A multi-directional source capacitively coupled plasma source apparatus and processing method thereof
By employing multi-directional capacitive electrodes and independent control technology in the capacitively coupled plasma source device, the problems of uneven plasma distribution and poor controllability were solved, resulting in better plasma uniformity and multi-mode states, and improving the material processing effect.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- UNIV OF SCI & TECH OF CHINA
- Filing Date
- 2023-09-25
- Publication Date
- 2026-05-08
AI Technical Summary
Existing capacitively coupled plasma devices suffer from insufficient plasma distribution uniformity and poor controllability, which affect the uniformity and stability of material etching and coating processes.
A multi-directional source capacitively coupled plasma source device is designed, which employs multiple circular capacitor electrodes arranged at equal intervals in a vacuum cavity, and achieves independent control of each side through control switches and radio frequency power supply, enabling adjustment of electrode spacing and number to form multiple discharge modes.
It achieves omnidirectional distribution control and multi-mode states of plasma, improves plasma uniformity and controllability, and enhances the effectiveness and reliability of material processing.
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Figure CN117295222B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the fields of crystal and semiconductor manufacturing technology, and in particular to a multi-directional source capacitively coupled plasma source device and its processing method. Background Technology
[0002] With the widespread application of plasma in crystal processing, semiconductor manufacturing, and other fields, plasma devices, represented by dielectric barrier discharge, inductively coupled plasma discharge (ICP-D), and capacitively coupled plasma discharge (CCP-D), have received widespread attention. Currently, achieving uniformity in plasma coating and material etching processes is a key issue in semiconductor and integrated circuit industrial applications. In a low-pressure environment within a vacuum chamber, an RF power supply excites the introduced gas to generate active particles such as electrons, ions, and free radicals, forming plasma. The plasma undergoes various chemical and physical reactions with the surface of the etched or coated material, thereby enhancing the surface properties. Better plasma uniformity results in more uniform and stable material processing effects. Therefore, compared to dielectric barrier discharge and ICP-D, capacitively coupled plasma devices are widely used in etching and other processes due to their superior plasma uniformity.
[0003] Currently, most capacitively coupled plasma devices used for material modification and industrial manufacturing generate plasma by applying radio frequency power to the upper and lower electrodes. The electrode structure of this type of capacitively coupled plasma source device is generally a parallel electrode. The radio frequency power source is applied to the upper electrode, and the bias power source is applied to the lower electrode. The two side walls of the cavity are a certain distance from the electrodes. Therefore, in the initial design, the plasma discharge state is mainly determined by the distance between the upper and lower electrodes and cannot be adjusted later.
[0004] Once the electrode spacing is determined, the plasma distribution within the cavity of the developed plasma generator can only be controlled by adjusting the discharge parameters, resulting in poor controllability and insufficient uniformity. Furthermore, this type of capacitively coupled plasma generator has a limited range of discharge states and modes, typically controlled by a single power supply. Therefore, most current capacitively coupled plasma source processing devices suffer from insufficient plasma distribution uniformity and poor controllability of the discharge state, which significantly hinders material etching and coating processes.
[0005] To achieve better uniformity and stability in crystal processing and semiconductor manufacturing applications, it is necessary to obtain a more uniform plasma distribution within the vacuum cavity and to provide capacitively coupled plasma devices with more controllable states. Therefore, it is essential to invent a multi-directional source capacitively coupled plasma device with multiple controllable modes in each direction, in order to achieve better processing results and controllability in material etching, coating, and other manufacturing processes. Summary of the Invention
[0006] The purpose of this invention is to propose a multi-directional source capacitively coupled plasma source device, which has better plasma uniformity, controllable plasma distribution, and multi-mode states, and solves some of the problems and limitations of current capacitively coupled plasma.
[0007] To achieve the above objectives, the present invention adopts the following technical solution:
[0008] A multi-directional capacitively coupled plasma source device, comprising:
[0009] A vacuum chamber, wherein the vacuum chamber has an insulating outer shell made of quartz glass material covering the vacuum chamber, and the insulating outer shell is hollow and has capacitor electrodes inside;
[0010] The capacitor electrode is made of electrode material in a circular structure. The capacitor electrode in each direction is arranged in multiple parallel and equidistant positions. The capacitor electrode is connected to the outside of the insulating shell through a first connection point formed by conductive metal.
[0011] A control switch, which is connected to the first connection point via a wire, controls the opening and closing of the switch to control the final discharge of the capacitor electrode;
[0012] A vacuum pump is used to evacuate the vacuum chamber to achieve a high vacuum.
[0013] Two air guide tubes, which are hollow pipe structures, are connected at one end to the vacuum chamber and at the other end to the vacuum pump and the gas cylinder, respectively.
[0014] A vacuum gauge that measures the vacuum level of the vacuum chamber by connecting to one side of the corresponding gas guide tube;
[0015] A gas cylinder, which is connected to one side of the corresponding gas guide tube, fills the vacuum chamber with gas to serve as the working gas for the discharge of the capacitively coupled plasma device.
[0016] The radio frequency power supply is connected to multiple capacitor electrodes through the control switch and the first connection point, and the ground terminal is connected to the second connection point of the vacuum cavity, thereby ionizing the working gas filled in the vacuum cavity to generate plasma.
[0017] Preferably, both the first connection point and the second connection point are made of conductive metal and have a circular structure, wherein the first connection point is connected to the control switch through a connecting component.
[0018] Preferably, the connecting component includes an external thread formed on the first connection point and a tightening ring detachably connected to the first connection point. The inner ring of the tightening ring has an internal thread, which, when engaged with the external thread, allows the tightening ring to be threadedly connected to the first connection point. A groove is formed at one end of the first connection point, and two symmetrical clamping plates are slidably connected within the groove. The clamping plates are made of conductive metal. A rectangular block is fixedly connected within the groove, penetrating both clamping plates. A compression spring is fitted onto the rectangular block, with its two ends connected to the two clamping plates respectively, thus moving the clamping plates away from the center. Two edges of the clamping plates away from the center are provided with… The clamping plate has a rounded corner structure. Arc-shaped blocks are fixed on the two sides of the clamping plate away from the center, and multiple semi-cylindrical rubber strips are fixed on the two sides of the clamping plate near the center. The rubber strips are staggered at both locations. A fastening arc plate is fixed to the inner wall of the tightening ring. As the tightening ring rotates, the fastening arc plate rotates synchronously and abuts against the arc-shaped blocks, causing the two clamping plates to move closer to each other. Two grooves are formed on the outer wall of the tightening ring. A fixing rod and a sliding block are fixedly connected in the grooves. The fixing rod passes through the corresponding slider. An insulating protective ring is fixedly connected to one side of the slider. A spring is sleeved on the outer wall of the fixing rod. The two ends of the spring are connected to the groove and the slider, respectively.
[0019] Preferably, all capacitors inside the vacuum cavity are completely identical and are arranged side by side at equal distances in four directions: up, down, left, and right, with a distance of approximately 0.2m between two capacitors on the same side.
[0020] Preferably, the control switch is manually controlled and is connected to the capacitor electrodes in a one-to-one correspondence, arranged side by side at equal distances in the four directions of up, down, left, and right.
[0021] Preferably, the gas guide tube is connected to the gas cylinder and the vacuum pump on the upper and lower sides of the vacuum chamber, respectively. The gas guide tube connected to the gas cylinder is controlled by a needle valve, and the gas guide tube connected to the vacuum pump is controlled by a manual baffle valve.
[0022] Preferably, the vacuum gauge, the vacuum pump, and the gas guide tube are combined to control the vacuum level of the vacuum cavity before the capacitively coupled plasma source device discharges.
[0023] Preferably, the second connection point is connected to the ground line via a bias voltage source.
[0024] Preferably, the radio frequency power supply is present around the vacuum cavity, and each radio frequency power supply independently controls the discharge of the capacitor electrode on one side.
[0025] A plasma processing method includes the following steps:
[0026] A. Evacuate the vacuum chamber using a vacuum pump, and determine the required vacuum level by measuring the results with a vacuum gauge.
[0027] B. A specific working gas is introduced into the vacuum chamber through a gas inlet tube, and the working gas pressure is controlled by a flow meter connected to the gas cylinder.
[0028] C. Connect the capacitor electrode on one side to the radio frequency power supply by controlling the switch, and observe whether a bright and stable plasma is generated in the plasma cavity. If so, turn off the power supply, indicating that the capacitor-coupled plasma device has been debugged. If not, continue to debug the device connection, power parameters, etc., until a stable plasma discharge phenomenon is observed.
[0029] D. Repeat steps A and B, place the material to be processed on the insulated stage inside the vacuum chamber, and select the appropriate working mode by controlling the switch according to the requirements of the material for processing position, uniformity, and plasma density.
[0030] E. Turn on the radio frequency power switch and generate plasma by adjusting the power parameters to modify the placed material.
[0031] Compared with the prior art, the beneficial effects of the present invention are as follows:
[0032] 1. This invention achieves omnidirectional plasma distribution control within the cavity through the design of multi-directional built-in capacitors. Furthermore, each side of the capacitor electrode is excited by a separate radio frequency power supply, enabling independent control of the plasma distribution on each side.
[0033] 2. This invention uses an external switch to control the connection of each capacitor electrode. The opening and closing of the external switch can adjust the spacing and number of capacitor electrodes to achieve multiple modes of plasma discharge. Attached Figure Description
[0034] Figure 1 This is a schematic diagram of the structure of a multi-directional source capacitively coupled plasma source device proposed in this invention;
[0035] Figure 2 This is a schematic diagram of the structure of each first connection point and the insulating shell in a multi-directional source capacitively coupled plasma source device proposed in this invention.
[0036] Figure 3 This is a schematic diagram of the structure of the first connection point and the tightening ring in a multi-directional source capacitively coupled plasma source device proposed in this invention;
[0037] Figure 4 for Figure 3 Schematic diagram of the structure of the central spiral tight ring section;
[0038] Figure 5 for Figure 4 A schematic diagram of the structure cut at the first connection point;
[0039] Figure 6 This is a schematic diagram illustrating the state changes of the tightening ring during rotation in a multi-directional source capacitively coupled plasma source device proposed in this invention.
[0040] Figure 7 This is a schematic diagram of the structure of two clamping plates approaching each other in a multi-directional source capacitively coupled plasma source device proposed in this invention;
[0041] Figure 8 This is a schematic diagram of the connection structure between the tightening ring and the insulating protection ring in a multi-directional source capacitively coupled plasma source device proposed in this invention.
[0042] In the diagram: 1. Vacuum chamber; 2. Capacitor electrode; 3. Control switch; 4. Vacuum pump; 5. Gas delivery tube; 6. Vacuum gauge; 7. Gas cylinder; 8. Radio frequency power supply; 9. External thread; 10. Tightening ring; 11. Internal thread; 12. Slide groove; 13. Clamping plate; 14. Compression spring; 15. Arc block; 16. Rubber strip; 17. Insulating sleeve; 18. Fastening arc plate; 19. Rectangular block; 20. Groove; 21. Fixing rod; 22. Slider; 23. Insulating protective ring; 24. Spring. Detailed Implementation
[0043] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.
[0044] Reference Appendix Figure 1 -Appendix Figure 8 A multi-directional source capacitively coupled plasma source device, comprising:
[0045] Vacuum chamber 1 has an insulating shell made of quartz glass material covering it to reduce the risk of improper experimental operation. The insulating shell is hollow and has capacitor electrodes inside, and its shape meets the requirements of the process environment.
[0046] Capacitor electrode 2 is made of electrode material in a circular structure, such as... Figure 1 As shown in the diagram, the capacitor electrodes in each direction are arranged in multiple parallel, equidistant configurations. These electrodes are connected to the outside of the insulating shell via a first connection point formed of conductive metal. The first connection point is an attachment... Figure 1 1'-4', 7'-10', 13'-16', 19'-22';
[0047] Control switch 3, which is connected to the first connection point via a wire, controls the capacitor electrode for final discharge by controlling its opening and closing;
[0048] Vacuum pump 4 is used to evacuate the vacuum chamber 1 to achieve a high vacuum. The specific vacuum level can be selected by choosing a molecular pump or an ion pump according to actual requirements.
[0049] The two gas guide tubes 5 are hollow pipe structures. One end of each gas guide tube 5 is connected to the vacuum chamber 1, and the other end is connected to the vacuum pump 4 and the gas cylinder 7 respectively.
[0050] Vacuum gauge 6, which is connected to one side of the gas guide tube 5 to measure the vacuum level of vacuum chamber 1, and serves as a criterion for judging whether the requirements are met;
[0051] Gas cylinder 7, which is connected to one side of gas pipe 5 to fill the vacuum chamber with gas as the working gas for discharge of the capacitively coupled plasma device;
[0052] The radio frequency power supply 8 is connected to multiple capacitor electrodes 2 via control switch 3 and first connection points 1'-4', 7'-10', 13'-16', 19'-22', and ground terminal is connected to the second connection points 5'-6', 11'-12', 17'-18', 23'-24' of vacuum chamber 1, thereby ionizing the working gas filled in the vacuum chamber to generate plasma.
[0053] According to the plasma density requirements of the processed material, the vacuum pump 4 is used to adjust the vacuum pressure. The lower the pumping pressure, the higher the plasma density generated by the discharge of the capacitive coupling device under the same conditions. The gas supply device, specifically the gas cylinder 7, adjusts the gas type and inflow discharge gas pressure parameters according to the different requirements of the material processing, and delivers the gas to the vacuum chamber 1 through the gas guide pipe 5. The discharge gas is broken down and ionized to generate plasma by applying the radio frequency power supply 8 to the first connection points 1'-4', 7'-10', 13'-16', and 19'-22' of the capacitor electrode 2. According to the material's requirements for processing position, uniformity, etc., the discharge on each side can be controlled by the radio frequency power supply 8, and the plasma discharge state on each side can be changed by the control switch 3 connected to the capacitor electrode 2 to change the number and distance of the capacitor electrodes.
[0054] Furthermore, there is a connection port between the vacuum pump 4 and the air guide pipe 5 of the vacuum chamber 1. The connection port is connected to the vacuum gauge 6 to detect whether the vacuum level of the chamber after evacuation meets the requirements.
[0055] Furthermore, the capacitor electrodes 2 are arranged side by side at equal distances on each side of the cavity, and each capacitor electrode 2 forms a first connection point with the outside of the vacuum cavity 1 through a conductive metal. The radio frequency power supply 8 and the control switch 3 are connected to the first connection point to realize the discharge of the capacitively coupled plasma device.
[0056] Furthermore, the diameter of capacitor electrode 2 is 0.04m, the spacing between adjacent capacitors is 0.2m, and the distance between the capacitor and the cavity wall is 0.08m.
[0057] Furthermore, control switches 3 are present around the plasma device, each corresponding to a capacitor electrode. The switch on each side of the control circuit controls the opening and closing of capacitor electrodes 3.
[0058] Furthermore, a plasma probe diagnostic position is reserved on the rear side of the vacuum chamber 1, which allows the plasma state to be diagnosed and the mode selection and radio frequency power supply parameters to be adjusted before material processing.
[0059] This invention discloses a multi-directional capacitively coupled plasma source device. The working gas is provided by a gas cylinder and introduced into the cavity through an inlet pipe. The type and input pressure of the working gas are adjusted according to different processing requirements. The device employs multi-directional capacitive electrodes. A high-voltage power supply is applied to the capacitive electrodes to ionize the working gas and form plasma. The multi-directional capacitive electrode arrangement of this device enables omnidirectional processing of materials. Furthermore, the capacitive electrodes in each direction are controlled to close and connect via a control switch, allowing for multi-mode adjustment on each side. This results in an omnidirectional, highly controllable, highly uniform, and multi-mode plasma processing device.
[0060] The first connection points 1'-4', 7'-10', 13'-16', 19'-22' and the second connection points 5'-6', 11'-12', 17'-18', 23'-24' are all made of conductive metal and have a circular structure. The first connection points 1'-4', 7'-10', 13'-16', 19'-22' are connected to the control switch 3 through connecting components.
[0061] The connecting components include an external thread 9 on the first connection point and a tightening ring 10 detachably connected to the first connection point. An internal thread 11 is formed on the inner ring of the rotating ring. The internal thread 11 and the external thread 9 cooperate to allow the tightening ring 10 to be threadedly connected to the first connection point. A groove 12 is formed at one end of the first connection point, and two symmetrical clamping plates 13 are slidably connected within the groove 12. The clamping plates 13 are made of conductive metal. A rectangular block 19 is fixedly connected within the groove 12, passing through the two clamping plates 13. A compression spring 14 is fitted onto the rectangular block 19, with both ends of the spring 14 connected to the two clamping plates 13 respectively, causing the clamping plates 13 to be away from the center. The two edges of the clamping plates 13 away from the center are rounded. Arc-shaped blocks 15 are fixed on the two sides of the clamping plates 13 away from the center. Multiple semi-cylindrical rubber strips 1 are fixed on the two sides of the clamping plates 13 near the center. 6. Two rubber strips 16 are staggered and fixed to the inner wall of the tightening ring 10. As the tightening ring 10 rotates, the fixing arc plate 18 rotates synchronously and abuts against the arc block 15, so that the two clamping plates 13 come closer to each other. This allows the 50 0.25mm conductive wires inside the conductor to be clamped between the two clamping plates 13 by the multiple rubber strips 16 on both sides, realizing the electrical connection between the conductor and the first connection points 1'-4', 7'-10', 13'-16', and 19'-22'. This facilitates the installation and removal of the conductor from the first connection points 1'-4', 7'-10', 13'-16', and 19'-22'. At the same time, an insulating sleeve 17 that is compatible with it can be fitted to the front end of the clamping plate 13 to avoid the safety hazard caused by personnel accidentally touching the clamping plate 13 during plasma treatment, thus eliminating the risk of electric shock due to accidental contact.
[0062] Furthermore, an insulating protective ring 23 can be elastically fitted onto the outer wall of the tightening ring 10. One end of the insulating protective ring 23 is always in contact with the insulating shell, thereby ensuring that personnel's hands will not touch the first connection points 1'-4', 7'-10', 13'-16', and 19'-22'. Specifically, two grooves 20 are opened on the outer wall of the tightening ring 10. A fixing rod 21 and a sliding block 22 are fixedly connected inside the grooves 20. The fixing rod 21 passes through the corresponding slider 22. One side of the slider 22 is fixedly connected to the inner wall of the insulating protective ring 23. A spring 24 is fitted onto the outer wall of the fixing rod 21. The two ends of the spring 24 are connected to the groove 20 and the slider 22, respectively. The elastic force of the spring 24 causes one end of the insulating protective ring 23 to always be in contact with the insulating shell.
[0063] The method of using the multi-directional source capacitively coupled plasma source device of the present invention may include the following steps:
[0064] A. Vacuum chamber 1 is evacuated by vacuum pump 4, and the vacuum level is measured by vacuum gauge 6 to confirm that the required vacuum level has been achieved.
[0065] B. A specific working gas is introduced into the vacuum chamber 1 through the gas inlet pipe 5, and the working gas pressure is controlled by a flow meter connected to the gas cylinder 7.
[0066] C. Control the capacitor electrode 2 on one side to connect to the radio frequency power supply 8 by controlling switch 3, and observe whether there is bright and stable plasma generated in the plasma cavity. If there is, turn off the power supply, indicating that the capacitor-coupled plasma device has been debugged. If not, continue to debug the device connection, power parameters, etc., until a stable plasma discharge phenomenon is observed.
[0067] D. Repeat steps A and B, place the material to be processed on the insulating stage inside vacuum chamber 1, and select the appropriate working mode by controlling the switch according to the requirements of the material for processing position, uniformity, and plasma density (the working mode is determined by the capacitor electrodes 2 and their number).
[0068] E. Turn on the RF power supply 8 switch and generate plasma by adjusting the power parameters to modify the placed material.
[0069] The advantages of this invention compared to the prior art are:
[0070] (1) By designing multi-directional built-in capacitors in the cavity, the plasma distribution control in all directions in the cavity can be realized, and the capacitor electrodes on each side are excited by a separate radio frequency power supply to realize independent control of the plasma distribution on each side.
[0071] (2) The connection control of each side capacitor electrode is realized by an external switch. The opening and closing of the external switch can adjust the spacing and number of capacitor electrodes to realize multiple modes of plasma discharge. There are 15 discharge modes for each side capacitor electrode.
[0072] It should be noted that, referring to the attached figures, (1)-(24) all represent specific structures, and the first connection points 1'-4', 7'-10', 13'-16', 19'-22' are the numbers represented by the corresponding pins, and the second connection points 5'-6', 11'-12', 17'-18', 23'-24' are the numbers represented by the corresponding pins.
[0073] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.
Claims
1. A multi-directional source capacitively coupled plasma source device, characterized in that, include: Vacuum cavity (1), the vacuum cavity (1) has an insulating shell made of quartz glass material covering the vacuum cavity (1), the insulating shell is hollow and has capacitor electrodes inside; The capacitor electrode (2) is made of electrode material in a circular structure. The capacitor electrode (2) in each direction is arranged in multiple parallel and equidistant positions. The capacitor electrode (2) is connected to the outside of the insulating shell through a first connection point (1'-4', 7'-10', 13'-16', 19'-22') formed by conductive metal. The control switch (3) is connected to the first connection point (1'-4', 7'-10', 13'-16', 19'-22') via a wire, and the control of the capacitor electrode (2) for final discharge is achieved by controlling its opening and closing; A vacuum pump (4) is used to evacuate the vacuum chamber (1) to achieve a high vacuum. Two air guide tubes (5) are hollow pipe structures. One end of each of the two air guide tubes (5) is connected to the vacuum chamber (1), and the other end of one of the air guide tubes (5) is connected to the vacuum pump (4). Vacuum gauge (6), which measures the vacuum level of the vacuum chamber (1) by connecting to one side of the corresponding gas guide tube (5); Gas cylinder (7), which is connected to one side of the corresponding gas pipe (5) to fill the vacuum chamber (1) with gas as the working gas for the discharge of the capacitively coupled plasma device; The radio frequency power supply (8) is connected to multiple capacitor electrodes (2) via the control switch (3) and the first connection point (1'-4', 7'-10', 13'-16', 19'-22'), and the ground terminal is connected to the second connection point (5'-6', 11'-12', 17'-18', 23'-24') of the vacuum cavity (1), thereby ionizing the working gas filled in the vacuum cavity to generate plasma; The first connection point (1'-4', 7'-10', 13'-16', 19'-22') and the second connection point (5'-6', 11'-12', 17'-18', 23'-24') are both made of conductive metal and have a circular structure. The first connection point (1'-4', 7'-10', 13'-16', 19'-22') is connected to the control switch (3) through a connecting component. The connecting component includes an external thread (9) on the first connection point and a tightening ring (10) detachably connected to the first connection point. The inner ring of the tightening ring (10) has an internal thread (11). The internal thread (11) and the external thread (9) cooperate to make the tightening ring (10) threadedly connected to the first connection point. A groove (12) is opened at one end of the first connection point. Two symmetrical clamping plates (13) are slidably connected in the groove (12). The clamping plates (13) are made of conductive metal. A rectangular block (19) is fixedly connected in the groove (12). The rectangular block (19) passes through the two clamping plates (13). A compression spring (14) is sleeved on the rectangular block (19). The two ends of the compression spring (14) are respectively connected to the two clamping plates (13), so that the clamping plates (13) are away from the center. The two edges of the clamping plates (13) away from the center are set with rounded corners. (13) Fix arc blocks (15) on two sides away from the center. Fix multiple semi-cylindrical rubber strips (16) on two sides of the clamping plate (13) near the center. The rubber strips (16) at the two locations are staggered. Fix a fastening arc plate (18) on the inner wall of the tightening ring (10). As the tightening ring (10) rotates, the fastening arc plate (18) rotates synchronously and abuts against the arc blocks (15), so that the two clamping plates (13) move closer to each other. Two grooves (20) are opened on the outer wall of the tightening ring (10). Fixing rods (21) and sliding blocks (22) are fixedly connected in the grooves (20). The fixing rods (21) pass through the corresponding blocks (22). An insulating protective ring (23) is fixedly connected to one side of the blocks (22). A spring (24) is sleeved on the outer wall of the fixing rods (21). The two ends of the springs (24) are connected to the grooves (20) and the blocks (22) respectively.
2. The multi-directional source capacitively coupled plasma source device according to claim 1, characterized in that, All capacitors in the vacuum cavity (1) of the capacitor electrode (2) are completely identical and are arranged side by side at equal distances in the four directions of up, down, left and right. The distance between two capacitors on the same side is about 0.2 m.
3. The multi-directional source capacitively coupled plasma source device according to claim 2, characterized in that, The control switch (3) is manually controlled and is connected to the capacitor electrode (2) in a one-to-one correspondence, and is arranged side by side at equal distances in the four directions of up, down, left and right.
4. The multi-directional source capacitively coupled plasma source device according to claim 3, characterized in that, The gas guide tube (5) is connected to the gas cylinder (7) and the vacuum pump (4) on the upper and lower sides of the vacuum chamber (1) respectively. The gas guide tube (5) connected to the gas cylinder (7) is controlled by a needle valve, and the gas guide tube (5) connected to the vacuum pump (4) is controlled by a manual baffle valve.
5. A multi-directional source capacitively coupled plasma source device according to claim 4, characterized in that, The vacuum gauge (6), the vacuum pump (4), and the gas guide tube (5) are combined to regulate the vacuum level of the vacuum chamber (1) before the capacitively coupled plasma source device discharges.
6. A multi-directional source capacitively coupled plasma source device according to claim 5, characterized in that, The second connection point (5'-6', 11'-12', 17'-18', 23'-24') is connected to the ground line via a bias voltage source.
7. A multi-directional source capacitively coupled plasma source device according to claim 6, characterized in that, The radio frequency power supply (8) is present around the vacuum cavity (1), and each radio frequency power supply (8) independently controls the discharge of the capacitor electrode (2) on one side.
Citation Information
Patent Citations
Vacuum plasma processor and method of operating same
CN1608317A