A spray device for epitaxial furnace

Abstract

The application discloses an epitaxial furnace spraying device, which comprises a shell, an upper cover, and at least one spraying partition plate. The shell comprises a bottom plate and a side plate connected with each other. A plurality of first gas outlets are arranged on the bottom plate, and at least two gas inlets are arranged on the side plate. The upper cover is arranged on the shell. The spraying partition plate is arranged between the upper cover and the bottom plate. Any adjacent upper cover, spraying partition plate and bottom plate form a gas flow cavity. The gas inlets and the gas flow cavities are in one-to-one fluid communication. A plurality of gas guide holes are arranged on the spraying partition plate, and a gas guide pipe or a gas blocking plug is arranged in each gas guide hole. The gas flow cavities are in fluid communication with the epitaxial furnace through the gas guide pipes or the first gas outlets. The number of the gas guide pipes or the gas blocking plugs can be adjusted according to the required gas flow of the corresponding gas flow cavities. The flow of the gas in the corresponding gas flow cavities and the proportion of the mixed gas can be controlled by adjusting the number of the gas guide pipes and the gas blocking plugs. The structure is simple, and the manufacturing cost is low.

Description

Technical Field

[0001] This invention relates to the field of epitaxial furnace equipment technology, and in particular to an epitaxial furnace spraying device. Background Technology

[0002] An epitaxial furnace is a device used to produce semiconductor materials, forming semiconductor structures by depositing thin films on a substrate surface. The gas spraying system within the epitaxial furnace serves to uniformly mix and spray process gases, ensuring atmosphere control and material quality during the epitaxial process.

[0003] Currently, existing epitaxial furnace spraying devices have some problems and limitations. First, since the ratio of the mixed gas directly affects the quality and performance of the material during the epitaxial process, it is necessary to be able to precisely control the ratio of the mixed gas. However, existing spraying devices have certain limitations in controlling the ratio of the mixed gas, requiring a large number of flow controllers and pressure regulators for flow control, which makes the entire flow control system complex and costly to manufacture.

[0004] Therefore, there is a need to provide a new type of epitaxial furnace spraying device that can solve the problems and limitations of the existing technology, provide better control of mixed gas, and at the same time make the entire flow control system have a simple structure and low manufacturing cost. Summary of the Invention

[0005] The technical problem to be solved by the embodiments of the present invention is to provide an epitaxial furnace spraying device, which controls the flow rate of gas in the corresponding gas flow chamber and the ratio of mixed gas by adjusting the number of gas guide pipes and gas blocking plugs. The device has a simple structure and low manufacturing cost.

[0006] To solve the above-mentioned technical problems, the present invention provides an epitaxial furnace spraying device, comprising:

[0007] The housing includes a connected bottom plate and a side plate, wherein the bottom plate is provided with a plurality of first air outlets and the side plate is provided with at least two air inlets;

[0008] The top cover is fitted onto the housing.

[0009] At least one spray baffle is disposed between the upper cover and the bottom plate, and a gas flow cavity is formed between any adjacent upper cover, spray baffle and bottom plate. The air inlet and the gas flow cavity are fluidly connected in a one-to-one correspondence. The spray baffle is provided with a plurality of air guide holes, and an air guide pipe or air blocking plug is inserted in the air guide hole. The gas flow cavity is fluidly connected to the epitaxial furnace through the air guide pipe or the first air outlet.

[0010] The number of the air guide tubes or the air-blocking plugs can be adjusted according to the required gas flow rate of the corresponding gas flow chamber.

[0011] In one possible implementation, the at least one spray partition includes a first spray partition and a second spray partition; the side plate is stepped, and includes a first side plate portion, a second side plate portion and a third side plate portion connected in sequence from the upper cover toward the bottom plate, the first side plate portion has a wall thickness smaller than that of the second side plate portion, and the second side plate portion has a wall thickness smaller than that of the third side plate portion; a first stepped surface is formed between the first side plate portion and the second side plate portion, and a second stepped surface is formed between the second side plate portion and the third side plate portion;

[0012] The first spray partition is placed on the first stepped surface, and the second spray partition is placed on the second stepped surface.

[0013] In one possible implementation, the at least two gas inlet holes include a first gas inlet hole provided on the first side plate portion, a second gas inlet hole provided on the second side plate portion, and a third gas inlet hole provided on the third side plate portion.

[0014] A first gas flow cavity is formed between the upper cover and the first spray partition, and the first gas flow cavity is in communication with the first gas inlet hole; a second gas flow cavity is formed between the first spray partition and the second spray partition, and the second gas flow cavity is in communication with the second gas inlet hole; a third gas flow cavity is formed between the second spray partition and the bottom plate; and the third gas flow cavity is in communication with the third gas inlet hole.

[0015] In one possible implementation, the first spray partition includes a first circular plate and a first flange plate connected to the edge of the first circular plate; the first flange plate has a first radial gap with the inner wall of the first side plate portion, and the first flange plate has a first axial gap with the upper cover.

[0016] In one possible implementation, the second spray partition includes a second circular plate and a second flange plate connected to the edge of the second circular plate; the second flange plate has a second radial gap with the inner wall of the second side plate portion, and the second flange plate has a second axial gap with the upper cover.

[0017] In one possible implementation, the spray device further includes a spray bottom plate placed on the bottom plate; the spray bottom plate includes a third circular plate and a third flange plate connected to the edge of the third circular plate; the third flange plate has a third radial gap with the inner wall of the third side plate portion, and the third flange plate has a third axial gap with the upper cover.

[0018] In an implementable implementation, the first circular plate is provided with a first gas guide hole, the second circular plate is provided with a second gas guide hole, the third circular plate is provided with a third gas guide hole, and the bottom plate is provided with a fourth gas guide hole.

[0019] The first gas guide hole, the second gas guide hole, the third gas guide hole and the fourth gas guide hole are identical in number and position.

[0020] In an implementable implementation, a first gas guide pipe or a first gas blocking plug is arranged in the first gas guide hole, one end of the first gas guide pipe is in communication with the first gas flow cavity, the other end of the first gas guide pipe passes through the second gas guide hole, the third gas guide hole and the fourth gas guide hole at the corresponding positions and is in communication with the epitaxial furnace, and the first gas blocking plug is used to close the corresponding first gas guide hole.

[0021] In an implementable implementation, a second gas guide pipe or a second gas blocking plug is arranged in the second gas guide hole, one end of the second gas guide pipe is in communication with the second gas flow cavity, the other end of the second gas guide pipe passes through the third gas guide hole and the fourth gas guide hole at the corresponding positions and is in communication with the epitaxial furnace, and the second gas blocking plug is used to close the corresponding second gas guide hole.

[0022] In an implementable implementation, the first gas guide pipe is a hollow tubular structure, and the first gas guide pipe is provided with a first end cover at one end thereof facing the first gas flow cavity, and the first end cover is provided with a plurality of first air holes.

[0023] In an implementable implementation, the structure of the second gas guide pipe is identical to that of the first gas guide pipe, and the length of the second gas guide pipe is smaller than that of the first gas guide pipe.

[0024] In an implementable implementation, the third circular plate is provided with a second gas outlet hole, and the number and position of the second gas outlet hole are identical to those of the first gas outlet hole.

[0025] In an implementable implementation, a temperature probe pipe is arranged in the upper cover, the first circular plate, the second circular plate, the third circular plate and the bottom plate.

[0026] In an implementable implementation, the first side plate part, the second side plate part, the third side plate part and the bottom plate are integrally formed.

[0027] In an implementable implementation, the upper cover is detachably connected with the shell.

[0028] The implementation of the present application has the following beneficial effects:

[0029] The application provides an epitaxial furnace spraying device, which comprises a shell, a plurality of first gas outlets provided on a bottom plate of the shell, at least two gas inlets provided on a side plate of the shell, an upper cover arranged on the shell, at least one spraying partition plate arranged between the upper cover and the bottom plate, a gas flow cavity formed between any adjacent upper cover, spraying partition plate and bottom plate, and a plurality of gas guide holes provided on the spraying partition plate.

[0030] It should be understood that the general description above and the following detailed description are only exemplary and explanatory, and cannot limit the application. BRIEF DESCRIPTION OF DRAWINGS

[0031] The drawings incorporated into the specification and forming a part of the specification, show embodiments consistent with the application, and together with the specification, serve to explain the principles of the application, and do not constitute an improper limitation on the application.

[0032] Figure 1 is a structure diagram of the epitaxial furnace spraying device according to an embodiment of the application Figure 1 ;

[0033] Figure 2 is a structure diagram of the epitaxial furnace spraying device according to an embodiment of the application Figure 2 ;

[0034] Figure 3 is an exploded structure diagram of the epitaxial furnace spraying device according to an embodiment of the application

[0035] Figure 4 is a structure diagram of the first spraying partition plate according to an embodiment of the application

[0036] Figure 5 is a structure diagram of the second spraying partition plate according to an embodiment of the application

[0037] Figure 6 is a structure diagram of the spraying bottom plate according to an embodiment of the application

[0038] Figure 7 is a structure diagram of the shell according to an embodiment of the application

[0039] Figure 8 is a structure diagram of the first gas guide pipe according to an embodiment of the application

[0040] Figure 9 is Figure 8 a sectional view of the embodiment of the present application;

[0041] Figure 10 is a front view of the spray device of the epitaxial furnace according to an embodiment of the present application; Figure 1 ;

[0042] Figure 11 is a sectional view of A-A in Figure 10 ;

[0043] Figure 12 is a front view of the spray device of the epitaxial furnace according to an embodiment of the present application; Figure 2 ;

[0044] Figure 13 is a sectional view of B-B in Figure 12 .

[0045] Reference numerals in the drawings: 1 - housing, 11 - bottom plate, 111 - first gas outlet hole, 112 - fourth gas guide hole, 12 - side plate, 121 - gas inlet hole, 1211 - first gas inlet hole, 1212 - second gas inlet hole, 1213 - third gas inlet hole, 122 - first side plate part, 123 - second side plate part, 124 - third side plate part, 125 - first step surface, 126 - second step surface;

[0046] 2 - upper cover;

[0047] 3 - spray partition, 31 - first spray partition, 311 - first circular plate, 312 - first flange plate, 3121 - first radial gap, 3122 - first axial gap, 32 - second spray partition, 321 - second circular plate, 322 - second flange plate, 3221 - second radial gap, 3222 - second axial gap, 34 - gas flow cavity, 341 - first gas flow cavity, 342 - second gas flow cavity, 343 - third gas flow cavity, 35 - gas guide hole, 351 - first gas guide hole, 352 - second gas guide hole, 36 - gas guide pipe, 361 - first gas guide pipe, 3611 - first end cover, 3612 - first air hole, 362 - second gas guide pipe, 37 - first gas blocking plug;

[0048] 4 - spray bottom plate, 41 - third circular plate, 411 - third gas guide hole, 412 - second gas outlet hole, 42 - third flange plate, 421 - third radial gap, 422 - third axial gap;

[0049] 5 - temperature probe. DETAILED DESCRIPTION

[0050] In order to make the above objectives, features and advantages of the present application more obvious and comprehensible, the specific embodiments of the present application will be described in detail below with reference to the drawings. In the following description, a large number of specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the spirit of the present application, and therefore the present application is not limited to the specific embodiments disclosed below.

[0051] It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element or there can be an intervening element. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or there can be an intervening element. The terms "vertical", "horizontal", "left", "right", and similar expressions used herein are for illustrative purposes only.

[0052] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0053] In the growth process of the epitaxial furnace, generally, chemical vapor deposition method is adopted, and it is required to provide silicon source gas, hydrogen, nitrogen and carbon source gas into the reaction cavity of the epitaxial furnace. The above-mentioned gases are respectively transported into the reaction cavity of the epitaxial furnace, but it is inconvenient to control the proportion of the mixed gas, and a large number of flow controllers and pressure regulators are required to monitor, which leads to a complex control system for monitoring the gas flow of the epitaxial furnace and high manufacturing cost.

[0054] In order to solve the above-mentioned problems, as shown in Figures 1-3 The embodiment provides a spraying device for an epitaxial furnace, which comprises a shell 1 comprising a bottom plate 11 and a side plate 12 connected to each other, a plurality of first gas outlets 111 are arranged on the bottom plate 11, and at least two gas inlets 121 are arranged on the side plate 12; and an upper cover 2 arranged on the shell 1. When the epitaxial furnace is provided with gas, the gas enters the reaction cavity of the epitaxial furnace from the gas inlets 121, one gas inlet 121 can transport one kind of gas, so that at least two kinds of gas are transported into the reaction cavity of the epitaxial furnace through the spraying device through the at least two gas inlets 121, so that the at least two kinds of gas are mixed in the reaction cavity.

[0055] At least one spray partition 3 is arranged between the upper cover 2 and the bottom plate 11, and any adjacent upper cover 2, spray plate and bottom plate 11 form a gas flow cavity 34, and the gas inlet hole 121 and the gas flow cavity 34 are in one-to-one fluid communication; a plurality of gas guide holes 35 are arranged on the spray partition 3, and a gas guide pipe 36 or a gas blocking plug is arranged in the gas guide hole 35; the gas flow cavity 34 is in fluid communication with the epitaxial furnace through the gas guide pipe 36 or the first gas outlet hole 111. The upper cover 2 and the bottom plate 11 have a containing space, and when at least one spray partition 3 is arranged between the upper cover 2 and the bottom plate 11, the containing space is divided into at least two gas flow cavities 34 by the at least one spray partition 3; the gas inlet hole 121 arranged on the side plate 12 is in one-to-one communication with the gas flow cavity 34, and the gas enters the reaction cavity of the epitaxial furnace through the gas guide pipe 36 on the spray partition 3 or through the first gas outlet hole 111 on the bottom plate 11 after flowing through the gas flow cavity 34 from the gas inlet hole 121. Here, an example is taken to illustrate that one spray partition 3 is arranged between the upper cover 2 and the bottom plate 11, and the spray partition 3 divides the containing space into two gas flow cavities 34, an upper gas flow cavity 34 is formed between the upper cover 2 and the spray partition 3, and a lower gas flow cavity 34 is formed between the spray partition 3 and the bottom plate 11; the upper gas inlet hole 121 connected with the upper gas flow cavity 34 and the lower gas inlet hole 121 connected with the lower gas flow cavity 34 are arranged on the side plate 12; the upper gas inlet hole 121 and the lower gas inlet hole 121 respectively transport two kinds of gas, the upper gas inlet hole 121 transports silicon source gas, and the lower gas inlet hole 121 transports hydrogen; the silicon source gas enters the upper gas flow cavity 34 through the upper gas inlet hole 121, and the silicon source gas is transported to the reaction cavity of the epitaxial furnace through the gas guide pipe 36 on the spray partition 3; the hydrogen enters the lower gas flow cavity 34 through the lower gas inlet hole 121, and the hydrogen is transported to the reaction cavity of the epitaxial furnace through the gas outlet hole on the bottom plate 11; before the silicon source gas and the hydrogen are transported to the reaction cavity of the epitaxial furnace, the silicon source gas and the hydrogen do not contact and mix. The gas guide pipe 36 on the spray partition 3 transports the gas to the reaction cavity, and the gas blocking plug blocks the excess gas guide holes 35 on the spray partition 3, so that the different gases do not contact.

[0056] The number of the gas guide pipes 36 or the gas blocking plugs can be adjusted according to the required gas flow of the corresponding gas flow cavity 34. In the process of transporting the gas from the gas inlet hole 121 to the reaction cavity of the epitaxial furnace, the gas flows through the corresponding gas flow cavity 34 and then passes through the gas guide pipe 36 on the spray partition 3 to enter the reaction cavity of the epitaxial furnace, and the size of the gas flow can be controlled by changing the number of the gas guide pipes 36, and the gas blocking plugs are used to block the other unnecessary gas guide holes 35, thereby reducing the use of the flow controller and the pressure regulator in the previous spray device of the epitaxial furnace, reducing the equipment cost, simplifying the structure, and also adjusting the proportion of the mixed gas.

[0057] In a possible implementation, asFigures 3-7 As shown, the at least one spray partition 3 comprises a first spray partition 31 and a second spray partition 32; the side plate 12 is stepped, and the side plate 12 comprises a first side plate portion 122, a second side plate portion 123 and a third side plate portion 124 connected in sequence from the upper cover 2 to the bottom plate 11, the wall thickness of the first side plate portion 122 is less than that of the second side plate portion 123, and the wall thickness of the second side plate portion 123 is less than that of the third side plate portion 124; a first step surface 125 is formed between the first side plate portion 122 and the second side plate portion 123, and a second step surface 126 is formed between the second side plate portion 123 and the third side plate portion 124; the first spray partition 31 is placed on the first step surface 125, and the second spray partition 32 is placed on the second step surface 126. By placing the first spray partition 31 and the second spray partition 32 on the first step surface 125 and the second step surface 126 respectively, the shell 1 is divided into three gas flow cavities 34, so that different gases do not contact and mix with each other, and the structure is simple.

[0058] In a possible implementation, as shown in Figure 7 and 10 As shown in FIG. 13, the at least two gas inlets 121 comprise a first gas inlet 1211 provided on the first side plate portion 122, a second gas inlet 1212 provided on the second side plate portion 123 and a third gas inlet 1213 provided on the third side plate portion 124; a first gas flow cavity 341 is formed between the upper cover 2 and the first spray partition 31, and the first gas flow cavity 341 communicates with the first gas inlet 1211; a second gas flow cavity 342 is formed between the first spray partition 31 and the second spray partition 32, and the second gas flow cavity 342 communicates with the second gas inlet 1212; a third gas flow cavity 343 is formed between the second spray partition 32 and the bottom plate 11; and the third gas flow cavity 343 communicates with the third gas inlet 1213. The silicon source gas is transported from the first gas inlet 1211 into the first gas flow cavity 341, the nitrogen gas and the carbon source gas are transported from the second gas inlet 1212 into the second gas flow cavity 342, and the hydrogen gas is transported from the third gas inlet 1213 into the third gas flow cavity 343, so that the silicon source gas, the nitrogen gas and the carbon source gas, and the hydrogen gas do not contact with each other until the three kinds of gases enter the reaction cavity of the epitaxial furnace for mixing.

[0059] In a possible implementation, as shown in Figure 4 and 10As shown in FIG. 13, the first spray partition 31 comprises a first circular plate 311 and a first flange plate 312 connected to the edge of the first circular plate 311; the first flange plate 312 has a first radial gap 3121 with the inner wall of the first side plate part 122, and has a first axial gap 3122 with the upper cover 2. The silicon source gas enters the first radial gap 3121 from the first gas inlet hole 1211, and due to the blockage of the first flange plate 312 and the light mass of the gas, the silicon source gas moves towards the upper cover 2, enters the first axial gap, and moves towards the first spray partition 31 through the first axial gap until the silicon source gas passes through the first spray partition 31 and enters the reaction chamber of the epitaxial furnace. The first flange plate 312, the first radial gap 3121 and the first axial gap 3122 serve as a flow guide for the movement of the silicon source gas.

[0060] In a possible implementation, as shown in FIG. 1, Figure 5 and 10 As shown in FIG. 13, the second spray partition 32 comprises a second circular plate 321 and a second flange plate 322 connected to the edge of the second circular plate 321; the second flange plate 322 has a second radial gap 3221 with the inner wall of the second side plate part 123, and has a second axial gap 3222 with the upper cover 2. The nitrogen and carbon source gas enters the second radial gap 3221 from the second gas inlet hole 1212, and due to the blockage of the second flange plate 322 and the light mass of the gas, the nitrogen and carbon source gas moves towards the first spray partition 31, enters the second axial gap, and moves towards the second spray partition 32 through the second axial gap until the nitrogen and carbon source gas passes through the second spray partition 32 and enters the reaction chamber of the epitaxial furnace. The second flange plate 322, the second radial gap 3221 and the second axial gap 3222 serve as a flow guide for the movement of the nitrogen and carbon source gas.

[0061] In a possible implementation, as shown in FIG. 1, Figure 6 and 10As shown in FIGS. 10-13, the shower device further comprises a shower bottom plate 4 placed on the bottom plate 11; the shower bottom plate 4 comprises a third circular plate 41 and a third flange plate 42 connected to the edge of the third circular plate 41; the third flange plate 42 has a third radial gap 421 with the inner wall of the third side plate part 124, and the third flange plate 42 has a third axial gap 422 with the upper cover 2. Hydrogen enters the third radial gap 421 from the third gas inlet hole 1213, and due to the blockage of the third flange plate 42 and the lightness of the gas, the hydrogen moves towards the second shower partition plate 32, enters the third axial gap, and moves towards the shower bottom plate 4 and the bottom plate 11 through the third axial gap, until the hydrogen passes through the shower bottom plate 4 and the bottom plate 11 into the reaction chamber of the epitaxial furnace. The third flange plate 42, the third radial gap 421 and the third axial gap 422 serve as a guide for the movement of hydrogen.

[0062] In a possible implementation, as shown in FIGS. 10-13, Figures 4-7 As shown in FIGS. 10-13, the first circular plate 311 is provided with a first gas guide hole 351, the second circular plate 321 is provided with a second gas guide hole 352, the third circular plate 41 is provided with a third gas guide hole 411, and the bottom plate 11 is provided with a fourth gas guide hole 112; the number and position of the first gas guide hole 351, the second gas guide hole 352, the third gas guide hole 411 and the fourth gas guide hole 112 are the same, and the number and position are the same, which is conducive to the penetration of the gas guide pipe 36, and when calculating the proportion of the mixed gas, the number of required gas guide pipes 36 and gas blocking plugs can be easily calculated, reducing the workload.

[0063] In a possible implementation, as shown in FIGS. 10-13, Figures 10-13 As shown in FIGS. 10-13, the first gas guide hole 351 is provided with a first gas guide pipe 361 or a first gas blocking plug 37, one end of the first gas guide pipe 361 communicates with the first gas flow cavity 341, and the other end penetrates through the corresponding second gas guide hole 352, third gas guide hole 411 and fourth gas guide hole 112 and communicates with the epitaxial furnace; the first gas blocking plug 37 is used to close the corresponding first gas guide hole 351. The first gas guide pipe 361 can transmit the silicon source gas in the first gas flow cavity 341 to the reaction chamber of the epitaxial furnace, and the number of the first gas guide pipe 361 and the first gas blocking plug 37 can be calculated according to the required gas flow of the silicon source gas. Correspondingly, the first gas blocking plug 37 is provided in the first gas guide hole 351 without the first gas guide pipe 361, which can avoid the contact between the silicon source gas in the first gas flow cavity 341 and the nitrogen gas and carbon source gas in the second gas flow cavity 342.

[0064] In a possible implementation, as shown in FIGS. 10-13, Figures 10-13As shown, the second gas guide pipe 362 is provided in the second gas guide hole 352, and one end of the second gas guide pipe 362 is in communication with the second gas flow cavity 342, and the other end of the second gas guide pipe 362 is in communication with the reaction chamber of the epitaxial furnace through the third gas guide hole 411 and the fourth gas guide hole 112. The second gas guide pipe 362 is used to block the corresponding second gas guide hole 352. The second gas guide pipe 362 is used to transmit the nitrogen and carbon source gas in the second gas flow cavity 342 to the reaction chamber of the epitaxial furnace. The number of the second gas guide pipe 362 and the second gas guide plug can be calculated according to the required gas flow of the nitrogen and carbon source gas. The second gas guide plug is provided in the second gas guide hole 352 in which the second gas guide pipe 362 is not provided, so as to avoid the contact between the nitrogen and carbon source gas in the second gas flow cavity 342 and the hydrogen in the third gas flow cavity 343.

[0065] In a possible implementation, as shown in Figure 8 and 9 The first gas guide pipe 361 is a hollow tubular structure, and the first end cover 3611 is arranged on one end of the first gas guide pipe 361 which is directed to the first gas flow cavity 341. The first end cover 3611 is provided with a plurality of first air holes 3612. The first air holes 3612 are in communication with the first gas flow cavity 341. One end of the first gas guide pipe 361 is open to the reaction chamber of the epitaxial furnace. The plurality of first air holes 3612 can be used to uniformly transmit the silicon source gas to the reaction chamber of the epitaxial furnace. The first gas guide pipe 361 is arranged in a hollow tubular structure, so that the silicon source gas can be smoothly transported in the first gas guide pipe 361.

[0066] In a possible implementation, the structure of the second gas guide pipe 362 is the same as that of the first gas guide pipe 361, and the length of the second gas guide pipe 362 is less than that of the first gas guide pipe 361. As shown in Figures 10-13 Because the first gas guide pipe 361 needs to be provided in the first gas guide hole 351 and pass through the second gas guide hole 352, the third gas guide hole 411 and the fourth gas guide hole 112 to be in communication with the reaction chamber of the epitaxial furnace, and the second gas guide pipe 362 only needs to be provided in the second gas guide hole 352 and pass through the third gas guide hole 411 and the fourth gas guide hole 112 to be in communication with the reaction chamber of the epitaxial furnace, the length of the first gas guide pipe 361 is longer than that of the second gas guide pipe 362.

[0067] In a possible implementation, as shown in Figure 6 and 7As shown, the third circular plate 41 is provided with a second gas outlet 412, which is the same in number and position as the first gas outlet 111. Hydrogen gas in the third gas flow chamber 343 enters the reaction chamber of the epitaxial furnace through the second gas outlet 412 and the first gas outlet 111. The diameter of the second gas outlet 412 is smaller than that of the third gas guide hole 411, but the number of second gas outlets 412 is much greater than the number of third gas guide holes 411. The purpose of providing more second gas outlets 412 is to uniformly deliver hydrogen gas to the reaction chamber of the epitaxial furnace. Because the spray base plate 4 is placed on the base plate 11, there is almost no gap between the spray base plate 4 and the base plate 11. Therefore, the second gas outlets 412 need to overlap with the first gas outlets 111 to ensure that hydrogen gas is smoothly delivered to the reaction chamber of the epitaxial furnace.

[0068] In one possible implementation, such as Figures 1-3 As shown in Figure 13, a temperature sensing tube 5 is installed on the upper cover 2, the first circular plate 311, the second circular plate 321, the third circular plate 41, and the bottom plate 11. The temperature sensing tube 5 can detect the temperature inside the epitaxial furnace. Since the spray device is located at the top of the epitaxial furnace, the axial direction of the spray device is parallel to the height direction of the epitaxial furnace. The temperature sensing tube 5 is installed through the upper cover 2, the first circular plate 311, the second circular plate 321, the third circular plate 41, and the bottom plate 11. That is, the length direction of the temperature sensing tube 5 is parallel to the height direction of the epitaxial furnace, which can detect the temperature of the epitaxial furnace at different heights.

[0069] In one possible implementation, the first side plate 122, the second side plate 123, the third side plate 124, and the base plate 11 are integrally formed. This integral forming design ensures that the gas is sealed within the housing 1, maintains stable gas pressure within the housing 1, ensures stable gas delivery, and prevents gas leakage into the air, thus avoiding waste.

[0070] In one possible implementation, the top cover 2 is detachably connected to the housing 1. The detachable top cover 2 facilitates the removal of the first spray baffle 31 and the second spray baffle 32, making it easy to replace the air guide pipe 36 and the air stopper when the ratio of the mixed gas needs to be changed, resulting in a simple structure.

[0071] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0072] The above embodiments only express several implementation manners of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent. It should be noted that for ordinary skilled persons in the art, without departing from the concept of the present application, several modifications and improvements can be made, which are within the scope of protection of the present application. Therefore, the protection scope of the patent of the present application should be subject to the appended claims.

Claims

1. An epitaxial furnace spraying device, characterized by comprising: The utility model relates to a shower device for epitaxial furnace, which comprises a shell (1) including a bottom plate (11) and a side plate (12) connected to each other, a plurality of first air outlets (111) are arranged on the bottom plate (11), and at least two air inlets (121) are arranged on the side plate (12). An upper cover (2) is arranged on the shell (1). At least one shower partition plate (3) is arranged between the upper cover (2) and the bottom plate (11), and any adjacent upper cover (2), shower partition plate (3) and bottom plate (11) form a gas flow cavity (34), the air inlets (121) and the gas flow cavities (34) are in one-to-one fluid communication, a plurality of air guide holes (35) are arranged on the shower partition plate (3), air guide pipes (36) or air blocking plugs are arranged in the air guide holes (35), and the gas flow cavities (34) are in fluid communication with the epitaxial furnace through the air guide pipes (36) or the first air outlets (111). The number of the air guide pipes (36) or the air blocking plugs can be adjusted according to the required gas flow of the corresponding gas flow cavity (34). The shower device further comprises a shower bottom plate (4) placed on the bottom plate (11), the shower bottom plate (4) comprises a third circular plate (41) and a third flange plate (42) connected to the edge of the third circular plate (41), and a plurality of third air guide holes (411) are arranged on the third circular plate (41). Second air outlets (412) are arranged on the third circular plate (41). The number and position of the second air outlets (412) are the same as those of the first air outlets (111). The diameter of the second air outlets (412) is smaller than that of the third air guide holes (411), but the number of the second air outlets (412) is much larger than that of the third air guide holes (411). The at least one shower partition plate (3) comprises a first shower partition plate (31) and a second shower partition plate (32), the side plate (12) is stepped, the side plate (12) comprises a first side plate part (122), a second side plate part (123) and a third side plate part (124) connected in sequence from the upper cover (2) to the bottom plate (11), the wall thickness of the first side plate part (122) is smaller than that of the second side plate part (123), and the wall thickness of the second side plate part (123) is smaller than that of the third side plate part (124), a first step surface (125) is formed between the first side plate part (122) and the second side plate part (123), and a second step surface (126) is formed between the second side plate part (123) and the third side plate part (124).

2. The epitaxial furnace showering apparatus of claim 1, wherein The first shower partition plate (31) is placed on the first step surface (125), and the second shower partition plate (32) is placed on the second step surface (126). The at least two air inlets (121) comprise a first air inlet (1211) arranged on the first side plate part (122), a second air inlet (1212) arranged on the second side plate part (123) and a third air inlet (1213) arranged on the third side plate part (124).

3. The epitaxial furnace showerhead of claim 2, wherein, ​ The first gas flow cavity (341) is in communication with the first gas inlet hole (1211); the second gas flow cavity (342) is in communication with the second gas inlet hole (1212); the third gas flow cavity (343) is in communication with the third gas inlet hole (1213).

4. The epitaxial furnace showerhead of claim 3, wherein, The first spray baffle (31) comprises a first circular plate (311) and a first flange plate (312) connected to the edge of the first circular plate (311); the first flange plate (312) has a first radial gap (3121) between the inner wall of the first side plate part (122) and the first flange plate (312); the first flange plate (312) has a first axial gap (3122) between the first flange plate (312) and the upper cover (2); The second spray baffle (32) comprises a second circular plate (321) and a second flange plate (322) connected to the edge of the second circular plate (321); the second flange plate (322) has a second radial gap (3221) between the inner wall of the second side plate part (123) and the second flange plate (322); the second flange plate (322) has a second axial gap (3222) between the second flange plate (322) and the upper cover (2).

5. The epitaxial furnace showerhead of claim 4, wherein, The third flange plate (42) has a third radial gap (421) between the inner wall of the third side plate part (124) and the third flange plate (42); the third flange plate (42) has a third axial gap (422) between the third flange plate (42) and the upper cover (2).

6. The epitaxial furnace showerhead of claim 5, wherein, The first circular plate (311) is provided with a first gas guide hole (351); the second circular plate (321) is provided with a second gas guide hole (352); and the bottom plate (11) is provided with a fourth gas guide hole (112). The number and position of the first gas guide hole (351), the second gas guide hole (352), the third gas guide hole (411) and the fourth gas guide hole (112) are the same.

7. The epitaxial furnace showerhead of claim 6, wherein, A first gas guide pipe (361) or a first gas blocking plug (37) is arranged in the first gas guide hole (351); one end of the first gas guide pipe (361) is in communication with the first gas flow cavity (341), and the other end of the first gas guide pipe (361) passes through the second gas guide hole (352), the third gas guide hole (411) and the fourth gas guide hole (112) at the corresponding positions and is in communication with the epitaxial furnace; the first gas blocking plug (37) is used for closing the corresponding first gas guide hole (351); A second gas guide pipe (362) or a second gas blocking plug is arranged in the second gas guide hole (352); one end of the second gas guide pipe (362) is in communication with the second gas flow cavity (342), and the other end of the second gas guide pipe (362) passes through the third gas guide hole (411) and the fourth gas guide hole (112) at the corresponding positions and is in communication with the epitaxial furnace; the second gas blocking plug is used for closing the corresponding second gas guide hole (352).

8. The epitaxial furnace showerhead of claim 7, wherein, The first gas guide pipe (361) is a hollow tubular structure, one end of the first gas guide pipe (361) towards the first gas flow cavity (341) is provided with a first end cover (3611), and a plurality of first air holes (3612) are arranged on the first end cover (3611); The structure of the second gas guide pipe (362) is the same as that of the first gas guide pipe (361), and the length of the second gas guide pipe (362) is less than that of the first gas guide pipe (361).

9. The epitaxial furnace spray apparatus of claim 5, wherein, Temperature probe pipes (5) are arranged on the upper cover (2), the first circular plate (311), the second circular plate (321), the third circular plate (41) and the bottom plate (11).

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