Atomic layer deposition equipment

Abstract

The present invention discloses an atomic layer deposition device, comprising: a cover having a reaction chamber; a supporting platform arranged in the reaction chamber, the supporting platform being used to place a substrate and being capable of rotating; the reaction chamber comprising multiple reaction areas, each of which being provided with an air inlet, and a gas isolation portion being provided between two adjacent reaction areas, the air inlet portion comprising a first air inlet, the gas isolation portion comprising a first exhaust port, a second air inlet, a second exhaust port, and a third air inlet, the first exhaust port surrounding the periphery of the first air inlet, the second air inlet surrounding the periphery of the first exhaust port, the second exhaust port surrounding the periphery of the second air inlet, and the third air inlet surrounding the periphery of the second exhaust port, the first exhaust port and the second exhaust port both being used to discharge gas, and the second air inlet and the third air inlet both being used to introduce inert gas. The atomic layer deposition device of the present invention can achieve a good isolation effect and has a high processing efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film deposition, and in particular to an atomic layer deposition device. Background Art

[0002] In the related art, atomic layer deposition (ALD) technology is widely used in the fields of electronic device and optical component manufacturing due to its advantages such as good deposition uniformity, high step coverage, precise and controllable deposition thickness, high film quality and few impurities. Generally, the atomic layer deposition process includes multiple reactants. When one of the reactants enters the reaction chamber and undergoes a surface chemical reaction with the substrate, the excess reactants and by-products are washed away, and then another reactant enters the reaction chamber to undergo further chemical reaction on the substrate surface, completing a reaction cycle. This cycle is repeated to complete the atomic layer deposition of a specified thickness. When traditional time-based ALD technology processes single or batch substrates, it strictly follows the ALD reaction steps, and each step has a time stop. It takes a long time to achieve the required film thickness, consumes high energy, and has a slow production rate, which is not conducive to production needs and cost control. Over time, spatial ALD technology is changing this situation. Higher film formation rates and faster film thickness shaping maximize production costs and benefits.

[0003] When existing atomic layer deposition equipment uses spatial ALD technology to deposit thin films, in order to avoid mutual influence between the first reactant and the second reactant, gas isolation is used. Specifically, an inert gas is set between two adjacent reaction gases to separate the two reaction gases. In this way, in order to achieve a better isolation effect, the rotation speed of the sample stage is usually slowed down. If the rotation speed of the sample stage is fast, the reaction gas will be affected by the rotation of the sample stage and move with the sample stage, which will make the isolation effect poor. However, the slower rotation speed of the sample stage will result in too low processing efficiency and fail to meet production needs. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides an atomic layer deposition device that can achieve good isolation effect and high processing efficiency.

[0005] An atomic layer deposition apparatus according to an embodiment of the present invention includes:

[0006] A cover body having a reaction chamber;

[0007] A carrier platform is provided in the reaction chamber, the carrier platform is used to place the substrate, and the carrier platform is rotatable;

[0008] In which, along the rotation direction of the supporting platform, the reaction chamber includes multiple reaction areas, the reaction areas are provided with air inlets, and a gas isolation part is provided between two adjacent reaction areas, wherein the air inlet part includes a first air inlet, and the first air inlet is used to allow the reaction gas to enter the reaction chamber, and the gas isolation part includes a first exhaust port, a second air inlet, a second exhaust port and a third air inlet, the first exhaust port surrounds the periphery of the first air inlet, the second air inlet surrounds the periphery of the first exhaust port, the second exhaust port surrounds the periphery of the second air inlet, and the third air inlet surrounds the periphery of the second exhaust port, the first exhaust port and the second exhaust port are both used to discharge the gas from the reaction chamber, and the second air inlet and the third air inlet are both used to introduce inert gas into the reaction chamber.

[0009] According to an embodiment of the present invention, the atomic layer deposition apparatus has at least the following beneficial effects: by providing a gas isolation portion between two adjacent reaction areas, the reaction gas can be isolated. Specifically, to improve the isolation effect, the gas isolation portion includes a first exhaust port, a second exhaust port, a third exhaust port, and a third exhaust port, which are sequentially arranged along the direction from the gas inlet portion to the gas isolation portion. In this way, the reaction gas enters the gas inlet portion through the first exhaust port, and then the first exhaust port is arranged around the reaction area. The first exhaust port surrounds the periphery of the first exhaust port and can exhaust the reaction gas, thereby preventing the same reaction gas from entering different reaction areas. Furthermore, after the second inlet is introduced into the inert gas, the reaction gas can be effectively prevented from diffusing. The second exhaust port can further exhaust the gas. After the third inlet is introduced into the inert gas, the gas diffusion is further prevented. In this way, the isolation effect can be effectively improved by repeatedly exhausting and introducing the isolation gas in the gas isolation portion. After the substrate is placed on the carrier, the carrier rotates and drives the substrate to rotate, thereby performing deposition on the substrate. Due to the good isolation effect, the carrier can rotate at a higher speed, thereby improving processing efficiency. Specifically, atomic layer deposition equipment can achieve better isolation effects and faster processing efficiency.

[0010] According to the atomic layer deposition equipment of some embodiments of the present invention, a plurality of the gas isolation parts are provided between two adjacent reaction areas.

[0011] According to some embodiments of the atomic layer deposition equipment of the present invention, the atomic layer deposition equipment further includes a lifting mechanism, which is connected to the carrier platform and can raise or lower the carrier platform to move the carrier platform closer to or away from the first air inlet.

[0012] According to some embodiments of the atomic layer deposition equipment of the present invention, the supporting platform includes a main body and a protruding portion, the protruding portion is connected to the edge of the main body and protrudes downward from the main body, the cover body includes a lower cover, the lower cover is provided with a receiving groove, the protruding portion is slidably arranged in the receiving groove, the protruding portion is used to divide the reaction chamber into a first chamber and a second chamber separated from each other, the air inlet portion and the gas isolation portion are arranged in the first chamber, and the lifting mechanism is arranged in the second chamber.

[0013] According to the atomic layer deposition apparatus of some embodiments of the present invention, the lower cover is further provided with a fourth gas inlet connected to the containing tank, and the fourth gas inlet is used to introduce the inert gas into the containing tank.

[0014] According to the atomic layer deposition apparatus of some embodiments of the present invention, the lower cover is further provided with a fifth gas inlet communicated with the second chamber, and the fifth gas inlet is used to introduce the inert gas into the second chamber.

[0015] According to the atomic layer deposition equipment of some embodiments of the present invention, the cover body is further provided with an isolation groove connected to the reaction chamber, the isolation groove is used to accommodate the inert gas, the isolation groove surrounds the periphery of the supporting platform, and the opening of the isolation groove faces the supporting platform, and along the radial direction of the supporting platform, the projection of the supporting platform partially overlaps with the projection of the isolation groove.

[0016] According to the atomic layer deposition equipment of some embodiments of the present invention, the cover body is also provided with a sixth air inlet connected to the isolation groove, the sixth air inlet is used to introduce the inert gas into the isolation groove, and the sixth air inlet is arranged on the wall surface of the isolation groove at one end away from the supporting platform.

[0017] According to some embodiments of the atomic layer deposition equipment of the present invention, the atomic layer deposition equipment also includes a lining plate, which is arranged between the cover body and the supporting platform, and the lining plate is used to cover at least part of the opening of the isolation groove. The lining plate is also provided with a third exhaust port connected to the isolation groove, and the third exhaust port is used to discharge the gas in the isolation groove.

[0018] According to the atomic layer deposition apparatus of some embodiments of the present invention, the liner is detachably connected to the carrier platform.

[0019] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The present invention will be further described below with reference to the accompanying drawings and embodiments, in which:

[0021] Figure 1 is a schematic diagram of an atomic layer deposition apparatus according to some embodiments of the present invention;

[0022] Figure 2 for Figure 1 A magnified schematic diagram of point A in the middle;

[0023] Figure 3 for Figure 1 A magnified schematic diagram of point B in the middle;

[0024] Figure 4 A schematic diagram of a cover in an atomic layer deposition apparatus according to some embodiments of the present invention;

[0025] Figure 5 A partial schematic diagram of a cover body in an atomic layer deposition apparatus according to some embodiments of the present invention;

[0026] Figure 6 Schematic diagram of a cover and a liner in an atomic layer deposition apparatus according to some embodiments of the present invention.

[0027] Reference numerals:

[0028] Atomic layer deposition equipment 10, cover body 100, air inlet part 110, first air inlet 111, gas isolation part 120, first exhaust port 121, second air inlet 122, second exhaust port 123, third air inlet 124, lower cover 130, accommodating groove 131, fourth air inlet 132, fifth air inlet 133, isolation groove 134, sixth air inlet 135, reaction chamber 140, first chamber 141, second chamber 142, reaction area 150, supporting platform 200, main body 210, protrusion 220, lining plate 300, third exhaust port 310. DETAILED DESCRIPTION

[0029] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0030] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present invention.

[0031] In the description of the present invention, "several" means more than one, "plurality" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The use of "first" and "second" in the description is solely for the purpose of distinguishing technical features and should not be construed as indicating or implying relative importance, implicitly specifying the number of the indicated technical features, or implicitly specifying the order of the indicated technical features.

[0032] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, and connecting should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0033] In the description of the present invention, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the exemplary expressions of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0034] Please refer to Figure 1 In some embodiments, the atomic layer deposition device 10 includes: a cover 100 and a carrier 200. The cover 100 has a reaction chamber 140, and a reaction gas can be introduced into the reaction chamber 140. The reaction gas includes a first reactant and a second reactant. The first reactant can be a precursor gaseous substance, and the precursor gaseous substance can be a gaseous metal organic compound, metal halide, metal oxide, etc. The second reactant can be an oxidizing and reducing gas, such as oxygen, plasma, or ammonia. When the reaction gas is mentioned below, it refers to the first reactant and the second reactant. Among them, the principle of atomic layer deposition belongs to the well-known technology and will not be described in detail here. The carrier 200 is arranged in the reaction chamber 140. The carrier 200 is used to place the substrate, and the carrier 200 can rotate. The rotation of the carrier 200 can be driven by a rotary motor. The carrier 200 can also provide a uniform temperature for the substrate (that is, the carrier 200 is heated by a heating device to achieve a uniform temperature in the reaction chamber 140), thereby preventing the reaction gas from becoming powder during the reaction and affecting the coating quality. It should be noted that the material and shape of the substrate are not limited, such as: wafers, single crystals, polycrystalline silicon wafers, silicon carbide, silicon nitride substrates, glass substrates, lenses, etc. In the case where the reaction gas is cooled and condenses and adsorbs on the inner wall of the pipe and the inner wall of the reaction chamber 140 to produce powder particles, a heating device can be set from the process of the reaction gas entering the reaction chamber 140 to the discharge to avoid the generation of powder particles.

[0035] Please refer to Figure 4 , wherein, along the rotation direction of the carrier 200, the reaction chamber 140 includes a plurality of reaction areas 150. After the substrate is placed on the carrier 200, different reaction gases can be introduced into the plurality of reaction areas 150, thereby depositing different atomic layers on the substrate. wherein, after each injection of the reaction gas, a gas purge is required to ensure that the gas injected next time is not affected by the previous reaction. therefore, the reaction area 150 is provided with an air inlet 110, and a gas isolation part 120 is provided between two adjacent reaction areas 150, the air inlet 110 is used to introduce the reaction gas, and the gas isolation part 120 is used to isolate the reaction gas in the two adjacent reaction areas 150 (specifically, an inert gas is used to form a gas wall to separate the reaction gas, to prevent the reaction gas from mixing or overflowing, resulting in a gas-phase chemical reaction above the carrier 200, generating dust, etc.). The air inlet 110 includes a first air inlet 111. The shape of the first air inlet 111 is not specifically limited. The first air inlet 111 is used to introduce the reaction gas into the reaction chamber 140. Figure 5 The gas isolation portion 120 includes a first exhaust port 121, a second exhaust port 122, a second exhaust port 123, and a third exhaust port 124, which are sequentially arranged along the direction from the air inlet portion 110 to the gas isolation portion 120. The shapes of the first exhaust port 121, the second air inlet 122, the second exhaust port 123, and the third air inlet 124 are not specifically limited. Among them, the first exhaust port 121, the second air inlet 122, the second exhaust port 123, and the third air inlet 124 can all surround the first air inlet 111. For example, the first exhaust port 121 can be annular in shape, the first exhaust port 121 surrounds the periphery of the first air inlet 111, the second air inlet 122 surrounds the periphery of the first exhaust port 121, the second exhaust port 123 surrounds the periphery of the second air inlet 122, and the third air inlet 124 surrounds the periphery of the second exhaust port 123. The first exhaust port 121 and the second exhaust port 123 are both used to exhaust the gas from the reaction chamber 140, and the second gas inlet 122 and the third gas inlet 124 are both used to introduce an inert gas into the reaction chamber 140. The inert gas may be nitrogen or argon, etc. In addition, it should be noted that during atomic layer deposition, the reaction gas may be introduced into the first gas inlet 111, the first exhaust port 121 may be exhausted, the inert gas may be introduced into the second gas inlet 122, the second exhaust port 123 may be exhausted, and the inert gas may be introduced into the third gas inlet 124, thereby achieving a better isolation effect.

[0036] Specifically, by setting a gas isolation part 120 between two adjacent reaction areas 150, the reaction gas can be separated. Specifically, in order to improve the isolation effect, the gas isolation part 120 includes a first exhaust port 121, a second exhaust port 122, a second exhaust port 123 and a third exhaust port 124 which are sequentially arranged in the direction from the gas inlet part 110 to the gas isolation part 120. In this way, the reaction gas enters the gas inlet part 110 through the first exhaust port 111, and then the first exhaust port 121 is set around the reaction area 150. The first exhaust port 121 can exhaust the reaction gas. Exhaust, thereby preventing the same reaction gas from entering different reaction areas 150. Furthermore, after the second air inlet 122 is introduced into the inert gas, the reaction gas can be effectively prevented from diffusing. The second exhaust port 123 can further exhaust the gas. After the third air inlet 124 is introduced into the inert gas, the gas diffusion is further prevented. In this way, by exhausting and introducing the isolation gas multiple times through the gas isolation part 120, the isolation effect can be effectively improved. After the substrate is placed on the carrier 200, the carrier 200 drives the substrate to rotate together by rotation, thereby performing thin film deposition on the substrate. Due to the good isolation effect, the rotation speed of the carrier 200 can be higher, thereby improving the processing efficiency. Specifically, the atomic layer deposition equipment 10 can achieve a better isolation effect and a faster processing efficiency.

[0037] It should be noted that the first air inlet 111 can be connected to the air inlet device to facilitate the introduction of the reaction gas. The air inlet device can be provided with a pump and a valve, such as an air inlet pump and a regulating valve, so as to be able to adjust the flow rate entering the first air inlet 111. Similarly, the second air inlet 122 and the third air inlet 124 can also be connected to the air inlet device. The first exhaust port 121 can be connected to the exhaust device to discharge the gas in the reaction chamber 140. The exhaust device can exhaust the gas by extracting the gas from the reaction chamber 140. Among them, the valves can also be controlled by different control systems to achieve separate control or full control of the first exhaust port 121, the second air inlet 122, the second exhaust port 123 and the third air inlet 124 in the gas isolation part 120. Specifically, by having different pump groups corresponding to different exhaust positions, it is ensured that the exhausted gas is free of cross-mixing and contamination, thereby extending the service life and maintenance cycle of the pump; the independent regulating valve can adjust the pumping speed and the pressure in the reaction chamber 140 according to the process requirements to ensure the stability of the coating.

[0038] It can be imagined that when atomic layer deposition is performed on the substrate in the reaction chamber 140. The staff can first exhaust the gas, then introduce the reaction gas, then exhaust the gas again, and then introduce the inert gas, and then repeat the cycle again, so as to remove the previous reaction gas and avoid affecting the next reaction. For example, the gas in the reaction chamber 140 is first extracted through the first exhaust port 121 and the second exhaust port 123, and then the reaction gas is introduced through the first air inlet 111. After the reaction gas reacts, it is exhausted through the first exhaust port 121 and the second exhaust port 123 at the same time, and the inert gas is introduced through the second air inlet 122 and the third air inlet 124, so as to ensure that the reaction gases in the two adjacent reaction areas 150 do not contact each other. Furthermore, the reaction chamber 140 includes a plurality of reaction areas 150, and different reaction areas 150 are provided with air inlets 110, and the air inlet 110 can introduce different reaction gases for reaction. In addition, the air inlet 110 may include a spray device, which may be a spray plate. The spray device is provided with a plurality of first air inlets 111 to allow the reaction gas to flow in.

[0039] In order to avoid contact between the reaction gases in two adjacent reaction areas 150, the isolation effect can be improved. Specifically, in some embodiments, a plurality of gas isolation parts 120 are provided between two adjacent reaction areas 150. For example, there can be two gas isolation parts 120. That is, along the direction from the gas inlet 110 to the gas isolation part 120, there are arranged in sequence the first exhaust port 121, the second gas inlet 122, the second exhaust port 123, the third gas inlet 124, the first exhaust port 121 (the first exhaust port 121 is still around the periphery of the first gas inlet 111, but not directly around the periphery of the first gas inlet 111, but at a distance from the first gas inlet 111), the second gas inlet 122, the second exhaust port 123, and the third gas inlet 124. In this way, a better isolation effect is achieved by multiple isolation and multiple exhaust of the reaction gases. It can further prevent the risk of the two reaction gases diffusing outside the reaction area 150. Assume that the reaction gases include A and B. Among them, when the reaction gases A and B diffuse outside the reaction area 150, the setting of the first exhaust port 121 and the second exhaust port 123 can quickly blow A and B away from the capture and discharge reaction chamber 140, thereby avoiding the reaction gases A and B meeting outside the reaction area 150 and causing contamination to the components in the reaction chamber 140.

[0040] Further, please refer to Figure 1In some embodiments, the atomic layer deposition apparatus 10 further includes a lifting mechanism, which is connected to the carrier platform 200. The lifting mechanism can raise or lower the carrier platform 200 so as to move the carrier platform 200 closer to or farther from the first air inlet 111. Specifically, the lifting mechanism includes a motor or a cylinder. After the motor is connected to the carrier platform 200, the motor can drive the carrier platform 200 to rise and fall in the vertical direction. When processing the substrate, the lifting mechanism can bring the carrier platform 200 close to the spray device (the spray device is provided with the first air inlet 111). The smaller the distance between the carrier platform 200 and the spray device, the better the isolation effect between the reaction gases (the first reactant and the second reactant), the more favorable it is for controlling the atomic layer deposition process, that is, the more favorable it is for deposition and film formation, and the better the effect. When it is necessary to remove the substrate from the carrier 200, the carrier 200 is moved away from the spray device through the lifting mechanism, thereby increasing the distance between the carrier 200 and the spray device. At this time, the substrate can be lifted by the lifting of the ejector pin, thereby facilitating the transfer of the substrate by the manipulator. In addition, the lifting mechanism can also facilitate the maintenance of the carrier 200. Specifically, when the carrier 200 needs maintenance, the lifting mechanism can raise the carrier 200, thereby allowing the carrier 200 to leave the reaction chamber 140 (at this time, the cover body 100 can include a lower cover 130 and an upper cover, the lower cover 130 and the upper cover are detachably connected, and the upper cover and the lower cover 130 together form the reaction chamber 140). After the carrier 200 leaves the reaction chamber 140, it is convenient for the staff to clean it.

[0041] Since the lifting mechanism can make the carrier 200 rise and fall, after the carrier 200 rises, there is a gap between the carrier 200 and the lower cover 130 of the cover body 100. When the reaction gas is introduced into the reaction chamber 140, the reaction gas may enter the gap. In addition to the reaction gas, some powder may also accumulate on the back of the carrier 200. Therefore, in order to solve the above problem, the carrier 200 is usually disassembled for cleaning, but this will increase the maintenance environment and cost. Therefore, please refer to Figure 2 In some embodiments, the carrier platform 200 includes a main body 210 and a protrusion 220. The carrier platform 200 may be circular in shape, and the protrusion 220 is connected to the edge of the main body 210 and protrudes downward from the main body 210. The cover body 100 includes a lower cover 130, and the lower cover 130 is provided with a receiving groove 131, and the receiving groove 131 may be annular in shape. The protrusion 220 is slidably arranged in the receiving groove 131, and the protrusion 220 is used to divide the reaction chamber 140 into a first chamber 141 and a second chamber 142 separated from each other. The first chamber 141 and the second chamber 142 are respectively located on both sides of the carrier platform 200. That is, the air inlet part 110 and the gas isolation part 120 are located in the first chamber 141, and the lifting mechanism is located in the second chamber 142. The first chamber 141 and the second chamber 142 can refer to Figure 3.

[0042] Specifically, after the protrusion 220 is disposed in the receiving groove 131, when the carrier 200 rises, the body 210 and the protrusion 220 rise together, and the protrusion 220 slides in the receiving groove 131, thereby dividing the reaction chamber 140 into a first chamber 141 and a second chamber 142 that are separated from each other. The first chamber 141 can be used for reaction, while the second chamber 142 is separated by the protrusion 220, preventing the gas in the first chamber 141 from entering the second chamber 142, thereby preventing the reaction gas or powder from accumulating on the back of the carrier 200 or on the lower cover 130. In addition, it is conceivable that the design of the receiving groove 131 also facilitates the protrusion 220 to be located in the receiving groove 131 when the carrier 200 is lowered, so that one side of the body 210 can be in contact with the lower cover 130, which is conducive to saving space.

[0043] In order to further separate the first cavity 141 and the second cavity 142 and prevent the gas in the first cavity 141 from entering the second cavity 142, an inert gas may be introduced into the receiving tank 131. Figure 2 In some embodiments, the lower cover 130 is further provided with a fourth air inlet 132 in communication with the receiving tank 131. The fourth air inlet 132 is used to introduce an inert gas into the receiving tank 131. After the inert gas is introduced into the receiving tank 131, the inert gas can form an isolation zone in the receiving tank 131, thereby preventing the gas in the first cavity 141 from entering the second cavity 142. It should be noted that a plurality of fourth air inlets 132 can be provided. By providing a plurality of fourth air inlets 132, it is ensured that the gas can diffuse from the fourth air inlet 132, thereby avoiding the phenomenon of gas aggregation caused by an excessively long diffusion path, which is not conducive to achieving a good isolation effect.

[0044] In order to prevent the gas in the first cavity 141 from entering the second cavity 142, in addition to the above-mentioned method, there are other methods. Figure 2 In some embodiments, the second cavity 142 is located on the side of the supporting platform 200 facing the lower cover 130, and the lower cover 130 is further provided with a fifth air inlet 133 connected to the second cavity 142, and the fifth air inlet 133 is used to introduce inert gas into the second cavity 142. By providing the fifth air inlet 133, inert gas is introduced into the second cavity 142. After the second cavity 142 is filled with inert gas, the gas in the first cavity 141 can be prevented from entering the second cavity 142. It should be noted that a plurality of fifth air inlets 133 can be provided. By providing a plurality of fifth air inlets 133, it is ensured that the gas can diffuse from the fifth air inlet 133, and the phenomenon of gas aggregation caused by a too long diffusion path is avoided, which is not conducive to achieving a better isolation effect.

[0045] Furthermore, after the reaction gas combines with or reacts with the substrate, it needs to be quickly discharged from the reaction chamber 140, otherwise the reaction gas may contaminate other components. Figure 2 In some embodiments, the cover 100 is further provided with an isolation groove 134 that is in communication with the reaction chamber 140. The isolation groove 134 is used to accommodate an inert gas. The isolation groove 134 surrounds the periphery of the carrier 200, and the opening of the isolation groove 134 faces the carrier 200. Along the radial direction of the carrier 200, the projection of the carrier 200 partially overlaps with the projection of the isolation groove 134. The partial overlap can be achieved by the projection of the isolation groove 134 falling within the projection range of the carrier 200, or the projection of the carrier 200 falling within the projection range of the isolation groove 134. Since the isolation groove 134 can accommodate an inert gas, after the isolation groove 134 is filled with the inert gas, the inert gas can surround the carrier 200, preventing the reaction gas from contacting other components of the atomic layer deposition apparatus 10, preventing coating on the components, reducing the generation of particles in the chamber, and extending the maintenance cycle of the equipment.

[0046] Further, please refer to Figure 2 In some embodiments, the cover body 100 is further provided with a sixth air inlet 135 connected to the isolation groove 134, and the sixth air inlet 135 is used to introduce an inert gas into the isolation groove 134. The sixth air inlet 135 is provided on the wall surface of the isolation groove 134 at one end away from the supporting platform 200. In addition, the sixth air inlet 135 can also be provided at the top of the lower cover 130, extending toward the bottom of the lower cover 130. And, the sixth air inlet 135 can also be provided at the bottom of the upper cover, extending toward the top of the upper cover. This can reduce the space occupied by the sixth air inlet 135. By introducing an inert gas into the sixth air inlet 135, the isolation groove 134 is filled with the inert gas, forming an annular gas isolation zone, which can prevent the reaction gas from escaping to other areas. It should be noted that multiple sixth air inlets 135 can be set. By setting multiple sixth air inlets 135, it is ensured that the gas can diffuse from the sixth air inlet 135, avoiding the phenomenon of gas aggregation caused by the diffusion path being too long, which is not conducive to achieving a better isolation effect.

[0047] After the sixth air inlet 135 introduces inert gas into the isolation groove 134, the isolation groove 134 is filled with inert gas, which can achieve an isolation effect. In order to further improve the isolation effect, the inert gas can be introduced into the isolation groove 134 while being extracted. That is, the inert gas is dynamically flowed in the isolation groove 134, thereby achieving the isolation effect. For details, please refer to Figure 2 and Figure 6In some embodiments, the atomic layer deposition apparatus 10 further includes a liner 300 disposed between the cover 100 and the carrier 200. The liner 300 is used to cover at least a portion of the opening of the isolation groove 134. The liner 300 is also provided with a third exhaust port 310 in communication with the isolation groove 134. The third exhaust port 310 is used to exhaust the gas within the isolation groove 134. The inert gas enters through the sixth gas inlet 135, then fills the isolation groove 134 and is then exhausted through the third exhaust port 310. In this way, a good isolation effect is achieved through the dynamic flow of the inert gas in the isolation groove 134. A plurality of third exhaust ports 310 can be provided, and the plurality of third exhaust ports 310 can be arranged in multiple rows. The third exhaust ports 310 can also be tilted to better control the directionality of the isolation gas and prevent the generation of dust particles at the bottom of the reaction chamber 140. Of course, the third exhaust port 310 can also be configured as a straight hole to facilitate injection.

[0048] Furthermore, the third exhaust port 310 can be integrally formed with the liner 300. Alternatively, the third exhaust port 310 can be separated from the liner 300. This facilitates adjustment of the size, density, and direction of the third exhaust port 310 during process adjustments, thereby achieving a more ideal effect.

[0049] Specifically, in some embodiments, the liner 300 is detachably connected to the carrier 200. Specifically, the liner 300 can be disposed between the cover 100 and the carrier 200 so that the liner 300 is detachably connected to the carrier 200. The liner 300 can extend the service life and maintenance cycle of the carrier 200 because, after the liner 300 is attached to the carrier 200, reactants can react on the liner 300 rather than on the carrier 200. If the liner 300 becomes severely contaminated, it can be directly removed for cleaning or replacement.

[0050] While the embodiments of the present invention have been described in detail above with reference to the accompanying drawings, the present invention is not limited to the embodiments described above. Various modifications may be made within the scope of knowledge possessed by a person skilled in the art without departing from the spirit of the present invention. Furthermore, the embodiments of the present invention and the features thereof may be combined with one another unless there is a conflict.

Claims

1. Atomic layer deposition equipment, characterized in that include: A cover body having a reaction chamber; A carrier platform is provided in the reaction chamber, the carrier platform is used to place the substrate, and the carrier platform is rotatable; wherein, along the rotation direction of the carrier platform, the reaction chamber comprises a plurality of reaction areas, the reaction areas are provided with a gas inlet portion, and a gas isolation portion is provided between two adjacent reaction areas, wherein the gas inlet portion comprises a first gas inlet, the first gas inlet is used to allow reaction gas to enter the reaction chamber, the gas isolation portion comprises a first exhaust port, a second gas inlet, a second exhaust port and a third gas inlet, the first exhaust port surrounds the periphery of the first gas inlet, the second gas inlet surrounds the periphery of the first exhaust port, the second exhaust port surrounds the periphery of the second gas inlet, the third gas inlet surrounds the periphery of the second exhaust port, the first exhaust port and the second exhaust port are both used to allow gas to be discharged from the reaction chamber, and the second gas inlet and the third gas inlet are both used to introduce inert gas into the reaction chamber; The atomic layer deposition apparatus further includes a lifting mechanism connected to the carrier platform, and the lifting mechanism is capable of raising or lowering the carrier platform so as to move the carrier platform closer to or away from the first air inlet; The supporting platform includes a main body and a protruding portion, the protruding portion is connected to the edge of the main body and protrudes downward from the main body, the cover body includes a lower cover, the lower cover is provided with a receiving groove, the protruding portion is slidably arranged in the receiving groove, the protruding portion is used to divide the reaction chamber into a first chamber and a second chamber separated from each other, the air inlet portion and the gas isolation portion are arranged in the first chamber, and the lifting mechanism is arranged in the second chamber.

2. The atomic layer deposition apparatus according to claim 1, wherein: A plurality of gas isolation parts are provided between two adjacent reaction areas.

3. The atomic layer deposition apparatus according to claim 1, wherein: The lower cover is further provided with a fourth air inlet communicated with the containing tank, and the fourth air inlet is used to introduce the inert gas into the containing tank.

4. The atomic layer deposition apparatus according to claim 1, wherein: The lower cover is further provided with a fifth air inlet communicated with the second cavity, and the fifth air inlet is used to introduce the inert gas into the second cavity.

5. The atomic layer deposition apparatus according to claim 1, wherein: The cover body is also provided with an isolation groove connected to the reaction chamber, the isolation groove is used to accommodate the inert gas, the isolation groove surrounds the periphery of the supporting platform, and the opening of the isolation groove faces the supporting platform. Along the radial direction of the supporting platform, the projection of the supporting platform partially overlaps with the projection of the isolation groove.

6. The atomic layer deposition apparatus according to claim 5, characterized in that: The cover body is further provided with a sixth air inlet connected to the isolation groove, and the sixth air inlet is used to introduce the inert gas into the isolation groove. The sixth air inlet is provided on the wall surface of the isolation groove at one end away from the supporting platform.

7. The atomic layer deposition apparatus according to claim 6, wherein: The atomic layer deposition equipment also includes a lining plate, which is arranged between the cover body and the supporting platform. The lining plate is used to cover at least part of the opening of the isolation groove. The lining plate is also provided with a third exhaust port connected to the isolation groove, and the third exhaust port is used to discharge the gas in the isolation groove.

8. The atomic layer deposition apparatus according to claim 7, wherein: The lining plate is detachably connected to the supporting platform.

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