一种波导集成的逻辑门器件单元、光电逻辑门及其加密传输方法
By integrating ridge waveguides and black phosphorus nanosheets on a silicon substrate, and combining optical switches and bias voltages, a multi-waveguide integrated XNOR logic gate was realized, solving the problems of multi-waveguide integration and logic encryption of optoelectronic logic gates, and supporting high-speed, wide-bandwidth secure communication.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HANGZHOU INST FOR ADVANCED STUDY UCAS
- Filing Date
- 2023-09-13
- Publication Date
- 2026-07-17
AI Technical Summary
In the existing technology, optoelectronic logic gates cannot achieve multi-waveguide integration, cannot achieve XNOR logic gates, and lack logic encryption schemes for on-chip integrated optoelectronic logic gates, and cannot be compatible with silicon photonic chips in the communication band.
Using a 220nm SOI substrate, the first and third ridge waveguides are etched and an aluminum oxide layer is deposited on them. Combined with black phosphorus nanosheets (BP) and Au electrodes, photons are switched by optical switches. An encrypted transmission method based on XNOR logic gates is designed, and logic operations are realized by bias voltage and photogenerated carriers.
A logic gate device unit integrating multiple waveguides was implemented, supporting a high-speed, wide-bandwidth, and highly secure confidential communication system, and realizing the encryption and decryption transmission of XNOR logic gates.
Smart Images
Figure CN117215136B_ABST