A method and device for etching a zigzag silicon nanostructure

Abstract

The present application belongs to the field of micro-nanostructure technology, and in particular relates to an etching processing method and device for a tortuous silicon nanostructure; the etching processing device for a tortuous silicon nanostructure provided by the present application utilizes a control system to control an inlet peristaltic pump to input the etching solution in a component addition container into the etching container to etch a silicon substrate, and by controlling the pump speeds of the inlet peristaltic pump and the outlet peristaltic pump, stepless adjustment of different etching solutions is achieved, and the component concentration adjustment accuracy of the etching solution is high, thereby improving the etching accuracy of the tortuous silicon nanostructure, and can solve the technical problem of low etching accuracy of the tortuous silicon nanostructure in the prior art.

Description

Technical Field

[0001] The present application belongs to the field of micro-nanostructure technology, and in particular relates to an etching processing method and device for a zigzag silicon nanostructure. Background Art

[0002] Zigzag silicon nanostructures have many superior properties and have broad application prospects in microelectronic devices, microfluidic devices, sensors, etc.; currently, silicon nanostructures can be prepared through bottom-up and top-down methods.

[0003] The bottom-up approach includes using chemical vapor deposition, oxygen-assisted growth, solution method and other methods to grow neat and orderly silicon nanostructures with high aspect ratio on silicon substrates, but the growth efficiency is slow and it is easy to be contaminated. In the top-down etching method, dry etching is difficult to control the directional movement of etching gas, and it is difficult to generate silicon nanostructures with complex morphology. Unlike dry etching, the metal-assisted chemical etching method in the top-down etching method is a new wet etching method for etching micro-nano structures on silicon and III-V semiconductor materials. It has the advantages of simple process, low cost, high efficiency and no pollution. Its etching process includes The method involves covering a silicon substrate with a mask of precious metals such as Ag, Au, and Pt, and immersing the substrate in a hydrofluoric acid and hydrogen peroxide solution for wet etching. During the etching process, hydrogen peroxide oxidizes the silicon substrate into silicon dioxide under the catalysis of the precious metal, thereby causing the surface of the silicon substrate in contact with the precious metal mask to be etched by hydrofluoric acid. By controlling the initial morphology of the precious metal mask and removing the material by direction etching under its catalytic action, a large-area, highly oriented silicon nanostructure with a specific geometric morphology can be prepared. Therefore, by configuring etching solutions with multiple component concentrations and changing the etching solution during the etching process for multiple etchings, it can be used to process tortuous silicon nanostructures.

[0004] However, the currently prepared etching solution with limited component concentration cannot adjust the component concentration steplessly, has poor controllability, and cannot accurately control the etching direction of the tortuous silicon nanostructure. The etching accuracy of the prepared tortuous silicon nanostructure is not high. Summary of the Invention

[0005] In view of this, the present application provides a method and apparatus for etching a meandering silicon nanostructure, which are used to solve the technical problem of low etching accuracy of the meandering silicon nanostructure in the prior art.

[0006] In a first aspect, the present application provides an etching processing apparatus for a zigzag silicon nanostructure, comprising: a first component addition container, a first inlet peristaltic pump, a second component addition container, a second valve, a third component addition container, a third valve, a second inlet peristaltic pump, an etching container, an outlet peristaltic pump, and a control system;

[0007] The inlet of the first component adding container is connected to the inlet of the first inlet peristaltic pump, and is used to input the etching solution in the first component adding container;

[0008] The inlet of the second inlet peristaltic pump is connected to the second component adding container through the second valve, and is used to input the etching solution in the second component adding container;

[0009] The inlet of the second inlet peristaltic pump is connected to the second component adding container through the third valve, and is used to input the etching solution in the third component adding container;

[0010] The inlet of the etching container is connected to the outlet of the first inlet peristaltic pump and the outlet of the second inlet peristaltic pump, and is used for etching using the etching solutions in the first component addition container, the second component addition container, and the third component addition container;

[0011] The inlet of the outlet peristaltic pump is connected to the outlet of the etching container, and is used to output the etching solution in the etching container;

[0012] The control system is electrically connected to the first inlet peristaltic pump, the second inlet peristaltic pump and the outlet peristaltic pump, and is used to control the pump speeds of the first inlet peristaltic pump, the second inlet peristaltic pump and the outlet peristaltic pump.

[0013] Preferably, the zigzag silicon nanostructure etching processing device further comprises an outlet peristaltic pump output valve, an etching waste liquid storage container, and an outlet peristaltic pump circulation valve;

[0014] The outlet of the outlet peristaltic pump is connected to the etching waste liquid storage container through the outlet peristaltic pump output valve;

[0015] The outlet of the outlet peristaltic pump is connected to the inlet of the etching container through an outlet peristaltic pump circulation valve.

[0016] Preferably, the zigzag silicon nanostructure etching processing device further comprises a passive mixer, the inlet of the passive mixer is connected to the outlet of the first inlet peristaltic pump and the outlet of the second inlet peristaltic pump;

[0017] The outlet of the passive mixer is connected to the inlet of the etching container.

[0018] Preferably, in the zigzag silicon nanostructure etching processing device, the control system includes a system power supply, a drive system and an industrial control computer that are electrically connected to each other.

[0019] Preferably, the zigzag silicon nanostructure etching processing device further comprises a cleaning container, which is connected to the first inlet peristaltic pump and the second inlet peristaltic pump and is used for cleaning the zigzag silicon nanostructure etching processing device with deionized water.

[0020] Preferably, the second valve, the third valve, the outlet peristaltic pump output valve and the outlet peristaltic pump circulation valve are electromagnetically controlled valves;

[0021] The second valve, the third valve, the outlet peristaltic pump output valve and the outlet peristaltic pump circulation valve are electrically connected to the control system.

[0022] The second aspect of the present application provides a method for etching a meandering silicon nanostructure using the above-mentioned device, the method comprising the steps of:

[0023] Step S1, starting the first inlet peristaltic pump to input the first etching solution in the first component addition container into the etching container;

[0024] Step S2, etching the silicon substrate with the surface covered with the noble metal mask using a first etching solution in an etching container to obtain a silicon substrate having an etched straight line segment in a first crystal direction;

[0025] Step S3, starting the second inlet peristaltic pump to input the second etching solution in the second component addition container into the etching container;

[0026] Step S4, etching the silicon substrate with the surface covered with the noble metal mask using the first etching solution and the second etching solution in an etching container to obtain a silicon substrate with a gradually bent section;

[0027] Step S5, continue to input the second etching solution in the second component addition container into the etching container, and use the second etching solution to etch the silicon substrate with the surface covered with the noble metal mask in the etching container to obtain a silicon substrate having an etched straight line segment in the second crystal direction;

[0028] Step S6, starting the third inlet peristaltic pump to input the third etching solution in the third component addition container into the etching container;

[0029] Step S7, etching the silicon substrate with the surface covered with the noble metal mask using the second etching solution and the third etching solution in the etching container to obtain a silicon substrate with a gradually bent section;

[0030] Step S8: continue to input the third etching solution in the third component addition container into the etching container, and use the third etching solution to etch the silicon substrate with the surface covered with the noble metal mask in the etching container to obtain a silicon substrate with a third crystal direction etched straight segment.

[0031] Preferably, after step S8, steps S9 to S15 are further included:

[0032] Step S9, starting the second inlet peristaltic pump to input the second etching solution in the second component addition container into the etching container;

[0033] Step S10: etching the silicon substrate having the surface covered with the noble metal mask using the third etching solution and the second etching solution in an etching container to obtain a silicon substrate having a gradually bent section;

[0034] Step S11, continue to input the second etching solution in the second component addition container into the etching container, and use the second etching solution to etch the silicon substrate covered with the noble metal mask in the etching container to obtain a silicon substrate having a second crystal direction etched straight line segment;

[0035] Step S12: starting the first inlet peristaltic pump to input the first etching solution in the first component addition container into the etching container;

[0036] Step S13, etching the silicon substrate with the surface covered with the noble metal mask using the second etching solution and the first etching solution in an etching container to obtain a silicon substrate with a gradually bent section;

[0037] Step S14, continue to input the first etching solution in the first component addition container into the etching container, and use the first etching solution to etch the silicon substrate with the surface covered with the noble metal mask in the etching container to obtain a silicon substrate having a first crystal direction etched straight line segment;

[0038] Step S15: Repeat steps S1 to S14.

[0039] Preferably, after step S8, steps S81 to S84 are further included:

[0040] Step S81, starting the first inlet peristaltic pump to input the first etching solution in the first component addition container into the etching container;

[0041] Step S82: etching the silicon substrate with the surface covered with the noble metal mask using the third etching solution and the first etching solution in an etching container to obtain a silicon substrate with a gradually bent section;

[0042] Step S83, continue to input the first etching solution in the first component addition container into the etching container, and use the first etching solution to etch the silicon substrate covered with the noble metal mask in the etching container to obtain a silicon substrate having an etched straight line segment in the first crystal direction;

[0043] Step S84: Repeat steps S1 to S83.

[0044] Preferably, step S2, step S5 and step S8 include the steps of closing the outlet peristaltic pump output valve and opening the outlet peristaltic pump circulation valve.

[0045] Preferably, after step S8, the method further includes the step of washing with deionized water.

[0046] In summary, the present application provides a method and device for etching a tortuous silicon nanostructure. The present application provides a tortuous silicon nanostructure etching device comprising a component adding container, a valve, an inlet peristaltic pump, an etching container, an outlet peristaltic pump and a control system which are sequentially connected through a pipeline; wherein the component adding container comprises a first component adding container, a second component adding container and a third component adding container, the etching solutions stored in the first component adding container, the second component adding container and the third component adding container can be used to etch along three crystal directions of the silicon wafer, the inlet peristaltic pump comprises a first inlet peristaltic pump and a second inlet peristaltic pump, the first inlet peristaltic pump is connected to the first component adding container, and the outlet peristaltic pump is used to control the etching process. The etching solution stored in the first component addition container is input, and the second inlet peristaltic pump is connected to the second component addition container and the third component addition container respectively through the second valve and the third valve, and is used to input the etching solution stored in the second component addition container and the third component addition container. At the same time, the control system controls the pump speed of the inlet peristaltic pump and the outlet peristaltic pump; when processing a zigzag silicon nanostructure, the control system first controls the inlet peristaltic pump to input the first etching solution in the component addition container to the etching container, and the etching container uses the first etching solution to etch along the first crystal direction of the silicon substrate to obtain a first crystal direction etching straight segment; then controls the inlet peristaltic pump to input the second etching solution in the component addition container, and controls the outlet peristaltic pump to input the second etching solution in the component addition container. The output pump speed of the outlet peristaltic pump is made consistent with the input pump speed of the inlet peristaltic pump, so that the component concentration of the first etching solution in the etching container gradually decreases, and the etching container gradually changes to the second etching solution, thereby realizing stepless adjustment of the component concentrations of the first etching solution and the second etching solution. In the process of stepless adjustment of the component concentration, the etching container uses a mixed etching solution of the first etching solution and the second etching solution to gradually etch toward the second crystal direction of the silicon substrate to obtain a gradient bending segment. After the etching container gradually changes to the second etching solution, the etching container uses the first etching solution to etch along the second crystal direction of the silicon substrate to obtain a second crystal direction etching straight line segment; then the etching container is controlled to The inlet peristaltic pump inputs the third etching solution in the component addition container, and the output pump speed of the outlet peristaltic pump is controlled to be consistent with the input pump speed of the inlet peristaltic pump, thereby realizing stepless adjustment of the component concentrations of the second etching solution and the third etching solution, thereby obtaining etching of the bending section and etching of a straight line section in the third crystal direction; thereafter, the second etching solution can be input to obtain etching of the bending section and etching of a straight line section in the second crystal direction, and then the first etching solution can be input to obtain etching of the bending section and etching of a straight line section in the first crystal direction, and the lengths of the first, second, and third crystal direction etching straight lines are controlled by controlling the etching time, and the length of the etching of the bending section is controlled by controlling the mixed etching time of the first, second, or third etching solutions;Therefore, the device for etching a zigzag silicon nanostructure provided by the present application can control an inlet peristaltic pump through a control system to deliver etching solution from a component addition container into an etching container to etch a silicon substrate. Furthermore, by controlling the inlet and outlet peristaltic pumps, stepless adjustment of different etching solutions is achieved. The component concentrations of the etching solution can be adjusted with high precision, thereby improving the etching accuracy of the zigzag silicon nanostructure. This can address the technical problem of low etching accuracy of zigzag silicon nanostructures in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0048] Figure 1 A schematic structural diagram of the zigzag silicon nanostructure etching processing device provided in Example 1 of the present application;

[0049] Figure 2 A schematic diagram of the process flow of the zigzag silicon nanostructure etching method provided in Example 2 of the present application;

[0050] Figure 3 Schematic diagram of a zigzag silicon nanostructure obtained by etching the zigzag silicon nanostructure etching method provided in Example 2 of the present application;

[0051] 1 , a first inlet peristaltic pump 1 , a second inlet peristaltic pump 2 , an outlet peristaltic pump 3 , a passive mixer 4 , a first component adding container 5 , a second component adding container 6 , a second component adding container 7 , a waste liquid recovery container 8 , an etching container 9 , a pipeline 10 , a second valve 11 , a third valve 12 , an outlet peristaltic pump output valve 13 , an outlet peristaltic pump circulation valve 14 , a cleaning container 15 , a drive system 16 , an industrial computer 17 , a system power supply 18 , a silicon substrate 100 , a nanochannel 101 , and gold nanoparticles 102 . DETAILED DESCRIPTION

[0052] The present application provides a method and apparatus for etching a zigzag silicon nanostructure, which are used to solve the technical problem of low etching accuracy of the zigzag silicon nanostructure in the prior art.

[0053] The following will clearly and completely describe the technical solution of this application in conjunction with the accompanying drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of this application.

[0054] Example 1

[0055] In view of the current defect of low etching accuracy of meandering silicon nanostructures, Example 1 of the present application provides an etching processing device for meandering silicon nanostructures, the schematic diagram of the device is shown in FIG. Figure 1 As shown, it includes a first inlet peristaltic pump, a second inlet peristaltic pump, an outlet peristaltic pump, a passive mixer, a first component adding container, a second component adding container, a second component adding container, a waste liquid recovery container, an etching container, a pipeline, a second valve, a third valve, an outlet peristaltic pump output valve, an outlet peristaltic pump circulation valve, a cleaning container, a drive system, an industrial computer, and a system power supply. A silicon substrate is placed in the etching container, and the surface of the silicon substrate is covered with a precious metal mask. When the etching processing device for the tortuous silicon nanostructure is used for processing, the processed tortuous silicon nanostructure is as shown in FIG. Figure 3As shown, the control system first controls the pump speed of the outlet peristaltic pump to be zero, and then controls the inlet peristaltic pump to input the etching solution of the first component adding container into the etching container at a certain pump speed, and the etching solution in the etching container etches in the first crystal direction, and etches into the first crystal direction etching straight line segment 1; then the control system controls the pump speed of the outlet peristaltic pump to be consistent with the pump speed of the inlet peristaltic pump, and then controls the inlet peristaltic pump to input the etching solution of the second component adding container into the etching container at a certain pump speed, so that the etching direction of the etching solution in the etching container gradually changes to the second crystal direction, and etches into the first gradual bending segment 2, and the container to be etched When the etching solution in the etching container is replaced by the etching solution in the second component adding container, the second crystal direction etching straight line segment 3 is etched. Next, the inlet peristaltic pump is controlled to input the etching solutions in the first and third component adding containers into the etching container in sequence at a certain pump speed. The etching direction of the etching solution in the etching container gradually changes to the third crystal direction, and the second gradual bending segment 4 is etched. When the etching solution in the etching container is replaced by the etching solution in the third component adding container, the third crystal direction etching straight line segment 5 is etched. Then the inlet peristaltic pump is controlled to input the etching solution in the second component adding container into the etching container at a certain pump speed, so that the etching container The etching direction of the etching solution in the etching container gradually changes to the second crystal direction, and the third gradually changing bend segment 6 is etched. When the etching solution in the etching container is replaced by the etching solution in the second component adding container, the second crystal direction etching straight line segment 7 (straight line segment 3) is etched. Then, the inlet peristaltic pump is controlled to input the etching solution in the first component adding container into the etching container at a certain pump speed, so that the etching direction of the etching solution in the etching container gradually changes to the first crystal direction, and the fourth gradually changing bend segment 8 is etched. When the etching solution in the etching container is replaced by the etching solution in the first component adding container, the first crystal direction etching straight line segment 9 ( Straight line segment 1), and then repeating the above steps, a zigzag silicon nanostructure of any length can be etched on a large-sized silicon wafer; from the above content, it can be seen that the zigzag silicon nanostructure etching processing device provided in Example 1 controls the inlet peristaltic pump through the control system to input the etching solution in the component addition container into the etching container to etch the silicon substrate, and by controlling the inlet peristaltic pump and the outlet peristaltic pump, stepless adjustment of different etching solutions is achieved, and the component concentration of the etching solution is adjusted with high accuracy, thereby improving the etching accuracy of the zigzag silicon nanostructure, overcoming the current defect of low etching accuracy of the zigzag silicon nanostructure;

[0056] At the same time, after etching the third crystal direction etching straight line segment 5, the inlet peristaltic pump can be controlled to input the etching solution of the first component adding container into the etching container at a certain pump speed, so that the etching direction of the etching solution in the etching container gradually changes to the first crystal direction gradual bending segment. When the etching solution in the etching container is replaced by the etching solution of the first component adding container, the first crystal direction etching straight line segment is etched. Thereafter, the above steps are repeated to obtain a tortuous silicon nanostructure of any length on a large-size silicon wafer.

[0057] Example 2

[0058] To further illustrate the use of the etching processing device for the tortuous silicon nanostructure provided in Example 1 of the present application, Example 2 of the present application provides an etching processing method for the tortuous silicon nanostructure, wherein the device described in Example 1 is used to process the tortuous silicon nanostructure; the processing flow is as follows: Figure 2 As shown, the processing process includes steps 1-6.

[0059] Among them, step 1 includes: silicon wafer preparation: the silicon wafer is cleaned and dried, and then a noble metal mask is prepared on the surface of the silicon wafer; when the required nanostructure is a nanowire, a noble metal mesh mask can be formed by depositing a single layer of polystyrene (PS) beads and then evaporating titanium (Ti) and gold (Au) layers.

[0060] Step 2 includes preparing etching solutions corresponding to different etching angles, namely etching solutions A, B, and C, based on the etching trajectory of the target silicon nanostructure, and placing them in first component addition container 5, second component addition container 6, and third component addition container 7, respectively. These etching solutions can etch along different crystal orientations of the silicon wafer, forming corresponding etching paths.

[0061] Step 3 includes: placing the prepared silicon wafer in the center of the etching container; starting the inlet peristaltic pump 1, filling the etching container with etching solution A, closing the inlet peristaltic pump 1, and etching to obtain the first crystal direction etching straight line segment 1; during the etching, the outlet peristaltic pump 3 and valve 14 can be opened to allow the etching solution to form an internal circulation flow to increase the etching rate, and the etching length of the first crystal direction etching straight line segment 1 can be controlled by the etching time.

[0062] Step 4 includes: simultaneously starting the inlet peristaltic pump 1, the inlet peristaltic pump 2, the outlet peristaltic pump 3, the valve 11 and the valve 13, closing the valves 12 and 14, entering the component concentration adjustment mode and performing etching; by adjusting the flow rate and ratio of the inlet peristaltic pump 1 and the inlet peristaltic pump 2, the component in the etching container is slowly and gradually changed from the etching solution A to the etching solution B as needed, thereby causing a gradual change in the etching direction to form the gradual bending section 2 shown in the figure; during the etching process, the radius of the gradual bend is controlled by controlling the total time of the component concentration adjustment.

[0063] Step 5 includes: when the solution in the etching container is completely gradually converted into etching solution B, closing the inlet peristaltic pump 1, the inlet peristaltic pump 2 and the valve 13, opening the outlet peristaltic pump 3 and the valve 14, and performing etching to obtain the second crystal direction etching straight line segment 3.

[0064] Step 6 includes: closing valve 11, opening valve 12, and adjusting the flow rates and ratios of the inlet peristaltic pump 1 and the inlet peristaltic pump 2 so that the components in the etching container slowly change from etching solution B to etching solution C as needed, causing a gradual change in the etching direction to form the gradient bending section 4 shown in the figure.

[0065] Repeating steps 1-6 can extend the meandering silicon nanostructure on a large-scale silicon wafer.

[0066] Example 3

[0067] Example 3 of the present application provides an etching method for a meandering silicon nanostructure. The difference between the processing method and Example 2 is that after step 6, the method further includes steps 7 to 10. The processed meandering silicon nanostructure is as follows: Figure 3 shown.

[0068] Step 7 includes: when the solution in the etching container is completely gradually converted into etching solution C, closing the inlet peristaltic pump 2 and valve 13, opening the outlet peristaltic pump 3 and valve 14, and performing etching to obtain the third crystal direction etching straight line segment 5.

[0069] Step 8 includes: simultaneously starting the inlet peristaltic pump 2, the outlet peristaltic pump 3, the valve 11 and the valve 13, closing the valves 12 and 14, entering the component concentration adjustment mode and performing etching; by adjusting the flow rate and ratio of the inlet peristaltic pump 1 and the inlet peristaltic pump 2, the component in the etching container is slowly and gradually changed from the etching solution C to the etching solution B as needed, thereby causing a gradual change in the etching direction, forming the gradient bending section 6 shown in the figure.

[0070] Step 9 includes: when the solution in the etching container is completely gradually converted into etching solution B, closing the inlet peristaltic pump 2 and valve 13, opening the outlet peristaltic pump 3 and valve 14, and performing etching to obtain the second crystal direction etching straight line segment 7.

[0071] Step 9: Start the inlet peristaltic pump 1 and the outlet peristaltic pump 3, close the valve 14, and allow the component in the etching container to slowly change from etching solution B to etching solution A as needed, thereby causing a gradual change in the etching direction to form the gradual bend section 8 shown in the figure; during the etching process, the size of the gradual bend is controlled by controlling the total time of component concentration adjustment.

[0072] Step 10: When the solution in the etching container is completely and gradually changed into etching solution A, the outlet peristaltic pump 3 and valve 14 are opened to perform etching to obtain a first crystal direction etching straight line segment 9 .

[0073] Repeating steps 1-10 can extend the meandering silicon nanostructure on a large-scale silicon wafer.

[0074] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An etching processing device for a zigzag silicon nanostructure, characterized in that: include: A first component adding container, a first inlet peristaltic pump, a second component adding container, a second valve, a third component adding container, a third valve, a second inlet peristaltic pump, an etching container, an outlet peristaltic pump, and a control system; The inlet of the first component adding container is connected to the inlet of the first inlet peristaltic pump, and is used to input the etching solution in the first component adding container; The inlet of the second inlet peristaltic pump is connected to the second component adding container through the second valve, and is used to input the etching solution in the second component adding container; The inlet of the second inlet peristaltic pump is connected to the second component adding container through the third valve, and is used to input the etching solution in the third component adding container; The inlet of the etching container is connected to the outlet of the first inlet peristaltic pump and the outlet of the second inlet peristaltic pump, and is used for etching using the etching solutions in the first component addition container, the second component addition container, and the third component addition container; The inlet of the outlet peristaltic pump is connected to the outlet of the etching container, and is used to output the etching solution in the etching container; The control system is electrically connected to the first inlet peristaltic pump, the second inlet peristaltic pump and the outlet peristaltic pump, and is used to control the pump speeds of the first inlet peristaltic pump, the second inlet peristaltic pump and the outlet peristaltic pump.

2. The etching processing device for a meandering silicon nanostructure according to claim 1, characterized in that: The zigzag silicon nanostructure etching processing device further includes an outlet peristaltic pump output valve, an etching waste liquid storage container, and an outlet peristaltic pump circulation valve; The outlet of the outlet peristaltic pump is connected to the etching waste liquid storage container through the outlet peristaltic pump output valve; The outlet of the outlet peristaltic pump is connected to the inlet of the etching container through an outlet peristaltic pump circulation valve.

3. The etching processing device for a meandering silicon nanostructure according to claim 1, characterized in that: The zigzag silicon nanostructure etching processing device further includes a passive mixer, wherein the inlet of the passive mixer is connected to the outlet of the first inlet peristaltic pump and the outlet of the second inlet peristaltic pump; The outlet of the passive mixer is connected to the inlet of the etching container.

4. The etching processing device for a meandering silicon nanostructure according to claim 1, characterized in that: In the zigzag silicon nanostructure etching processing device, the control system includes a system power supply, a drive system and an industrial control computer that are electrically connected to each other.

5. The etching processing device for a meandering silicon nanostructure according to claim 1, characterized in that: The zigzag silicon nanostructure etching processing device further includes a cleaning container, which is connected to the first inlet peristaltic pump and the second inlet peristaltic pump and is used to clean the zigzag silicon nanostructure etching processing device with deionized water.

6. The etching processing device for a meandering silicon nanostructure according to claim 1, characterized in that: The second valve, the third valve, the outlet peristaltic pump output valve and the outlet peristaltic pump circulation valve are electromagnetically controlled valves.

7. A method for etching a zigzag silicon nanostructure using the etching apparatus according to any one of claims 1 to 6, characterized in that: Including steps: Step S1, starting the first inlet peristaltic pump to input the first etching solution in the first component addition container into the etching container; Step S2, etching the silicon substrate with the surface covered with the noble metal mask using a first etching solution in an etching container to obtain a silicon substrate having an etched straight line segment in a first crystal direction; Step S3, starting the second inlet peristaltic pump to input the second etching solution in the second component addition container into the etching container; Step S4, etching the silicon substrate with the surface covered with the noble metal mask using the first etching solution and the second etching solution in an etching container to obtain a silicon substrate with a gradually bent section; Step S5, continue to input the second etching solution in the second component addition container into the etching container, and use the second etching solution to etch the silicon substrate with the surface covered with the noble metal mask in the etching container to obtain a silicon substrate having an etched straight line segment in the second crystal direction; Step S6, starting the third inlet peristaltic pump to input the third etching solution in the third component addition container into the etching container; Step S7, etching the silicon substrate with the surface covered with the noble metal mask using the second etching solution and the third etching solution in the etching container to obtain a silicon substrate with a gradually bent section; Step S8, continue to input the third etching solution in the third component addition container into the etching container, and use the third etching solution to etch the silicon substrate with the surface covered with the noble metal mask in the etching container to obtain a silicon substrate with a third crystal direction etched straight segment.

8. The etching method for a meandering silicon nanostructure according to claim 7, characterized in that: After step S8, steps S9 to S15 are also included: Step S9, starting the second inlet peristaltic pump to input the second etching solution in the second component addition container into the etching container; Step S10: etching the silicon substrate having the surface covered with the noble metal mask using the third etching solution and the second etching solution in an etching container to obtain a silicon substrate having a gradually bent section; Step S11, continue to input the second etching solution in the second component addition container into the etching container, and use the second etching solution to etch the silicon substrate covered with the noble metal mask in the etching container to obtain a silicon substrate having a second crystal direction etched straight line segment; Step S12: starting the first inlet peristaltic pump to input the first etching solution in the first component addition container into the etching container; Step S13, etching the silicon substrate with the surface covered with the noble metal mask using the second etching solution and the first etching solution in an etching container to obtain a silicon substrate with a gradually bent section; Step S14, continue to input the first etching solution in the first component addition container into the etching container, and use the first etching solution to etch the silicon substrate with the surface covered with the noble metal mask in the etching container to obtain a silicon substrate having a first crystal direction etched straight line segment; Step S15: Repeat steps S1 to S14.

9. The etching method for a meandering silicon nanostructure according to claim 7, characterized in that: After step S8, steps S81 to S84 are also included: Step S81, starting the first inlet peristaltic pump to input the first etching solution in the first component addition container into the etching container; Step S82: etching the silicon substrate with the surface covered with the noble metal mask using the third etching solution and the first etching solution in an etching container to obtain a silicon substrate with a gradually bent section; Step S83, continue to input the first etching solution in the first component addition container into the etching container, and use the first etching solution to etch the silicon substrate covered with the noble metal mask in the etching container to obtain a silicon substrate having an etched straight line segment in the first crystal direction; Step S84: Repeat steps S1 to S83.

10. The etching method for a meandering silicon nanostructure according to claim 7, characterized in that: Step S2, step S5 and step S8 also include the steps of closing the outlet peristaltic pump output valve and opening the outlet peristaltic pump circulation valve.

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