A method of cutting a superalloy seed

Abstract

The application discloses a high-temperature alloy seed crystal cutting method, which comprises the following steps: firstly, a single crystal test plate with a near [001] orientation under space operation conditions is prepared; according to the position of a specific orientation point of a seed crystal to be prepared in a inverse pole figure, the direction angle θ and the φ angle of the orientation are calculated, and the θ and the φ are converted into corresponding angles in the Laue method by a formula; after the [001] direction is calibrated by a diffractometer and a three-axis rotating tool, the seed crystal with the specific orientation in the inverse pole figure is cut by using the calculated angles. The method adopts the single crystal plate with preparation conditions, utilizes a tool capable of rotating in three directions, realizes the cutting of the seed crystal with any orientation in the inverse pole figure, and simultaneously corresponds the rotating angles in the single crystal cutting to the angles in the existing general standard, namely, the Laue method for measuring crystal orientation, so that the seed crystal with any orientation in the inverse pole figure can be quickly and conveniently cut.

Description

Technical Field

[0001] This invention belongs to the field of casting single-crystal high-temperature alloy technology, and particularly relates to a method for cutting high-temperature alloy seed crystals. Background Technology

[0002] Nickel-based single-crystal superalloys are widely used in hot-end components of aero-engines and gas turbines due to their excellent high-temperature mechanical properties. Since single-crystal components lack grain boundaries, they consist of only a single grain. The mechanical properties of single-crystal superalloys exhibit significant anisotropy, including elastic anisotropy and yield anisotropy. Industrially used single-crystal blades have an axial orientation close to

[001] , but considering the complex geometry and internal structure of the blades, the stress state during service is often very complex, and the material orientation under localized stress often varies greatly. Furthermore, temperature differences in different regions of the blade during service can also lead to localized thermal stress acting on different material orientations. Therefore, studying the mechanical properties of single-crystal superalloys with different orientations is crucial for evaluating the service condition of blades.

[0003] Studies have shown that alloy CMSX-4 exhibits significant creep anisotropy at 950℃, with creep life decreasing sequentially from

[111] ,

[001] , to

[011] . The elastic modulus of alloy DD6 gradually increases from

[001] ,

[011] to

[111] . Conventional experiments only study the properties of specific orientations, such as

[001] ,

[011] , and

[111] orientations. However, in reality, the mechanical properties of single-crystal superalloys show significant differences with even small changes in orientation. One study plotted the creep life of MARM200 single-crystal superalloy at 760℃ in an inverse pole figure, finding that the creep life of the single crystal is closely related to the material's orientation position in the inverse pole figure. Samples with an orientation 10° away from

[001] in the inverse pole figure showed significant differences in creep life. The standard for controlling the orientation of single-crystal blades is usually that the orientation of the blade axis deviates from

[001] by less than 15°. Without requirements on the blade orientation position in the inverse pole figure, blades with orientation deviations less than 15° may exhibit significantly different creep performance. Therefore, a method is needed to precisely control the orientation position of single-crystal blades in the inverse pole figure. This can be achieved by growing blades that meet the requirements using a seed crystal method. The most crucial step is how to accurately cut seed crystals of various orientations in the inverse pole figure.

[0004] The invention disclosed in CN104846441A is a method for cutting and preparing nickel-based single-crystal alloy seed crystals for casting. It proposes that seed crystals with specific orientations of

[001] ,

[011] and

[111] can be cut by combining an X-ray stress measuring instrument. However, it does not propose a specific method for cutting seed crystals with arbitrary crystal orientations.

[0005] The invention disclosed in CN113232176B is a seed crystal cutting device and method for casting single crystal high-temperature alloys with different crystal orientations. It proposes to use different angles in an X-ray diffractometer to cut seed crystals with specific orientations of

[001] ,

[011] and

[111] through specific tooling, but does not propose a cutting method for cutting seed crystals with specific orientations in the inverse pole figure.

[0006] The invention disclosed in CN 114622270 A is a method for preparing single-crystal high-temperature alloy test bars. It proposes to use

[001] oriented seed crystals and use simple tooling to complete the preparation of test bars with arbitrary orientations such as

[011] and

[111] . However, it does not propose a cutting method for cutting specific orientation seed crystals in the inverse pole figure. Summary of the Invention

[0007] Therefore, the main objective of this invention is to provide a method for cutting high-temperature alloy seed crystals, which aims to achieve precise cutting of seed crystals with arbitrary orientations by utilizing inverse pole figures.

[0008] Therefore, the high-temperature alloy seed crystal cutting method provided by this invention first prepares a near-

[001] oriented single crystal test plate with spatial operation conditions. Based on the position of the specific orientation point of the seed crystal to be prepared in the inverse pole figure, the orientation angles θ and φ are calculated. Then, θ and φ are used to... The angle is converted to the corresponding angle in the Laue method and then, after the precise

[001] direction is calibrated using a diffractometer and a three-axis rotating fixture, the seed crystal with a specific orientation in the inverse pole figure is cut using the calculated angle; among which,

[0009] θ = 45h / a°, where a is the distance between point

[001] and point

[011] in the inverse polar diagram, and h is the distance between a specific orientation point and point

[001] in the inverse polar diagram; α is the angle between the line connecting a specific orientation in the inverse pole figure and

[001] and the line connecting

[001] and

[011] .

[0010] This invention employs a single-crystal test plate with specific preparation conditions and utilizes a tooling that can rotate in three directions to cut seed crystals of arbitrary orientation in the inverse pole figure. Simultaneously, the rotation angle during single-crystal cutting corresponds to the angle in the existing general standard—"Laue Method for Determining Crystal Orientation." This allows for the rapid and convenient cutting of seed crystals of arbitrary orientation in the inverse pole figure. The method is simple to operate, low in cost, and produces seed crystals with high orientation accuracy, thereby improving the production efficiency of large batches of seed crystals with different orientations and contributing to the preparation of single-crystal blades with specific orientations.

[0011] Specifically, the steps include the following:

[0012] S1. A single-crystal test plate is prepared using the seed crystal method, wherein the length direction of the single-crystal test plate is deflected within 10° from the

[001] orientation, and the width direction of the single-crystal test plate is deflected from the

[100] orientation. horn;

[0013] S2. Mount the single crystal test plate on the three-axis rotating fixture, so that the length direction of the single crystal plate is parallel to the Z-axis of the three-axis rotating fixture, the thickness direction is parallel to the Y-axis of the three-axis rotating fixture, the width direction is parallel to the X-axis of the three-axis rotating fixture, and the direction of the diffractometer light source is parallel to the Z-axis of the three-axis rotating fixture.

[0014] S3. Then adjust the three-axis rotatable fixture so that the orientation of the single crystal test plate

[001] is consistent with the direction of the diffractometer light source, that is, parallel to the Z-axis of the three-axis rotatable fixture.

[0015] S4. Based on the position of the specific orientation point of the seed crystal to be prepared in the inverse pole figure, calculate the orientation angle θ and... number of angles;

[0016] S5. According to the conversion formulas (1) and (2), convert θ and θ obtained in step S4 into the following values. Converted to angles in an X-ray diffractometer, where:

[0017]

[0018]

[0019] Then, rotate the single crystal test plate around the X-axis of the fixture by an angle γ in sequence, and then rotate it around the Y-axis of the fixture by an angle δ.

[0020] S6. Then, the single crystal sample plate is cut perpendicular to the direction of the diffractometer light source to form a cutting plane;

[0021] S7. Place the cut single crystal test plate on the wire cutting workbench, ensuring that the molybdenum wire of the wire cutting is perpendicular to the cutting plane formed by cutting the single crystal test plate in step S6, and cut out the seed crystal of the required size.

[0022] S8. Polish the cross-section of the cut seed crystal and test and confirm the accuracy of the orientation.

[0023] Specifically, in step S6, after marking the single crystal test plate with a line parallel to the direction of the diffractometer light source, the single crystal test plate is cut using wire cutting, wherein the wire cutting direction is perpendicular to the marking line.

[0024] Compared with the prior art, the present invention has the following advantages: using a single crystal test plate with preparation conditions and a tooling that can rotate in three directions, the seed crystals of arbitrary orientation in the inverse pole figure can be cut. At the same time, the rotation angle during single crystal cutting corresponds to the angle in the existing general standard - "Loue Method for Determining Crystal Orientation", which can quickly and conveniently cut seed crystals of arbitrary orientation in the inverse pole figure.

[0025] This method is simple to operate, low in cost, and produces seed crystals with high orientation accuracy. It can improve the production efficiency of large batches of seed crystals with different orientations and is helpful for the preparation of single crystal blades with specific orientations. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 It is the direction angle (θ and) of any orientation in space. ) Schematic diagram;

[0028] Figure 2 This is a schematic diagram illustrating the variables used to calculate the spatial orientation angle at the orientation point in the inverse pole figure;

[0029] Figure 3 It is the direction angle. A schematic diagram showing the width of the single-crystal test plate;

[0030] Figure 4 This is a schematic diagram of calibrating a specific orientation using a triaxial rotary fixture and an X-ray diffractometer.

[0031] Figure 5 This is a schematic diagram of cutting a seed crystal from a single-crystal test plate;

[0032] Figure 6 This is a schematic diagram of the orientation distribution of the four orientation seed crystals in the inverse pole figure prepared using this method. Detailed Implementation

[0033] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] See Figure 1A method for cutting high-temperature alloy seed crystals involves first preparing a near-

[001] oriented single-crystal test plate (single-crystal plate) with spatial operation conditions. Based on the position of the specific orientation point of the seed crystal to be prepared in the inverse pole figure, the orientation angles θ and φ are calculated. Then, θ and φ are used to... The angle is converted into the corresponding angle in the Laue method and then the precise

[001] direction is determined using a diffractometer and a three-axis rotating fixture. The seed crystal with a specific orientation in the inverse pole figure is then cut using the calculated angle.

[0035] This invention employs a single-crystal test plate with specific preparation conditions and utilizes a three-axis rotatable fixture to cut seed crystals of arbitrary orientation in an inverse pole figure. The rotation angle during single-crystal cutting corresponds to the angles in the existing universal standard—"Laué Method for Determining Crystal Orientation." This allows for the rapid and convenient cutting of seed crystals of arbitrary orientation in the inverse pole figure. The method is simple to operate, low in cost, and provides high orientation accuracy for the prepared seed crystals, improving the production efficiency of large batches of seed crystals with different orientations and contributing to the preparation of single-crystal blades with specific orientations. The specific structure of the three-axis rotating fixture is existing technology and will not be described in detail here.

[0036] according to Figure 2 As shown in the schematic diagram, in the inverse polar diagram, the distance from point

[001] to point

[011] is known to be a. The distance h between a specific orientation point and point

[001] in the inverse polar diagram is measured, then θ = 45h / a°; the angle α between the line connecting the specific orientation point and

[001] and the line connecting

[001] and

[011] is measured, then...

[0037] Specifically, the above-mentioned high-temperature alloy seed crystal cutting method includes the following steps:

[0038] Single-crystal test plates were prepared using the seed crystal method. The length direction of the single-crystal test plate was deflected within 10° from

[001] , and the width direction of the single-crystal test plate was deflected from the

[100] orientation. horn;

[0039] See Figure 3 On the cross-section of the prepared single-crystal test plate, secondary dendrites can be observed to form a cross shape, with the cross directions pointing towards the

[100] and

[010] crystal orientations, respectively. To cut a seed crystal that meets the requirements and considering the thickness of the single-crystal test plate itself, the angle between one of the secondary dendrite directions and the width direction of the single-crystal test plate should be approximately [missing information]. Its angular deviation depends on the thickness of the single crystal plate and the length of the seed crystal.

[0040] The single crystal sample is mounted on a triaxial rotating fixture, with the length of the sample parallel to the Z-axis, the thickness parallel to the Y-axis, and the width parallel to the X-axis. The diffractometer light source is parallel to the Z-axis of the triaxial rotating fixture.Figure 4 );

[0041] Then, the triaxial rotatable fixture was adjusted so that the orientation of the single crystal test plate

[001] was consistent with the direction of the diffractometer light source, that is, parallel to the Z-axis of the triaxial rotatable fixture, so as to achieve accurate determination of the orientation of the cross section of the single crystal plate.

[0042] Based on the position of the specific orientation point of the seed crystal to be prepared in the inverse pole figure, the orientation angle θ and θ of that orientation are calculated. number of angles;

[0043] According to formulas (1) and (2), the θ and θ obtained in the fourth step are... Converted to angles γ and δ in a diffractometer, and sequentially wound around the fixture ( Figure 4 The X-axis is rotated by an angle γ, and the Y-axis is rotated by an angle δ around the tooling.

[0044] Then, the single crystal sample plate was cut perpendicular to the direction of the diffractometer light source to form a cutting plane;

[0045] Place the cut single-crystal test plate on the wire EDM worktable, ensuring that the molybdenum wire used in the wire EDM is perpendicular to the cutting plane formed by cutting the single-crystal test plate in step S6, and cut out a seed crystal of the required size, such as... Figure 5 As shown;

[0046] The cross-section of the cut seed crystal is polished, and the accuracy of the orientation is tested and confirmed.

[0047] Understandably, in order to facilitate finding the correct cutting direction during cutting, in step S6, after making a marking line parallel to the direction of the diffractometer light source on the single crystal test plate, the single crystal test plate is cut using wire cutting, wherein the wire cutting wire direction is perpendicular to the marking line.

[0048] Example 1

[0049] according to Figure 2 As shown in the schematic diagram, in the inverse polar diagram, the distance from point

[001] to point

[011] is known to be a. The distance h between a specific orientation point and point

[001] in the inverse polar diagram is measured, then θ = 45h / a°; the angle α between the line connecting the specific orientation point and

[001] and the line connecting

[001] and

[011] is measured, then... In this example, θ = 7.36°. ( Figure 6 Example 1).

[0050] A single crystal test plate was prepared by using the seed crystal method. The length direction of the test plate was deflected by less than 10° from

[001] and the

[100] orientation was deflected by about 20° from the width direction of the single crystal plate.

[0051] The single crystal sample is mounted on a triaxial rotating fixture, ensuring that the length of the single crystal sample is parallel to the direction of the diffractometer light source, the thickness direction is parallel to the Y-axis of the triaxial rotating fixture, and the direction of the diffractometer light source is parallel to the Z-axis of the triaxial rotating fixture. Figure 4 ).

[0052] Adjust the three-axis rotatable fixture so that the orientation (growth direction) of the single crystal plate

[001] is consistent with the direction of the diffractometer light source, that is, parallel to the Z-axis of the three-axis rotatable fixture, so as to accurately determine the orientation of the cross section of the single crystal plate.

[0053] According to formulas (1) and (2), the θ and θ obtained in the fourth step are... Convert these to angles γ and δ in a diffractometer, where γ = 6.8° and δ = 2.8°, and sequentially rotate them around the fixture ( Figure 4 The X-axis of the fixture is rotated clockwise by an angle γ, and then rotated clockwise by an angle δ around the Y-axis of the fixture.

[0054] Then, marking lines parallel to the direction of the diffractometer light source were made on the single crystal test plate, and the single crystal test plate was cut using wire cutting, wherein the wire cutting direction was perpendicular to the marking lines.

[0055] Place the cut single crystal test plate on the wire cutting worktable, ensuring that the molybdenum wire of the wire cutting is perpendicular to the cutting plane formed by cutting the single crystal test plate in step S6, and cut out the seed crystal of the required size. Figure 5 ).

[0056] The cut seed crystal cross-section is ground to a mirror finish, and a diffractometer is used to determine whether the orientation of the seed crystal meets the requirements.

[0057] Example 2

[0058] according to Figure 2 As shown in the schematic diagram, in the inverse polar diagram, the distance from point

[001] to point

[011] is known to be a. The distance h between a specific orientation point and point

[001] in the inverse polar diagram is measured, then θ = 45h / a°; the angle α between the line connecting the specific orientation point and

[001] and the line connecting

[001] and

[011] is measured, then... In this example, θ = 41.5°. ( Figure 6 Example 2).

[0059] A single crystal test plate was prepared by using the seed crystal method. The length direction of the test plate was deflected by less than 10° from

[001] and the

[100] orientation was deflected by about 10° from the width direction of the single crystal plate.

[0060] The single crystal sample is mounted on a triaxial rotating fixture, ensuring that the length of the single crystal sample is parallel to the direction of the diffractometer light source, the thickness direction is parallel to the Y-axis of the triaxial rotating fixture, and the direction of the diffractometer light source is parallel to the Z-axis of the triaxial rotating fixture. Figure 4 ).

[0061] Adjust the three-axis rotatable fixture so that the orientation (growth direction) of the single crystal plate

[001] is consistent with the direction of the diffractometer light source, that is, parallel to the Z-axis of the three-axis rotatable fixture, so as to accurately determine the orientation of the cross section of the single crystal plate.

[0062] According to formulas (1) and (2), the θ and θ obtained in the first step are... Converted to angles γ and δ in a diffractometer, where γ = 41.2° and δ = 5.8°, and sequentially wound around the fixture ( Figure 4 The X-axis of the fixture is rotated clockwise by an angle γ, and then rotated clockwise by an angle δ around the Y-axis of the fixture.

[0063] Then, marking lines parallel to the direction of the diffractometer light source were made on the single crystal test plate, and the single crystal test plate was cut using wire cutting, wherein the wire cutting direction was perpendicular to the marking lines.

[0064] Place the cut single crystal test plate on the wire cutting worktable, ensuring that the molybdenum wire of the wire cutting is perpendicular to the cutting plane formed by cutting the single crystal test plate in step S6, and cut out the seed crystal of the required size. Figure 5 ).

[0065] The cut seed crystal cross-section is ground to a mirror finish, and a diffractometer is used to determine whether the orientation of the seed crystal meets the requirements.

[0066] Example 3

[0067] according to Figure 2 As shown in the schematic diagram, in the inverse polar diagram, the distance from point

[001] to point

[011] is known to be a. The distance h between a specific orientation point and point

[001] in the inverse polar diagram is measured, then θ = 45h / a°; the angle α between the line connecting the specific orientation point and

[001] and the line connecting

[001] and

[011] is measured, then... In this example, θ = 34.7°. ( Figure 6 Example 3).

[0068] A single crystal test plate was prepared by using the seed crystal method. The length direction of the test plate was deflected by less than 10° from

[001] and the

[100] orientation was deflected by about 40° from the width direction of the single crystal plate.

[0069] The single crystal sample is mounted on a triaxial rotating fixture, ensuring that the length of the single crystal sample is parallel to the direction of the diffractometer light source, the thickness direction is parallel to the Y-axis of the triaxial rotating fixture, and the direction of the diffractometer light source is parallel to the Z-axis of the triaxial rotating fixture. Figure 4 ).

[0070] Adjust the three-axis rotatable fixture so that the orientation (growth direction) of the single crystal plate

[001] is consistent with the direction of the diffractometer light source, that is, parallel to the Z-axis of the three-axis rotatable fixture, so as to accurately determine the orientation of the cross section of the single crystal plate.

[0071] According to formulas (1) and (2), the θ and θ obtained in the first step are... Converted to angles γ and δ in a diffractometer, where γ = 27.6° and δ = 21.9°, and sequentially wound around the fixture ( Figure 4 The X-axis of the fixture is rotated clockwise by an angle γ, and then rotated clockwise by an angle δ around the Y-axis of the fixture.

[0072] Then, marking lines parallel to the direction of the diffractometer light source were made on the single crystal test plate, and the single crystal test plate was cut using wire cutting, wherein the wire cutting direction was perpendicular to the marking lines.

[0073] Place the cut single crystal test plate on the wire cutting worktable, ensuring that the molybdenum wire of the wire cutting is perpendicular to the cutting plane formed by cutting the single crystal test plate in step S6, and cut out the seed crystal of the required size. Figure 5 ).

[0074] The cut seed crystal cross-section is ground to a mirror finish, and a diffractometer is used to determine whether the orientation of the seed crystal meets the requirements.

[0075] Example 4

[0076] according to Figure 2 As shown in the schematic diagram, in the inverse polar diagram, the distance from point

[001] to point

[011] is known to be a. The distance h between a specific orientation point and point

[001] in the inverse polar diagram is measured, then θ = 45h / a°; the angle α between the line connecting the specific orientation point and

[001] and the line connecting

[001] and

[011] is measured, then... In this example, θ = 52.1°. ( Figure 6 Example 4).

[0077] A single-crystal test plate was prepared by using the seed crystal method. The length direction of the test plate was deflected by less than 10° from

[001] and the

[100] orientation was deflected by about 42° from the width direction of the single crystal plate.

[0078] The single crystal sample is mounted on a triaxial rotating fixture, ensuring that the length of the single crystal sample is parallel to the direction of the diffractometer light source, the thickness direction is parallel to the Y-axis of the triaxial rotating fixture, and the direction of the diffractometer light source is parallel to the Z-axis of the triaxial rotating fixture. Figure 4 ).

[0079] Adjust the three-axis rotatable fixture so that the orientation (growth direction) of the single crystal plate

[001] is consistent with the direction of the diffractometer light source, that is, parallel to the Z-axis of the three-axis rotatable fixture, so as to accurately determine the orientation of the cross section of the single crystal plate.

[0080] According to formulas (1) and (2), the θ and θ obtained in the first step are... Converted to angles γ and δ in a diffractometer, where γ = 42.9° and δ = 32.9°, and sequentially wound around the fixture ( Figure 4 The X-axis of the fixture is rotated clockwise by an angle γ, and then rotated clockwise by an angle δ around the Y-axis of the fixture.

[0081] Then, marking lines parallel to the direction of the diffractometer light source were made on the single crystal test plate, and the single crystal test plate was cut using wire cutting, wherein the wire cutting direction was perpendicular to the marking lines.

[0082] Place the cut single crystal test plate on the wire cutting worktable, ensuring that the molybdenum wire of the wire cutting is perpendicular to the cutting plane formed by cutting the single crystal test plate in step S6, and cut out the seed crystal of the required size. Figure 5 ).

[0083] The cut seed crystal cross-section is ground to a mirror finish, and a diffractometer is used to determine whether the orientation of the seed crystal meets the requirements.

[0084] The above embodiments are merely illustrative examples to clearly illustrate the present invention and are not intended to limit the implementation. Those skilled in the art will recognize that other variations or modifications can be made based on the above description. It is neither necessary nor possible to exhaustively list all embodiments here. However, obvious variations or modifications derived therefrom are still within the scope of protection of this invention.

Claims

1. A method of cutting a seed crystal of a high temperature alloy, characterized by: First, a single crystal test plate with a near [001] orientation of space operating conditions is prepared, according to the location of the specific orientation point of the seed crystal to be prepared in the inverse pole figure, the direction angle θ and the φ angle of the orientation are calculated, and the θ and φ are converted into the corresponding angles in the Laue method by formula, after the accurate [001] orientation is calibrated by the diffractometer and the three-axis rotating tool, the seed crystal with specific orientation in the inverse pole figure is cut by using the calculated angles; wherein, θ = 45h / a °, a is the distance from the point [001] to the point [011] in the inverse pole figure, h is the distance from the specific orientation point to the point [001] in the inverse pole figure; φ = α, α is the included angle between the line connecting the specific orientation point and the point [001] and the line connecting the point [001] and the point [011] in the inverse pole figure; Specifically includes the following steps: S1, a single crystal test plate is prepared by using the seed crystal method, wherein the length direction of the single crystal test plate is within 10° deviated from the [001] orientation, and the width direction of the single crystal test plate is deviated from the [100] orientation by the φ angle; S2, the single crystal test plate is installed on the three-axis rotating tool, so that the length direction of the single crystal plate is parallel to the Z axis of the three-axis rotatable tool, the thickness direction is parallel to the Y axis of the three-axis rotating tool, and the light source direction of the diffractometer is parallel to the Z axis of the three-axis rotatable tool; S3, then adjust the three-axis rotatable tool, so that the [001] orientation of the single crystal test plate is consistent with the light source direction of the diffractometer, that is, parallel to the Z axis of the three-axis rotatable tool; S4, according to the location of the specific orientation point of the seed crystal to be prepared in the inverse pole figure, the direction angle θ and the φ angle of the orientation are calculated; S5, according to the conversion formula (1) and (2), the θ and φ measured in step S4 are converted into the angles in the X-ray diffractometer, wherein: γ = arctan(tanθ*cosφ) (1) δ = arcsin(sinθ*sinφ) (2) And in order, the single crystal test plate is rotated by γ angle around the X axis of the tool, and then rotated by δ angle around the Y axis of the tool; S6, then cut the single crystal test plate perpendicular to the light source direction of the diffractometer to form a cutting plane; S7, place the cut single crystal test plate on the wire cutting workbench, ensure that the wire cutting molybdenum wire is perpendicular to the cutting plane, and cut the seed crystal with the required size; S8, polish the cross section of the cut seed crystal, test and confirm the accuracy of the orientation.

2. The high temperature alloy seed cutting method of claim 1, wherein: After marking lines parallel to the light source direction of the diffractometer are made on the single crystal test plate in step S6, the single crystal test plate is cut by using the wire cutting, wherein the wire cutting wire direction is perpendicular to the marking line.

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