ultrasonically cleaned with soapy water for 10 minutes, then ultrasonically cleaned with deionized water for 10 minutes, and finally ultrasonically cleaned with anhydrous ethanol for 10 minutes. After drying, the wafer is cleaned with the spin-coated side facing upwards using a plasma cleaner for 2 minutes. After cleaning, it is purged with nitrogen for 30 seconds. A spin coater is then used to evenly spread the zinc-based resin precursor solution onto the silicon wafer surface to form a film. The spin coater speed is set to 4500 rpm, the acceleration to 1000 rpm, and the spin coating time to 12 seconds.

[0049] Then, long-wave ultraviolet light (UVB) is used to irradiate the film on the silicon wafer surface through a patterned photomask. The UVB wavelength is 360 nm, and the irradiation time is 35 seconds. The photomask is composed of transparent and opaque regions that define the desired pattern. The photomask consists of alternating transparent and opaque regions, each 140 micrometers wide. The UVB light cures the uniformly dispersed solution under the transparent regions of the photomask, generating a patterned zinc acrylate-acrylic acid copolymer organic film. The working principle is as follows: under the catalysis of benzoyl and photoinitiator 369, the carbon-carbon double bonds of the zinc acrylate monomers and acrylic acid monomers in the zinc-based resin of the transparent portion of the photomask break, and the two undergo a polymerization reaction to generate a zinc acrylate-acrylic acid copolymer, which is then cured to obtain the patterned zinc-based organic film.

[0050] Finally, the patterned zinc acrylate-acrylic copolymer organic film is washed. The washing process includes developing the patterned zinc acrylate-acrylic copolymer organic film in acrylic acid for 4 minutes, and then in propylene glycol methyl ether acetate for 4 minutes.

[0051] Step 3 involves converting the patterned zinc acrylate-acrylic acid copolymer organic film into a patterned porous zinc oxide film using a high-temperature heat treatment method. The high-temperature heat treatment is performed in a muffle furnace at a temperature of 550 degrees Celsius for 25 minutes.

[0052] Step four involves reacting the patterned porous zinc oxide film and 2-methylimidazole powder using chemical vapor deposition (CVD) to convert them into a patterned ZIF-8 film. The CVD reaction temperature is 105°C, and the reaction time is 2.5 hours. After the CVD reaction is complete, the patterned ZIF-8 film is removed at 105°C and then purified by blowing it with nitrogen gas for 4 minutes on a 115°C hot plate.

[0053] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for preparing patterned ZIF-8 thin films, characterized in that: Includes the following steps: The preparation of the zinc-based resin precursor solution includes: adding zinc acrylate powder and 2-methylimidazole powder to an acrylic acid solution, then subjecting the mixture to ultrasonic vibration to obtain a mixed solution of the three; then adding a photoinitiator to the prepared mixed solution and subjecting the mixture to magnetic stirring and ultrasonic vibration to form a uniformly dispersed zinc-based resin precursor solution, ensuring that the preparation of the precursor solution is below 40 degrees Celsius. The zinc-based resin precursor solution is uniformly diffused onto the silicon wafer surface using a spin coater to form a film. Then, long-wave ultraviolet light is used to irradiate the film on the silicon wafer surface through a patterned mask to cure the film on the silicon wafer surface and generate a patterned zinc acrylate-acrylic acid copolymer organic film. The patterned zinc acrylate-acrylic acid copolymer organic film is then washed. A patterned zinc acrylate-acrylic acid copolymer organic film is converted into a patterned porous zinc oxide film by a high-temperature heat treatment method, wherein the firing temperature range of the high-temperature heat treatment method is 450~650 degrees Celsius. A patterned porous zinc oxide film was reacted with 2-methylimidazole powder using chemical vapor deposition to transform the patterned porous zinc oxide film into a patterned ZIF-8 film.

2. The method for preparing a patterned ZIF-8 thin film according to claim 1, characterized in that: The mass ratio of zinc acrylate powder to 2-methylimidazole powder ranges from 1.1 to 1.3:1; the photoinitiator accounts for 2 to 3% of the total mass fraction of the zinc-based resin precursor solution, and the photoinitiator is a mixture of benzoyl and 2-phenylbenzyl-2-dimethylamine-1-(4-morpholinobenzylphenyl)butanone of equal mass.

3. The method for preparing a patterned ZIF-8 thin film according to claim 1, characterized in that: Before uniformly diffusing the zinc-based resin precursor solution onto the silicon wafer surface, the silicon wafer is pretreated, including: placing the silicon wafer on a fixed support, first cleaning it with ultrasonic vibration using soapy water, then cleaning it with ultrasonic vibration using deionized water, and finally cleaning it with ultrasonic vibration using anhydrous ethanol. After the silicon wafer is dried, it is cleaned with the spin-coated side facing up using a plasma cleaner. After cleaning, it is blown with nitrogen gas.

4. The method for preparing patterned ZIF-8 thin films according to claim 1, characterized in that: The spin coater's rotation speed is set between 3000 and 5000 rpm, its acceleration is 1000 rpm, and its spin coating time is set between 10 and 15 seconds.

5. The method for preparing a patterned ZIF-8 thin film according to claim 1, characterized in that: The wavelength range of long-wave ultraviolet radiation is 340~380 nanometers, and the irradiation time of long-wave ultraviolet radiation is 30~40 seconds.

6. The method for preparing a patterned ZIF-8 thin film according to claim 1, characterized in that: The washing process includes: first developing the patterned zinc acrylate-acrylic acid copolymer organic film in acrylic acid for 4-6 minutes, and then developing it in propylene glycol methyl ether acetate for 4-6 minutes.

7. The method for preparing a patterned ZIF-8 thin film according to claim 1, characterized in that: The high-temperature heat treatment method uses a muffle furnace for firing, with a firing time range of 20 to 30 minutes.

8. The method for preparing a patterned ZIF-8 thin film according to claim 1, characterized in that: The reaction temperature range of chemical vapor deposition is 100~110 degrees Celsius, and the reaction time range is 2~3 hours. After the chemical vapor deposition reaction is completed, the patterned ZIF-8 film is taken out at 100~110 degrees Celsius. Then, the patterned ZIF-8 film is blown with nitrogen gas for 4~6 minutes on a hot plate at 110~120 degrees Celsius to remove impurities.

9. A patterned ZIF-8 thin film, characterized in that: It is prepared by the patterned ZIF-8 thin film preparation method according to any one of claims 1 to 8.

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