A piezoelectric semiconductor pyramid-shaped refrigeration device

Abstract

The application discloses a piezoelectric semiconductor pyramid-shaped refrigeration device, and relates to the technical field of refrigeration devices. The piezoelectric semiconductor pyramid-shaped refrigeration device is acted on by a reverse uniform transverse load, and a thermal dipole composed of a heat source and a heat sink is generated in the piezoelectric semiconductor pyramid-shaped refrigeration device based on the Peltier effect and the Joule heat effect of semiconductor materials; the heat source is generated when the Joule heat is positive, and the heat sink is generated when the Joule heat is negative, so that the piezoelectric semiconductor refrigeration is realized; the temperature difference between the uppermost layer and the lowermost layer can be effectively increased through the pyramid-shaped structure, and the piezoelectric semiconductor pyramid-shaped refrigeration device can realize a significant large temperature difference without being limited by materials. The piezoelectric semiconductor pyramid-shaped refrigeration device provided by the application has simple structure, high flexibility, and will not generate noise during the working process.

Description

Technical Field

[0001] The present invention relates to the technical field of piezoelectric semiconductor refrigeration, in particular to a piezoelectric semiconductor pyramid-shaped refrigeration device. Background Art

[0002] Semiconductor refrigeration devices are based on the Peltier effect of semiconductor materials. They use direct current to pass through a PN junction formed by semiconductor materials, releasing heat at one junction and absorbing heat at the other junction, forming a thermal dipole, thereby achieving the purpose of cooling. Compared to ordinary refrigeration devices that require additional heating or cooling elements, the heat absorption / release phenomenon caused by the Peltier effect of semiconductor refrigeration devices is reversible. By changing the direction of the direct current, the heating or cooling effect can be adjusted. Therefore, semiconductor refrigeration devices can meet the needs of heating or cooling simultaneously. Ordinary refrigeration devices also have disadvantages such as high energy consumption, high noise, short service life, and easy pollution to the environment during the cooling process. Compared with ordinary refrigeration devices, the cooling speed and cooling temperature of semiconductor refrigerators can be arbitrarily adjusted by changing the current size. They are highly flexible, have low energy consumption, long service life, and basically no noise is generated during operation, which is not easy to pollute the environment.

[0003] The Chinese invention patent with publication number CN116033817A, entitled "A semiconductor refrigeration device and its preparation process", describes that the current semiconductor refrigeration device includes horizontally alternately distributed p Type semiconductors and n Type semiconductor, located p Type semiconductors and n The cold end ceramic substrate on top of the semiconductor and p Type semiconductors and n The hot end ceramic substrate at the bottom of the semiconductor type has the following defects: complex structure, complex manufacturing process, low reliability and high cost. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a piezoelectric semiconductor pyramid-shaped refrigeration device with a simple structure, a convenient manufacturing process, high reliability and reduced cost.

[0005] The technical solution adopted by the present invention is a piezoelectric semiconductor pyramid-shaped refrigeration device, which performs cooling by applying a reverse uniformly distributed lateral load to the piezoelectric semiconductor pyramid-shaped refrigeration device; the piezoelectric semiconductor pyramid-shaped refrigeration device includes at least three piezoelectric semiconductor layers and at least three DC power supplies connected to each piezoelectric semiconductor layer, the positive pole of the DC power supply is connected to the bottom surface of the piezoelectric semiconductor layer, and the negative pole of the DC power supply is connected to the top surface of the piezoelectric semiconductor layer; the at least three piezoelectric semiconductor layers form a pyramid structure, and an electrically insulating heat-conducting layer is installed between each two adjacent piezoelectric semiconductor layers; the bottom surface of the piezoelectric semiconductor layer located at the bottom of the at least three piezoelectric semiconductor layers is installed with a heat absorption plate; the reverse uniformly distributed lateral load is applied to the top surface of each piezoelectric semiconductor layer, and the value of the reverse uniformly distributed lateral load applied to the top surface of each piezoelectric semiconductor layer is the same.

[0006] The beneficial effects of the present invention are as follows: based on the piezoelectric semiconductor pyramid-shaped refrigeration device provided by the present invention, a reverse uniformly distributed lateral load is applied to the piezoelectric semiconductor pyramid-shaped refrigeration device through which direct current passes, thereby forming a thermal dipole to achieve a refrigeration effect; the cooling speed and refrigeration temperature of the piezoelectric semiconductor pyramid-shaped refrigeration device can be arbitrarily adjusted by changing the current size, with high flexibility and basically no noise during operation; the piezoelectric semiconductor pyramid-shaped refrigeration device is made of the same material and does not need to be used alternately p Type and n The type semiconductor has a simple structure, convenient manufacturing process, high reliability and low cost; the pyramid-shaped piezoelectric semiconductor refrigeration device has excellent cooling effect.

[0007] Preferably, each of the at least three piezoelectric semiconductor layers is composed of a plurality of piezoelectric semiconductor refrigeration plates connected in parallel.

[0008] Preferably, the electrically insulating thermal conductive layer is made of EITC.

[0009] Preferably, the material of each of the at least three piezoelectric semiconductor layers is any one of ZnO, ZnS, CdS, GaAs, GaN, InAs and AlN.

[0010] As preferred, the piezoelectric semiconductor pyramid-shaped refrigeration device comprises three piezoelectric semiconductor layers and three direct current power sources respectively corresponding to each piezoelectric semiconductor layer, the three piezoelectric semiconductor layers comprise a first piezoelectric semiconductor layer, a second piezoelectric semiconductor layer and a third piezoelectric semiconductor layer arranged in sequence from top to bottom, the first piezoelectric semiconductor layer is composed of three piezoelectric semiconductor refrigerating pieces placed vertically and in parallel in parallel connection, the second piezoelectric semiconductor layer is composed of four piezoelectric semiconductor refrigerating pieces placed vertically and in parallel in parallel connection, and the third piezoelectric semiconductor layer is composed of five piezoelectric semiconductor refrigerating pieces placed vertically and in parallel in parallel connection. BRIEF DESCRIPTION OF DRAWINGS

[0011] Figure 1 It is a physical model diagram of the piezoelectric semiconductor pyramid-shaped refrigeration device in the application;

[0012] Figure 2 It is a physical model diagram of the piezoelectric semiconductor refrigerating piece in the application;

[0013] Figure 3 It is a schematic diagram of the rectangular loading area on the upper surface of the piezoelectric semiconductor refrigerating piece in the application;

[0014] Figure 4 It is a schematic diagram of the distribution of heat source and heat sink in the piezoelectric semiconductor refrigerating piece in the application;

[0015] Figure 5 It is a schematic diagram of the relationship between the maximum temperature difference of the piezoelectric semiconductor refrigerating piece in the application and the reverse uniform lateral load; θ

[0016] As shown in the figure: 1, first piezoelectric semiconductor layer; 2, second piezoelectric semiconductor layer; 3, third piezoelectric semiconductor layer; 4, piezoelectric semiconductor refrigerating piece; 5, first direct current power source; 6, second direct current power source; 7, third direct current power source; 8, electrically insulating and heat conducting layer; 9, heat absorbing piece. DETAILED DESCRIPTION

[0017] The application will be further described in the following with reference to the accompanying drawings and in conjunction with the specific embodiments, and the scope of protection of the application is not limited to the specific embodiments.

[0018] ​​Those skilled in the art should understand that in the disclosure of the present application, the orientation or positional relationship indicated by the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore the above terms cannot be understood as a limitation of the present application.

[0019] In addition, the terms "first", "second", "third" and the like are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0020] In the description of the embodiments of the present application, it should also be noted that unless otherwise explicitly specified and limited, the terms "setting", "mounting", "connecting", "connecting" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0021] The present application provides a piezoelectric semiconductor pyramid-shaped refrigeration device, which is cooled by applying a reverse uniform transverse load to the piezoelectric semiconductor pyramid-shaped refrigeration device; the piezoelectric semiconductor pyramid-shaped refrigeration device comprises at least three layers of piezoelectric semiconductor layers and at least three direct current power sources connected to each layer of piezoelectric semiconductor layers respectively, the positive electrode of the direct current power source is connected to the bottom surface of the piezoelectric semiconductor layer, the negative electrode of the direct current power source is connected to the top surface of the piezoelectric semiconductor layer, the at least three layers of piezoelectric semiconductor layers form a pyramid-shaped structure, and an electrically insulating and heat conducting layer 8 is installed between each adjacent two layers of piezoelectric semiconductor layers, a heat absorbing sheet 9 is installed on the bottom surface of the lowermost layer of the at least three layers of piezoelectric semiconductor layers; the reverse uniform transverse load is applied to the top surface of each layer of piezoelectric semiconductor layers respectively, and the values of the reverse uniform transverse load applied to the top surface of each layer of piezoelectric semiconductor layers are the same.

[0022] The uniformly distributed transverse load is divided into a positive uniformly distributed transverse load and a reverse uniformly distributed transverse load. The positive uniformly distributed transverse load is a positive value and its direction is from top to bottom. The reverse uniformly distributed transverse load is a negative value and its direction is from bottom to top. The reverse uniformly distributed transverse load acts on the top surface of each of the three piezoelectric semiconductor layers of the piezoelectric semiconductor pyramid-shaped refrigeration device, and the magnitude of the reverse uniformly distributed transverse load acting on each layer is set to the same value. The piezoelectric semiconductor pyramid-shaped refrigeration device described in the present invention has a reverse uniformly distributed transverse load that acts on each piezoelectric semiconductor layer of the piezoelectric semiconductor pyramid-shaped refrigeration device through which direct current passes, forming a thermal dipole to achieve a refrigeration effect. The cooling speed and cooling temperature of the piezoelectric semiconductor pyramid-shaped refrigeration device can be arbitrarily adjusted by changing the current size, which is highly flexible and basically does not generate noise during operation. As long as the current size in the semiconductor pyramid-shaped refrigeration device changes, the cooling speed and cooling temperature of the semiconductor pyramid-shaped refrigeration device can be adjusted. In addition, the piezoelectric semiconductor pyramid-shaped refrigeration device is made of the same piezoelectric semiconductor material and does not need to be used alternately. p Type and n The type semiconductor has a simple structure, convenient manufacturing process and low cost; the pyramid-shaped piezoelectric semiconductor refrigeration device has excellent cooling effect.

[0023] Furthermore, each of the at least three piezoelectric semiconductor layers is composed of a plurality of piezoelectric semiconductor refrigeration plates 4 connected in parallel.

[0024] Furthermore, the electrically insulating thermally conductive layer 8 is made of EITC. EITC is the abbreviation of Electrically Insulation and Thermally Conductive, and its Chinese meaning is: electrically insulating and thermally conductive material. Common insulating and thermally conductive materials include Al2O3, Si3N4, BeO, BN, etc.

[0025] Furthermore, the material of each of the at least three piezoelectric semiconductor layers is any one of ZnO, ZnS, CdS, GaAs, GaN, InAs and AlN.

[0026] Furthermore, the at least three piezoelectric semiconductor layers are made of the same material.

[0027] like Figure 1As shown, the piezoelectric semiconductor pyramid refrigeration device includes three piezoelectric semiconductor layers and three DC power supplies connected to each piezoelectric semiconductor layer respectively. The three piezoelectric semiconductor layers include a first piezoelectric semiconductor layer 1, a second piezoelectric semiconductor layer 2, and a third piezoelectric semiconductor layer 3 arranged in sequence from top to bottom. The three DC power supplies are a first DC power supply 5 connected to the first piezoelectric semiconductor layer 1, a second DC power supply 6 connected to the second piezoelectric semiconductor layer 2, and a third DC power supply 7 connected to the third piezoelectric semiconductor layer 3; the positive electrode of the first DC power supply 5 is connected to the bottom surface of the first piezoelectric semiconductor layer 1, and the negative electrode of the first DC power supply 5 is connected to the first piezoelectric semiconductor layer 1. The top surface of the piezoelectric semiconductor layer 1 is connected, the positive pole of the second DC power supply 6 is connected to the bottom surface of the second piezoelectric semiconductor layer 2, the negative pole of the second DC power supply 6 is connected to the top surface of the second piezoelectric semiconductor layer 2, the positive pole of the third DC power supply 7 is connected to the bottom surface of the third piezoelectric semiconductor layer 3, and the negative pole of the third DC power supply 7 is connected to the top surface of the third piezoelectric semiconductor layer 3; the three piezoelectric semiconductor layers constitute a pyramid structure, and an electrically insulating thermal conductive layer 8 is installed between the first piezoelectric semiconductor layer 1 and the second piezoelectric semiconductor layer 2 and between the second piezoelectric semiconductor layer 2 and the third piezoelectric semiconductor layer 3, and a heat absorption plate 9 is installed on the bottom surface of the third piezoelectric semiconductor layer 3.

[0028] like Figure 1 As shown, the first piezoelectric semiconductor layer 1 and the second piezoelectric semiconductor layer 2 are thermally connected in series, i.e., they are thermally conductive but not electrically conductive; the second piezoelectric semiconductor layer 2 and the third piezoelectric semiconductor layer 3 are thermally connected in series, i.e., they are thermally conductive but not electrically conductive.

[0029] like Figure 1 As shown, the first piezoelectric semiconductor layer 1 is composed of three piezoelectric semiconductor refrigeration plates 4 placed vertically in parallel and connected in parallel, the second piezoelectric semiconductor layer 2 is composed of four piezoelectric semiconductor refrigeration plates 4 placed vertically in parallel and connected in parallel, and the third piezoelectric semiconductor layer 3 is composed of five piezoelectric semiconductor refrigeration plates 4 placed vertically in parallel and connected in parallel; the parallel connection between the piezoelectric semiconductor refrigeration plates 4 is electrical parallel.

[0030] like Figure 1 As shown, the material of the electrically insulating thermal conductive layer 8 installed between the first piezoelectric semiconductor layer 1 and the second piezoelectric semiconductor layer 2 is EITC, and the material of the electrically insulating thermal conductive layer 8 installed between the second piezoelectric semiconductor layer 2 and the third piezoelectric semiconductor layer 3 is EITC.

[0031] like Figure 1 As shown, the materials of the first piezoelectric semiconductor layer 1 , the second piezoelectric semiconductor layer 2 and the third piezoelectric semiconductor layer 3 are all ZnO.

[0032] like Figure 1A piezoelectric semiconductor pyramid-shaped cooling device is shown, in which reverse uniformly distributed lateral loads are applied to the top surfaces of the first piezoelectric semiconductor layer 1, the second piezoelectric semiconductor layer 2, and the third piezoelectric semiconductor layer 3. Based on the Peltier effect of the semiconductor material, the heat absorbed and released is proportional to the current intensity, and the reverse uniformly distributed lateral load can act as a current amplifier through the induced potential barrier. The current and electric field in the loaded area are greatly increased, further amplifying the temperature difference at both ends of the piezoelectric semiconductor pyramid-shaped cooling device; based on the Joule heating effect, a thermal dipole consisting of a heat source and a heat sink is generated in the piezoelectric semiconductor pyramid-shaped cooling device. When the Joule heat is positive, a heat source is generated, and when the Joule heat is negative, a heat sink is generated. This shows that the uniformly distributed lateral load can cause the piezoelectric semiconductor pyramid-shaped cooling device to cool.

[0033] Based on the piezoelectric semiconductor pyramid-shaped refrigeration device proposed in the present invention, the refrigeration principle of the piezoelectric semiconductor pyramid-shaped refrigeration device proposed in the present invention is explained below through a specific theoretical model.

[0034] Taking a single piezoelectric semiconductor refrigeration plate 4 as an example, a theoretical model of the piezoelectric semiconductor refrigeration plate 4 is established based on the Mindlin plate theory and the thermoelectric semiconductor plate theory, and the refrigeration principle of the piezoelectric semiconductor pyramid refrigeration device is analyzed.

[0035] Establish as attached Figure 2 The physical model of the piezoelectric semiconductor refrigeration plate 4 is shown, and a o-x 1 x 2 x 3 space coordinate system, piezoelectric semiconductor refrigeration piece 4 along x 1-axis length is a , piezoelectric semiconductor refrigeration piece 4 along x The length in the 2-axis direction is b , x The 3rd axis is in the thickness direction of the piezoelectric semiconductor refrigeration piece 4, and x 1 axis, x 2-axis and x The three axes form a right-handed coordinate system, and the piezoelectric layer is along x 3-axis polarization, the thickness of the piezoelectric semiconductor refrigeration plate 4 is 2 h .

[0036] The steps for establishing the theoretical model of the piezoelectric semiconductor refrigeration piece 4 are as follows:

[0037] S1. Establish the two-dimensional field equations of the piezoelectric semiconductor refrigeration plate 4, including the equation of motion, electrostatic equation, continuity equation of free carriers and heat conduction equation:

[0038] ;

[0039] in, the resultant vector of stress, i and j the value range of superscript n is 0, 1 or 2, , and the resultant vector of surface force, the resultant vector of electric displacement, q the elementary charge, n the concentration disturbance of electron, the resultant vector of heat flux, the electrochemical potential of electron, the resultant vector of current density, subscript i " indicates that the variable is related to x i partial derivative in the axial direction, i.e. , and satisfies:

[0040] ;

[0041] wherein, T ij represents stress, D i represents electric displacement, represents current density, represents heat flux, t i represents surface force;

[0042] S2, a two-dimensional constitutive relationship of piezoelectric semiconductor refrigeration sheet 4 is established:

[0043] ;

[0044] wherein, is used to describe bending deformation, and is used to describe shear deformation, represents the component of electric potential, c pq represents elastic constant, p and q the value range of superscript and represents equivalent elastic constant, and has and , κ represents shear correction factor, and has , ε 11 represents dielectric constant, d 15 represents piezoelectric constant, represents the mobility of electrons, represents the diffusion constant of electrons, represents the Seebeck coefficient of electrons, represents the doping concentration of donors, represents the Peltier coefficient of electrons, represents the thermal conductivity, Δ ϑ represents the temperature change, wherein ϑ represents the absolute temperature, ϑ R represents the reference temperature, and the temperature change is Δ ϑ =ϑ - ϑ R ;

[0045] S3, the two-dimensional constitutive relation of the piezoelectric semiconductor refrigeration piece 4 is substituted into the two-dimensional field equation of the piezoelectric semiconductor refrigeration piece 4, and the two-dimensional control equation of the piezoelectric semiconductor refrigeration piece 4 can be obtained.

[0046] The piezoelectric semiconductor refrigeration piece 4 shown in the figure adopts Figure 2 a semiconductor of the type, and the piezoelectric semiconductor refrigeration piece 4 is simply supported at four edges, and n 1= 0, the voltage is 0 at x 1= 0, the voltage is a at x 1= 0, and it is assumed that 1= 0 and x at a are ohmic contacts. At the same time, x 2= 0 and b are electrically open, it is assumed that the temperature change is 0 at x 1= 0 and a , the heat flux density is 0 at x 1= 0 and a , the boundary conditions of the piezoelectric semiconductor refrigeration piece 4 are:

[0047] ;

[0048] wherein, is the voltage given on the boundary.

[0049] Based on the theoretical model of the piezoelectric semiconductor refrigeration piece 4 established above, since there are nonlinear terms in the two-dimensional control equation of the piezoelectric semiconductor refrigeration piece 4, it is difficult to obtain an analytical expression of the result, therefore, the finite element model corresponding to the control equation is established by using the multi-physical field coupling simulation software COMSOL Multiphysics, and numerical calculation is performed, so as to prove the effectiveness of the piezoelectric semiconductor pyramid-shaped refrigeration device.

[0050] Under the action of static uniform lateral load, the geometric size of the physical model is: h = 10 nm,a = 150nm, b =100 nm, the piezoelectric semiconductor material is ZnO, and the material parameters are: c 11 = 209.7×10 9 N / m 2 , c 12 = 121.1×10 9 N / m 2 , c 13 = 105.1×10 9 N / m 2 , c 33 = 210.9×10 9 N / m 2 , c 44 = 42.47 × 10 9 N / m 2 , c 66 = 44.3×10 9 N / m 2 , ε 11 = 7.57 × 10 -11 C / (m·V), d 15 = -0.48 C / m 2 , = 200 × 10 -4 m 2 / (V·s), =5.177×10 -4 m 2 / s, = 3.6 × 10 -6 m 2 / (K·s), = 15 W / (m·K), = 1.80 × 10 -4 V / K, the doping concentration of the donor is: = 10 21 m −3 ;

[0051] As attached Figure 3 As shown, a uniformly distributed lateral load is applied to the rectangular loading area on the upper surface of the piezoelectric semiconductor refrigeration plate 4. ( ),and:

[0052] ;

[0053] The rectangular loading area is As the center, the side length of the rectangular loading area is a 0 = b 0 = 30 nm, is a given uniformly distributed lateral load;

[0054] The equations related to heat conduction in the control equations are:

[0055] ;

[0056] The second and third terms on the left side of the above equation represent the body heat sources generated by the Peltier effect and Joule heating effect, respectively. The Peltier effect here can only generate heat flow, not heat source. Therefore, the total heat source only includes the Joule heating effect, that is:

[0057]

[0058] in, , and there is:

[0059] ;

[0060] Among them, the first term on the right side of the above formula is always positive, but the second term on the right side of the above formula can be negative. Therefore, when the temperature gradient and the electrochemical potential gradient are at an obtuse angle and an appropriate value is selected, Can be negative. Figure 4 As shown, when When it is positive, heat source is generated (attached Figure 4 On the left), on the contrary, when When the value is negative, a heat sink is generated (with Figure 4 on the right).

[0061] As attached Figure 5 Shown is the maximum temperature difference of the piezoelectric semiconductor refrigeration piece 4 θ and reverse uniformly distributed lateral load With the reverse uniformly distributed lateral load The increase in maximum temperature difference θ Also increases accordingly, at points P1, P2, P3 and P4, the maximum temperature difference θ They are 0.019 K, 0.028 K, 0.038 K and 0.048 K respectively. Figure 5 The strain level at the right end of the curve is about 1%, and the maximum temperature difference θ reaches 0.06 K.

[0062] The three piezoelectric semiconductor refrigerating sheets 4 of the first piezoelectric semiconductor layer 1, the four piezoelectric semiconductor refrigerating sheets 4 of the second piezoelectric semiconductor layer 2 and the five piezoelectric semiconductor refrigerating sheets 4 of the third piezoelectric semiconductor layer 3 are consistent with the refrigeration principle of the piezoelectric semiconductor refrigerating sheet 4 described above. Based on the refrigeration principle, the heat at the bottom of the first piezoelectric semiconductor layer 1 flows into the second piezoelectric semiconductor layer 2, the heat at the bottom of the second piezoelectric semiconductor layer 2 flows into the third piezoelectric semiconductor layer 3, and the heat always flows from the upper layer to the lower layer. The pyramid structure can effectively increase the temperature difference between the uppermost layer and the lowermost layer by increasing the number of layers, and the piezoelectric semiconductor refrigerating sheets 4 are all selected from the PZT type semiconductor, without alternating use of the PZN-PT type and the PMN-PT type semiconductors. n p n Therefore, the piezoelectric semiconductor pyramid refrigeration device can achieve a significant temperature difference without being limited by materials.​​

Claims

1. A piezoelectric semiconductor pyramid-shaped refrigeration device, characterized in that: Refrigeration is performed by applying a reverse uniformly distributed transverse load to the piezoelectric semiconductor pyramid-shaped refrigeration device; the piezoelectric semiconductor pyramid-shaped refrigeration device comprises at least three piezoelectric semiconductor layers and at least three DC power supplies respectively connected to each piezoelectric semiconductor layer, the positive pole of the DC power supply is connected to the bottom surface of the piezoelectric semiconductor layer, and the negative pole of the DC power supply is connected to the top surface of the piezoelectric semiconductor layer; the at least three piezoelectric semiconductor layers form a pyramid structure, and an electrically insulating heat-conducting layer (8) is installed between each two adjacent piezoelectric semiconductor layers, and a heat-absorbing plate (9) is installed on the bottom surface of the piezoelectric semiconductor layer located at the bottom of the at least three piezoelectric semiconductor layers; the reverse uniformly distributed transverse load is respectively applied to the top surface of each piezoelectric semiconductor layer, and the value of the reverse uniformly distributed transverse load applied to the top surface of each piezoelectric semiconductor layer is the same; Each of the at least three piezoelectric semiconductor layers is composed of a plurality of piezoelectric semiconductor refrigeration plates (4) connected in parallel; the piezoelectric semiconductor pyramid refrigeration device comprises three piezoelectric semiconductor layers and three DC power supplies respectively connected to each piezoelectric semiconductor layer; the three piezoelectric semiconductor layers comprise a first piezoelectric semiconductor layer (1), a second piezoelectric semiconductor layer (2) and a third piezoelectric semiconductor layer (3) arranged in sequence from top to bottom; the first piezoelectric semiconductor layer (1) is composed of three piezoelectric semiconductor refrigeration plates (4) placed vertically in parallel and connected in parallel; the second piezoelectric semiconductor layer (2) is composed of four piezoelectric semiconductor refrigeration plates (4) placed vertically in parallel and connected in parallel; and the third piezoelectric semiconductor layer (3) is composed of five piezoelectric semiconductor refrigeration plates (4) placed vertically in parallel and connected in parallel.

2. The piezoelectric semiconductor pyramid-shaped refrigeration device according to claim 1, characterized in that: The material of the electrically insulating thermally conductive layer (8) is EITC.

3. The piezoelectric semiconductor pyramid-shaped refrigeration device according to claim 2, characterized in that: The material of each of the at least three piezoelectric semiconductor layers is any one of ZnO, ZnS, CdS, GaAs, GaN, InAs and AlN.

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