Substrate processing apparatus

Abstract

A substrate processing apparatus includes a process chamber, a substrate tray, a megasonic wave emitting device and a cleaning device. The substrate tray is disposed in the process chamber and is used to carry a substrate. The megasonic wave emitting device is used to transmit megasonic wave energy to a chemical liquid between the megasonic wave emitting device and the substrate. The cleaning device is used to clean the megasonic wave emitting device. The cleaning device includes an electrostatic conduction assembly. The electrostatic conduction assembly is disposed in the cleaning device and is electrically connected to the megasonic wave emitting device to conduct away the electric charge accumulated on the megasonic wave emitting device. The present application has the advantage of avoiding damage defects on the surface of the substrate caused by the discharge of the electric charge accumulated on the megasonic wave emitting device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a substrate processing equipment. Background Art

[0002] SAPS Megasonic (Spatial Alternating Phase Shift Megasonic) technology uses high-frequency (0.8-1.0MHz) AC current to excite a piezoelectric resonator crystal to generate megasonic waves, creating a thin acoustic boundary layer near the substrate surface, forming pressure vibrations and ultra-high-frequency high energy in the solution, thereby effectively removing particles.

[0003] The core component of SAPS Megasonic technology is the megasonic wave transmitter, which includes a piezoelectric sensor and an acoustic resonator. During the substrate cleaning process, chemical liquid is sprayed onto the substrate surface. The megasonic wave transmitter is located above the substrate surface and will descend and immerse into the chemical liquid. The piezoelectric sensor vibrates after being energized, and the acoustic resonator transmits high-frequency sound energy to the chemical liquid. The high-frequency sound energy causes cavitation oscillation, which loosens impurity particles on the substrate surface, thereby removing contaminants on the substrate surface. At this time, Figure 35 As shown, the megasonic wave transmitter forms a parallel capacitor with the chemical liquid 50' and the substrate 40'. The Al2O3 sapphire 302' in the megasonic wave transmitter is an insulator. The piezoelectric sensor can be considered as the upper electrode 301', which is connected to the RF power supply 303'. A resistor exists between the upper electrode 301' and the RF power supply 303'. The chemical liquid 50' and the substrate 40' can be considered as the lower electrode. After the substrate cleaning process is completed, the megasonic wave transmitter is powered off, and the capacitor begins to discharge. The charge on the upper electrode 301' moves toward the resistor (not shown), while the charge on the lower electrode flows toward the substrate tray (not shown) holding the substrate 40'. However, at this point, the RF power supply 303' is disconnected, and the charge on the upper electrode 301' cannot be completely discharged. Therefore, it accumulates on the upper electrode 301', causing residual charge to gradually accumulate on the megasonic wave transmitter.

[0004] When the residual charges on the megasonic wave emitting device accumulate to a certain amount, these residual charges will discharge on the surface of the substrate 40' (eg Figure 36 As shown), damage defects are generated on the surface of the substrate 40'. Summary of the Invention

[0005] The present invention aims to address the prior art issue of residual charge accumulated in megasonic wave emitters causing damage to substrate surfaces. Therefore, the present invention provides a substrate processing apparatus capable of eliminating the charge accumulated in megasonic wave emitters, thereby preventing damage to the substrate surface caused by the discharge of residual charge from the megasonic wave emitters.

[0006] To solve the above problems, embodiments of the present application provide a substrate processing apparatus, comprising:

[0007] a process chamber;

[0008] a substrate tray disposed in the process chamber, the substrate tray configured to hold a substrate;

[0009] a megasonic wave emitting device configured to transmit megasonic wave energy to a chemical liquid between the megasonic wave emitting device and the substrate;

[0010] a cleaning device configured to clean the megasonic wave emitting device, the cleaning device comprising an electrostatic conduction assembly disposed in the cleaning device, the electrostatic conduction assembly configured to electrically connect with the megasonic wave emitting device to conduct away electric charges on the megasonic wave emitting device.

[0011] Another embodiment of the present application provides a substrate processing apparatus, comprising:

[0012] a process chamber;

[0013] a substrate tray configured to hold a substrate;

[0014] a megasonic wave emitting device disposed in the process chamber with the substrate tray, the megasonic wave emitting device configured to transmit megasonic wave energy to a chemical liquid between the megasonic wave emitting device and the substrate;

[0015] a grounded conductive member configured to conduct away electric charges on the megasonic wave emitting device through the chemical liquid on an upper surface of the substrate when the megasonic wave emitting device is located above the substrate.

[0016] Another embodiment of the present application provides a substrate processing apparatus, comprising:

[0017] a process chamber;

[0018] a substrate tray configured to hold a substrate;

[0019] a megasonic wave emitting device disposed in the process chamber with the substrate tray, the megasonic wave emitting device configured to transmit megasonic wave energy to a chemical liquid between the megasonic wave emitting device and the substrate;

[0020] a grounded conductive nozzle configured to conduct away electric charges on the megasonic wave emitting device through the chemical liquid when the megasonic wave emitting device is lowered above the substrate, the conductive nozzle being configured to first spray the chemical liquid on an upper surface of the substrate, and the megasonic wave emitting device being configured to be immersed in a liquid film of the chemical liquid on the upper surface of the substrate.

[0021] Another embodiment of the present application provides a substrate processing apparatus, comprising:

[0022] a process chamber;

[0023] A substrate tray for carrying a substrate;

[0024] A megasonic wave emitting device disposed in the process chamber with the substrate tray, for transmitting megasonic wave energy to a chemical liquid between the megasonic wave emitting device and the substrate;

[0025] A cleaning device for cleaning the megasonic wave emitting device;

[0026] A first ion bar disposed in the process chamber and located between the substrate tray and the cleaning device, an air outlet of the first ion bar faces upward, so that when the megasonic wave emitting device passes through the first ion bar during movement between the substrate tray and the cleaning device, the first ion bar blows ion wind to the megasonic wave emitting device above through the air outlet to neutralize the charge on the megasonic wave emitting device.

[0027] Another embodiment of the present application provides a substrate processing apparatus, comprising:

[0028] A process chamber;

[0029] A substrate tray for carrying a substrate;

[0030] A megasonic wave emitting device disposed in the process chamber with the substrate tray, for transmitting megasonic wave energy to a chemical liquid between the megasonic wave emitting device and the substrate;

[0031] A second ion bar disposed on the inner side wall of the process chamber;

[0032] A driving device for driving the megasonic wave emitting device to rotate, so that the megasonic wave emitting device rotates in the ion wind coverable area of the second ion bar.

[0033] As described above, the substrate processing apparatus of the present application has the following advantages:

[0034] The present application can eliminate the static charge on the megasonic wave emitting device by setting the static elimination assembly, such as the static conduction assembly, the conductive piece, and the ion bar, prevent the accumulation of too much residual charge on the megasonic wave emitting device, and further avoid the discharge phenomenon of these residual charges on the substrate surface during substrate processing, thereby causing damage to the substrate surface.

[0035] Other features and corresponding advantages of the present application are described in the later part of the specification, and it should be understood that at least part of the advantages become apparent from the description of the present application in the specification. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 A perspective structural schematic view of the cleaning device and the megasonic wave emitting device provided in embodiment 1 of the present application;

[0037] Figure 2A perspective view of the cleaning device provided in Embodiment 1 of the present application;

[0038] Figure 3 A perspective view of the electrostatic conduction assembly in the cleaning device provided in Embodiment 1 of the present application;

[0039] Figure 4 A perspective view of the electrostatic conduction assembly in the cleaning device provided in Embodiment 1 of the present application, wherein the protective member is not shown;

[0040] Figure 5 A top view of the substrate processing apparatus provided in Embodiment 2 of the present application;

[0041] Figure 6 A perspective view of the substrate processing apparatus provided in Embodiment 2 of the present application;

[0042] Figure 7 A perspective view of the megasonic wave emitting device, the first cantilever, the first housing, the second cantilever, the second housing and the lead screw provided in Embodiment 2 of the present application;

[0043] Figure 8 A bottom view of the conductive member in contact with the first side wall of the megasonic wave emitting device provided in Embodiment 2 of the present application;

[0044] Figure 9 A perspective view of the conductive member in contact with the first side wall of the megasonic wave emitting device provided in Embodiment 2 of the present application;

[0045] Figure 10 Another perspective view of the conductive member in contact with the first side wall of the megasonic wave emitting device provided in Embodiment 2 of the present application;

[0046] Figure 11 A perspective view of the megasonic wave emitting device with the conductive member working above the substrate provided in Embodiment 2 of the present application;

[0047] Figure 12 A bottom view of the conductive member not in contact with the first side wall of the megasonic wave emitting device provided in Embodiment 2 of the present application;

[0048] Figure 13 A perspective view of the conductive member not in contact with the first side wall of the megasonic wave emitting device provided in Embodiment 2 of the present application;

[0049] Figure 14 Another perspective view of the conductive member not in contact with the first side wall of the megasonic wave emitting device provided in Embodiment 2 of the present application;

[0050] Figure 15A perspective view of a conductive member in contact with a second sidewall of a megasonic wave emitting device according to an embodiment of the present invention;

[0051] Figure 16 A bottom view of a conductive member not in contact with a second sidewall of a megasonic wave emitting device according to an embodiment of the present invention;

[0052] Figure 17 A perspective view of a conductive member in contact with an arc-shaped sidewall of a megasonic wave emitting device according to an embodiment of the present invention;

[0053] Figure 18 A bottom view of a conductive member not in contact with an arc-shaped sidewall of a megasonic wave emitting device according to an embodiment of the present invention;

[0054] Figure 19 A perspective view of a conductive member not in contact with an arc-shaped sidewall of a megasonic wave emitting device according to an embodiment of the present invention;

[0055] Figure 20 A bottom view of a conductive member in contact with a first sidewall, a second sidewall and an arc-shaped sidewall of a megasonic wave emitting device according to an embodiment of the present invention;

[0056] Figure 21 A bottom view of a conductive member not in contact with a first sidewall, a second sidewall and an arc-shaped sidewall of a megasonic wave emitting device according to an embodiment of the present invention;

[0057] Figure 22 A perspective view of a conductive nozzle provided on one side of a megasonic wave emitting device according to an embodiment of the present invention;

[0058] Figure 23 Another perspective view of a conductive nozzle provided on one side of a megasonic wave emitting device according to an embodiment of the present invention;

[0059] Figure 24 A bottom view of a conductive nozzle provided on one side of a megasonic wave emitting device according to an embodiment of the present invention;

[0060] Figure 25 A perspective view of a conductive nozzle according to an embodiment of the present invention;

[0061] Figure 26 Another perspective view of a conductive nozzle according to an embodiment of the present invention;

[0062] Figure 27 and Figure 28 A perspective view of a megasonic wave emitting device with a conductive nozzle according to an embodiment of the present invention working above a substrate;

[0063] Figure 29 A top view schematic diagram of a substrate processing apparatus provided in Embodiment 4 of the present application;

[0064] Figure 30 A perspective view schematic diagram of a substrate processing apparatus provided in Embodiment 4 of the present application;

[0065] Figure 31 Figure 32 A perspective view schematic diagram of a substrate processing apparatus provided in Embodiment 5 of the present application;

[0066] Figure 33 Figure 34 A perspective view schematic diagram of a second cantilever, a first cantilever, a megasonic wave emitting device and a lead screw provided with a driving device provided in Embodiment 5 of the present application;

[0067] Figure 35 A schematic diagram of a structure in which a megasonic wave emitting device and a chemical liquid, a substrate form a parallel capacitor in the prior art; and

[0068] Figure 36 A schematic diagram of a structure in which residual charges accumulated on a megasonic wave emitting device cause damage defects on a substrate surface in the prior art. DETAILED DESCRIPTION

[0069] The present application will now be described by way of specific embodiments, which should not be construed as in any way limiting the scope of the application. Those skilled in the art will readily understand other advantages and benefits of the present application upon perusal of the description. To provide for a clear and consistent understanding of the application, reference will be made to particular embodiments of the application and specific language will be used to describe the same. However, no limitation of the scope of the application is intended by the use of such specific language. It should be further understood that, in the description of principles of the application, that relative terms such as left, right, upper, lower, front, back, top, bottom, over, under, uppermost, lowermost, horizontal, vertical, etc. are used merely for convenience and are not intended to limit the scope of the application to only such variations as are described. Rather, these terms, and similar terms, are used only to describe the particular embodiments, and not every possible embodiment, since alternative embodiments could employ different orientations.

[0070] It should be noted that in this description and in the following claims, identical numbers of reference in different figures represent similar elements, and that in the claims, identical numbers of reference to the same elements in different figures represent the same elements. It should also be noted that the figures are not necessarily drawn to scale.

[0071] ​​The technical solutions of the present application will be described clearly and completely below with reference to the drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0072] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0073] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0074] In order to make the purpose, technical solutions and advantages of the present application more clear, the embodiments of the present application will be further described in detail below with reference to the drawings.

[0075] Embodiment 1:

[0076] The megasonic wave emitting device (such as the megasonic wave emitting device 30 in Figure 1 The megasonic wave emitting device can be applied in a substrate cleaning process, or a substrate pre-wetting process, etc., which is not limited here.

[0077] Taking the substrate cleaning process as an example, those skilled in the art can understand that in the substrate cleaning process, the substrate tray (refer to the substrate tray 400 in Figure 5 carries a substrate and drives the substrate (refer to the substrate 500 in Figure 5The substrate 500 is rotated, and the edge of the substrate tray is provided with a plurality of edge clamps for clamping the substrate. The megasonic wave emitting device is moved to a position above the surface of the substrate, and the at least one nozzle sprays the chemical liquid to the surface of the substrate. The megasonic wave emitting device is lowered and immersed in the chemical liquid. The distance between the megasonic wave emitting interface and the surface of the substrate is changed by controlling the up-and-down movement of the megasonic wave emitting device, so that the integral energy of each point on the substrate received in a cycle is consistent, thereby making the energy of each point on the substrate uniform. The method for cleaning the substrate by using the megasonic wave emitting device is described in detail in the Chinese patent with the publication number CN101879511B, which is incorporated into the present embodiment as a reference.

[0078] In the substrate cleaning process, although the megasonic wave emitting device is in direct contact with the chemical liquid, the edge clamps for clamping the edge of the substrate on the substrate tray are generally made of insulating materials, so that the accumulated charges on the megasonic wave emitting device cannot be effectively conducted and eliminated through the chemical liquid. When the residual charges accumulate to a certain amount, the discharge phenomenon occurs on the surface of the substrate, which causes damage to the surface of the substrate.

[0079] Therefore, the present application provides a cleaning device of a substrate processing equipment, which can clean the megasonic wave emitting device and eliminate the residual charges on the megasonic wave emitting device after the substrate cleaning process.

[0080] Referring to Figure 1 After the substrate cleaning process, the megasonic wave emitting device 30 returns to the initial position and is cleaned in the cleaning device 10 for cleaning the megasonic wave emitting device 30. At this time, the megasonic wave emitting device 30 stops emitting the radio frequency energy and does not generate additional surface charges.

[0081] The cleaning device 10 provided by the present application can conduct and eliminate the residual charges accumulated on the megasonic wave emitting device 30.

[0082] Referring to Figure 2 The cleaning device 10 includes a cleaning tank 100 and an electrostatic conduction assembly 200. The cleaning tank 100 is used for containing a cleaning liquid to clean the megasonic wave emitting device 30. The electrostatic conduction assembly 200 is arranged in the cleaning tank 100 of the cleaning device 10, and is used for electrically connecting with the megasonic wave emitting device 30 to conduct and eliminate the charges accumulated on the megasonic wave emitting device 30.

[0083] In this embodiment, the pure water mixed with CO2 with a resistance of 0.1 MΩ is selected as the cleaning liquid. The material of the cleaning tank 100 is an organic material, such as PTFE (Poly Tetra Fluoro Ethylene) or PFA (Poly Fluoro Alkoxy) material, which is considered to be non-conductive. The present application is provided with the static electricity conduction assembly 200 on the cleaning tank 100 of the cleaning device 10 for electrically connecting with the megasonic wave emitting device 30, so that the electric charge accumulated on the megasonic wave emitting device 30 can be conducted away through the static electricity conduction assembly 200, thereby avoiding the damage defects on the surface of the substrate caused by the residual electric charge accumulated on the megasonic wave emitting device 30 in the substrate cleaning process.

[0084] In other alternative embodiments, the static electricity conduction assembly 200 can be directly contacted with the megasonic wave emitting device 30 by being provided on the cleaning tank 100 of the cleaning device 10, and the electric charge accumulated on the megasonic wave emitting device 30 can be directly conducted away through the static electricity conduction assembly 200.

[0085] In combination Figures 1-2 , the static electricity conduction assembly 200 is fixedly arranged on the bottom of the cleaning tank 100 (i.e. the bottom of the cleaning device 10), and the static electricity conduction assembly 200 is grounded.

[0086] When the megasonic wave emitting device 30 is cleaned in the cleaning tank 100 of the cleaning device 10, the static electricity conduction assembly 200 is electrically connected with the megasonic wave emitting device 30 through the cleaning liquid in the cleaning tank 100, so that the electric charge accumulated on the megasonic wave emitting device 30 is sequentially conducted away through the cleaning liquid and the static electricity conduction assembly 200.

[0087] The static electricity conduction assembly 200 includes a connecting terminal 210 and a wire 220, the connecting terminal 210 and the wire 220 are electrically connected, the connecting terminal 210 is fixedly arranged on the bottom of the cleaning tank 100, and the wire 220 is grounded.

[0088] Further, the first end 2101 of the connecting terminal 210 penetrates the bottom of the cleaning tank 100 and is fixedly arranged on the bottom of the cleaning tank 100 in a threaded connection manner, the first end 2101 of the connecting terminal 210 is in contact with the cleaning liquid, and the second end 2102 of the connecting terminal 210 is connected with the wire 220. Specifically, the threaded connection is an NPT (national pipe thread) threaded connection.

[0089] In this embodiment, the connecting terminal 210 is conductive, and the wire 220 is fixed to the second end 2102 of the connecting terminal 210 through a fixing bolt 240.

[0090] The connecting terminal 210 can also be non-conductive, and a cavity can be provided in the connecting terminal 210, so that the wire 220 is electrically connected to the cleaning liquid through the cavity.

[0091] In combination Figure 3 and Figure 4 The electrostatic flow guide assembly 200 further comprises a protective piece 230, which covers the second end 2102 of the connecting terminal 210 that extends to the outside of the cleaning tank 100. Accordingly, the protective piece 230 is also located outside the cleaning tank 100, and the side wall of the protective piece 230 is fixed to the outer periphery of the connecting terminal 210 by a plurality of top wires 250. The protective piece 230 can partially cover the part of the connecting terminal 210 that extends to the outside of the cleaning tank 100, including the second end 2102 of the connecting terminal 210, mainly to cover the position where the connecting terminal 210 exposes the wire 220, so as to prevent the wire 220 from being interfered by external factors and causing poor contact. The protective piece 230 can also completely cover the part of the connecting terminal 210 that extends to the outside of the cleaning tank 100, so as to prevent the part of the connecting terminal 210 from being corroded, leaking electricity, etc.

[0092] The side wall of the protective piece 230 is also provided with a wire passing hole 231, and the wire 220 fixed to the second end 2102 of the connecting terminal 210 passes through the wire passing hole 231 and is grounded.

[0093] Referring to Figure 2 The cleaning device 10 further comprises an overflow tank 300, an inlet 120 and an outlet. The overflow tank 300 surrounds the cleaning tank 100, and a partition wall 110 is provided between the overflow tank 300 and the cleaning tank 100. Excess cleaning liquid in the cleaning tank 100 flows into the overflow tank 300 through the partition wall 110 and is discharged from the outlet.

[0094] The outlet comprises a first outlet 140 and a second outlet 310. The inlet 120 and the first outlet 140 are both in communication with the cleaning tank 100. The inlet 120 is used to pass the cleaning liquid into the cleaning tank 100, and the first outlet 140 is used to discharge the cleaning liquid in the cleaning tank 100. The second outlet 310 is in communication with the overflow tank 300, and the second outlet 310 is used to discharge the cleaning liquid in the overflow tank 300.

[0095] Further, the inlet 120 and the first outlet 140 are provided in the tank bottom of the cleaning tank 100, and the second outlet 310 is provided in the tank bottom of the overflow tank 300.

[0096] Embodiment 2:

[0097] Referring to Figure 5 and Figure 6The substrate processing device includes a process chamber 1000, a substrate tray 400, a cleaning device 10A, and a megasonic wave emitting device 30A. The cleaning device 10A can be an existing cleaning device or the cleaning device 10 in Embodiment 1.

[0098] The substrate tray 400, the cleaning device 10A, and the megasonic wave emitting device 30A are arranged in the process chamber 1000, and the substrate tray 400 is used to carry the substrate 500. The megasonic wave emitting device 30A is used to transmit megasonic wave energy to the chemical liquid between the megasonic wave emitting device 30A and the substrate 500 to process the substrate 500, and then move to the cleaning device 10A for self-cleaning after the process is completed.

[0099] Taking the substrate cleaning process as an example, the method for cleaning the substrate includes the following steps:

[0100] Clamping the substrate 500 by the substrate tray 400;

[0101] Spraying the chemical liquid to the upper surface of the substrate 500;

[0102] Moving the megasonic wave emitting device 30A above the substrate 500, and lowering the megasonic wave emitting device 30A to form a gap between the megasonic wave emitting device 30A and the upper surface of the substrate 500;

[0103] Rotating the substrate tray 400 to ensure that the gap between the megasonic wave emitting device 30A and the upper surface of the substrate 500 is completely and continuously filled with the cleaning liquid, so that the megasonic wave energy is stably transmitted to the entire surface of the substrate 500 through the cleaning liquid.

[0104] The method for cleaning the substrate is described in detail in Chinese Invention Patent No. CN109890520A, which is incorporated herein by reference.

[0105] In combination with Figure 6 and Figure 7 , the substrate processing device includes a first cantilever 360 and a second cantilever 370 connected to each other, the first cantilever 360 is installed on the top of the megasonic wave emitting device 30A, and the first cantilever 360 has a first housing 361. The driver 1002 in the substrate processing device drives the second cantilever 370 to rise or fall through the lead screw 1003, and drives the second cantilever 370 to rotate, so that the megasonic wave emitting device 30A moves above the substrate 500, or changes the gap between the megasonic wave emitting device 30A and the upper surface of the substrate 500, and the second cantilever 370 has a second housing 371.

[0106] In combination with Figures 8-11 , the substrate processing device further includes a conductive part 600, and the grounding wire 630 is electrically connected to the conductive part 600 through the connector 640.

[0107] The conductive member 600 is configured such that the lower surface 611 of the conductive member 600 contacts the chemical liquid on the upper surface of the substrate 500 before the lower surface 305 of the megasonic wave emitting device 30A, and when the megasonic wave emitting device 30A is immersed in the chemical liquid film on the upper surface of the substrate 500, the electric charges on the megasonic wave emitting device 30A are conducted to the conductive member 600 through the chemical liquid. Then, the megasonic wave emitting device 30A is turned on to transmit the megasonic wave energy to the chemical liquid between the megasonic wave emitting device 30A and the substrate 500, so that the megasonic wave energy is stably transmitted to the entire surface of the substrate 500 through the chemical liquid. After the megasonic wave emitting device 30A is turned on, the conductive member 600 can still conduct electricity to eliminate static electricity generated during the processing of the substrate 500. In the embodiment, the central nozzle 362 is used to spray the chemical liquid on the upper surface of the substrate 500, and the central nozzle 362 is arranged on the first cantilever 360 and integrated with the megasonic wave emitting device 30A. In other alternative embodiments, a separately arranged nozzle can also be used to spray the chemical liquid on the upper surface of the substrate 500.

[0108] In addition, during the process of lowering the megasonic wave emitting device 30A, the lower surface 305 of the megasonic wave emitting device 30A is kept parallel to the upper surface of the substrate 500 on the substrate tray 400; or, the lower surface 305 of the megasonic wave emitting device 30A is first inclined relative to the upper surface of the substrate 500, so that the electric charges on the megasonic wave emitting device 30A are conducted to the chemical liquid and the conductive member 600, and then the lower surface 305 of the megasonic wave emitting device 30A is kept parallel to the upper surface of the substrate 500, and then the megasonic wave emitting device 30A is turned on to process the substrate 500.

[0109] The shape of the megasonic wave emitting device 30A can be polygonal, oval, semicircular, quarter circular, or circular, etc. The shape of the conductive member 600 is changed according to the shape of the megasonic wave emitting device 30A.

[0110] Preferably, the shape of the megasonic wave emitting device 30A is triangular or pie-shaped similar to a triangle (i.e., pie-shaped similar to a triangle). The conductive member 600 is located at a position of at least one of the first side wall 301, the second side wall 302, and the third side wall 303 of the megasonic wave emitting device 30A, and the lower surface 611 of the conductive member 600 exceeds the lower surface 305 of the megasonic wave emitting device 30A.

[0111] Referring to Figures 8-10, the conductive member 600 is located at the position of the first sidewall 301 of the megasonic wave emitting device 30A, the conductive member 600 is, for example, a conductive rod or a conductive block, which comprises a conductive part 610 and a fixing part 620, the conductive part 610 is fixed to the first cantilever 360 through the fixing part 620, the conductive part 610 is in contact with the first sidewall 301 of the megasonic wave emitting device 30A, and the lower surface 611 of the conductive part 610 exceeds the lower surface 305 of the megasonic wave emitting device 30A. Since the lower surface 611 of the conductive member 600 contacts the chemical liquid on the upper surface of the substrate 500 first, when the megasonic wave emitting device 30A is immersed in the chemical liquid film on the upper surface of the substrate 500, according to the principle that electrons preferentially conduct along the path with smaller resistance, the electric charge on the megasonic wave emitting device 30A will be conducted to the grounded conductive member 600 through the chemical liquid and then be led away from the side, thereby avoiding the electric charge from reaching the substrate 500.

[0112] Referring to Figures 12-14 , the conductive part 610 of the conductive member 600 can also not be in contact with the first sidewall 301 of the megasonic wave emitting device 30A, that is, there is a gap between the conductive part 610 of the conductive member 600 and the first sidewall 301 of the megasonic wave emitting device 30A, and the conductive member 600 itself can be grounded to lead away the electric charge. Similarly, according to the principle that electrons preferentially conduct along the path with smaller resistance, the electric charge on the megasonic wave emitting device 30A will be conducted to the grounded conductive member 600 through the chemical liquid and then be led away from the side, thereby avoiding the electric charge from reaching the substrate 500. In this embodiment, the fixing part 620 can be fixed to the sidewall of the first cantilever 360 by a screw.

[0113] In other embodiments, whether the conductive part 610 of the conductive member 600 is in contact with the first sidewall 301 of the megasonic wave emitting device 30A or not, the conductive part 610 of the conductive member 600 can be inclined relative to the first sidewall 301 of the megasonic wave emitting device 30A, so that the conductive part 610 contacts the chemical liquid before the megasonic wave emitting device 30A.

[0114] Similarly, referring to Figure 15 , the conductive member 600 can also be arranged on the second sidewall 302 of the megasonic wave emitting device 30A, and the conductive part 610 of the conductive member 600 is in contact with the second sidewall 302 of the megasonic wave emitting device 30A. Referring to Figure 16 , the conductive part 610 of the conductive member 600 can also not be in contact with the second sidewall 302 of the megasonic wave emitting device 30A. In other embodiments, the first sidewall 301 and the second sidewall 302 of the megasonic wave emitting device 30A can both be provided with the conductive member 600, so that the conductive member 600 contacts the chemical liquid before the megasonic wave emitting device 30A.

[0115] The conductive member 600 can also be arranged on the third side wall 303 of the megasonic wave emitting device 30A. The shape of the conductive member 600 is changed according to the shape of the third side wall 303. The conductive part 610 of the conductive member 600 is electrically connected to the fixed part 620. The ground wire 630 is electrically connected to the conductive member 600 through the joint 640 on the fixed part 620. The fixed part 620 is fixed to the first cantilever 360. The conductive part 610 of the conductive member 600 is in contact with (see Figure 17 ) or not in contact with (see Figure 18 , Figure 19 ) the third side wall 303 of the megasonic wave emitting device 30A.

[0116] Furthermore, the conductive member 600 can be arranged on the first side wall 301, the second side wall 302 and the third side wall 303 of the megasonic wave emitting device 30A. The conductive part 610 of the conductive member 600 is in contact with (see Figure 20 ) or not in contact with (see Figure 21 ) the first side wall 301, the second side wall 302 and the third side wall 303 of the megasonic wave emitting device 30A, so that the conductive member 600 is in contact with the chemical liquid before the megasonic wave emitting device 30A.

[0117] In this embodiment, the conductive member 600 can be made of ESD PTFE, ESD PEEK, ESD PCTFE, ESD ETFE or ESD PFA, etc.

[0118] The lower surface 611 of the conductive part 610 of the conductive member 600 can also be flush with the lower surface 305 of the megasonic wave emitting device 30A. The lower surface 611 of the conductive member 600 is in contact with the chemical liquid on the upper surface of the substrate 500 at the same time as the lower surface 305 of the megasonic wave emitting device 30A, so that the electric charge on the megasonic wave emitting device 30A is conducted to the conductive member 600 through the chemical liquid.

[0119] Example 3

[0120] The substrate processing apparatus proposed in this embodiment, with reference to the Figure 5 and Figure 6 of Example 2, includes a process chamber 1000, a substrate tray 400, a cleaning device 10A and a megasonic wave emitting device 30A. The cleaning device 10A can be an existing cleaning device or the cleaning device 10 in Example 1.

[0121] The substrate tray 400, the cleaning device 10A and the megasonic transmitting device 30A are disposed in the process chamber 1000, and the substrate tray 400 is used to carry the substrate 500. The megasonic transmitting device 30A is used to transmit megasonic energy to the chemical liquid between the megasonic transmitting device 30A and the substrate 500 to process the substrate 500, and then move to the cleaning device 10A for self-cleaning after the process is completed.

[0122] Referring to Figures 22-24 , the conductive nozzle 700 is disposed on one side of the megasonic transmitting device 30A. Referring to Figure 25 and Figure 26 , the conductive nozzle 700 has a liquid inlet 710 disposed at the top of the conductive nozzle 700 and a plurality of liquid outlets 720 uniformly distributed at the bottom of the conductive nozzle 700.

[0123] Referring to Figure 27 and Figure 28 , the conductive nozzle 700 is configured such that when the megasonic transmitting device 30A is lowered above the substrate 500, the conductive nozzle 700 first sprays the chemical liquid to the upper surface of the substrate 500 through the plurality of liquid outlets 720, and when the megasonic transmitting device 30A is immersed in the chemical liquid film on the upper surface of the substrate 500, the electric charge on the megasonic transmitting device 30A is conducted to the conductive nozzle 700 through the chemical liquid, thereby eliminating the static electricity on the megasonic transmitting device 30A, wherein the grounding wire 730 is electrically connected to the conductive nozzle 700 through the connector 740.

[0124] In combination with Figure 24 and Figure 28 , the conductive nozzle 700 is in contact with the first side wall 301 of the megasonic transmitting device 30A. In other embodiments, the conductive nozzle 700 can also be spaced apart from the first side wall 301 of the megasonic transmitting device 30A, i.e., not in contact.

[0125] The lower surface 701 of the conductive nozzle 700 is higher than the lower surface 305 of the megasonic transmitting device 30A. In other embodiments, the lower surface 701 of the conductive nozzle 700 can also be lower than or flush with the lower surface 305 of the megasonic transmitting device 30A, which is designed according to actual needs.

[0126] In addition, while the conductive nozzle 700 sprays the chemical liquid, the central nozzle 362 disposed at the end of the first cantilever 360 can also spray the chemical liquid to the upper surface of the substrate 500, and by controlling the rotation speed of the substrate tray 400, the gap between the megasonic transmitting device 30A and the upper surface of the substrate 500 is completely and continuously filled with the chemical liquid, so that the megasonic energy is stably transmitted to the entire surface of the substrate 500 through the chemical liquid. In other embodiments, only the conductive nozzle 700 can be used to spray the chemical liquid to the upper surface of the substrate 500.

[0127] In this embodiment, the material of the conductive nozzle 700 is an anti-static conductive material such as ESD PTFE, ESD PEEK, ESD PCTFE, ESD ETFE or ESD PFA.

[0128] Example 4:

[0129] Example 4 proposes another embodiment to eliminate static electricity on the megasonic wave emitting device 30A. A first ionizer 800 is used to neutralize the charge on the megasonic wave emitting device 30A.

[0130] Referring to Figure 29 and Figure 30 , this embodiment provides a substrate processing apparatus including a process chamber 1000, a substrate tray 400, a cleaning device 10A and a megasonic wave emitting device 30A, the substrate tray 400, the cleaning device 10A and the megasonic wave emitting device 30A are disposed in the process chamber 1000, the substrate tray 400 is used to carry a substrate 500, and the cleaning device 10A is used to clean the megasonic wave emitting device 30A. The cleaning device 10A can be an existing cleaning device, or the cleaning device 10 in Example 1 can be used.

[0131] The substrate processing apparatus further includes a first ionizer 800 and a second ionizer 900, the first ionizer 800 is disposed in the process chamber 1000 and located between the substrate tray 400 and the cleaning device 10A, the air outlet 810 of the first ionizer 800 faces upward, and during the movement of the megasonic wave emitting device 30A from the substrate tray 400 to the cleaning device 10A or from the cleaning device 10A to the substrate tray 400, the bottom of the megasonic wave emitting device 30A passes through the first ionizer 800 downward, and the first ionizer 800 blows ion wind to the megasonic wave emitting device 30A above through the air outlet 810 to neutralize the charge on the megasonic wave emitting device 30A, preventing the charge from being brought to the surface of the substrate 500 to cause discharge phenomenon. In addition, when the megasonic wave emitting device 30A is placed at any position within the ion wind coverable area of the first ionizer 800, the first ionizer 800 can blow ion wind to the megasonic wave emitting device 30A to neutralize the charge on the megasonic wave emitting device 30A, also achieving the purpose of removing static electricity.

[0132] The second ionizer 900 is also disposed in the process chamber 1000, and the second ionizer 900 is located above the window 1001, the substrate 500 is put into or taken out of the process chamber 1000 through the window, and the substrate 500 is placed in the substrate tray 400 and located within the ion wind coverable area of the second ionizer 900, the second ionizer 900 blows ion wind to the substrate 500 from the air outlet 910 to neutralize the residual charge on the surface of the substrate 500.

[0133] Example 5:

[0134] Example 5 provides another embodiment for eliminating static electricity on the megasonic wave emitting device 30A, wherein a second ion rod 900 is used to neutralize the charge on the megasonic wave emitting device 30A.

[0135] See also Figure 31 and Figure 32 The substrate processing equipment provided in this embodiment includes a second ion rod 900 and a megasonic wave emission device 30A.

[0136] In the prior art, the second ion rod 900 is often used to neutralize the residual charge on the surface of the substrate 500. Its working principle is to pressurize the silicon needles inside the ion rod to ionize the air and water vapor in the atmosphere to form positive and negative charges, and then use N2 to blow these positive and negative charges out of the air outlet 910 to neutralize the residual charge on the surface of the substrate 500.

[0137] In this embodiment, the second ion rod 900 is disposed on the inner wall of the process chamber 1000, and a window 1001 for the substrate 500 to enter and exit is opened on the inner wall (refer to the window 1001 of Example 4). Figure 30 The second ion rod 900 is located above the window 1001 .

[0138] See also Figure 33 and Figure 34 The substrate processing equipment also includes a first cantilever 360 and a second cantilever 370. The first cantilever 360 is installed on the top of the megasonic wave emitting device 30A. The second cantilever 370 is provided with a driving device 372. The driving device 372 drives the first cantilever 360 to rotate in conjunction with the megasonic wave emitting device 30A, so that the megasonic wave emitting device 30A rotates within the area covered by the ion wind of the second ion rod 900.

[0139] The driver 1002 in the substrate processing equipment drives the second cantilever 370 to rise or fall, and drives the second cantilever 370 to rotate, through the screw rod 1003. When the process of the megasonic wave emitting device 30A is completed, the second cantilever 370 is driven by the driver 1002 to link the first cantilever 360 to lift the megasonic wave emitting device 30A and move it to the area covered by the ion wind of the second ion rod 900 (such as Figure 32 The megasonic wave emitting device 30A is located in the middle of the megasonic wave emitting device 30A, and then the megasonic wave emitting device 30A is rotated by the driving device 372 on the second cantilever 370. The megasonic wave emitting device 30A can be rotated to any angle, so that the ion wind of the second ion rod 900 is evenly blown to all parts of the megasonic wave emitting device 30A through the air outlet 910, thereby achieving the purpose of removing static electricity.

[0140] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, and are not intended to limit the present application; although the present application has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions recorded in the above embodiments can be modified, or some or all of the technical features can be replaced by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A substrate processing device, characterized in that: include: process chamber; A substrate tray is disposed in the process chamber and is used to carry a substrate; A megasonic wave emitting device, used to transmit megasonic wave energy to the chemical liquid between the megasonic wave emitting device and the substrate; a cleaning device for cleaning the megasonic wave emitting device, the cleaning device comprising an electrostatic diversion component disposed on the cleaning device and electrically connected to the megasonic wave emitting device to conduct away the charge on the megasonic wave emitting device; When the megasonic wave emitting device is cleaned in the cleaning device, the electrostatic deflection component is electrically connected to the megasonic wave emitting device through the cleaning fluid in the cleaning device, so that the charge on the megasonic wave emitting device is sequentially conducted away through the cleaning fluid in the cleaning device and the electrostatic deflection component.

2. The substrate processing apparatus according to claim 1, wherein: The electrostatic diversion component is fixedly arranged at the bottom of the cleaning device, and the electrostatic diversion component is grounded.

3. The substrate processing equipment according to claim 2, wherein: The electrostatic diversion component includes a connecting terminal and a wire, the connecting terminal and the wire are electrically connected, the connecting terminal is fixed at the bottom of the cleaning device, and the wire is grounded.

4. The substrate processing equipment according to claim 3, wherein: The first end of the connecting terminal passes through the bottom of the cleaning device and is electrically connected to the cleaning liquid, and the second end of the connecting terminal is connected to the wire.

5. The substrate processing equipment according to claim 3, wherein: The connecting terminal passes through the bottom of the cleaning device. A cavity is provided in the connecting terminal. The wire passes through the cavity to be electrically connected to the cleaning liquid.

6. The substrate processing apparatus according to claim 4, wherein: The electrostatic diversion assembly further includes a protective member, which covers the second end of the connecting terminal. The protective member is provided with a wire hole, and the wire passes through the wire hole and is grounded.

7. The substrate processing apparatus according to claim 1, wherein: Also includes: A grounded conductive member is configured so that when the megasonic wave emitting device is located above the substrate, the charge on the megasonic wave emitting device is conducted to the conductive member through the chemical liquid on the upper surface of the substrate and then conducted away.

8. The substrate processing apparatus according to claim 7, wherein: When the megasonic wave emitting device descends above the substrate, the lower surface of the conductive member contacts the chemical liquid on the upper surface of the substrate before or simultaneously with the lower surface of the megasonic wave emitting device, so that the charge on the megasonic wave emitting device is conducted to the conductive member through the chemical liquid and is conducted away.

9. The substrate processing apparatus according to claim 8, wherein: The substrate processing equipment further includes a first cantilever mounted on the top of the megasonic wave emitting device; The conductive member includes a conductive portion and a fixed portion connected to each other, the conductive portion being fixed to the first cantilever via the fixed portion, the conductive portion being in contact with or spaced apart from at least one side wall of the megasonic wave emitting device, and the lower surface of the conductive portion exceeding the lower surface of the megasonic wave emitting device.

10. The substrate processing apparatus according to claim 9, wherein: The megasonic wave emitting device is triangular or pie-shaped and has a first side wall, a second side wall, and a third side wall. The conductive portion is in contact with or spaced apart from at least one of the first side wall, the second side wall, and the third side wall of the megasonic wave emitting device.

11. The substrate processing apparatus according to any one of claims 7 to 10, wherein: The conductive element is made of ESD PTFE, ESD PEEK, ESD PCTFE, ESD ETFE or ESD PFA.

12. The substrate processing apparatus according to claim 1, wherein: Also includes: A grounded conductive nozzle is configured so that when the megasonic wave emitting device descends above the substrate, the conductive nozzle first sprays a chemical liquid onto the upper surface of the substrate. When the megasonic wave emitting device is immersed in the chemical liquid film on the upper surface of the substrate, the charge on the megasonic wave emitting device is conducted to the conductive nozzle through the chemical liquid and conducted away.

13. The substrate processing apparatus according to claim 12, wherein: The conductive nozzle is arranged on one side of the megasonic wave transmitting device.

14. The substrate processing equipment according to claim 12 or 13, wherein: The conductive nozzle has a liquid inlet and a plurality of liquid outlets, wherein the liquid inlet is arranged at the top of the conductive nozzle, and the plurality of liquid outlets are evenly distributed at the bottom of the conductive nozzle.

15. The substrate processing equipment according to claim 12 or 13, wherein: The conductive nozzle is made of ESD PTFE, ESD PEEK, ESD PCTFE, ESD ETFE or ESD PFA.

16. The substrate processing apparatus according to claim 1, wherein: Also includes: A first ion rod is disposed in the process chamber and located between the substrate tray and the cleaning device. The air outlet of the first ion rod faces upward, so that when the megasonic wave emitting device passes by the first ion rod during movement between the substrate tray and the cleaning device, the first ion rod blows ion wind toward the megasonic wave emitting device above through the air outlet to neutralize the charge on the megasonic wave emitting device.

17. The substrate processing equipment according to claim 1 or 16, wherein: Also includes: a second ion rod, disposed on the inner wall of the process chamber; The driving device is used to drive the megasonic wave emitting device to rotate, so that the megasonic wave emitting device rotates within the coverage area of ​​the ion wind of the second ion rod.

18. The substrate processing apparatus according to claim 17, wherein: Also includes: A first cantilever and a second cantilever, wherein the first cantilever is mounted on the top of the megasonic wave emitting device, and the second cantilever is provided with the driving device, and the driving device drives the first cantilever to rotate in conjunction with the megasonic wave emitting device, so that the megasonic wave emitting device rotates within the area covered by the ion wind of the second ion rod.

19. A substrate processing device, characterized in that: include: process chamber; A substrate tray, used for carrying a substrate; A megasonic wave emitting device is disposed in the process chamber together with the substrate tray and is used to transmit megasonic wave energy to the chemical liquid between the megasonic wave emitting device and the substrate; A grounded conductive member is configured so that when the megasonic wave emitting device is located above the substrate, the charge on the megasonic wave emitting device is conducted to the conductive member through the chemical liquid on the upper surface of the substrate and then conducted away.

20. The substrate processing apparatus according to claim 19, wherein When the megasonic wave emitting device descends above the substrate, the lower surface of the conductive member contacts the chemical liquid on the upper surface of the substrate before or simultaneously with the lower surface of the megasonic wave emitting device, so that the charge on the megasonic wave emitting device is conducted to the conductive member through the chemical liquid and is conducted away.

21. The substrate processing apparatus according to claim 20, wherein: The substrate processing equipment further includes a first cantilever mounted on the top of the megasonic wave emitting device; The conductive member includes a conductive portion and a fixed portion connected to each other, the conductive portion being fixed to the first cantilever via the fixed portion, the conductive portion being in contact with or spaced apart from at least one side wall of the megasonic wave emitting device, and the lower surface of the conductive portion exceeding the lower surface of the megasonic wave emitting device.

22. The substrate processing apparatus according to claim 21, wherein: The megasonic wave emitting device is triangular or pie-shaped and has a first side wall, a second side wall, and a third side wall. The conductive portion is in contact with or spaced apart from at least one of the first side wall, the second side wall, and the third side wall of the megasonic wave emitting device.

23. A substrate processing device, characterized in that: include: process chamber; A substrate tray, used for carrying a substrate; A megasonic wave emitting device is disposed in the process chamber together with the substrate tray and is used to transmit megasonic wave energy to the chemical liquid between the megasonic wave emitting device and the substrate; A grounded conductive nozzle is configured so that when the megasonic wave emitting device descends above the substrate, the conductive nozzle first sprays a chemical liquid onto the upper surface of the substrate. When the megasonic wave emitting device is immersed in the chemical liquid film on the upper surface of the substrate, the charge on the megasonic wave emitting device is conducted to the conductive nozzle through the chemical liquid and conducted away.

24. The substrate processing apparatus according to claim 23, wherein: The conductive nozzle is arranged on one side of the megasonic wave transmitting device.

25. The substrate processing equipment according to claim 23 or 24, wherein: The conductive nozzle has a liquid inlet and a plurality of liquid outlets, wherein the liquid inlet is arranged at the top of the conductive nozzle, and the plurality of liquid outlets are evenly distributed at the bottom of the conductive nozzle.

26. A substrate processing device, characterized in that: include: process chamber; A substrate tray, used for carrying a substrate; A megasonic wave emitting device is disposed in the process chamber together with the substrate tray and is used to transmit megasonic wave energy to the chemical liquid between the megasonic wave emitting device and the substrate; a cleaning device for cleaning the megasonic wave emitting device; A first ion rod is disposed in the process chamber and located between the substrate tray and the cleaning device. The air outlet of the first ion rod faces upward, so that when the megasonic wave emitting device passes by the first ion rod during movement between the substrate tray and the cleaning device, the first ion rod blows ion wind toward the megasonic wave emitting device above through the air outlet to neutralize the charge on the megasonic wave emitting device.

27. A substrate processing device, characterized in that: include: process chamber; A substrate tray, used for carrying a substrate; A megasonic wave emitting device is disposed in the process chamber together with the substrate tray and is used to transmit megasonic wave energy to the chemical liquid between the megasonic wave emitting device and the substrate; a second ion rod, disposed on the inner wall of the process chamber; The driving device is used to drive the megasonic wave emitting device to rotate, so that the megasonic wave emitting device rotates within the coverage area of ​​the ion wind of the second ion rod.

28. The substrate processing apparatus according to claim 27, wherein: Also includes: A first cantilever and a second cantilever, wherein the first cantilever is mounted on the top of the megasonic wave emitting device, and the second cantilever is provided with the driving device, and the driving device drives the first cantilever to rotate in conjunction with the megasonic wave emitting device, so that the megasonic wave emitting device rotates within the area covered by the ion wind of the second ion rod.

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