Evaporation source, evaporation device and evaporation method

Abstract

The application discloses an evaporation source, an evaporation device and an evaporation method. The evaporation source comprises a flow guide device, the flow guide device comprises a cavity and a top wall and an inner wall surrounding the cavity, and is used for guiding a to-be-evaporated gas; wherein the flow guide device comprises at least one flow distribution plate, the flow distribution plate is arranged between the top wall and the cavity; the flow distribution plate comprises a plurality of opening regions, and an opening rate of the flow distribution plate is 20-40%; a plurality of nozzles are arranged on the top wall of the flow guide device and are communicated with the cavity; wherein an included angle between a central axis of the nozzle and a height direction of the flow guide device is an inclination angle of the nozzle, and the inclination angle is greater than or equal to 10° and less than or equal to 25°. By tilting the spraying path of the material sprayed by the nozzle relative to the substrate, the application can reduce the probability that part of the material is shielded by the conductive top of the conductive column, improve the deposition range of the material on the substrate, and make the material more fully deposited on the conductive column body, so that the cathode metal film layer and the conductive column body are overlapped.

Description

Technical Field

[0001] This application relates to the field of vapor deposition equipment technology, and in particular to evaporation sources, vapor deposition apparatus, and vapor deposition methods. Background Technology

[0002] To avoid electric field crosstalk between display units in OLED (Organic Light-Emitting Diode) devices, conductive pillars are first formed on the substrate ITO (Indium Tin Oxide) layer using a TFT array. Then, an organic material film is prepared between the conductive pillars using a mask and vapor deposition process. Finally, a cathode metal film is formed on the substrate using a vapor deposition process.

[0003] In the prior art, a horizontal vapor deposition process is generally used for vapor deposition, that is, the substrate is placed horizontally on the rotating unit of the chamber, and the evaporation source is placed horizontally below the substrate so that the material is deposited on the surface of the substrate.

[0004] However, existing technologies cannot achieve continuous connection of cathodes between pixels. Summary of the Invention

[0005] The main technical problem addressed by this application is to provide an evaporation source, a vapor deposition apparatus, and a vapor deposition method, which can solve the problem that the cathode formed by existing vapor deposition technology cannot be well connected with the conductive column.

[0006] To solve the above-mentioned technical problems, the first technical solution adopted in this application is to provide an evaporation source, including: a flow guiding device, which includes a cavity and a top wall and an inner wall surrounding the cavity for guiding the gas to be evaporated; wherein, the flow guiding device includes at least one flow divider plate, which is disposed between the top wall and the cavity; the flow divider plate includes multiple opening areas, and the opening ratio of the flow divider plate is 20-40%; multiple nozzles are disposed on the top wall of the flow guiding device and communicate with the cavity; wherein, the angle between the central axis of the nozzle and the height direction of the flow guiding device is the tilt angle of the nozzle, and the tilt angle is greater than or equal to 10° and less than or equal to 25°.

[0007] The top wall of the flow guiding device is an inclined wall with an angle greater than or equal to 10° and less than or equal to 25° with respect to the horizontal direction; the horizontal direction is perpendicular to the height direction of the flow guiding device; and the nozzle is vertically arranged on the inclined wall.

[0008] The flow guiding device includes multiple flow dividers, which are spaced apart between the top wall and the cavity; each flow divider includes multiple opening areas, and the opening areas between adjacent flow dividers are staggered.

[0009] The inner wall includes a side wall and a bottom wall; the side wall is provided with a drainage pipe, and the end of the drainage pipe away from the side wall is connected to the crucible; preferably, the side wall, the drainage pipe and the crucible are integrally formed.

[0010] The evaporation source also includes a driving device, and the flow guiding device is mounted on the driving device. The driving device is used to drive the flow guiding device to move.

[0011] The evaporation source includes a first heater and a second heater, both of which are located on the outer wall of the corresponding side wall; the first heater is located near the top wall and the second heater is located near the bottom wall.

[0012] The first heater includes a first heating wire, which is in the form of a uniformly distributed rectangular wave; the second heater includes a second heating wire, wherein the first spacing between two adjacent rectangular waves in the first heating wire is less than the second spacing between two adjacent rectangular waves in at least a portion of the second heating wire; preferably, the second heating wire has three segments, each segment of the second heating wire is spaced apart, and each segment of the second heating wire is in the form of a uniformly distributed rectangular wave.

[0013] To solve the above-mentioned technical problems, the second technical solution adopted in this application is to provide a vapor deposition apparatus, including a chamber and an evaporation source disposed in the chamber, wherein the evaporation source is the aforementioned evaporation source.

[0014] The vapor deposition apparatus includes two chambers, in which the nozzles of the evaporation sources in the two chambers are arranged facing each other.

[0015] To solve the above-mentioned technical problems, the third technical solution adopted in this application is to provide a vapor deposition method, which uses the above-mentioned vapor deposition apparatus to vapor deposit a substrate.

[0016] The beneficial effects of this application are as follows: Unlike existing technologies, this application provides an evaporation source, a vapor deposition apparatus, and a vapor deposition method. By placing the nozzle on the top wall of the flow guiding device and ensuring that the angle (tilt angle) formed between the central axis of the nozzle and the height direction of the flow guiding device is greater than or equal to 10° and less than or equal to 25°, the spray path of the material ejected from the nozzle is tilted relative to the substrate. This reduces the probability of some material being blocked by the conductive top of the conductive pillar, increasing the deposition range of the material on the substrate and allowing the material to be deposited more fully onto the conductive pillar, thereby achieving the overlap between the cathode metal film layer and the conductive pillar. Furthermore, by providing a flow divider plate in the flow guiding device, and the flow divider plate including multiple opening areas, it is possible to prevent the gas to be vaporized from entering the nozzle from only one end of the flow guiding device, thereby improving the flowability of the gas to be vaporized in the cavity, allowing the gas to be vaporized to be dispersedly ejected from multiple nozzles, thus improving the uniformity of vapor deposition. Through the above methods, this application can achieve continuous connection of cathodes between pixels, thereby avoiding the problems of pixels failing to light up or poor pixel reliability (easily forming dark spots), and thus improving the display effect. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the example description will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structure of one embodiment of the evaporation source of this application;

[0019] Figure 2 yes Figure 1 Side view of one embodiment of the evaporation source;

[0020] Figure 3 yes Figure 1 Top view of one embodiment of the center splitter;

[0021] Figure 4 This is a schematic diagram of the angle of the material ejected from the existing evaporation source;

[0022] Figure 5 yes Figure 1 Schematic diagram of the angle of material ejected from the evaporation source;

[0023] Figure 6 This is a schematic diagram of one embodiment of an evaporation source equipped with a heater;

[0024] Figure 7 yes Figure 6 Side view of one embodiment of the evaporation source;

[0025] Figure 8 This is a schematic diagram of the structure of the first embodiment of the vapor deposition apparatus of this application. Detailed Implementation

[0026] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0027] The terminology used in the embodiments of this application is for the purpose of describing particular embodiments only and is not intended to limit the application. The singular forms “a,” “said,” and “the” used in the embodiments of this application and the appended claims are also intended to include the plural forms, unless otherwise clearly indicated above. “Multiple” generally includes at least two, but does not exclude the inclusion of at least one.

[0028] It should be understood that the term "and / or" used in this article is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this article generally indicates that the preceding and following related objects have an "or" relationship.

[0029] It should be understood that the terms "comprising," "including," or any other variations used herein are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0030] In existing technologies, horizontal evaporation deposition is generally used. This involves placing the substrate horizontally on a rotating unit within a chamber, with the evaporation source horizontally positioned below the substrate to deposit material onto its surface. However, the conductive pillars have a conductive roof and a pillar connected to the roof. The projected area of ​​the roof is typically larger than that of the pillar, and the angle at which the evaporation source ejects material is usually quite large (55–60°). A significant amount of material is obscured by the roof, preventing the formed cathode metal film from effectively overlapping with the pillar. This results in discontinuous cathode connections between pixels, leading to issues such as pixels failing to light up or poor pixel reliability (easily forming dark spots), ultimately affecting the display performance.

[0031] Based on the above, this application provides an evaporation source, a vapor deposition apparatus, and a vapor deposition method, which can solve the problem that the cathode formed by the existing vapor deposition technology cannot be well connected with the conductive column.

[0032] To illustrate the specific structure of the evaporation source in this application, please refer to [link / reference]. Figure 1 , Figure 2 and Figure 3 , Figure 1 This is a schematic diagram of one embodiment of the evaporation source of this application. Figure 2 yes Figure 1 Side view of one embodiment of the evaporation source. Figure 3 yes Figure 1 Top view of one embodiment of the central splitter.

[0033] In this embodiment, the evaporation source 100 includes a flow guiding device 10 and a plurality of nozzles 20 disposed on the flow guiding device 10. The flow guiding device 10 includes a cavity 13 and a top wall 11 and an inner wall 12 that enclose the cavity 13 for guiding the gas to be evaporated. The flow guiding device 10 includes at least one flow divider 30 disposed between the top wall 11 and the cavity 13. The flow divider 30 includes a plurality of opening regions 31, and the opening ratio of the flow divider 30 is 20-40%. The plurality of nozzles 20 are disposed above the top wall 11 of the flow guiding device 10 and communicate with the cavity 13. The angle α between the central axis of the nozzle 20 and the height direction of the flow guiding device 10 is the nozzle tilt angle, which is greater than or equal to 10° and less than or equal to 25°.

[0034] In some embodiments, the inner wall 12 includes a bottom wall 122 disposed opposite to the top wall 11 and a side wall 121 connected at one end to the top wall 11. The side wall 121 is provided with a drainage pipe 40, and the end of the drainage pipe 40 away from the side wall 121 is connected to the crucible 50. The cavity 13 is connected to the crucible 50 through the drainage pipe 40 and is used to guide the gas to be evaporated generated in the crucible 50.

[0035] In some embodiments, the sidewall 121, the drain pipe 40, and the crucible 50 are integrally formed. In other embodiments, the sidewall 121, the drain pipe 40, and the crucible 50 can be welded together.

[0036] Specifically, the crucible 50 has a cavity containing a vapor deposition material. When the crucible 50 is heated, the vapor deposition material vaporizes to form a vapor deposition gas. The vapor deposition gas enters the cavity 13 of the flow guiding device 10 through the guide pipe 40. After being divided by the flow divider 30, a stable vapor pressure is formed in the cavity 13. Then, it is ejected through multiple nozzles 20 to vapor deposit the substrate.

[0037] In some specific embodiments, the vapor deposition material can be Yb (ytterbium), Mg (magnesium), Ag (aluminum), Cr (chromium), Au (gold), etc., and this application does not limit the comparison.

[0038] Understandably, the multiple openings 31 on the flow divider 30 can prevent the gas to be vaporized from entering the nozzle 20 only from the end of the flow guide 10 near the crucible 50, thereby improving the flowability of the gas to be vaporized in the cavity 13 so that the gas to be vaporized can be dispersedly ejected from multiple nozzles 20, thereby improving the uniformity of vaporization.

[0039] In some embodiments, the flow guiding device 10 may include a plurality of flow dividers 30, which are spaced apart between the top wall 11 and the cavity 13. Each flow divider 30 includes a plurality of opening areas 31, and the opening areas between adjacent flow dividers 30 are staggered.

[0040] Understandably, the orthographic projections of the opening regions 31 in the two adjacent diverter plates 30 onto the bottom wall should be as non-overlapping as possible, so that the gas to be vaporized can be diverted again in the space formed between the two adjacent diverter plates 30.

[0041] In some embodiments, the top wall 11 of the flow guiding device 10 is an inclined wall, and the angle b between the inclined wall and the horizontal direction is greater than or equal to 10° and less than or equal to 25°. The horizontal direction is perpendicular to the height direction of the flow guiding device. The nozzle 20 is vertically disposed on the inclined wall. The angle b is equal to the inclination angle of the nozzle 20.

[0042] Understandably, the nozzle 20 is set perpendicular to the inclined wall to avoid the gas to be vaporized getting stuck in the angle formed by the nozzle 20 and the inclined wall, thus avoiding the phenomenon of the gas to be vaporized forming holes and further improving the uniformity of vaporization.

[0043] In some embodiments, the flow guiding device 10 is a flow guiding pipe, the inclined wall is the upper surface of the cover of the flow guiding pipe, and the lower surface of the cover is a horizontal surface. The tilt angle of the nozzle 20 can be changed by changing the intersection angle (angle b) between the upper surface and the lower surface of the cover.

[0044] In some specific embodiments, the nozzle 20 and the cover are integrally formed.

[0045] Understandably, if the spray direction of the nozzle 20 relative to the substrate is to be changed, only the integrated cover needs to be replaced, without replacing the entire evaporation source 100. This reduces the maintenance and replacement costs of the evaporation source 100, thereby reducing the total cost of vapor deposition.

[0046] Please see Figure 4 and Figure 5 , Figure 4 This is a schematic diagram of the angle at which the material is ejected from an existing evaporation source. Figure 5 yes Figure 1 A schematic diagram showing the angle of the material ejected from the evaporation source. (See diagram below.) Figure 4 and Figure 5 As shown, a plurality of conductive pillars 90 are spaced apart on the substrate 80. Each conductive pillar 90 consists of a conductive top 91 and a pillar body 92. The projected area of ​​the main body at the connection between the pillar body 92 and the conductive top 91 is smaller than the projected area of ​​the conductive top 91.

[0047] The angle c of the material ejected by the existing evaporation source is in the range of 55 to 60°. Within this angle range, some material will be blocked by the conductive top 91, which will prevent the two ends of the cathode metal film layer 81 formed on the substrate 80 from overlapping with the pillar 92 of the conductive pillar 90. This will result in the cathodes between pixels not being continuously connected, thus causing problems such as pixels not being able to light up or poor pixel reliability (easy to form dark spots).

[0048] Unlike other embodiments, in this embodiment, the nozzle 20 has an inclined angle, which makes the spray path of the material ejected from the nozzle 20 inclined relative to the substrate 80. This reduces the probability that some material is blocked by the conductive top 91 of the conductive pillar 90, increases the deposition range of the material on the substrate 80, and allows the material to be deposited more fully onto the pillar 92 of the conductive pillar 90. This allows the two ends of the cathode metal film layer 81 to overlap onto the pillar 92, thereby achieving continuous connection of cathodes between pixels. This avoids the problem of pixels not being able to light up or poor pixel reliability (easily forming dark spots), thereby improving the display effect.

[0049] In some embodiments, the evaporation source 100 includes a heater. See also... Figure 6 and Figure 7 , Figure 6 This is a schematic diagram of one embodiment of an evaporation source equipped with a heater. Figure 7 yes Figure 6 Side view of one embodiment of the vapor deposition source.

[0050] Specifically, the evaporation source 100 includes a first heater 60 and a second heater 70, both of which are disposed on the outer wall corresponding to the side wall 121 of the flow guiding device 10. The first heater 60 is disposed near the top wall 11, and the second heater 70 is disposed near the bottom wall 122.

[0051] Understandably, by heating the gas to be vaporized flowing into the cavity 13 through the first heater 60 and the second heater 70, the temperature of the gas to be vaporized can be controlled so that the temperature of the gas to be vaporized in different areas is consistent, thereby forming a stable vapor pressure.

[0052] In some embodiments, the first heater 60 includes a first heating wire that is uniformly distributed in a rectangular wave pattern. The second heater 70 includes a second heating wire, wherein a first spacing between adjacent rectangular waves in the first heating wire is smaller than a second spacing between adjacent rectangular waves in at least a portion of the second heating wire.

[0053] Understandably, the first heating wire is denser than the second heating wire in order to achieve a higher temperature control and avoid condensation and blockage of the gas to be vaporized.

[0054] In a preferred embodiment, the second heating wire has three segments, with a spacing between each segment, and each segment of the second heating wire is a uniformly distributed rectangular wave shape.

[0055] The second heating wire has three sections to achieve different temperature controls in different areas of the cavity 13. Specifically, the first section of the second heating wire is close to the inlet pipe 40, where the gas to be vaporized has just entered the cavity 13 from the inlet pipe 40 and is still at a relatively high temperature, so the heating temperature of the first section of the second heating wire can be appropriately lowered; the third section of the second heating wire is far from the inlet pipe 40, where the temperature of the gas to be vaporized gradually decreases during the flow process, so the heating temperature of the third section of the second heating wire needs to be appropriately higher; the second section of the second heating wire is located between the first and third sections of the second heating wire, and its heating temperature can be between the heating temperatures of the first and third sections.

[0056] Understandably, by heating the vapor deposition gas in different areas of cavity 13 at different temperatures using three sections of second heating wire, the temperature of the vapor deposition gas in different areas can be kept consistent, thereby achieving control over the uniformity of the vapor deposition material.

[0057] In some embodiments, the evaporation source 100 further includes a driving device, and the flow guiding device 10 is disposed on the driving device. The driving device is used to drive the flow guiding device 10 to move in order to achieve linear scanning of the substrate.

[0058] The driving device can be a robotic arm.

[0059] Unlike existing technologies, this embodiment places the nozzle 20 on the top wall 11 of the flow guiding device 10, and makes the angle (tilt angle) formed between the central axis of the nozzle 20 and the height direction of the flow guiding device 10 greater than or equal to 10° and less than or equal to 25°. This allows the spray path of the material ejected from the nozzle 20 to be tilted relative to the substrate, reducing the probability of some material being blocked by the conductive top of the conductive pillar, increasing the deposition range of the material on the substrate, and allowing the material to be deposited more fully onto the conductive pillar, thereby achieving the overlap between the cathode metal film layer and the conductive pillar. Furthermore, by providing at least one flow divider 30 between the top wall 11 and the bottom wall 122, and by providing a first heater 60 and a second heater 70 on the outer wall of the flow guiding device 10, a stable vapor pressure can be formed in the flow guiding device 10, thereby improving the uniformity of vapor deposition. Through the above methods, this embodiment can achieve continuous connection of cathodes between pixels, thereby avoiding the problems of pixels not being able to light up or poor pixel reliability (easy to form dark spots), and thus improving the display effect.

[0060] Correspondingly, this application provides a vapor deposition apparatus, which includes a chamber and an evaporation source disposed within the chamber, the evaporation source being the aforementioned evaporation source. Please refer to [link to relevant documentation]. Figure 8 , Figure 8 This is a schematic diagram of the structure of the first embodiment of the vapor deposition apparatus of this application.

[0061] In this embodiment, the vapor deposition apparatus 200 includes two chambers 201 and 202 and an evaporation source 100 disposed in the chambers 201 and 202. The evaporation source 100 is the evaporation source described above. The evaporation source 100 includes a driving device that drives the evaporation source 100 to move along the arrow in the figure to achieve vapor deposition on the substrate 80 placed above the evaporation source 100.

[0062] Among them, chambers 201 and 202 are both metal chambers (MC).

[0063] In this configuration, the nozzles of the evaporation source 100 in the two chambers 201 and 202 are arranged facing each other.

[0064] Specifically, the driving device in the first chamber 201 prioritizes driving the evaporation source 100 to perform a linear scan, and performs a first evaporation on the substrate 80 through the nozzle, enabling one end of the cathode metal film layer to overlap with the conductive pillar. Then, the substrate 80 is removed and placed in the second chamber 202, where the driving device drives the evaporation source 100 to perform a linear scan, and performs a second evaporation on the substrate 80 through an evaporation nozzle with the opposite direction to the first evaporation nozzle, enabling the other end of the cathode metal film layer to overlap with the conductive pillar, thereby achieving continuous overlap of the cathodes between pixels.

[0065] In a specific implementation scenario, the nozzle of the evaporation source 100 in chamber 201 is positioned to the right, and the nozzle of the evaporation source 100 in chamber 202 is positioned to the left. The evaporation source 100 is driven by the driving device in chamber 201 to perform a linear scan of the substrate 80, allowing the right-facing nozzle to overlap the right end of the cathode metal film onto the conductive pillar. Then, the substrate 80 is removed and placed in chamber 202, and the driving device drives the evaporation source 100 to perform a linear scan of the substrate 80, allowing the left-facing nozzle to overlap the left end of the cathode metal film onto the conductive pillar, thereby achieving continuous cathode overlap between pixels.

[0066] Understandably, by performing vapor deposition on the substrate 80 through two chambers 201 and 202, the vapor deposition material can be more evenly distributed on the substrate 80.

[0067] In other embodiments, only one metal chamber may be provided, and the vapor deposition source may be moved by a drive device to achieve vapor deposition on the substrate.

[0068] Understandably, since the nozzle of the evaporation source 100 has a certain tilt angle, the spray path of the material ejected from the nozzle is tilted relative to the substrate 80, which reduces the probability that some material is blocked by the conductive top of the conductive pillar, increases the deposition range of the material on the substrate 80, so that the material is more fully deposited on the conductive pillar, thereby realizing the overlap between the cathode metal film layer and the conductive pillar.

[0069] Correspondingly, this application provides a vapor deposition method. The vapor deposition method utilizes the aforementioned vapor deposition apparatus to perform vapor deposition on a substrate.

[0070] Specifically, the substrate is first placed in the first chamber 201, and the evaporation source is driven by a driving device to perform a linear scan for initial evaporation deposition on the substrate. Then, the substrate is removed and placed in the second chamber 202, and the evaporation source is driven by a driving device to perform a linear scan for secondary evaporation deposition on the substrate, so that the formed cathode metal film layer overlaps with the conductive pillar.

[0071] Understandably, since the nozzle of the evaporation source has a certain tilt angle, the spray path of the material ejected from the nozzle is tilted relative to the substrate, which reduces the probability that some material is blocked by the conductive top of the conductive pillar, increases the deposition range of the material on the substrate, and allows the material to be deposited more fully on the conductive pillar, thereby realizing the overlap between the cathode metal film layer and the conductive pillar.

[0072] Unlike other implementations, this application, by placing the nozzle on the top wall of the flow guiding device and ensuring that the angle (tilt angle) formed between the central axis of the nozzle and the height direction of the flow guiding device is greater than or equal to 10° and less than or equal to 25°, allows the spray path of the material ejected from the nozzle to be tilted relative to the substrate. This reduces the probability of some material being blocked by the conductive top of the conductive pillar, increases the deposition range of the material on the substrate, and allows the material to be deposited more fully onto the conductive pillar, thereby achieving the overlap between the cathode metal film layer and the conductive pillar. Furthermore, by providing at least one flow divider between the top and bottom walls and by providing a first heater and a second heater on the outer wall of the flow guiding device, a stable vapor pressure can be formed in the flow guiding device, thereby improving the uniformity of vapor deposition. Through the above methods, this application can achieve continuous connection of cathodes between pixels, thereby avoiding the problems of pixels failing to light up or poor pixel reliability (easily forming dark spots), and thus improving the display effect.

[0073] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. An evaporation source, characterized in that The evaporation source comprises: a flow guide device, the flow guide device comprising a cavity and a top wall and an inner wall enclosing the cavity, for guiding the flow of a to-be-evaporated gas; wherein the flow guide device comprises at least one flow distribution plate, the flow distribution plate being arranged between the top wall and the cavity; the flow distribution plate comprises a plurality of opening regions, and the opening rate of the flow distribution plate is 20-40%; a plurality of nozzles arranged on the top wall of the flow guide device and in communication with the cavity; wherein the angle between the central axis of the nozzle and the height direction of the flow guide device is the inclination angle of the nozzle, the inclination angle being greater than or equal to 10° and less than or equal to 25°; the top wall of the flow guide device is an inclined wall, the angle between the inclined wall and the horizontal direction being greater than or equal to 10° and less than or equal to 25°; wherein the horizontal direction is perpendicular to the height direction of the flow guide device; wherein the nozzle is arranged vertically on the inclined wall; the flow guide device is a flow guide pipe, the inclined wall is the upper surface of the cover of the flow guide pipe, the lower surface of the cover is a horizontal surface, and the inclination angle is changed by changing the intersection angle between the upper surface of the cover and the lower surface of the cover.

2. The evaporation source according to claim 1, wherein the flow guide device comprises a plurality of flow distribution plates, the plurality of flow distribution plates being arranged at intervals between the top wall and the cavity; wherein each flow distribution plate comprises a plurality of opening regions, and the opening regions between adjacent two flow distribution plates are arranged alternately.

3. The evaporation source according to claim 1, wherein the inner wall comprises a side wall and a bottom wall; the side wall is provided with a flow guide pipe, one end of the flow guide pipe away from the side wall being connected with a crucible.

4. The evaporation source according to claim 3, wherein the side wall, the flow guide pipe and the crucible are integrally formed.

5. The evaporation source according to claim 4, wherein the evaporation source further comprises a driving device, the flow guide device being arranged on the driving device, and the driving device being used to drive the flow guide device to move.

6. The evaporation source according to claim 4, wherein the evaporation source comprises a first heater and a second heater, the first heater and the second heater being arranged on the corresponding outer walls of the side wall; wherein the first heater is arranged close to the top wall, and the second heater is arranged close to the bottom wall.

7. The evaporation source according to claim 6, wherein the first heater comprises a first heating wire, the first heating wire being in the shape of a uniformly distributed rectangular wave; the second heater comprises a second heating wire, and the first spacing between adjacent two rectangular waves in the first heating wire is smaller than the second spacing between adjacent two rectangular waves in at least part of the second heating wire.

8. The evaporation source according to claim 7, wherein the second heating wire has three sections, and each section of the second heating wire is arranged with a spacing, and each section of the second heating wire is in the shape of a uniformly distributed rectangular wave.

9. An evaporation apparatus comprising a chamber and an evaporation source arranged in the chamber, characterized in that The evaporation source is the evaporation source according to any one of claims 1-8.

10. The evaporation device according to claim 9, wherein The evaporation device comprises two chambers; The nozzles of the evaporation sources in the two chambers are oppositely arranged.

11. An evaporation method, characterized by, The evaporation device as claimed in claim 9 or 10 is used for evaporating a substrate.

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