Plasma processing apparatus and substrate processing method

Abstract

In a plasma processing apparatus disclosed herein, a substrate support portion has a pedestal and a dielectric portion. The pedestal includes a base member and an electrode. The base member is formed of a dielectric or an insulator. The electrode is formed on an upper surface of the base member. The electrode constitutes an upper surface of the pedestal. The dielectric portion provides a support surface on which a substrate can be loaded. The dielectric portion extends from the upper surface of the pedestal to the support surface and is formed of a dielectric only. A bias power source and a chuck power source are electrically connected to the electrode of the pedestal.

Description

Technical Field

[0001] The exemplary embodiments of the present invention relate to a plasma processing apparatus and a substrate processing method. Background Technology

[0002] A plasma processing apparatus is used for plasma processing of substrates. The plasma processing apparatus includes a chamber and a substrate support. The substrate support includes a base and an electrostatic chuck. The base forms the lower electrode. The base is connected to a bias power supply. The electrostatic chuck is mounted on the base. The electrostatic chuck includes an insulating layer and electrodes disposed within the insulating layer. The electrodes of the electrostatic chuck are connected to a DC power supply. Such a plasma processing apparatus is disclosed in the following Patent Documents 1 and 2.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-169635

[0006] Patent Document 2: Japanese Patent Application Publication No. 2020-205444 Summary of the Invention

[0007] The technical problem that the invention aims to solve

[0008] This invention provides a technique for efficiently supplying bias energy from a bias power supply to a substrate.

[0009] Technical solutions for solving technical problems

[0010] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a plasma generation section, a bias power supply, and a chuck power supply. The substrate support is disposed within the chamber. The plasma generation section is configured to generate plasma within the chamber. The bias power supply is configured to generate bias energy for attracting ions from the plasma to the substrate. The chuck power supply is configured to generate a voltage applied to the substrate support for holding the substrate using electrostatic attraction. The bias energy is a high-frequency power or a periodically generated voltage pulse. The substrate support has a base and a dielectric section. The base includes a substrate component and electrodes. The substrate component is formed of a dielectric or an insulator. Electrodes are formed on the upper surface of the substrate component. The electrodes constitute the upper surface of the base. The dielectric section provides a support surface on which a substrate can be mounted. The dielectric section extends from the upper surface of the base to the support surface and is formed solely of a dielectric. The bias power supply and the chuck power supply are electrically connected to the electrodes of the base.

[0011] Invention Effects

[0012] According to one exemplary implementation, bias energy from a bias power supply can be efficiently supplied to the substrate. Attached Figure Description

[0013] Figure 1 This is a diagram that schematically illustrates a plasma processing apparatus of an exemplary embodiment.

[0014] Figure 2 This is a diagram that schematically illustrates a plasma processing apparatus of an exemplary embodiment.

[0015] Figure 3 This is a diagram showing a substrate support and multiple power sources of a plasma processing apparatus according to an exemplary embodiment.

[0016] Figure 4 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to another exemplary embodiment.

[0017] Figure 5 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment.

[0018] Figure 6 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment.

[0019] Figure 7 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment.

[0020] Figure 8 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment.

[0021] Figure 9 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment.

[0022] Figure 10 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment.

[0023] Figure 11 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment.

[0024] Figure 12 This is a flowchart illustrating a substrate processing method of an exemplary implementation. Detailed Implementation

[0025] The following describes various illustrative implementation methods.

[0026] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a plasma generation section, a bias power supply, and a chuck power supply. The substrate support is disposed within the chamber. The plasma generation section is configured to generate plasma within the chamber. The bias power supply is configured to generate bias energy for attracting ions from the plasma to the substrate. The chuck power supply is configured to generate a voltage applied to the substrate support for holding the substrate using electrostatic attraction. The bias energy is a high-frequency power or a periodically generated voltage pulse. The substrate support has a base and a dielectric section. The base includes a substrate component and electrodes. The substrate component is formed of a dielectric or an insulator. Electrodes are formed on the upper surface of the substrate component. The electrodes constitute the upper surface of the base. The dielectric section provides a support surface on which a substrate can be mounted. The dielectric section extends from the upper surface of the base to the support surface and is formed solely of a dielectric. The bias power supply and the chuck power supply are electrically connected to the electrodes of the base.

[0027] In the above embodiment, since the electrodes are not disposed within the dielectric portion, the thickness of the dielectric portion can be reduced. Therefore, the impedance between the electrodes of the substrate and the substrate is reduced. As a result, bias energy can be efficiently supplied to the substrate.

[0028] In one exemplary embodiment, the bias power supply may also be electrically connected to the electrodes of the base via a capacitor. The bias power supply is DC isolated from the chuck power supply by the capacitor.

[0029] In one exemplary embodiment, the bias power supply and the suction cup power supply may also be electrically connected to the electrodes via wiring extending between the upper and lower surfaces of the substrate component.

[0030] In one exemplary embodiment, the plasma generation unit may also include a high-frequency power supply electrically connected to the electrodes of the base.

[0031] In one exemplary embodiment, the support surface of the dielectric portion may include a first region on which a substrate can be mounted and a second region on which an edge ring can be mounted. In this embodiment, the electrode of the base is a first electrode disposed below the first region. Alternatively, the base may also include a second electrode. The second electrode is disposed below the second region, forming the upper surface of the base, and is separate from the first electrode. A bias power supply or other bias power supply and other suction cup power supply are electrically connected to the second electrode.

[0032] In one exemplary embodiment, the second electrode may also comprise two electrodes constituting a bipolar electrode. Alternatively, other suction cup power supplies may comprise two power supplies respectively connected to the two electrodes.

[0033] In one exemplary embodiment, the bias power supply or other bias power supply may also be electrically connected to the second electrode via a capacitor. The bias power supply or other bias power supply is DC isolated from other chuck power supplies using the capacitor.

[0034] In one exemplary embodiment, a bias power supply or other bias power supply and other suction cup power supply may also be electrically connected to the second electrode via wiring extending between the upper and lower surfaces of the base component.

[0035] In another exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a plasma generation section, a bias power supply, and a suction cup power supply. The substrate support is disposed within the chamber. The plasma generation section is configured to generate plasma within the chamber. The bias power supply is configured to generate bias energy for attracting ions from the plasma to the substrate. The suction cup power supply is configured to generate a voltage applied to the substrate support for holding the substrate using electrostatic attraction. The bias energy is a high-frequency power or a periodically generated voltage pulse. The substrate support includes a base and a dielectric section. The dielectric section provides a support surface on which a substrate can be mounted, extending from the upper surface of the base to the support surface, and is formed solely of dielectric material. The support surface includes a first region on which a substrate can be mounted and a second region on which an edge ring can be mounted. The base includes a first portion and a second portion. The first portion is formed of a conductive material and is disposed below the first portion. The second portion is formed of a conductive material and is disposed below the second region, separate from the first portion. The bias power supply and suction cup power supply are electrically connected to the first part. The bias power supply or other bias power supply and other suction cup power supply are electrically connected to the second part.

[0036] In the above embodiment, since the electrodes are not disposed within the dielectric portion, the thickness of the dielectric portion can be reduced. Therefore, the impedance between the first portion of the base and the substrate, and the impedance between the second portion of the base and the edge ring, are reduced. As a result, bias energy can be efficiently supplied to the substrate and the edge ring.

[0037] In one exemplary embodiment, the second portion may also comprise two parts constituting a bipolar electrode. Alternatively, other suction cup power supplies may comprise two power supplies respectively connected to the two portions.

[0038] In one exemplary embodiment, the bias power supply may also be electrically connected to the first portion via a capacitor. The bias power supply is DC isolated from the chuck power supply using the capacitor. Alternatively, the bias power supply or other bias power supply may be electrically connected to the second portion via a capacitor. The bias power supply or other bias power supply is DC isolated from other chuck power supplies using the capacitor.

[0039] In one exemplary embodiment, the plasma generation unit may also include a high-frequency power supply electrically connected to a first portion of the base.

[0040] In yet another exemplary embodiment, a substrate processing method using any of the plasma processing apparatuses in the above exemplary embodiments is provided. The substrate processing method includes the step of placing a substrate on a dielectric portion of a substrate support. The substrate processing method further includes the step of generating plasma within a chamber using a plasma generation unit. The substrate processing method further includes the step of holding the substrate using the substrate support by supplying a voltage from a chuck power supply. The substrate processing method further includes the step of attracting ions from the plasma to the substrate by supplying bias energy from a bias power supply.

[0041] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the same or corresponding parts will be labeled with the same reference numerals in each drawing.

[0042] Figure 1 and Figure 2 This is a diagram that schematically illustrates a plasma processing apparatus of an exemplary embodiment.

[0043] In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. Furthermore, the plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas outlet for discharging gas from the plasma processing space. The gas supply port is connected to the gas supply unit 20 (described later), and the gas outlet is connected to the exhaust system 40 (described later). The substrate support 11 is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0044] The plasma generation unit 12 is configured to generate plasma from at least one process gas supplied to the plasma processing space. The plasma generated in the plasma processing space can be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR), helicon wave plasma (HWP), or surface wave plasma (SWP), etc. Furthermore, various types of plasma generation units, including AC (Alternating Current) plasma generation units and DC (Direct Current) plasma generation units, can be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes RF (Radio Frequency) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 200 kHz to 150 MHz.

[0045] The control unit 2 processes computer-executable commands that cause the plasma processing apparatus 1 to perform the various steps described herein. The control unit 2 may be configured to perform the various steps described herein to control the various elements of the plasma processing apparatus 1. In one embodiment, part or all of the control unit 2 may also be included in the plasma processing apparatus 1. The control unit 2 may, for example, include a computer 2a. The computer 2a may include, for example, a processing unit (CPU: Central Processing Unit) 2a1, a storage unit 2a2, and a communication interface 2a3. The processing unit 2a1 may be configured to perform various control actions based on a program stored in the storage unit 2a2. The storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or combinations thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).

[0046] The following describes a structural example of a capacitively coupled plasma processing apparatus 1, which is an example of a plasma processing apparatus 1. The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, and multiple power supply and exhaust systems 40. Furthermore, the plasma processing apparatus 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The sidewall 10a is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0047] The substrate support portion 11 is configured to support a substrate W placed thereon. The substrate support portion 11 is also configured to support an edge ring ER placed thereon. The edge ring ER is a ring-shaped component, formed, for example, from a material such as silicon or silicon carbide. The substrate W is disposed on the substrate support portion 11 and within the area surrounded by the edge ring ER. The substrate support portion 11 may also include a temperature control module configured to adjust at least one of the edge ring ER and the substrate W to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. Heat transfer fluids such as brine or gas can flow in the flow path. Additionally, the substrate support portion 11 may include a heat transfer gas supply portion configured to supply heat transfer gas between the back surface of the substrate W and the substrate support surface 111a.

[0048] The spray head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The process gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s through the gas diffusion chamber 13b and the plurality of gas inlets 13c. Additionally, the spray head 13 includes a conductive component. The conductive component of the spray head 13 functions as an upper electrode. Furthermore, in addition to the spray head 13, the gas inlet may also include one or more side gas injectors (SGIs) installed in one or more openings formed in the sidewall 10a.

[0049] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from its respective gas source 21 to the spray head 13 via its respective flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include at least one flow modulation device for modulating or pulsed the flow rate of the at least one process gas.

[0050] The multiple power sources include one or more high-frequency power sources constituting the plasma generation section, one or more bias power sources generating bias energy for attracting ions to the substrate, and one or more chuck power sources for holding the substrate W and the edge ring ER using electrostatic attraction. These power sources will be described later.

[0051] The exhaust system 40 can be connected, for example, to a gas outlet 10e located at the bottom of the plasma processing chamber 10. The exhaust system 40 may also include a pressure regulating valve and a vacuum pump. The pressure within the plasma processing space 10s can be regulated using the pressure regulating valve. The vacuum pump may also include a turbomolecular pump, a dry pump, or a combination thereof.

[0052] The following is for reference Figure 3 . Figure 3 This is a diagram showing a substrate support and multiple power sources of a plasma processing apparatus according to an exemplary embodiment. Figure 3 The substrate support portion 11A shown can be used as a substrate support portion 11 of the plasma processing apparatus 1.

[0053] The substrate support portion 11A includes a base 16 and a dielectric portion 18. The base 16 includes a substrate component 16b and one or more electrodes. The substrate component 16b is formed of a dielectric or an insulator. The substrate component 16b has a generally disk-shaped form. The substrate component 16b is formed, for example, of a ceramic such as aluminum nitride or aluminum oxide.

[0054] One or more electrodes are formed on the upper surface of the base component 16b. The one or more electrodes of the base 16 constitute the upper surface 16u of the base 16. The one or more electrodes of the base 16 may be conductive films. In one embodiment, the base 16 may include a first electrode 161 and a second electrode 162 as one or more electrodes. The first electrode 161 includes the center of the upper surface 16u and is generally circular. The second electrode 162 is separate from the first electrode 161. The second electrode 162 may also extend circumferentially surrounding the first electrode 161. That is, the second electrode 162 may also have an annular shape.

[0055] In one embodiment, the second electrode 162 may also include two electrodes 162a and 162b constituting a bipolar electrode. The two electrodes 162a and 162b are separated from each other. Each of the two electrodes 162a and 162b may also have an annular shape. One of the two electrodes 162a and 162b may also extend circumferentially outward relative to the other. Alternatively, each of the two electrodes 162a and 162b may be composed of a plurality of electrodes arranged circumferentially and separated from each other.

[0056] In one embodiment, the base 16 may also include an electrode 163. The electrode 163 may also be a conductive film formed on the lower surface of the substrate member 16b. In one embodiment, the base 16 may also include a plurality of wirings 165, 166a, and 166b. The plurality of wirings 165, 166a, and 166b extend between the upper and lower surfaces of the substrate member 16b. One or more wirings 165 connect the first electrode 161 and the electrode 163 to each other. One or more wirings 166a connect to the electrode 162a. One or more wirings 166b connect to the electrode 162b. Each of the plurality of wirings 165, 166a, and 166b may also be a through-hole formed in the substrate member 16b. Alternatively, each of the plurality of wirings 165, 166a, and 166b may also be a conductor wire formed along the surface of the substrate member 16b. In addition, electrode 163 can be a planar electrode or a wiring that connects the power supply points for the first electrode 161, electrode 162a, and electrode 162b to wirings 165, 166a, and 166b, respectively.

[0057] The dielectric portion 18 provides a support surface 18s on which the substrate W can be mounted. The dielectric portion 18 extends from the upper surface 16u of the base 16 to the support surface 18s and is formed solely of dielectric material. The dielectric portion 18 is formed, for example, of a ceramic such as aluminum nitride or aluminum oxide.

[0058] In one embodiment, the support surface 18s of the dielectric portion 18 may also include a first region 181 and a second region 182. The first region 181 includes the center of the support surface 18s and is generally circular. The substrate W can be placed on the first region 181. The first region 181 extends above the first electrode 161 of the base 16. That is, the first electrode 161 is disposed below the first region 181.

[0059] The second region 182 extends radially outward in a circumferential direction relative to the first region 181. That is, the second region 182 has an annular shape. An edge ring ER can be mounted on the second region 182. The second region 182 extends above the second electrode 162 of the base 16. That is, the second electrode 162 (electrodes 162a and 162b) is disposed below the second region 182.

[0060] In one embodiment, the substrate support portion 11 may further include an insulator portion 11i. The insulator portion 11i covers the end face (outer peripheral surface) of the first electrode 161 and the inner end face (inner peripheral surface) of the second electrode 162 to conceal them from contact with the plasma. In one embodiment, the dielectric portion 18 may also be separated into a portion providing a first region 181 and a portion providing a second region 182. The insulator portion 11i may be located between the outer peripheral surface of the portion providing the first region 181 and the inner peripheral surface of the portion providing the second region 182.

[0061] The plasma processing apparatus 1 may also include multiple power sources, such as suction cup power sources 31, 32, and 33. Suction cup power sources 31, 32, and 33 are either DC power sources or variable DC power sources. Suction cup power source 31 is connected to the first electrode 161 via a switch 31s, an electrode 163, and one or more wirings 165. When a DC voltage from the suction cup power source 31 is applied to the first electrode 161, the substrate W is attracted to the first region 181 by electrostatic attraction and held by the substrate support portion 11A.

[0062] The suction cup power supply 32 is connected to the electrode 162a via a switch 32s and one or more wires 166a. The suction cup power supply 33 is connected to the electrode 162b via a switch 33s and one or more wires 166b. When a DC voltage from the suction cup power supply 32 is applied to the electrode 162a and a DC voltage from the suction cup power supply 33 is applied to the electrode 162b, the edge ring ER is attracted to the second region 182 by electrostatic attraction and held by the substrate support portion 11A.

[0063] The plasma processing device 1 has multiple power supplies, including one or more high-frequency power supplies and one or more bias power supplies. Figure 3 In the example shown, the multiple power supplies include high-frequency power supply 51, high-frequency power supply 52, bias power supply 53, and bias power supply 54.

[0064] High-frequency power supplies 51 and 52 constitute a plasma generation unit in one embodiment. High-frequency power supplies 51 and 52 each generate high-frequency power with frequencies suitable for generating plasma from gas within chamber 10. The high-frequency power generated by each of high-frequency power supplies 51 and 52 has, for example, a frequency in the range of 13 MHz to 150 MHz.

[0065] The high-frequency power supply 51 is connected to the first electrode 161 via a matching unit 51m, an electrode 163, and one or more wirings 165. The matching unit 51m includes a matching circuit for matching the impedance of the load of the high-frequency power supply 51 to the output impedance of the high-frequency power supply 51.

[0066] High-frequency power supply 52 is connected to electrode 162a via matching adapter 52m, capacitor 54ca, and one or more wirings 166a. Additionally, high-frequency power supply 52 is connected to electrode 162b via matching adapter 52m, capacitor 54cb, and one or more wirings 166b. Matching adapter 52m includes a matching circuit for matching the impedance of the load of high-frequency power supply 52 to the output impedance of high-frequency power supply 52. ​​Capacitor 54ca DC-isolates high-frequency power supply 52 from chuck power supply 32. Capacitor 54cb DC-isolates high-frequency power supply 52 from chuck power supply 33.

[0067] Bias power supplies 53 and 54 generate bias energy for attracting ions to the substrate W and the edge ring ER. The bias energy can be a high-frequency bias power, for example, having a frequency in the range of 100 kHz to 13.56 MHz. Alternatively, the bias energy can also be periodically generated voltage pulses. The voltage pulses have positive or negative polarity. The voltage pulses can have arbitrary waveforms. The voltage pulses can also be negative DC voltage pulses. The voltage pulses are generated periodically with a repetition frequency in the range of 100 kHz to 13.56 MHz.

[0068] The bias power supply 53 is connected to the first electrode 161 via a matching adapter 53m, a capacitor 53c, an electrode 163, and one or more wirings 165. The matching adapter 53m includes a matching circuit for matching the impedance of the load of the bias power supply 53 to the output impedance of the bias power supply 53. The capacitor 53c is configured to DC isolate the bias power supply 53 from the chuck power supply 31.

[0069] The bias power supply 54 is connected to electrode 162a via a matching adapter 54m, capacitor 54ca, and one or more wirings 166a. Additionally, the bias power supply 54 is connected to electrode 162b via a matching adapter 54m, capacitor 54cb, and one or more wirings 166b. The matching adapter 54m includes a matching circuit for matching the impedance of the load of the bias power supply 54 to the output impedance of the bias power supply 54. The capacitor 54ca is configured to DC isolate the bias power supply 54 from the chuck power supply 32. The capacitor 54cb is configured to DC isolate the bias power supply 54 from the chuck power supply 33.

[0070] In the plasma processing apparatus 1, since the electrodes are not disposed within the dielectric portion 18, the thickness of the dielectric portion 18 can be reduced. Therefore, the impedance between the first electrode 161 of the base 16 and the substrate W decreases. Furthermore, the impedance between the electrodes 162a and 162b of the base 16 and the edge ring ER decreases. As a result, bias energy is efficiently supplied to the substrate W. Additionally, the bias energy is efficiently supplied to the edge ring ER. Furthermore, high-frequency power is efficiently coupled to the plasma via the substrate W and the edge ring ER. Therefore, the bias energy can be reduced. Additionally, the high-frequency power can be reduced. Therefore, heating of the electrodes, contacts, etc., of the substrate support portion 11A can be suppressed.

[0071] Furthermore, since the base component 16b of the base 16 is formed of a dielectric or an insulator, the difference between the thermal expansion coefficient of the base 16 and the thermal expansion coefficient of the dielectric portion 18 is small. Therefore, damage to the substrate support portion 11A caused by the difference between the thermal expansion coefficient of the base 16 and the thermal expansion coefficient of the dielectric portion 18 can be suppressed.

[0072] In one embodiment, the dielectric section 18 may also satisfy the following (1).

[0073] 0.5×C W0 / S W <C FO / S F <1.5×C W0 / S W …(1)

[0074] In equation (1), C W0 It is the electrostatic capacitance between the base 16 and the substrate W. W C is the area of ​​a principal surface of substrate W (e.g., the lower surface or the surface in contact with the plasma). FO It is the electrostatic capacitance between base 16 and edge ring ER. F It is the area of ​​a principal surface of the edge ring (e.g., the lower surface or the surface in contact with the plasma). By satisfying equation (1), the difference between the power density of the high-frequency power coupled to the plasma via the substrate W and the power density of the high-frequency power coupled to the plasma via the edge ring ER is reduced. Therefore, the non-uniformity of plasma density within the chamber is suppressed.

[0075] In one embodiment, the substrate support portion 11A may also be configured such that the electrostatic capacitance between the substrate W and the edge ring ER is 10nF or less or 3nF or less. This allows for the suppression of electrical coupling between the substrate W and the edge ring ER.

[0076] The following is for reference Figure 4 . Figure 4 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to another exemplary embodiment. Figure 4 The substrate support portion 11B shown can be used as a substrate support portion 11 of the plasma processing apparatus 1. The substrate support portion 11B also includes one or more wirings 165a and one or more wirings 165b. The one or more wirings 165a and one or more wirings 165b extend between the upper and lower surfaces of the substrate member 16b. The one or more wirings 165a connect electrode 163 and electrode 162a to each other. The one or more wirings 165b connect electrode 163 and electrode 162b to each other.

[0077] One or more wirings 165a and one or more wirings 165b may each be a through-hole formed in the base member 16b. Alternatively, one or more wirings 165a and one or more wirings 165b may each be a conductor wire formed along the surface of the base member 16b.

[0078] exist Figure 4 In the example shown, the plasma processing apparatus 1 does not include a high-frequency power supply 52 and a matching unit 52m. Figure 4 In the example shown, the high-frequency power supply 51 is connected to electrode 162a via a matching adapter 51m, electrode 163, and one or more wirings 165a. Additionally, the high-frequency power supply 51 is connected to electrode 162b via a matching adapter 51m, electrode 163, and one or more wirings 165b. Figure 4 In the example shown, high-frequency power from a single high-frequency power source 51 is distributed to the first electrode 161 and the second electrode 162. Furthermore, Figure 4 The other structures in the examples shown are respectively with Figure 3 The corresponding structures in the examples shown are the same.

[0079] The following is for reference Figure 5 . Figure 5 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. (See diagram) Figure 5 As shown, the plasma processing device 1 may also exclude the high-frequency power supply 52, the matching device 52m, the bias power supply 54, and the matching device 54m.

[0080] like Figure 5As shown, the high-frequency power supply 51 is connected to electrode 162a via a matching connector 51m, impedance circuit 56, capacitor 53ca, and wiring 166a. Additionally, the high-frequency power supply 51 is connected to electrode 162b via a matching connector 51m, impedance circuit 56, capacitor 53cb, and wiring 166b. The bias power supply 53 is connected to electrode 162a via a matching connector 53m, impedance circuit 56, capacitor 53ca, and wiring 166a. Additionally, the bias power supply 53 is connected to electrode 162b via a matching connector 53m, impedance circuit 56, capacitor 53cb, and wiring 166b. Capacitor 53ca is configured to DC isolate the high-frequency power supply 51 and bias power supply 53 from the chuck power supply 32. Capacitor 53cb is configured to DC isolate the high-frequency power supply 51 and bias power supply 53 from the chuck power supply 33.

[0081] Impedance circuit 56 has variable impedance. Impedance circuits may include variable impedance elements such as variable capacitors. Figure 5 In the plasma processing apparatus 1 of the example shown, high-frequency power from a single high-frequency power supply 51 is distributed to the first electrode 161 and the second electrode 162. Additionally, in Figure 5 In the plasma processing apparatus 1 of the example shown, bias energy from a single bias power supply 53 is distributed to the first electrode 161 and the second electrode 162. The respective distribution ratio of high-frequency power and bias energy is set by adjusting the variable impedance of the impedance circuit 56. Furthermore, Figure 5 The other structures in the examples shown are respectively with Figure 3 The corresponding structures in the examples shown are the same.

[0082] The following is for reference Figure 6 . Figure 6 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. Figure 6 The substrate support portion 11D shown can be used as a substrate support portion 11 of the plasma processing apparatus 1. The substrate support portion 11D has a base 16D instead of a base 16. The base 16D includes a first portion 161D and a second portion 162D.

[0083] The first part 161D and the second part 162D are each formed of a conductive material. The first part 161D and the second part 162D are each formed of a metal, such as aluminum, or a metal-ceramic composite material.

[0084] The first portion 161D is disposed below the first region 181. The first portion 161D includes the center of the base 16D and is generally disk-shaped. The second portion 162D is disposed below the second region 182. The second portion 162D extends circumferentially outward from the first portion 161D. The second portion 162D may also have a generally annular shape when viewed from above. The second portion 162D is separate from the first portion 161D. The gap between the first portion 161D and the second portion 162D may also be filled with an insulating material (insulator portion 11i) or a dielectric material.

[0085] In one embodiment, the second portion 162D may also include portions 162e and 162f. Portions 162e and 162f constitute a bipolar electrode. Portions 162e and 162f extend circumferentially outward from the radial side of the first portion 161D, respectively. Portions 162e and 162f may each have a generally annular shape when viewed from above. Portion 162f may also extend circumferentially outward from the radial side of portion 162e. Portions 162e and 162f are separated from each other. The gap between portions 162e and 162f may also be filled with an insulating or dielectric material.

[0086] The suction cup power supply 31 is connected to the first part 161D via a switch 31s. When a DC voltage from the suction cup power supply 31 is applied to the first part 161D, the substrate W is attracted to the first region 181 by electrostatic attraction and held by the substrate support portion 11D.

[0087] The suction cup power supply 32 is connected to part 162e via switch 32s. The suction cup power supply 33 is connected to part 162f via switch 33s. When a DC voltage from the suction cup power supply 32 is applied to part 162e and a DC voltage from the suction cup power supply 33 is applied to part 162f, the edge ring ER is attracted to the second region 182 by electrostatic attraction and held by the substrate support 11D.

[0088] High-frequency power supply 51 is connected to the first part 161D via matching connector 51m. High-frequency power supply 52 is connected to part 162e via matching connector 52m and capacitor 54ca. Additionally, high-frequency power supply 52 is connected to part 162f via matching connector 52m and capacitor 54cb.

[0089] Bias power supply 53 is connected to the first portion 161D via matching connector 53m and capacitor 53c. Bias power supply 54 is connected to portion 162e via matching connector 54m and capacitor 54ca. Additionally, bias power supply 54 is connected to portion 162f via matching connector 54m and capacitor 54cb.

[0090] In the substrate support portion 11D, since the electrodes are not disposed within the dielectric portion 18, the thickness of the dielectric portion 18 can be reduced. Therefore, the impedance between the first portion 161D of the base 16D and the substrate W, and the impedance between the second portion 162D of the base 16D and the edge ring ER, are reduced. As a result, bias energy can be efficiently supplied to the substrate W and the edge ring ER.

[0091] In one embodiment, the dielectric section 18 may also satisfy the following (2).

[0092] 0.5×C W0 / S W <C FO / S F <1.5×C W0 / S W …(2)

[0093] In equation (2), C W0 It is the electrostatic capacitance between the base 16D and the substrate W. W C is the area of ​​a principal surface of substrate W (e.g., the lower surface or the surface in contact with the plasma). FO It is the electrostatic capacitance between the base 16D and the edge ring ER. F It is the area of ​​a principal surface (e.g., the lower surface or the surface in contact with the plasma) of the edge ring ER. By satisfying equation (2), the difference between the power density of the high-frequency power coupled to the plasma via the substrate W and the power density of the high-frequency power coupled to the plasma via the edge ring ER can be reduced. Therefore, the non-uniformity of plasma density within the chamber can be suppressed.

[0094] In one embodiment, the substrate support portion 11D may also be configured such that the electrostatic capacitance between the substrate W and the edge ring ER is 10nF or less or 3nF or less. This suppresses electrical coupling between the substrate W and the edge ring ER.

[0095] The following is for reference Figure 7 . Figure 7 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. (See diagram) Figure 7 As shown, the plasma processing device 1 may also exclude the high-frequency power supply 52, the matching device 52m, the bias power supply 54, and the matching device 54m.

[0096] like Figure 7As shown, the high-frequency power supply 51 is connected to portion 162e via matching adapter 51m, impedance circuit 56, and capacitor 53ca. Additionally, the high-frequency power supply 51 is connected to portion 162f via matching adapter 51m, impedance circuit 56, and capacitor 53cb. The bias power supply 53 is connected to portion 162e via matching adapter 53m, impedance circuit 56, and capacitor 53ca. Additionally, the bias power supply 53 is connected to portion 162f via matching adapter 53m, impedance circuit 56, and capacitor 53cb.

[0097] exist Figure 7 In the plasma processing apparatus 1 of the example shown, high-frequency power from a single high-frequency power supply 51 is distributed to a first portion 161D and a second portion 162D. Additionally, in Figure 7 In the plasma processing apparatus 1 of the example shown, bias energy from a single bias power supply 53 is distributed to a first portion 161D and a second portion 162D. The respective distribution ratio of high-frequency power and bias energy can be set by adjusting the variable impedance of the impedance circuit 56. Furthermore, Figure 7 The other structures in the examples shown are respectively with Figure 6 The corresponding structures in the examples shown are the same.

[0098] The following is for reference Figure 8 . Figure 8 This diagram illustrates a substrate support and multiple power sources of a plasma processing apparatus according to another exemplary embodiment. In the substrate support 11A and substrate support 11B described above, the second electrode 162 comprises two electrodes. In contrast, in… Figure 8 In the substrate support portion 11E shown, the second electrode 162E is configured as a single electrode. A wiring 166 extending from the lower surface of the substrate member 16b through an end face is connected to the second electrode 162E. In addition, one or more wirings 165 may each connect the electrode 163 to the first electrode 161 via a groove formed in the peripheral portion of the substrate member 16b.

[0099] The suction cup power supply 32 is connected to the second electrode 162E via switch 32s and wiring 166. Additionally, the high-frequency power supply 52 is connected to the second electrode 162E via matching adapter 52m, capacitor 54c, and wiring 166. Furthermore, the bias power supply 54 is connected to the second electrode 162E via matching adapter 54m, capacitor 54c, and wiring 166. Alternatively, high-frequency power from the high-frequency power supply 51 can be distributed to the first electrode 161 and the second electrode 162E. Additionally, bias energy from the bias power supply 53 can be distributed to the first electrode 161 and the second electrode 162E.

[0100] The following is for reference Figure 9 . Figure 9This diagram illustrates a substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. In the substrate support 11D described above, the second portion 162D comprises two portions 162e and 162f. In contrast, in… Figure 9 In the base 16F of the substrate support portion 11F shown, the second part 162F is configured as a single part.

[0101] The suction cup power supply 32 is connected to the second part 162F via switch 32s. Additionally, the high-frequency power supply 52 is connected to the second part 162F via matching adapter 52m and capacitor 54c. Furthermore, the bias power supply 54 is connected to the second part 162F via matching adapter 54m and capacitor 54c. Alternatively, high-frequency power from the high-frequency power supply 51 can be distributed to the first part 161D and the second part 162F. Additionally, bias energy from the bias power supply 53 can be distributed to the first part 161D and the second part 162F.

[0102] The following is for reference Figure 10 . Figure 10 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. Figure 10 The example shown is Figure 3 A variation of the example shown. In Figure 10 In the example shown, a flow path 16f is formed in the base 16. A heat medium (e.g., refrigerant) is supplied from the feeder to the flow path 16f. The heat medium flows in the flow path 16f and returns to the feeder. The flow path 16f can be formed in a manner that has a relatively wide cross-sectional area without compromising the mechanical strength of the base 16. Furthermore, the flow path 16f in Figure 3 Other examples besides those shown can also be formed in base 16.

[0103] The following is for reference Figure 11 . Figure 11 This is a diagram showing the substrate support and multiple power sources of a plasma processing apparatus according to yet another exemplary embodiment. Figure 11 The example shown is Figure 6 A variation of the example shown. In Figure 11 In the example shown, a flow path 16f is formed in the base 16D. A heat medium (e.g., refrigerant) is supplied from the feeder to the flow path 16f. The heat medium flows in the flow path 16f and returns to the feeder. The flow path 16f can be formed to have a wide cross-sectional area within limits that do not impair the mechanical strength of the base 16D. Furthermore, the flow path 16f in Figure 6 Other examples besides the one shown can also be formed in the base 16D. Additionally, the flow path 16f in... Figure 9 In the example shown, it can also be formed in base 16F.

[0104] The following is for reference Figure 12 . Figure 12 This is a flowchart illustrating a substrate processing method of an exemplary implementation. Figure 12 The substrate processing method shown (hereinafter referred to as "Method MT") can be performed using the plasma processing apparatus 1 described above. In Method MT, each part of the plasma processing apparatus 1 can be controlled by the control unit 2. Method MT includes steps STa, STb, STc, and STd.

[0105] In step STa, the substrate W is placed on the dielectric portion 18 of the substrate support. Steps STb, STc, and STd are performed while the substrate W is placed on the dielectric portion 18.

[0106] In step STb, plasma is generated within chamber 10 using a plasma generation unit. In step STb, processing gas is supplied into chamber 10 from gas supply unit 20. Additionally, in step STb, the pressure within chamber 10 is reduced to a specified pressure using exhaust system 40. Furthermore, in step STb, high-frequency power is supplied to generate plasma from the processing gas.

[0107] In step STc, the substrate W is held by the substrate support by applying voltage using the chuck power supply 31. Alternatively, the edge ring ER can also be held by the substrate support in step STc by applying voltage using the chuck power supplies 32 and 33. Alternatively, the substrate support can hold the edge ring ER from a point prior to step STb.

[0108] Step STd is performed during plasma generation in step STb. In step STd, bias energy is supplied, and ions from the plasma are attracted to the substrate W.

[0109] The above descriptions illustrate various illustrative embodiments, but the embodiments are not limited to those described above. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0110] For example, the high-frequency power from the high-frequency power supply may be supplied to the upper electrode instead of the substrate support. Alternatively, in another embodiment, the plasma processing apparatus may be a type other than capacitively coupled plasma processing apparatus. Such a plasma processing apparatus may be an inductively coupled plasma processing apparatus, an electron cyclotron resonance (ECR) plasma processing apparatus, or a plasma processing apparatus that uses surface waves such as microwaves to generate plasma.

[0111] As can be seen from the above description, various embodiments of the present invention have been described in this specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of the invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are given by the appended claims.

[0112] Explanation of reference numerals in the attached figures

[0113] 1…Plasma processing device, 11…Substrate support, 16…Base, 18…Dielectric part, 51…High frequency power supply, 53…Bias power supply, 31…Cup power supply.

Claims

1. A plasma processing device, characterized in that, include: chamber; The substrate support portion is disposed within the cavity; A plasma generation unit configured to generate plasma within the cavity; A bias power supply configured to generate bias energy for attracting ions from the plasma to the substrate; and The suction cup power supply is configured to generate a voltage applied to the substrate support portion in order to hold the substrate using electrostatic attraction. The bias energy is a high-frequency power or a periodically generated voltage pulse. The substrate support portion includes: A base comprising a base component formed of a dielectric or an insulator and an electrode formed on the upper surface of the base component, the electrode constituting the upper surface of the base; as well as A dielectric portion formed solely of dielectric material provides a support surface on which a substrate can be mounted, extending from the upper surface of the base to the support surface. The bias power supply and the suction cup power supply are electrically connected to the electrodes of the base. The support surface includes a first region on which a substrate can be placed and a second region on which an edge ring can be placed. The electrode is a first electrode disposed below the first region. The base also includes a second electrode. The second electrode is disposed below the second region, forming the upper surface of the base, and is separate from the first electrode. The bias power supply or other bias power supply and other suction cup power supply are electrically connected to the second electrode. The dielectric part satisfies equation (1). 0.5×C W0 / S W <C FO / S F <1.5×C W0 / S W …(1) In the above equation (1), C W0 It is the electrostatic capacitance between the base and the substrate, S W C is the area of ​​one principal surface of the substrate. FO It is the electrostatic capacitance between the base and the edge ring, S F It is the area of ​​one of the principal faces of the edge ring.

2. The plasma processing apparatus as described in claim 1, characterized in that: The bias power supply is electrically connected to the electrode via a capacitor and is DC isolated from the suction cup power supply.

3. The plasma processing apparatus as described in claim 1 or 2, characterized in that: The bias power supply and the suction cup power supply are electrically connected to the electrodes via wiring extending between the upper and lower surfaces of the base component.

4. The plasma processing apparatus as described in claim 1 or 2, characterized in that: The plasma generation unit includes a high-frequency power supply electrically connected to the electrodes of the base.

5. The plasma processing apparatus as described in claim 1, characterized in that: The second electrode comprises two electrodes constituting a bipolar electrode. The other suction cup power source includes two power sources respectively connected to the two electrodes.

6. The plasma processing apparatus as described in claim 1 or 5, characterized in that: The bias power supply or other bias power supply is electrically connected to the second electrode via a capacitor and is DC isolated from the other suction cup power supply.

7. The plasma processing apparatus as described in claim 1 or 5, characterized in that: The bias power supply or the other bias power supply and the other suction cup power supply are electrically connected to the second electrode via wiring extending between the upper and lower surfaces of the base component.

8. A substrate processing method, characterized in that: The substrate processing method uses the plasma processing apparatus according to any one of claims 1 to 7, comprising: The step of placing a substrate on the dielectric portion of the substrate support portion; The step of generating plasma in the chamber using the plasma generating unit; The step of holding the substrate using the substrate support by supplying voltage from the chuck power source; and The step of attracting ions from the plasma to the substrate by supplying bias energy from the bias power source.

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