Cutting and cleaning apparatus and method for single crystal silicon wafers

Abstract

This invention discloses a cutting and cleaning apparatus and method for monocrystalline silicon wafers, comprising: a support frame and a processing box disposed on the support frame; a mounting frame connected to the top of the processing box, and a screw conveying assembly disposed at the top of the mounting frame for intermittent conveying of monocrystalline silicon rods; a multi-wire cutting assembly disposed at the front end of the mounting frame for equidistantly cutting the monocrystalline silicon rods to form a plurality of monocrystalline silicon wafers; and a cleaning box connected to the top of the processing box, wherein a receiving step assembly is disposed inside the cleaning box. This invention, through the arrangement of the multi-wire cutting assembly, utilizes the formed parallel cutting lines to perform multi-segment equidistant cutting of the monocrystalline silicon rod, thereby forming multiple monocrystalline silicon wafers in a single cutting operation. This design greatly improves work efficiency while ensuring the cutting quality of the monocrystalline silicon wafers.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of single crystal silicon wafer processing, in particular to a cutting and cleaning device and method for single crystal silicon wafer. BACKGROUND

[0002] As an important new type of semiconductor material, single crystal silicon has been widely used in various fields, especially in photovoltaic power generation and electronic information fields, and plays an important role in solar power generation and integrated circuits. Single crystal silicon is a hard and brittle material with high hardness and great brittleness, poor material cutting performance, and high part processing requirements, thus being limited in the processing process.

[0003] Wire cutting process is one of the important processing procedures for large-diameter semiconductor single crystal silicon rods, and the slicing quality and efficiency of the wire cutting process directly affect the slicing yield and market supply.

[0004] Considering the cutting thickness of the single crystal silicon wafer, a feed type cutting is generally adopted. Since the single crystal silicon wafer is thin, the feeding needs to be accurately controlled each time to ensure successful wafering. Therefore, it is an urgent problem to be solved how to improve the slicing efficiency while ensuring the slicing yield. SUMMARY

[0005] The present application aims to provide a cutting and cleaning device and method for single crystal silicon wafer, which can cut the single crystal silicon rod into multiple segments with equal intervals by using the formed parallel cutting lines, and form multiple single crystal silicon wafers after one cutting. This design greatly improves the work efficiency and ensures the cutting quality of the single crystal silicon wafer.

[0006] To achieve the above-mentioned purpose, the present application provides the following technical scheme: a cutting and cleaning device for single crystal silicon wafer, comprising:

[0007] a support frame and a treatment box arranged on the support frame;

[0008] The treatment box is connected with a mounting frame at the top, and a screw rod conveying assembly is arranged at the top of the mounting frame for intermittent conveying of the single crystal silicon rod.

[0009] A multi-wire cutting assembly is arranged at the front end of the mounting frame for equidistant slitting of the single crystal silicon rod and forming a plurality of single crystal silicon wafers.

[0010] The cutting and cleaning device further comprises a cleaning box communicated with the top of the treatment box and a water inlet pipe arranged on the side wall of the treatment box, and a receiving step assembly is arranged in the cleaning box for receiving the plurality of single crystal silicon wafers after cutting. Water is supplied to the inside of the treatment box through the water inlet pipe and the upper surface of the receiving step assembly of the cleaning box is immersed.

[0011] The cutting cleaning device further comprises a bubble spraying assembly arranged on the outer wall of the cleaning tank, which is used for spraying high-speed bubbles into the water in the cleaning tank to generate cavitation bubbles and clean the cut single crystal silicon wafers.

[0012] Further, the receiving step assembly comprises a plurality of step portions, each of which is positioned and installed on the inner wall of the cleaning tank, and the step portions gradually decrease in height from right to left.

[0013] Each of the step portions comprises a transversely arranged horizontal plate and a connecting plate vertically fixed on the left end of the horizontal plate, the upper end of the connecting plate is in close contact with the left end of the horizontal plate in the longitudinal direction, and each of the horizontal plates is provided with a plurality of through holes in the front-rear longitudinal direction.

[0014] The receiving step assembly further comprises a fluctuation lifting mechanism arranged on the inner wall of the cleaning tank, which is used for fluctuating the step portions to switch the single crystal silicon wafers between the vertically adjacent state and the horizontally inclined state.

[0015] The fluctuation lifting mechanism comprises a plurality of support rods, each of which is positioned and installed in the cleaning tank, and the top of each support rod is fixedly connected with the lower surface of the corresponding connecting plate.

[0016] Further, a hydraulic telescopic rod is fixedly arranged in the cleaning tank in the left-right transverse direction, the output end of the hydraulic telescopic rod is fixedly connected with a plurality of second transmission bars which are V-shaped and telescopic, each V-shaped second transmission bar is provided with a plurality of limiting grooves on the rising part and the falling part, and the adjacent two limiting grooves of each V-shaped second transmission bar are in inverted V-shaped distribution.

[0017] The side wall of the cleaning tank close to the mounting frame is provided with a discharge limiting plate having a bending portion, and the horizontal plate at the leftmost end of the receiving step assembly is in contact with the initial end of the bending portion of the discharge limiting plate.

[0018] Further, the multi-wire saw assembly comprises two groups of electric sliding rails respectively arranged on the front and back sides of the vertical plane where the mounting frame and the cleaning box meet, each group of the electric sliding rails is internally provided with an electric sliding block, the electric sliding block is fixed with a mounting disc towards the side wall of the cleaning box, each mounting disc is in T-shaped structure comprising a horizontal section and a vertical section, a plurality of mounting strips are arranged on the vertical section of each mounting disc, the mounting strips on the front and back mounting discs are longitudinally arranged in one-to-one correspondence in the front and back directions, and the mounting strips on each mounting disc are equidistantly distributed and slidingly mounted in the sliding groove where the mounting disc is located.

[0019] Each mounting strip is fixed with a mounting piece at the opposite end close to the center line direction along which the device extends in the left and right directions, and two transmission wheels are mounted on each mounting piece, the multi-wire saw assembly further comprises a first connecting strip and a second connecting strip in downward L-shaped structure respectively arranged on the front and back mounting discs, the horizontal section end of the first connecting strip and the horizontal section end of the second connecting strip are respectively fixed with a second motor and a first motor, the output shaft end of the second motor is fixed with a winding roller, the output shaft end of the first motor is fixed with an unwinding roller, a cutting wire is wound between the winding roller and the unwinding roller, the cutting wire sequentially passes through the two transmission wheels on the left and right sides of each mounting piece, and the two transmission wheels on each mounting strip are tangent to the outer wall of the cutting wire.

[0020] The multi-wire saw assembly further comprises a limiting transmission mechanism arranged on the mounting disc, the limiting transmission mechanism can drive the equidistant expansion of the plurality of mounting strips to adjust the spacing of the single crystal silicon rod in the longitudinal direction.

[0021] Further, the limiting transmission mechanism comprises a first screw rod rotatably mounted in the horizontal section of each mounting disc, and a first rod sleeve slidingly arranged inside the mounting disc, the first rod sleeve is threadedly connected with the first screw rod, the first rod sleeve is fixedly connected with a first transmission strip extending in the left and right directions, a plurality of transmission grooves are formed in the first transmission strip, and the plurality of transmission grooves are symmetrically distributed about the longitudinal center line of the first transmission strip, the limiting transmission mechanism further comprises a transmission column fixed on each mounting strip away from the device along the center line direction in the left and right directions, each transmission column is limitingly moved in the front and back directions in the corresponding transmission groove, and the limiting transmission mechanism further comprises a third motor fixed on the outer wall of each mounting disc, the output shaft of the third motor passes through the through hole of the mounting disc and is fixed with the end of the corresponding first screw rod.

[0022] Further, the screw conveying assembly comprises a mounting groove opened in the top of the mounting frame, a second screw mounted in the mounting groove, and a second rod sleeve limited to slide in the mounting groove by the second screw, the second screw passes through the through hole of the second rod sleeve and is screwed with the second rod sleeve, and a fourth motor fixed to the end of the mounting frame, the fourth motor is used to drive the second screw to rotate.

[0023] The screw conveying assembly further comprises a mounting block fixed to the bottom of the second rod sleeve, and a suction disc mounted on the front side of the mounting block and used to adsorb and fix the single crystal silicon rod.

[0024] Further, the bubble spraying assembly comprises a pipe frame and a mounting pipe mounted on the pipe frame, two groups of left and right opposite spraying mechanisms are arranged on the mounting pipe, the two groups of spraying mechanisms extend into the cleaning box and act on the upper surface and the lower surface of the receiving step assembly respectively, and each group of spraying mechanisms comprises a plurality of spraying arms.

[0025] Each group of spraying arms comprises a connecting pipe, a first fluid pipe and a second fluid pipe arranged at two ends of the connecting pipe respectively, one end of the first fluid pipe away from the connecting pipe is communicated with the mounting pipe, and one end of the second fluid pipe away from the connecting pipe extends into the cleaning box; the bubble spraying assembly further comprises a pump body arranged on the processing box, an input end of the pump body is communicated with the inside of the mounting pipe through a first conduit, and an output end of the pump body is communicated with a drain pipe at the bottom of the processing box through a second conduit.

[0026] Further, a belt transmission mechanism is arranged in the middle of the processing box and used to convey the single crystal silicon wafer after cleaning, and the belt transmission mechanism is located below the receiving step assembly; a detachable collecting box is further arranged at the bottom of the processing box and used to collect the single crystal silicon wafer, and the collecting box is located below the discharge end on the left side of the belt transmission mechanism.

[0027] The application further provides a cutting and cleaning method of a single crystal silicon wafer, which is realized by using the cutting and cleaning device of the single crystal silicon wafer.

[0028] S1: water is injected into the processing box through the water inlet pipe, and the water is used to immerse the upper surface of the receiving step assembly where the cleaning box is located;

[0029] S2: the screw conveying assembly located at the top of the mounting frame in the processing box is started, the single crystal silicon rod is conveyed to the position directly below the multi-wire cutting assembly at the front end of the mounting frame, the single crystal silicon rod is cut into a plurality of single crystal silicon wafers in equal intervals under the action of the multi-wire cutting assembly, and the single crystal silicon rod is cut into a plurality of single crystal silicon wafers after one-time cutting.

[0030] S3: The cut several single crystal silicon wafers fall into the cleaning box, and under the action of the receiving step assembly, the several single crystal silicon wafers are distributed on the receiving step assembly in stages;

[0031] S4: The bubble spraying assembly is opened, and the single crystal silicon wafers stacked on the receiving step assembly are washed on both sides by high-energy bubbles.

[0032] Compared with the prior art, the beneficial effects of the present application are as follows:

[0033] According to the present application, the single crystal silicon rod can be cut into multiple segments with equal intervals by the parallel cutting lines formed by the multi-wire cutting assembly, and multiple single crystal silicon wafers can be formed after one cutting. The design greatly improves the work efficiency and ensures the cutting quality of the single crystal silicon wafers. According to the cutting process, the number and distance of the equal-interval cutting lines of the multi-wire cutting assembly can be designed to meet the processing requirements of different specifications and processes.

[0034] According to the present application, the single crystal silicon rod can be cut into multiple segments with equal intervals by the parallel cutting lines formed by the multi-wire cutting assembly, and multiple single crystal silicon wafers can be formed after one cutting. The design greatly improves the work efficiency and ensures the cutting quality of the single crystal silicon wafers. According to the cutting process, the number and distance of the equal-interval cutting lines of the multi-wire cutting assembly can be designed to meet the processing requirements of different specifications and processes.

[0035] According to the present application, the single crystal silicon rod can be cut into multiple segments with equal intervals by the parallel cutting lines formed by the multi-wire cutting assembly, and multiple single crystal silicon wafers can be formed after one cutting. The design greatly improves the work efficiency and ensures the cutting quality of the single crystal silicon wafers. According to the cutting process, the number and distance of the equal-interval cutting lines of the multi-wire cutting assembly can be designed to meet the processing requirements of different specifications and processes.

[0036] According to the present application, the single crystal silicon rod can be cut into multiple segments with equal intervals by the parallel cutting lines formed by the multi-wire cutting assembly, and multiple single crystal silicon wafers can be formed after one cutting. The design greatly improves the work efficiency and ensures the cutting quality of the single crystal silicon wafers. According to the cutting process, the number and distance of the equal-interval cutting lines of the multi-wire cutting assembly can be designed to meet the processing requirements of different specifications and processes. BRIEF DESCRIPTION OF DRAWINGS

[0037] Figure 1 It is a first perspective view of the structure of the present application.

[0038] Figure 2 It is a second perspective view of the structure of the present application. Figure 1

[0039] Figure 3 It is a second perspective view of the structure of the present application.​Figure 1 a third perspective view of the structure from a third angle;

[0040] Figure 4 a fourth perspective view of the structure from a fourth angle; Figure 1

[0041] Figure 5 a front view of the structure; Figure 1

[0042] Figure 6 a side view of the structure; Figure 1

[0043] Figure 7 a cross-sectional view of the structure along line A-A;

[0044] Figure 8 a perspective view of the structure; Figure 7

[0045] a partial enlarged view of the multi-wire cutting assembly of the present application; Figure 9

[0046] a partial enlarged view of the A portion in the present application; Figure 10 Figure 9 a partial enlarged view of the receiving step assembly of the present application;

[0047] Figure 11 a partial enlarged view of the B portion in the present application.

[0048] Figure 12 Figure 11

[0049] In the figure: 1, treatment box; 2, support frame; 3, drain pipe; 4, water inlet pipe; 5, cleaning box; 6, mounting pipe; 7, first fluid pipe; 8, connecting pipe; 9, second fluid pipe; 10, mounting frame; 11, mounting block; 12, mounting groove; 13, suction cup; 14, single crystal silicon rod; 15, electric sliding rail; 16, cutting wire; 17, mounting disc; 18, first transmission bar; 19, first motor; 20, second motor; 21, transmission groove; 22, mounting bar; 23, transmission wheel; 24, mounting piece; 25, winding roller; 26, unwinding roller; 27, third motor; 28, first screw rod; 29, first rod sleeve; 30, electric sliding block; 31, pump body; 32, pipe frame; 33, cross plate; 34, linking plate; 35, discharge limiting plate; 36, support rod; 37, second transmission bar; 38, limiting groove; 39, limiting column; 40, hydraulic telescopic rod; 42, collection box; 43, transmission column; 44, first connecting bar; 45, second connecting bar; 46, second rod sleeve; 47, second screw rod; 48, fourth motor; 49, belt transmission mechanism. DETAILED DESCRIPTION ​​​​​​

[0050] In the description of the present application, it should be understood that the terms "length", "width", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. The embodiments of the present application will be described in detail below with reference to the drawings.

[0051] Embodiment

[0052] Please refer to Figures 1 to 12 , the present application preferably provides a technical scheme: a single crystal silicon wafer cutting and cleaning device, comprising: a support frame 2, and a processing box 1 arranged on the support frame 2; the processing box 1 is connected with a mounting frame 10 at the top, and a screw rod conveying assembly is arranged at the top of the mounting frame 10, which is used for intermittent conveying of a single crystal silicon rod 14; a multi-wire cutting assembly is arranged at the front end of the mounting frame 10, which is used for equidistant cutting of the single crystal silicon rod 14 and forming a plurality of single crystal silicon wafers; the cutting and cleaning device further comprises a cleaning box 5 communicated at the top of the processing box 1 and a water inlet pipe 4 arranged on the side wall of the processing box 1, the cleaning box 5 and the mounting frame 10 are arranged side by side in the horizontal direction (i.e. left and right direction) on the top of the processing box 1, the height of the mounting frame 10 is higher than the height of the cleaning box 5, a receiving step assembly is arranged inside the cleaning box 5, which is used for receiving the plurality of single crystal silicon wafers after cutting, and the water in the water inlet pipe 4 is used to immerse the upper surface of the receiving step assembly of the cleaning box 5; the cutting and cleaning device further comprises a bubble spraying assembly arranged on the outer wall of the cleaning box 5, which is used for high-speed injection into the water in the cleaning box 5 and generating cavitation bubbles to wash the plurality of single crystal silicon wafers after cutting.

[0053] In this embodiment, the single crystal silicon rod 14 can be installed horizontally through the screw rod conveying assembly, and the multi-wire cutting assembly is arranged as shown in Figure 1 , the single crystal silicon rod 14 is located directly below the multi-wire cutting assembly, under the action of the multi-wire cutting assembly, the cutting wire 16 forms a plurality of equidistant parallel lines arranged in the horizontal transverse direction, and the plurality of parallel cutting lines can be used to cut the single crystal silicon rod 14 horizontally transported below the multi-wire cutting assembly in the longitudinal direction, that is, a plurality of single crystal silicon wafers can be formed after cutting once, and the design greatly improves the work efficiency and ensures the cutting quality of the single crystal silicon wafer, according to the cutting process, the number and distance of the equidistant cutting lines of the multi-wire cutting assembly can be designed, and the processing requirements of different thicknesses of single crystal silicon wafers can be realized.

[0054] By filling the processing tank 1 with water, submerging the upper surface of the receiving step assembly where the cleaning tank 5 is located, several cut monocrystalline silicon wafers enter the receiving step assembly inside the cleaning tank 5 from top to bottom in the vertical direction of the cut. The water filling the cleaning tank 5 from the processing tank 1 buffers the monocrystalline silicon wafers that have just entered the cleaning tank 5, reducing collision damage between the monocrystalline silicon wafers and the receiving step assembly. Subsequently, under the structural action of the receiving step assembly, the monocrystalline silicon wafers gradually tilt from the initial vertical state to the horizontal state, until they are completely horizontal and gradually spread out on the receiving step assembly, thereby reducing the impact of using, for example, The process involves robotic arms and other mechanical components picking up individual monocrystalline silicon wafers from closely spaced vertical surfaces and then moving them to a horizontally laid-out or staggered stacked state at a certain angle. During this process, the mechanical arms' gripping or movement causes minor damage to the monocrystalline silicon wafers, thus avoiding increased production costs and wasted raw materials. Furthermore, by progressively stacking several monocrystalline silicon wafers at a right-side horizontal angle, and then activating the bubble spray assembly, high-energy bubble washing can be performed on both sides of the wafers on the receiving step assembly, thereby improving cleaning capacity and range.

[0055] It should be clarified that the horizontal direction mentioned in this invention is derived from... Figure 1 The entire device shown is arranged from left to right, with the longitudinal direction being from front to back and the vertical direction being from the upper right to the bottom. All horizontal, longitudinal, and vertical directions mentioned in the description of all technical features and solutions of this invention refer to the same direction.

[0056] Further, the multi-wire saw assembly comprises two groups of electric sliding rails 15 respectively arranged on the front and back sides of the vertical plane where the mounting rack 10 meets the cleaning tank 5, each group of electric sliding rails 15 has an electric sliding block 30 movably arranged in the electric sliding rail 15, the electric sliding block 30 is fixed with a mounting disc 17 on the side wall of the cleaning tank 5, the mounting disc 17 is arranged in a horizontal state, each mounting disc 17 is in a T-shaped structure comprising a horizontal section and a vertical section, the horizontal section of each mounting disc 17 is arranged in the longitudinal direction of the device, and the vertical section is arranged in the horizontal direction (i.e. left-right direction) of the device; a plurality of mounting bars 22 are arranged on the vertical section of each mounting disc 17, the mounting bars 22 on the front and back mounting discs 17 are arranged in a one-to-one corresponding front-back direction, and the mounting bars 22 on each mounting disc 17 are distributed at equal intervals and slidably arranged in the sliding groove of the mounting disc 17 towards the horizontal center line; each mounting bar 22 is fixed with a mounting piece 24 at the opposite end close to the center line direction of the device extending in the left-right direction, the center line extends in the left-right direction of the device, and the vertical plane of the straight line where the center line is located divides the device into two equal parts in the front-back direction, and two transmission wheels 23 are arranged on each mounting piece 24, the two transmission wheels 23 are arranged at the left and right ends of the mounting piece 24 in a horizontal center line axis symmetry manner, the multi-wire saw assembly further comprises a first connecting bar 44 and a second connecting bar 45 arranged on the front mounting disc 17 and the back mounting disc 17 respectively, the first connecting bar 44 is in a downward L shape, the horizontal length (i.e. left-right direction) of the first connecting bar 44 is less than the length of the second connecting bar 45, the horizontal section end of the first connecting bar 44 and the second connecting bar 45 away from the mounting rack 10 is respectively fixed with a second motor 20 and a first motor 19, the output shaft end of the second motor 20 is fixed with a winding roller 25, the output shaft end of the first motor 19 is fixed with an unwinding roller 26, the cutting wire 16 is wound between the unwinding roller 26 and the winding roller 25, the cutting wire 16 passes through the two transmission wheels 23 on the left and right sides of each mounting piece 24 in sequence, and the two transmission wheels 23 on each mounting bar 22 are tangent to the outer wall of the cutting wire 16; the multi-wire saw assembly further comprises a limiting transmission mechanism arranged on the mounting disc 17, the limiting transmission mechanism can drive the equal interval expansion of the plurality of mounting bars 22 to adjust the spacing of the longitudinal direction wire saw single crystal silicon rod 14.

[0057] The mounting piece 24 on the mounting disc 17 and the transmission wheel 23 are both mounted on the upper corresponding positions of the plurality of mounting strips 22 on the mounting disc 17; the cutting line 16 is first unwound by the unwinding roller 26 and passes through the two transmission wheels 23 on the rightmost mounting strip 22 on the rear mounting disc 17 closest to it, and is drawn to the two transmission wheels 23 of the rightmost mounting strip 22 on the corresponding front mounting disc 17, then turns 180 degrees and is wound between the two transmission wheels 23 on the second leftmost mounting strip 22 on the front mounting disc 17, and then is drawn to the two transmission wheels 23 between the second leftmost mounting strip 22 on the corresponding rear mounting disc 17, and so on, in a regular snake shape, passing through and being wound between the two transmission wheels 23 of the corresponding mounting strips 22 in turn, forming a snake-shaped route that passes through in front and behind in turn from left to right, and is finally wound on the winding roller 25.

[0058] Through the structural arrangement of the multi-wire cutting assembly, as shown in FIGS. Figure 1 、 2 and 9, through the equidistant distribution of the plurality of mounting strips 22 in the left-right direction, and the arrangement of two transmission wheels 23 on each mounting piece 24 at the left and right ends respectively, when the cutting line 16 passes between the two transmission wheels 23 on each mounting piece 24 in turn, and the two transmission wheels 23 are tangent to the outer wall of the cutting line 16, the cutting line 16 can form a plurality of parallel cutting line segments that are equidistantly distributed in the left-right direction. In use, the single crystal silicon rod 14 is conveyed by the screw conveying assembly from below the top of the mounting frame 10 to below the multi-wire cutting assembly above the cleaning box 5 at the front end of the mounting frame 10, so that the longitudinal cutting line segment of the cutting line 16 located at the first position on the right side is aligned with the end of the single crystal silicon rod 14, then the first motor 19 and the second motor 20 are started at the same time to drive the unwinding roller 26 and the winding roller 25 respectively, and then the cutting line 16 is caused to run between the unwinding roller 26 and the winding roller 25 at a certain linear velocity under the driving action of the two, after that, the electric sliding block 30 is started to slide up and down inside the electric sliding rail 15, which can drive a plurality of mutually parallel longitudinal segments of the cutting line 16 in the snake-shaped route arranged on the lower part of the two front and rear mounting discs 17 to cut the single crystal silicon rod 14 into equal parts from top to bottom, so that a plurality of single crystal silicon wafers can be cut and formed at one time. According to the cutting process requirements of single crystal silicon wafers of different thicknesses, the limiting transmission mechanism can be selectively started to adjust the interval distance of the plurality of mounting strips 22 in the left-right direction at equal intervals, so as to realize the interval distance adjustment of the plurality of mutually parallel longitudinal segments of each cutting line 16 in the left-right direction.

[0059] Further, the limiting transmission mechanism comprises a first screw rod 28 rotatably installed in the transverse section of each mounting disc 17, and a first rod sleeve 29 slidably arranged inside the mounting disc 17, the first rod sleeve 29 being threadedly connected with the first screw rod 28, the first rod sleeve 29 being fixedly connected with a first transmission bar 18 extending along the left-right direction, the first transmission bar 18 being provided with a plurality of transmission grooves 21, the plurality of transmission grooves 21 being symmetrically distributed about the longitudinal center line of the first transmission bar 18, the limiting transmission mechanism further comprising a transmission column 43 fixedly arranged on each mounting strip 22 in the direction away from the device along the center line of the left-right direction, each transmission column 43 being limitedly movable in the front-rear direction in the corresponding transmission groove 21; the first transmission bar 18 being arranged in the horizontal direction of the entire device (i.e. the left-right direction of the entire device); the transverse section of each mounting disc 17 being in the form of an open hollow groove structure at the upper portion, the first screw rod 28 and the first rod sleeve 29 being arranged in the hollow groove structure;

[0060] The limiting transmission mechanism further comprises a third motor 27 fixedly arranged on the outer wall of each mounting disc 17, the output shaft of the third motor 27 penetrating through the through hole of the mounting disc 17 and being fixedly connected with the end portion of the corresponding first screw rod 28.

[0061] Through the structural arrangement of the limiting transmission mechanism, when it is required to adjust the interval distance of the plurality of mounting strips 22 in the left-right direction according to the cutting process requirements of single crystal silicon wafers with different thicknesses, the third motor 27 can be turned on, the first rod sleeve 29 can be driven to rotate along the first screw rod 28, and the first transmission bar 18 can be driven to move in the left-right direction. Figure 9 , Figure 10As shown, since several installation bars 22 are equidistantly distributed and slidingly installed in the sliding groove where the installation disc 17 is located, the sliding direction is parallel to the setting direction of the single crystal silicon rod 14, and several transmission grooves 21 are opened on the first transmission bar 18, and several transmission grooves 21 are symmetrically distributed about the longitudinal center line of the first transmission bar 18, that is, a straight line extending from the front to the rear of the entire device, which symmetrically divides the first transmission bar into left and right two parts. When the third motor 27 works, since the first screw rod 28 is threadedly connected with the first rod sleeve 29, it can drive the two first transmission bars 18 on the two installation discs 17 on the front and back sides to move towards or away from each other in the same longitudinal direction. During the movement of the two first transmission bars 18 towards each other (i.e., the two first transmission bars 18 are close to each other), since the plurality of transmission grooves 21 on each of the two first transmission bars 18 are outwardly expanded relative to the horizontal center line of the entire device (i.e., the plurality of transmission grooves 21 on the two first transmission bars 18 are symmetrically arranged about the horizontal center line of the entire device, and the plurality of transmission grooves 21 on each of the two first transmission bars 18 are symmetrically arranged about the longitudinal center line of the first transmission bar 18, the transmission grooves 21 located on the longitudinal center line of the first transmission bar 18 are in a vertical longitudinal state relative to the horizontal line, the plurality of transmission grooves 21 located on the left side of the longitudinal center line of the first transmission bar 18 are deviated by a certain acute angle to the left front relative to the longitudinal direction, and the deviated angles are the same to ensure that the plurality of installation bars 22 are spaced apart by a certain distance in the left-right direction, and then the plurality of installation bars 22 move outward relative to the horizontal center line of the entire device in the corresponding transmission grooves 21, thereby expanding the interval distance in the left-right direction between the longitudinal sections of the cutting line 16 defined by the two transmission wheels 23 on the two adjacent installation bars 22.

[0062] On the contrary, during the movement of the two first transmission bars 18 away from each other (i.e., the two first transmission bars 18 are far away from each other), the plurality of installation bars 22 made of fiber move relative to the first transmission bar 18, and then the installation bars 22 under each of the installation discs 17 on the front and back sides move close to each other, thereby shortening the interval distance in the left-right direction between the longitudinal sections of the cutting line 16 defined by the two transmission wheels 23 on the two adjacent installation bars 22. During the movement of the first transmission bar 18 driven indirectly by the third motor 27, since each installation bar 22 moves forward or backward relative to the first transmission bar 18 in the corresponding transmission groove 21 through a transmission column 43, the installation bars 22 on the front and back sides move away from each other during the movement of the first transmission bar 18 towards each other, and move close to each other during the movement of the first transmission bar 18 away from each other, thereby achieving the equidistant change of the interval distance in the left-right direction between the longitudinal sections of the cutting line 16 defined by the two transmission wheels 23 on the plurality of installation bars 22.

[0063] Further, the screw conveying assembly comprises a mounting groove 12 opened in the top of the mounting frame 10, a second screw 47 mounted in the mounting groove 12, and a second rod sleeve 46 slidingly positioned by the second screw 47 in the mounting groove 12, the second screw 47 passing through the through hole of the second rod sleeve 46 and being threadedly connected with the second rod sleeve 46, and a fourth motor 48 fixedly mounted at the end of the mounting frame 10, the fourth motor 48 being used for driving the second screw 47 to rotate; the screw conveying assembly further comprises a mounting block 11 fixedly mounted at the bottom of the second rod sleeve 46, and a suction disc 13 mounted on the front side of the mounting block 11, the suction disc 13 being used for adsorbing and fixing the single crystal silicon rod 14.

[0064] As shown in Figure 7 and 8 , when the fourth motor 48 is started to work, the second screw 47 is driven to rotate, thereby driving the mounting block 11 fixedly connected with the lower part of the second rod sleeve 46 to move in the left-right direction, so as to adjust the alignment position of the single crystal silicon rod 14 with the multi-wire cutting assembly, that is, to adjust the cutting position of the single crystal silicon rod 14 to be cut. Through the setting mode of the screw conveying assembly, the alignment position of the single crystal silicon rod 14 with the longitudinal section of the rightmost end of the cutting wire in the multi-wire cutting assembly can be accurately adjusted, and thus the cutting position can be effectively and accurately adjusted, so as to avoid the waste of raw materials at the initial end due to the inaccurate alignment position of the single crystal silicon rod 14.

[0065] Embodiment

[0066] As another embodiment of the present application, the receiving step assembly comprises a plurality of step portions, each of which is limitedly mounted on the inner wall of the cleaning tank 5 in an up-down manner, and the height of the step portions gradually decreases from right to left; each step portion comprises a horizontal plate 33 longitudinally arranged in the front-rear direction, and a link plate 34 vertically fixed on the left end of the horizontal plate 33, the upper end side wall of the link plate 34 is tightly attached to the left side of the horizontal plate 33 in the longitudinal direction, and a plurality of through holes are arranged in each horizontal plate 33 in the front-rear longitudinal direction; the receiving step assembly further comprises a fluctuation lifting mechanism arranged on the inner wall of the cleaning tank 5, which is used for the fluctuation of the plurality of step portions.

[0067] In this embodiment, through the receiving step assembly, as shown in Figure 7 , 8, 11 and 12, several step portions are arranged from right to left with gradually decreasing height, and each step portion is vertically composed of a horizontal plate 33 and a connecting plate 34, and the upper end side wall of the connecting plate 34 is in close contact with the left side first end of the horizontal plate 33 in the longitudinal direction. After the single crystal silicon rod 14 is transported to the lower side of the multi-wire cutting assembly and is aligned with the longitudinal section of the rightmost end of the cutting wire 16 by the screw rod conveying assembly, and the cutting wire 16 is driven to cut the single crystal silicon rod 14 by the up-and-down movement of the multi-wire cutting assembly, a plurality of single crystal silicon wafers in vertical close proximity are obtained. Then, the water inlet pipe 4 is opened in advance to fill the cleaning tank 5 with water to immerse the several step portions. When the several single crystal silicon wafers obtained by cutting fall onto the upper surface of the receiving step assembly of the cleaning tank 5 in the state of vertical close proximity under the action of gravity, no upward reaction impact force is generated on the single crystal silicon wafers due to the buffering effect of the water filled in advance, and the single crystal silicon wafers are not broken. Due to the structure of the several step portions with gradually decreasing height from right to left, the several single crystal silicon wafers are dispersed and spread on different step portions. At the same time, the fluctuation jacking mechanism is used to realize the synchronous fluctuation of the several step portions driven by the extension and contraction of the fluctuation jacking mechanism, thereby improving the cleaning efficiency and further improving the cleaning quality.

[0068] As another effect of the fluctuation of the step portions, the switching fluctuation between the state of vertical close proximity and the state of horizontal close proximity to the right side can be realized under the driving of the fluctuation of the several step portions.

[0069] Further, the fluctuation jacking mechanism includes several support rods 36, each of which is positioned in the cleaning tank 5 in the up-and-down direction, and the top of each support rod 36 is fixedly connected to the lower surface of the corresponding connecting plate 34. The hydraulic telescopic rod 40 is fixedly connected to the output end of the hydraulic telescopic rod 40, and the second transmission bar 37 is fixedly connected to the output end of the hydraulic telescopic rod 40. Each V-shaped second transmission bar 37 is divided into several segments, and each V-shaped segment of the second transmission bar 37 corresponds to two support rods 36 in the vertical direction. The left side support rod 36 in the two support rods 36 corresponds to the descending part of the V-shaped segment in the vertical direction, and the right side support rod 36 in the two support rods 36 corresponds to the ascending part of the V-shaped segment in the vertical direction. The ascending part and the descending part of the V-shaped segment of each second transmission bar 37 are provided with several limiting grooves 38 on the front and rear side walls, and the two limiting grooves 38 corresponding to the V-shaped segment of the second transmission bar 37 are arranged in an inverted V shape. Each support rod 36 is fixedly connected to a limiting column 39 at the lower part, and each limiting column 39 is limited to slide in the limiting groove 38.

[0070] Under the action of the wave fluctuation jacking mechanism, since the adjacent two limiting grooves 38 corresponding to the V-shaped segmented part on the second transmission bar 37 are in inverted V-shaped distribution, and each segmented part of the V-shaped second transmission bar 37 corresponds to two support rods 36 in the vertical direction, each support rod 36 is limited up and down on the inner wall of the cleaning box 5, as shown in Figure 11 、 Figure 12 When the hydraulic telescopic rod 40 drives the second transmission bar 37 to move back and forth, under the limiting action of the limiting column 39 and the limiting groove 38, two adjacent support rods 36 corresponding to each V-shaped segmented part of the second transmission bar 37 can be realized to move up and down, so that the plurality of horizontal plates 33 fixed on the upper part of each support rod 36 have a dynamic high-low fluctuation action

[0071] When the hydraulic telescopic rod 40 drives the second transmission bar 37 to extend to the left, the angle between the left descending part and the right ascending part of the plurality of V-shaped segmented parts is continuously expanded, and the angle of the two adjacent limiting grooves 38 corresponding to the segmented part is also expanded synchronously. The left support rod 36 corresponding to the left descending part of a V-shaped segmented part moves upward relative to the left limiting groove 38 during the left expansion of the left descending part, and the limiting column 39 limited in the limiting groove moves upward relative to the left limiting groove 38, and the left support rod 36 is jacked up, and the left support rod 36 is jacked up in the vertical direction. The single crystal silicon wafer received by the left support rod 36 falls into the cleaning box 5 and is jacked up;

[0072] At the same time, the right limiting groove 38 also moves to the left, and the limiting column 39 limited in the limiting groove moves downward along the ascending part of the segmented groove from left to right, and the right support rod 36 is driven to descend relative to the original state;

[0073] Therefore, during the extension of the second transmission bar 37 by the hydraulic telescopic rod 40, the two support rods 36 corresponding to each V-shaped segment are such that the left side is lifted relative to its initial position, while the right side is lowered relative to its initial position. Consequently, the monocrystalline silicon wafer on the left tilts to the right and stacks onto the monocrystalline silicon wafer on the right. Furthermore, since the initial height of the multiple pairs of support rods 36 corresponding to the multiple V-shaped segments increases sequentially from left to right, during the extension of the second transmission bar 37 by the hydraulic telescopic rod 40, when every two monocrystalline silicon wafers tilt and stack from left to right, adjacent right-side monocrystalline silicon wafers belonging to one pair are also stacked onto the left-side monocrystalline silicon wafers of another pair. This completes the process of the monocrystalline silicon wafers tilting and stacking from their initial vertical position to a horizontal position on the right. This allows the bubble spray assembly to simultaneously spray the upper and lower surfaces of the monocrystalline silicon wafers, effectively improving the cleaning quality. The system improves both quantity and cleaning efficiency (eliminating the need to flip the wafers over for cleaning after cleaning one side). Furthermore, the extension or retraction of the second transmission bar 37, driven by the hydraulic telescopic rod 40, allows for rapid and efficient cleaning of the monocrystalline silicon wafers by moving them from an initial vertical position to a horizontally inclined stacked position on the right. After cleaning, the system can also facilitate the overall transfer and unloading of multiple monocrystalline silicon wafers, saving storage space in the same basket during transport and allowing more wafers to be stored in the same basket, thus improving the efficiency of fluctuating conveying and unloading.

[0074] Furthermore, a discharge limiting plate 35 with a bend is provided on the side wall of the cleaning tank 5 near the mounting frame 10, and the horizontal plate 33 located at the leftmost end of the receiving step assembly contacts the initial end of the bend of the discharge limiting plate 35.

[0075] In this embodiment, such as Figure 7 , 8 As shown in Figures 11 and 12, when the oscillating lifting mechanism is running, when the connecting plate 34 of the leftmost end horizontal plate 33 moves downward along the curved surface of the bending part of the discharge limiting plate 35 to the left, when it moves to the end of the bending part, the connecting plate 34 of the leftmost end horizontal plate 33 is below the horizontal plane of the lower end face of the mounting frame 10, and then separates from the discharge limiting plate 35, at this time a discharge channel is formed between the discharge limiting plate 35 and the end of the leftmost end horizontal plate 33, so that when multiple single crystal silicon wafers on multiple steps of the receiving step assembly fall from left to right, they fall slowly onto the belt drive mechanism 49 where the processing box 1 is located. Preferably, the structural shape of the discharge limiting plate 35 makes it possible to form a discharge channel between the discharge limiting plate 35 and the end of the horizontal plate 33, and the width of the discharge channel is such that only one single crystal silicon wafer passes through at a time.

[0076] Example

[0077] As other embodiments of the present application, the bubble spray assembly comprises a pipe frame 32, and a mounting pipe 6 mounted on the pipe frame 32, and two groups of left and right opposite spray mechanisms arranged on the mounting pipe 6, and the two groups of spray mechanisms extend into the cleaning tank 5 and respectively act on the upper and lower surfaces of the step part of the receiving step assembly, and each group of spray mechanisms comprises a plurality of spray arms; each group of spray arms comprises a connecting pipe 8, and a first fluid pipe 7 and a second fluid pipe 9 arranged at two ends of the connecting pipe 8 respectively, and the first fluid pipe 7 is communicated with the mounting pipe 6 at an end away from the connecting pipe 8, and the second fluid pipe 9 extends into the cleaning tank 5 at an end away from the connecting pipe 8; the pipe frame 32 is in the shape of an inverted concave letter and surrounds the left side wall, the rear side wall and the right side wall of the cleaning tank 5, and one mounting pipe 6 is arranged at the pipe frame 32 of the left side wall and the right side wall of the cleaning tank 5 respectively, and a plurality of connecting pipes 8 are arranged on each mounting pipe 6 at equal intervals along the front-rear longitudinal direction; one end of each connecting pipe 8 is communicated with the mounting pipe 6 at the side through the first fluid pipe 7, and the other end is communicated with the side wall of the cleaning tank 5 at the side through the second fluid pipe 9, forming a spray arm;

[0078] The bubble spray assembly further comprises a pump body 31 arranged on the processing tank 1, and an input end of the pump body 31 is communicated with the inside of the mounting pipe 6 through a first branch pipe, and the solvent or water used for cleaning the single crystal silicon wafer is connected outside, enters the mounting pipe 6 through the first conduit of the input end of the pump body 31, and then enters from the left side and the right side of the cleaning tank 5 through the spray arms, so as to clean the upper and lower surfaces of the plurality of single crystal silicon wafers in the cleaning tank 5, and an output end of the pump body 31 is communicated with the drain pipe 3 at the bottom of the processing tank 1 through a second conduit, and the output end is connected with the drain pipe 3, and the output end is opened to be communicated with the drain pipe 3 at regular intervals to discharge the cleaning wastewater in the cleaning tank 5.

[0079] In this embodiment, as shown in Figure 7 , 8 , 11 and 12, the bubble spray assembly is arranged through the structure and the mounting position, as shown in Figure 11 , Figure 12 , two groups of opposite spray mechanisms are arranged on the mounting pipe 6, and the two groups of spray mechanisms extend into the cleaning tank 5 and respectively act on the upper and lower surfaces of the step part, that is, the water sprayed by the right spray mechanism corresponds to the lower surface of the step part, and the water sprayed by the left spray mechanism corresponds to the upper surface of the step part, and when the single crystal silicon wafer falls on the receiving plate 34, the left and right spray mechanisms can clean the upper and lower surfaces of the single crystal silicon wafer through high-energy bubbles;

[0080] The bubble spray assembly is arranged through the structure of the spray arm, that is, the first fluid pipe 7 and the second fluid pipe 9 arranged at two ends of the connecting pipe 8, as shown in Figure 1 and 10As shown, when the pump body 31 works, at this time, water enters the inside of the installation pipe 6, and sequentially passes through the first fluid pipe 7 where the spray arm is located, the connecting pipe 8 and the second fluid pipe 9, the water flow first contracts and then expands, the flow rate of the water increases, according to Bernoulli equation, the greater the flow rate of the water, the smaller the static pressure thereof, when the static pressure is smaller than the saturated vapor pressure of the water at the temperature, the water will be gasified to form bubbles, which is cavitation phenomenon, the high-energy bubble in the water flow can produce strong compression wave or microjet on the microscale and form shock wave when diffusing, thereby bringing strong impact force several times of pure water, so that the cleaning area and capacity of the single crystal silicon wafer are improved, and the cleaning effect of the single crystal silicon wafer is greatly improved.

[0081] Further, the belt driving mechanism 49 is arranged in the middle of the processing box 1 and is used for conveying the single crystal silicon wafers after cleaning, the belt driving mechanism 49 is located below the step part of the receiving step assembly (specifically, below the step parts of the receiving step assembly), and the bottom of the processing box 1 is also provided with a detachably installed collecting box 42, the collecting box 42 is used for collecting the single crystal silicon wafers after cleaning, and the second transmission bar 37 of the collecting box 42 is located below the discharging end of the belt driving mechanism 49.

[0082] As shown in Figure 7 and 8 , the single crystal silicon wafers after cleaning can fall on the supporting rod 36 for secondary conveying until being collected in the collecting box 42, so that the working efficiency is further improved.

[0083] The application also provides a cutting and cleaning method of a single crystal silicon wafer, which is realized by using the cutting and cleaning device of the single crystal silicon wafer.

[0084] S1: water is injected into the inside of the processing box 1 through the water inlet pipe 4, and the water is used to immerse the upper surface of the receiving step assembly where the cleaning box 5 is located;

[0085] S2: the screw conveying assembly located at the top of the mounting frame 10 in the processing box 1 is started, the single crystal silicon rod 14 is conveyed to the position directly below the multi-wire cutting assembly at the front end of the mounting frame 10, the single crystal silicon rod 14 is cut into multiple segments with equal intervals under the action of the multi-wire cutting assembly, and multiple single crystal silicon wafers are formed after one-time cutting;

[0086] S3: the multiple single crystal silicon wafers after cutting fall into the inside of the cleaning box 5, and are distributed on the receiving step assembly in stages under the action of the receiving step assembly;

[0087] S4: the bubble spray assembly is started, and the single crystal silicon wafers which are obliquely and staggeringly stacked on the receiving step assembly are washed on both sides by high-energy bubbles.

[0088] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including both the preferred embodiments and all changes and modifications falling within the scope of the invention.

[0089] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from the scope of the claims of this invention and their equivalents, and this invention is also intended to include these modifications and variations.

Claims

1. An apparatus for dicing and cleaning a single crystal silicon wafer, characterized by, Include: Support frame (2), and processing box (1) provided on the support frame (2); The processing box (1) top is connected with the mounting frame (10), the screw conveying assembly is arranged in the mounting frame (10) top, which is used for intermittent conveying of single crystal silicon rod (14); A multi-wire cutting assembly is arranged at the front end of the mounting frame (10), which is used for equidistant cutting of the single crystal silicon rod (14) and forms a plurality of single crystal silicon wafers; The cutting and cleaning device further comprises a cleaning tank (5) communicated at the top of the processing tank (1) and a water inlet pipe (4) arranged on the side wall of the processing tank (1), the cleaning tank (5) is internally provided with a receiving step assembly for receiving a plurality of single crystal silicon wafers after cutting; water is supplied to the inside of the processing tank (1) from the water inlet pipe (4) and the upper surface of the receiving step assembly where the cleaning tank (5) is located is immersed; The cutting and cleaning device further comprises a bubble spraying assembly arranged on the outer wall of the cleaning tank (5), which is used for high-speed injection into the water in the cleaning tank (5) and generates cavitation bubbles to wash the plurality of single crystal silicon wafers after cutting; The receiving step assembly comprises a plurality of step portions, each of which is vertically limited and mounted on the inner wall of the cleaning tank (5), and the step portions gradually decrease in height from right to left; Each of the step portions comprises a longitudinal transverse plate (33) and a link plate (34) vertically fixed on the left side end of the transverse plate (33), the upper end side wall of the link plate (34) is in close contact with the left side first end of the transverse plate (33) in the longitudinal direction, and each of the transverse plates (33) is provided with a plurality of through holes in the front-rear longitudinal direction; The receiving step assembly further comprises a fluctuation lifting mechanism arranged on the inner wall of the cleaning tank (5), which is used for fluctuating the plurality of step portions, thereby realizing the switching fluctuation of the single crystal silicon wafers between the vertically adjacent state and the horizontally inclined state to the right side; The fluctuation lifting mechanism comprises a plurality of support rods (36), each of which is vertically limited in the cleaning tank (5), and the top of each support rod (36) is fixedly connected with the lower surface of the corresponding link plate (34); Further comprising a hydraulic telescopic rod (40) fixed laterally in the cleaning tank (5), the output end of the hydraulic telescopic rod (40) is fixedly connected with a plurality of second transmission bars (37) which are V-shaped and telescopic, the segmented part of each V-shaped second transmission bar (37) corresponds to two support rods (36) in the vertical direction, the rising part and the falling part of the V-shaped segmented part of each second transmission bar (37) are provided with a plurality of limiting grooves (38), the adjacent two limiting grooves (38) of the V-shaped segmented part of the second transmission bar (37) are distributed in an inverted eight shape, and each support rod (36) is further fixed with a limiting column (39), each limiting column (39) is limited to slide in the limiting groove (38); The cleaning tank (5) is provided with a discharge limiting plate (35) with a bending part on the side wall close to the mounting frame (10), and the transverse plate (33) located at the leftmost end of the receiving step assembly is in contact with the initial end of the bending part of the discharge limiting plate (35). The multi-wire cutting assembly comprises two groups of electric sliding rails (15) arranged on the front and back sides of the vertical plane where the mounting rack (10) and the cleaning box (5) meet, respectively, and each group of the electric sliding rails (15) is internally provided with an electric sliding block (30), and the electric sliding block (30) is fixed with a mounting disc (17) on the side wall of the side of the cleaning box (5), each mounting disc (17) is in T-shaped structure comprising a horizontal section and a vertical section, and a plurality of mounting strips (22) are arranged on the vertical section of each mounting disc (17), the mounting strips (22) on the mounting discs (17) on the front and back sides are longitudinally arranged in one-to-one correspondence in the front and back directions, and the mounting strips (22) on each mounting disc (17) are equidistantly distributed and slidingly mounted in the sliding groove where the mounting disc (17) is located; Each mounting strip (22) is fixed with a mounting piece (24) at the opposite end close to the center line direction along which the device extends in the left and right directions, and two transmission wheels (23) are mounted on each mounting piece (24), the multi-wire cutting assembly further comprises a first connecting strip (44) and a second connecting strip (45) arranged on the front mounting disc (17) and the rear mounting disc (17), respectively, and both of which are in downward L-shaped structure, the horizontal section end of the first connecting strip (44) is fixed with a second motor (20), and the horizontal section end of the second connecting strip (45) is fixed with a first motor (19), the output shaft end of the second motor (20) is fixed with a winding roller (25), the output shaft end of the first motor (19) is fixed with an unwinding roller (26), the cutting wire (16) is wound between the unwinding roller (26) and the winding roller (25), the cutting wire (16) passes through the two transmission wheels (23) on the left and right sides of each mounting piece (24) in sequence, and the two transmission wheels (23) on each mounting strip (22) are tangent to the outer wall of the cutting wire (16); The multi-wire cutting assembly further comprises a limiting transmission mechanism arranged on the mounting disc (17), and the limiting transmission mechanism can drive the equidistant expansion of the plurality of mounting strips (22) to adjust the spacing of the single crystal silicon rod (14) in the longitudinal direction. The limiting transmission mechanism comprises a first screw rod (28) rotatably mounted in the transverse section of each mounting disc (17), and a first rod sleeve (29) slidably limited in the mounting disc (17), the first rod sleeve (29) is threadedly connected with the first screw rod (28), the first rod sleeve (29) is fixedly connected with a first transmission bar (18) extending in the left-right direction, a plurality of transmission grooves (21) are formed in the first transmission bar (18), and the plurality of transmission grooves (21) are symmetrically distributed about the longitudinal center line of the first transmission bar (18), the limiting transmission mechanism further comprises a transmission column (43) fixed to each mounting bar (22) and extending away from the device along the center line in the left-right direction, and each transmission column (43) is limited to move in the front-rear direction in the corresponding transmission groove (21); the limiting transmission mechanism further comprises a third motor (27) fixed to the outer wall of each mounting disc (17), and the output shaft of the third motor (27) penetrates through the through hole of the mounting disc (17) and is fixed to the end of the corresponding first screw rod (28).

2. The apparatus of claim 1 wherein: The screw rod conveying assembly comprises a mounting groove (12) formed in the top of the mounting frame (10), a second screw rod (47) mounted in the mounting groove (12), and a second rod sleeve (46) slidably limited in the mounting groove (12) by the second screw rod (47), the second screw rod (47) penetrates through the through hole of the second rod sleeve (46) and is threadedly connected therewith, and a fourth motor (48) fixedly mounted at the end of the mounting frame (10), the fourth motor (48) is used to drive the second screw rod (47) to rotate; The screw rod conveying assembly further comprises a mounting block (11) fixed to the bottom of the second rod sleeve (46), and a suction disc (13) mounted on the front side of the mounting block (11) and used to adsorb and fix the single crystal silicon rod (14).

3. The apparatus of claim 1 wherein: The bubble spraying assembly comprises a pipe frame (32), and a mounting pipe (6) mounted on the pipe frame (32), the mounting pipe (6) is provided with two groups of left-right opposite spraying mechanisms, the two groups of spraying mechanisms extend into the cleaning box (5) and act on the upper surface and the lower surface of the receiving step assembly respectively, and each group of spraying mechanisms comprises a plurality of spraying arms; Each group of spraying arms comprises a connecting pipe (8), and a first fluid pipe (7) and a second fluid pipe (9) arranged at two ends of the connecting pipe (8) respectively, one end of the first fluid pipe (7) away from the connecting pipe (8) is in communication with the mounting pipe (6), and one end of the second fluid pipe (9) away from the connecting pipe (8) extends into the cleaning box (5); the bubble spraying assembly further comprises a pump body (31) arranged on the processing box (1), an input end of the pump body (31) is in communication with the inside of the mounting pipe (6) through a first branch pipe, and an output end of the pump body (31) is in communication with the drain pipe (3) at the bottom of the processing box (1) through a second conduit.

4. The apparatus of claim 1 wherein: The processing box (1) is provided with a belt drive mechanism (49) in the middle, which is used for conveying the single crystal silicon wafer after cleaning, and the belt drive mechanism (49) is located below the receiving step assembly; the bottom of the processing box (1) is also provided with a detachable collecting box (42) for collecting single crystal silicon wafers, and the collecting box (42) is located below the left side of the belt drive mechanism (49) at the discharge end.

5. A method for cutting and cleaning a single-crystal silicon wafer, characterized in that, The method is realized by using the single crystal silicon wafer cutting and cleaning device of any one of claims 1-4, and the method comprises the following steps: S1: water is injected into the processing box (1) through the water inlet pipe (4), so that the water immerses the upper surface of the receiving step assembly where the cleaning box (5) is located; S2: open the screw conveying assembly located at the top of the mounting frame (10) in the processing box (1), convey the single crystal silicon rod (14) to the directly below of the multi-wire cutting assembly at the front end of the mounting frame (10), under the action of the multi-wire cutting assembly, cut the single crystal silicon rod (14) into several single crystal silicon wafers with equal intervals, and after one cutting, form several single crystal silicon wafers; S3: several single crystal silicon wafers after cutting fall into the cleaning box (5), and under the action of the receiving step assembly, several single crystal silicon wafers are distributed on the receiving step assembly step by step; S4: open the bubble spraying assembly, and wash the single crystal silicon wafers on the receiving step assembly from both sides with high-energy bubbles.

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