A method for improving hydrogen response performance of hydrogen-induced color change film based on AAO template

Abstract

The application discloses a method for improving hydrogen response performance of a hydrogen-induced color change film based on an AAO template, and the film comprises an AAO template layer, a hydrogen-sensitive reaction layer, a catalytic layer and a protective layer arranged on a substrate in sequence. The preparation method comprises the following steps: transferring the AAO template to the substrate, then sputtering the hydrogen-sensitive reaction layer on the template, then growing the catalytic layer on the hydrogen-sensitive reaction layer in situ, and finally depositing the protective layer on the catalytic layer. The application utilizes the transparent feature of the AAO template, enlarges the specific surface area of the hydrogen-induced color change film through the AAO template, and conveniently and quickly realizes the improvement of the hydrogen absorption and desorption rate of the hydrogen-induced color change film. The method has the advantages of simple process, strong repeatability and obvious performance improvement, and has important application prospect in the hydrogen gas sensing field.

Description

Technical Field

[0001] This invention belongs to the field of hydrogen-chromic thin film technology, and relates to a method for optimizing the performance of hydrogen-chromic thin films by changing the surface structure of hydrogen-chromic thin films through AAO templates, and particularly relates to a method for improving the hydrogen response performance of hydrogen-chromic thin films based on AAO templates. Background Technology

[0002] Hydrogen energy is an abundant, green, low-carbon, and widely applicable secondary energy source. It can help the large-scale consumption of renewable energy, achieve large-scale peak shaving of the power grid and cross-seasonal and cross-regional energy storage, and accelerate the decarbonization of industries, buildings, transportation, and other fields. As a zero-carbon energy carrier, hydrogen energy is receiving increasing attention.

[0003] However, hydrogen is a flammable, easily diffused, and easily leaked gas, posing a risk of combustion and explosion. Because hydrogen has a combustion range of 4.0% to 75.6% in air and an extremely low minimum ignition energy, it is highly flammable. Therefore, hydrogen safety is a critical concern, and hydrogen sensors capable of real-time monitoring of hydrogen concentration with high sensitivity and safety are essential for the development of the hydrogen energy industry.

[0004] Currently, most hydrogen sensors on the market are semiconductor or electrochemical types, which are complex in structure, expensive, susceptible to interference from impurity gases, and have narrow measurement ranges, making them unable to monitor and assess the safety of hydrogen leaks over a wide concentration range. Optical hydrogen sensors, on the other hand, have the advantages of strong resistance to electromagnetic interference, avoiding direct contact between the inductor wire and hydrogen, resulting in high safety. They also offer high sensitivity and measurement accuracy, enabling real-time response and possessing broader application prospects.

[0005] Hydrogen sensors based on hydrochromic thin films are currently one of the research directions for optical hydrogen sensors, and their performance mainly depends on the hydrogen-sensitive properties of the hydrochromic film. However, the hydrogen absorption and desorption rates and cycle durability of existing magnesium-based hydrochromic films need further improvement to meet the response and durability requirements of hydrogen sensors. On the other hand, the specific surface area of ​​the film is an important factor affecting its hydrogen response rate and extent, and most current hydrochromic films have a dense structure with a small specific surface area, which limits the improvement of the hydrogen response rate. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of the prior art and provide a method for improving the hydrogen response performance of hydrogen-chromatic thin films based on AAO templates. Specifically, it is a method and application for improving the performance of magnesium-based hydrogen-chromatic thin films by controlling the surface structure of the film through AAO templates, which has the advantages of simple operation and fast hydrogen adsorption and desorption speed.

[0007] The objective of this invention is achieved through the following technical solution:

[0008] In a first aspect, the present invention provides a hydrogen-chromatic thin film with enhanced hydrogen response performance based on an AAO template, the hydrogen-chromatic thin film comprising an AAO template layer, a hydrogen-sensitive reaction layer, a catalytic layer and a protective layer sequentially disposed on a substrate.

[0009] As a preferred embodiment, the thickness of the AAO template layer is 50-600 nm, the pore size is 50-1000 nm, and the pore spacing is 60-1000 nm. If the pore size of the AAO template is too small, it will cause the film layer to agglomerate, resulting in a decrease in the transmittance range and an increase in the hydrogen absorption time; if the pore size is large and the pore spacing is small, it will result in a small specific surface area, which is not conducive to hydrogen diffusion, leading to an increase in the hydrogen absorption time and affecting the performance of the obtained hydrogen-induced color-changing film.

[0010] More preferably, the thickness of the AAO template layer is 300-600nm, the pore size is 150-400nm, and the pore spacing is 400-600nm; most preferably, the thickness of the AAO template layer is 450nm, the pore size is 200-310nm, and the pore spacing is 300-500nm.

[0011] As a preferred embodiment, the material of the hydrogen-sensitive reaction layer is selected from any one of magnesium-rare earth, magnesium-transition metal, and magnesium-transition metal oxide.

[0012] The thickness of the hydrogen-sensitive reaction layer is 10-100 nm.

[0013] As a preferred embodiment, the catalyst layer is made of Pd or a Pd-containing alloy and has a thickness of 3-20 nm.

[0014] As a preferred embodiment, the protective layer is a fluorocarbon film with a thickness of 10-50 nm.

[0015] As a preferred embodiment, the substrate includes any one of quartz glass, optical fiber, conductive glass, plexiglass, and flexible glass.

[0016] Secondly, this invention provides a method for improving the hydrogen response performance of hydrogen-induced color-changing thin films based on AAO templates, comprising the following steps:

[0017] An AAO template is transferred onto a substrate, and a hydrogen-sensitive reaction layer is deposited on the formed AAO template layer using DC magnetron sputtering co-sputtering. A catalytic layer is then deposited on the hydrogen-sensitive reaction layer using DC magnetron sputtering. Finally, a protective layer is deposited on the catalytic layer using chemical deposition to obtain a hydrogen-induced color-changing film with improved hydrogen response performance.

[0018] As a preferred embodiment, the method specifically includes the following steps:

[0019] S1. Prepare SPM solution with concentrated sulfuric acid and hydrogen peroxide, place the substrate in it and heat it in a water bath for hydrophilic treatment, then rinse the substrate with deionized water and blow it dry to obtain the hydrophilic treated substrate.

[0020] S2. After pre-wetting the AAO template with an organic solvent, transfer it to the hydrophilic substrate, and then clean the surface of the obtained AAO template layer with an organic solvent to complete the transfer of the AAO template.

[0021] S3. On the substrate with the transferred AAO template layer obtained in step S2, a hydrogen-sensitive reaction layer is deposited on the AAO template layer using DC magnetron sputtering co-sputtering to obtain a porous hydrogen-sensitive reaction layer.

[0022] S4. A catalyst layer is deposited in situ on the hydrogen-sensitive reaction layer by DC magnetron sputtering, so that it inherits the porous structure formed in S3.

[0023] S5. A protective layer is deposited on the catalyst layer using chemical vapor deposition, thus obtaining the desired result.

[0024] As a preferred embodiment, in step S1, the volume ratio of concentrated sulfuric acid to hydrogen peroxide is 3:1; the water bath heating conditions are: heating at 75-85°C for 50-70 minutes.

[0025] In step S2, the organic solvent is acetone.

[0026] As a preferred embodiment, in step S3, during the deposition of the hydrogen-sensitive reaction layer on the AAO template layer using the magnetron sputtering co-sputtering method, the target material used is a magnesium target and other element targets; the other element targets are selected from any one of rare earth element targets, transition metal targets, and transition metal oxide targets.

[0027] The sputtering power of the magnesium target used is 30–200 W, while the sputtering power of other element targets is 40–300 W, with a total sputtering time of 30–100 s. Long sputtering times and excessively high sputtering power can damage the porous structure formed in step S3.

[0028] As a preferred embodiment, in step S4, during the in-situ deposition of the catalyst layer on the hydrogen-sensitive reaction layer using DC magnetron sputtering, the sputtering power of the target material is 50-100W and the sputtering time is 10-60s. Excessive sputtering time and excessively high sputtering power will destroy the porous structure formed in step S4; while excessively short sputtering time will result in insufficient catalyst coverage, affecting the catalytic effect.

[0029] As a preferred embodiment, in step S5, during the process of depositing a protective layer on the catalyst layer using the chemical vapor deposition method, the working gas pressure is 4-10 Pa, the working gas flow rate is 40-80 sccm, the gas excitation power is 400-800 W, and the deposition time is 30-100 s.

[0030] As a preferred embodiment, in steps S3 and S4, before sputtering the target, a pre-sputtering cleaning step is also included; during the pre-sputtering, there should be a vertical baffle in front of the target to ensure the removal of contaminants and oxide layers on the target surface, and also to prevent target ions from sputtering onto the substrate. The baffle is opened during deposition.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] 1) This invention obtains a hydrogen-chromic thin film with an ordered porous structure by introducing an AAO template. The AAO template is transparent, has little impact on the transmittance range, and is stable and not easily damaged during sputtering, making it suitable for the preparation of films for optical hydrogen sensors.

[0033] 2) The preparation process of the thin film of the present invention is simple. By changing parameters such as the pore size and thickness of the AAO template, the performance of the thin film can be further controlled, which is conducive to the research and development of hydrogen-induced color-changing thin films suitable for different working conditions.

[0034] 3) This invention expands the specific surface area of ​​the film by controlling the porous structure on the film surface, which provides a pathway for hydrogen diffusion, thereby achieving a faster hydrogenation and dehydrogenation rate.

[0035] 4) The porous hydrogen-chromic thin film prepared by the present invention can release the stress generated by volume expansion through micropores during cycling, preventing the film layer from cracking and exhibiting good cycling performance.

[0036] 5) The hydrogen-chromic thin film prepared by the method of the present invention has a simple process and low cost, faster hydrogen absorption and desorption time, and long cycle life, and has important application prospects in the field of hydrogen sensors. Attached Figure Description

[0037] Other features, objects, and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings:

[0038] Figure 1 This is a schematic diagram of the film structure of the hydrogen-chromic thin film based on the AAO template prepared in this invention; where X in Mg-X represents other elements, such as Sc, Y, etc.

[0039] Figure 2 The images shown are scanning electron microscope (SEM) images and EDS elemental analysis results of the hydrogen-chromic thin film based on the AAO template prepared according to this invention; wherein, Figure 2 a is a scanning electron microscope image. Figure 2 b represents the distribution of Al elements. Figure 2 c represents the distribution of O elements. Figure 2 d represents the distribution of Mg element. Figure 2 e represents the distribution of elements in Sc. Figure 2 f represents the distribution of Pd elements; Figure 2 a- Figure 2 The scale bars in f are all 5μm;

[0040] Figure 3 The comparison results show the hydrogen absorption curves of the hydrogen-chromic thin film sample (CF / Pd / Mg-Sc / AAO) based on the AAO template prepared in this invention and the hydrogen-chromic thin film sample (CF / Pd / Mg-Sc) prepared without the AAO template. Detailed Implementation

[0041] The present invention will now be described in detail with reference to specific embodiments. These embodiments will help those skilled in the art to further understand the present invention, but do not limit the invention in any way. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention. These all fall within the scope of protection of the present invention.

[0042] In the following specific embodiments, the AAO (Anodic Aluminum Oxide) template used in this invention has a double-pass structure with a thickness of only tens to hundreds of nanometers. It is widely used in the fabrication of nanodot arrays, nanowire arrays, and substrate surface patterning. The AAO template has uniform pore size, short-range ordered pore arrangement, and is transparent in the visible light band, having minimal impact on the wavelength range. It is also relatively stable and will not affect the film composition during sputtering.

[0043] This invention has found that, for hydrogen-chromatic thin films, using an AAO template, without compromising film integrity, helps increase the specific surface area of ​​the film, promotes hydrogen diffusion, and thus accelerates the hydrogen adsorption and desorption rates, significantly improving the hydrogen-induced optical conversion performance of the film. Therefore, the method of constructing novel surface structures for hydrogen-chromatic thin films using an AAO template has high research value.

[0044] Example 1

[0045] This embodiment provides a method for preparing a fluorocarbon / palladium / magnesium-scandium / AAO hydrogen-chromatic thin film (i.e., CF / Pd / Mg-Sc / AAO thin film) by modifying the surface structure of the hydrogen-chromatic thin film through an AAO template to improve its hydrogen response performance, including the following steps:

[0046] (1) Prepare SPM solution with concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 3:1. Place the quartz glass plate in it and heat it in an 80°C water bath for 1 hour to complete the hydrophilic treatment. Then rinse the quartz glass plate with deionized water and dry it with a nitrogen gun to complete the cleaning step.

[0047] (2) Select an AAO template with parameters of 450 nm thickness, 310 nm pore size, and 500 nm pore spacing. Pre-wet with acetone and transfer to a quartz glass slide. Then, clean the surface of the AAO template layer with acetone to remove the PMMA. Repeat the acetone cleaning three times to complete the transfer of the AAO template.

[0048] (3) Place the quartz glass substrate with the AAO template layer into the magnetron sputtering reaction chamber and turn on the vacuum system to evacuate the substrate; heat the substrate to a temperature of 20-25°C, introduce working gas A (argon), and maintain a pressure of 0.4-0.6 Pa. After the pressure stabilizes, turn on the power to the magnesium and scandium targets, turn off the baffles in front of each target, and pre-sputter clean the targets for 10 min. Then set the co-sputtering process program, with sputtering powers of 80 W and 200 W for the magnesium and scandium targets, respectively, adjusting the argon flow rate to 25 sccm, and the co-sputtering time to 60 s. Begin depositing a magnesium-scandium thin film with a thickness of 50 nm to obtain a Mg-Sc / AAO thin film.

[0049] (4) After deposition, with the vacuum level maintained at 0.5 Pa, the sputtering process program of the palladium catalyst layer is loaded, and the sputtering power of the palladium target is adjusted to 80 W and the sputtering time is 14 s. After the palladium film growth is completed, the power supply of all target materials is turned off, and the sample is continued to be purged with working gas A (argon). Then the sample is taken out to obtain a thin film with the composition of Pd / Mg-Sc / AAO.

[0050] (5) The Pd / Mg-Sc / AAO thin film was placed in a reactive ion vapor deposition (RIVDC) machine. The process parameters were set as follows: working gas pressure of 4 Pa, gas B flow rate of 40 sccm, gas excitation power of 600 W, and deposition time of 60 s. Working gas B (C4F8) was introduced, the process program was loaded, and the fluorocarbon film was deposited. After completion, the sample was removed, yielding a thin film with the composition CF / Pd / Mg-Sc / AAO. The structure of the obtained thin film is shown below. Figure 1 As shown, it includes an AAO template layer, a magnesium-scandium composite film layer (Mg-Sc layer), a palladium catalyst layer (Pd layer), and a fluorocarbon film layer (FC layer) sequentially disposed on the substrate.

[0051] A schematic diagram of the transmittance curve of the hydrogen absorption process of the CF / Pd / Mg-Sc / AAO thin film obtained by the test is shown below. Figure 3 As shown, by Figure 3 It can be seen that the hydrogen absorption reaction time of the CF / Pd / Mg-Sc / AAO thin film is approximately 9.2 s.

[0052] Comparative Example 1

[0053] This comparative example provides a method for preparing a fluorocarbon / palladium / magnesium-scandium hydrogen-chromatic thin film (i.e., CF / Pd / Mg-Sc thin film), comprising the following steps:

[0054] (1) Prepare SPM solution with concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 3:1. Place the quartz glass plate in it and heat it in an 80°C water bath for 1 hour to complete the hydrophilic treatment. Then rinse the quartz glass plate with deionized water and dry it with a nitrogen gun to complete the cleaning step.

[0055] (2) Place the cleaned quartz glass substrate into the magnetron sputtering reaction chamber and turn on the vacuum system to evacuate the substrate. Heat the substrate to a temperature of 20-25°C, introduce working gas A (argon), and maintain a pressure of 0.4-0.6 Pa. After the pressure stabilizes, turn on the power to the magnesium and scandium targets, turn off the baffles in front of each target, and pre-sputter clean the targets for 10 minutes. Then set the co-sputtering process program, with sputtering powers of 80W and 200W for the magnesium and scandium targets, respectively. Adjust the argon flow rate to 25 sccm and the co-sputtering time to 60 s. Begin depositing a magnesium-scandium thin film with a thickness of 50 nm to obtain a Mg-Sc thin film.

[0056] (4) After deposition, with the vacuum level maintained at 0.5 Pa, the sputtering process program of the palladium catalyst layer is loaded, and the sputtering power of the palladium target is adjusted to 80 W and the sputtering time is 14 s. After the palladium film growth is completed, the power supply of all target materials is turned off, and the sample is continued to be purged with working gas A (argon). Then the sample is taken out to obtain a thin film with the composition of Pd / Mg-Sc.

[0057] (5) The Pd / Mg-Sc thin film was placed in a reactive ion vapor deposition (REVDC) machine with process parameters of 4 Pa, gas B flow rate of 40 sccm, gas excitation power of 600 W, and deposition time of 60 s. Working gas B (C4F8) was introduced, the process program was loaded, and a fluorocarbon film was deposited. After completion, the sample was removed, and a thin film with the composition CF / Pd / Mg-Sc was obtained. The structure of the obtained thin film includes a magnesium-scandium composite film layer (Mg-Sc layer), a palladium catalyst layer (Pd layer), and a fluorocarbon film layer (FC layer) sequentially disposed on the substrate.

[0058] A schematic diagram of the transmittance curve of the hydrogen absorption process of the obtained CF / Pd / Mg-Sc thin film is shown below. Figure 3 As shown, by Figure 3 It can be seen that the hydrogen absorption reaction time of the CF / Pd / Mg-Sc thin film is approximately 13.9 s. In comparison, the thin film prepared using the AAO template in Example 1 reduced the hydrogen absorption time by 34% compared to the thin film prepared in Comparative Example 1.

[0059] Example 2

[0060] This embodiment provides a method for preparing a fluorocarbon / palladium / magnesium-scandium / AAO hydrogen-chromatic thin film (i.e., CF / Pd / Mg-Sc / AAO thin film) by modifying the surface structure of the hydrogen-chromatic thin film through an AAO template to improve its hydrogen response performance, including the following steps:

[0061] (1) Prepare SPM solution with concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 3:1. Place the quartz glass plate in it and heat it in an 80°C water bath for 1 hour to complete the hydrophilic treatment. Then rinse the quartz glass plate with deionized water and dry it with a nitrogen gun to complete the cleaning step.

[0062] (2) Select an AAO template with parameters of 450 nm thickness, 200 nm pore size, and 300 nm pore spacing. Pre-wet with acetone and transfer to a quartz glass slide. Then, clean the surface of the AAO template layer with acetone to remove PMMA. Repeat the acetone cleaning three times to complete the transfer of the AAO template.

[0063] (3) Place the quartz glass substrate with the AAO template layer into the magnetron sputtering reaction chamber and turn on the vacuum system to evacuate the substrate; heat the substrate to a temperature of 20-25°C, introduce working gas A (argon), and maintain a pressure of 0.4-0.6 Pa. After the pressure stabilizes, turn on the power to the magnesium and scandium targets, turn off the baffles in front of each target, and pre-sputter clean the targets for 10 minutes. Then set the co-sputtering process program, with sputtering powers of 80W and 200W for the magnesium and scandium targets, respectively, adjusting the argon flow rate to 25 sccm and the co-sputtering time to 60 s, and begin depositing a magnesium-scandium thin film with a thickness of 50 nm to obtain a Mg-Sc / AAO thin film.

[0064] (4) After deposition, with the vacuum level maintained at 0.5 Pa, the sputtering process program of the palladium catalyst layer is loaded, and the sputtering power of the palladium target is adjusted to 80 W and the sputtering time is 14 s. After the palladium film growth is completed, the power supply of all target materials is turned off, and the sample is continued to be purged with working gas A (argon). Then the sample is taken out to obtain a thin film with the composition of Pd / Mg-Sc / AAO.

[0065] (5) The Pd / Mg-Sc / AAO thin film was placed in a reactive ion vapor deposition (RIVDC) machine. The process parameters were set as follows: working gas pressure of 4 Pa, gas B flow rate of 40 sccm, gas excitation power of 600 W, and deposition time of 60 s. Working gas B (C4F8) was introduced, the process program was loaded, and the fluorocarbon film was deposited. After completion, the sample was removed, yielding a thin film with the composition CF / Pd / Mg-Sc / AAO. The structure of the obtained thin film is shown below. Figure 1As shown, it includes an AAO template layer, a magnesium-scandium composite film layer (Mg-Sc layer), a palladium catalyst layer (Pd layer), and a fluorocarbon film layer (FC layer) sequentially disposed on the substrate.

[0066] The hydrogen absorption reaction time of the CF / Pd / Mg-Sc / AAO thin film obtained by the test was approximately 11.5 s.

[0067] Example 3

[0068] This embodiment provides a method for preparing a fluorocarbon / palladium / magnesium-yttrium / AAO hydrogen-chromatic thin film (i.e., CF / Pd / Mg-Y / AAO thin film) by modifying the surface structure of the hydrogen-chromatic thin film through an AAO template to improve its hydrogen response performance, including the following steps:

[0069] (1) Prepare SPM solution with concentrated sulfuric acid and hydrogen peroxide in a volume ratio of 3:1. Place the quartz glass plate in it and heat it in an 80°C water bath for 1 hour to complete the hydrophilic treatment. Then rinse the quartz glass plate with deionized water and dry it with a nitrogen gun to complete the cleaning step.

[0070] (2) Select an AAO template with parameters of 450 nm thickness, 200 nm pore size, and 300 nm pore spacing. Pre-wet with acetone and transfer to a quartz glass slide. Then, clean the surface of the AAO template layer with acetone to remove PMMA. Repeat the acetone cleaning three times to complete the transfer of the AAO template.

[0071] (3) Place the quartz glass substrate with the AAO template layer into the magnetron sputtering reaction chamber and turn on the vacuum system to evacuate the substrate; heat the substrate to a temperature of 20-25°C, introduce working gas A (argon), and maintain a pressure of 0.4-0.6 Pa. After the pressure stabilizes, turn on the power to the magnesium and yttrium targets, turn off the baffles in front of each target, and pre-sputter clean the targets for 10 minutes. Then set the co-sputtering process program, with sputtering powers of 80W and 200W for the magnesium and yttrium targets, respectively, adjusting the argon flow rate to 25 sccm and the co-sputtering time to 60 s, and begin depositing a magnesium-scandium thin film with a thickness of 60 nm to obtain a Mg-Y / AAO thin film.

[0072] (4) After deposition, with the vacuum level maintained at 0.5 Pa, the sputtering process program of the palladium catalyst layer is loaded, and the sputtering power of the palladium target is adjusted to 80 W and the sputtering time is 14 s. After the palladium film growth is completed, the power supply of all target materials is turned off, and the sample is continued to be purged with working gas A (argon). Then the sample is taken out to obtain a thin film with the composition of Pd / Mg-Y / AAO.

[0073] (5) The Pd / Mg-Y / AAO thin film was placed in a reactive ion vapor deposition (RIVDC) machine. The process parameters were set as follows: working gas pressure of 4 Pa, gas B flow rate of 40 sccm, gas excitation power of 600 W, and deposition time of 60 s. Working gas B (C4F8) was introduced, the process program was loaded, and the fluorocarbon film was deposited. After completion, the sample was removed, yielding a thin film with the composition CF / Pd / Mg-Y / AAO. The structure of the obtained thin film is shown below. Figure 1 As shown, it includes an AAO template layer, a magnesium-scandium composite film layer (Mg-Y layer), a palladium catalyst layer (Pd layer), and a fluorocarbon film layer (FC layer) sequentially disposed on the substrate.

[0074] The hydrogen absorption reaction time of the CF / Pd / Mg-Sc / AAO thin film obtained by the test was approximately 12.3 s.

[0075] The above description of the embodiments is provided to enable those skilled in the art to understand and use the invention. It will be apparent to those skilled in the art that various modifications can be made to these embodiments, and the general principles described herein can be applied to other embodiments without inventive effort. Therefore, the present invention is not limited to the above embodiments, and any improvements and modifications made by those skilled in the art based on the disclosure of the present invention without departing from the scope of the invention should be within the protection scope of the present invention.

Claims

1. A hydrogen-chromatic thin film with enhanced hydrogen response performance based on an AAO template, characterized in that, The hydrogen-chromatic thin film includes an AAO template layer, a hydrogen-sensitive reaction layer, a catalytic layer, and a protective layer sequentially disposed on a substrate. The thickness of the AAO template layer is 450 nm, the pore size is 310 nm, and the pore spacing is 500 nm. The material of the hydrogen-sensitive reaction layer is selected from any one of magnesium-rare earth, magnesium-transition metal, and magnesium-transition metal oxide. The thickness of the hydrogen-sensitive reaction layer is 10-100 nm; The catalyst layer is made of Pd or a Pd-containing alloy and has a thickness of 3-20 nm. The protective layer is a fluorocarbon film with a thickness of 10-50 nm.

2. A method for preparing a hydrogen-chromatic thin film with enhanced hydrogen response performance based on an AAO template according to claim 1, characterized in that, Includes the following steps: An AAO template is transferred onto a substrate, and a hydrogen-sensitive reaction layer is deposited on the formed AAO template layer using DC magnetron sputtering co-sputtering. A catalytic layer is then deposited on the hydrogen-sensitive reaction layer using DC magnetron sputtering. Finally, a protective layer is deposited on the catalytic layer using chemical deposition to obtain a hydrogen-induced color-changing film with improved hydrogen response performance.

3. The method for preparing a hydrogen-chromatic thin film with enhanced hydrogen response performance based on an AAO template according to claim 2, characterized in that, The method specifically includes the following steps: S1. Prepare SPM solution with concentrated sulfuric acid and hydrogen peroxide, place the substrate in it and heat it in a water bath for hydrophilic treatment, then rinse the substrate with deionized water and blow it dry to obtain the hydrophilic treated substrate. S2. After pre-wetting the AAO template with an organic solvent, transfer it to the hydrophilic substrate, and then clean the surface of the obtained AAO template layer with an organic solvent to complete the transfer of the AAO template. S3. On the substrate with the AAO template layer transferred in step S2, a hydrogen-sensitive reaction layer is deposited on the AAO template layer by DC magnetron sputtering co-sputtering to obtain a porous hydrogen-sensitive reaction layer. S4. A catalyst layer is deposited in situ on the hydrogen-sensitive reaction layer by DC magnetron sputtering, so that it inherits the porous structure formed in S3. S5. A protective layer is deposited on the catalyst layer using chemical vapor deposition, thus obtaining the desired result.

4. The method for preparing a hydrogen-chromatic thin film with enhanced hydrogen response performance based on an AAO template according to claim 3, characterized in that, In step S1, the volume ratio of concentrated sulfuric acid to hydrogen peroxide is 3:1; the water bath heating conditions are: heating at 75-85°C for 50-70 minutes. In step S2, the organic solvent is acetone.

5. The method for preparing a hydrogen-chromatic thin film with enhanced hydrogen response performance based on an AAO template according to claim 3, characterized in that, In step S3, during the deposition of the hydrogen-sensitive reaction layer on the AAO template layer using DC magnetron sputtering co-sputtering, the target material used is a magnesium target and other element targets; the other element targets are selected from any one of rare earth element targets, transition metal targets, and transition metal oxide targets. The sputtering power of the magnesium target used is 30-200 W, and the sputtering power of the other element targets used is 40-300 W, with a total sputtering time of 30-100 s.

6. The method for preparing a hydrogen-chromatic thin film with enhanced hydrogen response performance based on an AAO template according to claim 3, characterized in that, In step S4, during the in-situ deposition of the catalyst layer on the hydrogen-sensitive reaction layer using DC magnetron sputtering, the sputtering power of the target material is 50-100 W and the sputtering time is 10-60 s. In step S5, during the process of depositing a protective layer on the catalyst layer using chemical vapor deposition, the working gas pressure is 4~10 Pa, the working gas flow rate is 40~80 sccm, the gas excitation power is 400~800 W, and the deposition time is 30~100 s.

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