RPD Coating Device

Abstract

The present invention discloses an RPD coating device, which includes a coating chamber, a furnace chamber, a plasma generator, a conveying mechanism and a gas supply mechanism. The gas supply mechanism includes a gas supply main body, and the gas supply main body is located on the side of the furnace chamber facing the conveying mechanism. The gas supply main body has exhaust holes for discharging reaction gas towards the furnace chamber, and the gas supply main body has a reaction chamber penetrating along the arrangement direction of the furnace chamber and the conveying mechanism. In the present invention, the gas supply main body is arranged in the high-temperature sublimation area near the target ingot, and the exhaust holes diffuse the reaction gas towards the furnace chamber. The reaction gas diffuses to near the center of the furnace chamber. By means of the high heat of the furnace chamber, the dissociation of oxygen in the reaction gas can be promoted, which can effectively improve the dissociation degree of oxygen and the uniformity of distribution on the substrate to be coated, reduce the influence of the uneven oxygen content ratio in different regions of the film on the substrate to be coated caused by the deviation of ions under the action of the magnetic field, and further improve the uniformity of the thickness and sheet resistance of the film deposited on the substrate to be coated.

Description

Technical Field

[0001] The present invention relates to the technical field of solar photovoltaic coating, and in particular to an RPD coating device. Background Art

[0002] The principle of RPD (Reactive Plasma Deposition) plasma deposition coating is to bombard the surface of the target ingot with a plasma beam. In a vacuum environment, the sublimated target material ions are activated in the plasma region to form an ionic state, and react with the introduced reaction gas to form a thin film deposited on the surface of the substrate. In related technologies, the ionization rates of different reaction gases are different. For example, the dissociation degree of oxygen is much lower than that of other gases. Since the gas ions are deflected by the magnetic field in the coating chamber, the oxygen content ratio in the area where the thin film is deposited on the substrate is uneven, affecting the uniformity of the thickness and sheet resistance of the thin film deposition. Summary of the Invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. For this purpose, the present invention provides an RPD coating device, which can improve the dissociation degree of oxygen, as well as the uniformity of the deposition thickness and sheet resistance of the thin film.

[0004] According to the RPD coating device in the embodiment of the present invention, it includes:

[0005] A coating chamber with a vacuum cavity inside;

[0006] A furnace, partially located in the vacuum cavity, for loading and heating the target ingot;

[0007] A plasma generator, located on the side of the coating chamber, and emitting a plasma beam into the vacuum cavity;

[0008] A transfer mechanism for loading the substrate to be coated, and the transfer mechanism is disposed opposite to the furnace;

[0009] A gas supply mechanism, the gas supply mechanism includes a gas supply main body, the gas supply main body is located on the side of the furnace facing the transfer mechanism, the gas supply main body has an exhaust hole for discharging the reaction gas towards the furnace, and the gas supply main body has a reaction cavity penetrating along the arrangement direction of the furnace and the transfer mechanism.

[0010] The RPD coating device according to the embodiment of the present invention has at least the following beneficial effects:

[0011] In the embodiments of the present invention, the gas delivery main body is arranged in the high-temperature sublimation area close to the target ingot, and the exhaust holes face the furnace chamber to diffuse the reaction gas. After the reaction gas is discharged from the gas delivery main body, it diffuses to the vicinity of the center of the furnace chamber. The high heat of the furnace chamber promotes the dissociation of oxygen in the reaction gas, which can effectively improve the dissociation degree of oxygen and the uniformity of its distribution on the substrate to be coated, reduce the influence of the uneven oxygen content ratio in different regions of the film on the substrate to be coated caused by the ions being deflected under the action of the magnetic field, and further improve the uniformity of the thickness and sheet resistance of the film deposited on the substrate to be coated.

[0012] According to some embodiments of the present invention, the gas delivery main body is annular and located directly above the furnace chamber.

[0013] According to some embodiments of the present invention, the gas delivery main body at least includes a gas delivery part in a ring shape, a spiral shape, a curved shape or a grid shape.

[0014] According to some embodiments of the present invention, the exhaust holes are arranged on the side of the gas delivery main body facing the furnace chamber and face the center of the furnace chamber.

[0015] According to some embodiments of the present invention, the gas delivery main body surrounds the periphery of the plasma beam.

[0016] According to some embodiments of the present invention, in the arrangement direction of the furnace chamber and the conveying mechanism, the gas delivery main body is located between the plasma generator and the furnace chamber.

[0017] According to some embodiments of the present invention, the gas delivery mechanism is rotatably and / or movably connected to the inner wall of the coating chamber.

[0018] According to some embodiments of the present invention, the RPD coating device further includes a compensation plate. The compensation plate protrudes from the inner wall of at least one side of the coating chamber. A coating opening is defined between the opposite compensation plates or between the compensation plate and the opposite inner wall of the coating chamber, and the substrate to be coated is exposed at the coating opening.

[0019] According to some embodiments of the present invention, the gas delivery mechanism further includes a support main body. The support main body is detachably connected to the inner wall of the coating chamber, and the support main body is connected to the gas delivery main body.

[0020] According to some embodiments of the present invention, the inner wall of the coating chamber is covered with a shielding plate. The gas delivery mechanism further includes a support main body. The support main body is installed on the shielding plate, and the support main body is connected to the gas delivery main body.

[0021] Additional aspects and advantages of the present invention will be given in part in the following description, become apparent in part from the following description, or be learned through the practice of the present invention. Description of the Drawings

[0022] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, where:

[0023] Figure 1 It is a working schematic diagram of an embodiment of the RPD coating device of the present invention;

[0024] Figure 2 It is a three-dimensional schematic diagram of an embodiment of the RPD coating device of the present invention;

[0025] Figure 3 It is a schematic diagram of an embodiment of the gas delivery mechanism;

[0026] Figure 4 It is a schematic diagram of different embodiments of the gas delivery part.

[0027] Reference numerals:

[0028] Substrate to be coated 10, coating chamber 100, vacuum chamber 110, shutter 120, coating port 130, compensating plate 140, furnace chamber 200; plasma generator 300; transfer mechanism 400; gas delivery mechanism 500, gas delivery main body 510, exhaust hole 511, reaction chamber 512, gas delivery part 513, support main body 520; target ingot 600. Detailed implementation manners

[0029] The embodiments of the present invention will be described in detail below. The examples of the embodiments are shown in the accompanying drawings, where the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary and are only used to explain the present invention and should not be construed as a limitation to the present invention.

[0030] In the description of the present invention, it should be understood that for the orientation description, such as the orientation or positional relationship indicated by up, down, front, back, left, right, etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.

[0031] In the description of the present invention, the meaning of several is more than one, the meaning of multiple is more than two, greater than, less than, exceeding, etc. are understood as not including the present number, and above, below, within, etc. are understood as including the present number. If there is a description of first and second, it is only for the purpose of distinguishing technical features and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the sequence relationship of the indicated technical features.

[0032] In the description of the present invention, unless otherwise clearly defined, terms such as "arrangement", "installation", and "connection" should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific content of the technical solution.

[0033] In the description of the present invention, the descriptions with reference to terms such as "one embodiment", "some embodiments", "schematic embodiments", "examples", "specific examples", or "some examples" mean that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0034] For an RPD coating device, the plasma generator dissociates argon gas into argon ions to excite a large number of electrons. The target ingot serves as the anode, causing the electrons to enter the coating cavity under the action of the magnetic field and electric field and deflect towards the target ingot, forming a high-density electron beam. The electron beam is focused on the surface of the target ingot in the furnace by the beam director. After the target ingot is heated, it directly sublimes into the gas phase. When the gas-phase particles pass through the plasma region, the target material molecules collide with the electrons, the molecular bonds are broken, atoms are ionized, the gas-phase particles are dissociated into an ionic state, and react with the gas introduced into the coating cavity. After the reaction, it is deposited on the substrate to form a thin film. The reaction gas will also be dissociated in the plasma region, and the reaction gas usually includes multiple gases. The ionization rates of different gases in the coating cavity are different. Taking the reaction gas including oxygen and argon as an example, the energy of the electrons is not sufficient to excite the dissociation of oxygen atoms. Therefore, the ionization rate of oxygen is much lower than the ionization rate of other atoms being dissociated. The distributions of oxygen atoms and oxygen ions participating in the deposition on the substrate surface are different. The sheet resistance in the region where the oxygen distribution is thinner is lower, and the sheet resistance in the region where the oxygen distribution is thicker is higher, resulting in differences in the sheet resistance distribution above the thin film. Based on the differences in ionization rates, when the ion distributions of different reaction gases reach the substrate, there will be different concentration distributions, resulting in differences in the thickness of the deposited thin film in different regions, and the uniformity of the thin film thickness and sheet resistance on the substrate cannot be guaranteed.

[0035] Refer to Figures 1 to 3The RPD coating device includes a coating chamber 100, a furnace 200, a plasma generator 300, a conveying mechanism 400 and a gas delivery mechanism 500. The coating chamber 100 has a vacuum chamber 110 inside to provide a vacuum coating environment for the substrate 10 to be coated. At least part of the furnace 200 is located in the vacuum chamber 110. The furnace 200 is used to load and heat the target ingot 600, and the target ingot 600 is placed in the coating atmosphere inside the coating chamber 100. The plasma generator 300 is located at the side of the coating chamber 100 and is used to emit a plasma beam into the vacuum chamber 110. The plasma beam acts on the target ingot 600 to sublime the particles of the target ingot 600. The conveying mechanism 400 is used to load the substrate 10 to be coated. The conveying mechanism 400 is arranged opposite to the furnace 200, so that the sublimated particles of the target ingot 600 loaded in the furnace 200 can be directly The target material is directly deposited toward the substrate 10 to be plated, shortening the movement distance of the target material molecules and reducing the influence of the disturbance of the target material molecules during the movement on the coating thickness of the substrate 10 to be plated; the gas delivery mechanism 500 is used to deliver the reaction gas to the vacuum chamber 110, and the gas delivery mechanism 500 includes a gas delivery body 510, which is arranged inside the coating chamber 100 and is located on the side of the furnace 200 facing the conveying mechanism 400. The gas delivery body 510 has an exhaust hole 511, and the reaction gas diffuses toward the furnace 200 through the exhaust hole 511 and passes into the vacuum chamber 110. The gas delivery body 510 has a reaction chamber 512 that runs through the arrangement direction of the furnace 200 and the conveying mechanism 400, which is used for sublimated or reacted particles, ionized atoms, unionized gas molecules, electrons, etc. to pass through the reaction chamber 512 and deposit on the coating substrate.

[0036] The target ingot 600 serves as an anode and can be heated. Under the support of the magnetic field and the electric field, the high-density plasma beam emitted by the plasma generator 300 turns and deflects toward the target ingot 600 after entering the vacuum chamber 110, and forms a plasma region during the movement. The plasma beam converges on the surface of the target ingot 600 in the furnace 200. The surface of the target ingot 600 is heated and bombarded to sublimate into gaseous target material particles. The target material particles pass through the plasma region and collide with the electrons in the plasma beam to be dissociated into an ion state, and react with the introduced reaction gas in the plasma region. In the present application, the gas delivery body 510 is arranged in a high-temperature sublimation area close to the target ingot 600, and the exhaust hole 511 diffuses the reaction gas toward the furnace 200. After being discharged from the gas delivery body 510, the reaction gas diffuses to the vicinity of the center of the furnace 200. The high heat of the furnace 200 promotes the dissociation of oxygen in the reaction gas, which can effectively improve the dissociation degree of oxygen and the uniformity of distribution on the substrate 10 to be plated, reduce the influence of uneven oxygen content in different blocks of the thin film on the substrate 10 to be plated caused by the deflection of ions under the action of the magnetic field, and thus improve the thickness and uniformity of the square resistance of the thin film deposited on the substrate 10 to be plated.

[0037] In addition, arranging the gas transmission main body 510 between the furnace chamber 200 and the conveying mechanism 400 can prevent the gas transmission main body 510 and the furnace chamber 200 from having the same electric potential, which may cause the plasma beam to converge and form interference.

[0038] Referring to Figure 4 , the gas transmission main body 510 at least includes a gas transmission part 513 in a ring shape, a spiral shape, a curve shape or a grid shape, and the exhaust holes 511 are arranged on the gas transmission part 513. As shown in Figure 4 Figure (a), when the gas transmission part 513 is in a spiral shape, the gap between adjacent turns forms a reaction chamber 512, and the exhaust holes 511 are arranged as slits extending along the spiral direction of the gas transmission part 513, or a plurality of exhaust holes 511 are provided and arranged at intervals along the spiral direction of the gas transmission part 513. Thus, the reaction gas discharged from the exhaust holes 511 has a large distribution range and can diffuse to different regions on the side of the furnace chamber 200 facing the conveying mechanism 400, and the reaction chamber 512 does not block the deposition of various particles during the reaction. Or, as shown in Figure 4 Figure (b), the gas transmission part 513 is in a grid shape, and a plurality of reaction chambers 512 are formed through different grids. The exhaust holes 511 are arranged as slits extending along the intersection direction of the gas transmission part 513, or a plurality of exhaust holes 511 are provided and arranged at intervals along the intersection direction of the gas transmission part 513; or, as shown in Figure 4 Figure (c), the gas transmission part 513 is in a curve shape. The gas transmission part 513 includes a plurality of continuous curve segments. There is a gap between the curve segments arranged side by side in a certain direction and a reaction chamber 512 is formed. The exhaust holes 511 are arranged as slits extending along the extension direction of the gas transmission part 513, or a plurality of exhaust holes 511 are provided and arranged at intervals along the extension direction of the gas transmission part 513. Or, as shown in Figure 4 Figure (d), the gas transmission part 513 is in a ring shape, and a plurality of gas transmission parts 513 are provided. The adjacent gas transmission parts 513 are nested with each other. There is a gap between the adjacent gas transmission parts 513 and a reaction chamber 512 is formed. Each gas transmission part 513 is provided with exhaust holes 511, and the exhaust holes 511 are arranged as slits extending along the extension direction of the gas transmission part 513, or a plurality of exhaust holes 511 are provided and arranged at intervals along the extension direction of the gas transmission part 513.

[0039] It should be noted that the interior of the gas delivery main body 510 has a channel for the reaction gas to flow, and the channel is communicated with the exhaust holes 511. The reaction gas has a certain flow pressure within the gas delivery main body 510. When the exhaust holes 511 are arranged in a slit shape, the reaction gas is accelerated when passing through the exhaust holes 511 and has an impact force towards the furnace chamber 200, enabling the reaction gas to approach the high-temperature region of the furnace chamber 200 to the maximum extent and promoting the dissociation of oxygen in the reaction gas. Additionally, when a plurality of exhaust holes 511 are provided and arranged at intervals along the extending direction of the gas delivery part 513, the reaction gas can be evenly diffused into the furnace chamber 200 through the exhaust holes 511. On the one hand, the dissociation degree of oxygen in the reaction gas is increased, and on the other hand, the particles of the dissociated reaction gas are evenly distributed, avoiding the deviation of ions due to the magnetic field effect and the uneven deposition ratio in different regions of the substrate to be plated 10.

[0040] In one embodiment of the present application, as Figure 3 shown, the gas delivery main body 510 is annular. The gas delivery main body 510 can be a closed or non-closed structure, that is, the gas delivery main body 510 is set as a closed ring or an open semi-ring. When the gas delivery main body 510 is annular, its cross-section can be a circle, an ellipse or a polygon. It can be understood that since the gas delivery main body 510 is set as annular, the deposition of particles in the plasma region towards the substrate to be plated 10 can be avoided to the maximum extent, reducing the interception of reaction gas particles and target material particles, and making the deposition ratio of each particle in different regions of the substrate to be plated 10 more uniform. Further, the particles formed after the sublimation of the cylindrical target ingot 600 are distributed in an inverted conical region. In one embodiment, the gas delivery main body 510 is set as a circular ring to match the distribution pattern of the target material particles, facilitating the reaction between the dissociated reaction gas particles and the target material particles.

[0041] For a horizontal RPD coating device, the gas delivery main body 510 is located directly above the furnace chamber 200, the target ingot 600 is located at the center of the furnace chamber 200 in the horizontal direction, the plasma beam emitted by the plasma generator 300 enters the vacuum chamber 110 from the side of the coating chamber 100, deflects downward, and sprays onto the high-temperature surface of the central target ingot 600 in the furnace chamber 200. The ions sublimated from the surface of the target ingot 600 are deposited upward and collide and dissociate with the electrons in the plasma beam within the plasma region. The gas delivery main body 510 is set as a circular ring, and the center of the gas delivery main body 510 is collinear with the center of the furnace chamber 200, enabling the reaction gas discharged from the gas delivery main body 510 to be evenly diffused into the central region of the furnace chamber 200 and be fully dissociated by the high heat.

[0042] The gas delivery mechanism 500 further includes a support body 520. One end of the support body 520 is connected to the gas delivery main body 510, which is connected to the inner wall of the coating chamber 100. The support body 520 can extend in the vertical direction or the horizontal direction. For example, when the support body 520 extends in the vertical direction, the bottom end of the support body 520 is connected to the inner wall of the bottom of the coating chamber 100, and the top end of the support body 520 is connected to and supports the gas delivery main body 510, so as to mount the gas delivery main body 510 above the furnace chamber 200; or, when the support body 520 extends in the horizontal direction, one end of the support body 520 is connected to the inner wall of the side of the coating chamber 100, the other end of the support body 520 is connected to the gas delivery main body 510, and the support body 520 is in a cantilever state, suspending the gas delivery main body 510 above the furnace chamber 200.

[0043] The interior of the support body 520 has a channel for the reaction gas to flow through, and this channel is in communication with the channel inside the gas delivery main body 510. When the gas delivery main body 510 is arranged in a ring shape, the gas delivery main body 510 is formed by bending a hollow pipe. One end of the gas delivery main body 510 is connected to the end of the support body 520, and the internal channels are in communication with each other, and the other end is suspended; or, there are two support bodies 520, and the two support bodies 520 are respectively connected to both ends of the gas delivery main body 510. One of the support bodies 520 introduces the reaction gas into the gas delivery main body 510. The reaction gas flows through the gas delivery main body 510 and diffuses out through the exhaust holes 511. The remaining reaction gas flows back through the other support body 520. In this way, the reaction gas is transmitted from the support body 520 to the gas delivery main body 510 and flows from the end where the gas delivery main body 510 is connected to the support body 520 to the other end. The flow path of the reaction gas is unidirectional, avoiding simultaneously inputting the reaction gas from both ends of the gas delivery main body 510, resulting in the collision of the two airflows inside the gas delivery main body 510 and the formation of turbulence, which causes the reaction gas to be unable to diffuse evenly.

[0044] The exhaust holes 511 are arranged on the side of the gas delivery main body 510 facing the furnace chamber 200 and are directed towards the center of the furnace chamber 200. In this way, the reaction gas discharged from the exhaust holes 511 can diffuse towards the center of the furnace chamber 200 and directly spray onto the surface of the target ingot 600 in the center of the furnace chamber 200, promoting dissociation with the help of high heat and high kinetic energy. It should be noted that for a horizontal RPD coating device where the gas delivery main body 510 does not belong to a separate annular structure, when multiple exhaust holes 511 are not arranged on a circumference with the same radius, the distances of the exhaust holes 511 on different circumferences from the center of the furnace chamber 200 in the radial direction are different, and the inclination angles of the exhaust holes 511 are also different, so that each exhaust hole 511 is directed towards the center of the furnace chamber 200; it can be understood that in the radial direction of the furnace chamber 200 (i.e., the horizontal direction of the horizontal RPD coating device), the exhaust holes 511 farther from the center of the furnace chamber 200 have a larger inclination angle towards the center of the furnace chamber 200, and the exhaust holes 511 closer to the center of the furnace chamber 200 have a smaller inclination angle towards the center of the furnace chamber 200.

[0045] In addition, during the transmission of the reaction gas, it flows from one end of the gas delivery main body 510 to the other end. The flow path of the reaction gas is set as the extension trajectory of the gas delivery main body 510 or flows from the side close to the support main body 520 to the side far from the support main body 520. The position where the reaction gas first flows into the gas delivery main body 510 is defined as the proximal end, and the position where the reaction gas last flows into the gas delivery main body 510 is the distal end. The gas concentration and flow rate of the reaction gas at the proximal end are greater than those at the distal end. To make the amount of the reaction gas discharged from each exhaust hole 511 of the gas delivery main body 510 consistent, the exhaust holes 511 located at the distal end are arranged more densely, the exhaust holes 511 located at the proximal end are arranged more sparsely, or the inner diameter of the exhaust holes 511 located at the distal end is greater than the inner diameter of the exhaust holes 511 located at the proximal end.

[0046] It can be understood that in the arrangement direction of the furnace chamber 200 and the conveying mechanism 400, the gas delivery main body 510 should be located between the plasma generator 300 and the furnace chamber 200. Thus, when the plasma beam emitted by the plasma generator 300 deflects towards the target ingot 600, a plasma region is formed above the furnace chamber 200 (the side of the furnace chamber 200 facing the conveying mechanism 400). The gas delivery main body 510 is located within the plasma region. The reaction gas diffusing from the gas delivery main body 510 can utilize the high temperature of the furnace chamber 200, fully contact and collide with the electrons in the plasma region, and dissociate, so as to improve the dissociation degree of the reaction gas, enable the dissociated reaction gas particles to fully react with the target particles, and quickly deposit on the substrate to be coated 10.

[0047] In addition, the gas supply main body 510 surrounds the periphery of the plasma beam. Since the reaction gas discharged from the gas supply main body 510 diffuses towards the center of the furnace chamber 200, the diffusion direction of the reaction gas is exactly towards the plasma region. Thus, the reaction gas can collide with the electrons in the plasma beam and dissociate, improving the dissociation degree of oxygen in the reaction gas. It can be understood that when the plasma beam deflects and sprays downward towards the target ingot 600, the diameter of the plasma beam gradually shrinks. By arranging the gas supply main body 510 at the periphery of the plasma beam, on the one hand, it enables the reaction gas to have a larger diffusion range and diffusion amount, and on the other hand, it enables the reaction gas to fully react in the plasma region, ensuring the dissociation rate.

[0048] In one embodiment, the gas supply mechanism 500 is rotatably and / or movably connected to the inner wall of the coating chamber 100. The connection manner between the gas supply mechanism 500 and the coating chamber 100 can, but is not limited to, installing a driving mechanism on the inner wall of the coating chamber 100. The gas supply mechanism 500 is connected to the driving mechanism, and the driving mechanism can drive the gas supply mechanism 500 to rotate and / or move. The driving mechanism is set as a power component such as a rotary motor, a linear motor, a ball screw, a motor, or a combination of multiple power components; or, the gas supply mechanism 500 is installed on the inner wall of the coating chamber 100 in a detachable manner, and the gas supply mechanism 500 is moved and / or rotated relative to the inner wall of the coating chamber 100 by disassembling and assembling the gas supply mechanism 500. This detachable connection manner is not limited to threaded connection, snap connection, etc. By rotating and / or moving the gas supply mechanism 500, the position and inclination angle of the gas supply main body 510 can be changed, and further the diffusion direction and diffusion area of the reaction gas can be changed to match the dissociation and distribution requirements of oxygen, so that there is a high oxygen concentration in the dissociation area, maximizing the promotion of oxygen dissociation and equalizing the sheet resistance distribution of the thin film on the substrate 10 to be coated.

[0049] Furthermore, one end of the support main body 520 is connected to the gas supply main body 510, and the other end is detachably connected to the inner wall of the coating chamber 100 to place the gas supply main body 510 above the furnace chamber 200 and enable post-maintenance such as cleaning and replacement of the gas supply mechanism 500 by disassembling and assembling the support main body 520.

[0050] In one embodiment of the present application, the inner wall of the coating chamber 100 is covered with a shielding plate 120. The shielding plate 120 is detachably connected to the inner wall of the coating chamber 100. The shielding plate 120 is used to shield the inner wall of the coating chamber 100 to prevent the inner wall of the coating chamber 100 from being contaminated by gas deposition. The support main body 520 is installed on the shielding plate 120. By disassembling and assembling the shielding plate 120, the shielding plate 120 and the gas supply mechanism 500 can be replaced simultaneously and reserved after sandblasting and cleaning, making the post-maintenance of the RPD coating device more convenient.

[0051] The transfer mechanism 400 is arranged to be able to convey the substrate to be plated 10, so that the substrate to be plated 10 passes through the coating chamber 100 in sequence for coating. The transmission mode of the transfer mechanism 400 is not limited to rollers, belts, etc. The side wall of the coating chamber 100 facing the furnace chamber 200 is in an open state, so that the surface of the substrate to be plated 10 facing the furnace chamber 200 is exposed, for the reaction gas particles and the target material particles to deposit on the surface of the substrate to be plated 10 after reaction. The distance between the target ingot 600 and the area of the substrate to be plated 10 directly above the target ingot 600 is short, and the distance from the edge of the substrate to be plated 10 is long. Therefore, the deposited film thickness in the central area of the substrate to be plated 10 is thicker than that at the edge, which is likely to cause uneven film deposition thickness. Based on this, the RPD coating device in this application further includes a compensation plate 140. The compensation plate 140 protrudes from the inner wall of at least one side of the coating chamber 100. The coating opening 130 is defined between the opposite compensation plates 140 or between the compensation plate 140 and the opposite inner wall of the coating chamber 100. The substrate to be plated 10 can be exposed at the coating opening 130. The exposed area of the substrate to be plated 10 is concentrated directly above the furnace chamber 200. As the substrate to be plated 10 continues to move, the reaction gas particles and the target material particles can always deposit on the area of the substrate to be plated 10 directly above the furnace chamber 200, improving the uniformity of the film thickness.

[0052] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those of ordinary skill in the art, various changes can be made without departing from the gist of the present invention. In addition, without conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

Claims

1. RPD coating device, characterized in that, Comprising: A coating chamber with a vacuum cavity inside; A furnace, partially located within the vacuum cavity, for loading and heating a target ingot; A plasma generator, located on the side of the coating chamber and emitting a plasma beam into the vacuum cavity; A transfer mechanism for loading a substrate to be coated, the transfer mechanism being disposed opposite to the furnace; A gas delivery mechanism, the gas delivery mechanism comprising a gas delivery main body, the gas delivery main body being located on the side of the furnace facing the transfer mechanism, in the arrangement direction of the furnace and the transfer mechanism, the gas delivery main body being located between the plasma generator and the furnace and close to the high-temperature sublimation region of the target ingot, the gas delivery main body having exhaust holes for discharging reaction gas towards the furnace, and the gas delivery main body having a reaction cavity penetrating in the arrangement direction of the furnace and the transfer mechanism.

2. The RPD coating device according to claim 1, wherein The gas delivery main body is annular and located directly above the furnace.

3. The RPD coating device according to claim 1, characterized in that, The gas delivery main body at least comprises a gas delivery part in an annular, spiral, curved or grid shape.

4. The RPD coating device according to claim 1, characterized in that, The exhaust holes are provided on the side of the gas delivery main body facing the furnace and face the center of the furnace.

5. The RPD coating device according to any one of claims 1 to 4, characterized in that, The gas delivery main body surrounds the periphery of the plasma beam.

6. The RPD coating device according to claim 1, wherein The gas delivery mechanism is rotatably and / or movably connected to the inner wall of the coating chamber.

7. The RPD coating device according to claim 1, characterized in that, The RPD coating device further comprises a compensating plate, the compensating plate protruding from the inner wall of at least one side of the coating chamber, a coating opening being defined between the opposite compensating plates or between the compensating plate and the opposite inner wall of the coating chamber, and the substrate to be coated being exposed at the coating opening.

8. The RPD coating device according to claim 1, wherein, The gas delivery mechanism further comprises a support main body, the support main body being detachably connected to the inner wall of the coating chamber, and the support main body being connected to the gas delivery main body.

9. The RPD coating device according to claim 1, characterized in that, The inner wall of the coating chamber is covered with a shielding plate, the gas delivery mechanism further comprises a support main body, the support main body being mounted on the shielding plate, and the support main body being connected to the gas delivery main body.

Images