Solid-state imaging device and camera device

Abstract

A solid-state imaging device is provided with a plurality of first pixels and a plurality of second pixels different from the plurality of first pixels, each of the plurality of first pixels and the plurality of second pixels is provided with one or more photoelectric conversion elements that constitute a light-receiving surface of the pixel and generate electric charges by photoelectrically converting received light, a floating diffusion region that is connected to the one or more photoelectric conversion elements and converts the electric charges into a voltage corresponding to an amount of the electric charges, and a holding capacitor that is connected to the floating diffusion region and can accumulate the electric charges overflowing from the one or more photoelectric conversion elements, each of the plurality of first pixels is configured to have two or more photoelectric conversion elements, the two or more photoelectric conversion elements are all connected to the floating diffusion region, and a phase difference data signal can be generated by comparing the electric charges accumulated in the two or more photoelectric conversion elements, respectively, two or more second pixels among the plurality of second pixels together constitute a second pixel group, and the second pixel group is configured to generate a phase difference data signal by comparing the electric charges accumulated in each of the second pixels constituting the second pixel group, respectively.

Description

TECHNICAL FIELD

[0001] The present application relates to a solid-state imaging device, and a camera head apparatus equipped with the same. BACKGROUND

[0002] In recent years, in a camera head apparatus such as a digital camera, as a technique for realizing an input dynamic range in which a maintainable accumulation capacity exceeds an allowable range in a photodiode (photoelectric conversion element) provided in a pixel, a High Dynamic Range Imaging (HDR Imaging) technique is known. For example, in Patent Literature 1, an "overflow charge accumulation capacity type" HDR Imaging technique is disclosed, in which by accumulating charges overflowing from a photodiode into an additional holding capacity provided in a pixel, it is possible to maintain charges far exceeding an upper limit of an accumulation capacity that can be maintained in a photodiode in the pixel.

[0003] In addition, in recent camera head apparatuses, there is an increasing demand for high-speed and high-precision autofocus. As a technique for such autofocus, particularly in relatively small camera head apparatuses such as mirrorless cameras or smartphones, a shooting plane phase difference autofocus technique is often adopted. In this shooting plane phase difference autofocus, the light receiving surface of a pixel under one microlens is divided into two parts, and signals from an object through different light paths are read out respectively, and by processing the spatial phase difference of the object image, the amount of defocus is calculated. In this way, in the shooting plane phase difference autofocus, since the amount of defocus can be calculated by one phase operation, compared to the contrast detection type autofocus conventionally adopted, it has the advantage that high-speed autofocus can be performed.

[0004] Comparing the two shooting plane phase difference autofocus methods, in the two-pixel method, all pixels contribute to the creation of phase difference information and the output of image signals, while in the occlusion method, only the occluded pixels contribute to the creation of phase difference information, and only the non-occluded pixels contribute to the output of image signals. Therefore, typically, compared to the occlusion method, the two-pixel method is particularly high in autofocus precision and superior in photographic image SN ratio when shooting a low-luminance object.

[0005] On the other hand, in the two-pixel method, when shooting a high-luminance object, in one of the two photodiodes provided in one pixel, charges exceeding the upper limit of the maintainable capacity are generated, and the charges overflowing from this photodiode sometimes flow into the other photodiode. In such a pixel where overflow occurs, the two photodiodes no longer provide correct phase difference information, and can be a major cause of reducing autofocus precision.

[0006] An attempt has also been made to apply this dual-pixel phase-difference autofocusing technology to a pixel that adopts the overflow charge accumulation capacitor type HDR imaging technology as in Patent Literature 1.

[0007] As an example of such an attempt, first consider a dual-pixel approach in which two photodiodes are disposed in one pixel, and an approach in which an additional holding capacity corresponding to each photodiode is disposed for each photodiode. However, if multiple additional holding capacities are thus disposed within the pixel, the size of the pixel becomes large, and it is difficult to adopt in a relatively small camera device such as the above-described mirrorless camera, smartphone, and the like, and thus is not realistic.

[0008] As an approach to combining these technologies while suppressing the large size of the pixel, Patent Literature 2 discloses a pixel in which an overflow holding capacitor that can hold the overflow charge from two photodiodes (photoelectric conversion sections) is commonly provided between the two photodiodes. In this pixel, the potential barrier between the two photodiodes is set to be relatively large, and thus is designed so that the charge overflowing from one photodiode preferentially flows into the overflow holding capacitor rather than the other photodiode. The charge thus flowing into the overflow holding capacitor and being held is added to the one of the two photodiodes that holds a larger amount of charge when a phase difference signal is generated. Thus, in the pixel of Patent Literature 2, even in a case where the charge overflows from one of the two photodiodes within the pixel, correct phase difference information can be provided. Therefore, according to the pixel of Patent Literature 2, a high dynamic range can be achieved, and autofocusing can be performed with sufficiently high precision even for a certain degree of high-luminance subject.

[0009] However, in the pixel of Patent Literature 2, although the case where only one of the two photodiodes overflows can be dealt with, when a high-luminance object is imaged so that both of the two photodiodes overflow, the charge flows from both of the two photodiodes into one overflow holding capacitor. Therefore, there is a problem that the phase information of the charge held in the overflow holding capacitor is lost, and as a result, correct phase difference information cannot be provided.

[0010] Prior Art Documents

[0011] Patent Literature

[0012] Patent Literature 1: U.S. Patent Application Publication No. 2017 / 0099423

[0013] Patent Literature 2: Japanese Patent Application Publication No. 2020-57894. SUMMARY

[0014] PROBLEMS TO BE SOLVED BY THE INVENTION

[0015] Thus, the present application solves the problem of being able to provide a solid-state imaging device that provides high-precision phase difference information for a higher-luminance subject while achieving a high dynamic range, and a camera head device equipped with the solid-state imaging device.

[0016] Solution to the problem

[0017] In the solid-state imaging device of the present application,

[0018] The solid-state imaging device is equipped with a plurality of first pixels and a plurality of second pixels different from the plurality of first pixels,

[0019] Each of the plurality of first pixels and the plurality of second pixels is equipped with:

[0020] one or more photoelectric conversion elements that constitute a light-receiving surface of the pixel and generate electric charges by photoelectrically converting received light;

[0021] a floating diffusion region that is connected to the one or more photoelectric conversion elements and converts the electric charges into a voltage corresponding to the amount of the electric charges; and

[0022] a holding capacitor that is connected to the floating diffusion region and is capable of accumulating the electric charges overflowing from the one or more photoelectric conversion elements,

[0023] Each of the plurality of first pixels is configured to be equipped with two or more photoelectric conversion elements, the two or more photoelectric conversion elements are all connected to the floating diffusion region, and a phase difference data signal is capable of being generated by comparing the electric charges accumulated in the two or more photoelectric conversion elements, respectively,

[0024] two or more second pixels among the plurality of second pixels together constitute a second pixel group,

[0025] The second pixel group is configured to be capable of generating a phase difference data signal by comparing the electric charges accumulated in each of the second pixels constituting the second pixel group, respectively.

[0026] In the solid-state imaging device, for example, in each of the two or more pixels constituting the second pixel group, a part of the light-receiving surface of the pixel is shielded to hinder the reception of light at the part of the light-receiving surface.

[0027] Alternatively, in the solid-state imaging device, an independent on-chip lens (OCL) is provided in each of the plurality of first pixels,

[0028] In each of the second pixel groups, an independent on-chip lens (OCL) is provided, and the two or more pixels constituting the second pixel group share the one on-chip lens (OCL).

[0029] In the above-described solid-state imaging device, in each of the plurality of first pixels,

[0030] The potential barrier between the two or more photoelectric conversion elements can be lower than the potential barrier between the photoelectric conversion element and the holding capacitor.

[0031] In this case, preferably, in each of the plurality of second pixels,

[0032] In a case where the total number of charges accumulated in the one or more photoelectric conversion elements is equal to or less than a predetermined saturation charge amount, a phase difference data signal is generated on the basis of the total number of charges accumulated in the one or more photoelectric conversion elements,

[0033] In a case where the total number of charges accumulated in the one or more photoelectric conversion elements is greater than a predetermined saturation charge amount, a phase difference data signal is generated on the basis of the total number of charges accumulated in the one or more photoelectric conversion elements and the charge accumulated in the holding capacitor.

[0034] Alternatively, in the above-described solid-state imaging device, in each of the plurality of first pixels,

[0035] The potential barrier between the two or more photoelectric conversion elements can be higher than the potential barrier between the photoelectric conversion element and the holding capacitor.

[0036] In this case, preferably, in each of the plurality of second pixels,

[0037] In a case where the total number of charges accumulated in the one or more photoelectric conversion elements is equal to or less than a predetermined saturation charge amount, a phase difference data signal is generated on the basis of the total number of charges accumulated in the one or more photoelectric conversion elements,

[0038] In a case where the total number of charges accumulated in the one or more photoelectric conversion elements is greater than a predetermined saturation charge amount, a phase difference data signal is generated on the basis of the total number of charges accumulated in the one or more photoelectric conversion elements and the charge accumulated in the holding capacitor.

[0039] Further, the above-described solid-state imaging device, for each of the plurality of first pixels,

[0040] It is also possible to judge whether the electric charges held in each of the two or more photoelectric conversion elements reach a threshold value indicating generation of overflow in the photoelectric conversion element, and in a case where none of the two or more photoelectric conversion elements reaches the threshold value, output a phase difference data signal generated on the basis of the electric charges generated in the two or more photoelectric conversion elements in the first pixel, and in a case where at least one reaches the threshold value, output a phase difference data signal generated on the basis of the electric charges generated in the second pixel group determined by the solid-state imaging device.

[0041] The camera device of the present application,

[0042] The camera device of the present application,

[0043] The camera device of the present application,

[0044] The camera device of the present application, BRIEF DESCRIPTION OF DRAWINGS

[0045] Figure 1 is a view showing the configuration of the solid-state imaging device of the first embodiment.

[0046] Figure 2 is a view showing an arrangement example of pixels arranged in the pixel array unit, and shows a plurality of specific examples of the second pixel in the one view.

[0047] Figure 3 is a cross-sectional view showing the structure of the first pixel.

[0048] Figure 4 is a cross-sectional view showing the structure of the second pixel.

[0049] Figure 5 is an equivalent circuit diagram of the pixel included in the solid-state imaging device.

[0050] Figure 6 is a view showing the potential barrier of the photoelectric conversion element and the holding capacitor in each pixel of the first embodiment.

[0051] Figure 7 is a timing chart of the pixel.

[0052] Figure 8 is a flowchart showing a first output example of the phase difference data signal.

[0053] Figure 9 is a flowchart showing a second output example of a phase difference data signal.

[0054] Figure 10 is a flowchart showing a third output example of a phase difference data signal.

[0055] Figure 11 is a flowchart showing Step 1002 of the third output example in the first embodiment in detail.

[0056] Figure 12 is a diagram showing a potential barrier of a photoelectric conversion element and a holding capacitor in each pixel of the second embodiment.

[0057] Figure 13 is a flowchart showing Step 1002 of the third output example in the second embodiment in detail.

[0058] Figure 14 is a diagram showing a configuration of a solid-state imaging device of another embodiment.

[0059] Figure 15 is a cross-sectional view showing a structure of a solid-state imaging device of another embodiment. DETAILED DESCRIPTION

[0060] The solid-state imaging device of the present application includes:

[0061] a plurality of first pixels and a plurality of second pixels different from the plurality of first pixels,

[0062] each of the plurality of first pixels and the plurality of second pixels includes:

[0063] one or more photoelectric conversion elements that constitute a light-receiving surface of the pixel and generate electric charges by photoelectrically converting received light;

[0064] a floating diffusion region that is connected to the one or more photoelectric conversion elements and converts the electric charges into a voltage corresponding to an amount of the electric charges;

[0065] an overflow holding capacitor that is connected to the floating diffusion region and is capable of accumulating the electric charges overflowing from the one or more photoelectric conversion elements,

[0066] each of the plurality of first pixels is configured to include two or more photoelectric conversion elements, the two or more photoelectric conversion elements are all connected to the floating diffusion region, and a phase difference data signal is capable of being generated by comparing the electric charges accumulated in the two or more photoelectric conversion elements,

[0067] two or more second pixels among the plurality of second pixels together constitute a second pixel group,

[0068] The second pixel group is configured to generate a phase difference data signal by comparing the charges accumulated in each of the second pixels that make up the second pixel group.

[0069] According to this configuration, by appropriately using both the method based on the charges generated in the plurality of photoelectric conversion elements of the first pixel provided in the solid-state imaging device and the method based on the charges generated in the second pixel group provided in the solid-state imaging device, a high-precision phase difference data signal can be generated regardless of whether the subject is a high-luminance subject or a low-luminance subject.

[0070] For example, in a case where the subject is high-luminance and the charge exceeds the charge storage capacity that can be held by the photoelectric conversion element included in the pixel, in the method based on the charges generated in the plurality of photoelectric conversion elements, as in the above-described dual-pixel method, since the charge overflows from the photoelectric conversion element, an accurate phase difference data signal can not be generated. On the other hand, in the method in which the charges generated in the plurality of pixels of the second pixel group are compared, if the charge generated in each of the plurality of pixels is below the total amount that can be accumulated by the photoelectric conversion element and the additional holding capacity, by comparing the charges held in each of the plurality of pixels of the second pixel group, an accurate phase difference data signal can be provided.

[0071] In addition, since the charge that overflows from the photoelectric conversion element is held in the additional holding capacity, by reading out these charges, a high-dynamic-range photographic image can be generated.

[0072] Alternatively, if the subject is low-luminance and the charge generated in the photoelectric conversion element included in the pixel does not exceed the charge storage capacity that can be held, and no charge overflow occurs, a higher-precision phase difference data signal based on the phase difference data signal generated in all of the photoelectric conversion elements in the first pixel and based on the dual (or, triple, quadruple, etc.) pixel method can be provided.

[0073] In the above-described solid-state imaging device, for example, in each of the above-described two or more pixels that make up the above-described second pixel group, a portion of the above-described light-receiving surface of the pixel is shielded to prevent light from being received at the portion of the light-receiving surface.

[0074] Alternatively, in the above-described solid-state imaging device, an independent on-chip lens (OCL) is provided in each of the above-described plurality of first pixels,

[0075] In the above-described second pixel group, an independent on-chip lens (OCL) is provided in each of the second pixel group, and the above-described two or more pixels that make up the above-described second pixel group share the above-described one on-chip lens (OCL).

[0076] In the above-described solid-state imaging device, in each of the plurality of first pixels,

[0077] The potential barrier between the two or more photoelectric conversion elements can be lower than the potential barrier between the photoelectric conversion element and the holding capacitor.

[0078] According to this configuration, in a case where an amount of charge exceeding the charge storage capacity that can be held is generated in one of the two or more photoelectric conversion elements included in the first pixel, the charge overflowing from the photoelectric conversion element does not flow into the additional holding capacitor, but preferentially flows into the other photoelectric conversion elements included in the pixel. Typically, since the noise of the charge held by the photoelectric conversion element is often smaller than the noise of the charge held by the additional holding capacitor, it is possible to make the SN ratio of the obtained photographic image higher.

[0079] In this case, preferably, in each of the plurality of second pixels,

[0080] In a case where the total amount of charge accumulated in the one or more photoelectric conversion elements is equal to or less than the predetermined saturation charge amount, the phase difference data signal is generated on the basis of the total amount of charge accumulated in the one or more photoelectric conversion elements,

[0081] In a case where the total amount of charge accumulated in the one or more photoelectric conversion elements is greater than the predetermined saturation charge amount, the phase difference data signal is generated on the basis of the total amount of charge accumulated in the one or more photoelectric conversion elements and the charge accumulated in the holding capacitor.

[0082] According to this configuration, in a case where the total amount of charge accumulated in the photoelectric conversion element of the second pixel is equal to or less than the predetermined saturation charge amount (for example, in a case where it is assumed that the charge overflowing from the photoelectric conversion element does not flow into the additional holding capacitor), since the phase difference data signal is generated without taking the additional holding capacitor into consideration, it is possible to generate a phase difference data signal with higher precision without being affected by the noise caused by the holding capacitor.

[0083] Alternatively, in the above-described solid-state imaging device, in each of the plurality of first pixels,

[0084] The potential barrier between the two or more photoelectric conversion elements can be higher than the potential barrier between the photoelectric conversion element and the holding capacitor.

[0085] According to this configuration, in a case where the electric charge exceeding the electric charge capacity that can be held is generated in one of the two or more photoelectric conversion elements included in the first pixel, the electric charge overflowing from the photoelectric conversion element preferentially flows into the additional holding capacitor. In this case, even if the electric charge overflow occurs in the photoelectric conversion element of the pixel, as long as there is one overflowing photoelectric conversion element, the electric charge held by the additional holding capacitor can be regarded as the electric charge generated by the overflowing photoelectric conversion element. Therefore, even for a subject of relatively high brightness, a phase difference data signal with high reliability can be generated by the first pixel described above.

[0086] In this case, preferably, in each of the plurality of second pixels described above,

[0087] In a case where the electric charge accumulated in the one or more photoelectric conversion elements is all below a predetermined saturation electric charge amount, a phase difference data signal is generated based on the total of the electric charges accumulated in the one or more photoelectric conversion elements,

[0088] In a case where the electric charge accumulated in any one of the one or more photoelectric conversion elements is greater than the predetermined saturation electric charge amount, a phase difference data signal is generated based on the total of the electric charge accumulated in the one or more photoelectric conversion elements and the electric charge accumulated in the holding capacitor.

[0089] According to this configuration, in a case where the electric charge accumulated in the photoelectric conversion element of the second pixel is all below a predetermined saturation electric charge amount (for example, in a case where it is assumed that the electric charge overflowing from the photoelectric conversion element does not flow into the additional holding capacitor), since the phase difference data signal is generated without taking the additional holding capacitor into account, a phase difference data signal with higher precision can be generated without being affected by noise caused by the holding capacitor.

[0090] In addition, the solid-state imaging device described above can be such that, for each of the plurality of first pixels described above,

[0091] whether the electric charge held by each of the two or more photoelectric conversion elements reaches a threshold value indicating that overflow occurs in the photoelectric conversion element, in a case where none of the threshold values is reached, in the first pixel, a phase difference data signal generated based on the electric charge generated in the two or more photoelectric conversion elements is output, and in a case where at least one of the threshold values is reached, a phase difference data signal generated based on the electric charge generated in the second pixel group determined by the solid-state imaging device is output.

[0092] According to this configuration, for each first pixel, the solid-state imaging device can appropriately determine which of the two phase difference data signal generation methods described above to use by judging whether the phase difference information is maintained without being destroyed (e.g., whether the charge generated in a certain photoelectric conversion element has overflowed and not flowed into another photoelectric conversion element), and can output more accurate phase difference data signals.

[0093] Further, in this case, in a case where it is determined that the phase difference information is destroyed in a certain first pixel and accurate phase difference data signals cannot be generated by comparing the charges generated in the plurality of photoelectric conversion elements of the first pixel, the solid-state imaging device, for example, selects the charge information of a nearby second pixel from the charge information of the plurality of pixels currently read into the line memory, and regards the phase difference data signal generated based on the charge information of the nearby second pixel as the phase difference data signal generated by the first pixel.

[0094] The camera device of the present application,

[0095] The camera device includes the solid-state imaging device described above, and a control device configured to control the solid-state imaging device.

[0096] According to this configuration, the camera device described above can generate highly accurate phase difference data signals for both high-luminance subjects and low-luminance subjects by appropriately using both the method of comparing the charges generated in the two or more photoelectric conversion elements included in the first pixel included in the solid-state imaging device and the method of comparing the charges generated in the second pixel groups included in the solid-state imaging device.

[0097] The camera device described above is configured to determine, for example, based on a signal from the control device described above, whether the solid-state imaging device outputs phase difference data signals for each pixel based on the charges generated in the two or more photoelectric conversion elements included in the first pixel and / or whether the solid-state imaging device outputs phase difference data signals for each pixel based on the charges generated in the two or more second pixel groups.

[0098] According to this configuration, in the solid-state imaging device, it is possible to control, from the outside of the solid-state imaging device, whether to use the method of comparing the charges generated in the two or more photoelectric conversion elements of the first pixel or the method of comparing the charges generated in the second pixel groups (or, simultaneously use both methods) to output phase difference data signals by the control device of the camera device described above.

[0099] The camera device described above can be, for example, a mobile terminal such as a smartphone, a mobile phone, a tablet, a mobile information terminal (PDA), or the like.

[0100] <First Embodiment>

[0101] Hereinafter, a first embodiment of the present application will be described with reference to the drawings.

[0102] [Configuration Example of Solid-state Imaging Device]

[0103] The solid-state imaging device of the present embodiment is, for example, embedded in a camera device such as a smartphone or a digital camera, and includes a CMOS image sensor.

[0104] Specifically, as shown in Figure 1 Fig. 1, the solid-state imaging device 1 includes a pixel array unit 2, a vertical drive unit 3, a plurality of column signal processing units 4, a horizontal drive unit 5, a control unit 6, and a signal processing unit 7. In addition, the solid-state imaging device 1 includes a memory 8 that can store a signal processed by the signal processing unit 7 and the like. In the solid-state imaging device 1 of the present embodiment, at least the pixel array unit 2, the vertical drive unit 3, the plurality of column signal processing units 4, the horizontal drive unit 5, and the control unit 6 constitute a CMOS image sensor.

[0105] At least the pixel array unit 2, the vertical drive unit 3, the column signal processing unit 4, the horizontal drive unit 5, the control unit 6, and the signal processing unit 7 are arranged on the same semiconductor substrate or a plurality of semiconductor substrates electrically connected. In addition, the signal processing unit 7 and the memory 8 can be arranged on a semiconductor substrate on which the pixel array unit 2, the vertical drive unit 3, the column signal processing unit 4, the horizontal drive unit 5, and the control unit 6 are arranged, or on a different substrate, or the like. That is, the arrangement position of the signal processing unit 7 and the memory 8 is not limited.

[0106] The pixel array unit 2 has a plurality of pixels 10 arranged in a matrix shape in two dimensions. Each of the plurality of pixels 10 constitutes a light-receiving surface of the pixel 10, and has two photoelectric conversion elements 11R, 11L that can perform photoelectric conversion on input light (incident light), accumulate an amount of signal charge (charge) corresponding to the amount of input light inside, and output the accumulated signal charge.

[0107] In addition, the plurality of pixels 10 are constituted by a plurality of first pixels 10A whose light-receiving surfaces are not light-shielded by an opaque film, and second pixels 10B whose light-receiving surfaces are partially light-shielded by an opaque film, but the arrangement state of the first and second pixels 10A, 10B and the light-shielding state of the light-receiving surfaces are not shown in Figure 1 The detailed contents of the specific configuration of each pixel 10 including the arrangement state thereof or the light-shielding state of the light-receiving surface will be described later.

[0108] In addition to the above-described first pixels 10A and second pixels 10B, the pixel array unit 2 can include a dummy unit pixel that does not have a photoelectric conversion element structure, or a pixel that blocks light input from the outside by light-shielding the light-receiving surface.

[0109] In addition, the pixel array section 2 has a plurality of row signal lines 21 arranged in each row and extending in the row direction, respectively, and a plurality of column signal lines 22 arranged in each column and extending in the column direction, respectively, with respect to the matrix-like pixel arrangement. Each of the plurality of row signal lines 21 is connected to the vertical drive section 3, and each of the plurality of column signal lines 22 is connected to the corresponding column signal processing section 4.

[0110] The vertical drive section 3 is configured by, for example, a shift register, selects a prescribed row signal line 21, and supplies a pulse (signal) for driving the pixel 10 to the selected row signal line 21, thereby driving the pixel 10 in units of rows. In detail, the vertical drive section 3 sequentially selects each pixel 10 of the pixel array section 2 in the vertical direction in units of rows, and supplies a pixel signal based on signal charges generated in the photoelectric conversion element 11 of each pixel 10 according to the amount of input light to the column signal processing section 4 through the column signal line 22.

[0111] Each of the plurality of column signal processing sections 4 is arranged in each column of the pixel 10, and performs signal processing such as noise reduction on the pixel signal output from the pixel 10 of one row per pixel column. The column signal processing section 4 of the present embodiment performs signal processing such as Correlated Double Sampling (CDS) for removing fixed pattern noise inherent to the pixel and A / D (Analog / Digital) conversion.

[0112] The horizontal drive section 5 is configured by, for example, a shift register, and sequentially selects each of the plurality of column signal processing sections 4 by sequentially outputting a horizontal scanning pulse, and sequentially outputs the pixel signal subjected to signal processing by each column signal processing section 4 to the signal processing section 7.

[0113] The control section 6 controls the operation of each section of the solid-state imaging device 1. Specifically, the control section 6 receives an input clock signal and data for instructing an operation mode or the like, and outputs data such as internal information of the solid-state imaging device 1. In detail, the control section 6 generates a clock signal or a control signal that serves as a reference for the operation of the vertical drive section 3, the column signal processing section 4, the horizontal drive section 5, and the like, based on a vertical synchronization signal, a horizontal synchronization signal, and a main clock signal, and outputs the generated clock signal or control signal to the vertical drive section 3, the column signal processing section 4, the horizontal drive section 5, and the like.

[0114] The signal processing section 7 performs various signal processing such as arithmetic processing on the pixel signal output from each column signal processing section 4. The signal processing section 7 of the present embodiment is a DSP (Digital Signal Processor).

[0115] Further, the specific arrangement position of the signal processing section 7 is not limited. Although the signal processing section 7 is arranged at a position different from the CMOS image sensor in the solid-state imaging device 1 of the present embodiment, the entire configuration of the signal processing section 7 can be arranged (mounted) on the CMOS image sensor, or a part of the configuration of the signal processing section 7 can be arranged on the CMOS image sensor.

[0116] The memory 8 is a line memory, a frame memory, a FIFO, or the like, and can store the pixel signals and the like output from the column signal processing sections 4. The specific configuration of the memory 8 will be described later.

[0117] [Example of arrangement of pixels in pixel array section]

[0118] Next, a specific example of arrangement of the pixels arranged in the pixel array section 2 in a matrix shape will be described with reference to Figure 2

[0119] As shown in Fig. 1, a plurality of pixels 10 are arranged in a matrix shape two-dimensionally in the pixel array section 2. In the example shown in Fig. 1, 4 rows x 9 columns of pixels 10 are arranged. Further, two photoelectric conversion elements 11R, 11L are provided in each of the pixels 10. Figure 2 Figure 2 As shown in Fig. 1, a plurality of pixels 10 are arranged in a matrix shape two-dimensionally in the pixel array section 2. In the example shown in Fig. 1, 4 rows x 9 columns of pixels 10 are arranged. Further, two photoelectric conversion elements 11R, 11L are provided in each of the pixels 10.

[0120] As shown in Fig. 1, a plurality of pixels 10 are arranged in a matrix shape two-dimensionally in the pixel array section 2. In the example shown in Fig. 1, 4 rows x 9 columns of pixels 10 are arranged. Further, two photoelectric conversion elements 11R, 11L are provided in each of the pixels 10. Figure 2 Figure 2 In the example shown in Fig. 1, in the case where the pixel of the m-th row and the n-th column is expressed as the pixel of (m, n), the pixels arranged at (1, 1), (1, 5), (1, 9), (3, 1), (3, 5), (3, 9), (5, 5), and (5, 9) are the second pixels 10B whose light receiving surfaces are partially shielded by the opaque film 60, and the remaining pixels are the first pixels 10A.

[0121] The first pixel 10A generates a shot data signal based on the signal charge accumulated in the pixel, and in the case where the signal charges generated in the two photoelectric conversion elements 11R, 11L included in the pixel do not overflow, it is possible to generate a phase difference data signal of the received light by comparing the amounts of the signal charges generated in the two photoelectric conversion elements 11R, 11L.

[0122] ​​​On the other hand, the second pixel 10B is configured to overflow the signal charge generated in the photoelectric conversion elements 11R, 11L of the first pixel 10A, whereby in a case where the phase difference data signal cannot be generated from the first pixel 10A, it is possible to generate the phase difference data signal of the received light by comparing the above-mentioned charges accumulated in each of the second pixels 10B constituting two or more second pixel 10B groups corresponding to each other.

[0123] In the present embodiment, the two or more pixels corresponding to each other constituting the second pixel 10B group mean two or more pixels in which the phase of the light that cannot be received because it is shielded in one second pixel 10B is in a complementary relationship with the phase of the light that can be received because it is not shielded in another second pixel 10B. Figure 2 In the example shown in the drawing, in a case where the row direction is left and right and the column direction is up and down, the combination of the pixels of (1, 1) and (3, 1) in which the upper half and the lower half of the pixels are shielded, the combination of the pixels of (1, 5) and (1, 9) in which the right half and the left half of the pixels are shielded, the combination of the pixels of (3, 9) and (5, 9) in which the right half and the left half of the same pixels are shielded, and the combination of the pixels of (3, 5) and (5, 5) in which the upper right half and the lower left half of the pixels are shielded, respectively belong to two pixels corresponding to each other. Figure 2 Further, in the drawing, for convenience, the combination of the pixels in which the upper half and the lower half, the right half and the left half, the upper right half and the lower left half of the pixels are shielded, respectively, is shown, but this drawing shows a plurality of specific examples in one drawing, and the combination of these second pixels 10B does not necessarily have to be arranged in the pixel array unit 2. For example, the second pixel 10B arranged in the pixel array unit 2 can be a pixel in which the right half or the left half is shielded.

[0124] Figure 2 Here, in order to make the accuracy of the phase difference data signal generated by the second pixel 10B group sufficiently accurate, the two or more pixels corresponding to each other constituting the second pixel 10B group are preferably arranged on rows and columns that are close to each other to some extent. Not limited to the following, but for example, these pixels can be designed so that in the two-dimensional arrangement of the pixel array unit 2, neither the rows nor the columns are spaced apart from each other by 20 pixels or more.

[0125] Here, in order to make the accuracy of the phase difference data signal generated by the second pixel 10B group sufficiently accurate, the two or more pixels corresponding to each other constituting the second pixel 10B group are preferably arranged on rows and columns that are close to each other to some extent. Not limited to the following, but for example, these pixels can be designed so that in the two-dimensional arrangement of the pixel array unit 2, neither the rows nor the columns are spaced apart from each other by 20 pixels or more.

[0126] ​The second pixel 10B is not generally useful for the generation of the shot data signal unlike the first pixel 10A, and thus the shot data signal of the position where the second pixel 10B is arranged can need to be supplemented by the shot data signal from the first pixel 10A in the vicinity. At this time, if the second pixels 10B are arranged at positions too close to each other, the supplementation of the shot data signal can be hindered. Therefore, not limited to the following, but the two or more pixels corresponding to each other constituting the group of the second pixels 10B can be designed, for example, such that both the row and the column are spaced apart from each other by one pixel or more in the two-dimensional arrangement of the pixel array section 2.

[0127] The ratio of the number of the first pixels to the number of the second pixels constituting the pixel 10 arranged in the pixel array section 2 is not particularly limited, but in order to obtain a good shot data signal based on the signal charge accumulated in the first pixel 10A and also to obtain a sufficiently accurate phase difference data signal from the second pixel in a high brightness state where the signal charge overflows from at least one of the two photoelectric conversion elements 11R, 11L included in the first pixel 10A, the ratio is, for example, in the range of the number of the first pixels : the number of the second pixels = 4 : 1 to 64 : 1, preferably in the range of 6 : 1 to 32 : 1, more preferably in the range of 8 : 1 to 24 : 1, and for example, can be 12 : 1.

[0128] [Configuration of Pixel]

[0129] Next, the specific structure of the pixel 10 arranged in the pixel array section 2 in a matrix shape will be described with reference to Figures 3 to 5

[0130] First, the outline structure of the first pixel 10A whose light receiving surface is not shielded by an opaque film will be described with reference to Figure 3

[0131] As shown in Figure 3 , the first pixel 10A includes a semiconductor region 20 constituting a light receiving surface including two photoelectric conversion elements 11R, 11L that generate signal charges by photoelectrically converting received light, and an independent on-chip lens 30 disposed on the semiconductor region 20 in a manner of covering the two photoelectric conversion elements 11R, 11L.

[0132] With this configuration, light incident to the first pixel 10A (for example, Figure 3 ​​Light L1 and L2 (shown in FIG. 1 ) are refracted by the on-chip lens 30 and, at the same time, are incident on one of the two photoelectric conversion elements 11R and 11L through different optical paths and received. Specifically, since the phase of the light incident on the first pixel 10A determines which of the two photoelectric conversion elements 11R and 11L receives the light, a phase difference occurs between the light received by the two photoelectric conversion elements 11R and 11L. Therefore, for the first pixel 10A, a phase difference data signal can be generated by comparing the amount of light received by the two photoelectric conversion elements 11R and 11L, that is, by comparing the amount of signal charge generated by the photoelectric conversion of this light.

[0133] In addition, in this embodiment, the first pixel 10A further includes a color filter 40 and a transparent film 50 between the semiconductor region 20 and the on-chip lens 30. The color filter 40 selects, for example, R (red), G (green), or B (blue) for each pixel so that each pixel is Figure 2 The plane arrangement of the pixel array unit 2 shown is a desired arrangement (for example, a Bayer arrangement). Note that the color filter 40 and the transparent film 50 are not essential components and may not be present.

[0134] Next, refer to Figure 4 The schematic structure of the second pixel 10B in which the light-receiving surface is partially shielded by an opaque film will be described.

[0135] The second pixel 10B, like the first pixel A, includes a semiconductor region 20 including two photoelectric conversion elements 11R and 11L, an on-chip lens 30, a color filter 40, and a transparent film 50. However, unlike the first pixel 10A, the light-receiving surface of the second pixel 10B is partially shielded (blocked) by an opaque film 60.

[0136] Due to this configuration, the second pixel 10B cannot receive light of a phase blocked by the opaque film 60 and can only receive light of a specified phase that is not blocked. Therefore, in the second pixel 10B, unlike the first pixel 10A, each pixel cannot independently generate a phase difference data signal. However, by comparing the amount of light received by each second pixel 10B in a combination of adjacent rows and columns whose received light has a complementary phase, that is, by comparing the amount of signal charge generated by photoelectric conversion of the light, a phase difference data signal can be generated.

[0137] based on Figure 4 The example shown in FIG. 1 is specifically described. As an example of the second pixel 10B, Figure 3 The left side of the light receiving surface (the photoelectric conversion element 11L in the above example) shows the second pixel 10B_R shielded by the opaque film 60. Figure 4The right side of the image shows a second pixel 10B_L, whose right side of the light-receiving surface (in the above example, photoelectric conversion element 11R) is shielded by opaque film 60. Second pixel 10B_R does not receive light with the phase of the shielded left side, but only receives light with the phase of the right side. Second pixel 10B_L does not receive light with the shielded right side, but only receives light with the phase of the left side. Therefore, second pixel 10B_R, which only receives light with the phase of the right side, and 10B_L, which only receives light with the phase of the left side, are complementary to each other. By comparing the amount of light they receive, a phase difference data signal can be generated.

[0138] also, Figure 4 In the second pixels 10B_R and 10B_L shown in FIG, one of the photoelectric conversion elements 11R and 11L is completely shielded by the opaque film 60. However, the second pixel 10B may also be shielded by the opaque film 60. Figure 2 As shown in some second pixels 10B, the photoelectric conversion elements 11R and 11L are partially shielded. Figure 2 Like the second pixels 10B at (1, 1) and (3, 1) of the pixel array section 2 shown, the second pixels 10B are formed by a complementary combination of pixels whose upper halves of the photoelectric conversion elements 11R and 11L constituting the light-receiving surface are respectively shielded, and pixels whose lower halves are respectively shielded.

[0139] In the present embodiment, the second pixel 10B includes two photoelectric conversion elements similar to the first pixel 10A. However, the second pixel 10B may include only one photoelectric conversion element.

[0140] Next, refer to Figure 5 A circuit configuration included in the semiconductor region 20 , which is common to the first pixel 10A and the second pixel 10B constituting the pixel 10 , will be described.

[0141] exist Figure 5 In the illustrated circuit configuration, the pixel 10 includes two photoelectric conversion elements 11R and 11L that generate signal charges through photoelectric conversion based on input light; a floating diffusion 12 that converts the signal charges generated by the photoelectric conversion elements 11R and 11L into a voltage signal (voltage) corresponding to the amount of the signal charges; and a retention capacitor (overflow retention capacitor) 13 connected to the floating diffusion 12 and capable of accumulating signal charges overflowing from the photoelectric conversion elements 11R and 11L. In this embodiment, the photoelectric conversion elements 11R and 11L are, for example, photodiodes.

[0142] Further, the pixel 10 includes a transfer transistor (first switching transistor) 14R, 14L that connects the photoelectric conversion element 11R, 11L to the floating diffusion 12, respectively, a hold switching transistor (second switching transistor) 15 that connects the floating diffusion 12 to the hold capacitor 13, a reset transistor (third switching transistor) 16 that connects the hold capacitor 13 to a reset power supply (reset potential) VDD1, an amplification transistor 17 that amplifies a voltage signal of the floating diffusion 12, and a selection transistor 18 that connects the amplification transistor 17 to a column signal line 22.

[0143] A plurality of row signal lines 21 are wired for each pixel row with respect to the plurality of pixels 10 arranged in a matrix. Further, various drive signals φTX_L, φTX_R, φS, φRES, φSEL are supplied from the vertical drive section 3 to each pixel 10 via the row signal line 21. The above-described drive signals φTX_L, φTX_R, φS, φRES, φSEL are the above-described pulses.

[0144] The floating diffusion 12 charge-voltage converts the signal charge generated by the photoelectric conversion element 11R, 11L into a voltage signal and outputs it. The floating diffusion 12 of the present embodiment is also connected to the reset power supply VDD1 via the hold switching transistor 15 and the reset transistor 16 in this order.

[0145] The hold capacitor 13 is a capacitor that is connected to the floating diffusion 12 via the hold switching transistor 15 as described above, and is also connected to the reset power supply VDD1 via the reset transistor 16.

[0146] The gate electrode of the transfer transistor 14L is supplied with the drive signal φTX_L. This drive signal φTX_L is output from the vertical drive section 3 based on a signal (command) from the control section 6. When the drive signal φTX_L becomes Hi (i.e., when the transfer transistor 14L is turned on), the transfer gate of the transfer transistor 14L becomes in an on state, and the signal charge accumulated in the photoelectric conversion element 11 is transferred to the floating diffusion 12 via this transfer transistor 14. Further, when the drive signal φTX_L becomes Low, the transfer transistor 14L is turned off.

[0147] Likewise, the gate electrode of the transfer transistor 14R is supplied with the drive signal φTX_R. This drive signal φTX_R is output from the vertical drive section 3 based on a signal (command) from the control section 6. When the drive signal φTX_R becomes Hi (i.e., when the transfer transistor 14R is turned on), the transfer gate of the transfer transistor 14R becomes in an on state, and the signal charge accumulated in the photoelectric conversion element 11R is transferred to the floating diffusion 12 via this transfer transistor 14R. Further, when the drive signal φTX_R becomes Low, the transfer transistor 14R is turned off.

[0148] A drive signal φS is applied to the gate electrode of the retention switch transistor 15. This drive signal φS is output from the vertical drive unit 3 based on a signal from the control unit 6. When the drive signal φS goes Hi (i.e., the retention switch transistor 15 is turned on), the retention gate of the retention switch transistor 15 becomes conductive, allowing signal charge to move from the floating diffusion 12 to the retention capacitor 13. Furthermore, when the drive signal φS goes Low, the retention switch transistor 15 is turned off.

[0149] A drive signal φRES is applied to the gate electrode of reset transistor 16. This drive signal φRES is output from vertical drive unit 3 based on a signal from control unit 6. When drive signal φRES goes Hi (i.e., reset transistor 16 turns on), the reset gate of reset transistor 16 turns on. Based on drive signal φS applied to the gate electrode of retention switch transistor 15, the potentials of floating diffusion 12 and retention capacitor 13, or the potential of retention capacitor 13, are reset to the level (reset level) of reset power supply (reset potential) VDD1. Furthermore, when drive signal φRES goes Low, reset transistor 16 turns off.

[0150] Amplifier transistor 17 has a gate electrode connected to floating diffusion 12 and a drain electrode connected to power supply VDD2. This amplifier transistor 17 serves as the input to a readout circuit (so-called source follower circuit SF) that reads the voltage of floating diffusion 12 as a pixel signal. Specifically, amplifier transistor 17 has its source electrode connected to column signal line 22 via select transistor 18, thereby forming a constant current source and source follower circuit SF connected to one end of column signal line 22.

[0151] The selection transistor 18 is connected to the source electrode of the amplifier transistor 17 and the column signal line 22. A drive signal φSEL is applied to the gate electrode of the selection transistor 18. This drive signal φSEL is output from the vertical drive unit 3 based on a signal from the control unit 6. When the drive signal φSEL goes Hi (i.e., the selection transistor 18 is turned on), the select gate of the selection transistor 18 becomes conductive, and the pixel 10 becomes selected. As a result, the pixel signal output from the amplifier transistor 17 is output to the column signal line 22 via the selection transistor 18. Furthermore, when the drive signal φSEL goes Low, the selection transistor 18 is turned off.

[0152] Finally, refer to Figure 6 The relationship between the potential barrier between the two photoelectric conversion elements 11R and 11L in the pixel 10 and the potential barrier between the two photoelectric conversion elements 11R and 11L and the holding capacitor 13 will be described.

[0153] like Figure 6As shown, in the pixel 10 of the present embodiment, the potential barrier between the two photoelectric conversion elements 11R, 11L is lower than the potential barrier between the two photoelectric conversion elements 11R, 11L and the holding capacitor 13. In Figure 5 In the circuit configuration shown, the potential barrier between the two photoelectric conversion elements 11R, 11L is set by adjusting the holding gate of the transfer transistors 14R, 14L, and the potential barrier between the two photoelectric conversion elements 11R, 11L and the holding capacitor 13 is set by adjusting the holding gate of the holding switch transistor 15.

[0154] Therefore, in the pixel 10 of the present embodiment, at the point in time when the transfer transistors 14R, 14L and the holding switch transistor 15 are turned off, in the case where the signal charge exceeding the charge storage capacity that can be held is generated in one of the photoelectric conversion elements 11R, 11L (e.g., the photoelectric conversion element 11L), the signal charge overflowing from the above one photoelectric conversion element 11R, 11L first exceeds the lower potential barrier between the photoelectric conversion elements 11R, 11L (the holding gate of the transfer transistor 14R, 14L), preferentially flows into the other photoelectric conversion element 11R, 11L (e.g., the photoelectric conversion element 11R) and is accumulated. Also, when the signal charge accumulated in both of the photoelectric conversion elements 11R, 11L reaches the limit of the accumulation capacity that can be held, the signal charge overflowing from the photoelectric conversion elements 11R, 11L exceeds the higher potential barrier between the photoelectric conversion elements 11R, 11L and the holding capacitor 13 (the holding gate of the holding switch transistor 15), flows into the holding capacitor 13 and is accumulated.

[0155] Typically, the noise of the charge held in the photoelectric conversion elements 11R, 11L tends to be lower than the noise of the signal charge held in the holding capacitor 13. Therefore, as in the present embodiment, according to the pixel 10 configured to accumulate the signal charge generated in the photoelectric conversion elements 11R, 11L as much as possible in the photoelectric conversion elements 11R, 11L rather than the holding capacitor 13, it is possible to achieve the effect of a relatively high SN ratio of the output photographic data signal.

[0156] Furthermore, in the first pixel 10A, if signal charge overflows from one of the photoelectric conversion elements 11R and 11L and flows into the other photoelectric conversion element 11R or 11L, the information about the phases of light received by each of the photoelectric conversion elements 11R and 11L overflows or mixes. Consequently, the signal charge held in the photoelectric conversion elements 11R and 11L does not contribute to generating a correct phase difference data signal. Therefore, in this embodiment, if signal charge overflow occurs in a first pixel 10A, the first pixel 10A can output a reliable captured data signal using the driving method described below, but cannot output a reliable phase difference data signal. In such cases, the signal generated by the second pixel 10B can be used as a reliable phase difference data signal.

[0157] [Example of Driving Pixels of Solid-State Imaging Device]

[0158] Reference Figure 7 The driving timing of the pixel 10 constructed as described above will be described. Figure 7 1 and 2 show the drive signal (pulse of the control signal) of the pixel 10 and the output voltage (pixel signal) appearing on the column signal line 22 accordingly, where Vout represents the output voltage.

[0159] First, at time t01 , while the selection transistor 18 is off, the transfer transistors 14R and 14L, the retention switch transistor 15 , and the reset transistor 16 are turned on, and the floating diffusion 12 and the retention capacitor 13 are reset.

[0160] Thus, the transfer transistor 14 is turned off while the floating diffusion 12 is connected to the reset power supply VDD1 , thereby bringing the photoelectric conversion elements 11R and 11L into a floating state, and signal charges generated by input light begin to be accumulated in the photoelectric conversion elements 11R and 11L.

[0161] Almost simultaneously (more specifically, with a slight delay) with the turning off of the transfer transistors 14R and 14L, the retention switch transistor 15 and the reset transistor 16 are turned off, respectively, whereby the floating diffusion region 12 and the retention capacitor 13 also enter a floating state.

[0162] Here, when the signal charge overflows (overflows) from at least one of the photoelectric conversion elements 11R and 11L, the holding capacitor 13 that has become a floating state and the photoelectric conversion elements 11R and 11L that have not overflowed can hold (accumulate) the overflowed signal charge. Figure 6The signal charge overflowing from one of the photoelectric conversion elements 11R, 11L is first held (accumulated) in the other photoelectric conversion element 11R, 11L. After the signal charge held in either one of the photoelectric conversion elements 11R, 11L reaches the limit of the accumulation capacitance that can be held, the overflowing signal charge flows into the holding capacitance 13 to be held.

[0163] Thus, in a state where the transfer transistors 14R, 14L, the holding switch transistor 15, and the reset transistor 16 are turned off, the pixel signal of the pixel 10 is read out from the time t02 after the lapse of the prescribed accumulation period ΔT after the transfer transistors 14R, 14L are turned off.

[0164] Specifically, when the control section 6 (in detail, the vertical drive section 3 that receives the instruction of the control section 6) turns the selection transistor 18 on by making the drive signal φSEL Hi from the state where the respective switch transistors 14R, 14L, 15, 16, 18 of the pixel 10 are turned off, the pixel 10 is connected to the column signal line 22.

[0165] Next, at the time t03, the potential of the floating diffusion region 12 (floating diffusion region reference potential) is read out from the source follower circuit SF and stored in the memory 8 as the first signal (pixel signal) after A / D conversion.

[0166] In the solid-state imaging device 1 of the present embodiment, the first signal is stored in the memory 8 in a state after A / D conversion (i.e., a state where the signal is converted into a digital signal) in the column signal processing section 4, but the configuration is not limited to this. It is also possible to perform each of the processes after the pixel signal (voltage of the floating diffusion region 12) read out from the source follower circuit SF is held as an analog signal. Further, the pixel signal (second to fifth signals) read out from the source follower circuit SF is also the same at the time point thereafter.

[0167] Next, at the time t04, the control section 6 turns the transfer transistor 14R on by making the drive signal φTX_R Hi and the photoelectric conversion element 11R transfer the signal charge accumulated during the accumulation period ΔT to the floating diffusion region 12, and then turns the transfer transistor 14 off by making the drive signal φTX_R Low.

[0168] The signal is read out from the source follower circuit SF at the time t05 and stored in the memory 8 as the second signal (pixel signal) after A / D conversion.

[0169] Next, at time t06, the control section 6 makes both of the drive signals φTX_R and φTX_L Hi and turns on the transfer transistors 14R and 14L, and after the signal charges accumulated during the period ΔT of the photoelectric conversion elements 11R and 11L are transferred to the floating diffusion region 12, the drive signals φTX_R and φTX_L are made Low and the transfer transistors 14 are turned off.

[0170] This signal is read out from the source follower circuit SF at time t07, and after A / D conversion, is stored in the memory 8 as a third signal (pixel signal).

[0171] Next, at time t08, the control section 6 makes the drive signal φS Hi and turns on the hold switch transistor 15, and after the floating diffusion region 12 and the hold capacitor 13 are connected, the drive signals φTX_R and φTX_L are made Hi and Low again, and the transfer transistors 14 are turned on and off. The voltage of the floating diffusion region 12 at this time is read out from the source follower circuit SF at t09, and after A / D conversion, is stored in the memory 8 as a fourth signal (pixel signal).

[0172] Finally, at time t10, the control section 6 makes the drive signal φRES Hi and turns on the reset transistor 16, and after the floating diffusion region 12 and the hold capacitor 13 are connected to the reset power source (reset potential) VDDl, the signal charges of the floating diffusion region 12 and the hold capacitor 13 are all initialized (reset). The voltage (reset level) of the floating diffusion region 12 and the hold capacitor 13 after this initialization is read out from the source follower circuit SF at tll, and after A / D conversion, is stored in the memory 8 as a fifth signal (pixel signal).

[0173] By processing the first to fifth signals obtained in the driving of the above pixel 10, the signals based on the signal charges held in the photoelectric conversion elements 11R and 11L and the hold capacitor 13 can be restored. Specifically, by subtracting the first signal from the second signal, the signal (signal R) of the charges held in the photoelectric conversion element 11R after correction based on the deviation of the reset noise and the DC level is restored. Similarly, by subtracting the first signal from the third signal, the signal (signal R+L) of the total number of charges held in the photoelectric conversion elements 11R and 11L after correction based on the deviation of the reset noise and the DC level is restored. Further, by subtracting the second signal from the third signal, the signal (signal L) of the total number of charges held in the photoelectric conversion element 11L after correction based on the deviation of the reset noise and the DC level is restored. Moreover, by subtracting the signal 05 from the signal 04, the signal (signal R+L+C) of the signal charges held in the photoelectric conversion elements 11R and 11L and the hold capacitor 13 after correction based on the deviation of the DC level is restored.

[0174] In this case, in the case where the pixel 10 is the first pixel 10A, in the case where the signal charges generated by the light respectively incident on the photoelectric conversion elements 11R, 11L during the accumulation period ΔT do not exceed the capacitances that the photoelectric conversion elements 11R, 11L can hold, and no overflow from the photoelectric conversion elements 11R, 11L occurs, the signal R+L recovered by the above-described processing can be used as a correct shooting data signal.

[0175] Also, in this case, the information output from the photoelectric conversion elements 11R, 11L holds information about the phases of the light respectively incident thereon, and therefore, the signal R and the signal L recovered by the above-described processing can be used as reliable phase signals from which a correct phase difference data signal can be generated by comparing them.

[0176] In addition, in the first pixel 10A, in the case where the signal charges generated by the light respectively incident on the photoelectric conversion elements 11R, 11L during the accumulation period ΔT exceed the capacitance that one of the photoelectric conversion elements 11R, 11L can hold, and the signal charges overflow from one of the photoelectric conversion elements 11R, 11L to the other, the signal R+L recovered by the above-described processing can be used as a correct shooting data signal.

[0177] However, in this case, since the signal charges overflow from one of the photoelectric conversion elements 11R, 11L to the other, the signal R and the signal L do not have the meaning as phase signals. Therefore, the signal R and the signal L cannot be used to generate a reliable phase difference data signal.

[0178] In addition, in the first pixel 10A, in the case where the signal charges generated by the light respectively incident on the photoelectric conversion elements 11R, 11L during the accumulation period ΔT exceed the capacitance that one of the photoelectric conversion elements 11R, 11L can hold, and the signal charges overflow from the photoelectric conversion elements 11R, 11L to the holding capacitance 13, the signal R+L recovered by the above-described processing, unlike the above-described two cases, does not have the meaning as a shooting data signal since it exceeds the signal amount handled by the photoelectric conversion elements 11R, 11L. In this case, if the signal from the holding capacitance 13 is used, the above-described signal R+L+C can be used as a correct shooting data signal.

[0179] In this case, the signal R and the signal L also do not have the meaning as phase signals, and therefore, cannot be used to generate a reliable phase difference data signal.

[0180] In addition, in the case of the second pixel 10B, the second pixel 10B does not generally produce a useful photographing data signal. In a combination of the second pixels 10B in which the phases of the accepted light are in a complementary relationship, the signal R+L (in the case where overflow from the photoelectric conversion elements 11R, 11L to the holding capacitor 13 does not occur) or the signal R+L+C (in the case where overflow from the photoelectric conversion elements 11R, 11L to the holding capacitor 13 occurs) of each of the second pixels 10B restored by the above-described processing can be used as a phase signal for generating a reliable phase difference data signal in the second pixel 10B group.

[0181] [Example of output of phase difference data signal from solid-state imaging device]

[0182] As described above, in the solid-state imaging device 1 of the present embodiment, both a unit that generates a phase difference data signal from the first pixel 10A and a unit that generates a phase difference data signal from the second pixel 10B are provided. These units can be appropriately selected in accordance with the brightness of the photographing scene or the exposure time in which the solid-state imaging device 1 is used. For example, in the case where the photographing scene is low brightness or the exposure time (accumulation period ΔT) is short, it is difficult to generate overflow in the photoelectric conversion elements 11R, 11L, and thus it is considered that the phase difference data signal generated in the first pixel 10A that generates photographing data can be effectively utilized. On the other hand, in the case where the photographing scene is high brightness or the exposure time (accumulation period ΔT) is long, it is easy to generate overflow in the photoelectric conversion elements 11R, 11L, and it is difficult to generate a reliable phase difference data signal in the first pixel 10A, and thus it is considered that it is preferable to use the phase difference data signal generated in the second pixel 10B instead. Hereinafter, an example of output of a phase difference data signal in the pixel array unit 2 of the solid-state imaging device 1 of the present embodiment will be described.

[0183] Figure 8 is a flowchart illustrating a first example of output of a phase difference data signal from a solid-state imaging device. As shown in Figure 8 The first example of output includes the following steps 801 to 803.

[0184] First, in step 801, the signal data generated in a plurality of pixels 10 (i.e., the first pixel 10A and the second pixel 10B) included in a fixed range of the pixel array unit 2 is accumulated on the memory 8 by the method illustrated in the above-described example of driving of the pixel 10 or the like. The memory 8 is, for example, a line memory that accumulates the signal data of the pixels 10 arranged on one or more lines as a reading target among the plurality of pixels 10 arranged in a matrix shape in two dimensions in the pixel array unit 2.

[0185] Next, in step 802, the signal data regarding the first pixel 10A is processed in the pixels 10 (i.e., referable on the memory 8) associated with the signal data accumulated on the memory 8, and a phase difference data signal is output from each of the first pixels 10A.

[0186] Specifically, each of the first pixels 10A referable on the memory 8 outputs a phase difference data signal (hereinafter, also referred to as first phase difference data signal) generated based on the signal charge accumulated in the photoelectric conversion element 11R, 11L of the first pixel 10A, and a phase difference data signal (hereinafter, also referred to as second phase difference data signal) generated based on the signal charge accumulated in the second pixel 10B group referable on the memory 8.

[0187] The second pixel 10B group referred to for generating the second phase difference data signal output as the phase difference information of the first pixel 10A as the object is preferably a second pixel 10B group located in the vicinity of the first pixel 10A as the object, and more preferably the shortest group among all the second pixel 10B groups referable on the memory 8, in terms of the average distance from the first pixel 10A as the object to each of the second pixels 10B constituting the second pixel 10B group.

[0188] After that, in step 803, if there are pixels 10 in the pixel array unit 2 that have not been read on the memory 8, the signal data accumulated on the memory 8 is updated, and the above-described steps 801 to 802 are repeated until all the pixels 10 included in the pixel array unit 2 are read.

[0189] In the case of the above-described first output example, for the first phase difference data signal and the second phase difference data signal output from the first pixel 10A of the pixel array unit 2, which one of the phase difference data signals to flexibly use can be determined by the control device or the like of the camera device that receives the output signal. Alternatively, the two phase difference data signals can be flexibly used depending on the output destination.

[0190] Figure 9 is a flowchart illustrating a second output example of the phase difference data signal from the solid-state imaging device. As Figure 9 indicated, the second output example includes the following steps 901 to 903.

[0191] First, in step 901, the signal data generated in the plurality of pixels 10 included in the fixed range of the pixel array unit 2 is accumulated on the memory 8, similarly to the first output example.

[0192] Next, in step 902, each of the first pixels 10A referable on the memory 8 is instructed from the outside of the solid-state imaging device 1 to output the first phase difference data signal or the second phase difference data signal. The above-mentioned instruction from the outside is executed by, for example, a control device or the like possessed by a camera device on which the solid-state imaging device 1 is mounted.

[0193] For example, in a case where it is determined that the camera device does not use the hold capacitor 13 of the pixel 10, that is, in a case where the HDR mode is not adopted, the control device of the camera device can instruct the phase difference information of the first pixel 10A as the object to output the first phase difference data signal. On the other hand, in a case where it is determined that the camera device uses the hold capacitor 13 of the pixel 10, that is, in a case where the HDR mode is adopted, the control device of the camera device can instruct the phase difference information of the first pixel 10A as the object to output the second phase difference data signal.

[0194] In this case, as to whether the pixel 10 in the pixel array unit 2 uses the hold capacitor 13, in most cases, the same mode is adopted based on the setting of the control device of the camera device. However, it is not always necessary that all the pixels 10 in the pixel array unit 2 adopt the same mode, and an instruction to use the hold capacitor 13 can be transmitted to the first pixels 10A arranged in a part of the pixel array unit 2, and an instruction not to use the hold capacitor 13 can be transmitted to the remaining part. For example, different instructions can be given according to the arrangement position of the pixel 10 in such a manner that the pixel 10 in the vicinity of the center of all the pixels 10 possessed by the camera device, which is susceptible to light, is caused not to use the hold capacitor 13, and the pixel 10 in the vicinity of the periphery, which is difficult to be affected by light, is caused to use the hold capacitor 13.

[0195] After that, in step 903, if there is a pixel 10 in the pixel array unit 2 which has not been read on the memory 8, the signal data accumulated on the memory 8 is updated, and the above-mentioned steps 901 to 902 are repeated until all the pixels 10 included in the pixel array unit 2 are read.

[0196] In the case of the above-mentioned second output example, as compared with the first output example, the amount of the signal to be output can be reduced, and thus the burden of the signal processing in the control device or the like of the camera device which receives the output signal can be reduced.

[0197] Figure 10 is a flowchart illustrating a second output example of the phase difference data signal from the solid-state imaging device. As shown in Figure 10 The second output example includes the following steps 1001 to 1003.

[0198] First, in step 1001, as with the first output example, signal data generated in a plurality of pixels 10 included in a fixed range of the pixel array section 2 is accumulated on the memory 8.

[0199] Next, in step 1002, for each of the first pixels 10A referable on the memory 8, it is selected whether to output the first phase difference data signal or the second phase difference data signal based on the judgment of the solid-state imaging device 1 itself. The above selection is performed by the signal processing section 7, for example, based on various signals of the first pixel 10A as the subject.

[0200] By Figure 11 The processing for each first pixel 10A in the above step 1002 is shown in detail. In step 1101, for the first pixel 10A as the subject, the signal processing section 7 judges whether each of the signals R and L based on the signal charges accumulated in the photoelectric conversion elements 11R and 11L reaches a threshold value indicating generation of overflow in the photoelectric conversion elements 11R and 11L. In the case where neither of the signals R and L reaches the threshold value, in step 1102, the first phase difference data signal is output as the phase difference information of the first pixel 10A as the subject. Whereas, in the case where at least one of the signals R and L reaches the threshold value, overflow occurs in the photoelectric conversion elements 11R and 11L, and reliable phase difference data signals cannot be obtained from the signals R and L, therefore, in step 1103, the second phase difference data signal is output as the phase difference information of the first pixel 10A as the subject. Thereafter, in step 1104, steps 1101 to 1103 are repeated until all the first pixels 10A referable on the memory 8 output phase difference data signals.

[0201] In the case where the first phase difference data signal is adopted as the phase difference information of the first pixel 10A, the phase difference data signal generated by comparing the signal R and the signal L in the above first pixel 10A is output.

[0202] In addition, in the case where the second phase difference data signal is adopted as the phase difference information of the first pixel 10A, it is judged whether overflow from the photoelectric conversion elements 11R and 11L to the holding capacitor 13 occurs in each pixel constituting the second pixel 10B group, and it is preferable that, in the case where the above overflow does not occur, the signal R+L of the second pixel 10B be adopted as the phase signal for generating a phase difference data signal in the group, and, in the case where the above overflow occurs, the signal R+L+C of the second pixel 10B be adopted as the phase signal. Whether overflow from the photoelectric conversion elements 11R and 11L to the holding capacitor 13 occurs can be judged, for example, by judging whether a threshold value indicating generation of overflow in both of the photoelectric conversion elements 11R and 11L is reached.

[0203] Further, in a case where overflow from the photoelectric conversion elements 11R, 11L to the holding capacitor 13 does not occur, the signal charge held in the holding capacitor 13 is theoretically zero. Therefore, even in such a case, the second pixel 10A is considered to generate a signal R+L+C instead of a signal R+L as the phase signal. However, in reality, the signal R+L+C includes signal noise caused by the holding capacitor 13. Therefore, in a case where overflow to the holding capacitor 13 does not occur, in order to improve the SN ratio of the phase signal, as described above, it is preferable to use the signal R+L instead of the signal R+L+C.

[0204] Further, in a case where the second phase difference data signal is output as the phase difference information of the first pixel 10A, it is preferable that a device (for example, a camera device) that receives the output phase difference data signal appropriately complementarily processes the output phase difference data signal to perform the same processing as the phase difference data signal generated on the basis of the signal charge accumulated in the photoelectric conversion elements 11R, 11L of the other first pixel 10A.

[0205] After that, in step 1003, if there is a pixel 10 in the pixel array section 2 that has not been read on the memory 8, the signal data accumulated on the memory 8 is updated, and the above-described steps 1001 to 1002 are repeated until all the pixels 10 included in the pixel array section 2 are read.

[0206] In the case of the above-described third output example, compared with the second output example, the phase difference data signal output by the judgment of the solid-state imaging device 1 itself is selected on the basis of whether overflow occurs in the photoelectric conversion elements 11R, 11L of the first pixel 10A, and thus a more reliable phase difference signal can be output from the solid-state imaging device 1.

[0207] The phase difference data signal output from each pixel 10 as described above can be used, for example, for autofocusing in a camera device or the like provided with the solid-state imaging device 1. Further, the above-described phase difference data signal can be used, for example, for various uses such as depth estimation (depth mapping) in addition to autofocusing.

[0208] <Second Embodiment>

[0209] Next, the second embodiment will be described.

[0210] [Configuration of Solid-state Imaging Device]

[0211] The solid-state imaging device 1 of the second embodiment of the present application is the same as the first embodiment except for the relationship between the potential barrier between the two photoelectric conversion elements 11R, 11L and the potential barrier between the two photoelectric conversion elements 11R, 11L and the holding capacitor 13 in the pixel 10. Hereinafter, the constituent elements of the solid-state imaging device are explained using the same reference numerals as those of the first embodiment in the present embodiment.

[0212] Figure 12 The relationship between the potential barrier between the two photoelectric conversion elements 11R, 11L and the potential barrier between the two photoelectric conversion elements 11R, 11L and the holding capacitor 13 in the pixel 10 of the solid-state imaging device 1 of the second embodiment is shown. As shown in the drawing, in the pixel 10 of the present embodiment, the potential barrier between the two photoelectric conversion elements 11R, 11L is higher than the potential barrier between the two photoelectric conversion elements 11R, 11L and the holding capacitor 13. Therefore, in the pixel 10 of the present embodiment, at the time point when the transfer transistors 14R, 14L and the holding switch transistor 15 are turned off, in the case where the signal charge exceeding the charge storage capacity that can be held is generated in one of the photoelectric conversion elements 11R, 11L (for example, the photoelectric conversion element 11L), the signal charge overflowing from the above one photoelectric conversion element 11R, 11L first exceeds the lower potential barrier between the photoelectric conversion element 11R, 11L and the holding capacitor 13, and flows into and is accumulated in the holding capacitor 13 preferentially. Figure 12

[0213] In the present embodiment, even in the case where only one of the photoelectric conversion elements 11R, 11L (for example, the photoelectric conversion element 11L) overflows, if the other one (for example, the photoelectric conversion element 11R) does not overflow, the generation source of the signal charge accumulated in the holding capacitor 13 is the above one photoelectric conversion element 11R, 11L (for example, the photoelectric conversion element 11L), that is, the signal charge accumulated in the holding capacitor 13 has phase information. Therefore, in this case, if the total number of the signal charge accumulated in the above one photoelectric conversion element 11R, 11L (for example, the photoelectric conversion element 11L) in which overflow occurs and the signal charge accumulated in the holding capacitor 13, and the signal charge accumulated in the other one photoelectric conversion element 11R, 11L (for example, the photoelectric conversion element 11R) in which overflow does not occur are compared, a reliable phase difference data signal can be generated. Therefore, according to the present embodiment, in a shooting scene where the signal charge generated in the photoelectric conversion elements 11R, 11L overflows in a high brightness or a long exposure time, the effect of generating a phase difference data signal with higher reliability than that of the first embodiment can be achieved.

[0214] [Driving example of pixel of solid-state imaging device]

[0215] ​The timing of driving the pixel 10 of this embodiment can be the same as that of the first embodiment. As with the first embodiment, by processing the first to fifth signals obtained in the driving of such a pixel 10, the signal R, the signal R+L, the signal L, and the signal R+L+C can be restored. Also, in this embodiment, by subtracting the signal R from the signal R+L+C, the signal R+C can be restored, and by subtracting the signal R from the signal R+L+C, the signal L+C can be restored.

[0216] Here, in the first pixel 10A, in a case where no overflow occurs from the photoelectric conversion elements 11R, 11L during the accumulation period ΔT, as with the first embodiment, the signal R+L can be used as a correct photographing data signal, and the signal R and the signal L can be used as reliable phase signals from which a correct phase difference data signal can be generated by comparing them.

[0217] On the other hand, in the first pixel 10A, in a case where overflow occurs from at least one of the photoelectric conversion elements 11R, 11L during the accumulation period ΔT, unlike the first embodiment, the signal R+L exceeds the amount of signal that the photoelectric conversion elements 11R, 11L can handle, and thus it has no meaning as a photographing data signal. In this case, the signal R+L+C can be used as a correct photographing data signal.

[0218] In addition, in this case, since the signal R and the signal L have no meaning as phase signals, they cannot be used to generate reliable phase difference data signals. However, if overflow occurs in only one of the photoelectric conversion elements 11R, 11L, by comparing the signal obtained by adding the signal corresponding to the photoelectric conversion element 11R, 11L in which overflow occurs and the signal C to the signal corresponding to the photoelectric conversion element 11R, 11L in which no overflow occurs, and the signal corresponding to the photoelectric conversion element 11R, 11L in which no overflow occurs, a correct phase difference data signal can be generated. For example, in a case where the signal charge generated in the photoelectric conversion element 11L overflows, and no overflow occurs in the photoelectric conversion element 11R, by comparing the signal R and the signal L+C, a correct phase difference data signal can be generated.

[0219] Further, in a case where overflow occurs in both of the photoelectric conversion elements 11R, 11L, the signal charge accumulated in the holding capacitor 13 flows out from both of the photoelectric conversion elements 11R, 11L, and the signal charge that overflows is mixed. Therefore, in such a case, the signal charge accumulated in the holding capacitor 13 cannot be used as a phase signal.

[0220] In the second pixel 10B that does not generate a shooting data signal, when no overflow occurs in any of the photoelectric conversion elements 11R and 11L, the signal R+L can be used as a phase signal for generating a reliable phase difference data signal in the second pixel 10B group. When overflow occurs, the signal R+L+C can be used as a phase signal for generating a reliable phase difference data signal in the second pixel 10B group.

[0221] [Example of Output of Phase Difference Data Signal from Solid-State Imaging Device]

[0222] The phase difference data signal can be output from the pixel array unit 2 of the solid-state imaging device 1 of the second embodiment in the same manner as in the first embodiment except for the details of step 1002 of the third output example described below. Figure 13 The processing for each first pixel 10A in step 1002 in the second embodiment described above will be described in detail.

[0223] In step 1301 , for the first pixel 10A as a target, the signal processing unit 7 determines whether each of the signals R and L based on the signal charges accumulated in the photoelectric conversion elements 11R and 11L has reached a threshold indicating that overflow has occurred in the photoelectric conversion elements 11R and 11L.

[0224] If both the signal R and the signal L do not reach the threshold, then in step 1302 , a first phase difference data signal generated by comparing the signal R and the signal L in the first pixel 10A is output.

[0225] On the other hand, when one of the signals R and L reaches the above-mentioned threshold value, that is, overflow occurs in one of the photoelectric conversion elements 11R, 11L, in step 1303, a phase difference data signal (also called the first phase difference signal with overflow capacitance added) generated by comparing the signals R, L in the above-mentioned first pixel 10A, the signals corresponding to the photoelectric conversion elements 11R, 11L where overflow occurs plus the signal C, and the signals corresponding to the photoelectric conversion elements 11R, 11L where no overflow occurs is output.

[0226] Furthermore, when both signals R and L reach the threshold, signal charge overflowing from both photoelectric conversion elements 11R and 11L flows into holding capacitor 13. Signal C generated by holding capacitor 13 does not contain phase information. Therefore, in step 1304, a second phase difference data signal is output as phase difference information for the target first pixel 10A. Step 1304 can be performed in the same manner as step 1103 in the first embodiment.

[0227] Afterwards, in step 1305 , steps 1301 to 1304 are repeated until all first pixels 10A on the memory 8 that can be referenced output phase difference data signals.

[0228] Furthermore, the solid-state imaging device of the present invention is not limited to the above-described embodiments. Various modifications are possible without departing from the spirit of the present invention. For example, components of one embodiment may be added to components of another embodiment, or a portion of components of one embodiment may be replaced with components of another embodiment. Furthermore, a portion of components of one embodiment may be deleted.

[0229] Specifically, in the above-mentioned first embodiment and second embodiment, the second pixel 10B that is a combination of two or more second pixels 10B that are configured in a manner capable of generating a phase difference data signal for received light can be a pixel group in which the light-receiving surface of the pixel is partially shielded by an opaque film 60, but the second pixel in the present invention is not limited to this manner.

[0230] For example, Figure 14 as well as Figure 15 As shown in the example, a combination of two or more second pixels 10B' sharing a single on-chip lens 30' can be used as a second pixel group. In this example, two second pixels 10B' are adjacent to each other in the pixel array unit 2', and an on-chip lens 30' is independently provided in each second pixel 10B' group. In this example, the signal charge generated by the second pixels 10B' can be processed in the same manner as in the first and second embodiments, and a phase difference data signal can be output.

[0231] Furthermore, in the first and second embodiments described above, the pixel 10 includes two photoelectric conversion elements 11R and 11L. However, the number of photoelectric conversion elements included in the pixel 10 is not limited to two and may be three or more. Furthermore, the only pixel that needs to include two or more photoelectric conversion elements 11R and 11L is the first pixel 10A; the second pixel 10B may include only one photoelectric conversion element.

[0232] Unless otherwise specified, the directional terms “up”, “down”, “left” and “right” mentioned in the above embodiments refer to the up, down, left and right directions in the drawings and do not limit the directions of the embodiments of the present invention.

[0233] For the purpose of illustrating the application, there is shown in the drawings a form that is postulated to be practical and sufficient to convey a thorough and complete understanding of the application to others skilled in the art, but it being understood that the application is not limited to the precise form or embodiment illustrated in the drawings. In which:

[0234] BRIEF DESCRIPTION OF DRAWINGS

[0235] 1…solid-state imaging device, 2…pixel array section, 21…row signal line, 22…column signal line, 3…vertical drive section, 4…column signal processing section, 5…horizontal drive section, 6…control section, 7…signal processing section, 8…memory (storage section), 10A, 10B…pixel, 11R, 11L…photoelectric conversion element, 12…floating diffusion region, 13…hold capacitor, 14R, 14L…transfer transistor (first switch transistor), 15…hold switch transistor, first hold switch transistor (second switch transistor), 16…reset transistor (third switch transistor), 17…amplification transistor, 18…selection transistor, 20…semiconductor region, 30…on-chip lens, 40…color filter, 50…transparent film, 60…opaque film, SF…source follower circuit, VDD1…reset power supply (reset potential), VDD2…power supply, φRES, φS, φS1, φSEL, φTX_R, φTX_L…drive signal.

Claims

1. A solid-state imaging device, characterized in that: comprising a plurality of first pixels and a plurality of second pixels different from the plurality of first pixels, Each of the plurality of first pixels and the plurality of second pixels comprises: One or more photoelectric conversion elements, which constitute the light-receiving surface of the pixel and generate electric charge by photoelectrically converting received light; a floating diffusion region connected to the one or more photoelectric conversion elements and converting the charge into a voltage corresponding to the amount of the charge; as well as a holding capacitor connected to the floating diffusion region and capable of accumulating the charge overflowing from the one or more photoelectric conversion elements, Each of the plurality of first pixels is configured to include two or more photoelectric conversion elements, and the two or more photoelectric conversion elements are connected to the floating diffusion region. By comparing the charges accumulated in the two or more photoelectric conversion elements, a phase difference data signal can be generated. Two or more second pixels among the plurality of second pixels together constitute a second pixel group, The second pixel group is configured to generate a phase difference data signal by comparing the charges accumulated in each of the second pixels constituting the second pixel group. In each of the plurality of second pixels, When the total amount of charges accumulated in the one or more photoelectric conversion elements is less than a predetermined saturation charge amount, a phase difference data signal is generated based on the total amount of charges accumulated in the one or more photoelectric conversion elements. When the total amount of charges accumulated in the one or more photoelectric conversion elements is greater than a predetermined saturation charge amount, a phase difference data signal is generated based on the total amount of charges accumulated in the one or more photoelectric conversion elements and the charges accumulated in the holding capacitor.

2. The solid-state imaging device according to claim 1, wherein In each of the two or more pixels constituting the second pixel group, a portion of the light receiving surface of the pixel is blocked to prevent the portion of the light receiving surface from receiving light.

3. The solid-state imaging device according to claim 1, wherein An independent on-chip lens is provided in each of the plurality of first pixels. An independent on-chip lens is provided in each of the second pixel groups, and the two or more pixels constituting the second pixel group share the one on-chip lens.

4. The solid-state imaging device according to any one of claims 1 to 3, wherein In each of the plurality of first pixels, a potential barrier between the two or more photoelectric conversion elements is lower than a potential barrier between the photoelectric conversion element and the holding capacitor.

5. The solid-state imaging device according to any one of claims 1 to 3, wherein In each of the plurality of first pixels, The potential barrier between the two or more photoelectric conversion elements is higher than the potential barrier between the photoelectric conversion element and the holding capacitor.

6. The solid-state imaging device according to any one of claims 1 to 3, wherein The solid-state imaging device, for each of the plurality of first pixels, Determine whether the charge held by each of the two or more photoelectric conversion elements has reached a threshold value indicating that overflow has occurred in the photoelectric conversion element. If none of the charges have reached the threshold value, output a phase difference data signal based on the charge generated in the two or more photoelectric conversion elements in the first pixel. If at least one of the charges has reached the threshold value, output a phase difference data signal based on the charge generated in the second pixel group determined by the solid-state imaging device.

7. A camera device, characterized in that: Include: The solid-state imaging device according to any one of claims 1 to 6, and A control device configured to control the solid-state imaging device.

8. The camera device according to claim 7, wherein: Based on the signal from the control device, it is determined whether the solid-state imaging device outputs a phase difference data signal for each pixel based on the charge generated in the two or more photoelectric conversion elements possessed by the first pixel, and / or whether it outputs a phase difference data signal for each pixel based on the charge generated in the second pixel group composed of the two or more second pixels.

9. The camera device according to claim 7 or 8, wherein: The camera device is a mobile terminal.

Images