Cleaning method and plasma treatment method

Abstract

The cleaning method according to the present disclosure includes a first cleaning process including the steps of supplying a first processing gas into a chamber, and generating a first plasma from the first processing gas in a space defined by a placement region and an electrode to clean a region including the placement region in a placement table, and a second cleaning process including the steps of holding a dummy substrate in a facing manner with the placement region at a prescribed position at a prescribed distance from the placement region, supplying a second processing gas into the chamber, and generating a second plasma from the second processing gas in a space defined by the dummy substrate held at the prescribed position and the electrode to clean a region including a surrounding of the placement region in the placement table.

Description

Technical Field

[0001] The exemplary embodiments of this disclosure relate to a cleaning method and a plasma treatment method. Background Technology

[0002] As a technique for removing deposits attached to the outer periphery of an electrostatic holding disk used to hold a substrate disposed in the chamber of a substrate processing apparatus, there is a cleaning method described in Patent Document 1.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-054825 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a technique for cleaning a stage in a plasma processing apparatus.

[0008] Solution for solving the problem

[0009] According to an exemplary embodiment of this disclosure, a cleaning method in a plasma processing apparatus is provided. The plasma processing apparatus includes: a chamber; a stage disposed within the chamber, the stage having a mounting region for mounting a substrate; and electrodes disposed facing the mounting region. The cleaning method includes a first cleaning step and a second cleaning step. The first cleaning step includes the steps of: supplying a first processing gas into the chamber; and generating a first plasma from the first processing gas in a space defined by the mounting region and the electrodes to clean a region in the stage including the mounting region. The second cleaning step includes the steps of: holding a substrate dummy at a predetermined position at a predetermined distance from the mounting region, facing the mounting region; supplying a second processing gas into the chamber; and generating a second plasma from the second processing gas in a space defined by the substrate dummy held at the predetermined position and the electrodes to clean a region in the stage surrounding the mounting region.

[0010] According to an exemplary embodiment of the present disclosure, a cleaning method in a plasma processing apparatus is provided. The plasma processing apparatus includes: a chamber; a stage disposed within the chamber, the stage having a mounting region for mounting a substrate; and electrodes disposed facing the mounting region. The cleaning method includes the steps of: moving a substrate dummy into the chamber; holding the substrate dummy at a predetermined position at a predetermined distance from the mounting region, facing the mounting region; supplying a processing gas into the chamber; and generating plasma from the processing gas within a space defined by the substrate dummy held at the predetermined position and the electrodes to clean an area in the stage including the area surrounding the mounting region.

[0011] According to an exemplary embodiment of this disclosure, a plasma processing method in a plasma processing apparatus is provided. The plasma processing apparatus includes: a chamber; a stage disposed within the chamber, the stage having a mounting region for mounting a substrate; and electrodes disposed facing the mounting region. The processing method includes an etching step and a cleaning step. The etching step includes the following steps: preparing a patterned substrate having an etchable layer and a mask layer with a predetermined pattern formed on the etchable layer; placing the patterned substrate in the mounting region of the stage; supplying an etching gas into the chamber; and supplying high-frequency power to the stage or the electrodes, thereby cleaning the patterned substrate and the electrodes. In a defined space, plasma is generated from the etching gas to etch the patterned substrate; and the patterned substrate is removed from the chamber. The cleaning process includes the following steps: introducing a substrate dummy different from the patterned substrate into the chamber; holding the substrate dummy at a predetermined position at a predetermined distance from the placement area, facing the placement area; supplying processing gas into the chamber; and cleaning the area surrounding the placement area in the stage, including the placement area, by generating plasma from the processing gas in the space defined by the substrate dummy held at the predetermined position and the electrode.

[0012] The effects of the invention

[0013] According to an exemplary embodiment of this disclosure, a technique for cleaning a stage in a plasma processing apparatus can be provided. Attached Figure Description

[0014] Figure 1 This is a schematic cross-sectional view showing the structure of a plasma processing apparatus 10 according to one embodiment.

[0015] Figure 2This is a diagram that schematically illustrates a substrate processing system PS according to an exemplary embodiment.

[0016] Figure 3 This is a flowchart illustrating a plasma processing method according to one embodiment.

[0017] Figure 4 This is a cross-sectional view showing an example of a patterned substrate PW being etched in process ST1.

[0018] Figure 5 This is a schematic diagram showing the interior of chamber 1 in process ST2.

[0019] Figure 6 This is a schematic diagram showing the interior of chamber 1 in process ST5.

[0020] Figure 7 This is a schematic diagram showing the interior of chamber 1 in process ST6.

[0021] Figure 8 The graph is a curve obtained by marking the in-plane position of the substrate dummy DW and the etching rate of the photoresist layer in each embodiment. Detailed Implementation

[0022] The various embodiments of this disclosure will now be described.

[0023] One exemplary implementation provides a cleaning method.

[0024] The cleaning method is a cleaning method in a plasma processing apparatus, which includes: a chamber; a stage disposed in the chamber, the stage having a mounting area for mounting a substrate; and electrodes disposed facing the mounting area. The cleaning method includes a first cleaning step and a second cleaning step. The first cleaning step includes the steps of: supplying a first processing gas into the chamber; and generating a first plasma from the first processing gas in a space defined by the mounting area and the electrodes to clean the area in the stage including the mounting area. The second cleaning step includes the steps of: holding a substrate dummy at a predetermined position at a predetermined distance from the mounting area, facing the mounting area; supplying a second processing gas into the chamber; and generating a second plasma from the second processing gas in a space defined by the substrate dummy held at the predetermined position and the electrodes to clean the area in the stage surrounding the mounting area.

[0025] In one exemplary embodiment, the first processing gas comprises an oxygen-containing gas.

[0026] In one exemplary embodiment, the oxygen-containing gas is O2 gas.

[0027] In one exemplary embodiment, the second processing gas comprises a fluorine-containing gas.

[0028] In one exemplary embodiment, the fluorine-containing gas comprises NF3 gas.

[0029] In one exemplary embodiment, the fluorine-containing gas includes C x F y (x and y are positive integers) gas.

[0030] In one exemplary embodiment, the second processing gas comprises O2 gas.

[0031] In one exemplary embodiment, a modification step is further included, performed between the first cleaning step and the second cleaning step, the modification step comprising: supplying a third processing gas into the chamber; and generating a third plasma from the third processing gas in the space defined by the placement area and the electrode to modify the area in the placement stage including the placement area.

[0032] In one exemplary embodiment, the third processing gas is nitrogen, and the region in the stage including the placement area is nitrided by a third plasma generated from the nitrogen.

[0033] In one exemplary embodiment, a substrate dummy cleaning step is further included, which includes the steps of: moving a substrate dummy into a chamber; placing the substrate dummy in a placement area; and generating a fourth plasma from a fourth process gas to clean the substrate dummy in a space defined by the substrate dummy placed in the placement area and the electrode, wherein the second cleaning step is performed after the substrate dummy cleaning step.

[0034] In one exemplary embodiment, the third processing gas comprises a fluorine-containing gas.

[0035] In one exemplary embodiment, the fluorine-containing gas comprises NF3 gas.

[0036] In one exemplary embodiment, the fluorine-containing gas includes C x F y (x and y are positive integers) gas.

[0037] In one exemplary embodiment, the third processing gas comprises O2 gas.

[0038] In one exemplary embodiment, the substrate dummy processing step includes the following steps: supplying a high frequency having a first frequency and a high frequency having a second frequency to a stage or electrode to generate a fourth plasma.

[0039] In one exemplary embodiment, the process of holding the substrate dummy includes the following steps: moving the substrate dummy placed in the placement area to a predetermined position.

[0040] In one exemplary embodiment, in the process of moving the substrate dummy sheet in, the substrate dummy sheet is moved from the substrate storage section into the chamber. In the process of holding the substrate dummy sheet in, the substrate dummy sheet moved from the substrate storage section into the chamber is held in a predetermined position. The second cleaning process also includes a process of moving the substrate dummy sheet out of the chamber into the substrate storage section after a process of cleaning the area around the placement area in the placement stage.

[0041] In one exemplary embodiment, the specified distance is the distance at which no plasma is generated in the space defined by the substrate dummy held in the specified position and the mounting area.

[0042] In one exemplary embodiment, the specified distance is 0.01 mm or more and 1 mm or less from the placement area.

[0043] In one exemplary embodiment, the time for generating the second plasma in the second cleaning step is more than 10 seconds and less than 100 seconds.

[0044] In one exemplary embodiment, the electrode has a plurality of gas flow holes, and in the process of supplying a second processing gas into the chamber, the second processing gas is supplied into the chamber through the gas flow holes.

[0045] In one exemplary embodiment, the second plasma has a W / cm² content of 0.1 W / cm². 2 Above and 10W / cm 2 The following energy densities.

[0046] In one exemplary embodiment, the energy density of the second plasma is higher than that of the first plasma.

[0047] In one exemplary embodiment, the first cleaning step includes the step of supplying a high frequency having a first power to the stage or electrode to generate a first plasma, and the second cleaning step includes the step of supplying a high frequency having a second power higher than the first power to the stage or electrode to generate a second plasma.

[0048] In one exemplary embodiment, the second power is 50W or more and 10,000W or less.

[0049] In one exemplary embodiment, a cleaning method is described in a plasma processing apparatus comprising: a chamber; a stage disposed within the chamber having a mounting area for mounting a substrate; and electrodes disposed facing the mounting area. The cleaning method includes the steps of: moving a substrate dummy into the chamber; holding the substrate dummy at a predetermined position at a predetermined distance from the mounting area, facing the mounting area; supplying a processing gas into the chamber; and generating plasma from the processing gas within a space defined by the substrate dummy held at the predetermined position and the electrodes to clean an area in the mounting stage including the area surrounding the mounting area.

[0050] In one exemplary embodiment, a plasma processing method is described in a plasma processing apparatus. The plasma processing apparatus includes: a chamber; a stage disposed within the chamber, the stage having a mounting area for mounting a substrate; and electrodes disposed facing the mounting area. The processing method includes an etching step and a cleaning step. The etching step includes the following steps: preparing a patterned substrate having an etchable layer and a mask layer with a predetermined pattern formed on the etchable layer; placing the patterned substrate in the mounting area of ​​the stage; supplying etching gas into the chamber; and supplying etching gas to the stage or... Electrodes supply high-frequency power, and plasma is generated from etching gas to etch the patterned substrate within the space defined by the patterned substrate and the electrodes; and the patterned substrate is removed from the chamber. The cleaning process includes the following steps: introducing a substrate dummy different from the patterned substrate into the chamber; holding the substrate dummy at a predetermined position at a predetermined distance from the placement area in a manner facing the placement area; supplying processing gas into the chamber; and generating plasma from the processing gas within the space defined by the substrate dummy held at the predetermined position and the electrodes to clean the area surrounding the placement area in the stage.

[0051] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Furthermore, identical or identical elements will be labeled with the same reference numerals in the drawings, and repeated descriptions will be omitted. Unless otherwise stated, positional relationships such as up, down, left, and right will be described based on the positional relationships shown in the drawings. The scale of the drawings does not show actual scales, and actual scales are not limited to those shown in the drawings.

[0052] <Structure of Plasma Processing Device>

[0053] Figure 1This is a schematic cross-sectional view showing the structure of a plasma processing apparatus 10 according to one embodiment. The plasma processing apparatus 10 has a chamber 1 that is hermetically sealed and set to an electrical ground potential. The chamber 1 defines a processing space for generating plasma. A mounting stage 2 for supporting a substrate W is provided inside the chamber 1. The mounting stage 2 is configured to include a substrate (base) 2a and an electrostatic chuck 6. The substrate 2a is made of a conductive metal, such as aluminum, and functions as a lower electrode. The electrostatic chuck 6 functions for electrostatically adsorbing the substrate W. The electrostatic chuck 6 is disposed on the upper surface of the substrate 2a. The mounting stage 2 is supported by a support stage 4. The support stage 4 is supported by a support member 3, such as quartz.

[0054] A focusing ring 5, for example, formed of single-crystal silicon, is provided on the outer periphery above the mounting stage 2. Specifically, the focusing ring 5 has an annular shape and is arranged on the upper surface of the substrate 2a in such a way that it surrounds the outer periphery of the mounting surface (the upper surface of the electrostatic holding disk 6) of the substrate W on the mounting stage 2. Furthermore, a cylindrical inner wall member 3a, for example made of quartz, is provided in the chamber 1 in such a way that it surrounds the mounting stage 2 and the support stage 4.

[0055] The substrate 2a is connected to the first RF power supply 10a via a first matching connector 11a. It is also connected to the second RF power supply 10b via a second matching connector 11b. The first RF power supply 10a is a power source for generating plasma. This first RF power supply 10a is configured to supply high-frequency power of a predetermined frequency to the substrate 2a of the stage 2. The second RF power supply 10b is a power source for attracting ions (for biasing). This second RF power supply 10b is configured to supply high-frequency power of a predetermined frequency lower than the high-frequency power supplied by the first RF power supply 10a to the substrate 2a of the stage 2. Thus, the stage 2 is configured to be able to be energized. On the other hand, a spray head 16 is provided above the stage 2, parallel to and facing it. The spray head 16 functions as an upper electrode. The spray head 16 and the stage 2 function as a pair of electrodes (upper electrode and lower electrode).

[0056] The electrostatic holding disk 6 is configured such that its upper surface serves as a mounting surface 6e for placing the substrate. The mounting surface 6e has a flat, disc-shaped structure. The electrostatic holding disk 6 is configured to have an insulator 6b and an electrode 6a disposed inside the insulator 6b. The electrode 6a is connected to a DC power supply 12. Furthermore, it is configured such that by applying a DC voltage from the DC power supply 12 to the electrode 6a, the substrate W is attracted to the mounting surface 6e by Coulomb force.

[0057] Furthermore, in this embodiment, as an example, the mounting surface 6e and the substrate W have circular shapes, and the diameter of the mounting surface 6e is smaller than the diameter of the substrate W.

[0058] A temperature-regulating medium flow path 2d is provided inside the mounting stage 2. An inlet pipe 2b and an outlet pipe 2c are connected to the temperature-regulating medium flow path 2d. Furthermore, by circulating a suitable temperature-regulating medium, such as cooling water, in the temperature-regulating medium flow path 2d, the temperature of the mounting stage 2 can be controlled. Additionally, a gas supply pipe 30 is provided on the mounting stage 2 for supplying a heat transfer gas (back-side gas), such as helium, to the back side of the substrate W. The gas supply pipe 30 is connected to a gas supply source (not shown). With these structures, the substrate W, held on the mounting surface 6e by the electrostatic holding plate 6, can be controlled at a predetermined temperature.

[0059] The mounting platform 2 is provided with multiple, for example, three, pin-through holes 200 (in... Figure 1 (Only one is shown in the image.) Lifting mechanisms 61 are respectively provided inside these pin-through holes 200. The lifting mechanisms 61 are connected to actuators 62. The actuators 62 can raise or lower the lifting mechanisms 61, causing them to protrude from the mounting surface 6e. When the lifting mechanism 61 is raised while the substrate W is placed on the mounting surface 6e, the front end of the lifting mechanism 61 protrudes from the mounting surface 6e of the electrostatic holding disk 6, holding the substrate W at a predetermined distance from the mounting surface 6e of the electrostatic holding disk 6. On the other hand, when the lifting mechanism 61 is lowered, the front end of the lifting mechanism 61 is received within the pin-through hole 200, and the substrate W is placed on the mounting surface 6e of the electrostatic holding disk 6. In this way, the actuators 62 can control the position of the substrate W relative to the mounting surface 6e of the electrostatic holding disk 6 (position in the direction perpendicular to the mounting surface 6e) via the lifting mechanism 61.

[0060] A spray head 16 is disposed in chamber 1. The spray head 16 has a main body 16a and an upper top plate 16b that functions as an electrode plate. The spray head 16 is supported on the upper part of chamber 1 by an insulating member 95. The main body 16a is made of a conductive material, such as aluminum with an anodized surface. The main body 16a is configured such that the upper top plate 16b can be detachably supported on the lower part of the main body 16a. One end of a gas supply pipe 15a is connected to a gas inlet 16g. The other end of the gas supply pipe 15a is connected to a gas supply source (gas supply unit) 15 for supplying processing gas. A mass flow controller (MFC) 15b and an on / off valve V2 are sequentially disposed on the gas supply pipe 15a from the upstream side. Processing gas for plasma etching is supplied from the gas supply source 15 to the gas diffusion chamber 16c via the gas supply pipe 15a. The processing gas is dispersed from the gas diffusion chamber 16c and supplied to the chamber 1 in a spray pattern through the gas flow hole 16d and the gas inlet hole 16e.

[0061] The spray head 16 is electrically connected to the variable DC power supply 72 via a low-pass filter (LPF) 71. This variable DC power supply 72 is configured to be switched on and off via an on / off switch 73. The current / voltage of the variable DC power supply 72 and the on / off state of the on / off switch 73 are controlled by the control unit 100, described later. Furthermore, as described later, when applying high frequencies from the first RF power supply 10a and the second RF power supply 10b to the stage 2 to generate plasma in the processing space, the on / off switch 73 is switched on as needed via the control unit 100. This applies a predetermined DC voltage to the spray head 16, which serves as the upper electrode.

[0062] A cylindrical grounding conductor 1a is provided, extending from the side wall of chamber 1 to a position above the height of the spray head 16. The cylindrical grounding conductor 1a has a top wall at its upper part.

[0063] An exhaust port 81 is provided at the bottom of chamber 1. The exhaust port 81 is connected to a first exhaust device 83 via an exhaust pipe 82. The first exhaust device 83 has a vacuum pump, which can reduce the pressure inside chamber 1 and set it to a predetermined pressure by operating the vacuum pump. On the other hand, a loading and unloading outlet 84 for substrate W is provided on the side wall inside chamber 1, and a gate valve 85 for opening and closing the loading and unloading outlet 84 is provided thereon.

[0064] A deposition shield 86 is provided along the inner wall surface of the side inner portion of chamber 1. The deposition shield 86 is used to prevent etching byproducts (deposits) from adhering to chamber 1. A conductive member (GND block) 89 is provided at a position approximately at the same height as the substrate W of the deposition shield 86, connected in a manner that allows control over the potential relative to ground, thereby preventing abnormal discharge. In addition, a deposition shield 87 is provided around the inner wall member 3a, facing the lower end of the deposition shield 86. Deposition shields 86 and 87 are removable.

[0065] The plasma processing apparatus 10 with the above-described structure is controlled by a control unit 100. The control unit 100 is equipped with a process controller 101 that has a CPU and controls the various parts of the plasma processing apparatus 10, a user interface 102, and a storage unit 103.

[0066] The user interface 102 consists of a keyboard for process managers to input commands to manage the plasma processing device 10, a display that visually shows the operating status of the plasma processing device 10, and the like.

[0067] The storage unit 103 stores control programs (software) for implementing various processes performed by the plasma processing apparatus 10 under the control of the process controller 101, as well as process flow data, etc. Furthermore, as needed, any process flow can be retrieved from the storage unit 103 via instructions from the user interface 102, and the process controller 101 can execute that arbitrary process flow, thereby performing the desired processing by the plasma processing apparatus 10 under the control of the process controller 101. In addition, the control programs, processing condition data, and other process flow data can also be used while stored on a computer-readable storage medium (e.g., hard disk, CD, floppy disk, semiconductor memory, etc.). Furthermore, the control programs, processing condition data, and other process flow data can be transmitted from other devices, for example, via dedicated lines, and used online at any time.

[0068] <Structure of the PS substrate processing system>

[0069] Figure 2 This diagram schematically illustrates a substrate processing system PS according to an exemplary embodiment. The substrate processing system PS includes substrate processing chambers PM1 to PM6 (hereinafter, also collectively referred to as "substrate processing modules PM"), a transport module TM, loading interlock modules LLM1 and LLM2 (hereinafter, also collectively referred to as "loading interlock modules LLM"), a loading module LM, and loading ports LP1 to LP3 (hereinafter, also collectively referred to as "loading ports LP"). A control unit CT controls each structure of the substrate processing system PS to perform prescribed processing on the substrate W.

[0070] The substrate processing module PM performs etching, cutting, film formation, annealing, doping, photolithography, cleaning, and ashing processes on the substrate W. A portion of the substrate processing module PM may be a measurement module, capable of measuring the thickness of layers formed on the substrate W, the dimensions of patterns formed on the substrate W, and so on. Figure 1 The plasma processing device 10 shown is an example of a substrate processing module PM.

[0071] The transfer module TM has a transfer device for transferring substrate W. The transfer module TM transfers substrate W between substrate processing modules PM or between substrate processing module PM and load interlock module LLM. The substrate processing module PM and load interlock module LLM are arranged adjacent to the transfer module TM. The transfer module TM is spatially isolated from or connected to the substrate processing module PM and load interlock module LLM by an openable and closable gate valve.

[0072] Loading interlock modules LLM1 and LLM2 are located between the transfer module TM and the loading module LM. The loading interlock module LLM can switch its internal pressure between atmospheric pressure and vacuum. The loading interlock module LLM transfers substrate W from the loading module LM (at atmospheric pressure) to the transfer module TM (vacuum), and also transfers substrate W from the transfer module TM (vacuum) to the loading module LM (at atmospheric pressure).

[0073] The loading module LM has a conveying device for transporting substrates W, and the loading module LM transports substrates W between the loading interlock module LLM and the loading port LP. The loading port LP can hold a FOUP (Front Opening Unified Pod) capable of holding, for example, 25 substrates W, or an empty FOUP. The loading module LM removes substrates W from the FOUP in the loading port LP and transports them to the loading interlock module LLM. Alternatively, the loading module LM removes substrates W from the loading interlock module LLM and transports them to the FOUP in the loading port LP. At least one of the multiple loading ports LP may have a FOUP for storing substrate dummy wafers.

[0074] The control unit CT controls each structure of the substrate processing system PS to perform prescribed processing on the substrate W. The control unit CT stores a process flow that sets the process parameters, process conditions, transport conditions, etc., and controls each structure of the substrate processing system PS according to this process flow to perform the prescribed processing on the substrate W. The control unit CT can also function as… Figure 1 The control unit 100 of the plasma processing apparatus 10 shown may have some or all of its functions.

[0075] Plasma Processing

[0076] Figure 3 This is a flowchart illustrating a plasma processing method according to one embodiment. Figure 3 The processes shown in each step are mainly achieved by the plasma processing device 10 operating under the control of the control unit 100. Figure 3 The plasma processing method shown includes a process of etching the patterned substrate PW (ST1), a first cleaning process of cleaning the stage 2 (ST2), a process of modifying the mounting surface 6e of the electrostatic holding disk 6 (ST3), a process of transferring the substrate dummy DW (ST4), a process of cleaning the substrate dummy DW (ST5), and a second cleaning process of cleaning the stage 2 (ST6).

[0077] Furthermore, in the plasma processing method according to this embodiment, Figure 3 Not all of the steps shown are necessary. That is, they can be... Figure 3 A portion of the illustrated process is omitted. Additionally, the execution method can be changed. Figure 3 The sequence of processes is shown below. Refer to the figures for further details. Figure 3 An example of the processing in each of the shown steps will be explained.

[0078] Figure 4 This is a cross-sectional view showing an example of a patterned substrate PW being etched in process ST1. The patterned substrate PW has a structure formed by stacking a base layer UF, an etched film EF, and a mask film MK. The base film UF can be, for example, a silicon wafer, an organic layer, a dielectric layer, a metal layer, a semiconductor layer, etc., formed on the silicon wafer (including both the case where it is formed on the surface of the silicon wafer and the case where it is formed on the surface of other films formed on the silicon wafer). The base layer UF can be constructed by stacking multiple layers. The etched layer EF can be, for example, an organic layer or a dielectric layer. The organic layer can be, for example, a spin-coated carbon layer (SOC), a photoresist layer, or amorphous carbon. The dielectric layer can be, for example, a silicon oxide layer, a silicon nitride layer, Si-ARC, or SiON.

[0079] The mask layer MK, such as a photoresist, functions as a mask during the etching of the etched layer EF. The mask layer MK is formed having at least one sidewall. This sidewall defines at least one recess OP in the etched layer EF. The recess OP is a space in the etched layer EF, surrounded by the sidewall. That is, in Figure 4 In the process, the etched layer EF has an area covered by the mask layer MK and an area exposed at the bottom of the recess OP.

[0080] In process ST1, firstly, a patterned substrate PW is transported into the chamber 1 of the plasma processing apparatus 10. The patterned substrate PW is then placed on the mounting surface 6e of the mounting stage 2 via a lift 61. Next, after a predetermined processing gas is supplied into the chamber 1, high-frequency power is supplied to the mounting stage 2, which serves as the lower electrode. This generates plasma from the processing gas in the space between the patterned substrate PW and the spray head 16, which functions as the upper electrode. Then, by attracting active species from this plasma to the patterned substrate PW, the portion of the etched layer EF exposed in the recess OP of the mask layer MK is etched. When the etching of the patterned substrate PW is complete, it is removed from the chamber 1. Furthermore, during the etching of the etched layer EF, etching byproducts may be generated. These byproducts may, for example, adhere to or deposit around the mounting surface 6e of the electrostatic holding disk 6.

[0081] Figure 5 This is a schematic diagram showing the interior of chamber 1 in process ST2. (See diagram below.) Figure 5 As shown, in process ST2, at least a portion of the electrostatic holding disk 6 is cleaned.

[0082] That is, firstly, with the substrate not placed on the mounting stage 2 (i.e., with the mounting surface 6e exposed relative to the spray head 16), a predetermined processing gas is supplied into the chamber 1. At this time, the pressure inside the chamber 1 is reduced to a predetermined pressure. This processing gas can be appropriately selected based on the byproducts generated in the etching process (ST1) of the patterned substrate PW. For example, if the byproduct is a CF-based polymer, the processing gas can be O2 gas. Furthermore, the processing gas is not limited to O2 gas, and can be other oxygen-containing gases such as CO gas, CO2 gas, and O3 gas. Additionally, if the byproducts include silicon or metal in addition to the CF-based polymer, a halogen-containing gas can be added to the oxygen-containing gas as the processing gas. Examples of halogen-containing gases include fluorine-based gases such as CF4 gas and NF3 gas. Other examples of halogen-containing gases include chlorine-based gases such as Cl2 gas and bromine-based gases such as HBr gas.

[0083] Next, high-frequency power is supplied to the mounting stage 2, which functions as the lower electrode. The control unit 100 supplies high-frequency power to the substrate 2a of the mounting stage 2 by controlling the first RF power supply 10a to generate high-frequency power. As a result, plasma is generated from the processing gas supplied to the chamber 1 within the space defined by the mounting surface 6e of the electrostatic holding disk 6 and the spray head 16, which functions as the upper electrode. Furthermore, the frequency of the high-frequency power generated by the first RF power supply 10a can be, for example, 10MHz or more and 100MHz or less, or 40MHz or more and 100MHz or less. In addition, the high-frequency power can be, for example, 50W or more and 10,000W or less, 100W or more and 7,000W or less, or 200W or more and 2,000W or less.

[0084] When plasma is generated in the space defined by the mounting surface 6e and the spray head 16, at least a portion of the electrostatic holding disk 6 is cleaned by the plasma. This cleaning, for example, can remove byproducts that adhere to or deposit on the shoulder 6c of the electrostatic holding disk 6 during the etching process (ST1) of the patterned substrate PW. Alternatively, the cleaning can be a partial removal of the byproducts, or a complete removal of the byproducts. Furthermore, byproducts adhering to or deposited on the inner wall of the chamber 1 can be removed by plasma generated in the space defined by the mounting surface 6e and the spray head 16.

[0085] Next, in step ST3, the mounting surface 6e of the electrostatic holding disk 6 is modified. In step ST3, firstly, with the substrate not placed on the mounting stage 2, a predetermined processing gas is supplied into the chamber 1. At this time, the pressure inside the chamber 1 is reduced to a predetermined pressure. This processing gas can be, for example, an inactive gas. In this embodiment, the processing gas is N2 gas.

[0086] High-frequency power is supplied to the mounting stage 2, which functions as the lower electrode. The control unit 100 supplies high-frequency power to the substrate 2a of the mounting stage 2 by controlling the first RF power supply 10a to generate high-frequency power. As a result, plasma is generated from the processing gas supplied to the chamber 1 within the space defined by the mounting surface 6e of the electrostatic holding disk 6 and the spray head 16, which functions as the upper electrode. Furthermore, the frequency of the high-frequency power generated by the first RF power supply 10a can be, for example, 10MHz or more and 100MHz or less, or 40MHz or more and 100MHz or less. In addition, the high-frequency power can be, for example, 50W or more and 10,000W or less, 100W or more and 7,000W or less, or 200W or more and 2,000W or less.

[0087] When plasma is generated in the space defined by the mounting surface 6e and the spray head 16, at least a portion of the surface of the electrostatic holding disk 6 is modified by the plasma. In this embodiment, the plasma is generated from N2 gas, and the mounting surface 6e of the electrostatic holding disk 6 is nitrided by the plasma. As a result, fluorine adhering to the mounting surface 6e is removed.

[0088] Next, in process ST4, a substrate dummy die DW is loaded into chamber 1. The substrate dummy die DW is, for example, a silicon substrate, a substrate whose surface does not have a patterned layer. The substrate dummy die DW can be loaded, for example, from the loading port LP (see reference LP). Figure 2 The FOUP (a storage unit example) is moved out and into chamber 1. Additionally, the substrate dummy DW moved from loading port LP can be the substrate dummy DW used in step ST6 described later. That is, the substrate dummy DW moved into chamber 1 in step ST4 can be the substrate dummy DW used in step ST6 of the previous cycle and then moved out to loading port LP.

[0089] Figure 6 This is a schematic diagram showing the interior of chamber 1 in process ST5. (See diagram below.) Figure 6 As shown, in process ST5, the substrate dummy die DW is cleaned. Process ST5 includes a process of placing the substrate dummy die DW on the mounting surface 6e (ST51) and a process of cleaning the substrate dummy die DW (ST52).

[0090] First, in process ST51, the substrate dummy DW, which was moved into chamber 1 in process 4, is placed on the mounting surface 6e. Specifically, the substrate dummy DW is placed at the front end of the elevator 61 with the elevator 61 protruding from the mounting surface 6e. Then, the elevator 61 descends, placing the substrate dummy DW on the mounting surface 6e. Then, when a predetermined voltage is applied to the electrode 6a of the electrostatic holding disk 6, the substrate dummy DW is electrostatically attracted to the mounting surface 6e.

[0091] Next, in process ST52, the substrate dummy DW is cleaned. First, with the substrate dummy DW placed on the mounting surface 6e, a predetermined processing gas is supplied to the chamber 1. At this time, the pressure in the chamber 1 is reduced to a predetermined pressure. This predetermined pressure can be lower than the pressure in process ST2 and / or the pressure in process ST3. The processing gas can be appropriately selected based on the byproducts generated and attached to or deposited on the shoulder 6c of the electrostatic holding pad 6 in the etching process (ST1) of the patterned substrate PW. For example, if the byproduct is a CF-based polymer, it can be a fluorine-containing gas such as NF3 or CF4. In addition, the processing gas can contain O2 gas. Furthermore, the processing gas is not limited to O2 gas, and can also be other oxygen-containing gases such as CO, CO2, and O3. In addition, if the byproducts include silicon or metal in addition to the CF-based polymer, a halogen-containing gas can be added as the processing gas, for example. In addition, the halogen-containing gas can be a chlorine-based gas such as Cl2 gas or a bromine-based gas such as HBr gas. In addition, the processing gas may also contain inactive gases such as Ar gas.

[0092] Next, high-frequency power is supplied to the mounting stage 2, which serves as the lower electrode. The control unit 100 generates high-frequency power by controlling the first RF power supply 10a and the second RF power supply 10b, thereby supplying the first high-frequency power and the second high-frequency power to the substrate 2a of the mounting stage 2. As a result, plasma is generated from the processing gas supplied to the chamber 1 within the space defined by the substrate dummy DW placed on the mounting surface 6e and the spray head 16, which functions as the upper electrode. Furthermore, the frequency of the high-frequency power generated by the first RF power supply 10a can be, for example, 10MHz or more and 100MHz or less, or 40MHz or more and 100MHz or less. In addition, the high-frequency power can be, for example, 50W or more and 10,000W or less, or 100W or more and 7,000W or less, or 500W or more and 7,000W or less. In addition, the frequency of the high-frequency power generated by the second RF power supply 10b can be, for example, 100kHz or more and 50MHz or less, or 400kHz or more and 13.56MHz or less. In addition, the high-frequency power can be, for example, above 0W and below 25,000W, above 100W and below 25,000W, or above 500W and below 5,000W.

[0093] When plasma is generated in the space defined by the substrate dummy DW placed on the mounting surface 6e and the spray head 16, the substrate dummy DW is cleaned by the plasma. This cleaning can remove byproducts that adhered to the substrate dummy DW from the shoulder 6c of the electrostatic holding disk 6 in the previous cycle of process ST6.

[0094] Figure 7 This is a schematic diagram showing the interior of chamber 1 in process ST6. (See diagram below.) Figure 7 As shown, in process ST6, the substrate dummy DW is held at a distance d from the mounting surface 6e, and at least a portion of the mounting stage 2 is cleaned. Process ST6 includes a process of raising the substrate dummy DW (ST61), a process of cleaning the mounting stage 2 (ST62), and a process of removing the substrate dummy DW (ST63).

[0095] First, in process ST61, the substrate dummy wafer DW is raised by the elevator 61. Specifically, as follows... Figure 7 As shown, the elevator 61 is moved toward the spray head 16 such that its front end protrudes from the mounting surface 6e. This lifts the substrate dummy DW from the mounting surface 6e, holding it at a predetermined distance d from the mounting surface 6e. The substrate dummy DW can be held parallel to the mounting surface 6e.

[0096] The distance d between the substrate dummy DW and the mounting surface 6e can, for example, be a distance at which no plasma is generated between the substrate dummy DW and the mounting surface 6e during the cleaning process (ST62) of the mounting stage 2 described later. In this case, such as Figure 7 As shown, the plasma P generated in the space defined by the substrate dummy DW and the spray head 16 can diffuse between the substrate dummy DW and the electrostatic holding disk 6 (including the mounting surface 6e and / or the shoulder 6c). Furthermore, the distance d can be, for example, 0.01 mm or more and 1 mm or less. Alternatively, the distance d can be 0.2 mm or more and 0.7 mm or less. By maintaining the distance d between the substrate dW and the electrostatic holding disk 6 at these distances, such as... Figure 7 As shown, it is possible to suppress damage to the mounting surface 6e due to plasma, and to remove byproducts attached to or deposited on the shoulder 6c by plasma P diffused between the substrate dummy DW and the electrostatic holding disk 6.

[0097] Next, in step ST62, at least a portion of the mounting stage 2 is cleaned. First, with the substrate dummy DW held at a predetermined distance d from the mounting surface 6e, a predetermined processing gas is supplied to the chamber 1. At this time, the pressure inside the chamber 1 is reduced to a predetermined pressure. This predetermined pressure may be higher than the pressure in step ST2 and / or the pressure in step ST3. The processing gas may be appropriately selected based on the byproducts generated and attached to or deposited on the shoulder 6c of the electrostatic holding pad 6 during the etching step (ST1) of the patterned substrate PW. For example, if the byproduct is a CF-based polymer, it may be a fluorine-containing gas such as NF3 or CF4. In addition, the processing gas may contain O2 gas. Furthermore, the processing gas is not limited to O2 gas, and may also be other oxygen-containing gases such as CO, CO2, or O3. In addition, if the byproducts include silicon or metal in addition to the CF-based polymer, a halogen-containing gas may be added as the processing gas, for example. In addition, halogen-containing gases can be chlorine-based gases such as Cl2 gas, bromine-based gases such as HBr gas, etc.

[0098] Next, high-frequency power is supplied to the mounting stage 2, which serves as the lower electrode. The control unit 100 supplies high-frequency power to the substrate 2a of the mounting stage 2 by controlling the first RF power supply 10a to generate high-frequency power. As a result, plasma is generated from the processing gas supplied to the chamber 1 within the space defined by the substrate dummy DW mounted on the mounting surface 6e and the spray head 16, which functions as the upper electrode. Furthermore, the frequency of the high-frequency power generated by the first RF power supply 10a can be, for example, 10MHz or more and 100MHz or less, or 40MHz or more and 100MHz or less. The high-frequency power in process ST62 can be, for example, 50W or more and 10,000W or less, or 100W or more and 7,000W or less, or 200W or more and 5,000W or less. In addition, the energy density of the plasma P in process ST62 can be higher than the energy density of the plasma P in process ST2. The energy density of the plasma P in process ST62 can be, for example, 0.10W / cm³. 2 Above and 10W / cm 2 The following can also be 0.11 W / cm 2 Above and 9W / cm 2 Below that, it could also be 0.14 W / cm 2 Above and 8W / cm 2 Furthermore, in process ST62, the time for generating plasma P is, for example, 10 seconds or more and 100 seconds or less.

[0099] When plasma P is generated in the space defined by the substrate dummy DW and the spray head 16, the plasma P diffused into this space is used to clean the area surrounding the electrostatic holding disk 6, including the mounting surface 6e. This area may include, for example, the shoulder 6c. Additionally, byproducts removed from the electrostatic holding disk 6 by this cleaning may adhere to or deposit on the substrate dummy DW.

[0100] Next, in step ST63, the substrate dummy DW is removed from chamber 1. The substrate dummy DW can be removed from chamber 1 and stored in the FOUP of loading port LP. The substrate dummy DW stored in loading port LP can be moved back into chamber 1 in step ST4 after the etching process (ST1) of the patterned substrate PW is re-executed. In addition, the substrate dummy DW can be cleaned again in step ST5. Thus, the substrate dummy DW used in the second cleaning process (ST6) can be cleaned efficiently.

[0101] <Example>

[0102] In process ST62, the photoresist layer formed on the back side (the side facing the mounting surface 6e) of the substrate dummy DW is etched by varying the distance d from the mounting surface 6e of the electrostatic holding disk 6 to the substrate dummy DW in increments of 0.1 mm from 0.0 mm to 1.0 mm (hereinafter, the examples obtained by varying the distance d are also collectively referred to as "each embodiment"). The etching conditions for the substrate dummy DW are as follows.

[0103] The frequency of high-frequency (HF) power transmission is 40.68 MHz.

[0104] High-frequency power (HF) output: 2700W

[0105] High-frequency power LF output: 0W

[0106] Pressure: 500mTorr

[0107] Gases processed: O2 (900 sccm), CF4 (50 sccm)

[0108] Distance d: as shown in the graph

[0109] Figure 8 This is a graph obtained by marking the in-plane position of the substrate dummy wafer (DW) and the etch rate of the photoresist layer in each embodiment. The substrate dummy wafer (DW) is a silicon wafer with a diameter of 300 mm and a photoresist layer formed on its surface. Figure 8 In the diagram, the horizontal axis shows the in-plane position of the dummy substrate DW, i.e., its position from the center of the dummy substrate DW. The vertical axis shows the etch rate ratio of the photoresist layer. This etch rate ratio is the ratio of the etch rate in each embodiment to the etch rate of process ST2 (in...). Figure 8 In this embodiment, the etching rate of process ST2 is set to 1 to standardize the etching rate of each embodiment. In addition, the etching rate in process ST2 is the etching rate of the photoresist layer formed on the surface of the substrate dummy DW (the surface facing the spray head 16) under the condition that the mounting stage 2 is cleaned in process ST2, with the substrate dummy DW placed on the mounting surface 6e.

[0110] According to this embodiment, such as Figure 8 As shown, a higher etching rate can be obtained at the outer periphery of the substrate dummy DW (e.g., the portion of the substrate dummy DW further out than 148 mm), that is, around the mounting surface 6e of the electrostatic holding pad 6 (e.g., the shoulder 6c). On the other hand, the etching rate can be suppressed at the edge of the mounting surface 6e of the electrostatic holding pad 6 (e.g., the portion corresponding to approximately 145 mm of the substrate dummy DW). For example, when the distance d is 0.0 mm (i.e., the substrate dummy DW is in contact with the mounting surface 6e), the etching rate of the photoresist layer at the outer periphery of the substrate dummy DW, for example, at the position of 148 mm, is low. That is, it is considered that the photoresist layer or byproducts are not efficiently removed at this outer periphery. On the other hand, when the distance d is set to 0.1 mm, the etching rate of the photoresist layer at the outer periphery of the substrate dummy DW, for example, at the position of 148 mm, is about 8 times that at the distance d is 0.0 mm. Similarly, with a distance d of 0.2 mm, the etching rate of the photoresist layer at the 148 mm position is approximately three times that at a distance d of 0.1 mm. Furthermore, it was confirmed that the etching rate of the photoresist layer at the outer periphery of the substrate dummy DW (e.g., the portion further out than the 145 mm position) increases with increasing distance d. The increase in etching rate is significant when the distance d is between 0.2 mm and 0.7 mm. Additionally, as... Figure 3 As shown, in the comparison of each embodiment with process ST2, it was also confirmed that it is effective, especially for the removal of photoresist or by-products on the outer periphery of the substrate dummy die DW.

[0111] As shown above, in this embodiment, by setting the distance d between the substrate dummy DW and the mounting surface 6e to an appropriate distance, the mounting surface 6e can be protected by the substrate dummy DW, and the area around the mounting surface 6e (e.g., the shoulder 6c) can be cleaned using diffused plasma P. Furthermore, in this embodiment, since the mounting surface 6e can be protected by the substrate dummy DW, high-frequency power can be increased in process ST62. Additionally, by using a processing gas such as a fluorine-containing gas, the area around the mounting surface 6e (e.g., the shoulder 6c) can be cleaned more efficiently using diffused plasma P. Therefore, damage to the mounting surface 6e can be suppressed and the mounting surface 6e can be cleaned efficiently in process ST2. On the other hand, damage to the mounting surface 6e can be suppressed and the area around the mounting surface 6e can be cleaned efficiently in process ST6, thus improving the maintenance efficiency of the mounting stage 2. Furthermore, the maintenance time of the mounting stage 2 can be significantly shortened, thereby increasing the productivity of the etching process.

[0112] In addition, Figure 3 In the example described, the processing of steps ST1 to ST6 is explained in the order of steps ST1 to ST6, but the order in which the steps are executed is not limited to this. As an example, steps ST2 and / or ST3 can be executed after steps ST5 and / or ST6. For example, Figure 3 The processes shown can be performed in the order of process ST1, process ST4, process ST5, process ST6, process ST2, and process ST3. As a result, the byproducts generated in process ST1 can be removed or reduced by process ST5 and / or process ST6, and the mounting surface 6e of the electrostatic holding disk 6 can be cleaned.

[0113] Alternatively, step ST5 can be performed after steps ST4 and ST6. Thus, even if there are byproducts deposited or attached to the substrate dummy wafer in step ST6, these byproducts can be removed or reduced in step ST5.

[0114] The above embodiments have been described for illustrative purposes, and various modifications can be made without departing from the scope and spirit of this disclosure. For example, in addition to the capacitively coupled plasma processing apparatus 10, a substrate processing apparatus utilizing any plasma source such as inductively coupled plasma or microwave plasma can also be used.

[0115] In addition, the embodiments in this disclosure may include the following (1) to (27) methods.

[0116] (1) A cleaning method, specifically a cleaning method for a plasma processing device.

[0117] The plasma processing device includes:

[0118] chamber;

[0119] A stage, disposed within the cavity, the stage having a mounting area for mounting a substrate; and

[0120] Electrodes, which are disposed facing the mounting region.

[0121] The cleaning method includes a first cleaning step and a second cleaning step.

[0122] The first cleaning process includes the following steps:

[0123] Supplying a first processing gas into the chamber; and

[0124] Within the space defined by the mounting area and the electrodes, a first plasma is generated from the first processing gas to clean the area of ​​the mounting stage including the mounting area.

[0125] The second cleaning process includes the following steps:

[0126] The substrate dummy is held at a predetermined position at a predetermined distance from the placement area, facing the placement area.

[0127] Supplying a second processing gas into the chamber; and

[0128] In the space defined by the substrate dummy and the electrode held in the specified position, a second plasma is generated from the second processing gas to clean the area surrounding the mounting region in the mounting stage.

[0129] (2) According to the cleaning method described in (1), the first treatment gas contains an oxygen-containing gas.

[0130] (3) According to the cleaning method described in (2), the oxygen-containing gas is O2 gas.

[0131] (4) The second treatment gas includes a fluorine-containing gas according to any of the cleaning methods described in (1) to (3).

[0132] (5) According to the cleaning method described in (4), the fluorine-containing gas contains NF3 gas.

[0133] (6) According to the cleaning method described in (4) or (5), the fluorinated gas contains C x F y (x and y are positive integers) gas.

[0134] (7) The second processing gas comprises O2 gas according to any of the cleaning methods described in (4) to (6).

[0135] (8) Cleaning method as described in any of (1) to (7),

[0136] It also includes a modification process performed between the first cleaning process and the second cleaning process.

[0137] The modification process includes the following steps:

[0138] Supplying an inactive gas into the chamber; and

[0139] In the space defined by the mounting region and the electrode, plasma is generated from the inactive gas to modify the region in the mounting stage that includes the mounting region.

[0140] (9) According to the cleaning method described in (8),

[0141] The inactive gas is nitrogen.

[0142] The region in the mounting stage, including the mounting area, is nitrided by plasma generated from the nitrogen gas.

[0143] (10) Cleaning method as described in any of (1) to (9),

[0144] It also includes a substrate dummy wafer treatment process for cleaning the substrate dummy wafer.

[0145] The substrate dummy wafer processing process includes the following steps:

[0146] The substrate dummy is moved into the cavity;

[0147] The substrate dummy is placed in the placement area; and

[0148] In the space defined by the substrate dummy placed in the mounting area and the electrode, a third plasma is generated from the third processing gas to at least clean the substrate dummy.

[0149] The second cleaning process is performed after the substrate dummy treatment process.

[0150] (11) According to the cleaning method described in (10),

[0151] The third processing gas contains fluorine-containing gas.

[0152] (12) According to the cleaning method described in (11),

[0153] The fluorine-containing gas includes NF3 gas.

[0154] (13) According to the cleaning method described in (11) or (12),

[0155] The fluorine-containing gas contains C x F y (x and y are positive integers) gas.

[0156] (14) The cleaning method described in any of (11) to (13),

[0157] The third processing gas contains O2 gas.

[0158] (15) The cleaning method described in any of (10) to (14),

[0159] The substrate dummy wafer processing process includes the following steps: supplying the mounting stage or the electrode with a high frequency having a first frequency and a high frequency having a second frequency to generate the fourth plasma.

[0160] (16) The cleaning method described in any of (10) to (15),

[0161] The process of holding the substrate dummy includes the following steps: moving the substrate dummy placed in the placement area to the specified position.

[0162] (17) The cleaning method described in any of (10) to (15),

[0163] In the process of moving the substrate dummy wafer into the substrate storage section, the substrate dummy wafer is moved from the substrate storage section into the cavity.

[0164] During the process of holding the substrate dummy, the substrate dummy, which has been moved from the substrate storage section into the chamber, is held at the predetermined position.

[0165] The second cleaning process further includes, after cleaning the area around the placement area in the placement stage, removing the substrate dummy from the chamber to the substrate storage unit.

[0166] (18) The cleaning method described in any of (1) to (17),

[0167] The specified distance is the distance at which no plasma is generated in the space defined by the substrate dummy held in the specified position and the mounting area.

[0168] (19) The cleaning method described in any of (1) to (17),

[0169] The specified distance is 0.01 mm or more and 1 mm or less from the placement area.

[0170] (20) The cleaning method described in any of (1) to (19),

[0171] In the second cleaning process, the time for generating the second plasma is more than 10 seconds and less than 100 seconds.

[0172] (21) The cleaning method described in any of (1) to (20),

[0173] The electrode has multiple gas flow holes.

[0174] In the process of supplying the second processing gas into the chamber, the second processing gas is supplied into the chamber from the gas flow port.

[0175] (22) According to the cleaning method described in any one of (1) to (21),

[0176] The second plasma has a strength of 0.1 W / cm². 2 Above and 10W / cm 2 The following energy densities.

[0177] (23) According to the cleaning method described in any of (1) to (22),

[0178] The energy density of the second plasma is higher than that of the first plasma.

[0179] (24) According to the cleaning method described in (23),

[0180] The first cleaning process includes the following steps: supplying a high-frequency current with a first electrical charge to the stage or the electrode to generate the first plasma.

[0181] The second cleaning process includes the following steps: supplying the stage or the electrode with a high frequency having a second power higher than the first power to generate the second plasma.

[0182] (25) According to the cleaning method described in (24),

[0183] The second power is above 50W and below 10,000W.

[0184] (26) A cleaning method, specifically a cleaning method for a plasma processing device.

[0185] The plasma processing device includes:

[0186] chamber;

[0187] A stage, disposed within the cavity, the stage having a mounting area for mounting a substrate; and

[0188] Electrodes, which are disposed facing the mounting region.

[0189] The cleaning method includes the following steps:

[0190] A substrate dummy is moved into the cavity;

[0191] The substrate dummy is held at a predetermined position at a predetermined distance from the placement area, facing the placement area.

[0192] Supplying processing gas into the chamber; and

[0193] In the space defined by the substrate dummy and the electrode held in the specified position, plasma is generated from the processing gas to clean the area surrounding the mounting area in the mounting stage.

[0194] (27) A plasma treatment method, which is a plasma treatment method in a plasma treatment device.

[0195] The plasma processing device includes:

[0196] chamber;

[0197] A stage, disposed within the cavity, the stage having a mounting area for mounting a substrate; and

[0198] Electrodes, which are disposed facing the mounting region.

[0199] The processing method includes an etching process and a cleaning process.

[0200] The etching process includes the following steps:

[0201] Prepare a patterned substrate, the patterned substrate having an etched film and a mask film having a predetermined pattern formed on the etched film;

[0202] The patterned substrate is placed in the placement area of ​​the placement stage;

[0203] Etching gas is supplied into the chamber;

[0204] High-frequency power is supplied to the stage or the electrodes, and plasma is generated from the etching gas to etch the patterned substrate within the space defined by the patterned substrate and the electrodes; and

[0205] Remove the patterned substrate from the chamber.

[0206] The cleaning process includes the following steps:

[0207] A substrate dummy, different from the patterned substrate, is introduced into the chamber;

[0208] The substrate dummy is held at a predetermined position at a predetermined distance from the placement area, facing the placement area.

[0209] Supplying processing gas into the chamber; and

[0210] In the space defined by the substrate dummy and the electrode held in the specified position, plasma is generated from the processing gas to clean the area surrounding the mounting area in the mounting stage.

[0211] Explanation of reference numerals in the attached figures

[0212] 1: Chamber; 2: Stage; 3: Supporting component; 4: Supporting platform; 5: Focusing ring; 6: Electrostatic holding disk; 6a: Electrode; 6b: Insulator; 6c: Shoulder; 6e: Mounting surface; 10: Plasma processing device; 10a: First RF power supply; 10b: Second RF power supply; 11a: First matching device; 11b: Second matching device; 12: DC power supply; 15: Gas supply source (gas supply section); 15: Gas supply source; 15a: Gas supply piping; 16: Spray head; 3 0: Gas supply pipe; 61: Elevator; 62: Actuator; 72: Variable DC power supply; 73: On / off switch; 81: Exhaust port; 82: Exhaust pipe; 83: First exhaust device; 84: Loading / unloading port; 85: Gate valve; 86: Deposit shield; 87: Deposit shield; 89: Conductive component (GND block); 95: Insulating component; 100: Control unit; 101: Process controller; 102: User interface; 103: Storage unit; 200: Through hole for pins.

Claims

1. A cleaning method, specifically a cleaning method for a plasma processing device. The plasma processing device includes: Chamber; A stage, disposed within the cavity, the stage having a mounting area for mounting a substrate; and Electrodes, which are disposed facing the mounting region. The cleaning method includes a first cleaning step and a second cleaning step. The first cleaning process includes the following steps: Supplying a first processing gas into the chamber; and Within the space defined by the mounting area and the electrodes, a first plasma is generated from the first processing gas to clean the area of ​​the mounting stage including the mounting area. The second cleaning process includes the following steps: The substrate dummy is held at a predetermined position at a predetermined distance from the placement area, facing the placement area. Supplying a second processing gas into the chamber; and Within the space defined by the substrate dummy held in the predetermined position and the electrodes, a second plasma is generated from the second processing gas to clean the area surrounding the mounting region in the mounting stage. The cleaning method further includes a modification step performed between the first cleaning step and the second cleaning step. The modification process includes the following steps: Supplying N2 gas into the chamber; and In the space defined by the mounting region and the electrode, a third plasma is generated from the N2 gas to nitrid the region in the mounting stage that includes the mounting region.

2. The cleaning method according to claim 1, wherein, The first processing gas contains oxygen-containing gas.

3. The cleaning method according to claim 1 or 2, wherein, The second processing gas contains a fluorine-containing gas.

4. The cleaning method according to claim 1 or 2, wherein, It also includes a substrate dummy wafer treatment process for cleaning the substrate dummy wafer. The substrate dummy wafer processing process includes the following steps: The substrate dummy is moved into the cavity; The substrate dummy is placed in the placement area; as well as In the space defined by the substrate dummy placed in the mounting region and the electrode, a fourth plasma is generated from a fourth processing gas to at least clean the substrate dummy. The second cleaning process is performed after the substrate dummy treatment process.

5. The cleaning method according to claim 4, wherein, The fourth processing gas contains fluorine-containing gas.

6. The cleaning method according to claim 5, wherein, The fourth processing gas contains O2 gas.

7. The cleaning method according to claim 4, wherein, The process of holding the substrate dummy includes the following steps: moving the substrate dummy placed in the placement area to the specified position.

8. The cleaning method according to claim 4, wherein, In the process of moving the substrate dummy wafer into the substrate storage section, the substrate dummy wafer is moved from the substrate storage section into the cavity. During the process of holding the substrate dummy, the substrate dummy, which has been moved from the substrate storage section into the chamber, is held at the predetermined position. The second cleaning process further includes, after cleaning the area around the placement area in the placement stage, removing the substrate dummy from the chamber to the substrate storage unit.

9. The cleaning method according to claim 1 or 2, wherein, The specified distance is the distance at which no plasma is generated in the space defined by the substrate dummy held in the specified position and the mounting area.

10. The cleaning method according to claim 1 or 2, characterized in that, The specified distance is 0.01 mm or more and 1 mm or less from the placement area.

11. A cleaning method, specifically a cleaning method for a plasma processing device. The plasma processing device includes: Chamber; A stage, disposed within the cavity, the stage having a mounting area for mounting a substrate; and Electrodes, which are disposed facing the mounting region. The cleaning method includes the following steps: The modification process includes a step of supplying N2 gas into the chamber, and a step of generating a third plasma from the N2 gas in the space defined by the mounting area and the electrode to nitrid the region of the mounting stage including the mounting area. A substrate dummy is moved into the cavity; The substrate dummy is held at a predetermined position at a predetermined distance from the placement area, facing the placement area. Supplying processing gas into the chamber; and In the space defined by the substrate dummy and the electrode held in the specified position, a second plasma is generated from the processing gas to clean the area surrounding the mounting region in the mounting stage.

12. A plasma treatment method, which is a plasma treatment method in a plasma treatment device. The plasma processing device includes: Chamber; A stage, disposed within the cavity, the stage having a mounting area for mounting a substrate; and Electrodes, which are disposed facing the mounting region. The plasma treatment method includes an etching process and a cleaning process. The etching process includes the following steps: Prepare a patterned substrate, the patterned substrate having an etched layer and a mask layer having a predetermined pattern formed on the etched layer; The patterned substrate is placed in the placement area of ​​the placement stage; Etching gas is supplied into the chamber; High-frequency power is supplied to the stage or the electrode, and plasma is generated from the etching gas to etch the patterned substrate within the space defined by the patterned substrate and the electrode. as well as Remove the patterned substrate from the chamber. The cleaning process includes the following steps: The modification process includes a step of supplying N2 gas into the chamber, and a step of generating a third plasma from the N2 gas in the space defined by the mounting area and the electrode to nitrid the region of the mounting stage including the mounting area. A substrate dummy, different from the patterned substrate, is introduced into the chamber; The substrate dummy is held at a predetermined position at a predetermined distance from the placement area, facing the placement area. Supplying processing gas into the chamber; and In the space defined by the substrate dummy and the electrode held in the specified position, a second plasma is generated from the processing gas to clean the area surrounding the mounting region in the mounting stage.

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