A method for quickly identifying the conduction characteristics of silicon carbide power transistors under high-temperature irradiation environment

Abstract

The present invention relates to a method for quickly identifying the conduction characteristics of a silicon carbide power transistor under a high-temperature irradiation environment. The device involved in the method is composed of a blast drying oven, a sample test plate, an adapter, a conduction test module, and a computer. During the irradiation process, the temperature of the blast drying oven is controlled by a remote controller. The test software in the computer is used to set a voltage test to obtain the conduction characteristic data of the silicon carbide vertical double-diffused transistor, and then the conduction characteristic curve is optimized and fitted to change with temperature. The blast drying oven and the sample test plate are then placed in a cobalt-60 gamma ray irradiation chamber to obtain the conduction characteristic curve of the silicon carbide power transistor under a high-temperature irradiation environment. The transistor conduction characteristic curves obtained by the test before and after irradiation are compared to quickly determine whether there will be a serious impact on the conduction performance of the device. The present invention can quickly and accurately identify the degree of conduction damage of the silicon carbide power transistor under a high-temperature irradiation environment, providing important reference information for engineers and researchers in related fields.

Description

Technical Field

[0001] The present invention relates to the field of power device testing technology, and in particular to a method for rapidly identifying the conduction characteristics of a silicon carbide power transistor under a high-temperature radiation environment, and relates to the fields of electronic technology and radiation-resistant reinforcement technology. Background Art

[0002] Third-generation semiconductor materials, represented by silicon carbide (SiC) and gallium nitride (GaN), are ideal materials for the preparation of high-power density, high-frequency, low-loss electronic devices due to their wide bandgap, high electron saturation drift velocity, high thermal conductivity, and large breakdown field strength. Among them, SiC power devices have the advantages of high energy density, low loss, and small size, and have broad application prospects in new energy vehicles, photovoltaics, rail transportation, big data and other fields. Silicon carbide chips also have good radiation resistance in high-temperature environments. Some application scenarios, such as space exploration and nuclear energy, have high radiation environments. Traditional silicon chips are prone to energy dispersion under radiation, which affects the normal operation of the chip. Silicon carbide chips have strong radiation resistance and can maintain stable performance in high-radiation environments to ensure the normal operation of the system.

[0003] To reduce the harmful effects of space radiation on spacecraft, electronic components must be radiation-resistant. Space radiation primarily originates from galactic cosmic rays, solar cosmic rays, and charged particles from Earth's radiation belts, such as protons, heavy ions, and electrons. These charged particles can cause single-event effects (SEEs), total ionizing dose (TID), and displacement damage (DD) in electronic components.

[0004] Spacecraft have set radiation resistance requirements for electronic components based on the importance of the mission and the severity of the orbital environment. For example, in long-life satellites in Earth orbit, electronic components are generally required to have a linear energy transfer (LET) greater than 75 MeVcm to resist single event burnout (SEB). 2 / mg capacity.

[0005] For most semiconductor materials, the average energy required to generate an electron-hole pair from high-energy particle impact is approximately 3-5 times the bandgap. However, SiC has a wider bandgap, so theoretically, SiC devices have superior ionizing radiation resistance, including single-event effect resistance, to Si devices.

[0006] Therefore, SiC devices have potential advantages in space applications, and can better cope with the damage caused by space radiation. Further research on the damage characteristics of SiC devices under different temperature radiation environments will help improve the reliability and stability of spacecraft.

[0007] Although studies have shown that under normal terrestrial operating conditions, the threshold voltage of SiC MOSFETs decreases linearly with increasing ambient temperature, the on-resistance of SiC MOSFETs can drift under high-temperature gate stress. However, how does the increased ambient operating temperature affect the conduction characteristics of SiC MOSFETs in the radiation environment of space? Will radiation and temperature effects couple with each other? And how will these effects affect device performance? Currently, systematic research on these issues is limited, and a large amount of experimental data and in-depth mechanistic research are still needed.

[0008] Charged particles from galactic cosmic rays, solar cosmic rays, and the Earth's radiation belt, such as protons, heavy ions, and electrons, can affect the conduction characteristics of silicon carbide power transistors. In order to quickly identify the conduction characteristics of silicon carbide power transistors under different temperature irradiation environments, the following strategies can be used:

[0009] 1. Current-Voltage Characteristics Test: By measuring the current-voltage characteristic curve of a silicon carbide power transistor at different temperatures, the device's conduction characteristics can be evaluated. Comparing the characteristic curves before and after irradiation, observe whether the relationship between current and voltage has changed. If there is a significant change, it can be determined that the device has been affected by the irradiation environment.

[0010] 2. On-resistance test: Measures the resistance of silicon carbide power transistors in the on state. Radiation damage may increase the transistor's resistance, affecting its conduction characteristics. By comparing test results, the extent of radiation damage to the device can be quickly identified.

[0011] 3. Power Consumption Current Test: By measuring the power consumption current of SiC power transistors before and after irradiation, the device's energy consumption can be assessed. Radiation damage may increase the power consumption current, thereby affecting the conduction characteristics. By comparing the test results, it is possible to determine whether the device has been damaged by radiation.

[0012] 4. Thermal parameter testing: Thermal parameter testing methods are used to measure changes in device parameters such as thermal resistance and thermal capacitance at different temperatures. Radiation damage can cause changes in the thermal characteristics of transistors. By comparing test results, the extent of radiation damage to the device can be quickly identified. Using these strategies, the conduction characteristics of silicon carbide power transistors exposed to different temperature radiation environments can be quickly identified. These methods can provide important information about device performance and reliability, helping to evaluate device operation under radiation conditions.

[0013] The present invention proposes a method for rapidly identifying the conduction characteristics of silicon carbide power transistors exposed to high-temperature radiation. This method can rapidly detect the degree of damage to the conduction characteristics of high-power silicon carbide vertical double-diffused transistors exposed to different temperature radiation environments. This method eliminates the need to set complex parameters based on specific devices, thus offering a degree of versatility. This method addresses the difficulty of accurately determining whether high-temperature radiation exposure to silicon carbide vertical double-diffused transistors has significantly impacted their conduction performance, providing an effective and feasible method for in-depth analysis of their structure and radiation effects. Summary of the Invention

[0014] The present invention aims to address the difficulty of accurately determining whether a silicon carbide vertical double-diffused transistor (SiC) is seriously affected by radiation exposure at different temperatures. A method for rapidly identifying the conduction characteristics of SiC power transistors under high-temperature irradiation is provided. The method comprises an apparatus comprising a forced-air drying oven, a sample test board, an adapter, a conduction test module, and a computer. During irradiation, the temperature of the forced-air drying oven is controlled by a remote controller to simulate a high-temperature environment. Using test software in the computer and a set voltage test, conduction characteristic data of the SiC vertical double-diffused transistor is obtained. This conduction characteristic data is then optimized and fitted into a temperature-dependent conduction characteristic curve. The forced-air drying oven and the sample test board are then placed in a cobalt-60 gamma ray irradiation chamber to obtain a conduction characteristic curve of the SiC power transistor under high-temperature irradiation. The transistor conduction characteristic curves obtained before and after irradiation are compared to quickly determine whether the conduction performance of the device is seriously affected. The present invention is convenient and quick to operate and has a certain degree of versatility.

[0015] The present invention discloses a method for rapidly identifying the conduction characteristics of a silicon carbide power transistor under a high-temperature irradiation environment. The method is characterized in that the device involved in the method is composed of a blast drying oven, a sample test board, an adapter, a conduction test module and a computer. The sample test board (2) is placed in the blast drying oven (1), a silicon carbide vertical double-diffused transistor sample (3) is placed on the sample test board (2), the sample test board (2) is connected to the conduction test module (4), and the conduction test module (4) is connected to the computer (5) via a USB data cable. The specific operation is performed according to the following steps:

[0016] a. Maintaining the ambient temperature in the blast drying oven (1) at 25°C, 100°C, 150°C, and 175°C, placing a silicon carbide vertical double diffused transistor sample (3) on a sample test board (2) and placing it in the blast drying oven (1) for 10 minutes, so that the die temperature and humidity are consistent with the set environment;

[0017] b. Performing parameter testing on a silicon carbide vertical double-diffused transistor sample (3) in a blast drying oven (1), connecting a sample test board (2) to a conduction test module (4) via a signal transmission line, setting a scanning voltage of the conduction test module (4), starting a conduction characteristic test, and collecting conduction characteristic data via a computer (5);

[0018] c. Setting the ambient temperature in the blast drying oven (1) in a stepwise manner with each temperature increase of 25°C, and keeping it still for 10 minutes after setting so that the temperature and humidity are consistent with the set environment;

[0019] d. placing the blast drying oven (1) in an irradiation environment, performing an irradiation test at each temperature node, maintaining a constant temperature during the irradiation process, and performing parameter tests before and after the irradiation;

[0020] e. The on-resistance data at four temperatures of 25° C., 100° C., 150° C., and 175° C. obtained in step d before irradiation are optimized and fitted into an on-resistance curve that varies with temperature;

[0021] f. The on-resistance data obtained in step d at four irradiated temperatures of 25° C., 100° C., 150° C., and 175° C. are optimized and fitted to form an on-resistance curve that varies with temperature and cumulative dose;

[0022] g. Compare the transistor on-resistance curves obtained before and after irradiation testing. By comparing and analyzing the on-resistance change trends with temperature and the on-resistance change trends with temperature and cumulative dose, the degree of damage to the conduction characteristics can be determined.

[0023] The method of the present invention for rapidly identifying the conduction characteristics of a silicon carbide power transistor under a high-temperature irradiation environment, wherein the constant temperature in the method refers to any temperature value within the temperature range in which the silicon carbide vertical double-diffused transistor sample (3) can operate normally, and after selecting the temperature, the silicon carbide vertical double-diffused transistor sample (3) is left to stand at the temperature of the sealed environment for 10 minutes, so that the device temperature of the silicon carbide vertical double-diffused transistor sample (3) is always consistent with the set temperature.

[0024] Since a large number of relationship models have been accumulated in the database, this method can quickly and accurately determine whether the threshold change is out of tolerance and whether such degradation will have a serious impact on the electrical performance of the device.

[0025] The method for rapidly identifying damage to silicon carbide power transistors under high-temperature irradiation environments described in the present invention is applicable to any silicon carbide vertical double-diffused device and can rapidly detect whether damage caused by extreme environments (temperature, radiation) will have a serious impact on the electrical performance of the device. It does not require setting different parameters according to different devices, has a certain degree of versatility, and can calculate a smooth transfer characteristic curve during detection. The present invention solves the difficulty of accurately judging abnormal electrical performance of silicon carbide vertical double-diffused transistors after being irradiated at different ambient temperatures, and provides an effective and feasible method for in-depth analysis of the radiation effects of silicon carbide vertical double-diffused transistors under extreme environments. It is suitable for use by device development units, scientific research institutes, and aerospace payload units that need to understand the electrical performance of silicon carbide vertical double-diffused transistors after irradiation. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the test system of the present invention;

[0027] Figure 2 The invention is used to quickly test the conduction characteristic curve that changes with temperature;

[0028] Figure 3 This is a quick test of the on-resistance curve that changes with temperature and cumulative dose in the present invention. DETAILED DESCRIPTION

[0029] The present invention is further described in detail below with reference to the accompanying drawings.

[0030] Example

[0031] The present invention discloses a method for rapidly identifying the conduction characteristics of a silicon carbide power transistor under a high-temperature irradiation environment. The method is characterized in that the apparatus involved in the method comprises a blast drying oven, a sample test board, an adapter, a conduction test module, and a computer. A sample test board 2 is placed in the blast drying oven 1, a silicon carbide vertical double diffused transistor sample 3 is placed on the sample test board 2, the sample test board 2 is connected to a conduction test module 4, and the conduction test module 4 is connected to a computer 5 via a USB data cable. The specific operation is performed according to the following steps:

[0032] a. Select the (C2M0080120) N-channel enhancement mode transistor produced by CREE as the silicon carbide vertical double diffused transistor sample 3. First, use C2M0080120 with a dose rate of 167rad(Si) / s and a dose point of 100krad(Si), 200krad(Si), and 500krad(Si) to O 60The silicon carbide vertical double diffused transistor sample 3 in the blast drying oven 1 is irradiated with gamma rays at ambient temperatures of 25°C, 100°C, 150°C, and 175°C, and then the irradiated silicon carbide vertical double diffused transistor sample 3 is tested.

[0033] b. Perform parameter testing on the silicon carbide vertical double diffused transistor sample 3 in the blast drying oven 1. Connect the sample test board 2 to the conduction test module 4 via a signal transmission line, set the scanning voltage of the conduction test module 4, start the conduction characteristic test, and collect the conduction characteristic data through the computer 5;

[0034] c. Set the ambient temperature in the blast drying oven 1 to increase gradually by 25°C each time, and keep it for 10 minutes after setting so that the temperature and humidity are consistent with the set environment;

[0035] d. Place the blast drying oven 1 in an irradiation environment, perform an irradiation test at each temperature node, maintain a constant temperature during the irradiation process, and perform parameter tests before and after irradiation;

[0036] e. The on-resistance data of the four temperatures before irradiation obtained in step d, 25°C, 100°C, 150°C, and 175°C, are optimized and fitted into an on-resistance curve that changes with temperature, such as Figure 2 ;

[0037] f. The on-resistance data of the four irradiated temperatures (25°C, 100°C, 150°C, and 175°C) obtained in step d are optimized and fitted to form an on-resistance curve that varies with temperature and cumulative dose, as shown in FIG. Figure 3 ;

[0038] g. Compare the transistor on-resistance curves obtained before and after irradiation testing. By comparing and analyzing the on-resistance change trends with temperature and the on-resistance change trends with temperature and cumulative dose, the degree of damage to the conduction characteristics can be determined.

Claims

1. A method for rapidly identifying the conduction characteristics of a silicon carbide power transistor under high-temperature radiation environment, characterized in that: The device involved in the method is composed of a blast drying oven, a sample test board, an adapter, a conduction test module and a computer. The sample test board (2) is placed in the blast drying oven (1), a silicon carbide vertical double diffused transistor sample (3) is placed on the sample test board (2), the sample test board (2) is connected to the conduction test module (4), and the conduction test module (4) is connected to the computer (5) via a USB data cable. The specific operation is carried out according to the following steps: a. Maintaining the ambient temperature in the blast drying oven (1) at 25°C, 100°C, 150°C, and 175°C, placing a silicon carbide vertical double diffused transistor sample (3) on a sample test board (2) and placing it in the blast drying oven (1) for 10 minutes, so that the die temperature and humidity are consistent with the set environment; b. Performing parameter testing on a silicon carbide vertical double-diffused transistor sample (3) in a blast drying oven (1), connecting a sample test board (2) to a conduction test module (4) via a signal transmission line, setting a scanning voltage of the conduction test module (4), starting a conduction characteristic test, and collecting conduction characteristic data via a computer (5); c. The ambient temperature in the blast drying oven (1) is set to increase in steps, with each increase being 25°C, and the temperature is kept still for 10 minutes after setting, so that the temperature and humidity are consistent with the set environment; d. Place the blast drying oven (1) in an irradiation environment, conduct irradiation tests at each temperature node, maintain a constant temperature during the irradiation process, and conduct parameter tests before and after irradiation; e. The on-resistance data at four temperatures of 25° C., 100° C., 150° C., and 175° C. obtained in step d before irradiation are optimized and fitted into an on-resistance curve that varies with temperature; f. The on-resistance data at four irradiated temperatures (25° C., 100° C., 150° C., and 175° C.) obtained in step d are optimized and fitted to form an on-resistance curve that varies with temperature and cumulative dose; g. Compare the transistor on-resistance curves obtained before and after irradiation testing. By comparing and analyzing the on-resistance change trends with temperature and the on-resistance change trends with temperature and cumulative dose, the degree of damage to the conduction characteristics can be determined.

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