Pick-and-place die tip and method of manufacture, hybrid bonding method

Through the unique design and limiting structure of the cyclone suction head, the problems of cleanliness and space requirements in the process of picking up microchips are solved, and contactless adsorption and reliable mixing and bonding are achieved.

CN117174633BActive Publication Date: 2026-05-08INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
Filing Date
2022-05-27
Publication Date
2026-05-08

AI Technical Summary

Technical Problem

In the existing technology, the pick-up process of microchips cannot guarantee cleanliness, and non-contact methods cannot be applied to microchips, resulting in pores or failures at the bonding interface.

Method used

A cyclone-type pick-up head was designed, comprising a separate base and a cover. Through the combination of an air inlet channel, an air distribution cavity, and a cyclone channel, non-contact pickup and hybrid bonding of microchips are achieved. Limiting blocks and limiting grooves are used to ensure welding reliability and sealing.

Benefits of technology

This technology enables contactless adsorption of microchips, improves adsorption force and flow stability of high-speed airflow, reduces processing difficulty, ensures welding reliability and sealing, and improves bonding efficiency.

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Abstract

The application discloses a pick-up patch suction head and a preparation method and a mixed bonding method, and belongs to the technical field of semiconductor packaging. The problems that the cleanliness cannot be guaranteed, the required space is large, and the non-contact pick-up cannot be used for micro-chips in the prior art are solved. The suction head comprises a suction disc, a base body and a cover body which are arranged in a split mode, a gas inlet channel, a gas distribution cavity, a cyclone channel and a cyclone cavity are arranged on the base body, and the angle between the gas outlet direction of the cyclone channel and the radial direction of the cyclone cavity is greater than 0° and less than or equal to 90°. The preparation method comprises processing the base body and the cover body and sealingly connecting the base body and the cover body. The mixed bonding method comprises the following steps: the front surface of the micro-chip is picked up by using the pick-up patch suction head; the back surface of the micro-chip is placed on a contact suction head; and the front surface of the micro-chip is contacted with a wafer to press and patch. The pick-up patch suction head, the preparation method and the mixed bonding method can be used for patching of micro-chips.
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Description

Technical Field

[0001] This invention belongs to the field of semiconductor packaging technology, and particularly relates to a pick-up and placement tip and its preparation method, as well as a hybrid bonding method. Background Technology

[0002] Chip-to-wafer (D2W) hybrid bonding technology is a bumpless bonding method that is highly sensitive to the cleanliness of the bonding surface. Contamination on the chip surface during the placement process can lead to a large number of pores at the bonding interface or complete bonding failure.

[0003] For chip pickup, direct contact methods can be used (e.g., front-facing direct contact and all four sides direct contact). However, front-facing direct contact makes it difficult to guarantee the cleanliness requirements of the chip pick-up tip surface, requiring subsequent cleaning treatment, which is less efficient and more costly. All four sides direct contact requires a large space between chips, which significantly reduces the number of chips that can be picked up from the wafer. Currently, non-contact methods are mainly used for picking up and placing larger products (e.g., ultra-thin wafers and glass jet trays), and cannot be applied to picking up and placing microchips. Summary of the Invention

[0004] Based on the above analysis, the present invention aims to provide a pick-up and patch pick-up tip and its preparation method, as well as a hybrid bonding method, which solves the problems in the prior art where direct contact pick-up of microchips cannot guarantee cleanliness, requires a large space, and non-contact pick-up cannot be used for microchips.

[0005] The objective of this invention is mainly achieved through the following technical solutions:

[0006] This invention provides a pick-up and patch suction head, including a cyclone suction head and a suction cup for vacuum adsorption of the cyclone suction head; the cyclone suction head includes a separate base and a cover, the base having an air inlet channel, an air distribution cavity, a cyclone channel, and a cyclone cavity connected in sequence, the top of the air distribution cavity being an open end, the cover covering the open end and sealingly connected to the open end; the air outlet direction of the cyclone channel and the radial angle of the cyclone cavity are greater than 0° and less than or equal to 90°.

[0007] Furthermore, the air intake channel is arranged radially along the base, the air distribution cavity is located at the top of the base, and the cyclone channel is located at the bottom of the base. The axis of the air distribution cavity and the axis of the cyclone channel are both parallel to the axis of the base.

[0008] Furthermore, the cyclone channel includes a first section and a second section connected to the first section. The axis of the first section is parallel to the axis of the base, and the angle between the outlet direction of the second section and the radial direction of the cyclone cavity is greater than 0° and less than or equal to 90°.

[0009] Furthermore, the angle between the outlet direction of the cyclone channel and the radial direction of the cyclone cavity is 90°.

[0010] Furthermore, the number of cyclone channels is 3 to 6.

[0011] Furthermore, there are four cyclone channels; the air outlet directions of two adjacent cyclone channels are perpendicular.

[0012] Furthermore, the materials for the substrate and the cover are stainless steel, aluminum alloy, or copper alloy.

[0013] Furthermore, the pick-up and placement tip is suitable for microchips with a size of 1-100mm × 1-100mm.

[0014] The present invention also provides a method for preparing a pick-up and patch suction tip, which is used to prepare the above-mentioned pick-up and patch suction tip. The preparation method includes the following steps:

[0015] Step 1: Process the base and the cover separately;

[0016] Step 2: Seal the substrate and cover together to obtain the pick-up patch nozzle.

[0017] The present invention also provides a hybrid bonding method, which uses the above-mentioned pick-up patch tip and includes the following steps:

[0018] A pick-up nozzle is used to pick up microchips from the front without contact.

[0019] Place the back of the microchip on the contact tip;

[0020] The pick-up and placement head releases the front side of the microchip, and then applies pressure to place the front side of the microchip onto the wafer, completing the hybrid bonding from the microchip to the wafer.

[0021] Compared with the prior art, the present invention can achieve at least one of the following beneficial effects:

[0022] A) The pick-up and patch suction head provided by this invention features a unique cyclone suction head structure designed specifically for microchips. On the one hand, existing cyclone suction heads are relatively large, thus allowing for the fabrication of fluid channels using processes such as drilling. However, for microchips, the cyclone suction head of this invention cannot be fabricated using conventional cyclone suction head processing techniques, making its manufacturability particularly important. The cyclone suction head of this invention divides its overall structure into a base and a cover. An air inlet channel, a gas distribution cavity, a cyclone channel, and a cyclone cavity are fabricated on the base. The gas distribution cavity is sealed by the cover. By using separate components for fabrication and then assembling them, the fabrication difficulty of the cyclone suction head can be greatly reduced. Thus, the cyclone suction head of this invention not only has cyclone adsorption function but also enables true processing and production.

[0023] B) The pick-up and patch suction head provided by the present invention has an air outlet direction of cyclone channel at a 90° angle to the radial direction of cyclone cavity. In this way, the high-speed fluid flowing out of the air outlet of cyclone channel can flow at high speed along the inner wall of cyclone cavity, forming a vacuum area in cyclone cavity as large as possible, thereby further improving the adsorption force of cyclone suction head and the flow stability of high-speed airflow.

[0024] C) The pick-up and patch suction head provided by this invention, through a limiting block and a limiting groove, wherein the limiting segment can effectively limit the axial displacement between the cover and the substrate, and the hook-up segment can limit the radial displacement between the cover and the substrate. The cooperation between the limiting segment and the hook-up segment essentially ensures that the cover and the substrate will not experience relative displacement after sealing welding, thereby reducing the stress at the weld and ensuring the reliability and sealing of the weld. Furthermore, it should be noted that before welding, the cover and the substrate approach each other radially, allowing the limiting block located at the edge to insert into the limiting groove, which also positions the cover and the substrate, ensuring the assembly accuracy of the weld.

[0025] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the written description and the accompanying drawings. Attached Figure Description

[0026] The accompanying drawings are for illustrative purposes only and are not intended to limit the invention. Throughout the drawings, the same reference numerals denote the same parts.

[0027] Figure 1 This is a schematic diagram of the structure of the pick-up patch suction head provided by the present invention. In the figure, the solid arrows indicate the flow direction of high-speed gas, and the dashed arrows indicate the direction of the adsorption force.

[0028] Figure 2 This is a top view of the substrate in the pick-up patch head provided by the present invention;

[0029] Figure 3 for Figure 2 AB section view;

[0030] Figure 4 for Figure 2 BC section view;

[0031] Figure 5 This is a schematic diagram of the limiting block and limiting groove in the pick-up and patch suction head provided by the present invention;

[0032] Figure 6 This is a schematic flowchart of the hybrid bonding method provided by the present invention.

[0033] Figure label:

[0034] 1-Inlet channel; 2-Gas distribution cavity; 3-Cyclone channel; 31-First section; 32-Second section; 4-Cyclone cavity; 5-Suction cup; 6-Microchip; 7-Contact suction head; 8-Wafer; 9-Connecting section; 10-Limiting section; 11-Hook-up section; 12-Cover; 13-Substrate. Detailed Implementation

[0035] Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form part of the present invention and, together with the embodiments of the present invention, serve to illustrate the principles of the present invention.

[0036] This invention provides a pick-up tip for patches, see [link to relevant documentation]. Figures 1 to 5 The device includes a cyclone suction head and a suction cup 5 (e.g., a vacuum suction cup) for vacuum adsorption of the cyclone suction head. The cyclone suction head includes a separate base 13 and a cover 12. An air inlet channel 1, a gas distribution cavity 2, a cyclone channel 3, and a cyclone cavity 4 are sequentially connected on the base 13. The top end of the gas distribution cavity 2 is an open end. The cover 12 covers the open end and is sealed to the open end. The angle between the air outlet direction of the cyclone channel 3 and the radial direction of the cyclone cavity 4 is greater than 0° and less than or equal to 90°.

[0037] In practice, the air inlet of the air inlet channel 1 is connected to the air supply unit, and the microchip 6 is located at the air outlet of the cyclone cavity 4. The high-pressure airflow provided by the air supply unit passes sequentially through the air inlet channel 1, the air distribution cavity 2, the cyclone channel 3, and the cyclone cavity 4, flowing out from the gap between the cyclone cavity 4 and the microchip 6, and rapidly diffusing outward along the radial direction of the cyclone cavity 4. This increases the gas velocity above the microchip 6, creating a vacuum area between the front of the microchip 6 and the cyclone cavity 4, causing the microchip 6 to move closer to the cyclone suction head, achieving contactless adsorption and pickup of the microchip 6. It is important to emphasize that because of the high-speed airflow between the microchip 6 and the cyclone suction head, the microchip 6 will not come into contact with the cyclone suction head, thus avoiding contamination of the chip surface by the suction head during chip pickup.

[0038] It should be noted that, in order to achieve the adsorption of the microchip 6, the diameter of the aforementioned cyclone suction head is 10–75 mm, for example, 10 mm, 25 mm, 30 mm, 40 mm, 55 mm, or 75 mm; the overall height of the cyclone suction head is 5–10 mm, for example, 5 mm, 6.5 mm, 8 mm, or 10 mm; the diameter of the air inlet channel 1 is 0.8–1.3 mm, for example, 0.8 mm, 0.9 mm, 1.2 mm, or 1.3 mm; and the diameter of the air distribution cavity 2 is 8.5–9.5 mm, for example, 8.5 mm, 8.8 mm, or 9 mm. The diameter of the cyclone cavity 4 is 5-7 mm, for example, 5.0 mm, 5.8 mm, 6.0 mm, 6.5 mm or 7.0 mm, and the depth is 2.0-3.5 mm, for example, 2.0 mm, 2.6 mm, 3.1 mm or 3.5 mm; the diameter of the outlet of the cyclone channel 3 is 0.8-1.3 mm, for example, 0.8 mm, 0.9 mm, 1.2 mm or 1.3 mm.

[0039] For example, the above-described pick-up and placement tip is particularly suitable for contactless pick-up and placement of microchip 6, the size (length × width) of which is 1 to 100 mm × 1 to 100 mm.

[0040] Compared with the prior art, the pick-up and patch suction head provided by the present invention features a unique cyclone suction head structure design for the microchip 6. On the one hand, the cyclone suction heads in the prior art are relatively large in size, so they can be processed by drilling and other processes to realize the fluid channel. However, for the microchip 6, the cyclone suction head of the present invention cannot be processed by conventional cyclone suction head processing technology, and its machinability is particularly important. The cyclone suction head of the present invention divides the overall structure into a base 13 and a cover 12. An air inlet channel 1, a gas distribution cavity 2, a cyclone channel 3, and a cyclone cavity 4 are processed on the base 13. The gas distribution cavity 2 is sealed by the cover 12. By using separate component processing and then assembling, the processing difficulty of the cyclone suction head can be greatly reduced, so that the cyclone suction head of the present invention not only has cyclone adsorption function, but also realizes true processing and production.

[0041] In order to achieve rapid flow of high-speed airflow, the specific arrangement of the above-mentioned air intake channel 1, air distribution cavity 2, cyclone channel 3 and cyclone cavity 4 is as follows: the air intake channel is arranged radially along the base 13, the air distribution cavity 2 is located at the top of the base 13, the cyclone channel 3 is located at the bottom of the base 13, and the axis of the air distribution cavity 2 and the axis of the cyclone channel 3 are both parallel to the axis of the base 13.

[0042] Specifically, the structure of the cyclone channel 3 includes a first section 31 and a second section 32 connected to the first section 31. The axis of the first section 31 is parallel to the axis of the base 13. The air outlet direction of the second section 32 (i.e., the axis of the second section 32) is at an angle greater than 0° and less than or equal to 90° with the radial direction of the cyclone cavity 4.

[0043] Considering the adsorption force of the cyclone suction head and the flow stability of the high-speed airflow, the outlet direction of the cyclone channel 3 is at a 90° angle to the radial direction of the cyclone cavity 4. In other words, the outlet direction of the cyclone channel 3 is perpendicular to the radial direction of the cyclone cavity 4. In this way, the high-speed fluid flowing out of the outlet of the cyclone channel 3 can flow at high speed along the inner wall of the cyclone cavity 4, forming a vacuum area in the cyclone cavity 4 as large as possible, thereby further improving the adsorption force of the cyclone suction head and the flow stability of the high-speed airflow.

[0044] For example, the number of the above-mentioned cyclone channels 3 can be 3 to 6, such as 4. The 4 cyclone channels 3 are evenly and spirally divergently arranged, and the outlet directions of two adjacent cyclone channels are perpendicular. When the high-speed airflow flows out from the outlet of the cyclone channel 3, the high-speed fluid can flow into the cyclone cavity 4 along the tangential direction of the inner wall of the cyclone cavity 4. This can effectively reduce the flow resistance of the high-speed fluid, ensure its flow speed, and further increase the diameter of the vacuum region.

[0045] It is worth noting that during the process of picking up the microchip with the pick-up nozzle, the connection interface between the cover 12 and the substrate 13 is always subjected to tension generated by the high-speed gas. If the two are sealed by resistance welding or solder welding alone, separation or air leakage may occur. Therefore, the connection between the cover 12 and the substrate 13 is provided with a mutually cooperating limiting block and limiting groove. The limiting block is fixedly connected to one of the cover 12 and the substrate 13, and the limiting groove is opened on the other of the cover 12 and the substrate 13 through the mutually cooperating limiting block and limiting groove.

[0046] Specifically, the structure of the limiting block includes a connecting segment 9, a limiting segment 10, and a hook-up segment 11 connected in sequence. These segments are all located at the edges of the cover 12 and the base 13. The shape of the limiting groove matches the shape of the limiting block. The limiting groove includes a connecting groove, a limiting groove, and a hook-up groove connected in sequence. The connecting segment 9 is inserted into the connecting groove, the limiting segment 10 into the limiting groove, and the hook-up segment 11 into the hook-up groove. With this structure of limiting block and limiting groove, the limiting segment 10 effectively limits the axial displacement between the cover 12 and the base 13, and the hook-up segment 11 limits the radial displacement between them. The cooperation between the limiting segment 10 and the hook-up segment 11 essentially ensures that the cover 12 and the base 13 will not experience relative displacement after sealing welding, thereby reducing the stress at the weld and ensuring the reliability and sealing of the weld. In addition, it should be noted that before welding, the cover 12 and the base 13 approach each other radially, so that the limiting block located at the edge is inserted into the limiting groove, which can also position the cover 12 and the base 13 to ensure the assembly accuracy of welding.

[0047] It should be noted that, in order to connect the limiting block and the limiting groove in advance before sealing welding, the number of the above-mentioned limiting block and limiting groove is one.

[0048] Specifically, the materials for the base 13 and the cover 12 can be stainless steel, aluminum alloy, or copper alloy.

[0049] The present invention also provides a method for preparing a pick-up patch tip, the method comprising the following steps:

[0050] Step 1: The base 13 and the cover 12 are processed by metal injection molding, metal 3D printing or micro-machining respectively;

[0051] Step 2: Use resistance welding or solder welding to seal the substrate 13 and the cover 12 to obtain the pick-up nozzle.

[0052] Compared with the prior art, the beneficial effects of the method for preparing the pick-up patch tip provided by the present invention are basically the same as those of the pick-up patch tip provided above, and will not be elaborated here.

[0053] For metal injection molding, step 1 above includes the following steps:

[0054] Step 11: Prepare the base mold and the cover mold according to the shape and size of the base 13 and the cover 12;

[0055] Step 12: Inject the raw material of the substrate 13 (stainless steel, aluminum alloy or copper alloy powder with a particle size of 0.1 to 100 μm) into the substrate 13 mold, and use the substrate 13 mold to perform injection molding to obtain the substrate 13 to be treated.

[0056] The raw material of the cover body 12 (stainless steel, aluminum alloy or copper alloy powder with a particle size of 0.1 to 100 μm) is injected into the cover body mold, and the cover body 12 is injection molded using the cover body mold to obtain the cover body to be processed.

[0057] The molding agent used in injection molding is either a wax-based molding agent or a resin-based molding agent.

[0058] Step 13: Degrease the molded substrate and cover by hot degreasing (degreasing temperature is 40-80℃) or by acetone-based solvent;

[0059] Step 14: Sinter the degreased substrate and the cover to be treated to obtain substrate 13 and cover 12.

[0060] For 3D printing, step 1 above includes the following steps:

[0061] Step 11': Design the 3D printing program based on the shape and size of the base 13 and the cover 12;

[0062] Step 12': Using raw materials (stainless steel, aluminum alloy, or copper alloy powder with a particle size of 0.1–100 μm), print the substrate and the cover to be processed according to the 3D printing program;

[0063] Step 13': The substrate and the cover are sintered to form the substrate 13 and the cover 12.

[0064] It should also be noted that the sintering temperature varies depending on the raw material. Specifically, the sintering processes are as follows: for stainless steel, the sintering temperature is 1000-1400℃; for aluminum alloy, the sintering temperature is 300-500℃; and for copper alloy, the sintering temperature is 500-800℃.

[0065] For micro-machining, step 1 above includes the following steps:

[0066] The base 13 and the cover 12 are machined using a CNC machining center and a micro tool, respectively.

[0067] In order to ensure the connection stability between the base 13 and the cover 12, resistance welding is used to seal the base 13 and the cover 12. The specific process parameters are as follows: resistance welding pressure is 10~500gf, and resistance welding power is 50~200W.

[0068] The substrate 13 and the cover 12 are sealed together by soldering. The specific process parameters are as follows: the surfaces of the substrate 13 and the cover 12 are nickel plated with a thickness of 0.5 to 10 μm, the solder is tin-based solder, and the soldering temperature is 150 to 350℃.

[0069] This invention also provides a hybrid bonding method, see [link to relevant documentation]. Figure 6 Using the aforementioned pick-up nozzle, this hybrid bonding method includes the following steps:

[0070] Step a: Use a pick-up pick-up nozzle to non-contactly pick up the front of the microchip 6, so that the microchip 6 is separated from the blue film, and the air pressure at the air inlet is 0.15-1MPa;

[0071] Step b: Place the back of the microchip 6 onto the contact tip 7;

[0072] Step c: Pick up the placement head to release the front side of the microchip 6, and place the front side of the microchip 6 into contact with the wafer 8 for pressure placement. The pressure is 1 to 1000N. The wafer 8 is 8 inches or 12 inches in size. This completes the placement of the microchip 6 to the wafer 8, realizing the hybrid bonding of the microchip 6 to the wafer 8.

[0073] Compared with the prior art, the beneficial effects of the hybrid bonding method provided by the present invention are basically the same as those of the pick-up patch tip provided above, and will not be elaborated here.

[0074] Example 1

[0075] The specific dimensions of the pick-up patch head in this embodiment are as follows:

[0076] The overall diameter of the pick-up patch nozzle is 10mm, the overall height is 8mm, the diameter of the air inlet channel is 1mm, the diameter of the air distribution cavity is 9mm, the depth of the air distribution cavity is 2mm, the diameter of the cyclone cavity is 6mm, the depth of the cyclone cavity is 3mm, the number of cyclone channels is 4, and the diameter of the cyclone channels is 1mm.

[0077] Example 2

[0078] The preparation method of this embodiment is used to prepare the pick-up patch tip of Example 1. The preparation method includes the following steps:

[0079] Prepare the base mold and the cover mold according to the shape and size of the base and the cover;

[0080] Stainless steel with a particle size of 50μm was injected into the base mold and the cap mold, respectively. The molding agent used in the injection molding was a wax-based molding agent, resulting in the base and the cap to be treated.

[0081] The molded substrate and cover were subjected to thermal degreasing (degreasing temperature was 40℃).

[0082] The degreased substrate and the cap were sintered at 1200℃ to obtain the substrate and the cap.

[0083] The substrate and cover are sealed together by resistance welding to obtain a pick-up nozzle. The resistance welding pressure is 500gf and the resistance welding power is 100W.

[0084] Example 3

[0085] The microchip is mounted using the pick-up and placement head of Example 1. The microchip has dimensions (length × width) of 10 × 10 mm. The mounting method includes the following steps:

[0086] A non-contact pick-up tip is used to pick up the front of the microchip, which separates the microchip from the blue film. The air pressure at the air inlet is 1MPa.

[0087] Place the back of the microchip on the contact tip;

[0088] The non-contact pick releases the front side of the microchip, bringing it into contact with the wafer for pressure bonding at a pressure of 500N. The wafer size is 8 inches, completing the microchip-to-wafer bonding and achieving hybrid bonding between the microchip and the wafer.

[0089] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention.

Claims

1. A pick-up nozzle for patches, characterized in that, The device includes a cyclone suction head and a suction cup for vacuum adsorption of the cyclone suction head. The cyclone suction head comprises a separate base and a cover. The base has an air inlet channel, a gas distribution cavity, a cyclone channel, and a cyclone cavity connected in sequence. The top of the gas distribution cavity is an open end. The cover is placed on the open end and is sealed to the open end. The angle between the air outlet direction of the cyclone channel and the radial direction of the cyclone cavity is greater than 0° and less than or equal to 90°. The air intake channel is arranged radially along the base, the air distribution cavity is located at the top of the base, and the cyclone channel is located at the bottom of the base. The axis of the air distribution cavity and the axis of the cyclone channel are both parallel to the axis of the base. The cyclone channel includes a first section and a second section connected to the first section. The axis of the first section is parallel to the axis of the base, and the angle between the air outlet direction of the second section and the radial direction of the cyclone cavity is greater than 0° and less than or equal to 90°. The connection between the cover and the base is provided with a mutually cooperating limiting block and a limiting groove. The limiting block is fixedly connected to one of the cover and the base, and the limiting groove is formed on the other of the cover and the base. The limiting block includes a connecting segment, a limiting segment, and a hook-up segment connected in sequence. The connecting segment, the limiting segment, and the hook-up segment are all located at the edges of the cover and the base. The limiting groove includes a connecting groove, a limiting groove, and a hook-up groove connected in sequence. The connecting segment is inserted into the connecting groove, and the limiting segment is inserted into the limiting groove. The hook-up section is inserted into the hook-up groove, the limiting section limits the axial displacement between the cover and the base, and the hook-up section limits the radial displacement between the cover and the base; the pick-up and patch suction head is suitable for microchips, the size of which is 1~100mm×1~100mm; the airflow passes through the air inlet channel, the air distribution cavity, the cyclone channel and the cyclone cavity in sequence, flows out from the gap between the cyclone cavity and the microchip, and diffuses rapidly outward along the radial direction of the cyclone cavity, so as to realize the non-contact adsorption and pickup of the microchip.

2. The pick-up patch suction head according to claim 1, characterized in that, The air outlet direction of the cyclone channel is at a 90° angle to the radial direction of the cyclone cavity.

3. The pick-up patch suction head according to claim 2, characterized in that, The number of cyclone channels is 3 to 6.

4. The pick-up patch suction head according to claim 3, characterized in that, The number of cyclone channels is 4; The air outlet directions of the inner channels of two adjacent cyclones are perpendicular.

5. The pick-up patch suction head according to claim 1, characterized in that, The materials of the substrate and the cover are stainless steel, aluminum alloy or copper alloy.

6. A method for preparing a pick-up patch tip, characterized in that, The preparation method is used to prepare the pick-up patch tip as described in any one of claims 1 to 5, and the preparation method includes the following steps: Step 1: Process the base and the cover separately; Step 2: Seal the substrate and cover together to obtain the pick-up patch nozzle.

7. A hybrid bonding method, characterized in that, Using the pick-up patch tip as described in any one of claims 1 to 5, the hybrid bonding method includes the following steps: A pick-up nozzle is used to pick up microchips from the front without contact. Place the back of the microchip on the contact tip; The pick-up and placement head releases the front side of the microchip, and then applies pressure to place the front side of the microchip onto the wafer, completing the hybrid bonding from the microchip to the wafer.

Citation Information

Patent Citations

  • Contact-free transport device

    CN101172540A

  • Miniature cyclonic suction head

    CN217788365U

  • Non-contact substrate operating apparatus and epitaxial reactor

    WO2020024984A1