Mask and method of manufacturing the same, oblique evaporation method, superconducting circuit
By using an undercut mask during the oblique evaporation deposition process, the problem of edge lifting of the superconducting film was solved, ensuring the deposition quality of the superconducting film and adapting to the performance improvement of superconducting quantum chips.
Patent Information
- Application Number
- CN202311255309.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-26
- Publication Date
- 2026-02-17
- Estimated Expiration
- 2043-09-26
AI Technical Summary
In existing technologies, superconducting films are prone to edge lifting during oblique evaporation, which affects the performance of superconducting quantum chips.
A mask consisting of a first photoresist layer and a second photoresist layer is used to form an undercut structure. Oblique evaporation deposition is performed through the first window and the second window to ensure that the film layer is formed only on the sidewall of the second photoresist layer and to avoid contact with the substrate during peeling.
This effectively prevents the edges of the superconducting film from lifting, ensuring the deposition quality of the superconducting film and improving the performance of the superconducting quantum chip.
Smart Images
Figure CN117328015B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of superconducting circuit manufacturing, in particular to a mask and a manufacturing method thereof, an oblique evaporation plating method and a superconducting circuit. BACKGROUND
[0002] A superconducting quantum chip is composed of a plurality of superconducting circuits, and the superconducting circuit is composed of superconducting layers stacked according to a certain rule. In the preparation process of the superconducting circuit, the superconducting layers are mostly deposited by an evaporation process, and oblique evaporation is the most commonly used deposition process.
[0003] As shown in Figure 1 , it is a process step schematic diagram of the prior art for oblique evaporation plating. In the process of depositing the superconducting layer by oblique evaporation, referring to Figure 1 (a), a single layer of photoresist 102 is first coated on a substrate 101, and a window 103 is formed on the photoresist 102 (only part of the window is shown schematically in the figure); referring to Figure 1 (b), then the oblique evaporation plating is carried out through the window 103 in the direction B of the arrow shown in the figure to form a superconducting film 104 on the substrate 101; referring to Figure 1 (c), finally, the photoresist 102 is stripped. As shown in Figure 1 (c), since a part of the superconducting film will be plated on the side wall of the photoresist 102 during the oblique evaporation plating, and will be integrated with the superconducting film 104, the superconducting film on the side wall will be left after the photoresist 102 is stripped, thereby causing the edge of the superconducting film 104 to be raised. The present inventors have found through long-term research that the edge of the superconducting film being raised will affect the performance of the superconducting quantum chip. Therefore, how to avoid the edge of the superconducting film being raised during the deposition of the superconducting material is a problem that needs to be solved at present. SUMMARY
[0004] The purpose of the present application is to provide a mask and a manufacturing method thereof, an oblique evaporation plating method and a superconducting circuit, so as to solve the problem that the edge of the superconducting film will be raised in the prior art, and to avoid the edge of the superconducting film being raised during the deposition of the superconducting film.
[0005] To solve the above technical problems, the present application provides a mask for oblique evaporation plating, comprising:
[0006] a first photoresist layer, formed on a substrate, the first photoresist layer being formed with a first window exposing the substrate;
[0007] a second photoresist layer, formed on the first photoresist layer, the second photoresist layer being formed with a second window exposing the first window, the edge of the first window towards the plating direction exceeding the edge of the second window, so as to constitute an undercut structure.
[0008] Preferably, the edge of the first window in a direction other than the film coating direction is flush with the edge of the second window.
[0009] Preferably, the thickness of the second photoresist layer is greater than the thickness of the first photoresist layer.
[0010] To solve the above technical problems, the application further provides a manufacturing method of a mask for oblique evaporation film coating, comprising:
[0011] forming a first photoresist layer and a second photoresist layer on a substrate in sequence;
[0012] forming a first window exposing the substrate on the first photoresist layer and a second window exposing the first window on the second photoresist layer;
[0013] wherein the edge of the first window towards the film coating direction exceeds the edge of the second window to form an undercut structure.
[0014] Preferably, the first photoresist layer and the second photoresist layer are both electron beam photoresists, and the exposure dose of the first photoresist layer is lower than that of the second photoresist layer.
[0015] Preferably, the developing solution used when developing the first photoresist layer and the second photoresist layer is the same, and the developing speed of the first photoresist layer is higher than that of the second photoresist layer.
[0016] Preferably, the forming of the first window exposing the substrate on the first photoresist layer and the second window exposing the first window on the second photoresist layer comprises:
[0017] determining a first exposure area on the second photoresist layer and a second exposure area connecting the first exposure area in the film coating direction;
[0018] exposing the first exposure area based on the exposure dose of the second photoresist layer to form a first pattern on the first photoresist layer and a second pattern on the second photoresist layer respectively;
[0019] exposing the second exposure area based on the exposure dose of the first photoresist layer to make the edge of the first pattern towards the film coating direction exceed the edge of the second pattern;
[0020] developing the first pattern to obtain the first window exposing the substrate and developing the second pattern to obtain the second window exposing the first window.
[0021] Preferably, the forming the first window exposing the substrate on the first photoresist layer and the second window exposing the first window on the second photoresist layer comprises:
[0022] determining a first exposure area on the second photoresist layer and a second exposure area connecting the first exposure area in the film deposition direction;
[0023] exposing the second exposure area based on the exposure dose of the first photoresist layer to form a third pattern on the first photoresist layer;
[0024] exposing the first exposure area based on the exposure dose of the second photoresist layer to form a first pattern connecting the third pattern on the first photoresist layer and a second pattern on the second photoresist layer;
[0025] developing the first pattern and the third pattern to obtain the first window exposing the substrate and developing the second pattern to obtain the second window exposing the first window.
[0026] To solve the above technical problem, the application further provides a slant evaporation film deposition method, comprising:
[0027] forming the mask on the substrate or forming the mask on the substrate according to the mask manufacturing method;
[0028] carrying out slant evaporation film deposition through the first window and the second window in the film deposition direction to form a film layer on the substrate.
[0029] To solve the above technical problem, the application further provides a superconducting circuit, comprising a superconducting pad and a Josephson junction composed of two superconducting wires with an overlapping area, each of the superconducting wires is connected with the superconducting pad, and the superconducting wire and / or the superconducting pad is obtained by the slant evaporation film deposition method according to claim 9.
[0030] Different from the prior art, the mask provided by the application comprises a first photoresist layer and a second photoresist layer, the first photoresist layer is used to form on the substrate to form a first window exposing the substrate, the second photoresist layer is formed on the first photoresist layer to form a second window exposing the first window, the edge of the first window towards the film deposition direction exceeds the edge of the second window to form an undercut structure, when the slant evaporation film deposition superconducting film is carried out by using the mask, the sidewall of the first photoresist layer is shielded by the second photoresist layer, and the film layer is only deposited on the sidewall of the second photoresist layer, and the second photoresist layer has a gap with the substrate, so the film layer on the sidewall of the second photoresist layer is not connected with the film layer on the substrate, when the photoresist is stripped, the film layer on the sidewall of the second photoresist layer is removed together, so that the edge of the superconducting film can be prevented from being raised when the superconducting film deposition is carried out.
[0031] The manufacturing method of the mask, the oblique evaporation plating method and the superconducting circuit provided by the present application belong to the same inventive concept and have the same technical effects as the aforementioned mask, and thus will not be described here again. BRIEF DESCRIPTION OF DRAWINGS
[0032] Figure 1 A process diagram of the oblique evaporation plating in the prior art.
[0033] Figure 2 A sectional structure diagram of the mask provided by the embodiment of the present application.
[0034] Figure 3 A diagram of the manufacturing method of the mask provided by another embodiment of the present application.
[0035] Figure 4 A diagram of a photolithography process for the first window and the second window.
[0036] Figure 5 A diagram of another photolithography process for the first window and the second window.
[0037] Figure 6 A diagram of the oblique evaporation plating method provided by another embodiment of the present application.
[0038] Figure 7 A top view structure diagram of the superconducting circuit provided by yet another embodiment of the present application. DETAILED DESCRIPTION
[0039] The specific embodiments of the present application will be described in more detail below with reference to the accompanying drawings. The advantages and features of the present application will be more apparent from the following description and claims. It should be noted that the drawings are very simplified and use non-precise proportions, and are only used to facilitate and clarify the purpose of assisting the description of the embodiments of the present application.
[0040] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "left", "right", and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and thus cannot be understood as indicating or implying that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus cannot be understood as limiting the present application.
[0041] In addition, the terms "first", "second", etc. are used only for descriptive purposes and are not to be construed as indicating or implying relative importance or a specific number of the indicated technical characteristics. Thus, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is at least two, for example, two, three, etc., unless otherwise explicitly and specifically limited.
[0042] Please refer to Figure 2 The embodiment of the present application provides a mask used for oblique evaporation plating. The mask comprises a first photoresist layer 10 and a second photoresist layer 20.
[0043] The first photoresist layer 10 is used to be formed on a substrate 1, and the first photoresist layer 10 is formed with a first window 11 exposing the substrate 1. The first photoresist layer 10 can be formed by coating photoresist on the surface of the substrate 1 through a spin coating process, and the photoresist has good performance in film forming property, imprint performance (such as hardness and viscosity, curing speed, interface property, etc.), etching resistance, etc. In specific implementation, the first photoresist layer 10 can be selected from positive photoresist or negative photoresist.
[0044] The second photoresist layer 20 is formed on the first photoresist layer 10, and the second photoresist layer 20 is formed with a second window 21 exposing the first window 11, and the edge of the first window 11 towards the plating direction A exceeds the edge of the second window 21 to form an undercut structure. The second photoresist layer 20 can be formed by coating photoresist on the surface of the first photoresist layer 10 through a spin coating process. In specific implementation, the first photoresist layer 10 can be selected from positive photoresist or negative photoresist. The first photoresist layer 10 and the second photoresist layer 20 can be photoresist with the same photosensitivity, for example, both are electron beam photoresist, or can be photoresist with different photosensitivity, for example, one is electron beam photoresist and the other is ultraviolet photoresist.
[0045] Since the first photoresist layer 10 and the second photoresist layer 20 form an undercut structure in the film deposition direction A, the second window 21 of the second photoresist layer 20 does not expose the complete first window 11, that is, the second photoresist layer 20 forms a suspended part on the first window 11, and a gap with a thickness of the thickness of the first photoresist layer 10 is formed between the suspended part and the substrate 1. When using a mask to perform oblique evaporation film deposition, the film deposition direction A forms a certain angle with the surface of the substrate 1. In the film deposition direction A, the evaporated material only contacts the surface of the substrate 1 exposed by the second window 21 and the sidewall of the second photoresist layer 20. Since the suspended part of the second photoresist layer 20 shields the sidewall of the first photoresist layer 10, the sidewall of the first photoresist layer 10 does not contact the evaporated material, so the film layer on the sidewall of the second photoresist layer 20 does not contact the film layer on the surface of the substrate 1. After the mask is removed, the film layer on the sidewall of the second photoresist layer 20 is also removed, and only the film layer on the surface of the substrate 1 is retained, so the film layer on the surface of the substrate 1 does not have the phenomenon of edge lifting.
[0046] It should be noted that the film deposition direction A can be more than one direction, for example, it can include the direction from left to right, and also include the direction from right to left, so that the first window 11 forms an undercut structure on both left and right sides.
[0047] In some embodiments of the present application, the edge of the first window 11 in other directions than the film deposition direction A is flush with the edge of the second window 21. Assuming that the shape of the first window 11 is a rectangle with a length much greater than a width, the film deposition direction A is only one direction, which is parallel to the length direction of the rectangle and towards the left side of the rectangle (that is, the left direction in the figure), then in the direction parallel to the width direction of the rectangle and towards the top and bottom of the rectangle, and the direction parallel to the length direction of the rectangle and towards the right side of the rectangle, the edge of the first window 11 is flush with the edge of the second window 21, while towards the film deposition direction A, the edge of the first window 11 exceeds the edge of the second window 21.
[0048] In some embodiments of the present application, the thickness of the second photoresist layer 20 is greater than the thickness of the first photoresist layer 10. The thicker the thickness of the photoresist, the longer the developing time when developing, and vice versa. The thickness of the second photoresist layer 20 being greater than the thickness of the first photoresist layer 10 can make the first photoresist layer 10 dissolve more under the same developing time, and thus more easily form an undercut structure.
[0049] By the above manner, the mask of the embodiment of the application is formed with the undercut structure, when the oblique evaporation plating is performed, the sidewall of the first photoresist layer is shielded by the second photoresist layer, and the film layer is plated only on the sidewall of the second photoresist layer, and the sidewall of the second photoresist layer has a gap with the substrate, so that the film layer on the sidewall of the second photoresist layer is not connected with the film layer on the substrate, when the photoresist is stripped, the film layer on the sidewall of the second photoresist layer is removed together, so that the edge of the superconducting film can be prevented from being lifted up when the superconducting film is deposited.
[0050] Please refer to Figure 3 , and in combination with Figure 2 , another embodiment of the application provides a manufacturing method of a mask, which is used for oblique evaporation plating. The manufacturing method comprises:
[0051] As shown in Figure 3 (a), a first photoresist layer 10 and a second photoresist layer 20 are formed on a substrate 1 in sequence;
[0052] As shown in Figure 3 (b), a first window 11 exposing the substrate 1 is formed on the first photoresist layer 10, and a second window 21 exposing the first window 11 is formed on the second photoresist layer 20;
[0053] Wherein, the edge of the first window 11 towards the plating direction A exceeds the edge of the second window 21, so as to form an undercut structure.
[0054] In the embodiment, the photoresist can be coated on the surface of the substrate 1 by a spin coating process to form the first photoresist layer 10, and the photoresist can be coated on the surface of the first photoresist layer 10 by a spin coating process to form the second photoresist layer 20.
[0055] In the embodiment, the first photoresist layer 10 and the second photoresist layer 20 are both electron beam photoresists, and the exposure dose of the first photoresist layer 10 is lower than that of the second photoresist layer 20. Further, the same developing solution can be used for the first photoresist layer 10 and the second photoresist layer 20 when developing, and the developing speed of the first photoresist layer 10 is higher than that of the second photoresist layer 20.
[0056] Since the first photoresist layer 10 and the second photoresist layer 20 are both electron beam photoresists, the first window 11 and the second window 21 can be formed by various photoetch processes.
[0057] Please refer to Figure 4 , which is a schematic diagram of a photoetch process of the first window and the second window. The first window 11 exposing the substrate 1 is formed on the first photoresist layer 10, and the second window 21 exposing the first window 11 is formed on the second photoresist layer 20, which comprises:
[0058] As shown in Figure 4(a) shows that the first exposure area 20A is determined on the second photoresist layer 20 and the second exposure area 20B is determined on the first photoresist layer 10 and connected to the first exposure area 20A in the coating direction A.
[0059] As shown in Figure 4 (b) shows that the first exposure area 20A is exposed based on the exposure dose of the second photoresist layer 20 to form the first pattern 11A and the second pattern 21A on the first photoresist layer 10 and the second photoresist layer 20 respectively. Since the exposure dose of the first photoresist layer 10 is lower than that of the second photoresist layer 20, the first photoresist layer 10 and the second photoresist layer 20 in the first exposure area 20A can be exposed at the same time when exposed based on the exposure dose of the second photoresist layer 20, and the range of the first pattern 11A and the second pattern 21A is consistent with the first exposure area 20A.
[0060] As shown in Figure 4 (c) shows that the second exposure area 20B is exposed based on the exposure dose of the first photoresist layer 10 to make the edge of the first pattern 11A towards the coating direction A beyond the edge of the second pattern 21A. In the process of exposing the electron beam photoresist, the main role of exposure is the secondary electron. In the process of exposure, part of the incident electrons lose energy and are absorbed by the polymer in the process of inelastic scattering, and the other part forms secondary electrons after scattering in the photoresist and the substrate. Since the exposure dose is based on the exposure dose of the first photoresist layer 10, which is lower than that of the second photoresist layer 20, the energy of the secondary electrons is small, and only the first photoresist layer 10 in the second exposure area 20B can be exposed, so the first pattern 11A is widened, and the second pattern 21A remains basically unchanged.
[0061] As shown in Figure 4 (d) shows that the first window 11 of the exposed substrate 1 is obtained by developing the first pattern 11A, and the second window 21 of the exposed first window 11 is obtained by developing the second pattern 21A. Wherein, the photoresist corresponding to the first pattern 11A and the photoresist corresponding to the second pattern 21A can be dissolved at one time to obtain the first window 11 and the second window 21, and then the undercut structure is obtained, in the developing solution of the first photoresist layer 10 and the second photoresist layer 20. And if the developing speed of the first photoresist layer 10 is higher than that of the second photoresist layer 20, the photoresist corresponding to the first pattern 11A can be dissolved faster, which is more conducive to the formation of the undercut structure.
[0062] Please refer to Figure 5 , which is a schematic diagram of another photoetching process of the first window and the second window. The first window 11 of the exposed substrate 1 is formed on the first photoresist layer 10, and the second window 21 of the exposed first window 11 is formed on the second photoresist layer 20, which includes:
[0063] As shown inFigure 5 (a) as shown, the first exposure area 20A is determined on the second photoresist layer 20 and the second exposure area 20B connecting the first exposure area 20A in the coating direction A.
[0064] As Figure 5 (b) as shown, the second exposure area 20B is exposed based on the exposure dose of the first photoresist layer 10 to form the third pattern 31B on the first photoresist layer 10. Since the exposure dose of the first photoresist layer 10 is lower than that of the second photoresist layer 20, the secondary electron energy can only expose the first photoresist layer 10 when exposed based on the exposure dose of the second photoresist layer 20, so only the third pattern 31B can be formed on the first photoresist layer 10. Moreover, the range of the third pattern 31B is consistent with the second exposure area 20B.
[0065] As Figure 5 (c) as shown, the first exposure area 20A is exposed based on the exposure dose of the second photoresist layer 20 to form the first pattern 11B connecting the third pattern 31B on the first photoresist layer 10 and the second pattern 21B on the second photoresist layer 20. Since the exposure dose of the first photoresist layer 10 is lower than that of the second photoresist layer 20, the first photoresist layer 10 and the second photoresist layer 20 in the first exposure area 20A can be exposed at the same time when exposed based on the exposure dose of the second photoresist layer 20. Moreover, the range of the first pattern 11B and the second pattern 21B is consistent with the first exposure area 20A.
[0066] As Figure 5 (d) as shown, the first window 11 of the exposed substrate 1 is obtained by developing the first pattern 11B and the third pattern 31B, and the second window 21 exposing the first window 11 is obtained by developing the second pattern 21B. Wherein, the photoresist corresponding to the first pattern 11A and the photoresist corresponding to the second pattern 21A can be dissolved at one time to obtain the first window 11 and the second window 21, and further to obtain the undercut structure, in the case that the developing solution of the first photoresist layer 10 and the second photoresist layer 20 are the same. Moreover, if the developing speed of the first photoresist layer 10 is higher than that of the second photoresist layer 20, the photoresist corresponding to the third pattern 31B can be dissolved faster, which is more conducive to forming the undercut structure.
[0067] Please refer to Figure 6 , and in combination with Figure 2 as shown, another embodiment of the present application provides a slant evaporation coating method. The method comprises:
[0068] As Figure 6 (a) as shown, the mask of the foregoing embodiment is formed on the substrate 1, or the mask is formed on the substrate 1 according to the manufacturing method of the mask of the foregoing embodiment.
[0069] As Figure 6 (b) shows that the oblique evaporation film forming method is performed through the first window 11 and the second window 21 in the film forming direction A to form the film layer 3 on the substrate 1.
[0070] Since the undercut structure is formed on the mask in the film forming direction A, when the oblique evaporation film forming is performed, the film layer on the sidewall of the second photoresist layer 20 is not connected with the film layer 3 on the substrate 1, and when the photoresist is peeled off, the film layer on the sidewall of the second photoresist layer 20 is removed together, so that when the superconducting film is deposited, the edge of the superconducting film is prevented from being lifted.
[0071] In some embodiments of the present application, as shown in Figure 6 (c), the oblique evaporation film forming method can further include: removing the mask. The removal of the mask can be a peeling process or the like.
[0072] Please refer to Figure 7 , another embodiment of the present application provides a superconducting circuit, including a superconducting pad PAD and a Josephson junction composed of two superconducting wires JJ with an overlapping area, each superconducting wire JJ is connected with the superconducting pad PAD, the superconducting wire JJ and / or the superconducting pad PAD is obtained by the oblique evaporation film forming method of the foregoing embodiment, and the Josephson junction is formed in the overlapping area of the two superconducting wires JJ. Since the edge of the film layer is not lifted during film forming, the edge of the superconducting wire JJ and / or the superconducting pad PAD will not be lifted.
[0073] In the description of the present application, the description of the terms "one embodiment", "some embodiments", "an example" or "a specific example" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In the description of the present application, the illustrative description of the above terms is not necessarily for the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in the present application.
[0074] The above is only the preferred embodiment of the present application, and does not limit the present application in any way. Any person skilled in the art can make any form of equivalent replacement or modification of the technical solutions and technical contents disclosed in the present application without departing from the scope of the technical solutions of the present application, which still belongs to the protection scope of the present application.
Claims
1. A method of manufacturing a mask for oblique evaporation coating, characterized by, The method comprises the following steps: forming a first photoresist layer and a second photoresist layer on a substrate in sequence, wherein the exposure dose of the first photoresist layer is lower than that of the second photoresist layer; forming a first window exposing the substrate on the first photoresist layer and a second window exposing the first window on the second photoresist layer; wherein the edge of the first window towards the film coating direction exceeds the edge of the second window to form an undercut structure; the step of forming the first window exposing the substrate on the first photoresist layer and the second window exposing the first window on the second photoresist layer comprises: determining a first exposure area on the second photoresist layer and a second exposure area connecting the first exposure area in the film coating direction; exposing the first exposure area based on the exposure dose of the second photoresist layer to form a first pattern and a second pattern on the first photoresist layer and the second photoresist layer respectively; exposing the second exposure area based on the exposure dose of the first photoresist layer to make the edge of the first pattern towards the film coating direction exceed the edge of the second pattern; developing the first pattern to obtain the first window exposing the substrate and developing the second pattern to obtain the second window exposing the first window; alternatively, the step of forming the first window exposing the substrate on the first photoresist layer and the second window exposing the first window on the second photoresist layer comprises: determining a first exposure area on the second photoresist layer and a second exposure area connecting the first exposure area in the film coating direction; exposing the second exposure area based on the exposure dose of the first photoresist layer to form a third pattern on the first photoresist layer; exposing the first exposure area based on the exposure dose of the second photoresist layer to form a first pattern connecting the third pattern on the first photoresist layer and a second pattern on the second photoresist layer; developing the first pattern and the third pattern to obtain the first window exposing the substrate and developing the second pattern to obtain the second window exposing the first window.
2. The production method according to claim 1, characterized by The first photoresist layer and the second photoresist layer are both electron beam photoresist.
3. The production method according to claim 2, characterized by The developing solution used when developing the first photoresist layer and the second photoresist layer is the same, and the developing speed of the first photoresist layer is higher than that of the second photoresist layer.
4. The production method according to claim 1, characterized by The edge of the first window in other directions than the film coating direction is flush with the edge of the second window.
5. The production method according to claim 1, characterized by The thickness of the second photoresist layer is greater than that of the first photoresist layer.
6. A method of oblique evaporation coating, characterized by The method comprises the following steps: forming a mask on the substrate according to the manufacturing method of the mask in any one of claims 1 to 5; forming a film layer on the substrate by oblique evaporation film coating through the first window and the second window in the film coating direction.
7. A superconducting circuit, comprising: The superconducting pad and the Josephson junction composed of two superconducting wires with an overlapping area, each of the superconducting wires is connected with the superconducting pad, and the superconducting wire and / or the superconducting pad are obtained by the oblique evaporation film coating method in claim 6.
Citation Information
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